KR930001231B1 - Ion plating method for using magnetic restraint of multiple electrode in mass production and apparatus teerefor - Google Patents

Abstract

The method ionises a tarket material by discharging cathode and bias power in a large capacity vacuum vessel inserting reaction gas and disposing ionization electrode and target and base material to connect with cathode and bias power respectively, and forms a dense film bonded strongly on the surface of the base material by increasing subvoltage with the base material. Uniformly distributed multipoles are disposed on the whole circumference of the vessel to form the minimum uniform magnetic field in the vacuum vessel, and generating ion constraint with high density in the boundary of the minimum uniform magnectic field.

Description

Mass ion plating method and device using multi-pole magnetic field retention principle

1 is a schematic view of a conventional ion plating apparatus.

2 is a schematic view of an ion plating apparatus according to the present invention.

3 is a comparison of the coating water component cloth according to the present invention and the conventional method.

4 is an explanatory diagram of a plasma detention theory by a multipole magnetic field.

Figure 5 is a cross-sectional view of a complex representation of the device of the present invention, the left half (a) the magnetic field is a permanent magnet and the right half (b) is an illustration of the magnetic field is a coil.

6 is a perspective view of the apparatus of the present invention when the magnetic field source is a coil.

7 is a cross-sectional view of a first modified embodiment of the device of the present invention.

8 is a cross-sectional view of a second modified embodiment of the device of the present invention.

9 is a longitudinal sectional view of a third modified embodiment of the device of the present invention.

* Explanation of symbols for main parts of the drawings

1: Magnetic field generating coil 2: Multi-pole magnetic field

3: pole element length 4: detained plasma

5: vacuum container 6: outer wall of vacuum container

7: permanent magnet 8: uniform polar device field area

9: magnetic field coil power supply 10: variable resistor

11: vacuum exhaust port 12: L-type bending tube

13: high vacuum valve 14: oil trap

15 diffusion pump 16 coating area lower limit line

17: vacuum vessel support 18: window

19: cathode 20: cathode power

21: high frequency power supply 22: vacuum gauge

23: bias power 24: rotary table

25: generated ion 26: vacuum pump system

27: base material preheating heater 28: heater power

29: cooling plate 30: rotary table drive motor

31: base material 32: ground shield

33: multipole magnetic field source 34: reactor

35 valve 36 target

37: Film property curve 38: Heating coil

39: heating device 40: vacuum shield Shanghai copper device

41: anode 42: loss area

43: multi-couductor cable

44: connecting cable 45: discharge generating electrode

46: current limiting resistance 47: impurity shielding film

48: coaxial cable

49: reaction gas injection

The present invention relates to a large-capacity ion plating method and apparatus therefor using the multipole magnetic field retention principle.

The ion plating method forms a film in which fine metal vapor particles generated on the target surface are ionized by an ionization electrode or a bias power source, and then strongly and densely adheres the particles to the substrate surface by accelerating a negative voltage applied to the substrate. Recently developed magnetron sputtering source and arc ion source have advantages such as high ionization rate (20-100%), high deposition rate (0.1-2um / min), and can improve the adhesion and density of the film. However, as the ion plating apparatus using such an ion source, the following problems are encountered as the large-capacity ion plating apparatus becomes larger.

That is, firstly, the fine metal vapor particles generated in the target are spatially controlled by the deposition conditions such as the mean free path related to the pressure of the reactor, the ratio of the solid angle between the target and the base material relative to the target area. 600 mm, as it spreads with an uneven distribution In the case of the above-mentioned large-capacity ion plating container, when the size and number of the target and the cathode cannot cover the entire surface of the deposition region, the film properties coated on the base material as shown in Fig. 3 (thickness of film, adhesion between the film and the base material, denseness of the film, metal In the reaction between the vapor particles and the reactor (reactivity, etc.), there is a severe imbalance between the center of the substrate (facing the evaporation source and the front side) and the outer side (looking obliquely to the evaporation source); Depending on the pressure and the evaporation rate of the metal target, there is a degree of difference, but a large number of microdroplets (5 micrometers or more) are formed on the surface of the coating, thereby deteriorating the physical properties of the coating, especially when using an arc ion source. In order to improve the above-mentioned first problem, when the target area is large enough, the target consumption rate varies according to each position. Haro is the inefficiency problems.

