JP2008184640A - Cylindrical sputtering target and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inexpensive cylindrical sputtering target and a method of manufacturing the same, the target and the method causing no cracks nor peeling in target material even when used in sputtering using a large power and capable of being applied for targets composed of various materials unlike thermal spray method or HIP method. <P>SOLUTION: The cylindrical sputtering target can be obtained by joining a plurality of cylindrical target materials comprising cylindrical ceramic sintered compacts onto the outside surface of a cylindrical base material, wherein a prescribed gap is provided at each joining part between the cylindrical target materials. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a cylindrical sputtering target used in a magnetron rotating cathode sputtering apparatus and a method for manufacturing the same.

  The magnetron type rotary cathode sputtering apparatus has attracted attention because of its high film formation rate and remarkably high target usage efficiency compared to the flat plate type magnetron sputtering apparatus.

  The magnetron type rotary cathode sputtering apparatus has a magnetic field generator inside a cylindrical sputtering target, and performs sputtering while cooling from the inside of the target and rotating the target. For this reason, since the entire surface of the cylindrical target material is eroded and uniformly cut, the target usage efficiency (60% or more) is significantly higher than the usage efficiency (20 to 30%) of the conventional flat-plate magnetron sputtering apparatus. It is done. Furthermore, since the cooling efficiency is improved, a larger power can be supplied per unit area than in a conventional flat plate type magnetron sputtering apparatus, and a high film formation rate can be obtained (for example, see Patent Document 1). Such a target used in the rotary cathode sputtering apparatus has a cylindrical shape. For this reason, a manufacturing technique completely different from the conventional flat type sputtering target is required.

  As a method for producing a cylindrical sputtering target, for example, a method is known in which a cylindrical target material is formed on the outer peripheral surface of a cylindrical substrate by a thermal spraying method (see, for example, Patent Document 2). Furthermore, after roughening the outer surface of the cylindrical base material, a method is known in which powder is filled on the outer periphery and a cylindrical target material is formed by hot isostatic pressing (HIP) (see, for example, Patent Document 3). ). Since the cylindrical target by thermal spraying method is made by integrating the cylindrical base material and the cylindrical target material, there is no need for a bonding step to join the cylindrical target material and the cylindrical base material. Cannot be reused, raising the problem of increasing running costs. In addition, the cylindrical target by the HIP method is a method in which the outer periphery of the cylindrical substrate is filled with powder, and the target material is directly formed on the outer periphery of the cylindrical substrate by HIP. It has a problem that it is not economical due to a problem, a large initial cost, and a running cost.

  Furthermore, in the future, for flat panel display applications, targets corresponding to glass substrates of the seventh to eighth generation sizes will become mainstream. In this case, the length of the cylindrical sputtering target is 2.5-3. 0 m, and the amount of thermal expansion in the length direction of the cylindrical target material and the cylindrical base material becomes very large. For this reason, there is a possibility that the cylindrical target material is cracked due to thermal expansion in an integrated cylindrical sputtering target without a divided portion produced by a thermal spraying method or an HIP method. Development of a cylindrical target is desired.

  On the other hand, ceramic materials used in flat-type targets can produce high-density and high-quality sintered bodies, so the production of targets by the sintering method is common. When producing a target material from a ceramic sintered body, a bonding technique between the ceramic sintered body and the substrate is indispensable. Since the bonding of the flat sputtering target was a simple method of bonding to a flat substrate, even when manufacturing a large flat target, it can be easily manufactured by bonding a plurality of target materials. it can. However, in the case of a cylindrical sputtering target, a complicated bonding technique is required due to its shape. In particular, in a multi-part cylindrical target material, there are many special elements and bonding is difficult.

