KR102357819B1 - Cylindrical Sputtering Target - Google Patents

Abstract

The cylindrical sputtering target of this invention is equipped with the target material which makes a cylindrical shape, and the backing tube joined through the bonding layer on the inner peripheral side of this target material, The thermal resistance in the radial direction in the said backing tube is 6.5x10. ^-5 K/W or less.

Description

Cylindrical Sputtering Target

This invention relates to the cylindrical sputtering target provided with the sputtering target material which comprises a cylindrical shape, and the backing tube joined through the bonding layer on the inner peripheral side of this sputtering target material.

As a means for forming a thin film such as a metal film or an oxide film, a sputtering method using a sputtering target is widely used.

Generally, a sputtering target has a structure in which the sputtering target material formed according to the composition of the thin film to form into a film, and the backing material which hold|maintains this sputtering target material were joined through the bonding layer.

As a bonding material which comprises the bonding layer interposed between a sputtering target material and a backing material, In or a Sn-Pb alloy etc. are mentioned, for example. In order to reduce workability and deformation at the time of bonding, the melting point of the bonding material constituting these bonding layers is, for example, 300° C. or less, and a material having a relatively low melting point is used.

As a sputtering target mentioned above, a flat-type sputtering target and a cylindrical sputtering target are proposed, for example.

In a planar sputtering target, it becomes the structure in which the flat target material and the flat backing material (backing plate) were laminated|stacked.

Moreover, in a cylindrical sputtering target, as described in patent document 1, for example, it becomes the structure in which the cylindrical backing material (backing tube) was joined through the bonding layer on the inner peripheral side of a cylindrical target material. Moreover, in order to respond to the film-forming with respect to a large-sized board|substrate, what set the axial direction length of the target material of a cylindrical shape target to comparatively long, for example to 0.5 m or more is proposed.

In a planar sputtering target, since the use efficiency of a target material was as low as about 20 to 30 % and continuous sputtering could not be performed, it was not able to form into a film efficiently.

On the other hand, the cylindrical sputtering target has a sputtering surface on its outer circumferential surface, and sputtering is performed while rotating the target, so that it is suitable for continuous film formation compared to the case where a flat sputtering target is used. Since it spreads by , it has the advantage that the use efficiency of a cylindrical sputtering target material becomes 60 to 80 % high.

In addition, in the cylindrical sputtering target, it is configured to be cooled from the inner periphery side of the backing tube, and since the erosion portion spreads in the circumferential direction as described above, the temperature rise of the cylindrical sputtering target material can be suppressed, , the power density at the time of sputtering can be raised, and it becomes possible to further improve the throughput of film formation.

Japanese Patent Laid-Open No. 2014-037619

However, in recent years, in a liquid crystal panel, a solar cell panel, etc., since further cost reduction is calculated|required, it is calculated|required to further increase the power density at the time of sputtering and to further improve the throughput of film formation.

Here, in the above-mentioned cylindrical sputtering target, the surface temperature of the cylindrical sputtering target material rises at the time of sputtering by an additional increase in power density, and the bonding layer comprised with low melting-point metals, such as In, will elute. had a problem. For this reason, in the conventional cylindrical sputtering target, the raise of the additional power density was not realizable.

Moreover, in the conventional cylindrical sputtering target, even if there is no problem at the beginning of use, erosion advances as use advances, the thickness of a sputtering target material decreases locally, and the joining located on the inner peripheral side of a cylindrical sputtering target material. There was a fear that the layer would be eluted.

However, from the viewpoint of further cost reduction, in order to further improve the use efficiency of the cylindrical sputtering target material and reduce the exchange frequency of the cylindrical sputtering target, a cylindrical sputtering target that can be used even when erosion has been performed is required.

In addition, for further cost reduction in liquid crystal panels, solar cell panels, etc., the axial length of the cylindrical sputtering target is increased due to the enlargement of the substrate to be formed, but the size in the radial direction is not significantly changed. For this reason, the heat generated during sputtering could not be efficiently dissipated to the inner periphery of the backing tube, the temperature of the cylindrical sputtering target was likely to rise, and there was a risk that the bonding layer would also be leached.

In addition, the temperature rise of the above cylindrical sputtering target is cooled by flowing cooling water inside the backing tube, but depending on the sputtering apparatus, when the cooling water used for cooling the cylindrical sputtering target is used for cooling another cylindrical sputtering target Because there is, the temperature of the whole cylindrical sputtering target may rise easily, and the bonding layer in the inner side of a cylindrical sputtering target material becomes easy to elute.

