TWI635194B - Cylindrical sputtering target and manufacturing method thereof - Google Patents

Cylindrical sputtering target and manufacturing method thereof Download PDF

Info

Publication number
TWI635194B
TWI635194B TW106106359A TW106106359A TWI635194B TW I635194 B TWI635194 B TW I635194B TW 106106359 A TW106106359 A TW 106106359A TW 106106359 A TW106106359 A TW 106106359A TW I635194 B TWI635194 B TW I635194B
Authority
TW
Taiwan
Prior art keywords
cylindrical
sintered body
cylinder
oxygen element
cylindrical sintered
Prior art date
Application number
TW106106359A
Other languages
Chinese (zh)
Other versions
TW201734240A (en
Inventor
館野諭
長田幸三
Original Assignee
Jx金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx金屬股份有限公司 filed Critical Jx金屬股份有限公司
Publication of TW201734240A publication Critical patent/TW201734240A/en
Application granted granted Critical
Publication of TWI635194B publication Critical patent/TWI635194B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6583Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6586Processes characterised by the flow of gas

Abstract

本發明之一目的在於提供圓筒軸方向之長度為470 mm以上之圓筒形燒結體、圓筒形濺射靶件及此些之製造方法。根據本發明之一實施型態之具有圓筒形燒結體之圓筒形濺射靶件之製造方法,於工作台上配置圓筒形成型體,圓筒形成型體於圓筒軸方向之長度為600 mm以上,工作台設置有氧元素供給口,氧元素供給口連接於用以提供氧元素之管路,自氧元素供給口沿圓筒軸方向供給氧元素且進行燒結,氧元素供給口小於設置於圓筒形成型體之圓筒內側之圓筒內周。而且於其他態樣中,工作台亦可配置於腔室中,用以提供氧元素之管路亦可自腔室之外連接至氧元素供給口。An object of the present invention is to provide a cylindrical sintered body having a length in the direction of a cylindrical axis of 470 mm or more, a cylindrical sputtering target, and a method for manufacturing the same. According to a method for manufacturing a cylindrical sputtering target having a cylindrical sintered body according to an embodiment of the present invention, a cylindrical forming body is arranged on a work table, and the length of the cylindrical forming body in the direction of the cylindrical axis is Above 600 mm, the table is provided with an oxygen element supply port. The oxygen element supply port is connected to a pipeline for supplying oxygen element. The oxygen element supply port supplies and sinters the oxygen element in the direction of the cylinder axis. The oxygen element supply port It is smaller than the inner circumference of the cylinder provided inside the cylinder of the cylindrical forming body. Moreover, in other aspects, the workbench can also be arranged in the chamber, and the pipeline for supplying oxygen element can also be connected to the oxygen element supply port from outside the chamber.

Description

圓筒形濺射靶件及其製造方法Cylindrical sputtering target and manufacturing method thereof

本發明關於一種圓筒形濺射靶件及其製造方法。本發明特別是關於構成圓筒形濺射靶件之圓筒形燒結體之製造方法。The invention relates to a cylindrical sputtering target and a manufacturing method thereof. The present invention particularly relates to a method for manufacturing a cylindrical sintered body constituting a cylindrical sputtering target.

近年來,平面面板顯示器(Flat Panel Display,FPD)或太陽電池之製造技術急速發展,且朝向大型化進展。而且隨著此些產品之市場擴大,而增加了大型玻璃基板之需求。In recent years, the manufacturing technology of flat panel displays (FPDs) or solar cells has developed rapidly, and is progressing toward large-scale. And with the market expansion of these products, the demand for large glass substrates has increased.

特別是用以於大型的玻璃基板形成金屬薄膜或氧化金屬薄膜之濺射裝置中,替換以往之平板形濺射靶件而使用圓筒形(亦可稱為旋轉形或轉動形)濺射靶件。與平板形濺射靶件相比,圓筒形濺射靶件具有靶件使用效率高、少發生腐蝕(erosion)、少發生因堆積物之剝離而造成之顆粒之優點。In particular, in a sputtering device for forming a metal thin film or an oxidized metal thin film on a large glass substrate, a cylindrical (also called a rotating or rotating) sputtering target is used instead of a conventional flat plate sputtering target. Pieces. Compared with the flat-shaped sputtering target, the cylindrical sputtering target has the advantages of high target use efficiency, less erosion, and less particles due to peeling of the deposit.

用以於如上所述之大型玻璃基板形成薄膜之濺射裝置所使用之圓筒形濺射靶件,需要有3000 mm以上之長度。技術上無法實現一體成型製造及研磨加工如此長度之圓筒形濺射靶件。因此,通常會構成由數十mm至數百mm之多個圓筒形燒結體連結而成之分割濺射靶件。The cylindrical sputtering target used in the sputtering device for forming a thin film on a large glass substrate as described above needs to have a length of more than 3000 mm. Technically, it is not possible to achieve integral molding manufacturing and grinding of cylindrical sputtering targets of such a length. Therefore, a divided sputtering target is usually formed by connecting a plurality of cylindrical sintered bodies of several tens mm to several hundreds mm.

