CN108396299A - A kind of magnetron sputtering planar cathode - Google Patents
A kind of magnetron sputtering planar cathode Download PDFInfo
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- CN108396299A CN108396299A CN201810574229.4A CN201810574229A CN108396299A CN 108396299 A CN108396299 A CN 108396299A CN 201810574229 A CN201810574229 A CN 201810574229A CN 108396299 A CN108396299 A CN 108396299A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 43
- 229910052802 copper Inorganic materials 0.000 claims description 43
- 239000010949 copper Substances 0.000 claims description 43
- 239000000498 cooling water Substances 0.000 claims description 34
- 238000007789 sealing Methods 0.000 claims description 26
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 11
- 239000004917 carbon fiber Substances 0.000 claims description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000003064 anti-oxidating effect Effects 0.000 claims description 4
- 239000013077 target material Substances 0.000 abstract description 35
- 238000000034 method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 230000000750 progressive effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An embodiment of the present invention provides a kind of magnetron sputtering planar cathodes, including：Target backboard, target, the first insulating part, the second insulating part, the first magnet and the second magnet；The target is bundled on the upper surface of the target backboard, and first insulating part is laid on the target both ends with second insulating part and is bonded with the upper surface of the target backboard respectively；First magnet is arranged above first insulating part, and second magnet is arranged above second insulating part, and first magnet is opposite with second magnet poles and parallel is placed in the target both ends.Magnetron sputtering planar cathode provided in an embodiment of the present invention, can not only promote the intensity in target material surface magnetic field, additionally it is possible to promote the intensity and the Distribution of Magnetic Field uniformity of target material surface magnetic field levels component.
Description
Technical field
The present invention relates to semiconductor process technique fields, more particularly to a kind of magnetron sputtering planar cathode.
Background technology
Magnetron sputtering is one kind of physical vapour deposition (PVD) (Physical Vapor Deposition, PVD).It is general to splash
The method of penetrating can be used for preparing more materials such as metal, semiconductor, insulator, and with equipment is simple, easily controllable, plated film area is big
And the advantages that strong adhesive force.
In existing magnetron sputtering planar cathode, target is arranged above target backboard, is provided with and leads below target backboard
Electrolytic copper block, conductive copper billet, which issues, is provided with magnet, and magnetic field is generated by the magnet for being placed in target back in magnetron sputtering process, magnetic
The magnetic field that field is generated by magnet reaches target material surface through conductive copper billet and target itself.
Existing magnetron sputtering planar cathode defect specific as follows：
Defect one：It is isolated by target and conductive copper billet between target material surface and magnet, reaches the magnetic field intensity of target material surface
It is weaker；
Defect two：Positioned at the magnet of target center back position and the magnet of both sides of the edge position because of polarity differently composed one
Fixed magnetic circuit distribution, but this kind of magnetic circuit be distributed in the formation of target material surface position magnetic field levels component is weaker and Distribution of Magnetic Field not
Uniformly.
Invention content
The embodiment of the present invention provides a kind of magnetron sputtering planar cathode, exists to solve existing magnetron sputtering planar cathode
The above problem or solve the above problems at least partly.
To solve the above-mentioned problems, the embodiment of the invention discloses a kind of magnetron sputtering planar cathodes, including：Target is carried on the back
Plate, target, the first insulating part, the second insulating part, the first magnet and the second magnet；The target is bundled in the target backboard
Upper surface on, first insulating part and second insulating part are laid on the target both ends and are carried on the back with the target respectively
The upper surface of plate is bonded；First magnet is arranged above first insulating part, and the second magnet setting is described the
Above two insulating parts, first magnet is opposite with second magnet poles and parallel is placed in the target both ends.
Preferably, first insulating part and second insulating part are magnet, yoke insulating part；First insulation
Part is superimposed by the dismountable polyvinyl fluoride thin plate of multilayer with second insulating part and is formed.
Preferably, the magnetron sputtering planar cathode further includes：Conductive copper billet, cooling water sealing rubber ring and conductive cooling
Watertight sealing plate；The conduction copper block surface is machined with cooling water circulation passageway, and the conduction copper block surface is provided with anti oxidation layer；
The conduction copper billet is set under the lower surface of the target backboard, the conduction cooling water sealing plate and the cooling water-stop
Cushion rubber is set in turn between the lower surface of the target backboard and the conductive copper billet and forms cooling water sealing space.
Preferably, the conductive cooling water sealing plate is brass sheet.
