[0002] 作為將金屬膜或氧化物膜等之薄膜進行成膜的手段，使用濺鍍靶之濺鍍法則被廣泛使用。 一般而言，濺鍍靶係作為藉由接合層而加以接合因應成膜之薄膜的組成而加以形成之濺鍍靶材，和保持此濺鍍靶材之襯墊材的構造。 作為構成介入存在於濺鍍靶材與襯墊材之間的接合層之接合材，係例如，可舉出In、或者Sn-Pb合金等。為了縮小接合時之作業性或偏差，構成此等接合層之接合材的熔點，係例如使用300℃以下比較低之低熔點的材料。 [0003] 作為上述之濺鍍靶係例如，加以提案有平板型濺鍍靶，及圓筒型濺鍍靶。 在平板型濺鍍靶中，係作為加以層積平板形狀之濺鍍靶材與平板狀之襯墊材(襯墊板)的構造。 另外，在圓筒型濺鍍靶中，例如如記載於專利文獻1地，作為藉由接合層而加以接合圓筒狀的襯墊材(襯墊管)於圓筒形狀的濺鍍靶材之內周側的構造。然而，為了對應對於大型基板之成膜，加以提案有將圓筒型靶之濺鍍靶材的軸線方向長度，例如設定為比較長的0.5m以上之構成。 [0004] 在平板型濺鍍靶中，濺鍍靶材之使用效率為低之20～30%程度，無法連續濺鍍之故，而無法有效率地進行成膜。 對此，圓筒型濺鍍靶係其外周面則作為濺鍍面，而從旋轉濺鍍靶之同時，實施濺鍍之情況，比較於使用平板型濺鍍靶之情況，適合於連續成膜，且侵蝕部則擴散於周方向之故，圓筒形狀之濺鍍靶材的使用效率則具有60～80%變高之優點。 更且，在圓筒型濺鍍靶中，係作為自襯墊管之內周側加以冷卻的構成，從如上述，侵蝕部則擴散於周方向之情況，可抑制圓筒形狀之濺鍍靶材的溫度上升，而可提升濺鍍時之功率密度，而成為更可使成膜的吞吐量提升者。 [先前技術文獻] [專利文獻] [0005] [專利文獻1] 日本特開2014-037619號公報[0002] As a means of forming a thin film such as a metal film or an oxide film, a sputtering method using a sputtering target is widely used. Generally speaking, a sputtering target is a sputtering target that is formed by joining a bonding layer in accordance with the composition of a thin film to be formed, and the structure of a backing material that holds the sputtering target. ""As the bonding material constituting the bonding layer interposed between the sputtering target material and the backing material, for example, In, or Sn-Pb alloy, etc. can be cited. In order to reduce the workability or variation during bonding, the melting point of the bonding material constituting the bonding layer is, for example, a material with a relatively low melting point below 300°C. [0003] As the above-mentioned sputtering target system, for example, a flat-plate sputtering target and a cylindrical sputtering target have been proposed. In a flat-plate sputtering target, it is a structure in which a flat-plate-shaped sputtering target material and a flat-plate backing material (backing plate) are laminated. In addition, in the cylindrical sputtering target, for example, as described in Patent Document 1, it is used as an example of a cylindrical sputtering target that is bonded to a cylindrical spacer material (gasket tube) via a bonding layer. The structure of the inner circumference. However, in order to cope with the film formation on a large substrate, a configuration in which the axial length of the sputtering target material of the cylindrical target is set to be relatively long, for example, 0.5 m or more has been proposed. [0004] In the flat-plate sputtering target, the use efficiency of the sputtering target is about 20-30% low, and continuous sputtering is impossible, and the film cannot be formed efficiently. In this regard, the cylindrical sputtering target has its outer peripheral surface as the sputtering surface, and the sputtering is performed while rotating the sputtering target, which is more suitable for continuous film formation than the flat-plate sputtering target. And because the corroded part spreads in the circumferential direction, the efficiency of using the cylindrical sputtering target material has the advantage of being 60-80% higher. Moreover, in the cylindrical sputtering target, it is a structure that cools from the inner peripheral side of the liner tube. As described above, the erosion part spreads in the circumferential direction, and the cylindrical sputtering target can be suppressed The temperature of the material rises, which can increase the power density during sputtering, and become a throughput increaser for film formation. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] JP 2014-037619 A
[發明欲解決之課題] [0006] 但近年來，在液晶面板，太陽能電池面板等中，從更加要求成本降低之情況，要求更提升濺鍍時之功率密度而更加使成膜的吞吐量提升者。 在此，在上述之圓筒型濺鍍靶中，經由更加之功率密度的上升，在濺鍍時中，圓筒形狀的濺鍍靶材的表面溫度則上升，而有由In等之低熔點金屬所構成之接合層熔出的問題。因此，在以往的圓筒型濺鍍靶中，係無法實現更加之功率密度的上升者。 [0007] 另外，在以往的圓筒型濺鍍靶中，在使用初期係即使沒有問題，而伴隨著持續使用，侵蝕則進行而濺鍍靶材之厚度則產生局部性地減少，有著位置於圓筒形狀的濺鍍靶材內周側的接合層熔出之虞。 但從更加成本降低之觀點，為了更使圓筒形狀的濺鍍靶材之使用效率提升而減少圓筒型濺鍍之交換頻率，而要求有即使侵蝕持續的情況亦可使用之圓筒型濺鍍靶。 [0008] 更且，為了在液晶面板，太陽能電池面板等之更加成本降低，經由成膜之基板的大型化，圓筒型濺鍍靶的軸線方向長度則變長，但其徑方向的尺寸係未有大變更。因此，無法有效率地將濺鍍時所產生的熱散發於襯墊管的內周側，而圓筒型濺鍍靶則成為容易溫度上升，仍然有產生接合層之溶出之虞。 [0009] 另外，上述之圓筒型濺鍍靶的溫度上升係經由流動冷卻水於襯墊管內部而加以冷卻，但經由濺鍍裝置，係有將使用於圓筒型濺鍍靶的冷卻之冷卻水，使用於另外之圓筒型濺鍍靶的冷卻者之故，而有圓筒型濺鍍靶全體則成為容易溫度上升者，位於圓筒形狀之濺鍍靶材內側的接合層則成為容易熔出。 [0010] 本發明係有鑑於上述情事所作為之構成，其目的為提供：即使為提高濺鍍時之功率密度的情況，或經由使用而侵蝕持續之情況，亦可抑制接合層之熔出，而可安定進行成膜之圓筒型濺鍍靶。 [為了解決課題之手段] [0011] 為了解決上述的課題，本發明之一形態的圓筒型濺鍍靶係具備：構成圓筒形狀之濺鍍靶材，和藉由接合層而加以接合於此濺鍍靶材之內周側的襯墊管的圓筒型濺鍍靶，其特徵為在前述襯墊管之口徑方向的熱阻抗則作為6.5×10-5
K/W以下者。 [0012] 如根據作為如此構成之本發明之一形態的圓筒型濺鍍靶，因在前述襯墊管之口徑方向的熱阻抗作為6.5×10-5
K/W以下之故，經由有效率地使在圓筒形狀之濺鍍靶材所產生的熱散發於前述襯墊管側之時，可抑制圓筒型濺鍍靶之溫度上升，而可抑制接合層之熔出者。因而，可以高功率密度而進行濺鍍，使成膜的吞吐量提升。另外，經由使用而侵蝕持續進行，圓筒形狀的濺鍍靶材之厚度即使局部性變薄，亦成為可進行濺鍍成膜。 [0013] 在此，在本發明之一形態的圓筒型濺鍍靶中，自前述接合層之外周面至前述襯墊管之內周面為止之口徑方向的熱阻抗，則作為1.2×10-4
