CN103114272A - Cylindrical magnetron sputtering cathode - Google Patents
Cylindrical magnetron sputtering cathode Download PDFInfo
- Publication number
- CN103114272A CN103114272A CN2011103650949A CN201110365094A CN103114272A CN 103114272 A CN103114272 A CN 103114272A CN 2011103650949 A CN2011103650949 A CN 2011103650949A CN 201110365094 A CN201110365094 A CN 201110365094A CN 103114272 A CN103114272 A CN 103114272A
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- Prior art keywords
- magnet
- platform
- magnetron sputtering
- mount pad
- negative electrode
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Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 43
- 230000005389 magnetism Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000004062 sedimentation Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
The invention discloses a cylindrical magnetron sputtering cathode. The cylindrical magnetron sputtering cathode comprises a target, a magnetic boot, at least one magnet device and at least one installation base, wherein the magnetic boot is arranged on the interior of the target; the installation base is detachably arranged on the magnetic boot; the installation base is used for detachably fixing the magnet device; the magnet device comprises two first magnets and a second magnet; the installation base comprises two first platforms and a second platform; the first platforms are symmetrically arranged at the two sides of the second platform; the relative height of the first platforms and the second platform can be changed; each first magnet is detachably arranged on one first platform; and each second magnet is detachably arranged on one second platform. According to the cylindrical magnetron sputtering cathode disclosed by the invention, the requirements of different deposition rates or different uniformity degrees in a film coating process are satisfied by changing the relative height of the first platforms and the second platform of the installation base or changing the installation base.
Description
Technical field
The present invention relates to a kind of cylindrical magnetron sputtering negative electrode.
Background technology
Physical vapor deposition (Physical Vapor Deposition is called for short PVD) is a kind of technology of utilizing physics mode deposit film on base material.Magnetron sputtering technique is a kind of of physical gas phase deposition technology.In magnetron sputtering technology, energetic ion (being generally the argon gas ion of electric field acceleration) bombardment target material surface splashes out from target material surface after the energetic ion exchange energy of target material surface ion or atom and incident, and deposit film forming on base material.
At present, in the magnetron sputtering technology Application Areas, what utilization ratio was higher is the cylindrical magnetron sputtering negative electrode.Cylindrical magnetron sputtering negative electrode 200 as shown in Figure 1 comprises cylinder target 201, magnetic boots 203,2 first magnets 205, one second magnet 207,2 first locating slots 209 and one second locating slot 211.Described magnetic boots 203 are installed in described cylinder target 201, and with the coaxial setting of described cylinder target 201.Described the first locating slot 209 and described the second locating slot 211 alternately are opened in a side of described magnetic boots 203.Each first magnet 205 is fixed in each first locating slot 209, and described the second magnet 207 is fixed in the second locating slot 211.The polarity of described the first magnet 205 and the second magnet 207 (the N utmost point and the S utmost point towards) is arranged opposite.Described the second magnet 207 and 2 first adjacent magnets 205 form the magnetic field of symmetrical sealing, electronics are strapped in the surface of cylinder target 201.Because cylinder target 201 is adding under drive unit (not shown) drive and can rotate around its axle center, so its surface etch is comparatively even.In sputter procedure, the magnetic field distribution on cylinder target 201 surfaces as shown in phantom in Figure 1, wherein, 60a, 60b are respectively the horizontal component vertex of the magneticstrength on cylinder target 201 surfaces.Form certain angle theta between the line of the line of described horizontal component vertex 60a and magnetic boots 203 central points and 60b and magnetic boots 203 central points, described angle theta big or small unadjustable.In process of production, in order to change plated film speed and the degree of uniformity of described cylindrical magnetron sputtering negative electrode 200, usually realize with the size of the angle theta that changes described cylindrical magnetron sputtering negative electrode 200 by changing magnetic boots 203.So, some magnetic boots 203 of the angle theta that can form different sizes need to be provided, and then improve production cost; In addition, in the process of changing magnetic boots 203, need to carry out complicated disassemble and assemble work to described the first magnet 205 and the second magnet 207, cause working efficiency to reduce.
