WO2019232981A1

WO2019232981A1 - Magnetron sputtering plane cathode

Info

Publication number: WO2019232981A1
Application number: PCT/CN2018/106779
Authority: WO
Inventors: 王正安
Original assignee: 北京铂阳顶荣光伏科技有限公司
Priority date: 2018-06-06
Filing date: 2018-09-20
Publication date: 2019-12-12
Also published as: CN108396299A

Abstract

A magnetron sputtering plane cathode, comprising: a target backplate (101), a target (102), a first insulating member (103), a second insulating member (104), a first magnet (105) and a second magnet (106); the target (102) is bonded onto an upper surface of the target backplate (101), and the first insulating member (103) and the second insulating member (104) are respectively laid on two ends of the target (102) and are attached and fitted on the upper surface of the target backplate (101); the first magnet (105) is provided above the first insulating member (103), the second magnet (106) is provided above the second insulating member (103), and the first magnet (105) and the second magnet (106) have opposite magnetic poles and are provided, in parallel, at two ends of the target (102). The magnetron sputtering plane cathode can not only improve the strength of the surface magnetic field of the target (102), but also improve the strength of the surface magnetic field horizontal component of the target (102) and the uniformity of the magnetic field distribution.

Description

Magnetron sputtering plane cathode

Cross-reference to related applications

This application is based on a Chinese patent application with an application number of 201810574229.4 and a filing date of June 06, 2018, and claims the priority of the Chinese patent application. The entire contents of this Chinese patent application are incorporated herein by reference.

Technical field

The invention relates to the technical field of semiconductor processes, and in particular to a magnetron sputtering planar cathode.

Background technique

Magnetron sputtering is a type of Physical Vapor Deposition (PVD). The general sputtering method can be used to prepare multiple materials such as metals, semiconductors, insulators, and has the advantages of simple equipment, easy control, large coating area, and strong adhesion.

In the existing magnetron sputtering planar cathode, the target is disposed above the target back plate, and a conductive copper block is disposed below the target back plate. The conductive copper block is provided with a magnet. During the magnetron sputtering process, the magnetic field is controlled by The magnet placed on the back of the target is generated, and the magnetic field passes through the conductive copper block and the target to reach the target surface through the magnetic field generated by the magnet.

The existing magnetron sputtering planar cathode has the following defects:

Defect 1: The surface of the target and the magnet are separated by the target and the conductive copper block, and the magnetic field intensity reaching the target surface is weak;

Defect 2: The magnet located at the center of the back of the target and the magnets at the edges of both sides constitute a certain magnetic circuit distribution due to the different polarities, but the magnetic field distribution formed by the magnetic circuit distribution on the target surface position is weak and the magnetic field distribution is weak. Uneven.

Summary of the Invention

Embodiments of the present invention provide a magnetron sputtering planar cathode to solve the above problems existing in the existing magnetron sputtering planar cathodes or at least partially solve the above problems.

In order to solve the above problems, an embodiment of the present invention discloses a magnetron sputtering planar cathode, including: a target back plate, a target, a first insulating member, a second insulating member, a first magnet, and a second magnet; The target is bound to the upper surface of the target back plate, and the first insulating member and the second insulating member are respectively laid on both ends of the target and are attached to the upper surface of the target back plate. The first magnet is disposed above the first insulator, the second magnet is disposed above the second insulator, and the first magnet is opposite to the second magnet and is disposed in parallel with each other; Said both ends of the target.

Preferably, the first insulation member and the second insulation member are both magnet and yoke insulation members; and the first insulation member and the second insulation member are each superimposed by a multilayer detachable polyvinyl fluoride sheet. composition.

Preferably, the magnetron sputtering planar cathode further includes: a conductive copper block, a cooling water sealing rubber ring, and a conductive cooling water sealing plate; a surface of the conductive copper block is processed with a cooling water circulation path, and a surface of the conductive copper block is provided with Anti-oxidation layer; the conductive copper block is disposed under the lower surface of the target back plate, the conductive cooling water sealing plate and the cooling water sealing rubber ring are sequentially disposed on the lower surface of the target back plate and A cooling water sealed space is formed between the conductive copper blocks.

Preferably, the conductive cooling water sealing plate is a brass plate.

Preferably, the magnetron sputtering planar cathode further includes: a carbon fiber layer; the carbon fiber layer is disposed between the lower surface of the target back plate and the conductive cooling water sealing plate.