K/W以下者為佳。 此情況，在接合層及襯墊管中加以促進熱的傳導，更可有效率將在圓筒形狀之濺鍍靶材所產生的熱，傳達至前述襯墊管側，而可抑制接合層之熔出者。 [0014] 另外，在本發明之一形態之圓筒型濺鍍靶材中，前述接合層與前述襯墊管的接合強度則為4MPa以上者為佳，而8MPa以上者為更佳。 此情況，藉由接合層而確實地加以接合前述濺鍍靶材與前述襯墊管，而可確實地將在圓筒形狀之濺鍍靶材所產生的熱，傳達至前述襯墊管側，而可抑制接合層之熔出者。 [0015] 更且，在本發明之一形態之圓筒型濺鍍靶材中，前述襯墊管係維氏硬度為100Hv以上者為佳。 此情況，從充分地確保襯墊管的硬度情況，即使對於圓筒型濺鍍靶產生作用有彎曲應力等之情況，亦可抑制襯墊管產生變形，而減輕對於接合層之負荷者。因而，即使為經由溫度上升而接合層產生軟化的情況，未有推擠接合層者。 [0016] 另外，在本發明之一形態之圓筒型濺鍍靶材中，前述襯墊管係由銅合金所構成者為佳。 此情況，因由銅合金而加以構成襯墊管之故，對於熱傳導性優越，而可降低在前述襯墊管之口徑方向的熱阻抗。 [發明效果] [0017] 如以上，如根據本發明，成為可提供：即使為提高濺鍍時之功率密度的情況，或經由使用而侵蝕持續之情況，亦可抑制接合層之熔出，而可安定進形成膜之圓筒型濺鍍靶。[Problems to be solved by the invention] [0006] However, in recent years, in liquid crystal panels, solar cell panels, etc., from the situation where cost reduction is more demanded, it is required to increase the power density during sputtering and increase the throughput of film formation. By. Here, in the above-mentioned cylindrical sputtering target, the surface temperature of the cylindrical sputtering target rises during sputtering, and the surface temperature of the cylindrical sputtering target increases, and there is a low melting point such as In. The problem of melting out of the bonding layer made of metal. Therefore, in the conventional cylindrical sputtering target, it is impossible to achieve a further increase in power density. [0007] In addition, in the conventional cylindrical sputtering target, even if there is no problem in the initial stage of use, with continuous use, erosion progresses and the thickness of the sputtering target is locally reduced. The bonding layer on the inner peripheral side of the cylindrical sputtering target may melt. However, from the viewpoint of cost reduction, in order to increase the efficiency of the use of cylindrical sputtering targets and reduce the exchange frequency of cylindrical sputtering, it is necessary to have cylindrical sputtering that can be used even if the erosion continues. Plating target. [0008] Furthermore, in order to further reduce the cost of liquid crystal panels, solar cell panels, etc., through the increase in the size of the film-forming substrate, the axial length of the cylindrical sputtering target is increased, but the size in the radial direction is No major changes. Therefore, the heat generated during sputtering cannot be efficiently dissipated to the inner peripheral side of the liner tube, and the cylindrical sputtering target becomes easy to rise in temperature, and there is still a risk of elution of the bonding layer. [0009] In addition, the temperature rise of the cylindrical sputtering target described above is cooled by flowing cooling water inside the liner tube, but through the sputtering device, there is a cooling method that will be used for the cylindrical sputtering target. The cooling water is used for the cooler of another cylindrical sputtering target, and the entire cylindrical sputtering target is easy to rise in temperature, and the bonding layer located inside the cylindrical sputtering target becomes Easy to melt. [0010] The present invention is made in view of the above situation, and its purpose is to provide: even in the case of increasing the power density during sputtering, or in the case where corrosion continues through use, the melting of the bonding layer can be suppressed, The cylindrical sputtering target can be used for film formation stably. [Means for Solving the Problem] [0011] In order to solve the above-mentioned problems, a cylindrical sputtering target of one aspect of the present invention includes: a sputtering target constituting a cylindrical shape; The cylindrical sputtering target of the liner tube on the inner peripheral side of the sputtering target is characterized in that the thermal resistance in the diameter direction of the liner tube is 6.5×10 -5 K/W or less. [0012] According to the cylindrical sputtering target which is one aspect of the present invention constituted in this way, since the thermal resistance in the diameter direction of the liner tube is 6.5×10 -5 K/W or less, it is efficient When the heat generated in the cylindrical sputtering target is dissipated to the liner tube side, the temperature rise of the cylindrical sputtering target can be suppressed, and the melting of the bonding layer can be suppressed. Therefore, sputtering can be performed at a high power density, and the throughput of film formation can be improved. In addition, erosion continues through use, and even if the thickness of the cylindrical sputtering target material is locally thinned, it becomes possible to sputter the film. [0013] Here, in the