This invention was made in view of the above circumstances, and even when the power density at the time of sputtering is set high or when erosion has progressed due to use, elution of the bonding layer can be suppressed and film formation is stable. It aims at providing the cylindrical sputtering target which can be implemented.

In order to solve the above problem, a cylindrical sputtering target according to an aspect of the present invention is a cylindrical sputtering target comprising a sputtering target material having a cylindrical shape, and a backing tube joined to the inner periphery of this sputtering target material through a bonding layer. As, it is characterized in that the thermal resistance in the radial direction of the backing tube is 6.5 × 10 ^-5 K/W or less.

According to the cylindrical sputtering target which is an aspect of this invention which became such a structure, since the thermal resistance in the radial direction in the said backing tube is 6.5 x 10 ^-5 K/W or less, it is generated in a cylindrical target material. By dissipating heat efficiently to the said backing tube side, the temperature rise of a cylindrical sputtering target can be suppressed, and elution of a bonding layer can be suppressed. Therefore, sputtering can be performed with a high power density, and the throughput of film formation can be improved. Moreover, even if erosion advances by use and the thickness of a cylindrical sputtering target material becomes thin locally, it becomes possible to perform sputtering film-forming.

Here, in the cylindrical sputtering target of one aspect of the present invention, it is preferable that the thermal resistance in the radial direction from the outer peripheral surface of the bonding layer to the inner peripheral surface of the backing tube is 1.2 × 10 ^-4 K/W or less.

In this case, heat conduction is accelerated|stimulated in a bonding layer and a backing tube, the heat which generate|occur|produced in the cylindrical sputtering target material can be transmitted more efficiently to the said backing tube side, and elution of a bonding layer can be suppressed.

Moreover, in the cylindrical sputtering target which is an aspect of this invention, it is preferable that the bonding strength of the said bonding layer and the said backing tube is 4 Mpa or more, and it is more preferable that it is 8 Mpa or more.

In this case, the sputtering target material and the backing tube are reliably joined through the bonding layer, and heat generated from the cylindrical sputtering target material can be reliably transmitted to the backing tube side, and elution of the bonding layer can be suppressed. can

Moreover, in the cylindrical sputtering target which is an aspect of this invention, as for the said backing tube, it is preferable that Vickers hardness is 100 Hv or more.

In this case, since the hardness of a backing tube is sufficiently ensured, even when bending stress etc. act on a cylindrical sputtering target, it can suppress that a backing tube deform|transforms, and the load to a bonding layer can be reduced. Therefore, even when the bonding layer is softened by the temperature rise, the bonding layer is not pushed out.

Moreover, in the cylindrical sputtering target which is an aspect of this invention, it is preferable that the said backing tube is comprised with a copper alloy.

In this case, since the backing tube is comprised by the copper alloy, it is excellent in thermal conductivity, and the thermal resistance in the radial direction in the said backing tube can be made low.

As described above, according to the present invention, elution of the bonding layer can be suppressed and film formation can be performed stably even when the power density at the time of sputtering is set high or when erosion proceeds due to use. It becomes possible to provide a cylindrical sputtering target.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic explanatory drawing of the cylindrical sputtering target which concerns on one Embodiment of this invention. (a) is a cross-sectional view perpendicular to the axis line (O) direction, (b) is a cross-sectional view along the axis line (O).
It is explanatory drawing which shows the calculation method of the thermal resistance in a radial direction.
It is explanatory drawing which shows the measuring method of the bonding strength of a bonding layer and a backing tube.

EMBODIMENT OF THE INVENTION Below, the cylindrical sputtering target which is embodiment of this invention is demonstrated with reference to attached drawing.

As shown in FIG. 1, the cylindrical sputtering target 10 which concerns on this embodiment is the sputtering target material 11 which comprises the cylindrical shape extended along the axis line O, and the inner peripheral side of this sputtering target material 11. It is provided with the cylindrical backing tube 12 inserted in.

And the cylindrical sputtering target material 11 and the backing tube 12 are joined through the bonding layer 13.

The sputtering target material 11 has a composition according to the composition of the thin film to form into a film, and is comprised from various metals, oxides, etc.

Moreover, as for the size of this cylindrical sputtering target material 11, the inside diameter (d _T ) is 0.12 m ≤ d _T ≤ 0.14, for example in the range of 0.15 m ≤ D _T ≤ 0.17 m of outer diameter ( _DT ). In the range of m, the length (l _T ) in the direction of the axis (O) is in the range of 0.5 m ≤ l _T ≤ 3 m.