Preferably, the magnetron sputtering planar cathode further includes: an anode cover; the anode cover covers the first magnet and the second magnet.

Preferably, the magnetron sputtering planar cathode further includes: a yoke, a main insulator, a back plate insulator, and a cathode back plate; the yoke is disposed below the conductive copper block, and supports the conductive copper block, The anode cover, the first magnet, and the second magnet, the yoke provides a path for a magnetic field formed by the first magnet and the second magnet; the main body insulator is provided on the yoke And the conductive copper block, the yoke and the conductive copper block are insulated; the cathode back plate is disposed below the yoke, and the back plate insulator is disposed between the yoke and the cathode Between the back plates, the yoke and the cathode back plate are insulated.

Preferably, the cathode back plate is an aluminum alloy back plate.

Preferably, the target is bound to the upper surface of the target back plate by indium metal.

In the magnetron sputtering planar cathode provided by the embodiment of the present invention, a first magnet and a second magnet having opposite poles are disposed on an upper surface of a target back plate, and are disposed at both ends of the target in parallel, during a magnetron sputtering process. In the example, the two magnets form an approximately horizontal magnetic field on the surface of the target. Since the magnetic field generated by the magnet disposed on the side of the target directly acts on the surface of the target, the intensity of the magnetic field on the surface of the target can be increased. In addition, since the two magnets form a uniform magnetic field distribution on the target surface that is approximately parallel to the target surface, the strength of the horizontal component of the magnetic field surface on the target and the uniformity of the magnetic field distribution can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

1 is a schematic structural diagram of a magnetron sputtering planar cathode according to a first embodiment of the present invention;

2 is a schematic diagram of a magnetic field formed by a first magnet and a second magnet;

3 is a schematic structural diagram of a magnetron sputtering planar cathode according to a second embodiment of the present invention;

FIG. 4 is a schematic structural diagram of an insulating member.

Detailed ways

In order to make the foregoing objects, features, and advantages of the present invention more comprehensible, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

Example one

A magnetron sputtering planar cathode is provided in the embodiment of the present invention. As shown in the schematic structural diagram of the magnetron sputtering planar cathode shown in FIG. 1, the magnetron sputtering planar cathode of the embodiment of the present invention includes: a target back The plate 101, the target 102, the first insulating member 103, the second insulating member 104, the first magnet 105, and the second magnet 106.

The target 102 is bound to the upper surface of the target back plate 101, and the first insulating member 103 and the second insulating member 104 are respectively laid on both ends of the target 102 and are attached to the upper surface of the target back plate 101; The magnet 105 is disposed above the first insulating member 103, and the second magnet 106 is disposed above the second insulating member 104. The first magnet 105 and the second magnet 106 have opposite magnetic poles and are disposed at both ends of the target 102 in parallel. The first magnet 105 and the second magnet 106 can be the same size or different sizes. The specific size of the two can be adjusted according to the specific size of the target 102 and the target back plate 101. Correspondingly, the first insulator 103 The size of the first magnet 105 can be flexibly adjusted according to the size of the first magnet 105, and the size of the second insulating member 104 can be flexibly adjusted according to the size of the first magnet 106.

Specifically, as shown in FIG. 1, the S pole of the first magnet 105 is close to the target 102 and the N pole of the second magnet 106 is close to the target 102. In the specific implementation process, it is not limited to the setting shown in FIG. 1, and the N pole of the first magnet 105 can be close to the target 102, and the S pole of the second magnet 106 can be close to the target 102. The magnetic field path formed by the two magnets can still be guaranteed.

During the magnetron sputtering process, a schematic diagram of the magnetic field formed by the first magnet 105 and the second magnet 106 is shown in FIG. 2, and the two magnets form an approximately horizontal magnetic field on the surface of the target 102. The two poles of the two magnets are directly placed on both sides of the target 102, and a magnetic field distribution approximately parallel to the surface of the target 102 is formed in the surface area of the target 102. The magnetic field directly acts on the surface of the target 102, which can increase the intensity of the magnetic field on the surface of the target 102 . In addition, since the two magnets form a uniform magnetic field distribution on the surface of the target 102 approximately parallel to the surface of the target 102, the strength of the horizontal component of the magnetic field on the surface of the target 102 and the uniformity of the magnetic field distribution can be improved. Furthermore, since the two magnets form a uniform magnetic field distribution on the surface area of the target material 102 parallel to the surface of the target material 102, a large area of the surface of the target material 102 can be etched, which effectively eliminates most of the non-linearities that occur in the traditional magnetic field configuration. The problem of the etched area greatly improves the utilization rate of the target 102.