Preferably, the magnetron sputtering planar cathode further includes：Carbon fiber layer；The carbon fiber layer is set to the target
Between backboard lower surface and the conductive cooling water sealing plate.
Preferably, the magnetron sputtering planar cathode further includes：Anode cap；The anode cap is covered in first magnet
With second magnet top.
Preferably, the magnetron sputtering planar cathode further includes：Yoke, main body insulating part, backboard insulating part and cathode
Backboard；The yoke setting supports the conductive copper billet, the anode cap, first magnet below the conductive copper billet
And second magnet, the yoke provide access for the magnetic field that first magnet and second magnet are formed；It is described
The setting of main body insulating part is between the yoke and the conductive copper billet, and insulate the yoke and the conductive copper billet；Described the moon
Pole backboard is arranged below the yoke, and the backboard insulating part is arranged between the yoke and the cathode backplates, insulation
The yoke and the cathode backplates.
Preferably, the cathode backplates are aluminum alloy back plate.
Preferably, the target is bundled in by indium metal on the upper surface of the target backboard.
Magnetron sputtering planar cathode provided in an embodiment of the present invention exists the first extremely opposite magnet and the setting of the second magnet
On the upper surface of target backboard, and it is parallel be placed in target both ends, in magnetron sputtering process, two magnet are formed closely in target material surface
Like horizontal magnetic field, due to magnet be set to produced by target side at magnetic field directly act on target material surface, can be promoted
The intensity in target material surface magnetic field.Further, since two magnet form the uniform magnetic field for being approximately parallel to target material surface in target material surface
Distribution, therefore the intensity and the Distribution of Magnetic Field uniformity of target material surface magnetic field levels component can be promoted.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of according to embodiments of the present invention one magnetron sputtering planar cathode；
Fig. 2 is that the first magnet and the second magnet are formed by magnetic field schematic diagram；
Fig. 3 is a kind of structural schematic diagram of according to embodiments of the present invention two magnetron sputtering planar cathode；
Fig. 4 is the structural schematic diagram of insulating part.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
A kind of magnetron sputtering planar cathode, magnetron sputtering planar cathode as shown in Figure 1 are provided in the embodiment of the present invention
Structural schematic diagram shown in, the magnetron sputtering planar cathode of the embodiment of the present invention includes：Target backboard 101, target 102, first
Insulating part 103, the second insulating part 104, the first magnet 105 and the second magnet 106.
Target 102 is bundled on the upper surface of target backboard 101, and the first insulating part 103 is spread respectively with the second insulating part 104
It is located at 102 both ends of target and is bonded with the upper surface of target backboard 101；First magnet 105 is arranged on the first insulating part 103
Side, the second magnet 106 are arranged above the second insulating part 104, and the first magnet 105 and 106 magnetic pole of the second magnet are opposite and parallel
It is placed in target both ends.First magnet 105 and the second magnet 106, which can wait, can not also wait greatly greatly, and the specific size of the two can be tied
The specific size flexibility adjustment setting of target 102, target backboard 101 is closed, correspondingly, the size of the first insulating part 103 then may be used
Setting is adjusted flexibly in size according to the first magnet 105, and the size of the second insulating part 104 then can be according to the ruler of the first magnet 106
It is very little that setting is adjusted flexibly.
Specifically, as shown in Figure 1, the S of the first magnet 105 is extremely close to target 102, the N of the second magnet 106 is extremely close to target
102.It is not limited to this kind of setting shown in Fig. 1 during specific implementation, the poles N of the first magnet 105 can also be leaned on
The S of near target material 102, the second magnet 106 is extremely arranged close to 102 this kind of target, can still ensure that the magnetic field that two magnet are formed is logical
Road.
In magnetron sputtering process, the first magnet 105, the second magnet 106 be formed by magnetic field schematic diagram as shown in Fig. 2,
Two magnet form the magnetic field of level of approximation on 102 surface of target.The two poles of the earth of two magnet are directly parallel to be placed in 102 both sides of target,
102 surface region of target forms the Distribution of Magnetic Field for being approximately parallel to 102 surface of target, and magnetic field directly acts on target material surface, energy
Enough promote the intensity in target material surface magnetic field.Further, since two magnet are approximately parallel to the equal of target material surface in target material surface formation
Even Distribution of Magnetic Field, therefore the intensity and the Distribution of Magnetic Field uniformity of target material surface magnetic field levels component can be promoted.Further
Ground, can be real since two magnet are approximately parallel to the uniform magnetic field distribution on 102 surface of target in the formation of 102 surface region of target
The large area etching of existing target material surface, the problem of effectively eliminating the most non-etch areas occurred when classical magnetic field configuration,
Greatly improve target utilization.
