TWI704245B - Sputtering target and method of manufacturing the same - Google Patents

Abstract

One of the goals is to reduce the occurrence of arc phenomenon in the manufacturing process and to increase the output of the manufacturing process. Regarding the sputtering target of one embodiment of the present invention, it includes a base material, a plurality of target parts, and a bonding material. The material of the substrate includes metal. The material of the plurality of target parts includes ceramics, and the shape is a hollow cylinder. The material of the bonding material includes a low melting point metal whose melting point is below 300 degrees Celsius. The plurality of target parts are joined to the base material via the joining material. The surface roughness (Ra) of the outer peripheral surface of the substrate in contact with the bonding material is 1.8 μm or more. When the target parts are joined to the base material in such a way as to surround the outer peripheral surface of the base material, they are respectively placed at designated intervals with adjacent target parts and have a plurality of circular surfaces facing each other. The surface roughness (Ra) on the circular surface is 1.0 μm or less.

Description

Sputtering target and manufacturing method thereof

The present invention relates to a sputtering target and a manufacturing method thereof. Especially with regard to the surface roughness of the sintered body that constitutes the target component.

In recent years, the development of sputtering devices using cylindrical sputtering targets has been progressing in sputtering devices for forming metal thin films or metal oxide thin films on large glass substrates. The so-called cylindrical sputtering target is a sintered body composed of the target material is processed into a hollow cylindrical shape, and then joined to a base called a backing plate or backing tube Material to obtain a target for sputtering.

Compared with a flat sputtering target, such a cylindrical sputtering target has higher target usage efficiency, less erosion and the generation of particles due to the peeling of deposits. Fewer and other advantages. In particular, the so-called advantage of fewer particles is very helpful to reduce the occurrence of arcing caused by particles re-accumulating on the target.

For example, in the case of manufacturing a cylindrical sputtering target used to form an indium tin oxide (ITO) thin film, a sintered body (ceramic) that mixes indium oxide powder and tin oxide powder and sinters is processed into a hollow Cylindrical, and then joined to the cylindrical substrate (backing tube).

Therefore, it is difficult to produce a long-form target member made of ceramic. Therefore, in order to achieve the lengthening (larger area) of the cylindrical sputtering target, a plurality of cylindrical sintered bodies are formed, and they are continuously joined to the base material in parallel. Long cylindrical sputtering target technology (refer to Patent Document 1: Japanese Patent Publication H7-228967).

When a plurality of target parts are not provided with a gap with respect to the base material, the target parts may expand and contract due to heat during sputtering, and the target parts may collide with each other and cause cracks or defects. Here, generally, when a plurality of target parts are joined to the base material, the target parts are arranged with a predetermined interval between each other.

However, as a result of intensive research by the inventors of the present case, when there is a gap between the target parts, a thin film is deposited in the gap due to sputtering (the components of the target part after sputtering do not reach the substrate and The phenomenon of re-attaching to the target material), when it reaches a certain amount, it is known that it may break into the plasma that discharges in a stable state. As a result, the potential balance in the plasma will disintegrate, which is known to be related to the accidental arc phenomenon that causes local charge concentration.

One of the objectives of the present invention is to provide a sputtering target which can suppress the occurrence of the arc phenomenon in the sputtering described above, and can improve the processing yield of the sputtering processing manufacturing device.

According to an embodiment of the present invention, a sputtering target includes a base material, a plurality of target parts, and a bonding material. The material of the substrate includes metal. The material of the plurality of target parts includes ceramics, and the shape is a hollow cylinder. The material of the bonding material includes a low melting point metal whose melting point is below 300 degrees Celsius. The plurality of target parts are joined to the base material via the joining material. The surface roughness (Ra) of the substrate in contact with the outer peripheral surface of the bonding material is 1.8 μm or more (may be 1.8 μm or more and 3.0 μm or less, and more preferably 1.8 μm or more and 2.5 μm or less). When the target member is joined to the base material in such a way as to surround the outer peripheral surface of the base material, it is placed at a designated interval with the adjacent target member and has a plurality of circular surfaces facing each other. The surface roughness (Ra) on the aforementioned circular surface is 1.0 μm or less. The surface roughness (Ra) may be 0.05 μm or more and 1.0 μm or less.