The backing tube 12 is formed in order to hold|maintain the cylindrical sputtering target material 11, and to ensure mechanical strength, Furthermore, electric power supply to the cylindrical sputtering target material 11, and cylindrical sputtering It has the same effect|action as cooling of the target material 11. For this reason, as the backing tube 12, it is calculated|required that it is excellent in mechanical strength, electrical conductivity, and thermal conductivity, For example, it is comprised from stainless steel, copper, copper alloys, such as SUS304, and titanium. Specifically, for example, Co: 0.10 mass% or more and 0.30 mass% or less, P: 0.030 mass% or more and 0.10 mass% or less, Sn: 0.01 mass% or more and 0.50 mass% or less, Ni: 0.02 mass% or more and 0.10 mass% or less , Zn: 0.01 mass% or more and 0.10 mass% or less, and the balance may be composed of a copper alloy having a composition in which Cu or an unavoidable impurity.

Moreover, in this embodiment, as for the backing tube 12, Vickers hardness is 100 Hv or more. About this Vickers hardness, it can adjust with the material of the backing tube 12, the heat processing conditions in a manufacturing process, etc. Although it is preferable that the Vickers hardness of the backing tube 12 is 120 Hv or more, it is not limited to this. The Vickers hardness of the backing tube 12 is good also as 250 Hv or less.

Moreover, in this embodiment, it is preferable that the electrical conductivity of the backing tube 12 is 60 %IACS or more. Although it is more preferable that the electrical conductivity of the backing tube 12 is 70 %IACS or more, it is not limited to this. The electrical conductivity of the backing tube 12 is good also as 90 %IACS or less.

Moreover, it is preferable that the thermal conductivity of the backing tube 12 is 200 W/(m*K) or more. Although it is preferable that the thermal conductivity of the backing tube 12 is 300 W/(m*K) or more, it is not limited to this. The thermal conductivity of the backing tube 12 is good also as 430 W/(m*K) or less.

For example, in the above-mentioned copper alloy containing Co, P, Sn, Ni, and Zn, electrical conductivity can be 60 to 80 %IACS, and thermal conductivity can be 300 W/(m*K) or more.

Here, the size of the backing tube 12 is, for example, the outer diameter ( _{DB) is within the range of 0.12 m ≤ D B ≤} 0.14 m, the inner diameter (d _B ) is within the range of 0.11 m ≤ d _B ≤ 0.13 m The inner and axis O direction length l _B is within the range of 0.5 m ≤ l _B ≤ 3 m.

The bonding layer 13 interposed between the cylindrical sputtering target material 11 and the backing tube 12 is formed when the cylindrical sputtering target material 11 and the backing tube 12 are joined using a bonding material. do.

The bonding material constituting the bonding layer 13 is composed of, for example, a low-melting-point metal such as In having a melting temperature of 157°C or less. Moreover, the thickness t of the bonding layer 13 is in the range of 0.0005 m<=t<=0.004 m.

Moreover, in the cylindrical sputtering target 10 which is this embodiment, the bonding strength of the bonding layer 13 and the backing tube 12 is 4 Mpa or more. In addition, this bonding strength is obtained by laminating the sputtering target material 11 and the backing tube 12 in a state in which the joint of the cylindrical sputtering target material 11 and the bonding layer 13 laminated in the radial direction is fixed with an adhesive. It is the tensile strength at the time of pulling in a direction (diameter direction). The bonding strength of the bonding layer 13 and the backing tube 12 is good also as 26 Mpa or less. In the bonding process of the cylindrical sputtering target material 11 and the backing tube 12 by a bonding material, a heating temperature becomes in the range of 170 degreeC or more and 250 degrees C or less, and the holding time in this heating temperature is 10 minutes or more and 120 minutes. It is within the following range. Moreover, in a bonding process, it is the method of Unexamined-Japanese-Patent No. 2014-37619, and it is preferable to pour a bonding material into the clearance gap between the sputtering target material 11 and the backing tube 12.

And in this embodiment, the thermal resistance RB of the radial direction (reference line (r) direction in FIG. 1(a)) of the backing tube 12 is _6.5x10 ^-5 K/W or less . Specifically, by considering the thermal conductivity of the backing tube 12 and the thickness in the reference line r direction (difference between the outer diameter and the inner diameter), the thermal resistance _RB in the radial direction in the backing tube 12 is 6.5 × 10 ^-5 K/W or less.