於此,不僅上述之圓筒形燒結體,亦會對一般的燒結體之連結要求提升機械強度且提升使用此燒結體之薄膜之品質。多個燒結體接合於基材之場合中,燒結體彼此之間以一定之間隔配置。燒結體若以無間隙之方式配置而接合於基材時,因濺射中之熱而會使燒結體伸縮,故燒結體有時會彼此互擊而產生破裂或碎裂。另一方面,於本來應受到濺射之燒結體中不存在燒結體間之間隙。因此,會發生基材之構成材料受到濺射等之問題,而存在有無法形成預期組成分之薄膜之問題。再者,連結多個燒結體之分割濺射靶件中,相鄰之燒結體間之相對密度差異(亦即燒結體密度之「固體間偏差」)會影響使用此分割濺射靶件之薄膜之品質。如此一來,所連結之燒結體愈短則濺射靶件便會有愈多分割,影響濺射特性之風險愈高。Here, not only the above-mentioned cylindrical sintered body, but also the connection of the general sintered body is required to improve the mechanical strength and the quality of the film using the sintered body. When a plurality of sintered bodies are bonded to a substrate, the sintered bodies are arranged at a constant interval from each other. When the sintered bodies are arranged without gaps and joined to the substrate, the sintered bodies expand and contract due to the heat during sputtering, so the sintered bodies may collide with each other to cause cracking or chipping. On the other hand, there is no gap between the sintered bodies in the sintered body that should be subjected to sputtering. Therefore, there is a problem that the constituent materials of the substrate are subjected to sputtering or the like, and there is a problem that a thin film having a desired composition cannot be formed. Furthermore, in a split sputtering target that connects multiple sintered bodies, the relative density difference between adjacent sintered bodies (that is, the "solid-to-solid deviation" in the density of the sintered body) will affect the film using this split sputtering target Quality. In this way, the shorter the connected sintered body, the more the sputtering target will be divided, and the higher the risk of affecting the sputtering characteristics.

為了至少避免前述之問題,而需要有對應於較少分割濺射靶件而盡可能製造較長之圓筒形燒結體之製造技術。製造長尺寸圓筒形燒結體之問題點,在於燒結體內之相對密度差異(亦即燒結體密度之「固體內偏差」)及機械強度。舉例而言,專利文獻1(專利文獻1:日本專利公開H8-144056號公報)中,揭示ITO靶件之燒結中,氣體環境之氧元素濃度大幅影響靶件品質之穩定(密度及強度)。通常而言,使用於ITO之燒結爐會自爐壁側供給氧氣。In order to avoid at least the foregoing problems, a manufacturing technique for manufacturing a cylindrical sintered body as long as possible corresponding to fewer divided sputtering targets is required. The problems in manufacturing long-sized cylindrical sintered bodies are the relative density difference within the sintered body (ie, the "internal solid deviation" of the density of the sintered body) and the mechanical strength. For example, Patent Document 1 (Patent Document 1: Japanese Patent Publication No. H8-144056) discloses that during the sintering of an ITO target, the concentration of oxygen in the gas environment greatly affects the stability (density and strength) of the target quality. Generally, a sintering furnace used for ITO supplies oxygen from the furnace wall side.

然而,於長尺寸圓筒形燒結體之場合中,因燒結時之圓筒內之氣體對流並不充分,而會發生圓筒內氧元素不足之情形。本發明之一課題在於為了對應較少分割藉由將多個燒結體接合於基材而得到之分割濺射靶件,而以提供一種圓筒軸方向之長度為470 mm以上之圓筒形燒結體、圓筒形濺射靶件及此些之製造方法為一目的。此外,本發明之一目的在於提供一種固體內及個體間之均質性高之圓筒形燒結體、圓筒形濺射靶件及此些之製造方法。However, in the case of a long-sized cylindrical sintered body, the gas convection in the cylinder during sintering is insufficient, and the oxygen element in the cylinder may be insufficient. An object of the present invention is to provide a cylindrical sintering having a length of 470 mm or more in the direction of the cylindrical axis in order to correspond to a divided sputtering target obtained by joining a plurality of sintered bodies to a substrate with less division. The object is a body, a cylindrical sputtering target, and a manufacturing method thereof. In addition, it is an object of the present invention to provide a cylindrical sintered body, a cylindrical sputtering target, and a method for manufacturing the same, which have high homogeneity within and among solids.

根據本發明之一實施型態之圓筒形濺射靶件之製造方法,為於具有圓筒形燒結體之圓筒形濺射靶件之製造方法中,於工作台上配置一圓筒形成型體,圓筒形成型體於圓筒軸方向之長度為600 mm以上,工作台設置有氧元素供給口,氧元素供給口連接於用以提供氧元素之管路,自氧元素供給口沿圓筒軸方向供給氧元素且進行燒結,氧元素供給口小於設置於圓筒形成型體之圓筒內側之圓筒內周。According to a manufacturing method of a cylindrical sputtering target according to an embodiment of the present invention, in the manufacturing method of a cylindrical sputtering target having a cylindrical sintered body, a cylindrical forming type is arranged on a table. The length of the cylinder-shaped body in the direction of the cylinder axis is 600 mm or more. The table is provided with an oxygen element supply port. The oxygen element supply port is connected to a pipeline for supplying oxygen element. The oxygen element is supplied in the direction of the cylinder axis and sintered. The oxygen element supply port is smaller than the inner circumference of the cylinder provided on the inside of the cylinder of the cylinder forming body.