  As a method for bonding multi-divided cylindrical target materials, in Patent Document 4, a method of fixing the cylindrical target material with a stopper provided on the cylindrical base material, and in Patent Document 5, a cylindrical target material and a cylindrical base material are bonded. A method of fixing with carbon felt is known. In these methods, the cylindrical target material is fixed but not joined. For this reason, even when the cylindrical target materials collide with each other due to thermal expansion of the cylindrical target material during sputtering, the cylindrical target material can freely move, so that the stress can be absorbed. It is possible to suppress cracking.

  However, in the method of fixing the cylindrical target material with the stopper shown in Patent Document 4, since the backing layer is non-thermally conductive, the cooling efficiency is poor and high power cannot be input. Furthermore, the method of fixing with the carbon felt disclosed in Patent Document 5 cannot provide high power because the carbon felt is excellent in heat insulation and the cooling efficiency is poor. Further, Patent Document 6 discloses a fixing method using a carbon sheet for improving this problem, but this method is insufficient in terms of heat conduction. The “joining” in the present invention is a state in which the cylindrical target material and the cylindrical base material are completely bonded, and is a method of joining with, for example, a low melting point solder material or a cured resin. “Fixing” refers to a state in which the cylindrical target material and the cylindrical base material do not move in a normal state but are not bonded, and examples thereof include a method of fixing with a felt or a sheet.

  On the other hand, as a joining method using a low-melting-point solder material, Patent Document 7 discloses that one of the cylindrical base materials is sealed with a metal disk and a heat-resistant tape, and the molten low-melting-point solder material is a cylindrical target material. In addition, there is described an insertion joining method in which a molten state is formed and a cylindrical base material is inserted into a cylindrical target material. In this method, a plurality of cylindrical target materials are connected with a heat-resistant tape to be inserted into and joined to a cylindrical base material in a state where it is a single cylindrical target. . For this reason, there is a possibility that the cylindrical target materials collide with each other due to thermal expansion of the cylindrical target material during sputtering, and cracks may occur.

  Moreover, the heat resistant tape used at the time of joining remains on the back surface of the cylindrical target material. For this reason, there is a possibility that the heat conduction is locally lowered, the target may be broken, and the heat-resistant tape is insulative, which causes abnormal discharge. In this joining method, after joining with a low-melting-point solder material, a cylindrical target material, a metal disk sealing one of the opening ends of the cylindrical base material, a processing operation after joining the low-melting-point solder material, etc. However, it is not economical because a low-melting-point solder material more than the filling amount is required in addition to the possibility of damage to the cylindrical target material during the processing operation.

JP-T 58-500194 JP 05-86462 A Japanese Patent Laid-Open No. 05-230645 JP 2006-104570 A JP 2002-155356 A JP 2006-138006 A Japanese Patent Application Laid-Open No. 08-60351

  An object of the present invention is to provide a sputtering target in which cracks and cracks do not occur during sputtering in a multi-part cylindrical target composed of a plurality of cylindrical ceramic sintered bodies, and a method for manufacturing the same.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have determined that cylindrical sputtering is formed by joining a plurality of cylindrical target materials made of a sintered ceramic body on the outer surface of a cylindrical base material. In the target, the cylindrical base material and the cylindrical target material are joined using a joining material such as a low-melting-point solder material, and the cylindrical target materials are joined with a gap therebetween. The inventors have found that cracking and cracking during sputtering can be prevented, and have completed the present invention.

  That is, the cylindrical sputtering target of the present invention has a plurality of cylindrical target materials made of a cylindrical ceramic sintered body arranged in the central axis direction, and a cylindrical ceramic sintered body that is the cylindrical target material. The cylindrical sputtering target is characterized in that they are continuous in the central axis direction with a predetermined interval.

  In the present invention, the bonding material is preferably a low melting point solder material mainly composed of indium or a conductive resin. The cylindrical base material is desirably Cu, Ti, Al, Mo, an alloy containing at least one of these metals, or a cylindrical base material made of SUS. The cylindrical ceramic sintered body is preferably an oxide containing at least one of In, Sn, Zn, Al, Ta, Nb, and Ti as a main component.