As a solution, 4 ″ such as US Pat. No. 4,556,471 There is a method of distributing a small evaporation source having a target size in various directions in various directions, or forming a magnetic field distribution on the back of the target as shown in US Pat. No. 4,724,058 to 10 ″. Although there is a method of uniformly consuming a large target, the former has to increase the number of ion sources and the number of cathode power sources compared to the vacuum container capacity, and is related to the complexity of the device and maintenance of operation due to the increase in the number of ion sources. In the latter case, it is difficult to maintain the vacuum degree of the vacuum vessel at a high vacuum of more than 5 × 10 ^-6 mbar due to the leakage gas generated by mounting the magnetic field forming coil inside the vacuum vessel. In addition, since the temperature increase effect of the base material due to the ion collision is perpendicular to the center of the target, the coating property curve distribution diagram indicated by the dotted line in FIG. 3 is shown in the attached drawing. In addition, since the size of the target must be larger than that of the base material, the area of the target increases proportionally as the device becomes larger. Due to this, there is a problem in that the target use efficiency is sharply lowered when the target is consumed locally due to an increase in the vertical force due to the pressure difference between the outer surface of the target toward the inside of the vacuum apparatus and the inner surface of the cooling water.

The present invention aims not only to solve the problems occurring in the large-capacity ion plating apparatus with a simple structure but also to improve the film properties. The present invention for such an object provides a uniform distribution over the entire outer wall of the vacuum vessel. It forms a multi-pole magnetic field to prevent the plasma generated from the metal ion source from colliding with the cool inner circumferential wall of the vacuum vessel, the surrounding cool gas particles, the cold electrode, etc. and reducing it to the state of the neutral particle of low energy state. Collected in a certain space area and kept at a high density, the collision between ions and electron neutral particles in the plasma is actively promoted, thereby suppressing local non-uniform discharge on the target surface and uniform target density due to the uniform plasma density distribution. Uniform arc spot on arc s It is created to achieve the purpose of uniformity of the coating and expansion of the coating area, suppression of the formation of the coating layer and uniformity of the target consumption by forming the pot), the present invention will be described in detail below with reference to the accompanying drawings. Same as

FIG. 1 is a schematic view showing a conventional ion plating apparatus. The vacuum container outer wall 6 is made of stainless steel, which is a nonmagnetic material, and an electrode is formed by a target 36, a cathode 19, and an anode 41. As shown in FIG. The discharge is generated by the cathode power supply 20 so that the material of the target pops out in the form of ions 25 and neutral particles. The negative electrode of the bias power supply 23 is applied to the base material 31 to directly attract in the case of ions and to ionize by electron collision by glow discharge in the case of neutral particles, thereby accelerating the surface of the base material to form a film. The vacuum vessel itself is grounded for safety and has a mean free path to prevent spoiled, broken or evaporated material other than the target surface. By providing a ground shield 32 at an inner distance (about 1-5 mm), electric discharge was prevented from occurring outside the target surface.

The metal vapor generated from the negative electrode target 36 forms a film on the base material surface 31. The pressure P of the reactor body, the distance d between the target and the base material, the area A _{1 of the} target, and the area A of the base material. ₂ , the ion flux generated at the cathode under the condition of the applied discharge energy P cathodic is distributed on the surface of the base material ″ source flux distribution across a substrate ″ (from CE Wood in'Physice of Thin Films', vol.11, p39) shows the following cosine-distribution.

As shown in this equation, the ion flux generated from the ion source target is incident with the cosine distribution centering on the point (c) facing the ion source target in front, so that the film formed on the base material faces the ion source target in front. The same cosine distribution (cine distribution) around (c) is shown, resulting in a distribution similar to the dotted line 37 'of FIG.