During specific implementation, the thickness of the first insulating part 103, the second insulating part 104 can be arranged to flexibly to adjust
The structure of section, target 102 can be thinning in sputtering process during magnetron sputtering planar cathode use, in order to ensure the first magnetic
Iron 105,106 surface of the second magnet and target material surface are in same plane, can insulate by adjusting the first insulating part 103, second
The thickness of part 104 is realized.Therefore can be arranged to the thickness of the first insulating part 103, the second insulating part 104 can flexible modulation
Structure controls convenient for flexible modulation.
In the embodiment of the present invention between the structure of the magnetic circuit system in magnetron sputtering planar cathode, magnetic circuit system and target
Position relationship illustrated, during specific implementation, magnetron sputtering planar cathode can also include other systems
Such as plant-grid connection system, insulating supporting system and cooling system refer to existing correlation for the concrete structure of other systems
Explanation is not particularly limited this in the embodiment of the present invention.
Magnetron sputtering planar cathode provided in an embodiment of the present invention exists the first extremely opposite magnet and the setting of the second magnet
On the upper surface of target backboard, and it is parallel be placed in target both ends, in magnetron sputtering process, two magnet are formed closely in target material surface
Like horizontal magnetic field, due to magnet be set to produced by target side at magnetic field directly act on target material surface, can be promoted
The intensity in target material surface magnetic field.Further, since two magnet form the uniform magnetic field for being approximately parallel to target material surface in target material surface
Distribution, therefore the intensity and the Distribution of Magnetic Field uniformity of target material surface magnetic field levels component can be promoted.
Embodiment two
A kind of magnetron sputtering planar cathode, magnetron sputtering planar cathode as shown in Figure 3 are provided in the embodiment of the present invention
Structural schematic diagram shown in.
The magnetron sputtering planar cathode of the embodiment of the present invention includes：Target backboard 301, target 302, the first insulating part 303,
Second insulating part 304, the first magnet 305 and the second magnet 306.
Target 302 is bundled on the upper surface of target backboard 301, and the first insulating part 303 is spread respectively with the second insulating part 304
It is located at 302 both ends of target and is bonded with the upper surface of target backboard 301；First magnet 305 is arranged on the first insulating part 303
Side, the second magnet 306 are arranged above the second insulating part 304, and the first magnet 305 and 306 magnetic pole of the second magnet are opposite and parallel
It is placed in target both ends.First magnet 305 and the second magnet 306 constitute the magnetic circuit system of magnetron sputtering planar cathode, for two
Magnetic field of the magnet formed in magnetron sputtering process is as shown in Figure 2.
Target can be bundled in by arbitrary conductive material on target backboard, such as：Copper, iron, silver or gold etc.,
Preferably, target can be bundled on the upper surface of target backboard by indium metal, and target and target backboard are bound using indium metal,
Electric conductivity between the two can be promoted.First insulating part 303 and the second insulating part 304 may be configured as magnet, yoke insulation
Part；There is good insulating properties, the first insulating part 303 to have the first magnet of insulation 305 and target 302 for magnet, yoke insulating part
Effect, the second insulating part 304 has the function of the second magnet 306 of insulation and target 302.First insulating part 303 and second is exhausted
Edge part 304 is made of the dismountable polyvinyl fluoride thin plate superposition of multilayer, and the structure of two insulating parts is identical, and concrete structure is such as
Shown in Fig. 4.The single thickness for the polyvinyl fluoride thin plate for being included for insulating part can be by those skilled in the art according to practical need
It asks to be configured and for example sets single polyvinyl fluoride gauge of sheet to 0.5mm, it can root for the quantity of polyvinyl fluoride thin plate
It adjusts and determines according to the actual (real) thickness of target.Two insulating parts are arranged to the knot of the dismountable polyvinyl fluoride thin plate superposition of multilayer
Structure can adjust the first magnet, the second magnet and the opposite position of target by increasing or decreasing for polyvinyl fluoride thin plate quantity
It sets, to achieve the purpose that two magnet surfaces and target material surface level of approximation, so that it is guaranteed that the magnetic that two magnet are formed in target material surface
Field and target level of approximation.