In the specific implementation process, the thickness of the first insulating member 103 and the second insulating member 104 can be set to a structure that can be flexibly adjusted. During the use of the magnetron sputtering plane cathode, the target 102 will become thinner during the sputtering process. In order to ensure that the surfaces of the first magnet 105 and the second magnet 106 and the surface of the target 102 are on the same plane, the thickness of the first insulating member 103 and the second insulating member 104 can be adjusted. Therefore, the thicknesses of the first insulating member 103 and the second insulating member 104 can be set to a structure that can be flexibly adjusted, which is convenient for flexible adjustment and control.

In the embodiment of the present invention, the structure of the magnetic circuit system in the magnetron sputtering planar cathode and the positional relationship between the magnetic circuit system and the target are specifically described. In the specific implementation process, the magnetron sputtering planar cathode can also be It includes other systems such as a power supply access system, an insulation support system, and a cooling system. For specific structures of other systems, reference may be made to existing related descriptions, which are not specifically limited in the embodiments of the present invention.

Example two

An embodiment of the present invention provides a magnetron sputtering planar cathode, as shown in a schematic structural diagram of the magnetron sputtering planar cathode shown in FIG. 3.

The magnetron sputtering planar cathode according to the embodiment of the present invention includes a target back plate 301, a target 302, a first insulating member 303, a second insulating member 304, a first magnet 305, and a second magnet 306.

The target 302 is bound to the upper surface of the target back plate 301, and the first insulating member 303 and the second insulating member 304 are respectively laid on both ends of the target 302 and are attached to the upper surface of the target back plate 301; The magnet 305 is disposed above the first insulating member 303, and the second magnet 306 is disposed above the second insulating member 304. The first magnet 305 and the second magnet 306 have opposite magnetic poles and are placed parallel to both ends of the target 302. The first magnet 305 and the second magnet 306 constitute a magnetic circuit system of a magnetron sputtering planar cathode. The magnetic field formed by the two magnets during the magnetron sputtering process is shown in FIG. 2.

The target 302 can be bound to the target back plate 301 by any conductive material, such as copper, iron, silver, or gold. Preferably, the target 302 can be bound to the target back plate by indium metal. On the upper surface, indium metal is used to bind the target and the target back plate, which can improve the conductivity between the two. Both the first insulating member 303 and the second insulating member 304 can be provided as magnets and yoke insulators; the magnet and yoke insulators have good insulation properties, and the first insulating member 303 has the properties of insulating the first magnet 305 and the target 302. The second insulating member 304 has a function of insulating the second magnet 306 and the target 302. Both the first insulating member 303 and the second insulating member 304 are composed of a plurality of layers of detachable polyvinyl fluoride sheets. The structures of the two insulating members are the same, and their specific structures are shown in FIG. 4. The individual thickness of the polyvinyl fluoride sheet included in the insulation can be set by those skilled in the art according to actual needs. For example, the thickness of a single polyvinyl fluoride sheet is set to 0.5 mm. The number of polyvinyl fluoride sheets can be based on the actual target material. The thickness adjustment is determined. The two insulators are arranged in a layered structure of a multilayer detachable polyvinyl fluoride sheet, and the relative positions of the first magnet 305, the second magnet 306, and the target 302 can be adjusted by increasing or decreasing the number of polyvinyl fluoride sheets. In order to achieve the purpose that the surfaces of the two magnets and the surface of the target 302 are approximately horizontal, thereby ensuring that the magnetic field formed by the two magnets on the surface of the target and the target 302 are approximately horizontal.

As shown in FIG. 3, the magnetron sputtering planar cathode according to the embodiment of the present invention further includes: a conductive copper block 307, a cooling water seal ring 308, and a conductive cooling water sealing plate 309; a surface of the conductive copper block 307 is provided with a cooling water circulation path 310 The surface of the conductive copper block 307 is provided with an anti-oxidation layer. A conductive copper block 307 is disposed under the lower surface of the target back plate 301, and a conductive cooling water seal plate 309 and a cooling water seal ring 308 are sequentially disposed between the lower surface of the target back plate 301 and the conductive copper block 307 to form cooling water. Seal the space. The cooling water circulation path 310 and the conductive cooling water sealing plate 309 constitute a cooling system of the magnetron sputtering plane cathode. The cooling water circulates in the cooling water circulation path 310 and absorbs the heat generated during the magnetron sputtering process to achieve a cooling effect.