The method for manufacturing a sputtering target according to an embodiment of the present invention includes the following steps. Prepare the substrate, the material of which contains metal, and is roughened with a surface roughness (Ra) of 1.8 μm or more (also 1.8 μm or more and 3.0 μm or less, or even 1.8 μm or more and 2.5 μm or less) The outer peripheral surface of the aforementioned base material is used to contact the bonding material. Prepare a plurality of target parts, the material of which includes ceramics, the shape of the plurality of target parts is a hollow cylinder, and the surface roughness (Ra) is 1.0 μm or less to grind the plurality of target parts Round faces. Prepare a bonding material, the material of which includes a low-melting metal with a melting point of 300 degrees Celsius or less, surround the outer peripheral surface of the substrate with the plurality of target members and are placed at designated intervals with the adjacent plurality of target members respectively. In such a manner that the plurality of circular surfaces face each other, the plurality of target parts are bonded to the base material via the bonding material. The surface roughness (Ra) of the circular surface can also be 0.05 μm or more and 1.0 μm or less.

The material of the aforementioned target parts may also include indium tin oxide (Indium-Tin-Oxide, ITO), indium zinc oxide (Indium-Zinc-Oxide, IZO) or indium-gallium-zinc oxide (Indium-Gallium-Zinc-Oxide, IGZO) .

Among them, a non-contact surface roughness measuring instrument is used to measure the surface roughness (Ra) according to ANSI specifications. The measurement position of the surface roughness (Ra) is performed at six positions at 60° intervals on each end surface of the target material (each target material has twelve positions), and the weighted average of all measured values is the target The surface roughness of the parts (Ra).

Hereinafter, the embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in various aspects within the scope not departing from the gist thereof, and is not limitedly interpreted as the description content of the embodiments exemplified below.

Moreover, in order to make the description more clear, the drawings are shown in a modal way compared to the actual state, but they are only an example and not a limitation. Explanation of the invention. In addition, in this specification and each drawing, for the description of the drawing that has appeared, if an element with the same function appears later, the same symbol will be attached to the element, and repeated description will be omitted.

The structure of the sputtering target will be described below.

FIG. 1 is a perspective view of the structure of a sputtering target 100 according to an embodiment of the present invention. In addition, FIG. 2 shows a cross-sectional view of the structure of the sputtering target 100 according to an embodiment of the present invention.

In this embodiment, a cylindrical sputtering target is illustrated. The structure of the sputtering target 100 of this embodiment includes a substrate 101 and a plurality of target components 102a and 102b. The respective target members 102a and 102b are joined to the base material 101 via the joining material 103, respectively. At this time, the bonding material 103 is installed to fill the gaps provided between the base material 101 and the target members 102a and 102b.

The characteristic of the sputtering target 100 of this embodiment is that it constitutes a sintered body of a plurality of target members 102a and 102b. Specifically, the target members 102a, 102b are placed at designated intervals with adjacent target members 102b, 102a, and have a plurality of circular surfaces 104 facing each other. The surface roughness (Ra ) Is 1.0 μm or less (may be 0.05 μm or more and 1.0 μm or less). This point will be detailed later.

A plurality of target members 102a and 102b are provided so as to surround the outer peripheral surface of the base material 101. The plurality of target members 102a and 102b may be arranged to be coaxial or slightly coaxial with respect to the central axis of the substrate 101. With this structure, when the sputtering target 100 is installed in the sputtering device and the base material 101 is rotated around the center, the respective target members 102a and 102b can maintain a certain distance from the film formation surface (sample substrate).

In the sputtering target 100, when a plurality of cylindrical sputtering target members 102a and 102b are mounted on the base material 101, the respective target members 102a and 102b are respectively arranged at predetermined intervals. For example, the gap can be 1 mm or less, and more can be 0.1-0.5 mm. By arranging the plurality of target members 102a and 102b to be placed at predetermined intervals in this way, it is possible to prevent damage caused by the target members colliding with each other.

In the sputtering target 100 of this embodiment, by using the bonding material 103 to bond a plurality of target parts 102a and 102b to the base material 101, a long sputtering target 100 with a length of 100 mm or more can be formed.

The base material will be explained below.

The outer surface shape of the base material 101 may correspond to the inner surface of the target member 102a, 102b having a hollow cylindrical shape. As mentioned above, the outer diameter of the substrate 101 is adjusted to be only slightly smaller than the inner diameter of each target member 102a, 102b, and there can be a gap when the two coaxially overlap. The bonding material 103 is provided in this gap.

