JP7101717B2 - Sputtering target and its manufacturing method - Google Patents

Description

The present invention relates to a sputtering target and a method for manufacturing the same. In particular, it relates to the surface roughness of the sintered body constituting the target member.

In recent years, as a sputtering device for forming a metal thin film or a metal oxide thin film on a large glass substrate, a sputtering device using a cylindrical sputtering target has been developed. The cylindrical sputtering target is a target for sputtering obtained by processing a sintered body made of a target portion material into a hollow cylindrical shape and joining it to a base material called a backing plate or a backing tube.

Such a cylindrical sputtering target has the advantages of higher target utilization efficiency, less generation of erosion, and less generation of particles due to delamination of deposits, as compared with a flat plate type sputtering target. In particular, the advantage of less particle generation is very advantageous in reducing the occurrence of arcing due to the redeposition of particles onto the target.

For example, when manufacturing a cylindrical sputtering target for forming ITO (indium tin oxide), a hollow sintered body (ceramics) obtained by mixing and sintering indium oxide powder and tin oxide powder is used. It is processed into a cylindrical shape and joined to a cylindrical base material (backing tube).

However, it is difficult to manufacture a target member made of ceramics in a long shape. Therefore, in order to increase the length (large area) of the cylindrical sputtering target, a plurality of cylindrical sintered bodies are formed, and they are continuously arranged and joined to the base material to form a long cylinder. A technique for realizing a type sputtering target has been developed (Patent Document 1).

When a plurality of target members are arranged without gaps with respect to the base material, the target members may expand and contract due to the heat during sputtering, and the target members may collide with each other, resulting in cracking or chipping. Therefore, in general, when a plurality of target members are joined to a base material, they are arranged at a certain interval between the target members.

Japanese Unexamined Patent Publication No. 7-228967

However, as a result of diligent research by the present inventors, when a gap is provided between the target members, a thin film is redeposited in the gap by sputtering (the sputtered target component does not reach the substrate and is re-deposited on the target member. It was found that when a certain amount of adhesion occurs, it may enter the plasma, which is being discharged in a stable state. As a result, it was found that the potential balance in the plasma was disturbed, local charge concentration occurred, and accidental arcing occurred.

An object of the present invention is to provide a sputtering target capable of suppressing the occurrence of arcing during the above-mentioned sputtering and improving the yield of a device manufacturing process using a sputtering process.

The sputtering target according to the embodiment of the present invention is a plurality of target members made of ceramics bonded to a base material made of metal via a joining material made of a low melting point metal having a melting point of 300 ° C. or lower. The surface roughness (Ra) on the surface of the base material in contact with the bonding material is 1.8 μm or more (preferably 1.8 μm or more and 3.0 μm or less, more preferably 1.8 μm or more and 2.5 μm or less). The plurality of target members have a hollow cylindrical shape, and when they are joined to the base material so as to surround the outer peripheral surface of the base material, they face each other with a predetermined distance from the adjacent target members. It has a circular surface, and the surface roughness (Ra) on the circular surface is 1.0 μm or less. The surface roughness (Ra) is preferably 0.05 μm or more and 1.0 μm or less.

The method for manufacturing a sputtering target according to an embodiment of the present invention is a hollow cylinder made of ceramics, which is joined to a base material made of metal via a bonding material made of a low melting point metal having a melting point of 300 ° C. or lower. The circular surfaces of the plurality of target members having a shape are polished so that the surface roughness (Ra) is 2.0 μm or more and 8.0 μm or less, and the surface of the base material in contact with the bonding material is surface roughness (Ra). ) Is 1.8 μm or more (preferably 1.8 μm or more and 3.0 μm or less, more preferably 1.8 μm or more and 2.5 μm or less). It is characterized in that the plurality of target members are joined to the base material via the bonding material so that the circular surfaces face each other and surround the outer peripheral surface of the base material. The surface roughness (Ra) is preferably 0.05 μm or more and 1.0 μm or less.

The target member may be composed of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide) or IGZO (Indium-Gallium-Tin-Oxide).