Of course, the equation described above does not change the overall shape according to the process conditions, but the slope, width, etc. may change, in particular, the relationship between the base material area (A ₂ )-target area (A ₁ )-distance (d)-ion source output Can be changed accordingly. For example, if the area A ₁ of the ion source target is significantly larger than the area A _{2 of the} base material or if the distance d between the base material and the ion source is too far, the uniformity of the film can be greatly improved. There will be. However, in the former case, there is a problem that a large ion source target should be used in comparison with the base material to be coated, and therefore, it has to be an uneconomical structure. You will have to. However, an object of the present invention is to increase the uniformity of the film under the conditions of a general ion source target base material.

Based on this equation, the experimental uniformity of the film uniformity is as follows.

Uniformity of film = K d ² (A ₁ / A ₂ ) ^c (1 / P) ^e ............. ...(2)

Where K is the proportional longevity

c, e: experimental constants

Explaining (2) is as follows. The proportionality relationship for d is already known from the above equation. In addition, the relationship between the area ratios (A ₁ / A ₂ ) is a function of the coating device geometry, ion source output P, and so on. There is also a relationship to pressure (1 / P) ^e. If the pressure rises, the mean free path of vapor particles generated at the target surface drops to a small value, which increases the film nonuniformity with distance. . On the other hand, when the pressure decreases, the average free path of the vapor particles generated in the target increases, so that the long distance can be moved without collision. This means that the vapor particles can move within the ion plating apparatus regardless of the distance and geometry, so the smaller the pressure, the higher the film's uniformity, which is the target geometry. ) And the ion source output P determine the proportional coefficient.

In Equation (2), the uniformity of the film refers to the properties of the film, that is, the film thickness, the adhesion of the film-base material, the film compactness, the hardness and the chemical composition of the film (the numerical value at the specific point / the center of the base material). It means the reciprocal of the degree of change of the ratio, and this indicates the degree of uniformity to the outer edge side of the base material of the film based on the film property at the center of the base material.

The conventional apparatus shown in FIG. 1 is different depending on the physical variables as shown in Equation (2), but the film property curve 37 'such as the dotted line curve of the graph of FIG. It shows a sharp drop in progress.

2 is a schematic view of the apparatus of the present invention in which the multipole magnetic field source 33 is provided on the outer wall 6 of the vacuum vessel for the same apparatus as in FIG. 1, where the multipole magnetic field source 33 is a permanent magnet or a magnetic field forming coil is selected. The multi-pole magnetic field source 33 is installed around the outer wall 6 of the vacuum vessel, the upper surface portion, and around the cathode 19. According to the ion plating apparatus according to the present invention, the film physical properties as shown in the film property curve 37 represented by the solid curve of FIG. 3 by the plasma detention theory by the multi-pole magnetic field as described in FIG. Assuming that up to 50% of the center is available, if the multipole magnetic field source 33 is not installed, the effective size of the base material is A, as in the dotted line 37 '. B against narrowness The scope of use can be extended to the extent that the coating area can be extended, and the specific effects thereof will be described in detail in the effect description of the present invention.

4 illustrates the plasma confinement theory by the multipole magnetic field source. Depending on the direction of the magnetic field forming coil (1) The magnetic field is formed in the direction, and when arranged alternately in directions opposite to each other as shown in FIG. 4, the multi-pole magnetic field 2 is formed, and the polar element field 3 is generated at the center. Plasma (ions and electrons) are pushed against a magnetic field in the form of convex projections based on itself, so that the plasma (4) generated in the multipole magnetic field is pushed in against the inner wall of most vacuum vessels, but only two magnetic fields Only the loss area 42 in a straight line is lost. Therefore, the plasma has a much smaller plasma loss region than in the absence of the multipole magnetic field to form a dense detained plasma around the micro magnetic field 3.

Buoy ⊙ and Denotes the opposite direction of each current entering and exiting perpendicular to the ground.

