CN207047313U - Magnetic control sputtering device - Google Patents
Magnetic control sputtering device Download PDFInfo
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- CN207047313U CN207047313U CN201720618725.6U CN201720618725U CN207047313U CN 207047313 U CN207047313 U CN 207047313U CN 201720618725 U CN201720618725 U CN 201720618725U CN 207047313 U CN207047313 U CN 207047313U
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Abstract
The utility model discloses a kind of magnetic control sputtering device, including target location, substrate, electric field component and magnet.Substrate is parallel with target and required spacing is set relatively, and electric field component is used to produce electrostatic field of the direction of an electric field perpendicular to target；Magnet is hanging and is arranged on parallel to target between target and substrate, and magnet has the region being enclosed in target in it, has fixed magnetic field of the magnetic direction parallel to target in region, and the magnetic direction of fixed magnetic field is orthogonal with the direction of an electric field of electrostatic field.In sputter procedure, the region of magnet produces uniform magnetic field, does not produce extra energy consumption；In the presence of orthogonal magnetic field and electric field, atom is constantly ionized out in inert gas and is deposited on the surface of the substrate, avoid the different formation with etching groove of sputter rate of diverse location on target surface, so as to improve the utilization rate of target, the service life of target is extended, and ensure that the uniformity of film forming on substrate.
Description
Technical field
The utility model belongs to art of display device manufacture, and in particular to the magnetic control sputtering device for material surface plated film.
Background technology
Magnetron sputtering technique is very important technology in industrial plated film, due to its have the characteristics that at a high speed, low temperature, by
It is widely applied to many productions and scientific research field.Such as the neck such as electronics, optics, function of surface film and thin film phosphor
Domain.Particularly with magnetron sputtering technique prepare transparent conducting glass be widely used in flat-panel monitor, solar cell,
The fields such as OLED.
Magnetron sputtering refers to establish mutually orthogonal electric field and a magnetic field between substrate and target, and what is be charged therein is lazy
Property gas, such as argon gas ionizes out Ar ions and electronics under strong electric field, and Ar ions accelerate to pound target, sputter a large amount of
Target atom and secondary electron, target atom deposit to film forming in substrate, and electronics spins motion not under magnetic fields
Disconnectedly go out more Ar ions and electronics with argon gas ionization by collision, to ensure that film forming is constantly carried out.
But magnetron sputtering is due to the magnitude of field intensity and skewness problem of target material surface at present, meeting on target
Obvious etching groove is produced, significantly reduces the utilization rate and service life of target.
Utility model content
Therefore, technical problem to be solved in the utility model is that magnetic control sputtering device is in coating process in the prior art
In, magnitude of field intensity and skewness be present, the phase can produce obvious etching groove to target after use.
Therefore, the utility model provides a kind of magnetic control sputtering device, including
Target location, for placing target；
Substrate, parallel with the target and relatively required spacing are set；
Electric field component, for producing electrostatic field between the substrate and the target；
Magnet, vacantly and it is arranged on parallel to the target between the target and the substrate；The magnet has will
The target is enclosed in the region in it, has fixed magnetic field of the magnetic direction parallel to the target in the region, described
The magnetic direction of fixed magnetic field is orthogonal with the direction of an electric field of the electrostatic field.
Preferably, above-mentioned magnetic control sputtering device, the magnet include Part I, and parallel with the Part I set
The Part II put, the Part I only have polarity and polarity phase with the Part II in its opposed facing one end
Instead, the region for accommodating the target and is formed between the Part I and the Part II.
It is further preferred that above-mentioned magnetic control sputtering device, the Part I and the Part II are bar shaped magnetic
Iron；Yoke is provided with one end of the bar magnet, for being certainly by the polarity shielding at the bar magnet end, the other end
By holding.
Preferably, above-mentioned magnetic control sputtering device, the magnet are horsehoe magnet, and the U-shaped region of the horsehoe magnet will
The target surrounds.
Preferably, above-mentioned magnetic control sputtering device, in addition to pedestal, the target are fixed on the pedestal.
It is further preferred that above-mentioned magnetic control sputtering device, the periphery of the target is stretched out in the neighboring of the pedestal
Edge, the magnet are arranged on the space stretched out on the pedestal between the top surface of the target rim and the substrate
It is interior.