As shown in figure 3, the magnetron sputtering planar cathode of the embodiment of the present invention further includes：Conductive copper billet 307, cooling water-stop
Cushion rubber 308 and conductive cooling water sealing plate 309；307 surface of conductive copper billet is machined with cooling water circulation passageway 310, conductive copper
307 surface of block is provided with anti oxidation layer.Conductive copper billet 307 is set under the lower surface of target backboard 301, the cooling water-stop of conduction
Plate 309 and cooling water sealing rubber ring 308 be set in turn between the lower surface of target backboard 301 and conductive copper billet 307 form it is cold
But water-stop space.Cooling water circulation passageway 310 constitutes the cooling of magnetron sputtering planar cathode with conductive cooling water sealing plate 309
System, cooling water circulate in cooling water circulation passageway 310, and generated heat plays cold in absorption magnetron sputtering process
But effect.
Preferably, conductive copper billet 307 is red copper block, and red copper has good electric conductivity.307 surface of conductive copper billet is machined with
Cooling water circulation passageway 310, the concrete shape for cooling water circulation passageway 310 and arrangement, can be by those skilled in the art's root
It is flexibly configured according to actual demand.Such as：Cooling water circulation passageway is set along conductive copper billet surrounding, then for example：In conductive copper
Block entire surface is uniformly arranged cooling water circulation passageway etc..Conductive copper block surface, which is provided with anti oxidation layer, can prevent conductive copper billet
Corrosion of the oxidation and cooling water of itself to water route, to extend the service life of power down copper billet.
Preferably, conductive cooling water sealing plate is brass sheet, and brass sheet hardness is high and has good inoxidizability.It is conductive
The thickness of cooling water sealing plate can be configured by those skilled in the art according to actual demand, such as be set as 1mm.
Preferably, magnetron sputtering planar cathode can also include：Carbon fiber layer, carbon fiber layer are not shown in figure 3, carbon fiber
Dimension layer is set between 301 lower surface of target backboard and conductive cooling water sealing plate 309, and carbon fiber layer is for improving target backboard
With the electric conductivity of conductive cooling water sealing plate.During specific implementation, the specific thickness of carbon fiber layer can be by art technology
Personnel are configured according to actual demand, such as：It is set as 0.15mm, 0.3mm or 0.25mm etc., it is preferable that carbon fiber layer
Thickness range is 0.2 between 0.5mm.
It is flat that conductive copper billet 307, conductive cooling water sealing plate 309, target backboard 301 and target 302 constitute magnetron sputtering
The plant-grid connection system of face cathode.In the magnetron sputtering planar cathode course of work, the power of magnetron sputtering power supply output passes through
Cable is connected directly between on conductive copper billet 307, and finally load exists by conductive cooling water sealing plate 309 and target backboard 301
On target 302, therefore the carbon fiber layer being added between conductive cooling water sealing plate 309 and target backboard 301, by target 302
It is the electric conductivity for improving magnetron sputtering planar cathode to be bundled on target backboard 301 by indium metal.
As shown in figure 3, the magnetron sputtering planar cathode in the embodiment of the present invention can also include：Anode cap 311；Anode cap
311 are covered in 306 top of the first magnet 305 and the second magnet.Anode cap is prepared by anti-oxidant material, such as aluminium alloy material
Matter.
Magnetron sputtering planar cathode further includes：Yoke 312, main body insulating part 313, backboard insulating part 314 and the cathode back of the body
Plate 315, yoke 312, main body insulating part 313, backboard insulating part 314, cathode backplates 315, the insulation of the first insulating part 303, second
Part 304 constitutes the insulating supporting system of magnetron sputtering planar cathode.
Yoke 312 is arranged below conductive copper billet 307, support conductive copper billet 307, anode cap 311, the first magnet 305 with
And second magnet 306, yoke 312 provide access for the magnetic field that the first magnet 305 and the second magnet 306 are formed.Main body insulating part
313 settings are between yoke 312 and conductive copper billet 307, insulation yoke 312 and conductive copper billet 307.The setting of cathode backplates 315 exists
312 lower section of yoke, backboard insulating part 314 are arranged between yoke 312 and cathode backplates 315, and insulate yoke 312 and cathode backplates
315.It is sealed by the first vacuum sealing cushion rubber 317 between conductive cooling water sealing plate 309 and main body insulating part 313.
Preferably, cathode backplates 315 are aluminum alloy back plate, and aluminum alloy back plate has good inoxidizability and hardness is high.