此外,於其他態樣中,工作台亦可配置於腔室中,用以提供氧元素之管路亦可自腔室之外連接至氧元素供給口。In addition, in other aspects, the workbench can also be arranged in the chamber, and the pipeline for supplying oxygen element can also be connected to the oxygen element supply port from outside the chamber.

此外,於其他態樣中,亦可朝向圓筒形成型體之圓筒內側之中空部供給氧元素且進行燒結。In addition, in other aspects, an oxygen element may be supplied to the hollow portion inside the cylinder of the cylindrical forming body and sintered.

此外,於其他態樣中,亦可自圓筒形成型體之圓筒軸方向之下方朝向上方供給氧元素且進行燒結。In addition, in other aspects, an oxygen element may be supplied from below the cylinder axis direction of the cylinder forming body toward upward and sintered.

根據本發明之一實施型態之圓筒形濺射靶件所使用之圓筒形燒結體,為沿圓筒軸方向之長度為470 mm以上之圓筒形燒結體,且沿圓筒軸方向之相對密度差異為0.1 %以內。The cylindrical sintered body used in the cylindrical sputtering target according to an embodiment of the present invention is a cylindrical sintered body having a length of 470 mm or more in the direction of the cylindrical axis and is in the direction of the cylindrical axis. The relative density difference is within 0.1%.

根據本發明之一實施型態之圓筒形濺射靶件所使用之圓筒形燒結體,為沿圓筒軸方向之長度為470 mm以上之圓筒形燒結體,且於圓筒內側面所觀察到之孔洞之面積之等效圓直徑為平均1 μm以下。The cylindrical sintered body used in the cylindrical sputtering target according to an embodiment of the present invention is a cylindrical sintered body having a length of 470 mm or more in the direction of the cylindrical axis, and is on the inner side of the cylinder. The equivalent circle diameter of the area of the observed pores was 1 μm or less on average.

根據本發明之一實施型態之圓筒形濺射靶件所使用之圓筒形燒結體,為沿圓筒軸方向之長度為470 mm以上之圓筒形燒結體,且於圓筒內側面所觀察到之孔洞之數量為平均4.25╳10-5 個/μm2 以下。The cylindrical sintered body used in the cylindrical sputtering target according to an embodiment of the present invention is a cylindrical sintered body having a length of 470 mm or more in the direction of the cylindrical axis, and is on the inner side of the cylinder. The number of the observed pores is 4.25╳10 -5 / μm 2 or less on average.

此外,於其他態樣中,於圓筒內側面所觀察到之孔洞亦可為於圓筒軸方向之中央部之獨立的至少五個位置之視野各為1.176 mm2 所觀察到之孔洞。In addition, in other aspects, the hole observed on the inner side of the cylinder may be a hole observed at 1.176 mm 2 in each of the independent at least five positions in the central portion in the direction of the cylinder axis.

根據本發明,而能夠提供圓筒軸方向之長度為470 mm以上之圓筒形燒結體、圓筒形濺射靶件及此些之製造方法。此外,還能夠提供一種固體內及個體間之均質性高之圓筒形燒結體、圓筒形濺射靶件及此些之製造方法。According to the present invention, it is possible to provide a cylindrical sintered body having a length in the direction of a cylindrical axis of 470 mm or more, a cylindrical sputtering target, and a manufacturing method thereof. In addition, it is also possible to provide a cylindrical sintered body, a cylindrical sputtering target, and a method for manufacturing the same, which have high homogeneity in solids and between individuals.

以下,將參照圖式說明關於本發明之圓筒形濺射靶件及其製造方法。然而,本發明之圓筒形濺射靶件及其製造方法能夠以多種相異態樣實施,而並非限定解釋成以下所例示之實施型態之記載內容。而且,於本實施型態所參照之圖式中,相同部分或具有相同功能之部分將標記相同符號,且將省略其重覆之說明。Hereinafter, a cylindrical sputtering target of the present invention and a method for manufacturing the same will be described with reference to the drawings. However, the cylindrical sputtering target and the method for manufacturing the same according to the present invention can be implemented in a variety of different states, and are not limited to the description content of the implementation modes illustrated below. Moreover, in the drawings referred to in this embodiment, the same parts or parts having the same functions will be marked with the same symbols, and repeated explanations will be omitted.

以下將說明實施形態。Embodiments will be described below.

使用圖1及圖2說明關於本發明之實施型態之圓筒形濺射靶件及圓筒形燒結體之構成及構造之概要。The outline of the structure and structure of the cylindrical sputtering target and cylindrical sintered body concerning embodiment of this invention is demonstrated using FIG.1 and FIG.2.

以下將說明圓筒形濺射靶件之概要。The outline of the cylindrical sputtering target will be described below.

圖1繪示關於本發明之實施型態之圓筒形濺射靶件所包含之圓筒形燒結體之一範例之立體圖。如圖1所示,圓筒形濺射靶件100具有中空構造之多個圓筒形燒結體110。上述多個圓筒形燒結體110經由一定空間而彼此相鄰配置。於此圖1中,為了便於說明,而圖示成放大相鄰之圓筒形燒結體110之空間。圓筒形燒結體110之圓筒內側中空部之細節如圖2所示,導入用以支撐圓筒形燒結體110之圓筒基材130。FIG. 1 is a perspective view showing an example of a cylindrical sintered body included in a cylindrical sputtering target according to an embodiment of the present invention. As shown in FIG. 1, the cylindrical sputtering target 100 has a plurality of cylindrical sintered bodies 110 having a hollow structure. The plurality of cylindrical sintered bodies 110 are arranged adjacent to each other through a certain space. In FIG. 1, for convenience of explanation, the space of the adjacent cylindrical sintered bodies 110 is enlarged. The details of the hollow portion inside the cylinder of the cylindrical sintered body 110 are shown in FIG. 2, and a cylindrical base material 130 for supporting the cylindrical sintered body 110 is introduced.