The surface roughness (Ra) shall be measured using a non-contact type surface roughness measuring device according to the ANSI standard. The surface roughness is measured at 6 points on each end surface of the target member at intervals of 60 ° (12 points per target member), and the weighted average value of all the measured values is taken as the surface roughness of the target member.

It is a perspective view which shows the structure of the sputtering target which concerns on one Embodiment of this invention. It is sectional drawing which shows the structure of the sputtering target which concerns on one Embodiment of this invention. It is sectional drawing which shows the vicinity of the gap between the target members in the sputtering target which concerns on one Embodiment of this invention. It is a process flow diagram which shows the manufacturing method of the sputtering target which concerns on one Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be carried out in various embodiments without departing from the gist thereof, and is not construed as being limited to the description contents of the embodiments exemplified below.

Further, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example and the interpretation of the present invention. Is not limited to. Further, in this specification and each figure, elements having the same functions as those described with respect to the above-mentioned figures may be designated by the same reference numerals, and duplicate description may be omitted.

<Structure of sputtering target>
FIG. 1 is a perspective view showing the configuration of a sputtering target according to an embodiment of the present invention. Further, FIG. 2 is a cross-sectional view showing the configuration of the sputtering target according to the embodiment of the present invention.

In this embodiment, a cylindrical sputtering target is exemplified. The cylindrical sputtering target 100 according to the present embodiment includes a base material 101 and a plurality of target members 102a and 102b. The target members 102a and 102b are joined to the base material 101 via the joining material 103, respectively. At this time, the joining material 103 is provided so as to fill the gap provided between the base material 101 and the target members 102a and 102b.

The sputtering target 100 according to the present embodiment is characterized by a sintered body constituting a plurality of target members 102a and 102b. Specifically, the target members 102a and 102b each have a circular surface 104 facing the adjacent target member at a predetermined distance, and the surface roughness Ra on the circular surface 104 is 1.0 μm or less (preferably). , 0.05 μm or more and 1.0 μm or less). This point will be described later.

The plurality of target members 102a and 102b are provided so as to surround the outer peripheral surface of the base material 101. It is preferable that the plurality of target members 102a and 102b are provided coaxially or substantially coaxially with the central axis of the base material 101. With such a configuration, when the cylindrical sputtering target 100 is mounted on the sputtering apparatus and rotated around the base material 101, the distance between the target members 102a and 102b and the surface to be filmed (sample substrate) is constant. Can be kept in.

In the cylindrical sputtering target 100, when a plurality of cylindrical sputtering target members 102a and 102b are mounted on the base material 101, the target members 102a and 102b are arranged at predetermined intervals, respectively. The gap may be 1 mm or less, for example, 0.1 to 0.5 mm. By arranging the plurality of target members 102a and 102b at predetermined intervals in this way, it is possible to prevent damage due to the target members colliding with each other.

The cylindrical sputtering target 100 of the present embodiment can be a long sputtering target having a length of 100 mm or more by joining a plurality of target members 102 to the base material 101 with a joining material 103.

<Base material>
The base material 101 preferably has an outer surface shape that follows the inner surface of the target members 102a and 102b having a hollow cylindrical shape. As described above, the outer diameter of the base material 101 is slightly smaller than the inner diameter of each of the target members 102a and 102b, and is adjusted so that a gap is formed when both are coaxially overlapped. A joining material 103 is provided in this gap.

Each of the target members 102a and 102b is heated by ion irradiation at the time of film formation by sputtering, and the temperature rises. In order to suppress the temperature rise of the target members 102a and 102b during the film formation by sputtering, it is preferable to make the base material 101 function as a coolant (heat sink) for the target members 102a and 102b. For example, it is possible to form the base material 101 as a hollow structure so that the refrigerant flows inside the base material 101. Therefore, as the base material 101, it is preferable to use a material having good conductivity and thermal conductivity.

