CN110965036B - Rare earth permanent magnet surface vacuum coating equipment - Google Patents
Rare earth permanent magnet surface vacuum coating equipment Download PDFInfo
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- CN110965036B CN110965036B CN201911365622.3A CN201911365622A CN110965036B CN 110965036 B CN110965036 B CN 110965036B CN 201911365622 A CN201911365622 A CN 201911365622A CN 110965036 B CN110965036 B CN 110965036B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Abstract
The invention relates to equipment for depositing a rare earth metal material on the surface of a rare earth permanent magnet by physical vapor deposition, in particular to vacuum coating equipment for the surface of the rare earth permanent magnet. The problems of low deposition rate, high power consumption and low target utilization rate of the conventional rare earth permanent magnet vacuum coating equipment are solved. The device comprises a shell, a negative plate and a rare earth metal target arranged on the negative plate, wherein the back of the target is provided with a magnetic material; the target is formed by arranging a plurality of segmented targets at equal intervals or unequal intervals, the whole target is in a strip cuboid shape, the length L1 of each segmented target is 2-15% of the length L of the whole target, and the interval L2 between adjacent segmented targets is 30-50% of the length L1 of the segmented target; the magnetic field intensity formed by the magnetic material arranged on the back of the target material is 80 GS-180 GS; the filling amount of argon in the shell keeps the vacuum degree in the shell between 0.8Pa and 3 Pa. The invention improves the utilization rate and the deposition rate of the target material and greatly reduces the power consumption.
Description
Technical Field
The invention relates to equipment for depositing a rare earth metal material on the surface of a rare earth permanent magnet by physical vapor deposition, in particular to vacuum coating equipment for the surface of the rare earth permanent magnet.
Background
A vacuum coating mode is adopted to directly convert light rare earth metal (such as neodymium or praseodymium, lanthanum and cerium) or heavy rare earth metal (dysprosium or terbium, holmium and gadolinium) from a solid state to a plasma state, the light rare earth metal or the heavy rare earth metal is deposited on the surface of the rare earth permanent magnet to form a firm rare earth film layer, then the light rare earth or the heavy rare earth of the surface film layer is diffused and permeated into the permanent magnet along a grain boundary, the rare earth permanent magnet with higher performance can be manufactured, and the using amount of the light rare earth (such as neodymium or praseodymium, lanthanum and cerium) or the heavy rare earth (dysprosium or terbium, holmium and gadolinium) in the rare earth permanent magnet can be reduced, so that the cost is reduced.
The existing rare earth permanent magnet vacuum coating equipment comprises a shell (coating process chamber), wherein an anode plate and a cathode plate which are opposite in position are arranged in the shell, and a single or a plurality of cuboid-shaped parts are arranged on the cathode plateThe strip-shaped rare earth metal target (the strip shape refers to the long and wide length of a cuboid), a substrate (a rare earth permanent magnet needing film coating) is arranged on an anode plate, and a permanent magnet material is arranged at the back of the target to form a magnetic field (the permanent magnet material is arranged between a cathode plate and the target or arranged at the back of the cathode plate). When the device works, a shell (a coating process chamber) is vacuumized to obtain the background vacuum before coating is started, and process gas argon is filled into the coating process chamber (a gas field is formed) after the background vacuum is reached; then starting a power supply, applying voltage between an anode plate and a cathode plate, rapidly converting electric energy into heat energy, rapidly heating the rare earth metal target to a high enough temperature under the action of an electric field to generate ionization effect, generating plasma (outer layer electrons are free from the constraint of atomic nucleus to form free electrons, the electrons leave the atomic nucleus to form a group of uniform ion slurry which is approximately electrically neutral as a whole and consists of positively charged atomic nucleus and negatively charged electrons, namely the plasma), depositing the plasma on the surface of a substrate (rare earth permanent magnet) after crossing an average free path, and simultaneously colliding the electrons of the plasma with argon atoms in the process of flying to the substrate under the action of the electric field to ionize the argon atoms to generate argon positive ions Ar+And argon electrons; argon positive ion Ar+The target material on the cathode plate is accelerated to fly under the action of an electric field, the surface of the target material is bombarded with high energy, the target material is sputtered, and neutral target atoms or molecules in sputtered particles are deposited on a substrate to form a coating film. The argon electrons are subjected to a magnetic field, confined in the plasma region near the target surface, and ionize a greater amount of argon positive ions Ar + in this region to bombard the target, again increasing the deposition rate. As the number of collisions increases, the energy of the argon electrons is depleted, gradually moving away from the plasma region and eventually depositing on the substrate under the action of the electric field to form a thin film.