The respective target members 102a and 102b are heated by ion irradiation when forming a thin film by sputtering, and the temperature rises. In order to suppress the temperature rise of each target member 102a, 102b when forming a thin film by sputtering, the substrate 101 may have a function as a heat sink for each target member 102a, 102b. For example, the base material 101 can have a hollow structure, and its internal structure can allow the refrigerant to circulate. Therefore, the base material 101 can use a material with good electrical conductivity and thermal conductivity.

Moreover, the material of the base material 101 can be a metal at the same time, and this metal has good wettability with the bonding material 103 and can obtain a high bonding strength with the bonding material 103. According to the above, the material constituting the base material 101 can be, for example, copper (Cu) or titanium (Ti), or can be, for example, a copper alloy, titanium alloy, or stainless steel (SUS). Copper alloys can be alloys with chromium copper or copper (Cu) as the main component. In addition, if titanium (Ti) is used as the base material 101, it can be a light-weight and rigid base material 101.

The substrate 101 can not only be formed of a single metal or a metal alloy, but also can be provided to coat the surface of the metal substrate with other metal films. For example, a metal coating film containing titanium (Ti), copper (Cu), silver (Ag), nickel (Ni), etc. can also be formed.

In the sputtering target 100, ions do not irradiate the entire surface of the target members 102a and 102b during sputtering. Instead, the ions irradiate only a part of the surface while rotating the cylindrical sputtering target 100, even if it is the same target. The member 102a or 102b may have a temperature difference between the ion irradiation surface and the back surface. However, since the base material 101 has a cooling function, in addition to suppressing the temperature rise of the target members 102a and 102b, it is also possible to suppress the influence of thermal deformation due to the above-mentioned temperature difference.

Here, in the case of the sputtering target 100, the molten bonding material 103 is injected into the space between the substrate 101 and the target components 102a, 102b, and then solidified through a cooling process, so that the substrate 101 and the target components are solidified. The joining of 102a and 102b. Therefore, the substrate 101 is inserted into the hollow part of the hollow cylindrical target members 102a, 102b, so the space between the substrate 101 and the target members 102a, 102b cannot be adjusted during the joining process. Therefore, since the volume shrinkage accompanying the curing of the bonding material 103 may impair the tightness of the bonding surface of the base material 101 and the bonding material 103, it is desirable to continue the anchor effect for the base material 101 and the bonding material 103.

Therefore, the position of the outer peripheral surface of the base material 101 in contact with the bonding material 103 can be roughened. By roughening the surface of the substrate 101, the surface area in contact with the bonding material 103 can be increased, and the tightness of the substrate 101 and the bonding material 103 can be improved. For example, the surface of the substrate 101 can be roughened by sandblasting.

Among them, although it can be said that the larger the value of the surface roughness (Ra) of the surface of the substrate 101, the larger the surface area will increase the compactness, but in the gap between the target parts 102a and 102b, it is hoped not to over-roughen The surface of the substrate 101. In the case of roughening the surface of the substrate 101 located in the gap, the particles generated in the gap will strongly adhere, which has the advantage of preventing peeling again. On the other hand, if the roughening is excessive, the substrate 101 itself will be sputtered, and there will be impurities of the component of the substrate 101 in the film, and the formation of particles may cause abnormal discharge.

Therefore, in this embodiment, the surface roughness (Ra) of the outer peripheral surface of the base material 101 in contact with the bonding material 103 can be 1.8 μm or more (it can also be 1.8 μm or more and 3.0 μm or less, more preferably 1.8 μm or more and 2.5 μm or less). In order to improve the tightness of the base material 101 and the bonding material 103, the surface roughness (Ra) of the outer peripheral surface of the base material 101 in contact with the bonding material 103 may be 1.8 μm or more. In order to suppress the sputtering of the substrate 101, the upper limit of the surface roughness (Ra) may be 3.0 μm (more preferably 2.5 μm).

The joining material will be described below.

The bonding material 103 is provided between the base material 101 and each target member 102a, 102b. The bonding material 103 may also have good heat resistance and thermal conductivity along with the bonding of the base material 101 and each target member 102a, 102b. In addition, since the sputtering will be placed in a vacuum state, it can also have the characteristic of releasing a small amount of gas in the vacuum.