FIG. 5 is a cross-sectional view of the outer wall of the vacuum vessel 6 showing a composite view of the present invention in which a multipole magnetic field source is applied to an actual ion plating apparatus. The left half of the center line is permanent. The case where the multi-pole magnetic field 2 is formed by the magnet 7 is shown, and the right half section b shows the case where the multi-pole magnetic field 2 is formed by the magnetic field forming coil 1 together. At this time, the size of the vacuum vessel outer wall (6) is 500mm in diameter That's it. In (a) of FIG. 5, when the permanent magnet 7 is used as a ferrite system, the surface magnetic field strength must be 1300 gauss or more, and at this time, at the position of the internal uniform polar field length region 8, The distance (D ₁ ) between the magnets should be adjusted so that the magnetic field strength of the component is more than 10 gauss. When the permanent magnet is Sm-Co or Nd-Fe-B magnet, the surface magnetic field strength is over 4,000 gauss, so even if the distance (D ₁ ) between the magnet and the magnet is increased, at the position of the internal uniform polar element field region (8) The magnetic field strength of the component is much stronger to increase the plasma confinement effect, and the number of magnet strings is reduced, so that the area of the loss part is reduced, thereby effectively increasing the plasma density. Since the Damar Sm-Co and Nd-Fe-B magnets have a lower Curie point temperature than the ferrite magnets, they can compensate for the heating effect due to ion collision (e.g., circulate cooling water) Is required).

(B) of FIG. 5 is a case where the multi-pole magnetic field 2 is formed by using the magnetic field forming coil 1 instead of the permanent magnet 7. The intensity of the magnetic field by the magnetic field forming coil 1 is proportional to the coil current. Therefore, the magnetic field strength of the component is adjusted at the position of the internal uniform polar element field region 8 by adjusting the distance D ₂ between the coil power source 9, the variable resistor 10, and the coil. When using a single coil, a large current is required to generate the required magnetic field. Therefore, by using a mueti-conductor cable 43 for the coil 1, the capacity of the coil power source 9 and the thickness of the coil 1 can be reduced. Can be reduced.

When the multi-station magnetic field 2 is formed on the inner side of the outer wall 6 of the vacuum vessel, in the inner space of the vacuum vessel 5, a micro magnetic field region 8 having a uniform distribution of spatial variation of the magnetic field is formed to reach the center of the vessel. The distribution of the magnetic field is almost uniform, so that the space within the pole element disturbance region 8 becomes a confined and homogenized region of the plasma 4, thereby expanding the uniform coating region as shown in the film property curve 37 shown by the solid line in FIG. Let's go. Size B 'of the uniformly minimal magnetic field region 8 of FIG. B of Figure 3 It should be noted that the larger the intensity of the multipole magnetic field 2 is, the smaller the lossy region 42 is, and instead, the size B 'of the microelement field region 8 is reduced. Is expanded toward the inner circumferential wall of the outer wall 6 of the vacuum vessel. This means that by controlling the intensity and spacing (D ₁ , D ₂ ) of the multi-pole magnetic field, it is possible to obtain a uniform coating film over a wide area while increasing plasma density and achieving uniformity.

6 is a perspective view of one embodiment of the apparatus of the present invention when the magnetic field source is the coil 1, wherein the apparatus according to this example forms the cylindrical vacuum vessel 5 by the vessel outer wall 6 and the vacuum vessel support 17 A vacuum pump system is formed by the exhaust port 11, the L-shaped bent pipe 12, the high vacuum valve 13, the oil trap 14, the diffusion pump 15, and the like. By arranging the magnetic field forming coil 1 in a zigzag shape perpendicular to the outer circumferential surface of the outer wall 6 of the vacuum vessel, a multi-pole magnetic field 2 is formed inside the vacuum vessel 5. When the magnetic field forming coil 1 passes through the side surface of the vacuum vessel 5 in a zigzag form as shown in the figure and then encounters the vacuum exhaust port 11, the coils are arranged symmetrically and arranged only up to the lower limit of the coating area 16. . In the case of the upper surface of the vacuum vessel 5, since it is disc-shaped, the same effect as the side surface can be obtained by staggering the current directions 1 '(1 ″) of two adjacent coils so as to form a taiji pattern. At this time, care should be taken so that the current directions (1 ') (1 ″) of two adjacent magnetic field forming coils 1 located at the upper edge of the vacuum vessel 5 are arranged to be opposite to each other, so that the magnetic pole of the multipole magnetic field at the edge of the vacuum vessel. The effect can be obtained. If the magnetic field forming coils 1 are arranged at the corners, when the current directions 1 'and 1 ″ of two adjacent coils 1 are inevitably the same, the two adjacent coils 1 By arranging the magnetic field forming coil 1 as close as possible, the multi-pole magnetic field effect can be maintained as it is.