In the sputtering process of the target, under the influence of the magnetic field intensity and the magnetic field distribution (as shown in fig. 2), electrons are intensively restricted in a local area on the surface of the target along magnetic lines to continuously bombard the target, the target which is originally regular forms a groove (called target etching), the target etching morphology determines the target utilization rate (the target utilization rate is 1-the residual target weight divided by the original target weight multiplied by 100%), when the depth of the etched groove is close to the target thickness, vacuum coating cannot be continuously carried out, and the target needs to be replaced.
Therefore, the vacuum coating is completed under the combined action of the electric field, the magnetic field and the gas field, the process parameters of the electric field, the magnetic field and the gas field are different, the plasma yield is different, the corresponding deposition rate is different, and simultaneously, the power consumption and the utilization rate of the target material are different.
The existing rare earth permanent magnet vacuum coating equipment has poor selection of process parameters of an electric field, a magnetic field and a gas field, low utilization rate of a target material, low deposition rate and high power consumption; the cost of the light rare earth metal (such as neodymium or praseodymium, lanthanum and cerium) or heavy rare earth metal (dysprosium or terbium, holmium and gadolinium) target material is high, so that the rare earth metal vacuum coating on the surface of the current rare earth permanent magnet is high in cost. The reasons for the above-mentioned drawbacks are:
firstly, the magnetic field intensity formed by arranging the permanent magnetic material on the back of the target material is higher and generally reaches more than 400GS, the distribution of the magnetic field on the rectangular strip-shaped rare earth metal target material is in a form that two sides are high and the middle is low (see figure 2), the magnetic field restrains electron motion during film coating, so that two sides are mainly etched, and the residual proportion of the middle part is very large (see figure 3), so that the utilization rate of the target material is low.
Secondly, in terms of electric field, although the electric power given to the target by the electric field is large, since the target is a massive rectangular parallelepiped in the shape of a bar (see fig. 1), the volume is large, and the power density (ratio of electric power to target volume) applied to the target is actually small, about 0.002KW/cm3～0.004KW/cm3This results in a low yield of ionized plasma and a corresponding low deposition rate. However, the rare earth metal target material has low electrical conductivity and thermal conductivity, unlike the target material made of copper, aluminum, or the like, and if it is desired to increase the power density acting on the target material by increasing the electric power, there is no economically suitable power source to support it.
Thirdly, during operation, the argon filled in the coating chamber has lower concentration (coating tool after argon filling)The vacuum degree in the process chamber is generally between 0.1Pa and 0.01 Pa), so that the yield of argon positive ions Ar & lt + & gt can not be effectively increased; on the other hand, at 0.002KW/cm3～0.004KW/cm3Even if the argon concentration is increased under the condition of the electric power density, the argon positive ion Ar + yield is not obviously increased due to the limitation of lower electric power density.
Disclosure of Invention
The invention solves the problems of low deposition rate, high power consumption and low target utilization rate of the existing rare earth permanent magnet vacuum coating equipment, and provides the rare earth permanent magnet vacuum coating equipment. The problems in the prior art are solved by optimizing the process parameters of the electric field, the magnetic field and the gas field.
The invention is realized by adopting the following technical scheme: the vacuum coating equipment for the rare earth permanent magnet comprises a shell, a negative plate and a rare earth metal target arranged on the negative plate, wherein the back of the target is provided with a magnetic material; the target is formed by arranging a plurality of segmented targets at equal intervals or unequal intervals, the whole target is in a strip cuboid shape, the length L1 of each segmented target is 2-15% of the length L of the whole target, and the interval L2 between adjacent segmented targets is 30-50% of the length L1 of the segmented target; the magnetic field intensity formed by the magnetic material arranged on the back of the target material is 80 GS-180 GS; when the vacuum coating device works, the shell is firstly vacuumized until the vacuum degree is lower than 0.03Pa so as to obtain the background vacuum before coating is started; after the background vacuum is reached, argon is filled into the shell, and the filling amount of the argon keeps the vacuum degree in the shell between 0.8Pa and 3 Pa.