Preferably, above-mentioned magnetic control sputtering device, the electric field component include providing the first of positive voltage to the substrate
Power supply, and the second source to target offer negative voltage.
Preferably, above-mentioned magnetic control sputtering device, in addition to the inert gas being filled between the target and substrate.
Technical scheme provided by the utility model, has the following advantages that：
(1) magnetic control sputtering device provided by the utility model, including target location, substrate, electric field component and magnet.Its
In, substrate is parallel with the target on target location and required spacing is set relatively, electric field component be arranged on the target with it is described
In space between substrate, for producing electrostatic field of the direction of an electric field perpendicular to the target；Magnet is hanging and parallel to described
Target is arranged between the target and the substrate, and the magnet has the region being enclosed in the target in it, described
There is fixed magnetic field of the magnetic direction parallel to the target, the magnetic direction of the fixed magnetic field and the electrostatic field in region
Direction of an electric field it is orthogonal.
The magnetic control sputtering device of this structure, in sputter procedure, the region of magnet can produce uniform magnetic field, not produce volume
Outer energy consumption；Target is inserted in the region of magnet so that target is in uniform magnetic field, between uniform magnetic field and electrostatic field
It is orthogonal, required inert gas only need to be filled with into the space between substrate and target, in the presence of orthogonal magnetic field and electric field,
Atom is constantly ionized out in inert gas and is deposited on the surface of the substrate, uniform film plating layer is formed on substrate；Avoid
The different formation with etching groove of the sputter rate of diverse location, so as to improve the utilization rate of target, extend target on target surface
Service life, and ensure that the uniformity of film forming on substrate.
(2) magnetic control sputtering device provided by the utility model, the magnet include Part I, and with described first
The Part II point be arrangeding in parallel, the Part I and the Part II only have in its opposed facing one end polarity and
Opposite polarity, and the region for accommodating the target is formed between the Part I and the Part II.The magnetic control of this structure
Sputter equipment, magnet include Part I and Part II, because Part I and Part II only have opposed facing one end
With polarity, and the opposite polarity of the two, so as to form required uniform magnetic field between Part I and Part II.
(3) magnetic control sputtering device provided by the utility model, the Part I and the Part II are bar shaped magnetic
Iron；Yoke is provided with one end of the bar magnet, for being certainly by the polarity shielding at the bar magnet end, the other end
By holding.
The magnet of this structure, the polarity of one end of bar magnet is masked by yoke so that bar magnet is only one
Side wall polarized, the opposite polarity of two opposed facing one end of bar magnet, so as to realize between two bar magnets
Form uniform magnetic field.
(4) magnetic control sputtering device provided by the utility model, the magnet are horsehoe magnet.Utilize the natural of horsehoe magnet
Magnetic, uniform magnetic field is formed in the U-shaped region of magnet, target is enclosed in it by U-shaped region so that target is in parallel
Uniform magnetic field in.
(5) periphery of the target is stretched out in magnetic control sputtering device provided by the utility model, the neighboring of the pedestal
Edge, magnet, which is arranged on the pedestal, to be stretched out in the space between the top surface of the target rim and the substrate, is made
Obtain the uniform magnetic field that magnet areas is formed to cover the whole surface of target, improve coating speed of the device on substrate.
Brief description of the drawings
Fig. 1 is the structural representation of the magnetic control sputtering device provided in the utility model embodiment 1；
Fig. 2 is magnet and the after target, pedestal assembling in magnetic control sputtering device provided in the utility model embodiment 1
A kind of schematic top plan view of embodiment；
Fig. 3 is magnet and the after target, pedestal assembling in magnetic control sputtering device provided in the utility model embodiment 1
The schematic top plan view of two kinds of embodiments；
Reference：
1- substrates；
2- magnets；21- Part I；22- Part II；The parallel arms of 23- first；The parallel arms of 24- second；
3- targets；
4- pedestals；
5- electrostatic fields；
6- magnetic fields.
Embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with accompanying drawing, it is new based on this practicality
Embodiment in type, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belong to the scope of the utility model protection.
Embodiment 1
The present embodiment provides a kind of magnetic control sputtering device, and as depicted in figs. 1 and 2, magnetic control sputtering device includes substrate 1, magnetic
Body 2, target location, pedestal 4 and electric field component.