此外,圓筒形燒結體110之厚度能夠定為6.0 mm以上且為20.0 mm以下。此外,圓筒形燒結體110之圓筒軸方向之長度能夠定為470 mm以上且為1500 mm以下。此外,圓筒形燒結體110之外徑能夠定為147 mm以上且為175 mm以下。此外,圓筒形燒結體110之內徑能夠定為135 mm以下。此外,相鄰之圓筒形燒結體110間之圓筒軸方向之空間能夠定為0.1 mm以上且為0.4 mm以下。The thickness of the cylindrical sintered body 110 can be set to 6.0 mm or more and 20.0 mm or less. In addition, the length in the cylindrical axis direction of the cylindrical sintered body 110 can be set to 470 mm or more and 1500 mm or less. The outer diameter of the cylindrical sintered body 110 can be 147 mm or more and 175 mm or less. The inner diameter of the cylindrical sintered body 110 can be set to 135 mm or less. In addition, the space in the cylindrical axis direction between adjacent cylindrical sintered bodies 110 can be set to be 0.1 mm or more and 0.4 mm or less.

圓筒形燒結體110之材料可例如為由銦、錫及氧元素製成之ITO燒結體(Indium Tin Oxide)、由銦、鋅及氧元素製成之IZO燒結體(Indium Zinc Oxide)、由銦、鎵、鋅及氧元素製成之IGZO燒結體(Indium Gallium Zinc Oxide)、由鋅、鋁及氧元素製成之AZO燒結體(Aluminum Indium Zinc Oxide)、氧化鋅(ZnO)、二氧化鈦(TiO2 )等之燒結體。然而,本發明所採用之圓筒形濺射靶件之圓筒形燒結體可為含有氧元素之陶瓷燒結體,且並非限定於上述組成分。The material of the cylindrical sintered body 110 may be, for example, an ITO sintered body (Indium Tin Oxide) made of indium, tin, and oxygen elements, an IZO sintered body (Indium Zinc Oxide) made of indium, zinc, and oxygen elements, IGZO sintered body (Indium Gallium Zinc Oxide) made of indium, gallium, zinc and oxygen elements, AZO sintered body (Aluminum Indium Zinc Oxide) made of zinc, aluminum and oxygen elements, zinc oxide (ZnO), titanium dioxide (TiO2) 2 ) The sintered body. However, the cylindrical sintered body of the cylindrical sputtering target used in the present invention may be a ceramic sintered body containing an oxygen element, and is not limited to the above composition.

於此,於本實施型態中之圓筒形燒結體110之密度亦可為99.5 %以上。圓筒形燒結體110之密度更可為99.6 %以上。此外,圓筒形燒結體110之固體內沿圓筒軸方向之相對密度差亦可為0.1 %以下。圓筒形燒結體110沿圓筒軸方向之相對密度差更可為0.05 %以下,再更可為0.03 %以下。此外,相鄰之圓筒形燒結體110a及110b間之相對密度差異,亦即圓筒形燒結體之固體間之相對密度差異亦可為0.1 %以下。Here, the density of the cylindrical sintered body 110 in this embodiment may also be 99.5% or more. The density of the cylindrical sintered body 110 may be 99.6% or more. In addition, the relative density difference of the cylindrical sintered body 110 in the solid axis direction may be 0.1% or less. The relative density difference of the cylindrical sintered body 110 along the direction of the cylindrical axis may be 0.05% or less, and still more preferably 0.03% or less. In addition, the relative density difference between the adjacent cylindrical sintered bodies 110a and 110b, that is, the relative density difference between the solids of the cylindrical sintered bodies may be 0.1% or less.