The increase of the concentration of argon can increase cascade collision and improve the yield of argon positive ions Ar +, but when the concentration is too high, the average free path of plasma is limited, and the deposition speed is influenced; the invention increases the argon concentration and simultaneously improves the electric power density of each segmented target to 0.006KW/cm by changing the distribution of the target3～0.01KW/cm3To (c) to (d); the increase in electrical power density increases the yield of the plasma and increases the mean free path of the plasma. The aim of improving the deposition rate is fulfilled through the balanced matching of the two. The distribution parameters of the target material are reduced while the electric power density is improvedThe power consumption is reduced, and the uniformity of the plating layer of the plated workpiece (substrate) is also considered. If L1 is less than 2%, the electric power density of the single segmented target is too large, the heat conductivity of the rare earth target is low, high temperature is generated, the deformation of equipment components is caused, and even a vacuum sealing ring of the equipment is damaged; if L1 is greater than 15%, the power density on the single segmented target is too low to achieve the goal of increasing the plasma yield and increasing the deposition rate. L2 determines the space between the segmented targets, influences the size of the plasma intersection area between the adjacent segmented targets, and finally influences the deposition rate and the uniformity of the plated workpiece; if L2 is lower than 30% of L1, the overlapping proportion of the plasma intersection area between the adjacent segmented targets is too large, the coating of the coated workpiece below the intersection area is too thick, and if L2 is less than 20% of L1, the adjacent segmented targets are even plated with each other; if L2 is greater than 50% of L1%, the proportion of overlap between plasma intersection regions between adjacent segmented targets is too small, and the plated workpiece under the intersection regions is too thin, and even unplated regions occur. By reducing the magnetic field intensity, the function of restraining the electron motion by the magnetic field is ensured, and the magnetic field distribution is in a flat shape. Actually, the target made of rare earth metal belongs to a magnetic sensing material, so that, different from a target with magnetic isolation property, the magnetic field at the back of the target made of rare earth metal can realize the function of restricting electron movement through the target under lower strength, and when the magnetic field strength is lower, even if the magnetic field distribution is still high at two sides and low in the middle, the magnetic field distribution can be in a flat state, so that the residual proportion of the middle part of the target is reduced (see fig. 4), and the utilization rate of the target can be correspondingly increased.
Aiming at the material characteristics of the rare earth metal target, the invention reasonably and cooperatively matches the technological parameters of the magnetic field, the gas field and the electric field, has reasonable design, improves the utilization rate of the target, can ensure the realization of the rare earth film layer, and does not need to add a new complex flow; meanwhile, the deposition rate is greatly improved, the power consumption is greatly reduced, and the production cost is greatly reduced. Compared with the prior art, the deposition rate of the invention is improved by about 1.8-2 times, the power consumption is reduced by about 34%, the utilization rate of the target material is improved by about 22%, the cost in batch production can be greatly reduced, and the production efficiency is greatly improved.
Drawings
FIG. 1 is a schematic structural diagram of a cathode plate and a target thereon of a conventional rare earth permanent magnet vacuum coating device;
FIG. 2 is a schematic view of a target affected by a magnetic field distribution;
FIG. 3 is a schematic diagram of the existing rare earth permanent magnet vacuum coating equipment after the target material is etched;
FIG. 4 is a schematic diagram of the rare earth permanent magnet vacuum coating equipment after the target material is etched;
FIG. 5 is a schematic structural diagram of a cathode plate and a target thereon of the vacuum coating equipment for rare earth permanent magnets of the present invention.