Furthermore, from a manufacturing point of view, the bonding material 103 may also have fluidity when bonding the base material 101 and each target member 102a, 102b. In order to satisfy these characteristics, the bonding material 103 can use a low melting point metal material with a melting point of 300 degrees Celsius or less. For example, metals such as indium and tin or metal alloy materials containing any of these elements can also be used as the bonding material 103. Specifically, materials such as a single body of indium or tin, an alloy of indium and tin, and a solder alloy with tin as the main component can also be used.

The target member will be described below.

As shown in FIGS. 1 and 2, each target member 102a, 102b is formed in a hollow cylindrical shape. Each target member 102a, 102b has a thickness of at least a few millimeters (mm) to several tens of millimeters, and the entire thickness portion can be used as a target member.

When mounting the target members 102a and 102b to the base material 101, the base material 101 is inserted into the hollow part of the target members 102a and 102b, and then the two are joined by the joining material 103. That is, the outer diameter of the base material 101 is smaller than the inner diameter (the diameter of the hollow portion) of each target member 102a, 102b, and the two are arranged to be placed at a specified interval, and the bonding material 103 is arranged to fill the gap. Since the respective target members 102a and 102b and the base material 101 are stably maintained, the bonding material 103 in this gap can be closely arranged.

The cylindrical outer surface of each target member 102a, 102b is the target surface, and the cylindrical inner surface is the surface facing the substrate 101 and in contact with the bonding material 103. Therefore, during manufacturing, the outer surface of each target member 102a, 102b can be smoothly formed, or the inner surface of the cylinder can be roughened to improve adhesion.

The manufacturer can use various materials capable of forming a thin film by sputtering to form each target member 102a, 102b. For example, the target members 102a and 102b may also be ceramics. This ceramic can use materials such as metal oxides, metal nitrides, and sintered bodies of metal oxynitrides. The metal oxide can use metal oxides that are typical elements such as indium oxide, tin oxide, zinc oxide, and gallium oxide.

Specifically, it can be selected from indium tin oxide (Indium Tin Oxide, ITO), zinc oxide (Zinc Oxide, ZnO), indium zinc oxide (Indium Zinc Oxide, IZO), and indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO). The sintered body of the compound of) is used as the target parts 102a, 102b.

Among them, in an example of the above specific embodiment, regarding the sputtering target 100 of this embodiment, various sputtering materials can be used as the target members 102a and 102b.

Here, a gap is provided at a predetermined interval between the target member 102a and the target member 102b (may be 1 mm or less, for example, 0.1 to 0.5 mm). Although this gap is a safety measure to prevent the target members 102a and 102b from colliding with each other and causing damage, the inventors of the present invention concluded that the re-stacking of the film in this gap is related to the occurrence of the arc phenomenon.

Therefore, after repeated in-depth research by the inventors of the present case, it was concluded that the surface of the target member 102a and the target member 102b facing each other (that is, the circular surface 104 shown in FIGS. 1 and 2) The roughness (Ra) is 1.0 μm or less, which can suppress the occurrence of arc phenomenon. In other words, with regard to the sputtering target 100 of this embodiment, the surface roughness (Ra) of the surfaces facing each other of the target member 102a and the target member 102b is 1.0 μm or less (may also be 0.05 μm or more and be 1.0 μm or less).

Fig. 3 shows a cross-sectional view of the vicinity of the gap between adjacent target members 102a and 102b. Specifically, it is a schematic diagram showing an enlarged area of the dotted line indicated by the symbol 105 in FIG. 2. As shown in Figure 3, a gap of 0.2-0.5 mm can be provided between the target member 102a and the target member 102b, and the circular surface 104 of each target member 102a, 102b facing each other is deliberately performed Surface roughening processing. That is, when each target member 102a, 102b is joined to the substrate 101, it is placed at a specified interval with the adjacent target member 102b, 102a, and has a circular surface 104 facing each other. The surface roughness (Ra) is 1.0 μm or less (also 0.05 μm or more and 1.0 μm or less).

According to the research of the present inventors, when the surface roughness (Ra) of the circular surface 104 of each target member 102a, 102b exceeds 1.0 μm, although arc phenomenon is confirmed, the surface roughness (Ra) When it is less than 1.0 μm, no arc phenomenon has been confirmed.

