CN116288218B - Sputtering cathode and magnetron sputtering equipment - Google Patents
Sputtering cathode and magnetron sputtering equipment Download PDFInfo
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- CN116288218B CN116288218B CN202310552116.5A CN202310552116A CN116288218B CN 116288218 B CN116288218 B CN 116288218B CN 202310552116 A CN202310552116 A CN 202310552116A CN 116288218 B CN116288218 B CN 116288218B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 46
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 35
- 230000005291 magnetic effect Effects 0.000 claims abstract description 124
- 238000000429 assembly Methods 0.000 claims abstract description 9
- 230000000712 assembly Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 21
- VQAPWLAUGBBGJI-UHFFFAOYSA-N [B].[Fe].[Rb] Chemical group [B].[Fe].[Rb] VQAPWLAUGBBGJI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 239000012811 non-conductive material Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 24
- 239000011248 coating agent Substances 0.000 abstract description 22
- 239000000758 substrate Substances 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 19
- 239000002245 particle Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a sputtering cathode and a sputtering deposition assembly, wherein the sputtering cathode comprises: a cylindrical target having an inner cavity; the magnetic field assemblies are positioned in the inner cavity of the cylindrical target; the magnetic field component comprises a magnetic yoke, a first magnet and a second magnet, wherein the first magnet and the second magnet are fixedly connected with the magnetic yoke, and the residual magnetic intensity of the first magnet is different from that of the second magnet, so that a magnetic field formed by the magnetic field component is an unbalanced magnetic field, magnetic force lines can extend to the surface of a substrate in the cavity of the magnetron sputtering device, the density of plasma in the cavity of the magnetron sputtering device is improved, and the quality of a deposited coating is improved.
Description
Technical Field
The application relates to the technical field of film preparation, in particular to a sputtering cathode and magnetron sputtering equipment.
Background
The magnetron sputtering technology is one of the most commonly used film preparation technologies in the field of vacuum coating, and is widely applied to various decorative plating and functional plating, such as cutter coating, glass coating, corrosion-resistant coating, conductive coating and the like. When magnetron sputtering is carried out, electrons in a vacuum environment perform spiral motion under the interaction of an electric field and a magnetic field and collide with neutral argon atoms in the environment to generate positively charged argon ions and secondary electrons, the positively charged argon ions collide with a cathode target under the action of the electric field, and target atoms are generated by bombardment to deposit on a substrate, so that the purpose of coating films on the substrate is realized.
The magnetron sputtering cathode is one of the most important devices in the magnetron sputtering technology, a cylindrical cathode is widely adopted at present, the magnetic field of the cylindrical cathode comprises three magnet structures, N poles and S poles are staggered to form a closed balanced magnetic field, most of electrons and ions are gathered on the surface of a target in the form of the magnetic field, the activity of particles is low, the concentration of the particles is obviously reduced along with the increase of the distance from the surface of the target, most of energy is lost when the particles reach the surface of a substrate, and a high-quality high-density film is difficult to form.
Disclosure of Invention
An embodiment of the present application provides a sputtering cathode including:
a cylindrical target having an inner cavity;
the magnetic field assemblies are positioned in the inner cavity of the cylindrical target;
the magnetic field assembly comprises a magnetic yoke, a first magnet and a second magnet, wherein the first magnet and the second magnet are fixedly connected with the magnetic yoke, and the residual magnetic strength of the first magnet is different from the residual magnetic strength of the second magnet.
In a specific embodiment, the first magnet is located on a side of the second magnet away from the center of the cylindrical target;
the remanence of the first magnet is higher than the remanence of the second magnet.
In a specific embodiment, the first magnet has a first surface remote from the yoke, the second magnet has a second surface remote from the yoke, and both the first surface and the second surface are disposed obliquely and in opposite directions.
In a specific embodiment, the first surface is inclined towards a side remote from the second magnet, the second surface is inclined towards a side remote from the first magnet, and both the first surface and the second surface are inclined towards a direction remote from the inner wall of the cylindrical target.
In a specific embodiment, the first surface has an angle α with the horizontal plane, and the second surface has an angle β with the horizontal plane;
0 < alpha < 45 deg. and/or 0 < beta < 45 deg..
In a specific embodiment, the first surface has an angle α of 30 ° to the horizontal and/or the second surface has an angle β of 30 ° to the horizontal.