  In the first aspect of the method for producing a cylindrical sputtering target of the present invention, a cylindrical base material is inserted inside the cylindrical target material so that the central axes of the cylindrical target material and the cylindrical base material coincide with each other. Next, one opening end of the clearance formed by the inner side surface of the cylindrical target material and the outer side surface of the cylindrical base material is sealed, and the sealing end is held downward to melt. A manufacturing method of a cylindrical sputtering target characterized in that the bonding material having fluidity such as In solder is poured from above the clearance to fill the clearance with the bonding material and then solidify the filled bonding material. Is the method.

  It should be noted that a spacer having a thickness smaller than the clearance thickness is provided in the clearance, and / or a wedge is inserted to align the cylindrical target material with the central axis of the cylindrical base material, and then join The material is preferably filled and solidified.

  Further, the material of the spacer and wedge used here is preferably a metal or a resin having a melting point equal to or higher than the bonding process temperature. Examples thereof include metals such as SUS and copper and heat resistant resins such as Teflon (registered trademark).

  Furthermore, a second aspect of the method for manufacturing a cylindrical sputtering target of the present invention is a method for manufacturing a cylindrical sputtering target by bonding a plurality of cylindrical target materials to a single cylindrical substrate with a bonding material. The plurality of cylindrical target materials are stacked in an axial direction through a sealing material, and sealed so as to maintain an airtightness to the extent that a flowable bonding material does not leak from a connecting portion between the cylindrical target materials. An assembly composed of the obtained laminate and the cylindrical base material arranged so that the central axes of the laminate coincide with each other on the inner side of the laminate, and the inner surface of the laminate and the cylinder After sealing one open end of the clearance formed by the outer side surface of the shaped substrate, the sealing end is held downward, and a bonding material having fluidity such as molten In solder is added to the clearance. Top By pouring, filling a bonding material into said clearance, then, is a method for manufacturing a cylindrical sputtering target, characterized in that to solidify the filled bonding material.

  Hereinafter, the present invention will be described in detail.

  In the cylindrical sputtering target of the present invention, a plurality of cylindrical target materials and a cylindrical base material are bonded by a bonding material, and the cylindrical target material is bonded at intervals, so that at the time of sputtering It is possible to prevent the cracking of the cylindrical target material due to the collision between the cylindrical target materials due to thermal expansion. When the interval between the cylindrical target materials is narrow, the cylindrical target materials collide with each other due to thermal expansion accompanying the temperature rise of the target surface due to plasma during sputtering, and cracks. The interval between the cylindrical target materials can be appropriately designed from the length of the target material and the coefficient of thermal expansion as appropriate, but is preferably 0.1 mm or more. In addition, since the bonding material may be sputtered when the interval is large, the interval between the target materials is determined based on the average free path of the sputtering gas used and the target usage efficiency. It can be determined to a value that is not sputtered.

  As the bonding material in the present invention, it is preferable to use a low melting point solder material or a conductive resin. The low melting point solder material preferably contains indium as a main component (80 wt% or more). Indium-based solder has a good track record with flat-type targets, and indium is highly malleable, so it alleviates distortions such as thermal expansion between the target material heated during sputtering and the cooled substrate. effective. Specific examples include In and InSn alloys. Further, as the conductive resin, a cured resin containing Ag or carbon filler can be used.

  In addition, when a cylindrical target material and a cylindrical base material are joined with a low melting point solder material, the target material and the cylindrical base material can be easily peeled off by heating the used target to the temperature of the low melting point solder material. It is economically advantageous that the cylindrical base material can be reused and the target material can be recycled.

Moreover, the cylindrical target material used for this invention can be made into the oxide which has at least 1 type of In, Sn, Zn, Al, Nb, Ti as a main component, for example. Here, the oxide containing a specific element as a main component is an oxide containing 80 wt% or more of the element in terms of oxide. Specifically, for example, there are ITO (Indium Tin Oxide), AZO (Allinium Zinc Oxide), IZO (Indium Zinc Oxide), SnO ₂ , In ₂ O ₃ , Al ₂ O ₃ , TiO ₂ , ZnO and the like.