Summary of the invention
In view of this, provide a kind of cylindrical magnetron sputtering negative electrode that addresses the above problem.
A kind of cylindrical magnetron sputtering negative electrode, it comprises target, magnetic boots, at least one magnet apparatus and at least one mount pad, described magnetic boots are installed in the inside of described target, and described mount pad is removably disposed on described magnetic boots, and described mount pad is in order to removably to fix described magnet apparatus; Described magnet apparatus comprises 2 first magnets and one second magnet; Described mount pad comprises 2 first platforms and one second platform, described the first platform is symmetricly set on the both sides of described the second platform, relative height between described the first platform and the second platform can change, each first magnet is removably mounted on one first platform, and each second magnet is removably mounted on one second platform.
A kind of cylindrical magnetron sputtering negative electrode, it comprises target, magnetic boots, at least one magnet apparatus and at least two group mount pads, described magnetic boots are installed in the inside of described target, each group mount pad comprises at least one mount pad, described mount pad is removably disposed on described magnetic boots, and described mount pad is in order to removably to fix described magnet apparatus; Described magnet apparatus comprises 2 first magnets and one second magnet; Described mount pad comprises 2 first platforms and one second platform, described the first platform is symmetricly set on the both sides of described the second platform, the first platform in described each group mount pad is different with the relative height between one second platform from each first platform organized in mount pad of relative height and remaining between one second platform, each described first magnet of described the first platform is removably mounted on described first platform, and each described second magnet is removably mounted on described second platform.
Mount pad and the magnet apparatus of cylindrical magnetron sputtering negative electrode of the present invention are separate, and described mount pad is removably disposed on described magnetic boots, so can conveniently carry out installation and removal to described mount pad and magnet apparatus.In coating process, can pass through to change the first platform and the relative height between the second platform of mount pad or pass through to change mount pad, satisfying sedimentation rates different in coating process and the demand of degree of uniformity, and need not magnetic boots and magnet apparatus are changed simultaneously.In addition, in described cylindrical magnetron sputtering negative electrode, a plurality of mount pads and magnet apparatus can be set, can in the situation that do not increase other devices, significantly improve the utilization ratio of target, sedimentation rate and the homogeneity of plated film.
Description of drawings
Fig. 1 is the diagrammatic cross-section of existing cylindrical magnetron sputtering negative electrode.
Fig. 2 is the schematic perspective view of the cylindrical magnetron sputtering negative electrode of preferred embodiment of the present invention.
Fig. 3 is the diagrammatic cross-section of cylindrical magnetron sputtering negative electrode shown in Figure 2.
Fig. 4 is the schematic perspective view of the mount pad of cylindrical magnetron sputtering negative electrode shown in Figure 2.
Fig. 5 is the magnet apparatus of the cylindrical magnetron sputtering negative electrode shown in Figure 2 schematic diagram of arranging.
Fig. 6 is the magnetic line of force of the cylinder target material surface of the cylindrical magnetron sputtering negative electrode shown in Figure 2 schematic diagram of arranging.
The main element nomenclature
| The cylindrical magnetron sputtering negative electrode | 200 |
| The cylinder target | 201 |
| The magnetic boots | 203 |
| The first magnet | 205 |
| The second magnet | 207 |
| The first locating slot | 209 |
| The second locating slot | 211 |
| The horizontal component vertex of magneticstrength | 60a，60b |
| The cylindrical magnetron sputtering |
100 |
| |
10 |
| |
11 |
| |
13 |
| The |
30 |
| |
50 |
| |
70 |
| Through |
310 |
| The |
510 |
| The |
530 |
| The |
550 |
| The |
570 |
| The horizontal component vertex of |
50a，50b |
| The |
511 |
| The |
531 |
| The |
710 |
| The |
730 |
| The |
750 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 2 and Fig. 3, the invention provides a preferred embodiment cylindrical magnetron sputtering negative electrode 100, described cylindrical magnetron sputtering negative electrode 100 comprises target 10, magnetic boots 30, at least one magnet apparatus 50 and at least one mount pad 70.Described magnetic boots 30 are installed in the inside of described target 10.Described mount pad 70 is removably disposed on described magnetic boots 30, and this mount pad 70 is in order to removably to fix described magnet apparatus 50.