On the other hand, according to the apparatus of the present invention of FIG. 6, the coil 1 can be obtained by arranging and attaching the permanent magnet 7 as shown in FIG. 5 (a) instead of the above-described magnetic field forming coil 1 as a multi-pole magnetic field source. When the permanent magnet (7) is used in this way, the side of the coating area from the lower limit line (16) to the upper edge without having to be zigzag like the coil (1) in the case of the side Arranged in a straight line, the permanent magnet (7) is arranged in a straight line after the side from the top of the vacuum vessel. In this example, reference numeral 9 denotes a coil power source, 10 a variable resistor, 18 a viewing window, and 43 a multi-wire coil 44 to indicate a connection cable.

7 is a cross-sectional view of the first modified embodiment of the device of the present invention, in which the ion plating apparatus comprises two negative (or magnetron) ion sources, the negative electrode 19 and the target 36 and the positive electrode 41 and the negative electrode power supply. Ions 25 and neutral particles are generated by the discharge consisting of 20, and a discharge generating electrode 45 and a high frequency power source 21 are provided in the middle of the cathode 19 and the anode 41 to ignite the discharge. . When the base material 31 to be ion plated is placed on the rotating and rotating table 24 disposed between the two ion sources, the cathode of the bias power supply 23 is applied to the base material through the current limiting resistor 46. The degree of vacuum of the vacuum vessel 5 is maintained by a vacuum pump system 26 consisting of a high vacuum valve 13, an oil trap 14, a diffusion pump 15, and the like.

A multipole magnetic field source (33) (33 ') (33 ″) is installed surrounding the outer wall of the vacuum vessel (6) to form a multipole magnetic field by permanent magnets or magnetic coils. 3) The output of the coil power source 9 should be able to be adjusted differently in the magnetic field strength of (33 ') (33 ″). In the case of the side surface in which the multi-pole magnetic field 33 is installed, a relatively strong multi-pole magnetic field is required because the entire container surface is a loss part of the plasma. In the case of the multi-pole magnetic field source 33 'and the multi-pole magnetic field source 33 ″, the plasma Since it is the side and the back side of the generator, it is relatively lower than the side of the multipolar magnetic field source 33, and instead focuses on proper adjustment in consideration of the discharge type and target use efficiency of the cathode 19 and the target 36, which are ion sources. As shown in the drawing, an internal uniform micro magnetic field region 8 is formed inside the vacuum ware 5 and the density of the plasma 4 is 10 within the uniform polar field region 8 compared to the case where there is no multi-pole magnetic field 33. Increased more than two times, it is possible to increase the uniformity of the ion-plated film properties. In the case of using the multipolar magnetic field source 33 and the two ion sources, the cathode 19 and the target 36, the uniformity and coating area that can be obtained as an ion plating apparatus using four ion sources without the multipolar magnetic field source A magnification effect can be obtained.

Reference numeral 22 in the drawing denotes a vacuum gauge.