At the same time, the base material 101 is preferably a metal that has good wettability with the bonding material 103 and can obtain high bonding strength. From the above, it is preferable to use, for example, copper (Cu) or titanium (Ti), or a copper alloy or titanium alloy or stainless steel (SUS) as the material constituting the base material 101. As the copper alloy, an alloy containing copper (Cu) as a main component, such as chromium copper, can be applied. Further, if titanium (Ti) is used as the base material 101, a lightweight and rigid base material can be obtained.

The base material 101 is not only formed of a simple substance metal or a metal alloy, but may also have a coating film made of another metal on the surface of the metal base material. For example, a metal film containing titanium (Ti), copper (Cu), silver (Ag), nickel (Ni), or the like may be formed.

Since the cylindrical sputtering target 100 rotates while being irradiated with ions only on a part of the surface, the ions are not irradiated on the entire surface of the target members 102a and 102b during sputtering. A temperature difference will occur between the irradiated surface and the back surface thereof. However, since the base material 101 has a cooling function, it is possible to suppress the temperature rise of the target members 102a and 102b, and also to suppress the influence of the thermal strain due to the above-mentioned temperature difference.

By the way, in the case of a cylindrical sputtering target, the molten bonding material 103 is injected into the space between the base material 101 and the target members 102a and 102b, and then solidified through a cooling process to bond the two. Therefore, since the base material 101 is inserted into the hollow portion of the hollow cylindrical target members 102a and 102b, the space spacing between the base material 101 and the target members 102a and 102b is adjusted in the joining process. I can't. Therefore, it is desirable that the base material 101 has an anchoring effect on the joining material 103 because the volume shrinkage accompanying the solidification of the joining material 103 may impair the adhesion between the joining surfaces of the base material 101 and the joining material 103.

Therefore, it is preferable that the surface side of the base material 101 in contact with the bonding material 103 is roughened. By roughening the surface of the base material 101, the surface area in contact with the joining material 103 can be increased, and the adhesion between the base material 101 and the joining material 103 can be improved. For example, the surface of the base material 101 can be roughened by sandblasting or the like.

It can be said that the larger the value of the surface roughness (Ra) of the surface of the base material 101, the larger the surface area and therefore the higher the adhesion, but in the gap between the target members 102a and 102b, the base material 101 It is desirable not to over-roughen the surface. When the surface of the base material 101 is roughened in the gap, there is an advantage that the particles generated in the gap are firmly adhered to prevent re-peeling, but when the surface is excessively roughened, the base is used. The material 101 itself may be sputtered, and the components of the base material 101 may become impurities in the film or become particles and cause an abnormal discharge.

Therefore, in the present embodiment, the surface roughness (Ra) on the surface of the base material 101 in contact with the bonding material 103 is 1.8 μm or more (preferably 1.8 μm or more and 3.0 μm or less, more preferably 1.8 μm or more 2. 5 μm or less). In order to improve the adhesion between the base material 101 and the joining material 103, it is preferable that the surface roughness (Ra) on the surface of the base material 101 in contact with the joining material 103 is 1.8 μm or more, and the sputtering of the base material 101 is performed. In order to suppress it, the upper limit is preferably 3.0 μm (more preferably 2.5 μm).

<Joining material>
The joining material 103 is provided between the base material 101 and the target members 102a and 102b. It is preferable that the joining material 103 joins the base material 101 and the target members 102a and 102b, and has good heat resistance and thermal conductivity. Further, since it is placed under vacuum during sputtering, it is preferable that it has a characteristic of low outgassing in vacuum.

Further, from the viewpoint of manufacturing, it is preferable that the bonding material 103 has fluidity when the base material 101 and the target members 102a and 102b are bonded to each other. In order to satisfy these characteristics, a low melting point metal material having a melting point of 300 ° C. or lower can be used as the joining material 103. For example, as the bonding material 103, a metal such as indium or tin, or a metal alloy material containing any one of these elements may be used. Specifically, a simple substance of indium or tin, an alloy of indium and tin, a solder alloy containing tin as a main component, or the like may be used.