Described target 10 is cylindrical target, and it comprises a sputtering surface 11.
The center of described magnetic boots 30 offers a through hole 310, and this through hole 310 is connected cooling in order to target 10 is carried out with cooling water circulating device (not shown), avoids in the overheated and melting of target described in sputter procedure 10.The material of described magnetic boots 30 is pure metal or alloy, as aluminium, aluminium alloy, copper or stainless steel etc., is preferably stainless steel.
Please refer again to Fig. 3, described magnet apparatus 50 comprises 2 first magnets 510, one second magnet 530, two soft magnetism parts 550 and two envelope magnets 570.Described the first magnet 510 is symmetricly set on the both sides of described the second magnet 530; Described soft magnetism part 550 is symmetricly set on the both sides of described the second magnet 530, and each soft magnetism part 550 is between described the second magnet 530 and one first magnet 510.The polarity of described the first magnet 510 and the second magnet 530 (the N utmost point and the S utmost point towards) is arranged opposite.Described the first magnet 510, the second magnet 530 are separately positioned between described two envelope magnets 570, and it is identical that described envelope magnet 570 and the polarity of described the first magnet 510 are arranged, and makes the toroidal magnetic field that forms sealing as shown in Figure 6 between described the first magnet 510 and the second magnet 530.Wherein, described regional 13 is etching region, and described etching region 13 is a certain moment in sputter procedure, and the secondary electron that produces in the electronics that the glow discharge that is fettered by described toroidal magnetic field produces and collision process and target 10 surface collisions form.
In sputter procedure, the magnetic field distribution on target 10 surfaces as shown in phantom in Figure 3,50a wherein, 50b are respectively the horizontal component vertex of the magneticstrength on target 10 surfaces.Form an angle theta between the line of the line of described horizontal component vertex 50a and magnetic boots 30 central points and 50b and magnetic boots 30 central points.
Greater than 1 the time, described magnet apparatus 50 uniformly-spaced is arranged on described magnetic boots 30 when the number of described magnet apparatus 50.Because angle theta is less, the sedimentation rate of plated film is larger, but the homogeneity of plated film will descend simultaneously.In order to reduce the magneticinterference between magnet apparatus 50, guarantee simultaneously good sedimentation velocity and homogeneity, preferably, the number of described magnet apparatus 50 is 1 ~ 4; More preferably, the number of described magnet apparatus 50 is 1 ~ 3.In the present embodiment, the number of described magnet apparatus 50 is 3.
See also Fig. 5, each first magnet 510 is formed by the first magnet 511 vertical stacks of some bar shapeds, and the polarity of described some the first magnet 511 is arranged identical, and the polarity of each the first magnet 511 in described 2 first magnets 510 is arranged also identical.
Described the second magnet 530 is formed by the second magnet 531 vertical stacks of some bar shapeds, and the polarity of described some the second magnet 531 is arranged identical, and arranges opposite with the polarity of described some the first magnet 511.
The N utmost point of the N utmost point of each the first magnet 511 and the line of the S utmost point and each the second magnet 531 and the line of the S utmost point be vertical described sputtering surface 11 all.The magnetic sizableness of described each first magnet 511 and each the second magnet 531.
Described soft magnetism part 550 is separated described the first magnet 510 and the second magnet 530, with prevent above-mentioned both be attached together, also can strengthen in addition the magneticstrength on described target 10 surfaces, with the intensity of glow discharge in the enhancing coating process, and then the sedimentation rate of raising plated film.The material of described soft magnetism part 550 is a kind of in cobalt, nickel and iron, and this soft magnetism part 550 surfaces also are coated with the tetrafluoroethylene rete, are corroded in order to prevent described soft magnetism part 550.