8 is a cross-sectional view of the second modified embodiment of the apparatus of the present invention in which the base material 31 to be ion plated is placed on the annular rotary table 24. In this example, the base material 31 is rotated and rotated on the rotary table 24 for rotating and rotating. Four ion sources consisting of the cathode 19 and the target 36 were installed on the outer surface of the 31, and the heater 27 was installed in the vicinity of the base material in the vacuum vessel 5 to preheat the base material. According to this example, the multipole magnetic field sources 33 and 33 'are arranged not only around the vacuum vessel outer wall 6 and the ion source negative electrode 19 and the target 36, but also inside the annular rotating table 24. Magnetic field sources 33 " 'are arranged. In order to prevent damage of the inner and outer multipole magnetic field sources 33 and 33 ″ 'by the heater 27, a water cooling plate 29 is installed inside the multipole magnetic field source. In this example, the inner and outer multipolar magnetic field sources 33 (3 ″ ') form a magnetic field of the same size to constrain the plasma so that the multipolar magnetic field sources 33' (33 ″ ') around the ion source are formed. As shown in the example of FIG. 1, an emphasis is placed on proper adjustment in consideration of the discharge form of the ion source and the target use efficiency.

The form of ion plating apparatus which can be additionally considered in FIG. 8 is that the cathode 19 and the target 36, which are ion sources, are not outside of the vacuum vessel 5, but are formed of the inner multipole magnetic field source 33 ″ '. It's inside. At this time, the structure of the annular rotary table 24 on which the base material 31 is placed approaches the outer side of the vacuum vessel 6 more and the generation of ions 25 is made from the inside to the outside of the vessel. In this case, the ions 25 generated from the ion source face the inwardly corrugated multipole magnetic field generated by the multipole magnetic field source 33, thereby reducing the size of the loss region, thereby reducing the loss rate of the plasma 4 relatively. do. The arrangement of the ion plating apparatus in the reversed form compared to FIG. 8 has a good effect when the curvature of the outer wall of the vacuum vessel 6 with respect to the target 36 is large and when the strength of the multipole magnetic field is large. However, when the size of the outer wall of the vacuum vessel 6 is large and almost the same as the planar surface, an effect similar to that of FIG. 8 can be obtained even if the shape is reversed.

9 is a longitudinal cross-sectional view showing a third modified example of the apparatus of the present invention in the case where the arrangement of the base material 31 is generally cylindrical. Although similar to the example of FIG. 7, the cathode 19 and the target 36, which are ion sources, enter the inside of the outer wall 6 of the vacuum vessel, and the point of using the vertically moving preheating heater coil 38 is structurally different. Is the point. The ion source is generated and maintained by the same mechanism as in the example of FIG. 7, and the base material 31 and the turntable 24 are rotated and rotated by the drive motor 30. The vacuum of the entire vacuum vessel is maintained by the vacuum pump system 26 connected through the L-shaped bending tube 12, and an impurity shielding film 47 is first installed to prevent the vacuum pump from being damaged by the powder. In this example, a heating coil 38 is installed to surround the base material 31 in a ring form for heating the base material of the base material. The substrate 31 is uniformly preheated while moving downward, and when ion plating is started, the substrate 31 is moved upward and fixed. The heating coil 38 uses a high frequency induction heating device 39 having a frequency of KHz when the base material 31 is almost smooth cylindrical, and the operating frequency (60-240 Hz) when the base material surface is inclined. Infrared heating method is used.

The multi-pole magnetic field source 3 is installed on the top, side, and bottom of the ion source of the vacuum vessel 5, in particular, in the case of the bottom, to prevent damage from the high voltage discharge applied to the generated ion 25 and the turntable 24. To the ground shield (2). According to the present invention apparatus as in this example, since the cathode 19 and the target 36 which are ion sources are located inside the vacuum vessel outer wall 6, the multi-pole magnetic field source 33 is complicated as in the examples of FIGS. 7 and 8. There is no need to constitute. On the other hand, in the case of the outer wall of the vacuum container 6, which is far from the ion source, the arrangement of the multipole magnetic field source 33 is more closely arranged, and more or less sparsely or densely arranged in consideration of the ion source discharge type characteristics in the vicinity and immediately behind the ion source. By doing so, it is possible to increase the density of the plasma 4 as a whole, to improve uniformity, to improve the film properties, and to improve the use of the target. In the drawing, reference numeral 48 denotes a coaxial cable, and 49 denotes that the reactor is injected.

