TWI665324B - Sputter deposition source, sputter deposition apparatus and method of operating a sputter deposition source - Google Patents

Abstract

According to an aspect of the present disclosure, a sputtering deposition source having at least one electrode assembly is provided, and the at least one electrode assembly is assembled for double-sided sputtering deposition. The electrode assembly includes a cathode for providing a target material to be deposited, wherein the cathode is assembled for generating a first plasma on a first deposition side and a second plasma on the opposite side to the first deposition side One of the second deposition sides; and an anode assembly having at least one first anode and at least one second electrode, the at least one first anode is disposed on the first deposition side to affect the first plasma, and the at least one A second anode is disposed on the second deposition side to affect the second plasma. According to a second aspect, a deposition apparatus having a sputtering deposition source is provided. Furthermore, several methods are provided for operating a sputtering deposition source.

Description

Sputter deposition source, sputtering deposition equipment, and method for operating sputtering deposition source

This disclosure relates to a sputter deposition source that is assembled for double-sided sputter deposition. In particular, the sputtering deposition source can be assembled for coating a first substrate disposed on one of the first deposition sides of the sputtering deposition source, and for coating a second deposition side disposed on one of the sputtering deposition sources. On one of the second substrates. This disclosure is more about a method of coating a substrate by sputtering with one or more thin films, and operating a sputtering deposition source. This disclosure is more about a deposition apparatus including a sputtering deposition source.

Forming a layer with high uniformity on a substrate (that is, having a uniform thickness and consistent electrical properties over an extended surface) is a related issue in many technical fields. For example, in the field of thin film transistors (TFTs), thickness uniformity and uniformity of electrical properties can be an issue for reliably manufacturing display channel regions. Furthermore, a uniform layer generally facilitates reproducibility in manufacturing.

One method for forming a layer on a substrate is sputtering. Sputtering has developed into a valuable method in a variety of manufacturing fields, such as the manufacture of TFTs. During sputtering, the sputtering target is bombarded with energetic particles of the plasma, such as energized ions of an inert or reactive gas, and atoms are emitted from the sputtering target. The emitted atoms can be deposited on the substrate, so that a sputtered material layer can be formed on the substrate.

The sputtering deposition source may include at least one cathode and at least one anode component, including a target, the target is used to provide a coating material to be deposited on a substrate. The electric field can be supplied between the cathode and anode components, so that the gas system between the cathode and anode components is ionized and a plasma is generated. The coating material is provided by plasma ions through a sputtering target.

For example, because of the irregular spatial distribution of the sputtered material that can change over time due to plasma characteristics, it may be difficult to achieve a uniform sputtered material layer over a large substrate surface or from substrate to substrate . Sputtering speed can be increased by providing an array of cathodes. However, it can be difficult to reliably control the properties of two or more plasma clouds. Layer uniformity from substrate to substrate may change.

Therefore, a sputter deposition source and a sputtering apparatus to facilitate a highly uniform layer of the sputtered material are advantageous.

In view of the foregoing, a sputtering deposition source, a deposition apparatus, and several methods for operating a sputtering deposition source and a deposition apparatus are provided.

According to one aspect of the present disclosure, a sputtering deposition source is proposed. The sputter deposition source includes at least one electrode assembly, which is assembled for double-sided sputter deposition, wherein the at least one electrode assembly includes: a cathode for providing a target material to be deposited, wherein the cathode is assembled for generating a A first plasma on a first deposition side and a second plasma on a second deposition side, the second deposition side being opposite to the first deposition side; and an anode assembly having at least a first anode and at least one The second electrode, the at least one first anode is disposed on the first deposition side to affect the first plasma, and the at least one second anode is disposed on the second deposition side to affect the second plasma.

According to other aspects, a deposition apparatus is proposed. The deposition equipment includes a deposition chamber, a sputtering deposition source disposed in the deposition chamber, and a first substrate support region located on a first deposition side of the sputtering deposition source to support a first substrate to be coated. And a second substrate supporting region, which is located on a second deposition side of a sputtering deposition source and is used to support a second substrate to be coated, the second deposition side being opposite to the first deposition side. The sputter deposition source includes at least one electrode assembly, which is assembled for double-sided sputter deposition, wherein the at least one electrode assembly includes: a cathode for providing a target material to be deposited, wherein the cathode is assembled for generating a A first plasma on a first deposition side and a second plasma on a second deposition side, the second deposition side being opposite to the first deposition side; and an anode assembly having at least one first anode and at least one second An electrode, the at least one first anode is disposed on the first deposition side to affect the first plasma, and the at least one second anode is disposed on the second deposition side to affect the second plasma.

According to yet another aspect, a method for operating a sputter deposition source is proposed, and the sputter deposition source is, in particular, a sputter deposition source according to several embodiments described herein. The method includes: generating a first plasma on a first deposition side of a cathode and generating a second plasma on a second deposition side of a cathode, the second deposition side is opposite to the first deposition side; using a configuration At least one first anode on the first deposition side affects the first plasma and / or at least one second anode disposed on the second deposition side affects the second plasma.

In some embodiments, the method further includes configuring a first substrate on the first deposition side to face the first plasma, and configuring a second substrate on the second deposition side to face the second plasma. .

Other aspects, advantages, and features of this disclosure are more significant through the scope, description, and accompanying drawings of the attached patent application. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

Detailed reference will be made with several embodiments disclosed in this disclosure. One or more examples of several embodiments are shown in the drawings. The examples are provided by way of illustration and are not meant to be limiting. For example, features illustrated or described as part of one embodiment can be used in or combined with any other embodiment to obtain yet other embodiments. This means that this disclosure includes such adjustments and changes.

In the following description of the drawings, the same reference numerals refer to the same or similar elements. Generally, only the differences between the individual embodiments are described. Unless stated otherwise, the description of one part or aspect in one embodiment is also applied to the corresponding part or aspect in another embodiment.

The process of coating a substrate with a material as described herein generally refers to a thin film application. The names "coated" and "deposited" are used synonymously herein. The coating process used in the embodiments described herein is sputtering.

The name "substrate" used here should especially include an inflexible substrate, such as a glass plate. This disclosure is not limited thereto and the name "substrate" may also include a flexible substrate, such as a web or foil.

Sputtering can be used in the manufacture of displays. For example, sputtering can be used for metallization, such as producing electrodes or busbars. Sputtering can also be used to produce thin film transistors (TFTs) and to produce indium tin oxide (ITO) layers. Sputtering can also be used to make thin-film solar cells. The thin-film solar cell includes a back contact, an absorption layer, and a transparent and conductive oxide (TCO) layer. Generally, the back contact and the TCO layer are made by sputtering, and the absorption layer can be made in a chemical vapor deposition process.