In this embodiment, the thermal conductivity of the backing tube 12 is 200 W/(m*K) or more, and the size of the backing tube 12 is designed by this. The thermal resistance (RB ) of the backing tube is preferably 5.0 × 10 ^-5 _K /W or less, but is not limited thereto. The thermal resistance (RB ) of the backing tube may be 2.5 × 10 ^-5 _K /W or more.

Moreover, in this embodiment, the thermal resistance of the reference line (r) direction from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 is 1.2x10 ^-4 K/W or less. Specifically, the thermal conductivity of the backing tube 12 and the thickness in the reference line (r) direction (difference between the outer diameter and the inner diameter), the thermal conductivity of the bonding layer 13 and the thickness in the reference line (r) direction (difference between the outer diameter and the inner diameter) By taking this into consideration, the thermal resistance in the direction of the reference line (r) from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 is 1.2 × 10 ^-4 K/W or less. The thermal resistance in the direction of the reference line (r) from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 is preferably 1.1 × 10 ^-4 K/W or less, but is not limited thereto. The thermal resistance in the direction of the reference line (r) from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 may be 1.0 × 10 ^-6 K/W or more.

Here, the calculation method of the thermal resistance in the radial direction in the cylindrical sputtering target 10 is demonstrated using FIG.

The temperature of the inner peripheral surface of the backing tube 12 is T ₁ , the temperature of the outer peripheral surface of the backing tube 12 (the inner peripheral surface of the bonding layer 13) is T ₂ , the inner peripheral surface of the sputtering target material 11 (of the bonding layer 13) Let the temperature of the outer peripheral surface be T3 _and the temperature of the outer peripheral surface of the sputtering target material ₁₁ shall be T4.

In addition, the radius to the inner peripheral surface of the backing tube 12 is r ₁ , the radius to the outer peripheral surface of the backing tube 12 (the inner peripheral surface of the bonding layer 13) is r ₂ , and the inner peripheral surface of the sputtering target material 11 (bonding layer) Let the radius to the outer peripheral surface of (13) be r3 and the radius to the outer peripheral surface of the sputtering target material ₁₁ shall be _r4 .

Then, the backing tube 12, the bonding layer 13, and the thermal resistance _Ri of each layer of the cylindrical sputtering target material 11 are represented by the following formula|equation.

Here, λ ₁ is the thermal conductivity of the backing tube 12, λ ₂ is the thermal conductivity of the bonding layer 13, λ ₃ is the thermal conductivity of the cylindrical sputtering target material 11, l is the cylindrical sputtering target material 11 ) is the length (l _T in FIG. 1 ). When a cylindrical sputtering target is comprised from the some cylindrical sputtering target material 11, it becomes the sum total of the length of these some cylindrical sputtering target 11.

And the passage amount Q of the heat|fever in the whole cylindrical sputtering target is represented by the following formula|equation, and the denominator of this formula turns into thermal resistance R _total of the cylindrical sputtering target 10 whole.

Using Formula 1 mentioned above, the thermal resistance (RB) of the reference line (r) direction in the backing tube 12, the thermal resistance ( _{R J} ) of the radial direction in the bonding layer 13, a cylinder _The thermal resistance (RT) in the radial direction in the sputtering target material 11 of the shape, the thermal resistance in the radial direction from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 is calculated, The material and size of the backing tube 12 and the bonding layer 13 are designed so that it may become in the range.

In addition, in each formula mentioned above, although length 1 is considered, in the cylindrical sputtering target 10, since a heat source is arrange|positioned uniformly with respect to the longitudinal direction of the cylindrical sputtering target material 11, , the thermal resistance R may be calculated in one dimension in the radial direction (reference line (r) direction). Then, in this specification, the length 1 in each formula mentioned above is 1, and the thermal resistance R is calculated.

In the cylindrical sputtering target 10 which is this embodiment which became the structure as mentioned above, the thermal resistance RB in the reference line r direction in the backing tube 12 is 6.5 x 10 ^-5 _K /W or less. Since it has become, the heat which generate|occur|produced from the cylindrical sputtering target material 11 can be efficiently transmitted to the inner peripheral side of the backing tube 12, and elution of the bonding layer 13 which consists of a low-melting-point metal can be suppressed. Therefore, sputtering can be performed with a high power density, and the throughput of film formation can be improved. Moreover, even if erosion advances by use and the thickness of the cylindrical sputtering target material 11 becomes thin locally, it becomes possible to continue using.