其中,燒結體之密度以相對密度表示。相對密度為根據所量測之密度及理論密度,而以相對密度=(量測密度/理論密度)╳100(%)表示。相對密度差異為根據各個所量測之密度之差異及理論密度,而以相對密度差異=(量測密度差異/理論密度)╳100(%)表示。理論密度則為燒結體之各個構成元素中,自除去氧元素之元素氧化物之理論密度所算出之密度數值。舉例而言,若為ITO靶件,屬於各個構成元素之銦、錫、氧元素中,使用氧化銦(In2 O3 )及氧化錫(SnO2 )做為除去氧元素之銦、錫之氧化物以算出理論密度。其中,自燒結體中之銦及錫之元素分析值(at%或質量%)換算成氧化銦(In2 O3 )及氧化錫(SnO2 )之質量比。舉例而言,換算之結果於氧化銦為90質量%且氧化錫為10質量%之ITO靶件之場合中,理論密度為以(In2 O3 之密度(g/cm3 )╳90+SnO2 之密度(g/cm3 )╳10)/100(g/cm3 )之方式算出。以In2 O3 之理論密度為7.18 g/cm3 且SnO2 之理論密度為6.95 g/cm3 計算,算出理論密度為7.157(g/cm3 )。此外,各個構成元素若含Zn則能夠以ZnO做為氧化物算出,若含Ga則能夠以Ga2 O3 做為氧化物算出。以ZnO之理論密度為5.67 g/cm3 ,且Ga2 O3 之理論密度為5.95 g/cm3 計算。另一方面,量測密度為重量除以體積之數值。燒結體之場合中,可藉由阿基米德法求得體積而算出。能夠藉由圓筒形燒結體110沿圓筒軸方向每隔150 mm切出幅寬40~50 mm之圓筒形量測樣品,且分別算出各個樣品之相對密度,而評價圓筒形燒結體110之固體內沿圓筒軸方向之相對密度差異。The density of the sintered body is expressed as a relative density. The relative density is based on the measured density and theoretical density, and is expressed as relative density = (measured density / theoretical density) ╳ 100 (%). The relative density difference is the difference between the measured density and the theoretical density, and it is expressed as relative density difference = (measured density difference / theoretical density) ╳ 100 (%). The theoretical density is the density value calculated from the theoretical density of the element oxide of the sintered body from which the oxygen element is removed. For example, if it is an ITO target, among the indium, tin, and oxygen elements that belong to each constituent element, indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) are used as the oxides of indium and tin to remove the oxygen element. To calculate the theoretical density. Among them, the elemental analysis value (at% or mass%) of indium and tin in the sintered body is converted into a mass ratio of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ). For example, in the case of an ITO target having 90% by mass of indium oxide and 10% by mass of tin oxide, the theoretical density is calculated as (In 2 O 3 density (g / cm 3 ) ╳90 + SnO 2 Calculated as density (g / cm 3 ) ╳10) / 100 (g / cm 3 ). The theoretical density of In 2 O 3 was 7.18 g / cm 3 and the theoretical density of SnO 2 was 6.95 g / cm 3. The theoretical density was calculated to be 7.157 (g / cm 3 ). In addition, if each constituent element contains Zn, it can be calculated using ZnO as an oxide, and if it contains Ga, it can be calculated using Ga 2 O 3 as an oxide. Calculated based on the theoretical density of ZnO being 5.67 g / cm 3 and the theoretical density of Ga 2 O 3 as 5.95 g / cm 3 . On the other hand, the measured density is the value of weight divided by volume. In the case of a sintered body, the volume can be calculated by Archimedes' method. The cylindrical sintered body 110 can be used to cut out cylindrical measurement samples with a width of 40 to 50 mm every 150 mm along the cylindrical axis direction, and calculate the relative density of each sample to evaluate the cylindrical sintered body. The difference in relative density along the axis of the cylinder in the solid of 110.

如上所述,藉由將圓筒形燒結體之長度及相對密度定於上述之範圍,而能夠提升圓筒形燒結體之機械強度,且能夠於使用圓筒形燒結體時抑制發生結節之情形或抑制伴隨電弧而產生之顆粒,還能夠得到降低薄膜之雜質且提升膜密度之效果。而且,藉由將圓筒形燒結體之固體內及固體間之相對密度差異分別定於上述之範圍,而能夠抑制具有多個圓筒形燒結體之分割濺射靶件中之電場歪曲之情形。因此,能夠於濺射時獲得穩定的放電特性,還能夠於尺寸超過單一個圓筒形燒結體之大型基板形成膜質具有極高面內均勻性之薄膜。As described above, by setting the length and the relative density of the cylindrical sintered body to the above ranges, the mechanical strength of the cylindrical sintered body can be improved, and the occurrence of nodules can be suppressed when using the cylindrical sintered body. Or it can suppress the particles generated by the arc, and can also reduce the impurities of the thin film and increase the density of the film. Furthermore, by setting the relative density difference between the solids and solids of the cylindrical sintered body within the above-mentioned ranges, it is possible to suppress the distortion of the electric field in the divided sputtering target having a plurality of cylindrical sintered bodies. . Therefore, stable discharge characteristics can be obtained during sputtering, and a thin film having extremely high in-plane uniformity can be formed on a large substrate having a size exceeding a single cylindrical sintered body.