Some embodiments described herein can be used to coat large area substrates, such as for lithium battery manufacturing or electrochromic windows. As an example, several thin-film batteries may be formed on a large-area substrate. According to some embodiments, the substrate may be a large-area substrate having a substrate surface of 0.5 m ² or more, examples being 4.5th generation, 5th generation, 7.5th generation, 8th generation, or even 10th generation, 4.5th generation Gen. corresponds to a substrate of approximately 0.67 m² (0.73 mx 0.92 m), Gen 5 corresponds to a substrate of approximately 1.4 m² (1.1 mx 1.3 m), Gen 7.5 corresponds to a substrate of approximately 4.29 m² (1.95 mx 2.2 m), The 8th generation corresponds to a substrate of approximately 5.3 m² (2.16 mx 2.46 m), and the 10th generation corresponds to a substrate of approximately 9.0 m² (2.88 m × 3.13 m). Even higher generations such as the 11th generation, 12th generation, and / or the corresponding substrate area can be applied in a similar manner.

FIG. 1 is a cross-sectional view of a sputtering deposition source 100 according to several embodiments described herein. The sputter deposition source 100 includes at least one electrode assembly 120 that is assembled for double-sided sputtering. The electrode assembly 120 may be assembled to coat the first substrate 151 and the second substrate 152. The first substrate 151 is disposed on the first deposition side 10 exemplified as the electrode assembly in the first substrate supporting region 153. The second substrate 152 is disposed on the second deposition side 11 of the electrode assembly, which is exemplified in the second substrate supporting region 154. The second deposition side 11 is opposite to the first deposition side 10.

The electrode assembly 120 includes a cathode 125, and the cathode 125 may include a sputtering target including a target material to be deposited on a substrate. The electrode assembly 120 further includes an anode assembly 130 having at least a first anode 132 and at least a second anode 142. The at least one first anode 132 may be disposed on the first deposition side 10, and the at least one second anode 142 may be disposed on the second deposition side 11. The at least one first anode 132 may be assembled to affect the first plasma 131 generated on the first deposition side 10, and the at least one second anode 142 may be assembled to affect the first plasma 131 generated on the second deposition side 11 Of the second plasma 141.

The “first deposition side” used in the present disclosure can be understood as a first space region on the first side of the electrode assembly 120, for example, in front of the sputtering deposition source in the front-back direction X. The first space region may include a first substrate support region 153 for configuring a substrate to be coated. For example, the substrate disposed in the first substrate supporting region 153 may be coated with atoms or molecules emitted from the front surface of the cathode 125 toward the first deposition side 10. The first plasma 131 may be generated on the first deposition side 10, the first deposition side 10 is adjacent to the front surface of the cathode, and the front surface of the cathode faces the first substrate support region 153.

Similarly, the "second deposition side" used in this disclosure can be understood as a second space region on the second side of the electrode assembly opposite to the first deposition side 10, for example, sputtering in the front-back direction X Behind the deposition source. The second space region may include a second substrate support region 154 for configuring a substrate to be coated. For example, the substrate disposed in the second substrate supporting region 154 may be coated with atoms or molecules emitted from the rear surface of the cathode toward the second deposition side 11. The second plasma 141 may be generated on the second deposition side 11, the second deposition side 11 is adjacent to the rear surface of the cathode 125, and the rear surface of the cathode 125 faces the second substrate support region 154.

Therefore, in some embodiments, the first coating area for coating the first substrate may be disposed on the first deposition side, for example, adjacent to the front surface of the cathode, and the second coating area may be disposed on the second The deposition side 11 is, for example, adjacent to the rear side of the cathode. One or more coating layers may be deposited on the first substrate 151, the first substrate 151 may be disposed on the first deposition side 10 in the first substrate supporting region 153, and one or more coating layers may be deposited on the second substrate On the substrate 152, the second substrate 152 is disposed on the second deposition side 11 in the second substrate supporting region 154.

In some embodiments, the center plane C may extend between the first deposition side 10 and the second deposition side 11. The center plane C may separate the first deposition side 10 and the second deposition side 11. That is, the first space region before the center plane C may correspond to the first deposition side 10, and the second space region after the center plane C may correspond to the second deposition side 11. In some embodiments, the center plane C may extend through the center of the cathode 125 in the front-back direction X. In some embodiments, the electrode assembly 120 may be symmetrical with respect to the center plane C. The symmetrical arrangement of the electrode assemblies can cause the corresponding shapes of the first plasma 131 and the second plasma 141.

The center plane C may extend through the cathode 125 in the center, for example, through the rotation axis A of the cathode 125. In some embodiments, the anode assembly 130 can also be assembled to be symmetrical with respect to the center plane C. Here, the at least one first anode 132 may be disposed on the first side of the center plane C, the first side is the first deposition side 10, and the at least one second anode 142 may be disposed on the center plane C. The second side is on the other side, and the second side is on the second deposition side 11. As used herein, "arranged on the first side" may mean that the geometric center of the first anode is located on the first side of the center plane C. In some embodiments, the entire first anode system is located on the first side of the center plane C. Similarly, "arranged on the second side" as used herein may mean that the geometric center of the second anode is located on the second side of the center plane C. In some embodiments, the second anode system is entirely located on the second side of the center plane C.

According to some embodiments, a first electric field may be supplied between the cathode 125 and the at least one first anode 132, and a second electric field may be supplied between the cathode 125 and the at least one second anode 142. By adjusting the first electric field, the first plasma 131 can be affected, such as shaping, strengthening, or weakening, and by adjusting the second electric field, the second plasma 141 can be affected, such as shaping, strengthening, or weakening. . When the at least one first anode 132 is partially or completely disposed on the first deposition side 10, the first plasma 131 may be selectively affected by the at least one first anode 132. When the at least one second anode 142 is partially or completely disposed on the second deposition side 11, the second plasma 141 may be selectively influenced by the at least one second anode 142. Therefore, according to several embodiments described herein, an improved plasma control system on the first deposition side and on the second deposition side is feasible.

In some embodiments, the first substrate 151 and the second substrate 152 may be coated simultaneously using the sputtering deposition source 100. That is, the electrode assembly 120 of the sputtering deposition source can be assembled for simultaneous double-side sputtering deposition on two different substrates. In this case, the first plasma 131 on the first deposition side and the second plasma 141 on the second deposition side can be generated at the same time, so that the deposition in two opposite directions is feasible. The opposite directions are exemplified toward the first substrate 151 in the forward direction and toward the second substrate 152 in the backward direction.

In some embodiments, the first substrate 151 and the second substrate 152 can be coated simultaneously. In this case, the first substrate 151 and the second substrate 152 may be different substrates or may be the same substrate. For example, the first main surface of the first substrate 151 may be coated on the first deposition side 10 by sputtering from the front surface of the cathode 125, the first substrate 151 may be transferred to the second deposition side 11, and thereafter The first substrate 151 is then referred to as a second substrate 152, which can be recoated on the second deposition side 11 by sputtering from the rear surface of the cathode. Here, the first main surface of the substrate can be coated again and / or the second main surface of the substrate can be coated on the second deposition side 11. Therefore, in some embodiments, the same substrate may be coated twice on different deposition sides.

In terms of other feasibility, the first substrate 151 may be coated on the first deposition side, and then the second substrate 152 may be coated on the second deposition side by sputtering from the rear surface of the cathode, and the second substrate 152 is a substrate different from the first substrate.