  In the present invention, the material of the cylindrical base material is not limited, and the cylindrical base material is Cu, Ti, Al, Mo, an alloy containing at least one of those metals, or a cylindrical base made of SUS. Materials can also be used.

  Next, the manufacturing method of the cylindrical sputtering target of this invention is shown.

  FIG. 1 shows an example of a cylindrical sputtering target of the present invention in which three cylindrical target materials are bonded to one cylindrical base material as a schematic cross-sectional view cut along a plane including the central axis. is there. In FIG. 1, reference numeral 1 denotes three cylindrical target materials, 2 denotes a cylindrical base material, 5 denotes a bonding layer for bonding them, and a connecting portion between the three cylindrical target materials 1 has a predetermined width. The gap 8 is provided.

  The cylindrical target material 1 and the cylindrical base material 2 are preferably subjected to a treatment of wetting their bonding surfaces with the bonding material. By doing in this way, the wettability of a joining material improves and it becomes easy to fill a joining material. Further, in order to make the cylindrical base material 2 coincide with the central axis of the cylindrical target material 1 and the cylindrical base material 2, as shown in FIG. 2, the inner surface of the cylindrical target material and the cylindrical base material It is preferable to provide a plurality of spacers 3 that are thinner than the thickness of the clearance formed by the outer surface of the spacer. Note that the central axes of the cylindrical target material 1 and the cylindrical base material 2 can be matched by inserting a plurality of wedges above the clearance. Moreover, in order to make these center axes correspond, both a spacer and a wedge may be used in combination. At this time, in order to achieve both centering accuracy and workability, the thickness of the spacer 3 is preferably about 80% of the clearance thickness. By doing so, a clearance having a thickness of 0.1 mm or more and 2.0 mm or less can be uniformly formed between the outer surface of the cylindrical base material 2 and the inner surface of the cylindrical target material 1. As a result, uneven distortion due to thermal expansion or the like when using the cylindrical sputtering target is effectively relieved, and cracks and cracks are prevented from occurring.

  FIG. 3 shows a case where five cylindrical target materials are used. As shown in FIG. 3 as a schematic cross-sectional view cut along a plane including the central axis as in FIG. The material 2 is used as a core, stacked in the axial direction via the sealing material 4, sealed and laminated so as to maintain the airtightness so that the fluid joining material does not leak from the connecting portion between the cylindrical target materials. Create a body. Next, this laminated body is fixed to a predetermined place where the cylindrical base material 2 is to be joined by, for example, a heat-resistant O-ring 6. The heat-resistant O-ring also serves to seal the open end below the clearance as will be described later. Here, as the sealing material 4, a heat-resistant O-ring or an annular plate material whose planar shape is substantially the same as a cross-sectional shape in a plane perpendicular to the central axis of a cylindrical target material, for example. It is possible to use a metal sheet or a heat-resistant / reactive resin sheet such as Teflon (registered trademark). In consideration of removing the sandwiched sealing material 4, a Teflon (registered trademark) sheet with low frictional resistance is preferable. Further, the opening end below the clearance formed between the inner surface of the cylindrical target material 1 and the outer surface of the cylindrical base material 2 is sealed with, for example, the heat-resistant O-ring 6 described above. Stop. Further, the side surface of the cylindrical target material 1 in contact with the sealing material 4 is preferably provided with surface accuracy using a lathe or the like in order to obtain sufficient airtightness, and the end surface is used for preventing chipping during work. It is preferable to chamfer.