圓筒形燒結體110之固體內差異亦包含圓筒形燒結體110之圓筒內側面及外側面之差異。圓筒形燒結體110之圓筒內側面及外側面之狀態能夠藉由電子顯微鏡(SEM)觀察而進行評價。於本實施型態中,於圓筒形燒結體110之圓筒軸方向中央部之圓筒內側面及外側面所觀察到之孔洞未見有顯著差異。於本實施型態中,無論是觀察結晶粒邊界還是結晶內,於圓筒形燒結體110之圓筒內側面及外側面所觀察到之孔洞之形狀為不規則粒形。換言之,於本實施型態中,無論是觀察結晶粒邊界還是結晶內,於圓筒形燒結體110之圓筒內側面及外側面所觀察到之孔洞之形狀為不規則氣泡狀孔洞。另一方面,相較於圓筒軸方向之長度為470 mm以上之比較例中之圓筒形燒結體之圓筒外側面或本實施型態中之圓筒形燒結體110之圓筒內側面及外側面,於比較例中之圓筒內側面觀察到較大之不規則粒形孔洞。換言之,於圓筒軸方向之長度為470 mm以上之比較例中之圓筒形燒結體之圓筒內側面觀察到不規則結晶粒狀孔洞。於如此比較例中之圓筒形燒結體之圓筒內側面所觀察到之孔洞,主要是在結晶粒邊界觀察到。於比較例中之圓筒形燒結體之圓筒外側面與於本實施型態中之圓筒形燒結體110之圓筒內側面及外側面未見有顯著差異。於比較例中,無論是觀察結晶粒邊界還是結晶內,相較於圓筒形燒結體之圓筒內側面所觀察到之孔洞之形狀,圓筒外側面之孔洞具有較小的不規則粒形。The difference in the solids of the cylindrical sintered body 110 also includes the difference between the inner and outer surfaces of the cylinder of the cylindrical sintered body 110. The state of the cylindrical inner surface and the outer surface of the cylindrical sintered body 110 can be evaluated by observation with an electron microscope (SEM). In this embodiment, there are no significant differences in the holes observed at the inner and outer sides of the cylinder at the center of the cylindrical axis direction of the cylindrical sintered body 110. In this embodiment, the shape of the holes observed on the inner and outer surfaces of the cylinder of the cylindrical sintered body 110 is irregular, regardless of the boundaries of the crystal grains or the inside of the crystals. In other words, in the present embodiment, the shape of the pores observed on the inner and outer surfaces of the cylinder of the cylindrical sintered body 110 is irregular bubble-shaped pores regardless of the boundaries of the crystal grains or the inside of the crystal. On the other hand, compared to the cylindrical outer surface of the cylindrical sintered body in the comparative example with a length of 470 mm or more in the direction of the cylindrical axis or the cylindrical inner surface of the cylindrical sintered body 110 in the present embodiment And the outer surface, large irregular granular holes were observed on the inner surface of the cylinder in the comparative example. In other words, irregular crystalline granular holes were observed on the inner side surface of the cylinder of the cylindrical sintered body in the comparative example whose length in the direction of the cylinder axis was 470 mm or more. The pores observed on the inner surface of the cylinder of the cylindrical sintered body in such a comparative example were mainly observed at the boundaries of the crystal grains. There is no significant difference between the outer surface of the cylinder of the cylindrical sintered body in the comparative example and the inner surface and outer surface of the cylinder of the cylindrical sintered body 110 in this embodiment. In the comparative example, whether the crystal grain boundary or the crystal is observed, the holes on the outer side of the cylinder have a smaller irregular grain shape compared to the shape of the holes observed on the inner side of the cylinder of the cylindrical sintered body. .

於本實施型態及比較例中之圓筒形燒結體之圓筒內側面及圓筒外側面所觀察到之各個孔洞之形狀為不規則形狀。因此,可算出俯視連續的單一個孔洞時之面積,再以具有等效面積之圓之直徑(以下,將稱為孔洞之面積之等效圓直徑)評價孔洞之尺寸。亦可於所觀察之表面中以連續的單一個孔洞視為單一個,以算出孔洞之數量。本實施型態中之圓筒形燒結體110之圓筒內側面所觀察到之孔洞之面積之等效圓直徑亦可為平均1 μm以下。圓筒形燒結體110之圓筒內側面所觀察到之孔洞之面積之等效圓直徑更可為平均0.5 μm以下。此外,於本實施型態中之圓筒形燒結體110之圓筒內側面所觀察到之孔洞之數量亦可為平均4.25╳10-5 個/μm2 以下。圓筒形燒結體110之圓筒內側面所觀察到之孔洞之數量更可為平均2.125╳10-5 個/μm2 以下。而且,本實施型態中之圓筒形燒結體110之圓筒外側面所觀察到之孔洞之面積之等效圓直徑亦可為平均1 μm以下。圓筒形燒結體110之圓筒外側面所觀察到之孔洞之面積之等效圓直徑更可為平均0.5 μm以下。此外,於本實施型態中之圓筒形燒結體110之圓筒外側面所觀察到之孔洞之數量亦可為平均4.25╳10-5 個/μm2 以下。圓筒形燒結體110之圓筒外側面所觀察到之孔洞之數量更可為平均2.125╳10-5 個/μm2 以下。The shape of each hole observed on the inner side surface and outer side surface of the cylinder of the cylindrical sintered body in this embodiment and the comparative example is an irregular shape. Therefore, it is possible to calculate the area of a single continuous hole in plan view, and then evaluate the size of the hole by the diameter of a circle having an equivalent area (hereinafter, the equivalent circle diameter of the area of the hole). A single continuous hole can be regarded as a single one in the observed surface to calculate the number of holes. The equivalent circle diameter of the area of the pores observed on the inner surface of the cylinder of the cylindrical sintered body 110 in the present embodiment may also be 1 μm or less on average. The equivalent circle diameter of the area of the pores observed on the inner surface of the cylinder of the cylindrical sintered body 110 may be 0.5 μm or less on average. In addition, the number of pores observed on the inner side surface of the cylinder of the cylindrical sintered body 110 in the present embodiment may be an average of 4.25╳10 -5 holes / μm 2 or less. The number of pores observed on the inner surface of the cylinder of the cylindrical sintered body 110 may be 2.125╳10 -5 holes / μm 2 or less on average. In addition, the equivalent circle diameter of the area of the pores observed on the cylindrical outer surface of the cylindrical sintered body 110 in the present embodiment may be 1 μm or less on average. The equivalent circle diameter of the area of the pores observed on the outer surface of the cylinder of the cylindrical sintered body 110 may be 0.5 μm or less on average. In addition, the number of pores observed on the outer surface of the cylinder of the cylindrical sintered body 110 in the present embodiment may be 4.25 平均 10 -5 holes / μm 2 or less on average. The number of holes observed on the outer surface of the cylinder of the cylindrical sintered body 110 may be 2.125╳10 -5 holes / μm 2 or less on average.