<Target member>
As shown in FIGS. 1 and 2, the target members 102a and 102b are formed into a hollow cylindrical shape. Each of the target members 102a and 102b has a thickness of at least several millimeters to several tens of millimeters, and the entire thickness portion can be used as the target member.

When the target members 102a and 102b are attached to the base material 101, the base material 101 is inserted into the hollow portion of the target members 102a and 102b, and then the two are joined by the joining material 103. That is, the outer diameter of the base material 101 is smaller than the inner diameter (diameter of the hollow portion) of each of the target members 102a and 102b, and both are arranged at a predetermined interval, and the joining material 103 is arranged so as to fill this gap. Is provided. In order to stably hold the target members 102a and 102b and the base material 101, the joining material 103 is provided so as not to have a gap in the gap.

In each of the target members 102a and 102b, the outer surface of the cylinder shape is the target surface, and the inner surface of the cylinder shape is the surface facing the base material 101 and in contact with the joining material 103. Therefore, at the time of manufacture, the outer surfaces of the target members 102a and 102b may be smoothly molded, and the inner surface of the cylinder may be roughened in order to enhance the adhesiveness.

The target members 102a and 102b are formed by using various materials capable of forming a sputtering film. For example, the target members 102a and 102b may be ceramics. As the ceramics, a sintered body of a metal oxide, a metal nitride, a metal oxynitride or the like can be used. As the metal oxide, an oxide of a metal belonging to a typical element such as indium oxide, tin oxide, zinc oxide, and gallium oxide can be used.

Specifically, a compound of tin oxide and indium oxide (Indium Tin Oxide: ITO), zinc oxide (Zinc Oxide: ZnO), a compound of indium oxide and zinc oxide (Indium Zinc Oxide: IZO), indium oxide, zinc oxide and the like. A sintered body of a compound selected from a compound of gallium oxide (Indium Gallium Zinc Oxide: IGZO) or the like can be used as the target members 102a and 102b.

The above specific example is an example, and various sputtering materials can be used as the target member in the sputtering target according to the present embodiment.

Here, a gap of a predetermined interval (preferably 1 mm or less, for example, 0.1 to 0.5 mm) is provided between the target member 102a and the target member 102b. This gap is a safety measure to prevent the target members from colliding with each other and being damaged. As described above, the present inventors have found that the thin film redistributed in this gap leads to the occurrence of arcing. ..

Therefore, as a result of diligent research, the present inventors have reduced the surface roughness of the surface where the target member 102a and the target member 102b face each other (that is, the circular surface 104 shown in FIGS. 1 and 2) to 1.0 μm or less. By doing so, it was found that the occurrence of arcing can be suppressed. That is, in the sputtering target 100 according to the present embodiment, the surface roughness of the surface where the target member 102a and the target member 102b face each other is set to 1.0 μm or less (preferably 0.05 μm or more and 1.0 μm or less).

FIG. 3 is a cross-sectional view showing the vicinity of a gap between adjacent target members. Specifically, FIG. 2 shows a schematic diagram in which the inside of the frame line indicated by reference numeral 105 is enlarged. As shown in FIG. 3, a gap of 0.2 to 0.5 mm is provided between the target member 102a and the target member 102b, and the surface 104 on which each target member faces is intentionally rough in surface. It is processed to be. That is, each of the target members 102a and 102b has a circular surface 104 that faces the adjacent target member at a predetermined distance when joined to the base material 101, and the surface roughness (Ra) on the circular surface 104. ) Is 1.0 μm or less (preferably 0.05 μm or more and 1.0 μm or less).

According to the research by the present inventors, it was confirmed that the arcing occurred in the range where the surface roughness (Ra) of the circular surface 104 of each of the target members 102a and 102b exceeded 1.0 μm, but it was 1.0 μm or less. It was not confirmed.

The reason why the occurrence of arcing is suppressed when the surface roughness (Ra) is 1.0 μm or less is that the smooth surface weakens the adhesion of the redeposited film to the circular surface 104, so that the sputtered film is formed. It is considered that the redeposition of the plasma is less likely to occur, and as a result, the abnormal discharge of plasma caused by the peeling of the redeposition film is reduced.