Moreover, in this embodiment, since the thermal resistance of the radial direction from the outer peripheral surface of the bonding layer 13 to the inner peripheral surface of the backing tube 12 is 1.2 x 10 ^-4 K/W or less, a cylindrical sputtering target The heat generated from the ash 11 can be more efficiently transmitted to the inner peripheral side of the backing tube 12 , and the temperature rise of the cylindrical sputtering target material 11 can be suppressed. Therefore, the elution of the bonding layer 13 which consists of a low melting-point metal can be suppressed.

In addition, in this embodiment, since the bonding strength of the bonding layer 13 and the backing tube 12 is 4 MPa or more, the cylindrical sputtering target material 11 and the backing tube 12 are a bonding layer ( It is joined reliably through 13), the heat which generate|occur|produced in the sputtering target material 11 can be transmitted reliably to the backing tube 12 side, and elution of the bonding layer 13 can be suppressed.

In addition, in this embodiment, since the Vickers hardness of the backing tube 12 is 100 Hv or more, even when bending stress etc. act on the cylindrical sputtering target 10, the backing tube 12 is deformed can be suppressed, and the load to the bonding layer 13 can be reduced. Therefore, even when the bonding layer 13 is softened by the temperature rise, the bonding layer 13 is not pushed out.

As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.

In this embodiment, although the cylindrical sputtering target shown in FIG. 1 was mentioned and demonstrated as an example, it is not limited to this, The sputtering target material which makes a cylindrical shape, and this cylindrical sputtering target material were joined via a bonding layer on the inner peripheral side. What is necessary is just a cylindrical sputtering target provided with a backing tube.

Example

Hereinafter, the result of the confirmation test performed in order to confirm the effect of the cylindrical sputtering target which concerns on this invention is demonstrated.

In the Example, it is simulated just before replacement of the cylindrical sputtering target, in which the bonding layer temperature (T3) of the cylindrical sputtering target is considered to reach the maximum temperature. Specifically, the outer diameter r4 of the cylindrical sputtering target material is set so that the thickness of the cylindrical sputtering target material decreases on average, and the use efficiency of the cylindrical sputtering target is about 80%.

A cylindrical sputtering target material and a backing tube shown in Table 1 are prepared, and these cylindrical sputtering target materials and a backing tube are prepared through a bonding layer of the material shown in Table 1 in Japanese Patent Application Laid-Open No. 2014-37619. It joined by this method, and the cylindrical sputtering target was obtained.

CuGa of the cylindrical sputtering target material shown in Table 1 is a copper alloy having a composition containing 32 mass% of Ga, the remainder Cu or an unavoidable impurity, AZO is an oxide having a composition containing Al ₂ O ₃ 1.0 mass%, the balance ZnO or an unavoidable impurity am.

The Cu alloy backing tube contains Co: 0.20 mass%, P: 0.06 mass%, Sn: 0.10 mass% or more, Ni: 0.05 mass%, Zn: 0.05 mass%, and the balance is Cu or unavoidable impurities. of Cu alloy, and has been subjected to the following manufacturing conditions. Under the conditions of a pre-extrusion processing temperature of 900°C, a cooling start temperature of 870°C after extrusion, and a section shrinkage rate of 96% after extrusion from the ingot of the above-mentioned composition, hot extrusion including solution treatment of the ingot of the above-mentioned composition is performed. Thus, an extrusion element pipe is obtained. On the conditions of 23% of cross-sectional shrinkage rate from extrusion to the end of drawing, cold drawing of an extrusion element pipe is performed, and then, a Cu alloy backing tube element pipe is manufactured by performing heat treatment for 3 hours at 500 degreeC after that, and this backing tube element pipe By processing of Cu alloy backing tube is manufactured.

In addition, for the backing tube made from Cu shown in Table 1, the thing with a purity of 99.99 mass % was used.

The Mo backing tube shown in Table 1 was made into the thing of 99 mass % purity.

The Al alloy backing tube shown in Table 1 was made to consist of JIS A 2017.

The Ti backing tube shown in Table 1 was made to consist of 2 types of JIS H4600.

(Vickers hardness)

The hardness of the backing tube was measured based on JISZ2244. The sample for hardness measurement was specifically, extract|collected from a backing tube, the measurement surface was grind|polished, and hardness measurement was performed with the micro Vickers hardness meter. Table 1 shows the hardness of the backing tube.