As shown in figure 1, substrate 1 is parallel with the target 3 being placed at target location and required spacing is set relatively；Electric field portion
Part is used to form electrostatic field 5 between substrate 1 and target 3.Magnet 2 is hanging and parallel to target and is arranged on target 3 and substrate 1
Between；Magnet 2 has the region being enclosed in target 3 in it, has fixation magnetic of the magnetic direction parallel to target in the region
Field 6, the magnetic direction of fixed magnetic field 6 is orthogonal with the direction of an electric field of electrostatic field 5.
As shown in Fig. 2 magnet 2 is preferably horsehoe magnet, two parallel arms of horsehoe magnet are respectively the first parallel arms 23
With the second parallel arms 24, the first parallel arms 23 and the second parallel arms 24 have a polarity, such as the He of the first parallel arms 23 respectively
The polarity of second parallel arms 24 is respectively N poles and S poles, and horsehoe magnet has natural magnetic, the shape between its two parallel arms
Into fixed uniform magnetic field 6.Because two parallel arms are located at the both sides of target respectively, then horsehoe magnet forms flat in its region
Row, so as to improve the homogeneity of the plasma density of target material surface, avoids target etching groove in the uniform magnetic field 6 of target
In the presence of substantially increasing the service life and utilization rate of target.
Electric field component includes the first power supply that positive voltage is provided to substrate 1, and the second electricity of negative voltage is provided to target 3
Source, the magnetic direction that generating positive and negative voltage forms the uniform magnetic field of a direction of an electric field and horsehoe magnet between substrate 1 and target 3 hang down
Straight electrostatic field.
As shown in figure 1, target 3 is fixed on pedestal 4, the neighboring of target 3 is stretched out in the neighboring of pedestal 4, ungulate
Magnet is arranged in the space between top surface and substrate 1 that the edge of target 3 is stretched out on pedestal 4, so as to which the entirety of target 3 be wrapped
It is trapped among in the U-shaped region of horsehoe magnet, target is placed in parallel uniform magnetic field 6.
Above-mentioned magnetic control sputtering device, when in use, space that need to be between substrate 1 and target 3 are filled with inert gas,
Such as argon gas.Due to argon gas be between orthogonal magnetic field and electric field, in the presence of highfield, argon gas ionize out Ar ions and
Electronics, Ar ions accelerate to pound target, sputter substantial amounts of target atom and secondary electron, target atom is reversely towards substrate
1 motion forms film so as to deposit on substrate 1；And electronics is in the presence of uniform magnetic field 6, spin motion constantly with Ar
Ionization by collision goes out more Ar ions and electronics, to ensure that film forming is constantly carried out on substrate.
Magnetic control sputtering device in this embodiment, the direction of target 3 is formed in parallel with using the region of horsehoe magnet
Uniform magnetic field 6, the uniform magnetic field 6 are formed without external power supply, do not produce additional energy；The U-shaped region of horsehoe magnet is by target
Material is enclosed in it so that target is orthogonal between the uniform magnetic field 6 and electrostatic field 5 in uniform magnetic field 6, orthogonal
Magnetic field and electric field in the presence of so that constantly uniformly plated on substrate needed for thickness film, so as to avoid on target surface not
Different with the sputter rate of position from the formation of etching groove, so as to improve the utilization rate of target, extend target uses the longevity
Life, and ensure that the uniformity of film forming on substrate.
As interchangeable embodiment, the edge of pedestal 4 can also keep aligned condition, ungulate magnetic with the edge of target
The region of iron is then located at the periphery of whole pedestal 4, and pedestal 4 and target 3 are all enclosed in its U-shaped region.As further
Deformation, can also be not provided with above-mentioned pedestal, need to only fix target 3 on target location in magnetron sputtering process, the target
Position can be arranged on pedestal, or on other work tops.
As interchangeable embodiment, magnet 2 is in addition to for horsehoe magnet, as shown in figure 3, magnet 2 can also include
Part I 21, and the Part II 22 being be arranged in parallel with Part I 21, Part I 21 is with Part II 22 only in its phase
The one end mutually faced has polarity and opposite polarity, and is formed between the Part I 21 and the Part II 22 and accommodate target
The region of material 3.