It is expected that the smaller the surface roughness (Ra) is, the less likely it is that the sputtered film will be redeposited, but it is preferable that Ra = 0.05 μm, which is so-called mirror finish. It is not realistic to set it to less than 0.05 μm from the viewpoint of manufacturing cost, and the surface roughness (Ra) may be set to 0.05 μm or more and 1.0 μm or less in terms of improving the throughput of the device manufacturing process. preferable.

As described above, the sputtering target 100 according to the present embodiment has a surface roughness (Ra) of the circular surface 104 on each of the target members 102a and 102b of 1.0 μm or less (preferably 0.05 μm or more and 1.0 μm or less). By doing so, it is possible to suppress the occurrence of arcing during sputtering. As a result, it is possible to improve the yield of the device manufacturing process using the sputtering process.

<Manufacturing method of sputtering target>
Next, a method for manufacturing the sputtering target 100 according to the present embodiment will be described in detail. FIG. 4 is a process flow diagram showing a method for manufacturing the sputtering target 100 according to the embodiment of the present invention.

In the present embodiment, an example in which the indium tin oxide (ITO) sintered body is used as the target members 102a and 102b is shown, but the material of the sintered body is not limited to ITO, and IZO, IGZO and other metal oxide compounds are used. You can also.

First, the raw materials constituting the target members 102a and 102b are prepared. In this embodiment, indium oxide powder and tin oxide powder are prepared (S401, S402). The purity of these raw materials is usually 2N (99% by mass) or more, preferably 3N (99.9% by mass) or more, and more preferably 4N (99.99% by mass) or more. If the purity is lower than 2N, the target members 102a and 102b contain a large amount of impurities, so that desired physical properties cannot be obtained (for example, a decrease in the transmittance of the formed thin film, an increase in the resistance value, and particles associated with arcing). Occurrence) can occur.

Next, the powders of these raw materials are crushed and mixed (S403). For the crushing and mixing process of the raw material powder, a dry method using balls or beads (so-called media) such as zirconia, alumina, nylon resin, etc., a media stirring mill using the balls or beads, or a medialess container can be used. Wet methods such as rotary mills, mechanical stirring mills, and air flow mills can be used. Here, since the wet method is generally superior in pulverization and mixing ability as compared with the dry method, it is preferable to perform mixing by using the wet method.

The composition of the raw material is not particularly limited, but it is desirable to appropriately adjust the composition according to the composition ratio of the target members 102a and 102b. If it is desired to reduce the crystal grain size of the raw material powder, the powders of the raw materials may be pulverized in advance before being mixed, or may be pulverized at the same time in the powder treatment at the time of mixing.

If powder having a fine particle size is used, the density of the sintered body to be the target members 102a and 102b can be increased. It is possible to obtain fine powder by strengthening the crushing conditions, but if this is done, the amount of media (zirconia, etc.) mixed in during crushing will increase, and there is a risk that the impurity concentration in the target members 102a and 102b will increase. be. As described above, it is necessary to optimize the pulverization conditions while observing the balance between the high density of the sintered body and the concentration of impurities in the target members 102a and 102b.

Next, a slurry of raw material powder is dried and granulated (S404). At this time, the slurry may be rapidly dried using rapid drying granulation. Rapid drying granulation may be performed by using a spray dryer and adjusting the temperature and air volume of hot air. By using the rapid drying granulation, it is possible to suppress the separation of the indium oxide powder and the tin oxide powder due to the difference in the sedimentation rate due to the difference in the specific gravity of the raw material powder. By granulating in this way, the ratio of the compounding components is made uniform, and the handleability of the powder of the raw material is improved. Further, temporary firing may be performed before and after granulation.

Next, the mixture obtained by the above-mentioned mixing and granulation (in the case of provisional firing, that is provisionally fired) is pressure-molded to form a cylindrical molded body (S405). By this step, it is formed into a shape suitable for the target target members 102a and 102b. Examples of the molding process include mold molding, casting molding, injection molding, etc., but in order to obtain a complicated shape such as a cylindrical mold, a cold isostatic pressing method (CIP) is used. It is preferable to mold with or the like.