The method and apparatus of the present invention as described above have various improved effects as follows. First, it is possible to increase the enlargement and uniformity of the coating area. That is, the outer wall 6 of the vacuum vessel itself acts as a dissipation source of the plasma 4, so that there is a sudden change in the film properties such as the thickness, adhesion, denseness, and chemical composition of the film, thereby changing the film properties to the center of the base material 31. In Figure 3, where A is less than 50% Compared to the narrow region, the present invention provides a multi-pole magnetic field source 33 to increase the plasma density at the portion where the uniform micro-magnetic field region 8 is formed inside the vacuum vessel 5 and serves as an extinction source. It is possible to enlarge the uniform plasma region as a whole. The multipolar magnetic field source 33 can be used to increase the uniform When the direction magnetic field strength is more than 10-20 gauss, the same point plasma density is increased by more than 10 times so that the film property curve 37 shows the shape of the solid curve of FIG. 3 and the uniform coating area is shown in FIG. B Has been expanded.

For the difference in effect between the present invention and the conventional method, an example in which the thickness of the film in the physical properties of the coated film is shown as an example is shown in the following comparison table.

Test condition: Base material: Si

Ion Source: Ti

Multipolar Magnetic Field Strength: B = 20 Gaussian

Distance between base material and ion source: d = 20Cm

Coating time: 20 minutes

According to the comparison table according to the conventional method, the thickness of the film becomes thinner rapidly from the center of the base material to the outer edge side, so that the range of the uniform coating area is narrow. In the case of the present invention, even if the thickness goes to the outer edge side of the base material, the thickness is relatively gentle. As a result, it is possible to extend the range of the uniform coating area by that amount, so that it is in good agreement with the film property curve of FIG. 3.

Therefore, according to the present invention, by providing a multi-pole magnetic field source for an ion plating apparatus of the same capacity, it is possible to achieve the same film formation effect even with a relatively small ion source and a small number of ion sources. It will have the effect of increasing the magnification and uniformity of the film. Secondly, it has an effect of suppressing the formation of a film layer droplet. In other words, the formation of the film layer mass is particularly serious in the ion plating apparatus using a cathode arc discharge, which is varied depending on the instantaneous local uneven discharge on the target surface, the imbalance between the target-base metal distance and the ion source output reactor pressure. The present invention suppresses local non-uniformity method on the target surface by providing a multi-pole magnetic field and suppresses droplet formation and coating under the same physical conditions by activating collision of electron-generating particles by electron confinement effect on the front of the target. You can improve the illuminance. Third, the effect of achieving uniform target consumption can be achieved. In other words, the N-S-N-S-N... Since the magnetic field distribution of the pattern (10-20 gauss) is formed, a uniform arc spot occurs over the target surface in the case of the cathode no discharge, so that a special magnetic field forming coil installation effect such as US Patent No. 4,724,058 can be obtained. And achieve uniform target consumption.

In the case of the magnetron sputtering source, the target surface magnetic field strength is 400-800 gauss due to the magnetron magnetic field, so the possibility of alteration of the discharge pattern caused by the multipole magnetic field source can be eliminated, but the operating pressure and the applied voltage due to the plasma density increase. It is possible to achieve the effect of reducing and increasing the target uniform consumption.

Claims (14)