Detailed Description
The vacuum coating equipment for the rare earth permanent magnet comprises a shell, a negative plate and a rare earth metal target arranged on the negative plate, wherein the back of the target is provided with a magnetic material; the target is formed by arranging a plurality of segmented targets at equal or unequal intervals, and is integrally in a strip cuboid shape, the length L1 of each segmented target is 2% -15% of the length L of the overall target (such as 2%, 3%, 4%, 5%, 6%, 7%, 8%, 8.5%, 9%, 10%, 11.3%, 12%, 13%, 14%, 15%), and the interval L2 between adjacent segmented targets is 30% -50% of the length L1 of the segmented target (such as 30%, 35%, 38%, 40%, 43%, 45%, 48%, 50%); the magnetic field intensity formed by the magnetic material arranged on the back of the target is 80 GS-180 GS (such as 80GS, 90 GS, 100 GS, 105 GS, 120 GS, 130 GS, 150 GS, 165 GS, 170 GS, 180 GS); when the vacuum coating device works, the shell is firstly vacuumized until the vacuum degree is lower than 0.03Pa so as to obtain the background vacuum before coating is started; after the background vacuum is reached, argon is filled into the shell, and the filling amount of the argon keeps the vacuum degree in the shell between 0.8Pa and 3Pa (such as 0.8Pa, 0.9 Pa, 1.0 Pa, 1.5 Pa, 2 Pa, 2.5 Pa and 3 Pa). Preferably, the length L1 of each segmented target is 6% -15% of the overall target length L. In specific implementation, the segmented target is rectangular or square, and the width of each segmented target is the same, so that the width of each segmented target is the width of the whole target, the thickness of each segmented target is consistent, and compared with the target on the existing equipment, the thickness of each segmented target is unchanged.
Claims (3)
1. A method for using rare earth permanent magnet vacuum coating equipment comprises a shell, a negative plate and a rare earth metal target arranged on the negative plate, wherein a magnetic material is arranged on the back of the target; the target is characterized in that the target is formed by arranging a plurality of segmented targets at equal intervals or unequal intervals, the whole target is in a strip cuboid shape, the length L1 of each segmented target is 2-15% of the length L of the whole target, and the interval L2 between every two adjacent segmented targets is 30-50% of the length L1 of each segmented target; the magnetic field intensity formed by the magnetic material arranged on the back of the target material is 80 GS-180 GS; when the vacuum coating device works, the shell is firstly vacuumized until the vacuum degree is lower than 0.03Pa so as to obtain the background vacuum before coating is started; after the background vacuum is reached, argon is filled into the shell, and the filling amount of the argon keeps the vacuum degree in the shell between 0.8Pa and 3 Pa.
2. The use method of the rare earth permanent magnet vacuum coating apparatus according to claim 1, wherein the segmented targets are rectangular or square and the widths of the segmented targets are the same.
3. The use method of the rare-earth permanent magnet vacuum coating apparatus according to claim 1 or 2, wherein the length L1 of each segmented target is 6% -15% of the overall target length L.
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| CN201911365622.3A CN110965036B (en) | 2019-12-26 | 2019-12-26 | Rare earth permanent magnet surface vacuum coating equipment |
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| CN201911365622.3A CN110965036B (en) | 2019-12-26 | 2019-12-26 | Rare earth permanent magnet surface vacuum coating equipment |
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| CN114990511B (en) * | 2022-08-04 | 2022-10-25 | 等离子体装备科技(广州)有限公司 | Coating method of small-size magnetic material workpiece and vacuum coating monomer machine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
| JP2008184640A (en) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | Cylindrical sputtering target and method of manufacturing the same |
| CN101457345A (en) * | 2009-01-09 | 2009-06-17 | 沈阳化工学院 | Plane sputtering target spliced by simple metal |
| CN209836293U (en) * | 2019-04-17 | 2019-12-24 | 合肥科赛德真空技术有限公司 | High-efficiency magnetron sputtering planar cathode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130270104A1 (en) * | 2012-04-11 | 2013-10-17 | Intermolecular, Inc. | Combinatorial processing using mosaic sputtering targets |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
| JP2008184640A (en) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | Cylindrical sputtering target and method of manufacturing the same |
| CN101457345A (en) * | 2009-01-09 | 2009-06-17 | 沈阳化工学院 | Plane sputtering target spliced by simple metal |
| CN209836293U (en) * | 2019-04-17 | 2019-12-24 | 合肥科赛德真空技术有限公司 | High-efficiency magnetron sputtering planar cathode |
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Address after: 110172 No. 599 Tongcheng Road, Shenfu demonstration zone, Shenyang, Liaoning Patentee after: Shenyang Guangtai Vacuum Technology Co.,Ltd. Address before: 110172 No. 599 Tongcheng Road, Dongling District, Shenyang City, Liaoning Province Patentee before: SHENYANG GUANGTAI VACUUM TECHNOLOGY Co.,Ltd. |