Preferably, the conductive copper block 307 is a copper copper block, and the copper copper has good electrical conductivity. A cooling water circulation path 310 is processed on the surface of the conductive copper block 307. The specific shape and arrangement of the cooling water circulation path 310 can be flexibly set by those skilled in the art according to actual needs. For example: cooling water circulation paths are set up around the conductive copper block, and for example: cooling water circulation paths are evenly arranged on the entire surface of the conductive copper block. An anti-oxidation layer is provided on the surface of the conductive copper block, which can prevent the oxidation of the conductive copper block itself and the corrosion of the water channel by the cooling water, thereby prolonging the service life of the power-off copper block.

Preferably, the conductive cooling water sealing plate 309 is a brass plate, and the brass plate has high hardness and good oxidation resistance. The thickness of the conductive cooling water sealing plate 309 can be set by those skilled in the art according to actual needs, for example, it is set to 1 mm.

Preferably, the magnetron sputtering planar cathode may further include a carbon fiber layer. The carbon fiber layer is not shown in FIG. 3. The carbon fiber layer is disposed between the lower surface of the target back plate 301 and the conductive cooling water sealing plate 309. In order to improve the conductivity of the target back plate 301 and the conductive cooling water sealing plate 309. In the specific implementation process, the specific thickness of the carbon fiber layer can be set by those skilled in the art according to actual needs, for example: set to 0.15mm, 0.3mm, or 0.25mm, etc., preferably, the thickness of the carbon fiber layer ranges from 0.2 to 0.5mm. between.

The conductive copper block 307, the conductive cooling water sealing plate 309, the target back plate 301, and the target 302 constitute a power access system of a magnetron sputtering plane cathode. During the operation of the magnetron sputtering planar cathode, the power output by the magnetron sputtering power supply is directly connected to the conductive copper block 307 through a cable, and is finally loaded on the target 302 through the conductive cooling water sealing plate 309 and the target back plate 301. Therefore, the carbon fiber layer added between the conductive cooling water sealing plate 309 and the target back plate 301, and the target 302 is bound to the target back plate 301 through indium metal, all improve the conductivity of the magnetron sputtering plane cathode Sex.

As shown in FIG. 3, the magnetron sputtering planar cathode in the embodiment of the present invention may further include: an anode cover 311; the anode cover 311 covers the first magnet 305 and the second magnet 306. The anode cover is made of anti-oxidation material, such as aluminum alloy.

The magnetron sputtering planar cathode further includes: a yoke 312, a main body insulator 313, a back plate insulator 314, and a cathode back plate 315, a yoke 312, a main body insulator 313, a back plate insulator 314, a cathode back plate 315, a first An insulation member 303 and a second insulation member 304 constitute an insulation support system for a magnetron sputtering planar cathode.

The yoke 312 is disposed below the conductive copper block 307 and supports the conductive copper block 307, the anode cover 311, the first magnet 305, and the second magnet 306. The yoke 312 provides a path for the magnetic field formed by the first magnet 305 and the second magnet 306. The main body insulator 313 is disposed between the yoke 312 and the conductive copper block 307, and the insulating yoke 312 and the conductive copper block 307. The cathode back plate 315 is disposed below the yoke 312, the back plate insulator 314 is disposed between the yoke 312 and the cathode back plate 315, and the insulating yoke 312 and the cathode back plate 315 are disposed. The conductive cooling water sealing plate 309 and the main body insulator 313 are sealed by a first vacuum sealing rubber ring 317.

Preferably, the cathode back plate 315 is an aluminum alloy back plate, and the aluminum alloy back plate has good oxidation resistance and high hardness.

In the specific application process of the magnetron sputtering planar cathode provided by the embodiment of the present invention, the magnetron sputtering planar cathode can be disposed in the vacuum chamber 316 of the magnetron sputtering equipment, and a vacuum seal ring 318 is provided between the vacuum chamber 316 and the cathode back plate 315. To ensure the seal between the vacuum chamber 316 and the cathode back plate 315.