其中,關於圓筒形燒結體110之圓筒內側面及外側面之狀態之評價,為於各個樣品之圓筒軸方向之中央部中觀察五個980 μm╳1200 μm之視野,以評價孔洞之數量及孔洞之面積之等效圓直徑之平均值。首先算出連續的單一個孔洞之投影面積S,再以下述算式算出具有等效面積之圓之直徑L而能夠得到孔洞之面積S之等效圓直徑L。Among them, the evaluation of the state of the inner and outer sides of the cylinder of the cylindrical sintered body 110 was performed by observing five fields of view of 980 μm ╳ 1200 μm in the central portion in the direction of the cylindrical axis of each sample to evaluate the hole The average value of the equivalent circle diameter of the number and the area of the hole. First, the continuous projected area S of a single hole is calculated, and then the diameter L of a circle having an equivalent area can be calculated by the following formula to obtain the equivalent circle diameter L of the area S of the hole.

算式1:Equation 1: .

於本實施型態中,於圓筒形燒結體110之圓筒軸方向中央部之圓筒內側面及外側面所觀察到之結晶粒子之尺寸未見有顯著差異。於本實施型態中之圓筒形燒結體110之圓筒內側面及外側面所觀察到之結晶粒子大型成長。另一方面,相較於圓筒軸方向之長度為957 mm以上之比較例中之圓筒形燒結體之圓筒外側面,於比較例中之圓筒內側面之結晶粒子較小,而觀察到成長初期階段之結晶粒子。由於如此比較例中之圓筒形燒結體之圓筒內側面之結晶粒子處於成長初期階段,故結晶粒子較小、不均勻且欠缺平滑性。In this embodiment, there is no significant difference in the size of the crystal particles observed on the inner and outer surfaces of the cylinder at the center portion of the cylindrical axis direction of the cylindrical sintered body 110. The large-scale growth of crystal particles observed on the inner and outer surfaces of the cylinder of the cylindrical sintered body 110 in this embodiment. On the other hand, compared with the cylindrical outer surface of the cylindrical sintered body in the comparative example whose length in the direction of the cylindrical axis is 957 mm or more, the crystal particles on the cylindrical inner surface of the comparative example are smaller and observed. Crystal grains in the early stages of growth. Since the crystal particles on the inner surface of the cylinder of the cylindrical sintered body in such a comparative example are in the initial growth stage, the crystal particles are small, uneven and lack smoothness.

細節雖將於製造方法中說明,但能夠藉由沿圓筒軸方向對圓筒形成型體供給氧元素且進行燒結,而得到上述之圓筒形燒結體。Although the details will be described in the manufacturing method, the cylindrical sintered body can be obtained by supplying an oxygen element to the cylindrical forming body along the direction of the cylindrical axis and sintering it.

圖2繪示關於本發明之實施型態之組裝後之圓筒形濺射靶件之構成之一範例之剖視圖。如圖2所示,組裝後之圓筒形濺射靶件100中,於圖1所示之圓筒形燒結體110之圓筒內側中空部配置圓筒基材130。藉由硬焊材140裝設圓筒基材130及圓筒形燒結體110,且經由空間120配置相鄰之圓筒形燒結體110。FIG. 2 is a cross-sectional view showing an example of the structure of a cylindrical sputtering target after assembly according to an embodiment of the present invention. As shown in FIG. 2, in the cylindrical sputtering target 100 after assembly, a cylindrical base material 130 is disposed in a hollow portion inside the cylinder of the cylindrical sintered body 110 shown in FIG. 1. The cylindrical base material 130 and the cylindrical sintered body 110 are mounted with the brazing material 140, and the adjacent cylindrical sintered bodies 110 are arranged through the space 120.

圓筒基材130之材料能夠使用具有足以對靶件施加偏壓之導電性且具有高熱傳導率之金屬材料,以能夠於對靶件濺射時有效率地逸散因電子或離子撞擊靶件所產生之熱。具體而言,能夠使用銅(Cu)、鈦(Ti)、含有此些元素之合金及不鏽鋼(SUS)。The material of the cylindrical substrate 130 can be a metal material having conductivity sufficient to bias the target and high thermal conductivity, so as to efficiently dissipate electrons or ions when hitting the target when sputtering the target. The heat generated. Specifically, copper (Cu), titanium (Ti), an alloy containing these elements, and stainless steel (SUS) can be used.

硬焊材140之材料能夠使用具有得將圓筒形燒結體110充分維持於圓筒基材130之附著力及強度之材料,且此材料與圓筒基材130同樣地可具有導電性及高熱傳導率。然而,硬焊材140之材料之熱傳導率亦可低於圓筒基材130之材料之熱傳導率。而且,硬焊材140之材料之導電性亦可低於圓筒基材130之材料之導電性。硬焊材140能夠例如使用銦(In)、錫(Sn)及含有此些元素之合金。As the material of the brazing material 140, a material having sufficient adhesion and strength to maintain the cylindrical sintered body 110 on the cylindrical base material 130 can be used, and this material can have the same conductivity and high conductivity as the cylindrical base material 130. Thermal conductivity. However, the thermal conductivity of the material of the brazing material 140 may also be lower than that of the material of the cylindrical substrate 130. In addition, the conductivity of the material of the brazing material 140 may be lower than that of the material of the cylindrical substrate 130. As the brazing material 140, for example, indium (In), tin (Sn), and an alloy containing these elements can be used.