By providing the electrode assembly 120 assembled for double-sided sputtering, since both sides of the cathode can be used to coat one or more substrates simultaneously or successively, the processing speed can be increased.

In some embodiments that can be combined with other embodiments described herein, the first substrate support may be disposed on the first deposition side 10 in the first substrate support region 153 to support the first substrate 151 to face The first plasma 131 and the second substrate supporting member may be disposed on the second deposition side in the second substrate supporting region 154 to support the second substrate to face the second plasma 141. The cathode 125 may be located substantially at the center between the first substrate support and the second substrate support. The substrate support may be a movable substrate support, which is assembled for transferring the substrate into and out of the corresponding coating area.

The cathode may be provided as a planar cathode or a curved cathode, such as a cylindrical cathode. Furthermore, the cathode can be assembled as a static cathode or a rotatable cathode.

As shown in the embodiment in FIG. 1, the cathode 125 is a rotatable cathode that is rotatable about a rotation axis A. In particular, the cathode 125 may include a sputtering target to provide a material to be deposited, wherein the sputtering target may be rotatable about a rotation axis A. The sputtering target may include metallic and / or non-metallic materials released from the sputtering target by sputtering and deposited on a substrate. In some embodiments, the cathode 125 may be a cylindrical cathode having a substantially cylindrical shape. When compared to a static planar cathode, a rotatable cathode provides the advantage of a sputtering target material being reliably used around the entire circumference of the sputtering target during sputtering, and no sputtering in the lateral direction of the sputtering target. Advantages of the edge part of the target. On the edge of the sputtering target, less sputtering may occur on the surface of the sputtering target. Therefore, by using a rotatable cathode, material costs can be reduced. In alternative applications, the cathode may be a planar cathode, assembled for double-sided sputtering. The planar cathode may be provided with one, two or more magnet assemblies which may be movable.

According to several embodiments described herein, the front surface of the rotatable cathode may face the first deposition side 10 and the rear surface of the rotatable cathode may face the second deposition side 11. When the cathode is rotatable during deposition, for example, after the cathode is rotated by an angle of 180 °, the portion of the cathode that forms the front surface of the cathode at the first time point may form the rear surface of the cathode at the second time point. The combination of double-sided sputtering and a rotatable cathode can result in good utilization around the entire periphery of the rotatable cathode.

The sputtering target may be made of or include at least one material selected from the group consisting of aluminum, silicon, tantalum, molybdenum, niobium, titanium, indium, gallium, zinc, tin, silver, and copper group. In particular, the target material may be selected from the group including indium, gallium, and zinc. The sputtering target may include some of the materials mentioned above or a mixture of the materials mentioned above. For example, the sputtering target may be an indium tin oxide (ITO) target.

In some embodiments that can be combined with other embodiments described herein, the cathode 125 may be provided with at least one magnetron or magnet assembly. Sputtering can be performed by magnetron sputtering. In some embodiments, the magnet assembly is disposed inside the sputtering target of the target, and is pivotable about a rotation axis of the cathode.

Magnetron sputtering has advantages especially at relatively high deposition rates. By arranging a magnet assembly or a magnetron behind the sputtering material of the sputtering target to capture free electrons in the magnetic field, these electrons are forced to move in the magnetic field and cannot be separated. This generally increases the opportunity by several orders of magnitude to ionize gas molecules. This move in turn increased the deposition rate significantly. For example, in the case of a rotatable sputtering target that may have a substantially cylindrical shape, the magnet assembly may be positioned inside the rotatable sputtering target.

The name "magnet assembly" used herein may mean a unit capable of generating a magnetic field. Generally, the magnet assembly may be composed of a permanent magnet. The permanent magnet may be disposed in the sputtering target so that the charged particles are captured in the generated magnetic field, for example, in a region above the sputtering target. In some embodiments, the magnet assembly includes a yoke.

The substrate may be continuously moved through the electrode assembly 120 during coating ("dynamic coating"), or the substrate may be essentially stationary at a fixed position during coating ("static coating"). The sputter deposition sources described in this disclosure may be related to both the static coating process and the dynamic coating process.

In some embodiments that can be combined with other embodiments described herein, the cathode 125 may be provided with two magnet assemblies. In particular, two magnet assemblies may be disposed inside the rotatable cathode. The first magnet assembly 171 can be assembled for influencing the first plasma 131 on the first deposition side 10, and the second magnet assembly 172 can be assembled for influencing the second plasma 141 on the second deposition side 11 . For example, the first magnet assembly 171 can be oriented so that the first plasma 131 can be confined near the first radial direction, the first radial direction extending from the rotation axis A toward the first deposition side 10, and the second magnet assembly 172 can be oriented so that the second plasma 141 can be confined near the second radial direction, and the second radial direction extends from the rotation axis A toward the second deposition side 11.

In some applications, the first magnet assembly 171 and / or the second magnet assembly 172 may be movable about the rotation axis A, such as being pivotable. The movement of the first magnet component can cause the corresponding movement of the first plasma 131 on the first deposition side 10, and the movement of the second magnet component can cause the corresponding movement of the second plasma 141 on the second deposition side 11. In some embodiments, the first magnet assembly may be fixed to the second magnet assembly, so that the first magnet assembly is movable corresponding to the second magnet assembly. For example, the first magnet assembly and the second magnet assembly may be rotatable together about the rotation axis A in a clockwise direction or a counterclockwise direction. Therefore, by moving the first magnet assembly and the second magnet assembly together, the first plasma 131 and the second plasma 141 can move correspondingly.

In some embodiments that can be combined with other embodiments described herein, the first magnet assembly 171 may be movable independently of the second magnet assembly 172. In this case, the first plasma 131 and the second plasma 141 can be independently moved on the respective deposition sides. The first sputtering direction on the first deposition side may be controlled independently of the second sputtering direction on the second deposition side.

In some embodiments that can be combined with other embodiments described herein, the at least one first anode 132 may be assembled into a first anode rod, the first anode rod extending in the direction of the rotation axis A of the cathode 125, and this At least one second anode 142 may be assembled as a second anode rod, and the second anode rod extends in the direction of the rotation axis A of the cathode 125. The first anode rod and the second anode rod may have a circular cross-sectional shape, an oval cross-sectional shape, a circular cross-sectional shape (as shown in FIG. 1), and a rectangular cross-sectional shape (as shown in FIG. 2). (Shown), or polygonal cross-sectional shape. In some embodiments, the cross-sectional area of the at least one first anode and the at least one second anode may be smaller than the cross-sectional area of the cathode 125. For example, the diameter of the cathode 125 may be larger than the diameter of the at least one first anode and / or the at least one second anode. For example, the diameter of the cathode may be 3 cm or more and 20 cm or less, especially from 5 cm to 12 cm. In some applications, the diameter of the cathode can be greater than 20 cm. The diameters of the first anode and the second anode may be 0.5 cm or more and 5 cm or less, especially from 2 cm to 4 cm, for example 3.5 cm. Other shapes than ring shapes are possible.