In the molding by CIP, first, the raw material weighed to a predetermined weight is filled in a rubber mold. At this time, by filling the rubber mold while rocking or tapping, it is possible to eliminate uneven filling and voids of the raw material in the rubber mold. The molding pressure by CIP may be appropriately set according to the density required for the target members 102a and 102b.

Next, the cylindrical molded body obtained in the molding step is sintered (S406). An electric furnace is used for sintering. The sintering conditions can be appropriately selected depending on the composition of the sintered body. For example, SnO2 is 10 wt. If it is ITO containing%, it can be sintered by placing it in an oxygen gas atmosphere at a temperature of 1500 to 1600 ° C. for 10 to 26 hours. If the sintering temperature is less than 1500 ° C., the densities of the target members 102a and 102b will decrease. On the other hand, if the temperature exceeds 1600 ° C., the electric furnace and the furnace material are seriously damaged and frequent maintenance is required, so that the work efficiency is significantly reduced. Further, if the sintering time is less than 10 hours, the density of the target is lowered, and if it is longer than 26 hours, the tact time becomes long and the manufacturing cost becomes high. Further, the pressure at the time of sintering may be atmospheric pressure, or may be a reduced pressure or a pressurized atmosphere.

Here, in the case of sintering in an electric furnace, the occurrence of cracks can be suppressed by adjusting the temperature raising rate and the temperature lowering rate of the sintering. Specifically, it is desirable that the heating rate of the electric furnace at the time of sintering is 300 ° C./hour or less, more preferably 180 ° C./hour or less. Further, the temperature lowering rate of the electric furnace at the time of sintering is preferably 5 ° C./hour or less. The rate of temperature rise or temperature may be adjusted so as to change stepwise.

Although the cylindrical molded body shrinks due to sintering, the temperature is maintained during the temperature rise in order to make the temperature inside the furnace uniform before entering the temperature range where heat shrinkage begins, which is common to all materials. .. As a result, the temperature unevenness in the furnace is eliminated, and all the sintered bodies installed in the furnace shrink uniformly. Further, by setting appropriate conditions for the ultimate temperature and the holding time for each material, a homogeneous sintered body can be obtained.

Next, the formed cylindrical sintered body is machined into a desired cylindrical shape using a machining machine such as a surface grinder, a cylindrical grinder, a lathe, a cutting machine, or a machining center (S407). .. The machining performed here is a step of machining a cylindrical sintered body so as to have a desired shape and surface roughness, and finally, the target members 102a and 102b are formed through this step.

Regarding the outer surface (sputtered surface) of the target members 102a and 102b, the surface roughness (Ra) is preferably 0.5 μm or less. As a result, the electric field is concentrated on the protrusions during sputtering, and the risk of abnormal discharge can be reduced.

Further, in the present embodiment, the circular surfaces 104 of the target members 102a and 102b are ground by using a grindstone to reduce the surface roughness (Ra) of the circular surfaces 104 to 1.0 μm or less (preferably 0. 05 μm or more and 1.0 μm or less). For example, by grinding with a fine grindstone such as # 400 or # 800, the surface roughness can be kept within the range of 0.05 μm or more and 1.0 μm or less.

Next, the machined cylindrical sintered body (that is, the target members 102a and 102b) is bonded to the base material 101 (S408). In particular, in the case of the cylindrical sputtering target 100, the target members 102a and 102b are bonded to the cylindrical base material 101 called the backing tube with the bonding material 103 as an adhesive, as shown in FIGS. 1 and 2. Specifically, the base material 101 is inserted into the hollow portion of the hollow cylindrical target members 102a and 102b, and the molten bonding material 103 is injected into the space between the base material 101 and the target members 102a and 102b. After that, they are joined by solidifying through a cooling process. Through the above steps, the cylindrical sputtering target 100 according to the present embodiment can be obtained.