  Next, when a low-melting-point solder material is used as the bonding material, the whole of the laminated body of the cylindrical target material 1 and the cylindrical base material 2 is shown in FIG. For example, the support stand 7 is used and held in a state where the central axis is vertical. Thereafter, the whole is heated to a temperature equal to or higher than the melting point of the low-melting-point solder material to be used (for example, 156.6 ° C. in the case of indium), and the low-melting-point solder material melted from above is poured into the clearance. . At this time, it is preferable to apply vibration to the cylindrical target material in order to densely fill the low melting point solder material. Further, a low melting point solder material is poured, and then solidified to form the bonding layer 5. Thereafter, the desired cylindrical sputtering target is obtained by removing the heat-resistant O-ring 6, the sealing material 4, masking, and the like that sealed the lower end of the clearance.

  When the bonding material is a conductive resin, the conductive resin is poured into the clearance between the cylindrical target material 1 and the cylindrical base material 2 by the same method as in the case of the low melting point solder material. Furthermore, a desired cylindrical sputtering target can be obtained by solidifying the conductive resin and removing the O-ring 6, the sealing material 4, the masking, etc. that have sealed the clearance.

  Examples of the conductive resin used here include a resin such as epoxy, acrylic, polyester, urethane, phenol, and the like using Ag, C, Cu, or the like as a filler.

  When the bonding material is a thermosetting conductive resin, the clearance is filled with the thermosetting conductive resin, and then heated to a curing temperature and solidified.

  Thus, it becomes possible to obtain a cylindrical sputtering target of a desired size by combining a plurality of cylindrical target materials.

  According to the present invention as described above, unlike the thermal spraying method and the HIP method, a low-cost cylindrical sputtering target that can be applied to any target material can be obtained. In addition, since the cylindrical sputtering target of the present invention is arranged with an interval between the cylindrical target materials, even when the cylindrical target material thermally expands during sputtering, the cylindrical target materials collide with each other. It becomes possible to suppress the cracking due to. Further, the bonding layer becomes a buffer, and peeling does not occur even when the expansion and contraction are repeated.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

(Example 1)
Five cylindrical ITO target materials (outer diameter: 150.0 mmφ, inner diameter: 131.0 mmφ, length: 200 mm) are prepared, and the surfaces other than the joining surface of each cylindrical ITO target material are masked with heat-resistant tape and joined. In solder was primed on the surface with an ultrasonic soldering iron. On the other hand, one SUS cylindrical base material (outer diameter: 130.0 mmφ, inner diameter: 120.0 mmφ, length 1300 mm) is prepared, and heat resistant to prevent the bonding material from adhering to surfaces other than the bonding surface. Was masked with a conductive tape, and In solder was coated on the joint surface with an ultrasonic soldering iron. Further, six copper wires 3 (0.40 mmφ) are arranged on the outer surface of the cylindrical base material 2 in parallel with the central axis and as shown in FIG. Were fixed so that they were arranged at equal intervals in the circumferential direction. Let the cylindrical base material thus produced be an assembly A (FIG. 2).

  Further, as shown in FIG. 3, a heat-resistant O-ring 6 for sealing was provided on the lower part of the cylindrical base material 2 of this assembly A, and then held vertically by using a support base 7. Cylindrical ITO target material 1 processed as described above, and an annular Teflon (registered trademark) sheet (outer diameter: 150.0 mmφ, inner diameter: 131.0 mmφ, 0) as the sealing material 4 for the connection portion between the target materials .4 mmt) are alternately fitted around the outer periphery of the assembly A, so that five cylindrical ITO target materials 1 are stacked with the annular sheet interposed therebetween, and the cylindrical target materials are connected to each other. An assembly B was prepared by sealing so as to maintain airtightness so that the bonding material having fluidity does not leak from the part. The heat-resistant O-ring 6 provided in the lower part of the cylindrical base material 2 has an opening end below the clearance formed between the outer side surface of the cylindrical base material 2 and the inner side surface of the cylindrical target material 1. It is what is sealed. In this state, the cylindrical ITO target material 1 and the assembly A were fixed to the support base 7 so that the center axes thereof coincide. The entire assembly A and the cylindrical ITO target material thus formed are referred to as an assembly B (FIG. 3).