In some embodiments, the shape of the at least one first anode may correspond to the shape of the at least one second anode. Furthermore, the distance between the at least one first anode and the cathode may correspond to the distance between the at least one second anode and the cathode. In particular, the configuration of the anode assembly may be symmetrical with respect to the center plane C. The at least one first anode and the at least one second anode may include a conductive outer surface, and the conductive outer surface will be provided with an individual anode potential. In some applications, a cooling channel may be disposed inside the at least one first anode and / or the at least one second anode to cool individual anodes.

FIG. 2 is a cross-sectional view of a sputtering deposition source 200 according to the embodiment described herein. The sputter deposition source 200 includes at least one electrode assembly 120 that is assembled for double-sided sputter deposition. Most of the characteristics of the sputtering deposition source 200 may correspond to the individual characteristics of the sputtering deposition source 100 shown in FIG. 1, so that the reference can be reached by the above description, and the above description is not repeated here.

The sputtering deposition source 200 may include a rotatable cathode to provide a target material to be deposited, wherein the sputtering source from the opposite side of the cathode, particularly from the front surface of the cathode and from the rear surface of the cathode, is arranged The first substrate 151 on the first deposition side 10 and the second substrate 152 disposed on the second deposition side 11 can be coated.

In the embodiment shown in FIG. 2, the anode assembly 130 includes two first anodes (hereinafter referred to as a left first anode 231 and a right first anode 232) disposed on the first deposition side 10 and an arrangement Two second anodes (hereinafter referred to as left second anode 241 and right second anode 242) on the second deposition side 11. In some embodiments, the left first anode 231 may be disposed on the first side of the cathode. This first side is exemplified on the left side, and the right first anode 232 may be disposed on the second side of the cathode. This second On the side is exemplified the side opposite the first side, especially on the right side. The cathode 125 may be disposed at an intermediate position between the left first anode 231 and the right first anode 232. Similarly, in some embodiments, the left second anode 241 may be disposed on the first side of the cathode. This first side is exemplified on the left side, and the right second anode 242 may be disposed on the second side of the cathode. This second side is exemplified on the side opposite to the first side, especially on the right side. The cathode 125 may be disposed at an intermediate position between the left second anode 241 and the right second anode 242.

For example, the cathode may be disposed in the middle of the two first anodes. In addition, the cathode may be disposed at an intermediate position between the two second anodes. The left-right direction here means a direction perpendicular to the front-rear direction X (shown in FIG. 1) of the electrode assembly. By providing two first anodes on the first deposition side and two second anodes on the second deposition side, the first plasma 131 can be generated on the two on the first deposition side in front of the front surface of the cathode. Between the first anode and the second plasma 141 may be generated between the two second anodes on the second deposition side of the rear surface of the adjacent cathode. Separating the plasma from the plasma generated from the adjacent electrode assembly can improve and provide individual plasma control.

In some applications, the two first anodes and the two second anodes may be symmetrical with respect to the center plane C. In particular, the electrode assembly of the sputtering deposition source 200 may be symmetrical with respect to the center plane C, and the center plane C may intersect through the rotation axis A of the cathode 125.

In some embodiments that can be combined with other embodiments described herein, the partition wall 160 may be disposed in the center plane C so that the first deposition side extends on the front side of the center plane C and the second deposition side extends on the center Face C is on the back side. For example, the partition wall 160 can be assembled so that the separation between the first plasma 131 and the second plasma 141 can be improved. In particular, the first electric field supplied between the cathode 125 and the at least one first anode 132 and the second electric field supplied between the cathode 125 and the at least one second electrode 142 can be more effectively separated. In some embodiments, the partition wall can be made of a conductive material that can be grounded. The conductive material is, for example, a metal. In other embodiments, the partition wall may be made of an insulator, and the insulator is exemplified by a dielectric material.

The partition wall 160 may be disposed between the at least one first anode 132 and the at least one second anode 142. The partition wall 160 may include two or more wall sections. In some applications, the cathode 125 may be disposed between the first wall section 161 and the second wall section 162 of the partition wall 160. Each wall section may be arranged between a first anode disposed on the first deposition side and a second anode disposed on the second deposition side.

For example, in the embodiment of FIG. 2, the partition wall 160 includes a first wall section 161 disposed on the left side of the rotatable cathode between the left first anode 231 and the left second anode 241. The second wall section 162 of the partition wall 160 may be disposed on the right side of the rotatable cathode between the right first anode 232 and the right second anode 242.

In some embodiments, more than two wall sections may be provided to separate the first deposition side from the second deposition side. In some embodiments, the minimum distance between the partition wall 160 and the cathode 125 may be 1 cm or less, particularly 5 mm or less, and more particularly 1 mm or less.

As shown in FIG. 2, the first plasma 131 generated on the first deposition side 10 may include a left plasma cloud and a right plasma cloud, and the left plasma cloud may be mainly affected by the left first anode 231 and the right The plasma cloud may be mainly affected by the right first anode 232. The second plasma plasma 141 generated on the second deposition side 11 may include a left plasma cloud and a right plasma cloud. The left plasma cloud may be mainly affected by the left second anode 241 and the right plasma cloud may be mainly affected by the right second anode. 242 effects. In some embodiments, the intensity of the plasma cloud can be individually affected by adjusting the anode potential of the anode of the individual plasma cloud. Spatially resolved plasma control is feasible. In some applications, the two first anodes can be assembled to affect the first plasma 131, and the two second anodes can be assembled to affect the second plasma 141.

FIG. 3 is a cross-sectional view of a sputtering deposition source 300 according to the embodiment described herein. Most of the characteristics of the sputtering deposition source 300 may correspond to the individual characteristics of the sputtering deposition source 200 of FIG. 2, so that reference can be made by the above description, and the above description is not repeated here.

Similar to the embodiment of FIG. 2, the electrode assembly of the sputtering deposition source 300 includes a cathode 125 and an anode assembly 130. The anode assembly 130 has at least one first anode 132 (for example, a pair of A first anode) and the at least one second anode 142 (for example, a pair of second anodes) disposed on the second deposition side 11. The at least one first anode 132 is optionally provided as a left first anode 231 and the right first anode 232, and the at least one second anode 142 is optionally provided as a left second anode 241 and a right second anode 242, as described above. Explained.

In some embodiments that may be combined with other embodiments described herein, a power configuration 310 may be provided. The power configuration 310 can be assembled for powering the electrode assembly. In some embodiments, the power configuration 310 may be configured to connect the cathode 125 to the cathode potential P, to connect the at least one first anode 132 to the first anode potential P1, and to connect the at least one second anode 142 At the second anode potential P2. The cathode potential P is exemplified as a negative potential, the first anode potential P1 is exemplified as a first positive potential, and the second anode potential P2 is exemplified as a second positive potential. In some embodiments, the first anode potential P1 may correspond to the second anode potential P2. In some embodiments, the first anode potential P1 may be different from the second anode potential P2. In particular, at least one of the first anode potential P1 and the second anode potential P2 may be adjustable. By adjusting at least one of the first anode potential P1 and the second anode potential P2, at least one of the first plasma 131 and the second plasma 141 can be affected, such as shaping, strengthening, or weakening. For example, by adjusting the first anode potential P1, the intensity of the first plasma 131 can be adjusted to correspond to the intensity of the second plasma 141.