In a specific embodiment, the first magnet is located on a side of the second magnet away from the center of the cylindrical target;
the maximum height of the first magnet is lower than the maximum height of the second magnet.
In a specific embodiment, the magnetic field assembly further comprises an electromagnetic coil positioned between the first magnet and the second magnet, the electromagnetic coil being configured to be electrically connected to an external power source.
In a specific embodiment, the sputtering cathode further comprises a shielding cover positioned outside the cylindrical target, wherein the shielding cover is made of a non-magnetic conductive material.
In a specific embodiment, the shield is provided with an opening at the location of the magnetic field assembly.
In a specific embodiment, the material of the first magnet is a rubidium-iron-boron or ferrite material, and/or the material of the second magnet is a rubidium-iron-boron or ferrite material.
In a specific embodiment, the material of the magnetic yoke is a ferromagnetic material.
The embodiment of the application also provides a magnetron sputtering device which comprises at least two sputtering cathodes, wherein the sputtering cathodes are the sputtering cathodes.
In a specific embodiment, at least two of the sputter cathode arrays are arranged.
In the embodiment of the application, the magnetic field assembly comprises the magnetic yoke, the first magnet and the second magnet, and the first magnet and the second magnet are fixedly connected with the magnetic yoke, so that the first magnet, the second magnet and the magnetic yoke form an assembly, and the magnetic field assembly and other magnetic field assemblies do not have a common magnet, thereby reducing the risk of winding magnetic force lines of adjacent magnetic field assemblies, being beneficial to forming stable plasmas and further improving the coating effect. In addition, the remanence intensity of the first magnet is different from the remanence intensity of the second magnet, so that the magnetic field formed by the magnetic field assembly is an unbalanced magnetic field, magnetic force lines can extend to the surface of a substrate in the cavity of the magnetron sputtering device, the density of plasma in the cavity of the magnetron sputtering device is improved, and the quality of a deposited coating is improved. In addition, in the embodiment of the application, the formation of the unbalanced magnetic field by the magnetic field component is realized without adding permanent magnets or coils on the outer side of the cylindrical target, so that the space on the outer side of the cylindrical target is not occupied, the array arrangement of a plurality of sputtering cathodes in the cavity of the magnetron sputtering equipment is conveniently realized, the risk that the magnetic fields of the sputtering cathodes are mutually interfered is reduced, stable high-energy plasma is formed in the cavity of the magnetron sputtering equipment, the density of the plasma is improved, and the coating effect on a substrate is further improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
FIG. 1 is a schematic diagram of an array arrangement of sputtering cathodes in a magnetron sputtering apparatus according to an embodiment of the present application;
FIG. 2 is a schematic diagram of the sputtering cathode of FIG. 1 in one embodiment;
FIG. 3 is a schematic diagram of the magnetic field assembly of FIG. 2 in one embodiment.
Reference numerals:
1-sputtering a cathode;
11-a cylindrical target;
12-a magnetic field assembly;
121-a first magnet;
121 a-a first surface;
122-a second magnet;
122 a-a second surface;
123-yoke;
124-electromagnetic coil;
13-a shield;
131-opening;
2-plasma.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
Detailed Description
For a better understanding of the technical solution of the present application, the following detailed description of the embodiments of the present application refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.
The embodiment of the application provides a magnetron sputtering device and a sputtering cathode thereof, as shown in fig. 1, the magnetron sputtering device comprises a sputtering cathode 1, as shown in fig. 2, the sputtering cathode 1 comprises a cylindrical target 11 and a magnetic field assembly 12, and the magnetic field assembly 12 is positioned in an inner cavity of the cylindrical target 11. The magnetron sputtering equipment adopts the principle of vacuum sputtering to carry out film coating. The surface of the target is bombarded with energetic particles of kinetic energy of tens of electron volts or more, so that atoms thereof acquire energy high enough to be sputtered into the gas phase, and such a sputtered, complex particle scattering process is called sputtering. Wherein the bombarded material is referred to as a target (e.g. a cylindrical target 11 as shown in fig. 2). The energetic particles are typically ions, since the ions tend to accelerate or deflect in an electromagnetic field. The vacuum sputtering coating based on the sputtering distance refers to a technology of bombarding the surface of a target material (such as a cylindrical target material 11 shown in fig. 2) by using energetic particles in a vacuum chamber, so that the bombarded particles are deposited on a coiled material to be coated, and the aim of preparing various films by using a magnetron sputtering phenomenon is fulfilled.