The reason why the arc phenomenon can be suppressed when the surface roughness (Ra) is less than 1.0 μm can be considered as the surface becomes smooth, which reduces the adhesion of the re-deposited film, and it is difficult to reproduce the sputtered film. Accumulation, thereby reducing the abnormal discharge of the plasma caused by the peeling of the deposited film again.

However, although it is expected that the smaller the surface roughness (Ra), the more difficult it is to re-stack the sputtered film, but the so-called mirror processing can reach Ra=0.05 μm at most. If it is less than 0.05 μm, it is not practical in terms of manufacturing cost. Even if the throughput of device manufacturing is increased, the surface roughness (Ra) is preferably 0.05 μm or more and 1.0 μm or less.

As described above, regarding the sputtering target 100 of this embodiment, the surface roughness (Ra) of the circular surface 104 of each target member 102a, 102b is 1.0 μm or less (or 0.05 μm or more) And less than 1.0 μm), which can suppress the occurrence of arc phenomenon during sputtering. As a result, it is possible to increase the throughput of the process manufactured by the sputtering processing device.

The manufacturing method of the sputtering target will be described below.

Next, the manufacturing method of the sputtering target 100 of this embodiment will be described in detail. FIG. 4 shows a processing flow chart of a method for manufacturing a sputtering target 100 according to an embodiment of the present invention.

In this embodiment, although indium tin oxide (ITO) sintered body is used as the target member 102a, 102b, the material of the sintered body is not limited to ITO, and other metal oxides such as IZO and IGZO can also be used.

First, the raw materials for constituting the target members 102a and 102b are prepared. In this embodiment, indium oxide powder and tin oxide powder (S401, S402) are prepared. The purity of these raw materials can usually be 2N (99% by mass) or more, 3N (99.9% by mass) or more, or more than 4N (99.99% by mass). When the purity is lower than 2N, the target members 102a and 102b will contain a large amount of impurities, so problems such as difficulty in obtaining the desired material properties (such as reduced permeability of the formed thin film, increased resistance value, and arc phenomenon Generate particles).

Next, these raw material powders are crushed and mixed (S403). The pulverization and mixing process of the raw material powder can be carried out in a dry method using zirconia, alumina, nylon resin and other spheres or beads (the so-called medium), and the aforementioned spheres or beads can also be used. The medium agitated grinder, the medium-free container rotary grinder, the mechanical agitated grinder, the air-flow grinder, etc. perform the wet method. Generally speaking, the pulverization and mixing capacity of the wet method is better than that of the dry method, so the wet method can be used for mixing.

Although there are no particular restrictions on the composition of the raw material, it can be appropriately adjusted according to the composition ratio for the target member 102a, 102b. When the crystal particle size of the raw material powder is expected to be reduced, the pre-grinding treatment may be performed before the mixing of the raw material powders, or the pulverization may be performed at the same time as the powder treatment during mixing.

Among them, when fine-grained powders are used, it is possible to increase the density into a sintered body of the target members 102a and 102b. Although the pulverization conditions can be strengthened to obtain fine powders, if this is the case, the mixing amount of the medium (such as zirconia) used in the pulverization will increase, and the impurity concentration in the target parts 102a and 102b may increase. In this way, it is necessary to improve the pulverization conditions while observing the high density of the sintered body and the balance of the impurity concentration in the target members 102a and 102b.

Next, the powder slurry of raw materials is dried for granulation (S404). At this time, the slurry can also be rapidly dried using a rapid drying granulation method. In the rapid drying granulation method, a spray dryer can be used, and the temperature and air volume of the hot air can be adjusted. Since the difference in the specific gravity of the raw material powder will cause the sedimentation rate to be different, the rapid drying granulation method can prevent the separation of indium oxide powder and tin oxide powder. With such a granulation method, the proportion of the formula ingredients can be made uniform, and the rationality of the raw material powder can be improved. In addition, calcining can also be performed before and after granulation.

Next, the mixture obtained through the above mixing and granulation (after the stage firing treatment when the calcining treatment is provided) is press-formed to form a cylindrical shaped body (S405). By this processing, it can be formed into an appropriate shape for the target member 102a, 102b. Although the forming process can be, for example, mold forming, casting forming, injection forming, etc., in order to obtain a complex shape such as a cylindrical shape, it can be formed by cold isostatic pressing (CIP).