For example, the power configuration 310 may include a power supply having a first output terminal, a second output terminal, and a third output terminal. The first output terminal is connected to the cathode 125 for supplying a cathode potential P (for example, a cathode voltage, such as a negative voltage) to the cathode, and the second output terminal is connected to the at least one first anode 132 for supplying a first anode potential. P1 (for example, the first anode voltage, such as a positive voltage or a ground potential) is here at least a first anode 132, and the third output terminal is connected to this at least a second anode 142 for supplying a second anode potential P2 (for example The second anode voltage is, for example, a positive voltage or an electric potential). Here, at least one second anode 142 is used. The voltage provided by the output of the power supply can be adjusted depending on the situation.

Therefore, in some embodiments, the first electric field may be supplied between the cathode and the at least one first anode, and the second electric field may be supplied between the cathode and the at least one second anode. The first electric field can be adjusted independently of the second electric field, in particular by adjusting at least one of the first anode potential P1 and the second anode potential P2.

In the embodiment shown in FIG. 3, two first anode systems are connected to the first anode potential P1, and two second anode systems are connected to the second anode potential P2. In other embodiments, the two or more first anodes may be connected to different anode potentials, and / or the two or more second anodes may be connected to different anode potentials, respectively. For example, in the embodiment shown in FIG. 8, the left first anode 231 is connected to the left first anode potential P1 / 1, the right first anode 232 is connected to the right first anode potential P1 / 2, and the left first The second anode 241 is connected to the left second anode potential P2 / 1, and / or the right second anode 242 is connected to the right second anode potential P2 / 2. In this case, the left plasma cloud of the first plasma may be affected independently of the right plasma cloud of the first plasma, and the left plasma cloud of the second plasma may be independent of the right plasma of the second plasma. Clouds are affected. Regional plasma control becomes feasible. The uniformity of the deposited layer can be adjusted regionally as appropriate.

In some embodiments, for example, the at least one anode of the at least one first anode 132 or the at least one second anode 142 may additionally or alternatively include two or more anode segments (not shown in the drawings). ). The two or more anode sections may be arranged adjacent to each other in the extending direction of the individual anodes. The extending direction is, for example, perpendicular to the drawing surface. The two or more anode sections of the at least one anode may be individually powered. For example, each anode segment may be connected to an individually adjustable anode segment potential, and / or each anode segment may be connected to a separate anode segment potential via a variable resistor or potentiometer such that flow to individual anodes The current of the segments can be adjusted individually. Therefore, it becomes feasible to analyze the plasma control in a direction perpendicular to the drawing surface. This direction is exemplified in the length direction of the cathode, such as the direction of the rotation axis A.

In some embodiments, in the front-back direction (for example, by individually controlling the first plasma 131 and the second plasma 141), in the direction of the rotation axis A (for example, by individually controlling one or more Anode segment of the anode) and / or in the direction of the center plane C (for example by individually controlling the left and right plasma clouds, as shown in Figure 8, and / or by individually controlling The electrode assembly of the electrode assembly array, as shown in Figure 7), individual plasma control may be feasible. A layer with good layer uniformity can be deposited on one or more substrates.

FIG. 4 is a cross-sectional view of a sputtering deposition source 400 according to the embodiment described herein. Most of the features of the sputtering deposition source 400 in FIG. 4 may correspond to the individual features of the sputtering deposition source 300 in FIG. 3, so that the reference can be reached by the above description, and the above description is not repeated here.

In some embodiments, a power configuration 310 for supplying power to the cathode 125, the at least one first anode 132, and the at least one second anode 142 may be provided. The power configuration 310 may include a first power supply 311 and a second power supply 312. The first power supply 311 may be connected to the cathode 125 and the at least one first anode 132. The second power supply 312 may be connected to the cathode 125. And this at least one second anode 142. The first power supply 311 can be used to adjust a first electric field between the cathode 125 and the at least one first anode, and the second power supply 312 can be used to adjust a second electric field between the cathode and the at least one second anode. electric field.

As shown in FIG. 4, the first output terminal of the first power supply 311 and the first output terminal of the second power supply 312 may be connectable to the cathode 125, wherein the first output of the first power supply 311 Both the terminal and the first output terminal of the second power supply 312 can be assembled to provide a cathode potential P.

In some embodiments, the second output terminal of the first power supply 311 may be connected to the at least one first anode and assembled to provide a first anode potential P1, and the second output terminal of the second power supply 312 may be connected Here, at least one second anode is assembled to provide a second anode potential P2. The first anode potential P1 and / or the second anode potential P2 may be adjusted as appropriate to affect the first plasma 131 and / or the second plasma 141 during sputtering. For example, at least one of the first anode potential P1 and the second anode potential P2 can be adjusted, so that the first plasma 131 on the first deposition side 10 and the second plasma 141 on the second deposition side 11 can be adjusted. Equal in nature.

FIG. 5 is a cross-sectional view of a sputtering deposition source 500 according to the embodiment described herein. Most of the features of the sputtering deposition source 500 in FIG. 5 may correspond to the individual features of the sputtering deposition source 400 in FIG. 5, so that reference can be reached from the above description, and the above description is not repeated here.

In some embodiments that can be combined with other embodiments described herein, a power configuration 310 can be provided for supplying power to the cathode 125, the at least one first anode 132, and the at least one second anode 142. The power configuration 310 may include a first electrical connection 313 and a second electrical connection 314. The first electrical connection 313 is used to connect the at least one first anode 132 to the first anode potential P1, and the second electrical connection 314 is used to connect the at least one The second anode 142 is at a second anode potential P2. In some embodiments, the first anode potential P1 may correspond to the second anode potential P2.

In some applications, the at least one variable resistor or potentiometer 315 may be provided for adjusting at least one of the first resistance of the first electrical connection 313 and the second resistance of the second electrical connection 314.

For example, the first electrical connection 313 may be provided with a first variable resistor to adjust the first resistance, and the second electrical connection 314 may be provided with a second variable resistor to adjust the second resistance. Therefore, by changing the resistance of the first electrical connection 313 and / or the second electrical connection 314, at least one of the first anode current flowing to the at least one first anode and the second anode current flowing to the at least one second anode Adjust according to circumstances. The first plasma 131 may be affected independently of the second plasma 141.

In other embodiments, for example, as shown in FIG. 5, a single variable resistor or potentiometer 315 may be connected between the at least one first anode 132 and the at least one second anode 142. The third terminal of the variable resistor or potentiometer 315 is an example of a control terminal. The third terminal of the variable resistor or potentiometer 315 can be connected to the output terminal of a power supply to provide a first anode potential P1 and a second anode potential P2. The ratio between the first anode current and the second anode current can be adjusted via the variable resistor or the third terminal of the potentiometer 315. The first anode current flows from the output end of the power supply toward the at least one first anode 132, and the second anode current flows from the output end of the power supply toward the at least one second anode 142. Therefore, the intensity ratio between the first plasma 131 and the second plasma 141 can be adjusted according to circumstances. For example, a variable resistor or potentiometer 315 may be used to control the first plasma and the second plasma to remain essentially the same during sputtering.