  Next, wrap a ribbon heater around the assembly B and heat it to 180 ° C. Then, while applying vibration to these, infuse the molten In solder from the top of the clearance and confirm that the In solder has reached the top of the clearance. After cooling. Further, after confirming that the In solder was completely solidified, a heat resistant tape, a heat resistant O-ring, an annular Teflon (registered trademark) sheet, and the like were removed to produce a cylindrical ITO sputtering target. The obtained cylindrical sputtering target had an interval between target materials: 0.38 to 0.39 mm, and the eccentricity of the target material and the substrate was 0.08 mm. The eccentricity is a difference between the maximum thickness and the minimum thickness when the thicknesses of the target material and the substrate including the thickness of the bonding layer are measured.

  The cylindrical target thus obtained was subjected to a 48-hour continuous discharge test. The discharge was stopped halfway (after 3 hours and 24 hours), and the state of the target was confirmed. However, no cracks or cracks were observed on the target.

(Example 2)
The size of the cylindrical ITO target material was changed to an outer diameter: 150.0 mmφ, an inner diameter: 131.0 mmφ, and a length: 100 mmt, and 10 of them were used as a sealing material 4 for a connection portion between target materials. A cylindrical ITO sputtering target was produced in the same manner as in Example 1 except that the thickness of the annular Teflon (registered trademark) sheet was 0.2 mm.

  The obtained cylindrical target had an interval between target materials: 0.19 to 0.20 mm, and the eccentricity between the target material and the base material was 0.07 mm. The cylindrical sputtering target thus obtained was subjected to a continuous discharge test in the same manner as in Example 1. However, no cracks or cracks were observed in the target even after 48 hours of discharge.

(Example 3)
A cylindrical ITO sputtering target was produced in the same manner as in Example 1 except that the thickness of the annular Teflon (registered trademark) sheet inserted between the cylindrical ITO target materials was 0.11 mm.

  The obtained cylindrical target had an interval between the target materials: 0.10 to 0.11 mm, and the eccentricity of the target material and the base material was 0.07 mm. The cylindrical sputtering target thus obtained was subjected to a continuous discharge test in the same manner as in Example 1. However, no cracks or cracks were observed in the target even after 48 hours of discharge.

Example 4
A cylindrical ITO sputtering target was produced in the same manner as in Example 1 except that the thickness of the annular Teflon (registered trademark) sheet inserted between the cylindrical ITO target materials was 1.0 mm.

  The obtained cylindrical target had an interval between the target materials: 0.96 to 0.98 mm, and the eccentricity of the target material and the base material was 0.08 mm. The cylindrical sputtering target thus obtained was subjected to a continuous discharge test in the same manner as in Example 1. However, no cracks or cracks were observed in the target even after 48 hours of discharge.

(Example 5)
A cylindrical IZO sputtering target was produced in the same manner as in Example 1 except that five cylindrical IZO target materials (outer diameter: 150.0 mmφ, inner diameter: 131.0 mmφ, length: 200 mm) were used.

  The obtained cylindrical target had an interval between target materials: 0.38 to 0.39 mm, and the eccentricity of the target material and the base material was 0.06 mm. The cylindrical sputtering target thus obtained was subjected to a continuous discharge test in the same manner as in Example 1. However, no cracks or cracks were observed in the target even after 48 hours of discharge.

(Example 6)
A cylindrical AZO sputtering target was produced in the same manner as in Example 1 except that five cylindrical AZO target materials (outer diameter: 150.0 mmφ, inner diameter: 131.0 mmφ, length: 200 mm) were used.

  The obtained cylindrical target had an interval between target materials: 0.38 to 0.39 mm, and the eccentricity of the target material and the base material was 0.07 mm. The cylindrical sputtering target thus obtained was subjected to a continuous discharge test in the same manner as in Example 1. However, no cracks or cracks were observed in the target even after 48 hours of discharge.