Through the forming step of CIP, first fill the rubber mold with the raw powder weighed by the specified weight. At this time, by shaking and tapping the rubber mold while filling, it is possible to avoid uneven filling of the raw material powder or voids in the mold. The pressure in the forming step of the CIP can be appropriately set according to the required density of the target parts 102a and 102b.

Next, the cylindrical body obtained by the forming process is sintered to form a body (S406). An electric furnace can be used for sintering. The sintering conditions can be appropriately selected according to the composition of the sintered body. For example, if it is ITO containing 10 weight percent (wt•%) of SnO ₂ , it can be sintered by placing it at a temperature of 1500 to 1600 degrees Celsius for 10 to 26 hours in an oxygen environment. When the sintering temperature is 1500 degrees Celsius, the density of the target members 102a and 102b will decrease. On the other hand, when it exceeds 1600 degrees Celsius, it will increase the damage to the electric furnace and furnace materials and require frequent maintenance, which will significantly reduce the work efficiency. Furthermore, if the sintering time is shorter than 10 hours, the density of the target members 102a, 102b will be reduced, and if it is longer than 26 hours, the tact time will be lengthened, thereby increasing the manufacturing cost. In addition, the pressure during sintering may be atmospheric pressure, or may be less than or greater than atmospheric pressure.

Here, when an electric furnace is used for sintering, it is possible to suppress the occurrence of cracks by adjusting the heating rate and cooling rate of the sintering. Specifically, the heating rate of the electric furnace during sintering can be less than 300 degrees Celsius per hour, and can even be less than 180 degrees Celsius per hour. In addition, the cooling rate of the electric furnace during sintering can be below 5 degrees Celsius per hour. Among them, it is also possible to adjust the temperature increase rate or the temperature decrease rate step by step.

Although the cylindrical body shrinks due to the sintering process, in order to make the temperature in the furnace uniform before all the materials enter the temperature range where the heat shrinks together, the temperature is maintained during the temperature rise. Thereby, the temperature unevenness in the furnace can be eliminated, so the entire sintered body set in the furnace can shrink uniformly. By setting the reaching temperature and holding time to appropriate conditions according to various materials, a sintered body with uniform texture can be obtained.

Next, use machining machines such as surface grinders, cylindrical grinders, lathes, cutting machines, machining centers, etc., to machine the formed cylindrical sintered body into the desired cylindrical shape. Shape (S407). The machining performed here is a treatment to process the cylindrical sintered body into a desired shape and surface roughness, and the target parts 102a and 102b are completed through this treatment.

Regarding the outer surface (surface to be sputtered) of the target members 102a and 102b, the surface roughness (Ra) may be 0.5 μm or less. Thereby, it is possible to reduce the risk that the electric field is concentrated on the protrusion during sputtering and abnormal discharge occurs.

In addition, in this embodiment, the circular surface 104 of the target member 102a, 102b is polished using a grinding stone so that the surface roughness (Ra) of the circular surface 104 becomes 1.0 μm or less (or 0.05 μm or more and 1.0 μm or less). For example, the surface roughness (Ra) can fall within the range of 0.05 μm or more and 1.0 μm or less by using #400 or #800 grinding stones of the thickness.

Next, the machined cylindrical sintered body (that is, the target member 102a, 102b) is joined to the base material 101 (S408). Especially in the case of the sputtering target 100, as shown in Figures 1 and 2, the bonding material 103 used as an adhesive bonds the target components 102a and 102b to a cylindrical substrate called a backing tube. 101. Specifically, the base material 101 is inserted into the hollow part of the hollow cylindrical target member 102a, 102b, and the molten bonding material 103 is injected into the space between the base material 101 and the target member 102a, 102b, and then undergoes a cooling process By curing, the substrate 101 and the target members 102a and 102b are joined together. According to the above processing, the sputtering target 100 related to this embodiment can be obtained.

Examples will be described below.

The inventors of this case used three different materials (ITO, IZO, and IGZO) to make the target parts, and investigated the relationship between the surface roughness (Ra) of the three and the occurrence of arcing. The results are shown in Tables 1 to 3. Among them, in each experimental condition, the thickness of the target member is 9 mm, the sputtering pressure is 0.6 Pa, the argon flow is 300 sccm, the input power is 4 kW/m, and the sputtering time is 70 hours. In addition, in order to evaluate the durability of the target during continuous discharge, the discharge is performed without a substrate or the like. Among them, a small surface roughness measuring instrument (SURFTEST SJ-301 manufactured by Mitutoyo) is used to measure the surface roughness (Ra) according to ANSI specifications. The measurement position of the surface roughness (Ra) is performed at six positions at 60° intervals on each end surface of the target material (each target material has twelve positions), and the weighted average of all measured values is the target The surface roughness of the parts (Ra).