cylindrical sputtering target of one aspect of the present invention, the thermal resistance in the diameter direction from the outer circumferential surface of the bonding layer to the inner circumferential surface of the liner tube is 1.2×10 -4 K/W or less is better. In this case, the heat conduction in the bonding layer and the liner tube is promoted, and the heat generated in the cylindrical sputtering target can be efficiently transferred to the liner tube side, and the bonding layer can be suppressed. Melter. [0014] In addition, in the cylindrical sputtering target material of one aspect of the present invention, the bonding strength between the bonding layer and the liner tube is preferably 4 MPa or more, and more preferably 8 MPa or more. In this case, the sputtering target and the liner tube are surely joined by the bonding layer, and the heat generated in the cylindrical sputtering target can be reliably transferred to the liner tube side. It can inhibit the melting out of the bonding layer. [0015] Furthermore, in the cylindrical sputtering target material according to one aspect of the present invention, it is preferable that the Vickers hardness of the liner pipe system is 100 Hv or more. In this case, since the hardness of the liner tube is sufficiently ensured, even when bending stress or the like acts on the cylindrical sputtering target, the liner tube can be prevented from being deformed and the load on the joining layer can be reduced. Therefore, even when the bonding layer is softened due to temperature rise, there is no one who pushes the bonding layer. [0016] In addition, in the cylindrical sputtering target material of one aspect of the present invention, it is preferable that the aforementioned liner tube is composed of a copper alloy. In this case, since the backing tube is made of a copper alloy, it is superior in thermal conductivity, and the thermal resistance in the diameter direction of the aforementioned backing tube can be reduced. [Effects of the Invention] [0017] As described above, according to the present invention, it is possible to provide: even in the case of increasing the power density during sputtering, or in the case where corrosion continues through use, the melting of the bonding layer can be suppressed, and It can settle into a cylindrical sputtering target that forms a film.
[0019] 以下，對於本發明之實施形態之圓筒型濺鍍靶材，參照附加的圖面加以說明。 [0020] 有關本實施形態之圓筒型濺鍍靶材10係如圖1所示，具備：構成沿著軸線O而延伸存在之圓筒形狀的濺鍍靶材11，和加以插入於此濺鍍靶材11之內周側的圓筒形狀之襯墊管12。 並且，圓筒形狀之濺鍍靶材11與襯墊管12係藉由接合層13而加以接合。 [0021] 濺鍍靶材11係作為因應成膜之薄膜的組成之組成，而以各種金屬及氧化物等而加以構成。 另外，此圓筒形狀的濺鍍靶材11之尺寸係作為例如外徑DT
為0.15m≦DT
≦0.17m之範圍內，內徑dT
為0.12m≦dT
≦0.14m之範圍內，軸線O方向長度lT
為0.5m≦lT
≦3m之範圍內。 [0022] 襯墊管12係為了保持圓筒形狀之濺鍍靶材11而確保機械強度而加以設置之構成，更且具有對於圓筒形狀之濺鍍靶材11的電力供給，以及圓筒形狀之濺鍍靶材11之冷卻的作用。為此，作為襯墊管12係要求對於機械強度，電性傳導性及熱傳導性優越者，而例如，由SUS304等之不鏽鋼，銅或銅合金，鈦等而加以構成。具體而言，例如含有Co：0.10mass%以上0.30mass%以下、P：0.030mass%以上0.10mass%以下、Sn：0.01mass%以上0.50mass%以下、Ni：0.02mass%以上0.10mass%以下、Zn：0.01mass%以上0.10mass%以下，而殘留部則可由Cu或作為不可避不純物之組成的銅合金而構成者。 [0023] 另外，在本實施形態中，襯墊管12係維氏硬度則作為100Hv以上。對於此維氏硬度，係可經由襯墊管12之材質或在製造工程之熱處理條件等而做調整。襯墊管12之維氏硬度係120Hv以上為佳，但並未限定於此。襯墊管12之維氏硬度係亦可作為250Hv以下。 [0024] 更且，在本實施形態中，襯墊管12之導電率為60%IACS以上者為佳。襯墊管12之導電率係70%IACS以上者為更佳，但並未限定於此。襯墊管12之導電率係亦可作為90%IACS以下。 另外，襯墊管12之熱傳導率係200W/(m･K)以上者為佳。襯墊管12之熱傳導率係300W/(m･K)以上者為佳，但並未限定於此。襯墊管12之熱傳導率係亦可作為430W/(m･K)以下。 例如，在含有上述之Co、P、Sn、Ni、Zn的銅合金中，係可將導電率作為60～80%IACS、而將熱傳導率作為300W/(m･K)以上者。 [0025] 在此，此襯墊管12之尺寸係例如作為外徑DB
為0.12m≦DB
≦0.14m之範圍內，內徑dB
為0.11m≦dB
≦ 0.13m之範圍，軸線O方向長度lB
為0.5m≦lB
≦3m之範圍內。 [0026] 介入存在於圓筒形狀之濺鍍靶材11與襯墊管12之間的接合層13係使用接合材而接合圓筒形狀之濺鍍靶材11與襯墊管12時而加以形成。 構成接合層13之接合材係例如，以In等之熔融温度為157℃以下之低熔點金屬而加以構成。另外，接合層13之厚度t係作為0.0005m≦t≦0.004m之範圍內。 [0027] 另外，在本實施形態之圓筒型濺鍍靶10中，接合層13與襯墊管12之接合強度則作為4MPa以上。然而，此接合強度係在以接著劑而固定層積於口徑方向之圓筒形狀的濺鍍靶材11與接合層13之接合部的狀態，將濺鍍靶材11與襯墊管12，拉伸於層積方向(口徑方向)時之拉伸強度。接合層13與襯墊管12之接合強度係作為26MPa以下亦可。經由接合材之圓筒形狀的濺鍍靶材11與襯墊管12之接合工程係作為加熱溫度為170℃以上250℃以下之範圍內，而由此加熱溫度的保持時間作為10分以上120分以下之範圍內。然而，在接合工程中，以記載於日本特開2014-37619之方法，流入接合材於濺鍍靶材11與襯墊管12之間隙者為佳。 [0028] 並且，在本實施形態中，在襯墊管12之口徑方向(圖1(a)中之基準線r方向)的熱阻抗RB
則作為6.5× 10-5
K/W以下。具體而言，經由考慮襯墊管12之熱傳導率與基準線r方向厚度(外徑與內徑的差)之時，在襯墊管12之口徑方向的熱阻抗RB
則作為6.5×10-5
K/W以下。 在本實施形態中，襯墊管12之熱傳導率則作為200W/(m･K)以上，而因應此而加以設計襯墊管12之尺寸。襯墊管之熱阻抗RB
係5.0×10-5
K/W以下者為佳，但並不限定於此。襯墊管之熱阻抗RB
係作為2.5×10-5
K/W以上亦可。 [0029] 更且，在本實施形態中，自接合層13之外周面至襯墊管12之內周面為止之基準線r方向的熱阻抗則作為1.2×10-4
K/W以下。具體而言，經由考慮襯墊管12之熱傳導率與其基準線r方向厚度(外徑與內徑的差)，接合層13之熱傳導率與其基準線r方向厚度(外徑與內徑的差)之時，自接合層13之外周面至襯墊管12之內周面為止之基準線r方向的熱阻抗則作為1.2×10-4
K/W以下。自接合層13之外周面至襯墊管12之內周面為止之基準線r方向的熱阻抗係作為1.1×10-4
K/W以下為佳，但並非限定於此。自接合層13之外周面至襯墊管12之內周面為止之基準線r方向的熱阻抗係亦可作為1.0×10-6
K/W以上。 [0030] 在此，對於在圓筒型濺鍍靶10之口徑方向的熱阻抗之算出方法，使用圖2而加以說明。 將襯墊管12之內周面的溫度作為T1
、將襯墊管12之外周面(接合層13之內周面)的溫度作為T2