(Comparative Example 1)
Five cylindrical ITO target materials (outer diameter: 150.0 mmφ, inner diameter: 131.0 mmφ, length: 200 mm) were prepared in the same manner as in Example 1, and an assembly A was produced in the same manner as in Example 1. .

  As shown in FIG. 4, an assembly A is set up vertically and five cylindrical ITO target materials 1 are stacked without interposing a sealing material so that the central axes of the assembly A coincide with each other. Fixed to the support base 7. Further, the open end below the clearance formed between the outer side surface of the cylindrical base material 2 and the inner side surface of the cylindrical target material 1 was sealed with a heat-resistant O-ring 6. The whole of the SUS cylindrical base material and the cylindrical ITO target material thus produced is referred to as an assembly C (FIG. 4).

  Next, the assembly C was heated by the same method as in Example 1, and then molten In solder was poured into the cylindrical ITO sputtering target. In the obtained cylindrical target, a filler gauge of 0.01 mmt did not enter the connecting portion between the cylindrical target materials 1, and the eccentricity of the target material and the base material was 0.08 mm.

  The cylindrical sputtering target thus obtained was subjected to the same continuous discharge test as in Example 1, and after 3 hours of discharge, the discharge was stopped and the state of the target was confirmed. It has occurred.

It is a figure which shows an example of the cylindrical target of this invention as typical sectional drawing cut | disconnected by the surface containing a central axis. It is a figure which shows an example of the assembly A of this invention as a typical sectional view cut | disconnected by the surface containing a central axis. It is a figure which shows an example of the assembly B of this invention as a typical sectional view cut | disconnected by the surface containing a central axis. It is a figure which shows as a typical sectional view which cut | disconnected the assembly C produced as a comparative example by the surface containing a central axis.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cylindrical target material 2 Cylindrical base material 3 Spacer 4 Sealing material 5 Joining layer 6 Heat-resistant O-ring 7 Support stand 8 Gap

Claims (5)

In a cylindrical sputtering target formed by joining a plurality of cylindrical target materials made of a sintered ceramic body of a cylindrical shape to the outer surface of a cylindrical base material, the cylindrical base material and the cylindrical target material are joined using the joining material. The cylindrical sputtering target is characterized in that the cylindrical target materials are joined to each other with a gap therebetween. The cylindrical sputtering target according to claim 1, wherein an interval between the cylindrical target materials is 0.1 mm or more. In a method of manufacturing a cylindrical sputtering target by bonding a cylindrical target material and a cylindrical base material with a bonding material, the central axes of the cylindrical base material and the center axes of the cylindrical base material and the cylindrical target material coincide with each other. Next, one opening end of the clearance formed by the inner surface of the cylindrical target material and the outer surface of the cylindrical base material is sealed, and the sealing end is held downward. Then, by flowing a bonding material having fluidity from above the clearance, the bonding material is filled into the clearance, and then the filled bonding material is solidified. 4. A cylindrical sputtering target according to claim 3, wherein the central axis of the cylindrical target material and the cylindrical base material are made to coincide by inserting a plurality of spacers and / or wedges into the clearance. Method. A method of manufacturing a cylindrical sputtering target by bonding a plurality of cylindrical target materials to a single cylindrical substrate with a bonding material, wherein the plurality of cylindrical target materials are stacked in an axial direction via a sealing material , A laminate obtained by sealing so as to maintain a hermeticity so that a fluid joining material does not leak from the connection portion between the cylindrical target materials, and the central axis of both is provided inside the laminate. An assembly composed of the cylindrical base materials arranged so as to coincide is manufactured, and one open end of the clearance formed by the inner side surface of the laminate and the outer side surface of the cylindrical base material is sealed After that, the sealing end is held down and a bonding material having fluidity is poured from above the clearance to fill the clearance with the bonding material and then solidify the filled bonding material. Cylindrical sputtering target manufacturing method according to claim.

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