CN116732478A - Bonding method for assembled tubular target structure - Google Patents
Bonding method for assembled tubular target structure Download PDFInfo
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- CN116732478A CN116732478A CN202310575210.2A CN202310575210A CN116732478A CN 116732478 A CN116732478 A CN 116732478A CN 202310575210 A CN202310575210 A CN 202310575210A CN 116732478 A CN116732478 A CN 116732478A
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- bonding
- target
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- indium
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Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910052738 indium Inorganic materials 0.000 claims abstract description 36
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 claims abstract description 20
- 230000001070 adhesive effect Effects 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims 2
- 210000001161 mammalian embryo Anatomy 0.000 claims 1
- 239000013077 target material Substances 0.000 abstract description 17
- 238000004026 adhesive bonding Methods 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 22
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of target bonding, in particular to an assembly type tubular target structure bonding method, which comprises the following steps: s1, dividing a metal back pipe into fixed lengths; s2, quick connection structures are arranged at two ends of each section of back pipe; s3, independently bonding each section of target tube and each section of back tube; s4, sealing the end face of a fit gap between the inner hole of the target tube and the back tube by using high-temperature-resistant bonding adhesive at one end, filling indium solution into the fit gap after the bonding adhesive is solidified, and cooling to form a bonding layer; s5, sealing the other end of the fit gap by using bonding glue, and solving the problems that the bonding operation of the target material indium is inconvenient, the bonding layer of the indium bonding target material can be heated and melted in the using process, and the heat conduction of the bonding layer of the organic glue bonding target material is poor.
Description
Technical Field
The invention relates to the technical field of target bonding, in particular to an assembly type tubular target structure bonding method.
Background
At present, the tubular target materials used in industry are composed of a metal back tube and a tubular target tube. The target tube is bonded on the metal back tube by metal or special organic adhesive for sputtering. The metal back pipe is a whole (the longest is about 4000 mm), no seam or welding seam exists, and the two ends of the back pipe are processed to have special structures and shapes, so that the back pipe is convenient to install on coating equipment; the length of a single section of the tubular target tube is generally 100-600 mm, several sections or even more than ten sections of tubular target tubes are fixed on an integral back tube through bonding layers, and a seam of 0.3-0.5mm is reserved between two adjacent sections of target tubes. Two bonding modes can be adopted according to the use environment of the tubular target. One is the low power use of tubular targets (sputter power < 8 kw/m). The tubular target is less hot than high power use, the highest instantaneous thermal temperature is much less than high power sputtering, the low power sputtering uses transition layer materials: low melting point soft metal indium or indium tin alloy. The other is the high power use of tubular targets (sputtering power > 15 kw/m). Because the tubular target material is subjected to a large amount of thermal shock when the power sputtering is high in use, the highest instantaneous thermal temperature of the surface of the target material exceeds 300 ℃, and heat is transferred to cooling water through the target material, the bonding layer and the back pipe. The bonding layer is required to be infusible at such high temperatures and to be electrically and thermally conductive. The bonding layer materials used for the high-power sputtering are as follows: bonding special conductive adhesive + graphite (C) +copper (Cu)/aluminum (Al) mesh or wire/SUS 304 stainless steel mesh or wire; at present, when a bonding layer is selected by a tubular target manufacturing enterprise or a tubular target bonding enterprise, bonding glue and copper (Cu)/SUS 304/aluminum are used, or low-melting-point metal indium is used. However, since the metal indium has a melting point of 156 degrees celsius and the bonding adhesive has a thermal conductivity of less than 2W/(m.k), there is a risk of melting the bonding layer or cracking the target during high power sputtering.
The existing tubular target structure and bonding technology have the following problems:
1. because the target back pipe is a whole metal pipe and cannot be split, if one section of the target pipe is damaged in use, the whole target cannot be used continuously, and huge waste is caused.
2. The bonding layer is easy to melt and flow out when the bonding layer is subjected to high-power sputtering, so that the target tube is separated from the back tube, and the target cannot be used continuously.
3. When the bonding is performed by using the organic conductive adhesive, although the bonding layer cannot be melted during high-power sputtering, the thermal conductivity of the bonding layer is too poor (less than 2W/(m.K)), and the target tube is easy to crack (especially the oxide ceramic target tube) when being subjected to high-temperature impact and cannot be normally used.