，將濺鍍靶材11之內周面(接合層13之外周面)的溫度作為T3
，將濺鍍靶材11之外周面的溫度作為T4
。 另外，將至襯墊管12之內周面為止的半徑作為r1
將至襯墊管12之外周面(接合層13之內周面)為止的半徑作為r2
，將至濺鍍靶材11之內周面(接合材13之外周面)為止的半徑作為r3
，將至濺鍍靶材11之外周面的半徑作為r4
。 [0031] 如此，襯墊管12，接合層13，圓筒形狀之濺鍍靶材11的各層之熱阻抗Ri
係由以下式所表示。在此，λ1
係襯墊管12之熱傳導率，λ2
係接合層13之熱傳導率，λ3
係圓筒型之濺鍍靶材11之熱傳導率，l係圓筒形狀之濺鍍靶材11之長度(在圖1中為IT
)。圓筒型濺鍍靶則自複數之圓筒形狀之濺鍍靶材11而加以構成之情況，係成為此等複數之圓筒形狀之濺鍍靶材11之長度的合計。 [0032] 並且，在圓筒全體之熱的通過量Q係由以下式所表示，此式的分母則成為圓筒型濺鍍靶10全體的熱阻抗Rtotal
。[0033] 使用上述式，算出在襯墊管12之基準線r方向的熱阻抗RB
、在接合層13之口徑方向的熱阻抗RJ
、在圓筒形狀之濺鍍靶材11之口徑方向的熱阻抗RT
、自接合層13之外周面至襯墊管12之內周面為止之口徑方向的熱阻抗，呈成為上述的範圍內地，設計襯墊管12，接合層13之材質，尺寸。 然而，在上述之各數式中，考慮長度l，但在圓筒型濺鍍靶10中，對於圓筒形狀之濺鍍靶材11之長度方向而言均一地加以配置熱源之故，對於熱阻抗R係如以口徑方向(基準線r方向)之一次元而加以計算即可。因此，在本說明書中，將在上述之各數式之長度l作為1，而計算熱阻抗R。 [0034] 在作為如以上構成之本實施形態之圓筒型之濺鍍靶材10中，因將襯墊管12之基準線r方向的熱阻抗RB
作為6.5×10-5
K/W以下之故，可有效率地將在圓筒形狀之濺鍍靶材11所產生的熱傳達至襯墊12之內周側，而可抑制由低熔點金屬所成之接合層13的熔出者。因而，可以高功率密度而進行濺鍍，使成膜的吞吐量提升。另外，經由使用而侵蝕持續進行，圓筒形狀的濺鍍靶材11之厚度即使局部性變薄，亦成為可持續使用者。 [0035] 另外，在本實施形態中，因將自接合層13之外周面至襯墊管12之內周面為止之口徑方向的熱阻抗作為1.2×10-4
K/W以下之故，更可有效率地將在圓筒形狀之濺鍍靶材11所產生的熱傳達至襯墊12之內周側，而可抑制圓筒形狀之濺鍍靶材11的溫度上升者。因而，可抑制由低熔點金屬所成之接合層13的熔出者。 [0036] 更且，在本實施形態中，因將接合層13與襯墊管12之接合強度作為4MPa以上之故，藉由接合層13而確實地加以接合圓筒形狀之濺鍍靶材11與襯墊管12，而可將在濺鍍靶材11所產生的熱，確實地傳達至襯墊管12側，進而可抑制接合層13的熔出者。 [0037] 另外，在本實施形態中，因將襯墊管12之維氏硬度作為100Hv以上之故，即使對於圓筒型濺鍍靶10產生作用有彎曲應力等之情況，亦可抑制襯墊管12產生變形，而減輕對於接合層13之負荷者。因而，即使為經由溫度上升而接合層13產生軟化的情況，亦未有推擠接合層13者。 [0038] 以上，對於本發明之實施形態已做過說明，但本發明係未加以限定於此等，而在不脫離其發明之技術思想範圍，可作適宜變更。 在本實施形態中，舉例說明過圖1所示之圓筒型濺鍍靶，但並非限定於此，而如為具備：構成圓筒形狀之濺鍍靶材，和藉由接合層而加以接合於此圓筒形狀之濺鍍靶材的內周側之襯墊管之圓筒型濺鍍靶即可。 [實施例] [0039] 以下，對於欲確認有關本發明之圓筒型濺鍍靶之作用效果而實施之確認試驗之結果，加以說明。 [0040] 在實施例中，當認為圓筒型濺鍍靶之接合層溫度T3
則到達至最高溫度，模擬圓筒型濺鍍靶交換之前。具體而言，圓筒形狀之濺鍍靶材之外徑r4係圓筒形狀之濺鍍靶材的厚度則平均地減少，且呈成為圓筒形狀之濺鍍靶材之使用效率約80%地進行設定。 [0041] 準備表1所示之圓筒形狀之濺鍍靶材，襯墊管，藉由表1所示之材質的接合層，以日本特開2014-37619所記載之方法而接合此等圓筒形狀之濺鍍靶材與襯墊管，得到圓筒型濺鍍靶。 [0042] 表1所示之圓筒形狀之濺鍍靶材之CuGa係Ga32mass%、殘留部Cu或作為不可避不純物之組成的銅合金，AZO係Al2
O3
1.0mass%，殘留部ZnO或作為不可避不純物之組成的氧化物。 [0043] Cu合金製襯墊管係含有Co：0.20mass%、P：0.06mass%、Sn：0.10mass%以上、Ni：0.05mass%、Zn：0.05mass%，殘留部Cu或作為不可避不純物之組成的Cu合金，而歷經以下的製造條件。以推擠前加工溫度900℃，推擠後冷卻開始溫度870℃，自上述組成之鑄塊之推擠後的剖面收縮率96%之條件，進行包含上述組成的鑄塊之熔體化處理之熱推擠，得到推擠素管。以自推擠至拔出為止之剖面收縮率23%的條件，進行推擠素管的冷拔出，經由之後以500℃進行3小時之熱處理之時，製造Cu合金製襯墊管素管，經由進行此襯墊管素管之加工之時，製造Cu合金製襯墊管。 [0044] 然而，表1所示之Cu合金製襯墊管係使用純度99.99mass%之構成。 表1所示之Mo製襯墊管係作為純度99mass%之構成。 表1所示之Al合金製襯墊管係作為自JIS A 2017所成之構成。 表1所示之Ti製襯墊管係作為由JIS H 4600 2種所成之構成。 [0045] (維氏硬度) 襯墊管的硬度係依據JIS Z 2244而進行測定。具體而言，自襯墊管採取硬度測定用之試料，將測定面進行研磨，由顯微維氏硬度計而進行硬度測定。於表1，顯示襯墊管之硬度。 [0046] (熱傳導率) 襯墊管，接合層，圓筒形狀的濺鍍靶材的熱傳導率係依據JIS R 1611而進行測定。自襯墊管，接合層，圓筒形狀的濺鍍靶材採取熱傳導率測定用的試料，研磨測定面，由雷射閃光法而進行熱傳導率測定。 [0047] (熱阻抗) 經由以實施形態所說明之方法，利用上述熱傳導率的值而計算圓筒型濺鍍靶之基準線r方向的熱阻抗。將在襯墊管之口徑方向的熱阻抗，和自接合層之外周面至襯墊管之內周面為止之口徑方向的熱阻抗，示於表1。 [0048] (接合層與襯墊管之接合強度) 如圖3(a)所示，使用線切斷或帶鋸機等，從所得到之圓筒型濺鍍靶之側面，切出圓柱狀的樣品。如圖3(b)所示地切下此樣品之端面(外周面及內周面)而作為平坦面之同時，經由璇盤加工而切削樣品之外周面，得到φ20mm之測定試料。測定試料之濺鍍靶材與接合層之接合部係經由自外側塗佈接著劑之時而固定。將此測定試料，使用拉伸試驗機INSTORON5984(INSTRON JAPAN公司製)而測定拉伸強度。然而，最大荷重150kN、變位速度作為0.1mm/min。將此拉伸強度，作為接合層與襯墊管之接合強度。將所測定之接合強度示於表1。 [0049] 並且，使用此等之圓筒型濺鍍靶，首先進行預濺鍍。預濺鍍條件係為全壓0.8Pa，以表2所示之濺鍍輸出之1/10、1/5、1/3、1/2之輸出，進行各5分鐘濺鍍。之後，以表2所示之條件進行8小時濺射，確認濺射後有無接合層之熔出。 [0050] 將未有接觸於圓筒形狀之濺鍍靶材之全端面的接合層之熔出者評估為「A」，在圓筒形狀之濺鍍靶材之全端面中，對於軸線O方向不足1mm之接合層的熔出則有2處以下者評估為「B」、在圓筒形狀之濺鍍靶材之全端面中，對於軸線O方向不足1mm之接合層的熔出則有3處以上或者確認到有1mm以上之接合層的熔出者評估為「C」、確認到有濺鍍靶材之偏移者評估為「D」。 [0051][0052][0053] 對於在襯墊管之口徑方向的熱阻抗則較本發明為大之比較例，係濺鍍試驗的結果，確認到有接合層之熔出。 對此，在襯墊管之口徑方向的熱阻抗則作為本發明之範圍內的本發明例中，係加以抑制接合層之熔出。 另外，在本發明例中，接合層與襯墊管之接合強度則作為4MPa以上，而加以確認到藉由接合層而確實地接合濺鍍靶材與襯墊管者。 然而，在將襯墊管的硬度作為100Hv以上者中，特別加以抑制接合層之熔出。 [產業上之利用可能性] [0054] 如根據本發明之圓筒型濺鍍靶，即使為提高設定濺鍍時之功率密度的情況，或經由使用而侵蝕持續之情況，亦可抑制接合層之熔出，而可安定進行成膜者。[0019] Hereinafter, the cylindrical sputtering target material of the embodiment of the present invention will be described with reference to the attached drawings. [0020] The cylindrical sputtering target 10 of this embodiment is shown in FIG. The cylindrical backing tube 12 on the inner peripheral side of the plating target 11 is applied. In addition, the cylindrical sputtering target 11 and the liner tube 12 are joined by the joining layer 13. [0021] The sputtering target 11 is composed of various metals, oxides, etc., as a composition in accordance with the composition of the thin film to be formed. In addition, the dimensions of the cylindrical sputtering target material 11 are, for example , within the range of the outer diameter DT of 0.15m≦D T ≦0.17m, and the inner diameter of d T within the range of 0.12m≦d T ≦0.14m. , The length l T in the direction of the axis O is within the range of 0.5m≦l T ≦3m. [0022] The liner tube 12 is configured to maintain the cylindrical sputtering target 11 and ensure mechanical strength, and has a power supply to the cylindrical sputtering target 11 and a cylindrical shape The cooling effect