In some embodiments that can be combined with other embodiments described herein, the sputtering deposition source may include a detector 320 and a control device 330. The detector 320 is used to detect the nature of the deposition, and the control device 330 is used to The detected deposition properties control the power allocation 310.

For example, as exemplarily shown in FIG. 5, the detector 320 may be configured to measure a differential current I _Diff between the at least one first anode 132 and the at least one second anode 142. The control device 330 may be configured to control the variable resistor or the potentiometer 315 according to the detected differential current. For example, a small or disappearing differential current I _Diff between the at least one first anode 132 and the at least one second anode 142 may be advantageous. In some embodiments, if the differential current exceeds a predetermined current threshold, the variable resistor or potentiometer 315 may be adjusted. Therefore, improved plasma control is provided.

Alternatively, for example, in the embodiment shown in FIG. 3 or FIG. 4, a control device (not shown) may be provided for use in accordance with the at least one first anode 132 and the at least one second anode 142. At least one of the first anode potential P1 and the second anode potential P2 is adjusted by the measured differential current. For example, the first plasma 131 may be controlled to correspond to the second plasma 141 in size and / or strength.

In some embodiments, the detector 320 may be configured to measure deposition properties, including one or more of the following: optical properties of at least one of the first plasma and the second plasma, for example, plasma strength (plasma) strength), intensity, brightness or color value; the shape or position of the first plasma and / or the second plasma; the differential current between the first anode and the second anode; between the first anode and the second anode; At least one of a first current between the cathode and the at least one first anode and a second current between the cathode and the at least one second anode; between the cathode and the at least one first anode At least one of the first electric field strength between the cathode and the second electric field strength between the cathode and the at least one second anode; features of at least one layer coated on the first substrate on the first deposition side; on the second deposition side The features of at least one layer coated on the second substrate are, for example, layer uniformity, layer thickness, sheet resistance, or surface resistance uniformity.

FIG. 6 is a cross-sectional view of a sputtering deposition source 600 according to the embodiment described herein. Most of the features of the sputtering deposition source 600 in FIG. 6 may correspond to the individual features of the sputtering deposition source 500 in FIG. 5, so that the reference can be reached by the above description, and the above description is not repeated here.

As shown in the embodiment in FIG. 6, a variable resistor or potentiometer 315 is provided for adjusting at least one of the first resistance of the first electrical connection 313 and the second resistance of the second electrical connection 314. The variable resistor or potentiometer 315 may be controlled by the control device 330.

Based on the nature of the deposition detected by the detector 320, the control device 330 may control a variable resistor or a potentiometer 315. The detector 320 may be an optical detector, and is configured to detect the optical properties of the first plasma 131 and / or the second plasma 141. For example, the detector 320 may be configured to measure the brightness, plasma strength, or color value of the first plasma 131 and / or the second plasma 141. The control device 330 may control the variable resistor or the potentiometer 315 so that the measured property of the first plasma corresponds to the measured property of the second plasma. In some embodiments, closed-loop control may be provided. For example, if the first brightness of the first plasma exceeds the second brightness of the second plasma, by reducing the second resistance of the second electrical connection 314 through the variable resistor or the potentiometer 315, the at least one first The current of the two anodes 142 can be increased. Similarly, if the first brightness of the first plasma is measured to be lower than the second brightness of the second plasma, by reducing the first resistance of the first electrical connection 313 through the variable resistor or the potentiometer 315, The current of the at least one first anode 132 may be increased. Improved plasma control for double-sided sputter deposition is provided.

FIG. 7 is a cross-sectional view of a sputtering deposition source 700 according to the embodiment described herein. Most of the features of the sputtering deposition source 700 in FIG. 7 may correspond to the individual features of the sputtering deposition source 400 in FIG. 4, so that reference can be made from the above description, and the above description is not repeated here.

The sputter deposition source 700 includes an array of two or more electrode assemblies adjacent to each other, such as a linear configuration or a linear array of electrode assemblies. The deposition speed can be increased, and large-area substrates can be coated more quickly using the sputtering deposition source 700, which includes an array of two or more electrode assemblies.

At least one of the electrode assemblies of the sputter deposition source 700 may be assembled into an electrode assembly according to several embodiments described herein, that is, an electrode assembly assembled for double-sided sputtering. In some embodiments, two or more adjacent electrode assemblies may be assembled into an electrode assembly according to the embodiments described herein, where individual possible combinations of features are not repeated here.

For example, as shown in FIG. 7 as an example, the sputtering deposition source 700 may include a first electrode assembly 701 disposed adjacent to the second electrode assembly 702. Each of the first electrode assembly 701 and the second electrode assembly 702 can be assembled for double-sided sputtering deposition, and can include a cathode and an anode assembly. The cathode is an example of a rotatable cathode, which is assembled to generate a first plasma on the first deposition side 10 and a second plasma on the second deposition side 11. The anode assembly has at least one first anode and at least one second anode. The at least one first anode is disposed on the first deposition side, and the at least one second anode is disposed on the second deposition side.

Among them, it will be understood that the cathode and anode assemblies of each of the first electrode assembly 701 and the second electrode assembly 702 or the cathode and anode assemblies of other electrode assemblies may have some or all of any of the above with reference to FIGS. feature. For example, the at least one first anode of the first electrode assembly 701 and the at least one second anode of the first electrode assembly 701 may be respectively composed of a pair of anodes, and the pair of anodes may be arranged in the left-right direction as an example On the opposite side of the cathode of the first electrode assembly 701. Similarly, the at least one first anode of the second electrode assembly 702 and the at least one second anode of the second electrode assembly 702 may be respectively composed of a pair of anodes, and the pair of anodes may be exemplified as being disposed in the left and right directions. On the opposite side of the cathode of the two-electrode assembly 702.

Therefore, in some embodiments, two anodes may be disposed between adjacent cathodes on the first deposition side, and two anodes may be disposed between adjacent cathodes on the second deposition side, respectively. The first plasmas generated by adjacent electrode components on the first deposition side can be preferably separated from each other and / or can be individually controlled, and the second plasmas generated by adjacent electrode components on the second deposition side can be compared with each other. Are preferably separated from each other and / or individually controllable. This is because two anodes can be located between the first plasma of the first electrode assembly 701 and the first plasma of the second electrode assembly 702, and one of the anodes can be assembled to affect the first electricity of the first electrode assembly 701. The plasma and an anode can be assembled to affect the first plasma of the second electrode assembly 702. The same can be applied to individual second plasmas generated by two adjacent electrode assemblies.

In some embodiments that can be combined with other embodiments described herein, a power configuration 710 can be provided for individually powering the two or more electrode assemblies. For example, the power configuration 710 may be configured to control the first plasma of the first electrode assembly independently of the first plasma of the second electrode assembly 702, and to control the second plasma of the first electrode assembly independently of the second electrode assembly 702. A second plasma of an electrode assembly 701.