In the magnetron sputtering planar cathode provided by the embodiment of the present invention, a first magnet and a second magnet having opposite poles are disposed on an upper surface of a target back plate, and are disposed at both ends of the target in parallel, during a magnetron sputtering process. In the example, the two magnets form an approximately horizontal magnetic field on the surface of the target. Since the magnetic field generated by the magnet disposed on the side of the target directly acts on the surface of the target, the intensity of the magnetic field on the surface of the target can be increased. In addition, since the two magnets form a uniform magnetic field distribution on the target surface that is approximately parallel to the target surface, the strength of the horizontal component of the magnetic field surface on the target and the uniformity of the magnetic field distribution can be improved. In addition, in the embodiment of the present invention, the first insulating member and the second insulating member are arranged as a multilayer and detachable layer of polyvinyl fluoride, and the relative position between the magnet and the target is adjusted by changing the number of the polyvinyl fluoride sheets. Eliminating changes in the magnetic field on the target surface caused by target etching can ensure the consistency of the magnetic field throughout the sputtering process and improve process stability.

Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments may refer to each other.

Although the preferred embodiments of the present invention have been described, those skilled in the art can make other changes and modifications to these embodiments once they know the basic inventive concepts. Therefore, the appended claims are intended to be construed to include the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the invention.

Finally, it should be noted that in this article, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these entities. There is any such actual relationship or order between OR operations. Moreover, the terms "including", "comprising", or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or terminal device that includes a series of elements includes not only those elements but also those that are not explicitly listed Other elements, or elements inherent to such a process, method, article, or terminal. Without more restrictions, the elements defined by the sentence "including a ..." do not exclude the existence of other identical elements in the process, method, article, or terminal device including the elements.

The magnetron sputtering planar cathode provided by the present invention has been described in detail above. The specific examples are used herein to explain the principles and embodiments of the present invention. The description of the above embodiments is only to help understand the present invention. Method and its core ideas; meanwhile, for a person of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation and application scope. In summary, the content of this specification should not be understood as Limitations on the invention.

Claims

A magnetron sputtering planar cathode, comprising: a target back plate, a target, a first insulating member, a second insulating member, a first magnet, and a second magnet;

The target is bound to the upper surface of the target back plate, and the first insulating member and the second insulating member are respectively laid on both ends of the target and on the target back plate. Surface fit

The first magnet is disposed above the first insulator, the second magnet is disposed above the second insulator, and the first magnet is opposite to the second magnet and is placed in parallel with the target Wood ends.
The magnetron sputtering planar cathode according to claim 1, wherein the first insulator and the second insulator are both magnets and yoke insulators;

Both the first insulating member and the second insulating member are composed of a plurality of detachable layers of polyvinyl fluoride.
The magnetron sputtering planar cathode according to claim 1, wherein the magnetron sputtering planar cathode further comprises: a conductive copper block, a cooling water sealing rubber ring, and a conductive cooling water sealing plate;

A cooling water circulation path is processed on the surface of the conductive copper block, and an anti-oxidation layer is provided on the surface of the conductive copper block;

The conductive copper block is disposed under the lower surface of the target back plate, and the conductive cooling water sealing plate and the cooling water seal rubber ring are sequentially disposed on the lower surface of the target back plate and the conductive copper. Cooling water sealed spaces are formed between the blocks.
The magnetron sputtering planar cathode according to claim 3, wherein the conductive cooling water sealing plate is a brass plate.
The magnetron sputtering planar cathode according to claim 3, wherein the magnetron sputtering planar cathode further comprises: a carbon fiber layer;

The carbon fiber layer is disposed between a lower surface of the target back plate and the conductive cooling water sealing plate.
The magnetron sputtering planar cathode according to claim 3, wherein the magnetron sputtering planar cathode further comprises: an anode cover;

The anode cover covers the first magnet and the second magnet.
The magnetron sputtering planar cathode according to claim 6, wherein the magnetron sputtering planar cathode further comprises: a yoke, a main insulator, a back plate insulator, and a cathode back plate;

The yoke is disposed below the conductive copper block, and supports the conductive copper block, the anode cover, the first magnet, and the second magnet. The yoke is the first magnet and the A magnetic field provided by the second magnet provides a path;

The main body insulator is disposed between the yoke and the conductive copper block, and insulates the yoke and the conductive copper block;

The cathode back plate is disposed below the yoke, and the back plate insulator is disposed between the yoke and the cathode back plate, and insulates the yoke and the cathode back plate.
The magnetron sputtering planar cathode according to claim 7, wherein the cathode back plate is an aluminum alloy back plate.
The magnetron sputtering planar cathode according to claim 1, wherein the target is bound to an upper surface of the target back plate by indium metal.