Disclosure of Invention
In view of the shortcomings of the background technology, the invention provides an assembly type tubular target structure bonding method, which aims to solve the problems that the replacement cost is high after the target is in use, the indium bonding is easy to melt during high-power sputtering, the target is cracked due to poor heat conduction of a glue bonding layer, and the like. And the back pipe can be reused, thereby being beneficial to reducing the production cost.
The invention relates to a bonding method of an assembled tubular target structure, which comprises the following steps:
s1, dividing a metal back pipe into fixed lengths;
s2, quick connection structures are arranged at two ends of each section of back pipe;
s3, independently bonding each section of target tube and each section of back tube;
s4, sealing a fit gap between an inner hole of the target tube and the back tube by using high-temperature-resistant bonding adhesive at one end, and filling an adhesive into the fit gap after the bonding adhesive is solidified to form a bonding layer;
s5, sealing the other end of the fit gap by using bonding glue.
Further, the adhesive in the step S4 may be a metallic indium liquid or an organic adhesive.
Furthermore, the quick connection structure in the step S2 is that one end of each section of back pipe is provided with external threads, and the other end of each section of back pipe is provided with internal threads.
Further, the fit clearance between the target tube and the back tube is 1mm.
Further, the spacing between the ends of adjacent target blanks is 0.3mm-0.5mm.
The invention has the main beneficial effects that:
1. when the target is longer, the target is damaged, and only one damaged target is needed to be replaced, so that the cost is saved;
2. when the target is longer, the back tube is required to be vertically placed in an upright tubular heating furnace for preheating (the temperature is higher than 156 ℃), each section of target is required to be bonded, the target tube is required to be sleeved on the back tube from the upper end of the back tube and is lowered to the lower end of the back tube, after the position is fixed, the fit gap between the lower end of the section of target tube and the back tube is sealed, finally, indium solution is filled in the fit gap at the upper end of the section of target tube, the temperature of the back tube and the target tube is always higher than the melting point temperature of indium in the operation process, and otherwise, the indium is easy to solidify. And repeating the steps to complete bonding of the whole target. The metal indium solution is poured into a very small fit clearance (generally 1 mm), meanwhile, the metal indium solution is sealed and does not flow out from the lower end, and after the indium solution is solidified, the sealing material is taken out from the seam (0.3-0.5 mm) of two adjacent target tubes, so that the operation difficulty is great. The invention adopts the sectional bonding, and is assembled after the bonding is completed, thereby meeting the requirements of length and structure, improving convenience and improving production efficiency;
3. the end of the fit gap between the target blank and the back tube is sealed by glue, and the middle part is filled with indium for bonding, so that even if the indium bonding layer is heated and melted in the sputtering process, the indium bonding layer cannot flow out, and the problems that the current indium bonding target cannot bear high-power sputtering and the glue bonding target is poor in electric conductivity and thermal conductivity are solved.
4. After the service life of the target material is finished, the back tube can be reused, and the production cost of the target material is reduced.
Drawings
FIG. 1 is a schematic view of the structure of a tip target tube according to example 1 of the present invention.
Detailed Description
It is apparent that what is described herein is only a part, but not all, of the examples of the present invention, and that all other embodiments, which can be obtained by those skilled in the art without making any inventive effort, are within the scope of the present invention.
In order to facilitate an understanding of embodiments of the present invention, a further explanation will be made below by taking specific embodiments as examples, and the respective embodiments do not constitute a limitation of the embodiments of the present invention.
The embodiment 1 of the invention relates to a bonding method of an assembled tubular target structure. As shown in figure 1, the length of the backing tube 3191+/-1 mm of the tubular target material, the total length of the target tube 3151+0/-2mm, and the head band phi 160/152-L152mm of the target tube are in a dog-bone structure.
The method comprises the following steps:
s1, dividing a metal back pipe into fixed lengths, namely two end back pipes, wherein the lengths are 170mm, and the lengths of the middle 5 sections are 570.2mm (the lengths are effective lengths and do not contain overlapping lengths at the splicing part); the outer diameters of the two end target tubes and the contact end of the middle target tube are the same;
s2, quick connection structures are arranged at two ends of each section of back pipe;
s3, independently bonding each section of target tube and each section of back tube;
s4, sealing a fit gap between an inner hole of the target tube and the back tube by using high-temperature-resistant bonding adhesive at one end, and filling an adhesive into the fit gap after the bonding adhesive is solidified to form a bonding layer;
s5, sealing the other end of the fit gap by using bonding glue.