of the sputtering target material 11. For this reason, the liner tube 12 is required to have excellent mechanical strength, electrical conductivity, and thermal conductivity. For example, it is composed of stainless steel such as SUS304, copper or copper alloy, titanium, and the like. Specifically, for example, it contains Co: 0.10mass% or more and 0.30mass% or less, P: 0.030mass% or more and 0.10mass% or less, Sn: 0.01mass% or more and 0.50mass% or less, Ni: 0.02mass% or more and 0.10mass% or less, Zn: 0.01mass% or more and 0.10mass% or less, and the residual part can be composed of Cu or a copper alloy that is a composition of unavoidable impurities. [0023] In addition, in this embodiment, the Vickers hardness of the gasket tube 12 is set to 100 Hv or more. The Vickers hardness can be adjusted through the material of the liner tube 12 or the heat treatment conditions in the manufacturing process. The Vickers hardness of the liner tube 12 is preferably 120Hv or more, but it is not limited to this. The Vickers hardness of the liner tube 12 can also be less than 250Hv. [0024] Furthermore, in this embodiment, the conductivity of the liner tube 12 is preferably 60% IACS or more. It is better if the conductivity of the liner tube 12 is 70% IACS or higher, but it is not limited to this. The conductivity of the liner tube 12 can also be lower than 90% IACS. In addition, the thermal conductivity of the liner tube 12 is preferably 200W/(m･K) or more. The thermal conductivity of the liner tube 12 is preferably 300 W/(m･K) or more, but it is not limited to this. The thermal conductivity of the liner tube 12 can also be 430W/(m･K) or less. For example, in a copper alloy containing the aforementioned Co, P, Sn, Ni, and Zn, the electrical conductivity can be 60 to 80% IACS and the thermal conductivity can be 300 W/(m･K) or more. [0025] Here, the pad 12 of the tube dimensions are for example as an outer diameter D B of 0.12m ≦ D B ≦ the range of 0.14m, the internal diameter d B is the range 0.11m ≦ d B ≦ 0.13m, the axis The length l B in the O direction is within the range of 0.5m≦l B ≦3m. [0026] The bonding layer 13 intervening between the cylindrical sputtering target 11 and the liner tube 12 is formed by using a bonding material to bond the cylindrical sputtering target 11 and the liner tube 12 . The bonding material constituting the bonding layer 13 is composed of, for example, a low melting point metal having a melting temperature of 157° C. or less such as In. In addition, the thickness t of the bonding layer 13 is within the range of 0.0005 m≦t≦0.004 m. [0027] In addition, in the cylindrical sputtering target 10 of the present embodiment, the bonding strength between the bonding layer 13 and the liner tube 12 is 4 MPa or more. However, this bonding strength is in a state where the bonding part of the cylindrical sputtering target 11 and the bonding layer 13 laminated in the diameter direction is fixed with an adhesive, and the sputtering target 11 and the liner tube 12 are pulled. The tensile strength when stretched in the stacking direction (diameter direction). The bonding strength between the bonding layer 13 and the gasket tube 12 may be 26 MPa or less. The joining process of the cylindrical sputtering target material 11 and the liner tube 12 through the joining material is a heating temperature within the range of 170°C or more and 250°C or less, and the holding time of the heating temperature is 10 minutes or more and 120 minutes Within the following range. However, in the joining process, it is preferable to use the method described in JP 2014-37619 to flow the joining material into the gap between the sputtering target 11 and the liner tube 12. [0028] In the present embodiment, the pad 12 of the pipe diameter direction (r direction reference line in FIG. 1 (a), of) the thermal resistance R B as 6.5 × 10 -5 K / W or less. Specifically, when considering the thermal conductivity of the gasket tube 12 and the thickness in the direction of the reference line r (the difference between the outer diameter and the inner diameter), the thermal resistance R B in the diameter direction of the gasket tube 12 is 6.5×10 − Below 5 K/W. In this embodiment, the thermal conductivity of the liner tube 12 is 200 W/(m･K) or more, and the size of the liner tube 12 is designed accordingly. The thermal resistance R B of the liner tube is preferably 5.0×10 -5 K/W or less, but it is not limited to this. The thermal resistance R B of the liner tube can be 2.5×10 -5 K/W or more. [0029] Furthermore, in this embodiment, the thermal resistance in the direction