See also Fig. 4, described mount pad 70 is in order to install described magnet apparatus 50.The material of described mount pad 70 is magnetically permeable material, as metal or alloy such as copper, iron, aluminium, stainless steel and carbon steels, is preferably carbon steel.Described magnet apparatus 50 is fixed on the surface of described mount pad 70 by magnetic attraction.Described mount pad 70 comprises 2 first platforms 710, one second platform 730 and 2 the 3rd platforms 750.Described the first platform 710 is symmetricly set on the both sides of described the second platform 730, and described the 3rd platform 750 is symmetricly set on the both sides of described the second platform 730, and each the 3rd platform 750 is between described the second platform 730 and the first platform 710.
The number of described mount pad 70 is more than or equal to the number of described magnet apparatus 50.Greater than 1 the time, described mount pad 70 uniformly-spaced is arranged on described magnetic boots 30 when the number of described mount pad 70.In the present embodiment, the number of described mount pad 70 is 3.
Each first magnet 510 is removably mounted on one first platform 710, and each second magnet 530 is removably mounted on one second platform 730, and each soft magnetism part 550 is removably mounted on one the 3rd platform 750.The width of the width of described the first platform 710 and described the first magnet 510 quite or slightly is wider than the width 1 ~ 2mm of the first magnet 510.The width of the width of described the second platform 730 and described the second magnet 530 quite or slightly is wider than the width 1 ~ 2mm of the second magnet 530.Relative height between described the first platform 710 and the second platform 730 can be regulated.Understandable, be provided with space bar or spaced walls between described the first platform 710 and the second platform 730, when being enough to make described the first magnet 510 and the second magnet 530 spaced apart, described soft magnetism part 550 can omit.
Due to the relative height between described the first platform 710 and the second platform 730 poor when larger angle theta larger, and the size of angle theta directly affects sedimentation rate and the homogeneity of plated film, therefore, before coating film treatment, can be by changing the relative height between described the first platform 710 and the second platform 730, to satisfy the demand of sedimentation rate and degree of uniformity in coating process.
Understandable, when the relative height between described the first platform 710 and the second platform 730 is unadjustable, at least two group mount pads can be provided, each group mount pad comprises at least one mount pad 70, the first platform 710 in described each group mount pad is different with the relative height between one second platform 730 from each first platform 710 organized in mount pad of relative height and remaining between one second platform 730, and described every group of mount pad 70 makes the angle theta difference that is formed at target 10 surfaces.In order to satisfy in different coating process the requirement of sedimentation rate and degree of uniformity, can realize by changing suitable mount pad 70.
The mount pad 70 of cylindrical magnetron sputtering negative electrode 100 of the present invention is separate with magnet apparatus 50, and described mount pad 70 is removably disposed on described magnetic boots 30, so can conveniently carry out installation and removal to described mount pad 70 and magnet apparatus 50.In coating process, relative height between the first platform 710 that can be by changing mount pad 70 and the second platform 730 or by installing the mount pad 70 of the different relative heights between the first platform 710 and the second platform 730, satisfying sedimentation rates different in coating process and the demand of degree of uniformity, and need not magnetic boots 30 and magnet apparatus 50 are changed simultaneously.In addition, a plurality of mount pads 70 and magnet apparatus 50 can be set in described cylindrical magnetron sputtering negative electrode 100, can in the situation that do not increase other devices, significantly improve the utilization ratio of target 10, sedimentation rate and the homogeneity of plated film.
Claims (11)
1. cylindrical magnetron sputtering negative electrode, it comprises target, magnetic boots and at least one magnet apparatus, described magnetic boots are installed in the inside of described target, described magnet apparatus comprises 2 first magnets and one second magnet, it is characterized in that: described cylindrical magnetron sputtering negative electrode also comprises at least one mount pad, described mount pad is removably disposed on described magnetic boots, and described mount pad is in order to removably to fix described magnet apparatus; Described mount pad comprises 2 first platforms and one second platform, described the first platform is symmetricly set on the both sides of described the second platform, relative height between described the first platform and the second platform can change, each first magnet is removably mounted on one first platform, and each second magnet is removably mounted on one second platform.
2. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: described the first magnet is arranged opposite with the polarity between the second magnet.
3. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: the number of described magnet apparatus is 1 ~ 4.
4. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: each first magnet is formed by the first magnet vertical stack of some bar shapeds, the polarity of described some the first magnet is arranged identical, and the polarity of each the first magnet in described 2 first magnets is arranged identical.
5. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: described the second magnet is formed by the second magnet vertical stack of some bar shapeds, the polarity of described some the second magnet is arranged identical, and arranges opposite with the polarity of described some the first magnet.
6. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: the material of described mount pad is magnetically permeable material.
7. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: the number of described mount pad is more than or equal to the number of described magnet apparatus.
8. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: the width of the width of described the first platform and described the first magnet quite or slightly is wider than the width 1 ~ 2mm of the first magnet; The width of the width of described the second platform and described the second magnet quite or slightly is wider than the width 1 ~ 2mm of the second magnet.
9. cylindrical magnetron sputtering negative electrode as claimed in claim 1, it is characterized in that: described magnet apparatus also comprises two soft magnetism parts, described soft magnetism part is symmetricly set on the both sides of described the second magnet, and each soft magnetism part is arranged between described the second magnet and the first magnet.
10. cylindrical magnetron sputtering negative electrode as claimed in claim 9 is characterized in that: the material of described soft magnetism part is a kind of in cobalt, nickel and iron.
11. cylindrical magnetron sputtering negative electrode, it comprises target, magnetic boots and at least one magnet apparatus, described magnetic boots are installed in the inside of described target, described magnet apparatus comprises 2 first magnets and one second magnet, it is characterized in that: described cylindrical magnetron sputtering negative electrode also comprises at least two group mount pads, each group mount pad comprises at least one mount pad, and described mount pad is removably disposed on described magnetic boots, and described mount pad is in order to removably to fix described magnet apparatus; Described mount pad comprises 2 first platforms and one second platform, described the first platform is symmetricly set on the both sides of described the second platform, the first platform in described each group mount pad is different with the relative height between one second platform from each first platform organized in mount pad of relative height and remaining between one second platform, each described first magnet of described the first platform is removably mounted on described first platform, and each described second magnet is removably mounted on described second platform.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110365094.9A CN103114272B (en) | 2011-11-17 | 2011-11-17 | Cylindrical magnetron sputtering negative electrode |
| TW100142751A TW201321539A (en) | 2011-11-17 | 2011-11-22 | Cylindrical magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110365094.9A CN103114272B (en) | 2011-11-17 | 2011-11-17 | Cylindrical magnetron sputtering negative electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103114272A true CN103114272A (en) | 2013-05-22 |
| CN103114272B CN103114272B (en) | 2017-03-29 |
Family
ID=48412689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110365094.9A Expired - Fee Related CN103114272B (en) | 2011-11-17 | 2011-11-17 | Cylindrical magnetron sputtering negative electrode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103114272B (en) |