Wherein the adhesive in the step S4 can be indium metal liquid or organic adhesive.
The quick connection structure in the step S2 is that one end of each section of back pipe is provided with external threads, the other end of each section of back pipe is provided with internal threads, and the two sections of back pipes can be sealed and locked after being in butt joint.
The gap between the target tube and the back tube is 1mm.
The spacing between the ends of the adjacent target tubes is 0.3mm-0.5mm.
The invention has the main beneficial effects that:
1. when the target is longer, a certain part of the target is damaged, only a damaged target is needed to be replaced, and the cost is saved;
2. when the target is longer, the metal indium solution needs to be poured into a very small gap (generally 1 mm) in the bonding process, the metal indium solution is completely sealed in a seam of 0.3-0.5mm and does not flow outwards, meanwhile, the sealant is taken out after the indium solution is solidified, the operation difficulty is very high, and the metal indium solution is assembled after the bonding is finished by adopting the sectional bonding, so that the length requirement is met, the convenience is improved, and meanwhile, the production efficiency is improved;
3. the end of the fit gap between the target blank and the back tube is sealed by glue, and the middle part is filled with indium for bonding, so that even if the indium bonding layer is heated and melted in the sputtering process, the indium bonding layer cannot flow out, and the problem that the current indium bonding target cannot bear high-power sputtering and is poor in electric conduction and thermal conduction is solved.
Example 2 of the present invention, based on example 1, relates to a relevant comparative experiment:
r1, preparation work:
preparing annular targets, substrates, vacuum chambers, ion sources and other materials and equipment, and performing corresponding cleaning and inspection.
Preparing A, B total 2 groups of tubular targets with the length of 3191mm and the outer diameter of 160/152mm, wherein each target is assembled by using 7 sections of target tubes, wherein group A is a tubular target bonded by a conventional method and group B is a tubular target bonded by adopting metal indium.
And sequentially placing the tubular targets in the group A and the group B into equipment, and adjusting the substrate and the ion source.
Argon is used as the working gas, and the flow rate is controlled at 30sccm.
R2, vacuum treatment:
pumping the vacuum chamber to 10 ≡ - 7mbar, ensuring clean environment without gas interference.
Simultaneously, in the sputtering process of the target material, the pressure in the vacuum chamber is reduced to 10 ≡ - In the range of 7mbar to avoid interference of gas molecules with the sputtering process.
R3, target installation:
the annular target is arranged at the center of the ion source, and the bombardment angle and energy of the ion beam are adjusted to adapt to the geometric shape and preparation requirement of the target.
Wherein the ion beam bombardment angle: the geometry of the target material and the preparation requirement are adjusted to be consistent, and the bombardment angle of the ion beam is adjusted to be 55 degrees.
R4, substrate mounting:
the substrate is arranged on a sample stage, the position and the angle of the sample stage are adjusted to meet the requirements of ion beam bombardment and film deposition, and the distance between the target material and the substrate is set to be 7cm.
R5, ion beam bombardment:
and starting an ion source, bombarding the surface of the annular target material with an ion beam, generating an ion beam sputtering effect, converting a material or a compound into an ion state, and forming a film on the substrate.
R6, deposition time:
according to the adjusted preparation requirement, the power of the power supply is set to 15Kw/m, and the sputtering time is set to 60min.
R7, film treatment:
after the required sputtering time and film thickness are completed, stopping bombardment of the ion beam, closing the vacuum pump, waiting for the vacuum chamber to return to the atmospheric pressure, and carrying out annealing and oxidation treatment on the film after the deposition is completed.
R8, comparing the targets of the group A and the group B, and checking indium leakage, wherein the specific results are shown in the table 1:
table 1: comparison table for indium leakage of targets in group A and group B
According to the comparison experiment, the probability that the conventional indium bonding target material is molten or even off-target is nearly 50% when the sputtering power is higher than 15Kw/m, and the coating efficiency and the coating quality are greatly affected. The bonding process of the invention does not have the risk of melting the bonding layer.
Example 3 of the present invention, based on examples 1 and 2, relates to a relevant comparative experiment:
preparing A, B total 2 groups of tubular targets with the length of 3191mm and the outer diameter of 160/152mm, wherein each target is assembled by using 7 sections of target tubes, wherein group A is a tubular target bonded by a conventional method and group B is a tubular target bonded by adopting organic silica gel.