[Example]
The present inventors prepared target members using three different materials (ITO, IZO, and IGZO), and investigated the relationship between surface roughness and the occurrence of arcing for each. The results are shown in Tables 1 to 3. The experimental conditions were: target thickness: 9 mm, spatter pressure: 0.6 Pa, Ar (argon) flow rate: 300 sccm, input power: 4 kW / m, spatter time: 70 hours. In addition, since it is an evaluation of target durability when continuous discharge is performed, discharge is performed without setting a substrate or the like. The surface roughness (Ra) was measured using a small surface roughness measuring machine (Surftest SJ-301: manufactured by Mitutoyo) according to the ANSI standard. The surface roughness was measured at 6 points on each end surface of the target member at intervals of 60 ° (12 points per target member), and the weighted average value of all the measured values was taken as the surface roughness of the target member.

As described above, according to the experiment according to the present invention, in the plurality of target members constituting the cylindrical sputtering target, the surface roughness (Ra) of the circular surface of each target member is 1.0 μm or less (preferably 0). It was found that the occurrence of arcing during sputtering can be reduced by setting the thickness to 0.05 μm or more and 1.0 μm or less).

Each of the above-described embodiments of the present invention can be appropriately combined and carried out as long as they do not contradict each other. Further, based on the display device of each embodiment, those skilled in the art have added, deleted or changed the design as appropriate, or added, omitted or changed the conditions of the process of the present invention. As long as it has a gist, it is included in the scope of the present invention.

Further, even if the action / effect is different from the action / effect brought about by the embodiment of each of the above-mentioned embodiments, those which are clear from the description of the present specification or which can be easily predicted by those skilled in the art are referred to. Naturally, it is understood that it is brought about by the present invention.

100: Cylindrical sputtering target 101: Base material 102a, 102b: Target member 103: Bonding material 104: Circular surface 105: Frame line S401: Step of preparing indium oxide powder S402: Step of preparing tin oxide powder S403: Of raw material Step of crushing and mixing powder S404: Step of drying and granulating a slurry of raw material powder S405: Step of forming a cylindrical molded body S406: Step of sintering a cylindrical molded body S407: Desired for cylindrical type S408: A process of bonding a cylindrical sintered body to a base material.

Claims (2)

It is composed of ITO (Indium-Tin-Oxide) or IZO (Indium-Zinc-Oxide) bonded to a substrate composed of metal via a bonding material composed of a low melting point metal having a melting point of 300 ° C. or lower. Including multiple target members
The surface of the base material in contact with the joining material is roughened.
The plurality of target members have a hollow cylindrical shape, and the inner surface in contact with the bonding material is roughened more than the outer surface to be sputtered, and the surface roughness (Ra) of the outer surface to be sputtered is 0. It has a circular surface that is 5 μm or less and faces the base material at a distance of 0.2 mm or more and 1.0 mm or less from the adjacent target members when they are joined to the base material so as to surround the outer peripheral surface of the base material. death,
A sputtering target having a surface roughness (Ra) of 0.05 μm or more and 0.4 μm or less on the circular surface. ITO (Indium-Tin-Oxide), whose surface in contact with the bonding material is roughened through a bonding material made of a low melting point metal having a melting point of 300 ° C. or lower and bonded to a base material composed of a metal. Alternatively, the circular surfaces of a plurality of hollow cylindrical target members made of IZO (Indium-Zinc-Metal) are polished so that the surface roughness (Ra) is 0.05 μm or more and 0.4 μm or less, and the surface roughness (Ra) is polished to be 0.05 μm or more and 0.4 μm or less. The inner surface of the target member in contact with the bonding material is roughened more than the outer surface to be sputtering, and the surface roughness (Ra) of the outer surface of the plurality of target members to be sputtering is 0.5 μm or less. Polished to
The plurality of target members are joined to the base material so that the circular surfaces face each other with an interval of 0.2 mm or more and 1.0 mm or less and surround the outer peripheral surface of the base material. A method for manufacturing a sputtering target, which comprises joining through a material.

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