of the reference line r from the outer circumferential surface of the bonding layer 13 to the inner circumferential surface of the gasket tube 12 is set to 1.2×10 -4 K/W or less. Specifically, by considering the thermal conductivity of the liner tube 12 and its reference line r-direction thickness (the difference between the outer diameter and the inner diameter), the thermal conductivity of the bonding layer 13 and its reference line r-direction thickness (the difference between the outer diameter and the inner diameter) At this time, the thermal resistance in the direction of the reference line r from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the liner tube 12 is 1.2×10 -4 K/W or less. The thermal resistance in the direction of the reference line r from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the gasket tube 12 is preferably 1.1×10 -4 K/W or less, but it is not limited to this. The thermal resistance system in the direction of the reference line r from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the liner tube 12 may be 1.0×10 -6 K/W or more. [0030] Here, the method of calculating the thermal resistance in the diameter direction of the cylindrical sputtering target 10 will be described using FIG. 2. Set the temperature of the inner peripheral surface of the liner tube 12 as T 1 and the temperature of the outer peripheral surface of the liner tube 12 (the inner peripheral surface of the bonding layer 13) as T 2 , and set the inner peripheral surface of the sputtering target 11 (bonding The temperature of the outer peripheral surface of the layer 13 is referred to as T 3 , and the temperature of the outer peripheral surface of the sputtering target 11 is referred to as T 4 . In addition, the radius to the inner peripheral surface of the liner tube 12 is referred to as r 1 and the radius to the outer peripheral surface of the liner tube 12 (inner peripheral surface of the bonding layer 13) is referred to as r 2 , and the sputtering target 11 The radius to the inner peripheral surface (the outer peripheral surface of the bonding material 13) is referred to as r 3 , and the radius to the outer peripheral surface of the sputtering target 11 is referred to as r 4 . [0031] Thus, a liner tube 12, the bonding layer 13, sputtering of the cylindrical target 11 of coating layers of the thermal impedance of the formula R i is represented by the following lines. Here, λ 1 is the thermal conductivity of the liner tube 12, λ 2 is the thermal conductivity of the bonding layer 13, λ 3 is the thermal conductivity of the cylindrical sputtering target 11, and l is the cylindrical sputtering target Length of 11 (it is I T in Figure 1). When the cylindrical sputtering target is constructed from a plurality of cylindrical sputtering targets 11, it becomes the total length of the plurality of cylindrical sputtering targets 11. [0032] In addition, the heat throughput Q in the entire cylinder is expressed by the following equation, and the denominator of this equation becomes the thermal resistance R total of the entire cylindrical sputtering target 10. [0033] Using the above formula, calculate the thermal resistance R B in the direction of the reference line r of the backing tube 12, the thermal resistance R J in the diameter direction of the bonding layer 13, and the diameter direction of the cylindrical sputtering target 11 The thermal resistance R T from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the liner tube 12 is within the above-mentioned range. Design the material and size of the liner tube 12 and the bonding layer 13 . However, in the above equations, the length l is considered. However, in the cylindrical sputtering target 10, the heat source is uniformly arranged in the longitudinal direction of the cylindrical sputtering target 11. The impedance R can be calculated as a single element in the aperture direction (reference line r direction). Therefore, in this specification, the length l in each of the above-mentioned equations is taken as 1, and the thermal resistance R is calculated. [0034] In a cylindrical embodiment of this aspect of the configuration as described above plating sputtering target 10, due to the liner tube reference line 12 in the direction r of the thermal resistance R B as 6.5 × 10 -5 K / W or less Therefore, the heat generated in the cylindrical sputtering target 11 can be efficiently transferred to the inner peripheral side of the gasket 12, and the melting of the bonding layer 13 made of the low melting point metal can be suppressed. Therefore, sputtering can be performed at a high