In this magnetron sputtering apparatus, the sputtering cathode 1 is an important component for generating a magnetic field to form the plasma 2. When the magnetic field assembly 12 of the sputtering cathode 1 forms a closed equilibrium magnetic field, the magnetic field forms that most of electrons and particles are concentrated on the surface of the cylindrical target 11, the activity of the particles is low, and the concentration of the particles gradually decreases in the direction away from the cylindrical target 11, and most of the energy is lost by the particles on the surface of the substrate to be coated, resulting in low compactness of the coating. In the embodiment of the application, the structure of the magnetic field assembly 12 is changed, so that the magnetic field assembly 12 generates an unbalanced magnetic field, electrons and particles are led into the chamber of the whole magnetron sputtering equipment, the density and activity of the plasma 2 are improved, and the compactness of a coating film on a substrate is further improved.
At present, for the unbalanced magnetic field design of the magnetic field assembly 12 in the sputtering cathode 1, one way is to form an unbalanced magnetic field by adjusting three permanent magnets of the magnetic field assembly 12, however, in the unbalanced magnetic field formed by this way, the magnetic line area parallel to the surface of the cylindrical target 11 is narrow, electrons move along the magnetic line under the action of an electromagnetic field and are more likely to collide with the cylindrical target 11 to annihilate, so that more plasmas cannot be excited, the cylindrical target 11 is difficult to glow, and unnecessary sputtering of the target is caused due to winding of the magnetic line, and the coating effect of a substrate is affected. The other way is to apply additional permanent magnets or coils outside the cylindrical target 11 to extend the magnetic force lines of the cylindrical target 11 into the cavity, so as to improve the plasma density and activity in the cavity space of the magnetron sputtering device, but the permanent magnets or coils added outside the cylindrical target 11 occupy the space in the cavity of the magnetron sputtering device, so that the arrangement of a plurality of sputtering cathodes 1 in the cavity of the magnetron sputtering device is affected, the magnetic fields of the sputtering cathodes 1 have the risk of mutual interference, stable high-energy plasma is difficult to form, and the film coating effect of the base material is affected.
In order to solve the technical problem, in the embodiment of the present application, as shown in fig. 3, the magnetic field assembly 12 includes a magnetic yoke 123, a first magnet 121 and a second magnet 122, where the first magnet 121 and the second magnet 122 are fixedly connected with the magnetic yoke 123, so that the first magnet 121, the second magnet 122 and the magnetic yoke 123 form an assembly, and the magnetic field assembly 12 and other magnetic field assemblies 12 do not have a common magnet, so that the risk of winding magnetic force lines of adjacent magnetic field assemblies 12 is reduced, which is helpful to form stable plasma 2, and further, the coating effect is improved. In addition, the remanence of the first magnet 121 is different from the remanence of the second magnet 122, so that the magnetic field formed by the magnetic field assembly 12 is an unbalanced magnetic field, and magnetic lines of force can extend to the surface of the substrate inside the cavity of the magnetron sputtering device, so that the density of the plasma 2 in the cavity of the magnetron sputtering device is increased, and the quality of the deposited coating is improved. In addition, in the embodiment of the application, the formation of the unbalanced magnetic field by the magnetic field component 12 is not needed to be realized by adding permanent magnets or coils on the outer side of the cylindrical target 11, so that the space on the outer side of the cylindrical target 11 is not needed to be occupied, the arrangement of the arrays of the sputtering cathodes 1 in the cavity of the magnetron sputtering device is convenient to realize, the risk that the magnetic fields of the sputtering cathodes 1 interfere with each other is reduced, stable high-energy plasma 2 is formed in the cavity of the magnetron sputtering device, the density of the plasma 2 is improved, and the coating effect on a substrate is further improved.
The residual magnetic strength refers to the magnetic strength of the magnet, which is saturated, and the magnetic strength of the magnet can be kept at a certain value in the original external magnetic field direction after the external magnetic field is removed. The remanence of a permanent magnet material is mainly affected by the orientation of the individual grains and the domain structure in the material.
Specifically, as shown in fig. 3, the first magnet 121 is located at a side of the second magnet 122 away from the center of the cylindrical target 11, and the remanence of the first magnet 121 is higher than that of the second magnet 122, so that the magnetic lines of force of the first magnet 121 extend outward to the surface of the substrate, and form a complete closed loop with another sputtering cathode 1 disposed opposite to the sputtering cathode 1, as shown in fig. 1, thereby increasing the density of the plasma 2 in the region between the two sputtering cathodes 1.