Magnetron sputtering planar cathode provided in an embodiment of the present invention can be arranged during concrete application in magnetron sputtering
It is true to ensure by the way that vaccum seal ring 318 is arranged between vacuum chamber 316 and cathode backplates 315 in the vacuum chamber 316 of equipment
Sealing between plenum chamber 316 and cathode backplates 315.
Magnetron sputtering planar cathode provided in an embodiment of the present invention exists the first extremely opposite magnet and the setting of the second magnet
On the upper surface of target backboard, and it is parallel be placed in target both ends, in magnetron sputtering process, two magnet are formed closely in target material surface
Like horizontal magnetic field, due to magnet be set to produced by target side at magnetic field directly act on target material surface, can be promoted
The intensity in target material surface magnetic field.Further, since two magnet form the uniform magnetic field for being approximately parallel to target material surface in target material surface
Distribution, therefore the intensity and the Distribution of Magnetic Field uniformity of target material surface magnetic field levels component can be promoted.In addition, the present invention is implemented
First insulating part, the second insulating part are arranged to the structure of the dismountable polyvinyl fluoride thin plate superposition of multilayer in example, pass through change
The quantity of polyvinyl fluoride thin plate, caused target material surface magnetic field will be etched due to target by adjusting relative position between magnet and target
Variation eliminate, it can be ensured that the consistency lifting process stability in magnetic field in entire sputtering process.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiment, the same or similar parts between the embodiments can be referred to each other.
Although the preferred embodiment of the embodiment of the present invention has been described, once a person skilled in the art knows bases
This creative concept, then additional changes and modifications can be made to these embodiments.So the following claims are intended to be interpreted as
Including preferred embodiment and fall into all change and modification of range of embodiment of the invention.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that process, method, article or terminal device including a series of elements not only wrap
Those elements are included, but also include other elements that are not explicitly listed, or further include for this process, method, article
Or the element that terminal device is intrinsic.In the absence of more restrictions, being wanted by what sentence "including a ..." limited
Element, it is not excluded that there is also other identical elements in process, method, article or the terminal device including the element.
Above to a kind of magnetron sputtering planar cathode provided by the present invention, it is described in detail, it is used herein
Principle and implementation of the present invention are described for specific case, and the explanation of above example is only intended to help to understand this
The method and its core concept of invention；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, specific
There will be changes in embodiment and application range, in conclusion the content of the present specification should not be construed as to the present invention's
Limitation.
Claims (9)
1. a kind of magnetron sputtering planar cathode, which is characterized in that including：Target backboard, target, the first insulating part, the second insulation
Part, the first magnet and the second magnet；
The target is bundled on the upper surface of the target backboard, and first insulating part is spread respectively with second insulating part
It is located at the target both ends and is bonded with the upper surface of the target backboard；
First magnet is arranged above first insulating part, and second magnet is arranged on second insulating part
Side, first magnet is opposite with second magnet poles and parallel is placed in the target both ends.
2. magnetron sputtering planar cathode according to claim 1, which is characterized in that first insulating part and described second
Insulating part is magnet, yoke insulating part；
First insulating part is superimposed by the dismountable polyvinyl fluoride thin plate of multilayer with second insulating part and is formed.
3. magnetron sputtering planar cathode according to claim 1, which is characterized in that the magnetron sputtering planar cathode also wraps
It includes：Conductive copper billet, cooling water sealing rubber ring and conductive cooling water sealing plate；
The conduction copper block surface is machined with cooling water circulation passageway, and the conduction copper block surface is provided with anti oxidation layer；
The conduction copper billet is set under the lower surface of the target backboard, the conduction cooling water sealing plate and the cooling water
Sealing rubber ring is set in turn between the lower surface of the target backboard and the conductive copper billet and forms cooling water sealing space.
4. magnetron sputtering planar cathode according to claim 3, which is characterized in that the conduction cooling water sealing plate is Huang
Copper coin.
5. magnetron sputtering planar cathode according to claim 3, which is characterized in that the magnetron sputtering planar cathode also wraps
It includes：Carbon fiber layer；
The carbon fiber layer is set between target backboard lower surface and the conductive cooling water sealing plate.
6. magnetron sputtering planar cathode according to claim 3, which is characterized in that the magnetron sputtering planar cathode also wraps
It includes：Anode cap；
The anode cap is covered in first magnet and second magnet top.