power density, and the throughput of film formation can be improved. In addition, erosion continues through use, and even if the thickness of the cylindrical sputtering target material 11 is locally thinned, it becomes a sustainable user. [0035] In addition, in this embodiment, the thermal resistance in the diameter direction from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the liner tube 12 is set to 1.2×10 -4 K/W or less. The heat generated in the cylindrical sputtering target 11 can be efficiently transferred to the inner peripheral side of the spacer 12, and the temperature rise of the cylindrical sputtering target 11 can be suppressed. Therefore, it is possible to suppress the melting of the bonding layer 13 made of the low melting point metal. [0036] Furthermore, in the present embodiment, since the bonding strength between the bonding layer 13 and the liner tube 12 is 4 MPa or more, the cylindrical sputtering target 11 is reliably bonded by the bonding layer 13. As with the liner tube 12, the heat generated in the sputtering target 11 can be reliably transmitted to the liner tube 12 side, and furthermore, it is possible to suppress the melting of the bonding layer 13. [0037] In addition, in the present embodiment, since the Vickers hardness of the liner tube 12 is set to 100Hv or more, even when bending stress or the like acts on the cylindrical sputtering target 10, the liner can be suppressed. The tube 12 is deformed to reduce the load on the bonding layer 13. Therefore, even if the bonding layer 13 is softened due to temperature rise, there is no one pushing the bonding layer 13. [0038] The embodiments of the present invention have been described above, but the present invention is not limited to these, and can be appropriately changed without departing from the scope of the technical idea of the invention. In this embodiment, the cylindrical sputtering target shown in FIG. 1 has been exemplified, but it is not limited to this, and it is provided with: a sputtering target constituting a cylindrical shape, and bonding by a bonding layer The cylindrical sputtering target of the liner tube on the inner peripheral side of the cylindrical sputtering target may be used. [Examples] [0039] Hereinafter, the results of confirmation tests carried out to confirm the effects of the cylindrical sputtering target of the present invention will be described. [0040] In the embodiment, when it is considered that the bonding layer temperature T 3 of the cylindrical sputtering target reaches the highest temperature, it is simulated before the exchange of the cylindrical sputtering target. Specifically, the outer diameter of the cylindrical sputtering target r4 is the thickness of the cylindrical sputtering target, and the use efficiency of the cylindrical sputtering target is about 80%. Make settings. [0041] Prepare the cylindrical sputtering target material and the liner tube shown in Table 1, and join these circles by the method described in JP 2014-37619 through the bonding layer of the material shown in Table 1. Cylindrical sputtering target and liner tube are used to obtain cylindrical sputtering target. [0042] The cylindrical sputtering target shown in Table 1 has CuGa based Ga32mass%, residual Cu or a copper alloy that is a composition of unavoidable impurities, AZO based Al 2 O 3 1.0 mass%, and residual ZnO or used as It is inevitable that oxides are composed of impurities. [0043] Cu alloy liner piping system contains Co: 0.20mass%, P: 0.06mass%, Sn: 0.10mass% or more, Ni: 0.05mass%, Zn: 0.05mass%, and the residual Cu may be one of the unavoidable impurities The composition of the Cu alloy has undergone the following manufacturing conditions. Under the conditions of a processing temperature of 900°C before extrusion, a cooling start temperature of 870°C after extrusion, and a cross-sectional shrinkage rate of 96% after extrusion of the ingot with the above composition, the melt treatment of the ingot with the above composition is carried out. Hot push, get pushed element tube. Under the condition of 23% cross-sectional shrinkage from pushing to pulling out, cold drawing of the extruded tube is carried out, and after the heat treatment at 500°C for 3 hours, the Cu alloy lined tube is manufactured. When processing this backing tube, a Cu alloy backing tube is manufactured. [0044] However, the Cu alloy liner pipe shown in Table 1 uses a composition with a purity of 99.99 mass%. The Mo gasketed pipe shown in Table 1 has a purity of 99 mass%. The Al alloy liner pipe system shown in Table 1 is made from JIS A 2017. The Ti liner pipe