In particular, in some embodiments, the first anode assembly of the first electrode assembly 701 and the first anode assembly of the second electrode assembly 702 can be individually powered, especially based on the deposition properties that can be measured by the detector. Similarly, the second anode assembly of the first electrode assembly 701 and the second anode assembly of the second electrode assembly 702 can be individually powered, particularly based on the deposition properties that can be separately measured by the detector. The plasma generated by adjacent electrode components can be individually controlled to achieve improved coating results, especially over the entire substrate and / or a uniform coating layer from substrate to substrate.

FIG. 8 illustrates a cross-sectional view of a deposition apparatus 800 according to the embodiment described herein. Most of the characteristics of the sputtering deposition source of the deposition apparatus 800 of FIG. 8 may correspond to individual characteristics of the sputtering deposition source 400 of FIG.

The deposition apparatus 800 may include a deposition chamber 801 such as a vacuum chamber and a sputtering deposition source according to any of the embodiments described herein, wherein the sputtering deposition source is disposed in the deposition chamber. The deposition chamber can be evacuated to a pressure of, for example, 10 mbar or less, especially a pressure of 1 mbar or less.

For example, a first substrate supporting region 153 including a first substrate holding member may be provided on the first deposition side 10 of a sputtering deposition source to support the first substrate 151 to be coated, and for example including a second substrate holding The second substrate supporting region 154 of the piece may be disposed on the second deposition side 11 opposite to the first deposition side 10 to support the second substrate 152 to be coated. Conveying systems for moving substrates into and out of the first and second substrate support areas are available. For example, the substrate holder may be movable.

In the embodiment shown in FIG. 8, the two first anodes (for example, the left first anode 231 and the right first anode 232) of the anode assembly disposed on the first deposition side 10 can be individually powered, and The two second anodes (for example, the left second anode 241 and the right second anode 242) of the anode assembly disposed on the second deposition side 11 can be individually powered.

FIG. 9 shows a flowchart of a method of operating a sputtering deposition source according to the embodiments described herein. The method includes generating a first plasma on the first deposition side 10 of the cathode 125 and generating a second plasma on the second deposition side 11 of the cathode 125 in block 910, the second deposition side 11 being opposite to the first deposition Side 10. In some applications, the first plasma and the second plasma may be ignited and / or combusted substantially simultaneously. In block 920, the first plasma may be affected by at least one first anode (e.g., a pair of first anodes) disposed on the first deposition side 10 and / or the second plasma may be disposed on the second Influence of at least one second anode on the deposition side 11 (for example, using a pair of second anodes). In the selected block 930, the first substrate 151 may be disposed on the first deposition side 10 to face the first plasma 131, and the second substrate 152 may be optionally disposed on the second deposition side 11 to face the second Plasma 141. The first substrate 151 may be coated by sputtering deposition from the front surface of the cathode 125, and the second substrate 152 (which may correspond to the first substrate 151 that has been moved from the first deposition side to the second deposition side) may be applied by Sputter deposition from the surface after the cathode 125 was applied.

The chronological order of blocks 910 to 930 can be changed. For example, before the plasma is generated, the substrate may be disposed on an individual deposition side. The first plasma may be generated by a first electric field provided between the cathode and the at least one first anode, and the second plasma may be generated by a second electric field provided between the cathode and the at least one second anode .

In some embodiments, affecting the first plasma 131 may include adjusting a first electric field between the cathode and the at least one first anode, and affecting the second plasma 141 may include adjusting the cathode and the at least one second anode. Between the second electric field. The first electric field and / or the second electric field can be adjusted to maintain the examples of the first plasma and the second plasma with the same brightness, the same intensity, or the same color value.

In some embodiments, the effect in block 920 may include detecting the deposition property, and controlling the first anode potential P1, the second anode potential P2, and connecting the at least one first anode 132 to the first A first resistor of a first electrical connection 313 of an anode potential P1, and a second resistor of a second electrical connection 314 connected to the at least one second anode 142 at a second anode potential P2.

If the method and deposition equipment disclosed herein can be used to deposit material on a substrate. More specifically, the method disclosed here provides a highly uniform deposited layer and can thus be used to manufacture displays, such as flat panel displays, such as thin film transistors (TFTs). The disclosed method can also be used to make solar cells, especially thin-film solar cells. By providing improved uniformity as its other effect, the overall material loss can be reduced, which is particularly advantageous when using expensive materials. For example, the provided method can be used to deposit an indium tin oxide (ITO) layer in the manufacture of flat panel displays or thin film solar cells.

In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

10‧‧‧ the first deposition side

11‧‧‧Second deposition side

100, 200, 300, 400, 500, 600, 700 ‧‧‧ sputtering deposition sources

120‧‧‧electrode assembly

125‧‧‧ cathode

130‧‧‧Anode assembly

131‧‧‧First Plasma

132‧‧‧first anode

141‧‧‧Second plasma

142‧‧‧Second anode

151‧‧‧First substrate

152‧‧‧Second substrate

153‧‧‧ the first substrate support area

154‧‧‧Second substrate supporting area

160‧‧‧partition wall

161‧‧‧First wall section

162‧‧‧Second Wall Section

171‧‧‧First magnet assembly

172‧‧‧Second magnet assembly

231‧‧‧Left first anode

232‧‧‧right first anode

241‧‧‧left second anode

242‧‧‧right second anode

310, 710‧‧‧ Power configuration

311‧‧‧first power supply

312‧‧‧Second power supply

313‧‧‧First electrical connection

314‧‧‧Second electrical connection

315‧‧‧Variable resistance or potentiometer

320‧‧‧ Detector

330‧‧‧Control

701‧‧‧First electrode assembly

702‧‧‧Second electrode assembly

800‧‧‧ Deposition equipment

801‧‧‧Deposition chamber

910, 920, 930‧‧‧ blocks

A‧‧‧rotation shaft

C‧‧‧ center plane

I _Diff ‧‧‧ Differential Current

P‧‧‧ cathode potential

P1‧‧‧first anode potential

P2‧‧‧Second anode potential

P1 / 1‧‧‧left first anode potential

P1 / 2‧‧‧right first anode potential

P2 / 1‧‧‧left second anode potential

P2 / 2‧‧‧right second anode potential

X‧‧‧ forward and backward direction

In order to make the above features of the disclosure more understandable in detail, a more specific description briefly extracted from the above disclosure may refer to several embodiments. The attached drawings relate to several embodiments of the present disclosure and are described below. Some embodiments are shown in the drawings and explained in detail in the description below. FIG. 1 is a cross-sectional view of a sputtering deposition source according to some embodiments described herein; FIG. 2 is a cross-sectional view of a sputtering deposition source according to some embodiments described herein; FIG. 3 is based on Sectional views of sputter deposition sources according to some embodiments described herein; FIG. 4 is a cross-sectional views of sputtering deposition sources according to some embodiments described herein; FIG. 5 illustrates implementations according to some embodiments described herein Cross-sectional view of a sputtering deposition source according to an example; FIG. 6 illustrates a cross-sectional view of a sputtering deposition source according to some embodiments described herein; FIG. 7 illustrates a sputtering deposition source according to some embodiments described herein Sectional view; FIG. 8 shows a schematic view of a deposition apparatus having a sputter deposition source according to some embodiments described herein; and FIG. 9 shows an operation of a sputter deposition source according to several embodiments described herein Flow chart of the method.