7. magnetron sputtering planar cathode according to claim 6, which is characterized in that the magnetron sputtering planar cathode also wraps
It includes：Yoke, main body insulating part, backboard insulating part and cathode backplates；
Yoke setting below the conductive copper billet, support the conductive copper billet, the anode cap, first magnet with
And second magnet, the yoke provide access for the magnetic field that first magnet and second magnet are formed；
The main body insulating part setting is between the yoke and the conductive copper billet, and insulate the yoke and the conductive copper
Block；
The cathode backplates are arranged below the yoke, and the backboard insulating part is arranged in the yoke and the cathode backplates
Between, insulate the yoke and the cathode backplates.
8. magnetron sputtering planar cathode according to claim 7, which is characterized in that the cathode backplates are carried on the back for aluminium alloy
Plate.
9. magnetron sputtering planar cathode according to claim 1, which is characterized in that the target is bundled in by indium metal
On the upper surface of the target backboard.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810574229.4A CN108396299A (en) | 2018-06-06 | 2018-06-06 | A kind of magnetron sputtering planar cathode |
| PCT/CN2018/106779 WO2019232981A1 (en) | 2018-06-06 | 2018-09-20 | Magnetron sputtering plane cathode |
Applications Claiming Priority (1)
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| CN201810574229.4A CN108396299A (en) | 2018-06-06 | 2018-06-06 | A kind of magnetron sputtering planar cathode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019232981A1 (en) * | 2018-06-06 | 2019-12-12 | 北京铂阳顶荣光伏科技有限公司 | Magnetron sputtering plane cathode |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11323548A (en) * | 1998-05-15 | 1999-11-26 | Toyama Pref Gov | Magnetron sputtering apparatus and film formation |
| CN201068469Y (en) * | 2007-05-15 | 2008-06-04 | 北京京东方光电科技有限公司 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
| CN101519769A (en) * | 2009-04-02 | 2009-09-02 | 电子科技大学 | Plane magnetron sputtering target for improving magnetic field distribution |
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN203700500U (en) * | 2013-12-16 | 2014-07-09 | 湘潭宏大真空技术股份有限公司 | Cathode device |
| CN203768448U (en) * | 2013-12-24 | 2014-08-13 | 上海子创镀膜技术有限公司 | Novel planar cathode for vacuum magnetron sputtering |
| CN207047313U (en) * | 2017-05-31 | 2018-02-27 | 昆山国显光电有限公司 | Magnetic control sputtering device |
| CN208562507U (en) * | 2018-06-06 | 2019-03-01 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067118C (en) * | 1994-07-08 | 2001-06-13 | 松下电器产业株式会社 | Magnetic controlled tube sputtering apparatus |
| JP3655334B2 (en) * | 1994-12-26 | 2005-06-02 | 松下電器産業株式会社 | Magnetron sputtering equipment |
| CN2565842Y (en) * | 2002-07-11 | 2003-08-13 | 中国科学院物理研究所 | Plane magnetic control sputtering target |
| CN101348897B (en) * | 2008-09-12 | 2011-04-20 | 西安工业大学 | Magnetron sputtering apparatus manufactured by magnetic confinement magnetron sputtering method |
| CN108396299A (en) * | 2018-06-06 | 2018-08-14 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
-
2018
- 2018-06-06 CN CN201810574229.4A patent/CN108396299A/en active Pending
- 2018-09-20 WO PCT/CN2018/106779 patent/WO2019232981A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11323548A (en) * | 1998-05-15 | 1999-11-26 | Toyama Pref Gov | Magnetron sputtering apparatus and film formation |
| CN201068469Y (en) * | 2007-05-15 | 2008-06-04 | 北京京东方光电科技有限公司 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
| CN101519769A (en) * | 2009-04-02 | 2009-09-02 | 电子科技大学 | Plane magnetron sputtering target for improving magnetic field distribution |
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN203700500U (en) * | 2013-12-16 | 2014-07-09 | 湘潭宏大真空技术股份有限公司 | Cathode device |
| CN203768448U (en) * | 2013-12-24 | 2014-08-13 | 上海子创镀膜技术有限公司 | Novel planar cathode for vacuum magnetron sputtering |
| CN207047313U (en) * | 2017-05-31 | 2018-02-27 | 昆山国显光电有限公司 | Magnetic control sputtering device |
| CN208562507U (en) * | 2018-06-06 | 2019-03-01 | 北京铂阳顶荣光伏科技有限公司 | A kind of magnetron sputtering planar cathode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019232981A1 (en) * | 2018-06-06 | 2019-12-12 | 北京铂阳顶荣光伏科技有限公司 | Magnetron sputtering plane cathode |
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