In the large-capacity vacuum container into which the reactor is injected, the ionization electrode, the target, and the base material are installed to be connected to the negative electrode and the bias power, respectively, and the target material is ionized by the discharge of the negative electrode and the bias power, and then the negative voltage applied to the base material is accelerated. In forming a film by strongly and densely adhering to the surface of the base material, a multi-pole magnetic field having a uniform distribution is formed throughout the outer periphery of the container so that a uniform minimum magnetic field region is formed inside the vacuum vessel, and the multi-pole magnetic field is generated. Ions form a multipolar magnetic field with a uniform distribution, which generates a multipolar magnetic field. Constrains and detains ions at a high density within the uniform micromagnetic field, while suppressing local uneven discharge on the target surface and generating a uniform arc spot and electrons. Induces the collision of particles to improve the film properties and the consumption of the target Large-capacity ion plating method using a multi-pole magnetic field detention principle, characterized in that uniformly made. The negative electrode 19, the target 36 and the positive electrode 41, which are ion sources, in the nonmagnetic vacuum outer wall 6 of the vacuum vessel 5, which maintains the vacuum and injects the reactor gas into the vacuum pump system 26, Then, the base material 31 is installed to be connected to the negative electrode power source 20 and the bias power source 23, respectively, and the material of the target 36 is ionized by the discharge of the negative electrode power source 20 and the bias power source 23, and then the base material ( In the case where the film is formed by strongly and densely adhering to the surface of the base material 31 by the acceleration of the negative voltage applied to the surface of the substrate 31, the discharge ions are confined in the inside of the vacuum vessel 5 at a high density and uniform discharge is carried out. By arranging the uniformly distributed multipolar magnetic field sources 33 (33 ') (33 ") (33"') over the entire outer circumferential surface of the outer wall of the vacuum vessel 6 so as to form a uniform uniform magnetic field region 8 for induction. Large-capacity ion play using multi-pole magnetic field retention principle Eating device. In the claim 2, the multi-pole magnetic field sources 33, 33 ', 33 " and 33 "' are characterized in that the poles of the magnetic field sources adjacent to each other are permanent magnets 7 arranged in opposite directions. Ion plating apparatus. In the claim 2, the multi-pole magnetic field sources 33, 33 ', 33 ", 33 "' are characterized by being magnetic field forming coils 1 in which the multi-wire coils 43 are arranged so that their current directions are staggered. Ion plating apparatus. 5. The magnetic field forming coil 1 arranged on the side of the vacuum vessel outer wall 6 is arranged in a zigzag shape, and the magnetic field forming coil arranged on the upper surface of the vacuum vessel outer wall 6. (1) is an ion plating apparatus, characterized in that arranged in the form of a taegeuk pattern. In the claim 2, the multi-pole magnetic field source (3) (33 ″) is arranged on the side and back of the negative electrode (19) and the target (36) as an ion source to achieve uniform consumption and suppression of mass formation of the target. Ion plating apparatus. In claim 2, the apparatus comprises a rotary table in which two ion sources, the negative electrode 19 and the target 36, are installed opposite to the vacuum vessel 5 on both sides and the base material 31 rotates and rotates in the center of the container. 24) The ion plating apparatus, characterized in that formed on the. 8. An ion plating apparatus according to claim 7, wherein the apparatus is formed such that the intensity of each multipole magnetic field source 33, 33 ', 33 " is differently adjusted to control the output of the coil power source 9. . In the claim 2, the device comprises an annular rotary table 24 in which four ion sources, a cathode 19 and a target 36, are installed around four of the outer wall 6 of the vacuum vessel, and the base material 31 rotates and rotates. And the inner multipole magnetic field source 33 ″ ″ is arranged in an annular manner so as to face the outer multipole magnetic field source 33 with the base material 31 interposed inside the rotary table 24. Ion plating apparatus. In claim 9, the apparatus is provided with a base material preheater 27 between a portion of the inner wall of the vacuum vessel 6 and the rotary table 24 and a multi-pole magnetic field source 3 inside and outside the preheater 27. (I) formed by installing a water cooling plate (29) for protecting (33 ″ '). In the claim 2, the apparatus comprises a cylindrical base material (31) on a rotating table (24) at the center of the container, with two ion sources, the cathode (19) and the target (36), which are installed opposite the inside of the outer wall of the vacuum vessel (6). ) Is placed and formed by installing a ring-shaped heating coil (38) that is heated by a heating device (39) on the outer circumference of the base material (31). The ion plating apparatus according to claim 11, wherein the apparatus uses a high frequency power source when the base material (31) is a smooth cylindrical shape as a power source of the heating device (39) of the heating coil (38). In claim 11, the device is that the power supply base material 31 of the heating device 39 of the heating coil 38 is an infrared heating method using a commercial frequency (60-240 Hz) power in the case of the uneven form. Ion plating apparatus characterized in that. 12. The ion plating apparatus according to claim 11, wherein the heating coil is formed to be moved up and down by a vacuum shielding vertical movement device.