(thermal conductivity)

The thermal conductivity of a backing tube, a bonding layer, and a cylindrical sputtering target material was measured based on JISR1611. The sample for thermal conductivity measurement was extract|collected from a backing tube, a bonding layer, and a cylindrical sputtering target material, the measurement surface was grind|polished, and the thermal conductivity measurement was performed by the laser flash method.

(thermal resistance)

By the method described in the embodiment, the thermal resistance in the reference line (r) direction of the cylindrical sputtering target was calculated using the value of the thermal conductivity. Table 1 shows the thermal resistance in the radial direction in the backing tube and the thermal resistance in the radial direction from the outer peripheral surface of the bonding layer to the inner peripheral surface of the backing tube.

(bonding strength between bonding layer and backing tube)

As shown to Fig.3 (a), the cylindrical sample was cut|disconnected from the side surface of the obtained cylindrical sputtering target using a wire cut or a band saw. The cross section (outer peripheral surface and inner peripheral surface) of this sample was cut out as shown in FIG.3(b), and while setting it as a flat surface, the outer peripheral surface of the sample was cut by lathe processing, and the measurement sample of phi 20mm was obtained. The junction part of the sputtering target material of a measurement sample and a bonding layer was fixed by apply|coating an adhesive agent from the outside. The tensile strength of this measurement sample was measured using the tensile tester INSTORON5984 (made by Instron Japan). In addition, the maximum load of 150 kN and the displacement rate were 0.1 mm/min. This tensile strength was made into the bonding strength of a bonding layer and a backing tube. The measured bonding strength is shown in Table 1.

And using these cylindrical sputtering targets, first pre-sputtering was performed. Pre-sputtering conditions are a voltage of 0.8 Pa, and sputtering is performed for each 5 minutes with the output of 1/10, 1/5, 1/3, 1/2 of the sputtering output shown in Table 2. Then, sputtering for 8 hours was implemented on the conditions shown in Table 2, and the presence or absence of elution of the bonding layer was confirmed after sputtering.

"A" indicates that there is no elution of the bonding layer in contact with the entire cross-section of the cylindrical sputtering target material. In the entire cross-section of the cylindrical sputtering target material, the elution of the bonding layer of less than 1 mm in the axial (O) direction is two. "B" for the point less than or equal to the point, in the entire cross section of the cylindrical sputtering target material, elution of the bonding layer of less than 1 mm in the axial (O) direction was confirmed at three points or more or the elution of the bonding layer of 1 mm or more was confirmed " C" and the thing by which the shift|offset|difference of a sputtering target material was confirmed evaluated as "D".

About the comparative example in which the thermal resistance of the radial direction in a backing tube is larger than this invention, elution of the bonding layer was confirmed as a result of a sputtering test.

On the other hand, in the example of this invention in which the thermal resistance of the radial direction in a backing tube became in the range of this invention, the elution of the bonding layer was suppressed.

Moreover, in the example of this invention, the bonding strength of a bonding layer and a backing tube was 4 Mpa or more, and it was confirmed that the sputtering target material and the backing tube are reliably bonded through the bonding layer.

Moreover, especially in what made the hardness of a backing tube 100 Hv or more, the elution of the bonding layer was suppressed.

Industrial Applicability

According to the cylindrical sputtering target of the present invention, elution of the bonding layer can be suppressed and film formation can be performed stably, even when the power density at the time of sputtering is set high or when erosion proceeds due to use. Do.

10: cylindrical sputtering target
11: cylindrical sputtering target material
12 : backing tube
13: bonding layer

Claims (5)

A cylindrical sputtering target comprising: a sputtering target material having a cylindrical shape; and a backing tube joined to an inner peripheral side of the sputtering target material through a bonding layer,
Thermal resistance in the radial direction of the backing tube is 6.5 × 10 ^-5 K/W or less,
Thermal resistance in the radial direction from the outer peripheral surface of the bonding layer to the inner peripheral surface of the backing tube is 1.2 × 10 ^-4 K/W or less,
The backing tube is a cylindrical sputtering target, characterized in that the Vickers hardness is 100 Hv or more. The method of claim 1,
A cylindrical sputtering target, characterized in that the bonding strength between the bonding layer and the backing tube is 4 MPa or more. 3. The method of claim 1 or 2,
Said backing tube is comprised by the copper alloy, The cylindrical sputtering target characterized by the above-mentioned. delete delete

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