Claims (19)

A sputtering deposition source (100, 200, 300, 400, 500, 600, 700) includes at least one electrode assembly (120) assembled for double-sided sputtering deposition, wherein the at least one electrode assembly (120) includes: a cathode (125) for providing a The deposited target material, wherein the cathode is assembled for generating a first plasma (131) on a first deposition side (10) and a second plasma (141) on a second deposition side (11 ), The second deposition side (11) is opposite to the first deposition side (10), wherein the cathode is a rotatable cathode; and an anode assembly (130) having at least one first anode (132) and At least one second electrode (142), the at least one first anode is disposed on the first deposition side (10) to affect the first plasma (131), and the at least one second anode (142) is disposed on The second deposition side (11) is used to affect the second plasma (141). The sputtering deposition source according to item 1 of the patent application scope, wherein the anode assembly (130) includes two first anodes (231,232) and two second anodes (241,242), and the two first anodes are disposed on the The first deposition side (10) is used to affect the first plasma (131), and the two second anodes are disposed on the second deposition side (11) to influence the second plasma (141) . The sputtering deposition source according to item 2 of the scope of the patent application, wherein a partition wall (160) having one, two or more wall sections (161, 162) is disposed on the first deposition side (10) and the second Between the deposition sides (11). The sputtering deposition source according to item 1 of the patent application scope, wherein the cathode (125) is a rotatable cylindrical cathode. The sputtering deposition source according to item 1 of the scope of the patent application, wherein the cathode (125) is a rotatable cathode with two magnet components arranged therein. The sputtering deposition source according to any one of claims 1 to 5, further comprising: a first substrate support region, located on the first deposition side (10), for supporting a substrate to be coated. A first substrate (151) to face the first plasma (131); and a second substrate supporting area on the second deposition side (11) for supporting a second substrate to be coated ( 152) to face the second plasma (141); wherein the cathode (125) is located substantially at the center between the first substrate support region and the second substrate support region. The sputtering deposition source according to any one of claims 1 to 5, further comprising: an electric power configuration (310) configured for supplying power to the at least one electrode assembly (120). The sputtering deposition source according to item 7 of the scope of patent application, wherein the power configuration (310) is assembled for connecting the cathode (125) to a cathode potential (P) for connecting the at least one first anode (132) at a first anode potential (P1) and for connecting the at least one second anode (142) to a second anode potential (P2). The sputtering deposition source according to item 7 in the scope of patent application, wherein the power configuration (310) includes: a first power supply (311), connected to the cathode (125) and the at least one first anode (132) ) For adjusting a first electric field supplied between the cathode and the at least one first anode; and a second power supply (312) connected to the cathode (125) and the at least one second anode ( 142) for adjusting a second electric field supplied between the cathode and the at least one second anode. The sputtering deposition source according to item 7 of the scope of the patent application, wherein the power configuration (310) includes: a first electrical connection (313) connected to the at least one first anode (132) to a first anode potential ( P1); a second electrical connection (314), connecting the at least one second anode (142) to a second anode potential (P2); and at least one variable resistor or potentiometer (315) for adjusting the first At least one of a first resistor of an electrical connection (313) and a second resistor of the second electrical connection (314). According to the sputtering deposition source described in item 7 of the scope of patent application, it further comprises a detector (320) and a control device (330), the detector is used to detect a deposition property, and the control device is used to detect The deposition property controls the electric power configuration (310), wherein the deposition property includes one or more of the following: at least one of the first plasma (131) and the second plasma (141) an optical property, a Position, or shape; a differential current (I _Diff ) between the at least one first anode (132) and the at least one second anode (142); the cathode (125) and the at least one first anode ( 132), at least one of a first current between the cathode (125) and the at least one second anode (142); the cathode (125) and the at least one first anode ( 132) at least one of a first electric field strength between the cathode (125) and the at least one second anode (142); and on the first deposition side (10) A feature of coating at least one of a first substrate (151) and a second substrate (152) coated on the second coating side (11). The sputtering deposition source (700) according to any one of claims 1 to 5, comprising an array of two or more electrode assemblies (701,702), wherein one of the two or more electrode assemblies (701,702) Each of the electrode assemblies includes: the cathode and the anode assembly, the cathode is assembled for generating the first plasma on the first deposition side (10) and the second plasma on the second deposition side (11) The anode assembly includes the at least one first anode and the at least one second anode. The at least one first anode is disposed on the first deposition side (10), and the at least one second anode is disposed on the second deposition. On the side (11). The sputtering deposition source according to item 12 of the patent application scope further includes a power configuration (710) assembled for individually supplying power to the two or more electrode assemblies (701, 702). The sputtering deposition source according to item 13 of the patent application scope, wherein the power configuration (710) is assembled for individually supplying power to the at least one of the two or more electrode assemblies (701, 702) according to a deposition property, respectively. The first anode and the at least one second anode. A deposition device (800) includes: a deposition chamber (801); the sputtering deposition source according to any one of claims 1 to 6 of the patent application scope is arranged in the deposition chamber (801); a first A substrate supporting area (153) on the first deposition side (10) of the sputtering deposition source for supporting a first substrate (151) to be coated; and a second substrate supporting area (154) Is located on the second deposition side (11) of the sputtering deposition source to support a second substrate (152) to be coated, and the second deposition side (11) is opposite to the first deposition side (10) ). A method for operating a sputtering deposition source, comprising: generating a first plasma (131) on a first deposition side (10) of a cathode (125) and generating a second plasma (141) on the cathode (125) on a second deposition side (11) opposite to the first deposition side (10), wherein the cathode is a rotatable cathode; and affecting the first plasma (131) and / or affecting the second plasma (141), the first plasma is affected by at least one first anode (132) disposed on the first deposition side (10), the second plasma It is affected by at least one second anode (142) disposed on the second deposition side (11). The method according to item 16 of the scope of patent application, wherein influencing the first plasma (131) includes adjusting a first electric field and / or effect between the cathode (125) and the at least one first anode (142) The second plasma (141) includes adjusting a second electric field between the cathode (125) and the at least one second anode (142). The method according to item 17 of the scope of patent application, wherein at least one of the first electric field and the second electric field is adjusted to maintain an equal brightness or color value of one of the first plasma and the second plasma. . The method according to any one of claims 16 to 18, wherein the impact further comprises: detecting a deposition property; and controlling a first anode potential (P1), a second anode potential ( P2), at least one of a first resistance of a first electrical connection (313), and a second resistance of a second electrical connection (314), the first electrical connection is connected to the at least one first anode ( 132) At the first anode potential (P1), the second electrical connection is connected to the at least one second anode (142) at the second anode potential (P2).