For example, Part I 21 and Part II 22 are bar magnet；Yoke is provided with one end of bar magnet, is used
Shielded in by the polarity at the end of bar magnet, the other end is free end, then a bar magnet only has one end to have polarity, false
Polarity such as a bar magnet is S poles, then another bar magnet is N poles, and two bar magnets have one end phase of polarity
Mutually face, then uniform magnetic field 6 is formed between Part I and Part II.At this time, it may be necessary to the length by two bar magnets
Size is more than the length dimension of target 3, it is ensured that the uniform magnetic field 6 that two bar magnets are formed covers whole target 3 so that target
Material 3 is in uniform magnetic field 6.
As deformation, according to the demand of the required intensity of magnetic field 6, uniform magnetic field 6 can be adjusted by setting magnet 2 more
Intensity.
As interchangeable embodiment, electric field component can also other structures in the prior art, only need to substrate 1 with
Generating positive and negative voltage is produced between target 3, forms electrostatic field 5 of the direction of an electric field perpendicular to the magnetic direction of magnet.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (8)
- A kind of 1. magnetic control sputtering device, it is characterised in that includingTarget location, for placing target (3)；Substrate (1), parallel with the target (3) and relatively required spacing are set；Electric field component, for producing electrostatic field (5) between the substrate (1) and the target (3)；Magnet (2), vacantly and it is arranged on parallel to the target (3) between the target (3) and the substrate (1)；The magnetic Body (2) has the region being enclosed in the target (3) in it, has magnetic direction parallel to the target in the region (3) fixed magnetic field (6), the magnetic direction of the fixed magnetic field (6) are orthogonal with the direction of an electric field of the electrostatic field (5).
- 2. magnetic control sputtering device according to claim 1, it is characterised in that：The magnet (2) includes Part I (21), And the Part II (22) being be arranged in parallel with the Part I (21), the Part I (21) and the Part II (22) Only there is polarity and opposite polarity in its opposed facing one end, and the Part I (21) and the Part II (22) it Between form the region for accommodating the target (3).
- 3. magnetic control sputtering device according to claim 2, it is characterised in that：The Part I (21) and described second It is bar magnet to divide (22)；Yoke is provided with one end of the bar magnet.
- 4. magnetic control sputtering device according to claim 1, it is characterised in that：The magnet (2) is horsehoe magnet, the hoof The U-shaped region of shape magnet surrounds the target (3).
- 5. according to the magnetic control sputtering device any one of claim 1-4, it is characterised in that：Also include pedestal (4), it is described Target (3) is fixed on the pedestal (4).
- 6. magnetic control sputtering device according to claim 5, it is characterised in that：Institute is stretched out in the neighboring of the pedestal (4) The neighboring of target (3) is stated, the magnet (2) is arranged on the top table that the target (3) edge is stretched out on the pedestal (4) In space between face and the substrate (1).
- 7. according to the magnetic control sputtering device any one of claim 1-4, it is characterised in that：The electric field component include to The substrate (1) provides the first power supply of positive voltage, and the second source of negative voltage is provided to the target (3).
- 8. according to the magnetic control sputtering device any one of claim 1-4, it is characterised in that：Also include being filled in the target Inert gas between material (3) and substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720618725.6U CN207047313U (en) | 2017-05-31 | 2017-05-31 | Magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720618725.6U CN207047313U (en) | 2017-05-31 | 2017-05-31 | Magnetic control sputtering device |
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| Publication Number | Publication Date |
|---|---|
| CN207047313U true CN207047313U (en) | 2018-02-27 |
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ID=61491926
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720618725.6U Active CN207047313U (en) | 2017-05-31 | 2017-05-31 | Magnetic control sputtering device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108396299A (en) * | 2018-06-06 | 2018-08-14 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
| CN112290905A (en) * | 2020-11-10 | 2021-01-29 | 四川大学 | Technology for frequency-up regulation of quartz resonator based on magnetron sputtering |
-
2017
- 2017-05-31 CN CN201720618725.6U patent/CN207047313U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108396299A (en) * | 2018-06-06 | 2018-08-14 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
| WO2019232981A1 (en) * | 2018-06-06 | 2019-12-12 | 北京铂阳顶荣光伏科技有限公司 | Magnetron sputtering plane cathode |
| CN112290905A (en) * | 2020-11-10 | 2021-01-29 | 四川大学 | Technology for frequency-up regulation of quartz resonator based on magnetron sputtering |
| CN112290905B (en) * | 2020-11-10 | 2024-03-22 | 四川大学 | Method for adjusting up-conversion of quartz resonator based on magnetron sputtering |
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