More specifically, as shown in fig. 3, the first magnet 121 has a first surface 121a far away from the magnetic yoke 123, the second magnet 122 has a second surface 122a far away from the magnetic yoke 123, and the first surface 121a and the surfaces are both inclined and opposite in inclination direction, so that the magnetic lines of force of the first magnet 121 and the second magnet 122 can extend to the outer side of the cylindrical cathode 11, and the risk of winding magnetic lines of force of adjacent magnetic field assemblies 12 is reduced, which is helpful for forming stable plasma 2, and further improving the coating effect.
The first magnet 121 is located at a side of the second magnet 122 away from the center of the cylindrical target 11, the first surface 121a is inclined towards a side facing away from the second magnet 122, the second surface 122a is inclined towards a side facing away from the first magnet 121, that is, the first surface 121a and the second surface 122a are both inclined towards the outer side of the magnetic field assembly 12, at this time, magnetic lines of force between the first magnet 121 and the second magnet 122 extend outwards, and the coverage area is larger, so that stable plasma 2 is formed, and the coating effect is improved. In addition, both the first surface 121a and the second surface 122a are inclined in a direction away from the inner wall of the cylindrical target 11, thereby preventing interference with the inner wall of the cylindrical target 11 when the magnetic field assembly 12 is mounted in the inner cavity of the cylindrical target 11.
Specifically, as shown in fig. 2, when the magnetic field assembly 12 is installed in the cylindrical target 11, for the first magnet 121 and the second magnet 122, the first magnet 121 located at a side of the second magnet 122 away from the center of the cylindrical target 11 is more likely to interfere with the inner wall of the cylindrical target 11 than the second magnet 122, and thus, the maximum height of the first magnet 121 is lower than the maximum height of the second magnet 122, thereby avoiding interference of the first magnet 121 with the inner wall of the cylindrical target 11 when the magnetic field assembly 12 is installed in the cylindrical target 11. Meanwhile, the first magnet 121 and the second magnet 122 with different heights can also form magnetic field strengths with different magnitudes on the first surface 121a and the second surface 122a, thereby realizing unbalanced magnetic fields of the sputtering cathode 1.
In one embodiment, as shown in fig. 3, the first surface 121a forms an angle α with the horizontal plane, and the second surface 122a forms an angle β with the horizontal plane; 0 < alpha < 45 deg. and/or 0 < beta < 45 deg.. For example, α may be 10 °, 20 °, 30 °, 40 °, 45 °, etc., and/or β may be 10 °, 20 °, 30 °, 40 °, 45 °, etc.
At this time, the first surface 121a and the second surface 122a enable the first magnet 121 and the second magnet 122 to form a uniform horizontal magnetic field on the surface of the cylindrical target 11, thereby improving the stability in the sputter deposition process.
In a preferred embodiment, the included angle α between the first surface 121a and the horizontal plane and the included angle β between the second surface 122a and the horizontal plane may be 30 °, so that the magnetic lines of force of the first magnet 121 and the second magnet 122 are parallel to the surface of the cylindrical target 11 as much as possible, thereby further improving the stability during sputter deposition.
In the above embodiments, the material of the first magnet 121 may be a rubidium-iron-boron or ferrite material, and/or the material of the second magnet 122 may be a rubidium-iron-boron or ferrite material. The materials of the first magnet 121 and the second magnet 122 are not limited in the embodiment of the present application as long as it is satisfied that the remanence of the first magnet 121 is higher than the remanence of the second magnet 122.
In addition, the material of the yoke 123 may be a ferromagnetic material, and the yoke 123 can reduce the magnetic line diffusion of the back surface of the cylindrical target 11.
In the above embodiments, the magnetic field assembly 12 may further include an electromagnetic coil 124 disposed between the first magnet 121 and the second magnet 122, the electromagnetic coil 124 may be mounted on the magnetic yoke 123 or other components, the electromagnetic coil 124 is used for being electrically connected with an external power source, the unbalance degree of the magnetic field assembly 12 can be dynamically adjusted by changing the magnitude and/or direction of the current flowing into the electromagnetic coil 124, so as to meet the preparation requirements of different types of coatings, and the magnetic force lines extending from the magnetic field can guide electrons to the surface of the substrate to be coated, so as to improve the plasma density in the cavity of the magnetron sputtering device, and further realize high quality deposition of the coatings.