The power of the power supply was set to 15Kw/m and the sputtering time was set to 60min. The cracking conditions of the two groups of targets are observed and compared, and specific results are shown in table 2:
table 2: comparison table for cracking conditions of targets in group A and group B
Therefore, the end head of the matching gap between the target tube and the back tube is sealed by adopting the glue, and the middle part is filled with indium for bonding, so that even if the indium bonding layer is heated and melted in the sputtering process, the indium bonding layer cannot flow out, and the target tube cannot crack due to poor heat conduction of the bonding layer. The method solves the problems that the existing indium bonded target material cannot bear high-power sputtering and the adhesive bonded target material is poor in electric conduction and thermal conduction.
Finally, it should be noted that: the above examples are only specific embodiments of the present invention, and are not intended to limit the scope of the present invention, but it should be understood by those skilled in the art that the present invention is not limited thereto, and that the present invention is described in detail with reference to the foregoing examples: any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or perform equivalent substitution of some of the technical features, while remaining within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. The bonding method of the assembled tubular target structure is characterized by comprising the following steps of:
s1, dividing a metal back pipe into fixed lengths;
s2, quick connection structures are arranged at two ends of each section of back pipe;
s3, independently bonding each section of target tube and each section of back tube;
s4, sealing a fit gap between the inner hole of the target tube and the back tube by using high-temperature-resistant bonding adhesive at one end, and filling an adhesive into the fit gap between the inner hole of the target blank and the back tube after the bonding adhesive is solidified to form a bonding layer;
s5, sealing the other end of the fit gap by using bonding glue.
2. The method of bonding a fabricated tubular target structure according to claim 1, wherein: the binder in step S4 may be a metallic indium liquid or an organic binder.
3. The method of bonding a fabricated tubular target structure according to claim 1, wherein: and S2, setting external threads at one end of each section of back pipe and setting internal threads at the other end of each section of back pipe.
4. The method of bonding a fabricated tubular target structure according to claim 1, wherein: the gap between the target embryo and the back tube is 1mm.
5. The method of bonding a fabricated tubular target structure according to claim 1, wherein: the spacing between the ends of adjacent target blanks is 0.3mm-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310575210.2A CN116732478A (en) | 2023-05-19 | 2023-05-19 | Bonding method for assembled tubular target structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310575210.2A CN116732478A (en) | 2023-05-19 | 2023-05-19 | Bonding method for assembled tubular target structure |
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| Publication Number | Publication Date |
|---|---|
| CN116732478A true CN116732478A (en) | 2023-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310575210.2A Pending CN116732478A (en) | 2023-05-19 | 2023-05-19 | Bonding method for assembled tubular target structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008184640A (en) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | Cylindrical sputtering target and method of manufacturing the same |
| JP2018111868A (en) * | 2017-01-13 | 2018-07-19 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical sputtering target |
| TWI658163B (en) * | 2017-11-24 | 2019-05-01 | 友礦材料股份有限公司 | Target lamination manufacturing method |
| CN211227320U (en) * | 2019-12-27 | 2020-08-11 | 苏州凯利昂光电科技有限公司 | Sputtering cathode structure of magnetron sputtering coating machine |
| CN215799860U (en) * | 2021-08-25 | 2022-02-11 | 宁波江丰热等静压技术有限公司 | Rotary target with split type back pipe |
-
2023
- 2023-05-19 CN CN202310575210.2A patent/CN116732478A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008184640A (en) * | 2007-01-29 | 2008-08-14 | Tosoh Corp | Cylindrical sputtering target and method of manufacturing the same |
| JP2018111868A (en) * | 2017-01-13 | 2018-07-19 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical sputtering target |
| TWI658163B (en) * | 2017-11-24 | 2019-05-01 | 友礦材料股份有限公司 | Target lamination manufacturing method |
| CN211227320U (en) * | 2019-12-27 | 2020-08-11 | 苏州凯利昂光电科技有限公司 | Sputtering cathode structure of magnetron sputtering coating machine |
| CN215799860U (en) * | 2021-08-25 | 2022-02-11 | 宁波江丰热等静压技术有限公司 | Rotary target with split type back pipe |
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