Table 1 <The occasion of ITO>

Table 2

As mentioned above, according to the experiment of the embodiment of the present invention, it can be known that among the multiple target parts of the cylindrical sputtering target, the surface roughness (Ra) of the circular surface of each target part is 1.0μm or less (It may be 0.05 μm or more and 1.0 μm or less), which can reduce the occurrence of arc phenomenon during sputtering, and can also suppress the cracking of the target member.

Although various implementations have been described above as implementations of the present invention, as long as they do not contradict each other, they can be combined appropriately and implemented. In addition, according to the sputtering target of each implementation type, even if the industry in this field adds appropriate components, eliminates the design or changes the design, or performs processing and processing additions, omissions, or condition changes, it also includes Within the scope of the present invention.

In addition, even other effects that are different from the effects brought about by the above-mentioned various implementation modes, if it is clear from the description of this specification, or the effects are easily predicted by the industry in this field, it is also It should of course be understood as the effect brought by the present invention.

100‧‧‧Sputtering target 101‧‧‧Substrate 102a, 102b‧‧‧Target parts 103‧‧‧Joint material 104‧‧‧round face 105‧‧‧dotted line

FIG. 1 is a perspective view of the structure of a sputtering target according to an embodiment of the present invention. FIG. 2 shows a cross-sectional view of the structure of a sputtering target according to an embodiment of the present invention. 3 is a cross-sectional view of the vicinity of the gap between the target members in the sputtering target of an embodiment of the present invention. 4 shows a processing flow chart of a method for manufacturing a sputtering target according to an embodiment of the present invention.

100‧‧‧Sputtering target

101‧‧‧Substrate

102a, 102b‧‧‧Target parts

103‧‧‧Joint material

104‧‧‧round face

Claims (4)

A sputtering target includes: a substrate, the material of the substrate includes metal; a plurality of target parts, the material of the target parts includes indium tin oxide (Indium-Tin-Oxide, ITO) or indium zinc oxide (Indium-Zinc-Oxide, IZO), the shape of the target parts is a hollow cylindrical shape; and a bonding material made of a metal containing indium or tin or a metal alloy containing at least one of indium or tin Constituted, the target parts are joined to the base material via the bonding material; wherein the surface roughness (Ra) of the outer peripheral surface of the base material in contact with the bonding material is 1.8 μm or more, the target parts When joining to the substrate in a manner that surrounds the outer peripheral surface of the substrate, it is placed at an interval of 0.2mm or more and 1.0mm or less with the adjacent target parts and has a plurality of circular surfaces facing each other , The surface roughness (Ra) of the circular surfaces is 0.05 μm or more and 0.4 μm or less. The sputtering target according to claim 1, wherein the surface roughness (Ra) of the outer peripheral surface of the substrate in contact with the bonding material is 1.8 μm or more and 3.0 μm or less. A method for manufacturing a sputtering target includes: preparing a substrate, the material of which includes metal, and roughening the substrate with a surface roughness (Ra) of 1.8 μm or more for use with a bonding material Contact an outer peripheral surface; prepare a plurality of target parts, the materials of these target parts include indium tin oxide (Indium-Tin-Oxide, ITO) or indium zinc oxide (Indium-Zinc-Oxide, IZO), the shape of the target parts is a hollow cylinder, and the surface roughness (Ra) is 0.05 μm or more and 0.4 μm or less to grind the multiple circular surfaces of the target parts; and prepare A bonding material, the bonding material is composed of a metal containing indium or tin or a metal alloy containing at least one of indium or tin, and the target members surround the outer peripheral surface of the substrate and are respectively connected to the adjacent ones The target parts are placed at intervals of 0.2 mm or more and 1.0 mm or less and the circular surfaces face each other, and the target parts are bonded to the base material via the bonding material. The method of manufacturing a sputtering target according to claim 3, wherein the outer periphery of the base material for contact with the bonding material is roughened in such a way that the surface roughness (Ra) is 1.8 μm or more and 3.0 μm or less surface.

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