As shown in fig. 3, the first magnet 121, the second magnet 122, the yoke 123 and the electromagnetic coil 124 form a modularized magnetic field assembly 12, and in practical use, only a specific number of magnetic field assemblies 12 need to be installed in the cylindrical cathode 1, so that the structure and assembly difficulty of the sputtering cathode 1 and the magnetron sputtering device are simplified.
In the embodiment shown in fig. 2, the sputtering cathode 1 further comprises a shielding cover 13 positioned outside the cylindrical target 11, wherein the shielding cover 13 is made of a non-magnetic conductive material, so that the risk of low-energy particle deposition and diffusion to the surface of the substrate is reduced, and the quality of the coating film is further improved.
As shown in fig. 1 and fig. 2, the shielding cover 13 is provided with an opening 131 at the position of the magnetic field assembly 12, so that magnetic lines of force of the magnetic field assembly 12 can extend outwards through the opening 131, the shielding cover 13 is prevented from affecting the outward diffusion of the magnetic lines of force of the magnetic field assembly 12, so that the magnetic field coverage of the magnetic field assembly 12 is larger, stable plasma 2 is formed, and the coating effect is improved.
The magnetron sputtering device comprises at least more than two sputtering cathodes 1, as shown in fig. 1, an array arrangement structure of a plurality of sputtering cathodes 1 in the magnetron sputtering device and magnetic force lines are distributed, wherein the number of the sputtering cathodes 1 in the array arrangement can be two or more than two according to the requirement of actually depositing a coating, a closed unbalanced magnetic field structure is formed by a plurality of groups of sputtering cathodes 1 in a cavity of the magnetron sputtering device, and the magnetic force lines can extend to the surface of a substrate in the cavity of the magnetron sputtering device, so that the density of plasmas 2 in the cavity is improved, and the quality of the deposited coating is improved.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A sputter cathode, said sputter cathode comprising:
a cylindrical target having an inner cavity;
the magnetic field assemblies are positioned in the inner cavity of the cylindrical target;
the magnetic field assembly comprises a magnetic yoke, a first magnet and a second magnet, wherein the first magnet and the second magnet are fixedly connected with the magnetic yoke, and the residual magnetic strength of the first magnet is different from the residual magnetic strength of the second magnet so that a magnetic field formed by the magnetic field assembly is an unbalanced magnetic field;
the first magnet has the first surface of keeping away from the yoke, the second magnet has the second surface of keeping away from the yoke, first surface with the second surface all inclines to set up, and the inclination is opposite, first surface is towards keeping away from one side of second magnet, the second surface is towards keeping away from one side of first magnet, just first surface with the second surface is all towards keeping away from the direction slope of the inner wall of cylinder target.
2. The sputter cathode of claim 1, wherein the first magnet is located on a side of the second magnet away from a center of the cylindrical target;
the remanence of the first magnet is higher than the remanence of the second magnet.
3. The sputter cathode of claim 1, wherein the first surface is at an angle α to the horizontal and the second surface is at an angle β to the horizontal;
0 < alpha < 45 deg. and/or 0 < beta < 45 deg..
4. A sputter cathode according to any one of claims 1-3, characterized in that the first magnet is located on the side of the second magnet remote from the centre of the cylindrical target;
the maximum height of the first magnet is lower than the maximum height of the second magnet.
5. The sputter cathode of any one of claims 1-3, wherein the magnetic field assembly further comprises a solenoid coil positioned between the first magnet and the second magnet, the solenoid coil being for electrical connection to an external power source.
6. A sputter cathode according to any one of claims 1-3, characterized in that the sputter cathode further comprises a shield located outside the cylindrical target, the shield being made of a magnetically non-conductive material.
7. The sputter cathode of claim 6, wherein the shield is provided with an opening at the location of the magnetic field assembly.
8. A sputter cathode according to any one of claims 1-3, characterized in that the material of the first magnet is a rubidium-iron-boron or ferrite material and/or the material of the second magnet is a rubidium-iron-boron or ferrite material.
9. A sputter cathode according to any one of claims 1-3, characterized in that the material of the yoke is a ferromagnetic material.
10. A magnetron sputtering apparatus, characterized in that it comprises at least two sputtering cathodes, said sputtering cathodes being according to any one of claims 1 to 9;
at least two sputtering cathodes are arranged in an array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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