system shown in Table 1 is composed of two types of JIS H 4600. [0045] (Vickers hardness) The hardness of the liner tube is measured in accordance with JIS Z 2244. Specifically, a sample for hardness measurement is taken from a liner tube, the measurement surface is polished, and the hardness is measured with a micro Vickers hardness tester. Table 1 shows the hardness of the liner tube. [0046] (Thermal conductivity) The thermal conductivity of the backing tube, the bonding layer, and the cylindrical sputtering target is measured in accordance with JIS R 1611. A sample for thermal conductivity measurement was collected from a backing tube, a bonding layer, and a cylindrical sputtering target, the measurement surface was polished, and the thermal conductivity was measured by the laser flash method. [0047] (Thermal impedance) The thermal impedance in the direction of the reference line r of the cylindrical sputtering target was calculated by using the value of the above-mentioned thermal conductivity through the method described in the embodiment. Table 1 shows the thermal resistance in the diameter direction of the gasket tube and the thermal resistance in the diameter direction from the outer peripheral surface of the bonding layer to the inner peripheral surface of the gasket tube. [0048] (The bonding strength between the bonding layer and the liner tube) As shown in Figure 3(a), using a wire cutter or a band saw, etc., cut out a cylindrical shape from the side of the obtained cylindrical sputtering target sample. As shown in Fig. 3(b), the end surfaces (outer and inner peripheral surfaces) of the sample were cut out to make flat surfaces, and the outer peripheral surface of the sample was cut through the turntable processing to obtain a measurement sample of φ20 mm. The bonding part of the sputtering target material and the bonding layer of the measurement sample was fixed when the adhesive was applied from the outside. The tensile strength of this measurement sample was measured using the tensile tester INSTRON5984 (manufactured by INSTRON JAPAN). However, the maximum load is 150kN and the displacement speed is 0.1mm/min. This tensile strength is used as the bonding strength between the bonding layer and the liner tube. Table 1 shows the measured bonding strength. [0049] In addition, using these cylindrical sputtering targets, pre-sputtering is first performed. The pre-sputtering conditions are the full pressure of 0.8 Pa, and the sputtering output is 1/10, 1/5, 1/3, 1/2 of the sputtering output shown in Table 2, and sputtering is performed for 5 minutes each. After that, sputtering was performed under the conditions shown in Table 2 for 8 hours, and it was confirmed whether the bonding layer was melted out after sputtering. [0050] The melting out of the bonding layer that did not contact the full end surface of the cylindrical sputtering target was evaluated as "A". In the full end of the cylindrical sputtering target, the direction of the axis O For the melting of the bonding layer of less than 1mm, there are 2 or less places that are evaluated as "B". In the full end surface of the cylindrical sputtering target, there are 3 melting of the bonding layer of the axis O direction of less than 1mm. The above or those who confirmed that there is a bonding layer of 1mm or more melted out are evaluated as "C", and those who have confirmed the deviation of the sputtering target are evaluated as "D". [0051] [0052] [0053] For the comparative example where the thermal resistance in the diameter direction of the liner tube is larger than that of the present invention, the result of the sputtering test confirmed that the bonding layer was melted. In this regard, the thermal resistance in the diameter direction of the liner tube is regarded as an example of the present invention within the scope of the present invention, and the melting of the bonding layer is suppressed. In addition, in the example of the present invention, the bonding strength between the bonding layer and the backing tube was 4 MPa or more, and it was confirmed that the sputtering target and the backing tube were reliably bonded by the bonding layer. However, when the hardness of the liner tube is 100 Hv or more, the melting of the bonding layer is particularly suppressed. [Industrial Applicability] [0054] According to the cylindrical sputtering target of the present invention, even if the power density during sputtering is set to increase, or the erosion continues through use, the bonding layer can be suppressed. It melts out, and it can be stabilized for film formation.