| TW (1) | TW201321539A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103276364A (en) * | 2013-05-21 | 2013-09-04 | 绵阳市恒信磁性材料有限公司 | Rotary magnetron sputtering target permanent magnet magnetic field source structure |
| CN105234130A (en) * | 2015-10-22 | 2016-01-13 | 苏州求是真空电子有限公司 | Plasma cleaning device suitable for deformable materials |
| CN109423616A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Adjustable magnet, deposition chambers and the method for changing Distribution of Magnetic Field in deposition chambers |
| CN109913822A (en) * | 2019-02-22 | 2019-06-21 | 苏州艾钛科纳米科技有限公司 | A kind of column type cathode assembly that magnetic boots can elapse in real time |
| CN111826623A (en) * | 2020-06-30 | 2020-10-27 | 浙江上方电子装备有限公司 | Magnetron for carrying out magnetron sputtering |
| CN113718214A (en) * | 2021-07-23 | 2021-11-30 | 镇江市德利克真空设备科技有限公司 | High-uniformity cathode platform for magnetron sputtering coating |
| CN116288218A (en) * | 2023-05-16 | 2023-06-23 | 上海治臻新能源股份有限公司 | Sputtering cathode and magnetron sputtering equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003328122A (en) * | 2002-05-10 | 2003-11-19 | Anelva Corp | Magnetron sputtering device |
| CN101285171A (en) * | 2007-05-10 | 2008-10-15 | 胜倍尔超强镀膜（苏州）有限公司 | Rotary cylindrical magnetron sputtering target |
| CN101805888A (en) * | 2009-02-17 | 2010-08-18 | 胜华科技股份有限公司 | Magnetron sputtering cathode |
| US20100213048A1 (en) * | 2009-02-26 | 2010-08-26 | Canon Anelva Corporation | Magnetron sputtering cathode, magnetron sputtering apparatus, and method of manufacturing magnetic device |
| US20110240468A1 (en) * | 2010-04-02 | 2011-10-06 | Hollars Dennis R | Target utilization improvement for rotatable magnetrons |
-
2011
- 2011-11-17 CN CN201110365094.9A patent/CN103114272B/en not_active Expired - Fee Related
- 2011-11-22 TW TW100142751A patent/TW201321539A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003328122A (en) * | 2002-05-10 | 2003-11-19 | Anelva Corp | Magnetron sputtering device |
| CN101285171A (en) * | 2007-05-10 | 2008-10-15 | 胜倍尔超强镀膜（苏州）有限公司 | Rotary cylindrical magnetron sputtering target |
| CN101805888A (en) * | 2009-02-17 | 2010-08-18 | 胜华科技股份有限公司 | Magnetron sputtering cathode |
| US20100213048A1 (en) * | 2009-02-26 | 2010-08-26 | Canon Anelva Corporation | Magnetron sputtering cathode, magnetron sputtering apparatus, and method of manufacturing magnetic device |
| US20110240468A1 (en) * | 2010-04-02 | 2011-10-06 | Hollars Dennis R | Target utilization improvement for rotatable magnetrons |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103276364A (en) * | 2013-05-21 | 2013-09-04 | 绵阳市恒信磁性材料有限公司 | Rotary magnetron sputtering target permanent magnet magnetic field source structure |
| CN105234130A (en) * | 2015-10-22 | 2016-01-13 | 苏州求是真空电子有限公司 | Plasma cleaning device suitable for deformable materials |
| CN105234130B (en) * | 2015-10-22 | 2017-10-27 | 苏州求是真空电子有限公司 | Plasma washing equipment suitable for bent material can be disturbed |
| CN109423616A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Adjustable magnet, deposition chambers and the method for changing Distribution of Magnetic Field in deposition chambers |
| CN109423616B (en) * | 2017-08-31 | 2022-03-11 | 台湾积体电路制造股份有限公司 | Adjustable magnet, deposition chamber and method for changing magnetic field distribution in deposition chamber |
| CN109913822A (en) * | 2019-02-22 | 2019-06-21 | 苏州艾钛科纳米科技有限公司 | A kind of column type cathode assembly that magnetic boots can elapse in real time |
| CN111826623A (en) * | 2020-06-30 | 2020-10-27 | 浙江上方电子装备有限公司 | Magnetron for carrying out magnetron sputtering |
| CN113718214A (en) * | 2021-07-23 | 2021-11-30 | 镇江市德利克真空设备科技有限公司 | High-uniformity cathode platform for magnetron sputtering coating |
| CN113718214B (en) * | 2021-07-23 | 2024-04-05 | 镇江市德利克真空设备科技有限公司 | Cathode platform for magnetron sputtering coating with high uniformity |
| CN116288218A (en) * | 2023-05-16 | 2023-06-23 | 上海治臻新能源股份有限公司 | Sputtering cathode and magnetron sputtering equipment |
| CN116288218B (en) * | 2023-05-16 | 2023-08-22 | 上海治臻新能源股份有限公司 | Sputtering cathode and magnetron sputtering equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103114272B (en) | 2017-03-29 |
| TW201321539A (en) | 2013-06-01 |
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