如上所述,根據關於本實施型態之濺射靶件,藉由將圓筒形燒結體之長度及相對密度定於上述之範圍,而能夠提升圓筒形燒結體之機械強度,且能夠得到降低使用此圓筒形燒結體之薄膜之雜質且提升膜密度之效果。而且,藉由將圓筒形燒結體之固體內及固體間之相對密度差異分別定於上述之範圍,而能夠抑制具有多個圓筒形燒結體之分割濺射靶件中之電場歪曲之情形。因此,能夠於濺射時獲得穩定的放電特性,還能夠於尺寸超過單一個圓筒形燒結體之大型基板形成膜質具有極高面內均勻性之薄膜。再者,藉由圓筒形燒結體之圓筒內側面及圓筒外側面之狀態分別定於上述之範圍,而能夠穩定圓筒形燒結體於分割濺射靶件中之靶件整體生命期,以維持品質。亦即持續使用靶件之途中可不發生特性變化,而能夠抑制因密度不良而造成之結節或顆粒。As described above, according to the sputtering target of the present embodiment, the mechanical strength of the cylindrical sintered body can be improved by setting the length and relative density of the cylindrical sintered body to the above-mentioned ranges, and can obtain The effect of reducing the impurities of the thin film using the cylindrical sintered body and increasing the film density. Furthermore, by setting the relative density difference between the solids and solids of the cylindrical sintered body within the above-mentioned ranges, it is possible to suppress the distortion of the electric field in the divided sputtering target having a plurality of cylindrical sintered bodies. . Therefore, stable discharge characteristics can be obtained during sputtering, and a thin film having extremely high in-plane uniformity can be formed on a large substrate having a size exceeding a single cylindrical sintered body. Furthermore, the states of the inside and outside surfaces of the cylinder of the cylindrical sintered body are set in the above-mentioned ranges, respectively, so that the entire life of the target of the cylindrical sintered body in the divided sputtering target can be stabilized. To maintain quality. In other words, the characteristics of the target are not changed during continuous use, and nodules or particles caused by poor density can be suppressed.

以下將說明圓筒形燒結體之製造方法。A method of manufacturing the cylindrical sintered body will be described below.

接下來,針對關於本發明之圓筒形濺射靶件之圓筒形燒結體之製造方法,將使用圖3進行詳細說明。圖3繪示關於本發明之實施型態之圓筒形燒結體之製造方法之流程圖。圖3中雖例示ITO燒結體之製造方法,但燒結體之材料並非限定於ITO,亦能夠使用IGZO等之其他氧化金屬燒結體。Next, the manufacturing method of the cylindrical sintered body of the cylindrical sputtering target of this invention is demonstrated in detail using FIG. 3. FIG. FIG. 3 shows a flowchart of a method for manufacturing a cylindrical sintered body according to an embodiment of the present invention. Although FIG. 3 illustrates a method for manufacturing an ITO sintered body, the material of the sintered body is not limited to ITO, and other oxidized metal sintered bodies such as IGZO can also be used.

首先,準備原料。用於混合之原料例如可使用氧化物或合金等所含有之金屬元素。原料能夠使用粉末狀之原料,且能夠根據目標之濺射靶件之組成分而適當選擇原料。例如ITO之場合中,準備氧化銦之粉末及氧化錫之粉末(步驟S301及S302)。此些原料之純度,通常為2N(99質量%)以上,亦可為3N(99.9質量%)以上,更可為4N(99.99質量%)以上。由於純度低於2N時圓筒形燒結體會含有大量的雜質,故會發生不易得到預期的物質特性等問題(例如通透性降低、薄膜之電阻值增加、局部含有異物及伴隨電弧現象而產生顆粒)。First, prepare the ingredients. As a raw material for mixing, for example, a metal element contained in an oxide or an alloy can be used. The raw material can be a powder material, and the raw material can be appropriately selected according to the composition of the target sputtering target. In the case of ITO, for example, indium oxide powder and tin oxide powder are prepared (steps S301 and S302). The purity of these raw materials is usually 2N (99% by mass) or more, 3N (99.9% by mass) or more, and 4N (99.99% by mass) or more. Since the cylindrical sintered body contains a large amount of impurities when the purity is lower than 2N, problems such as difficulty in obtaining desired material characteristics (such as reduced permeability, increased resistance value of the film, localized foreign matter, and particles due to arcing) may occur. ).

接下來,粉碎並混合此些原料粉末(步驟S303)。原料粉末之粉碎混合處理,能夠使用氧化鋯(zirconia)、氧化鋁(alumina)、尼龍(nylon)樹脂等之球體或珠體進行乾式法,亦能夠使用利用上述球體或珠體之媒介攪拌式研磨器、無媒介之容器迴轉式研磨器、機械攪拌式研磨器、氣流式研磨器等進行濕式法。一般而言,由於濕式法之粉碎及混合能力優於乾式法,故此處可使用濕式法進行混合。Next, these raw material powders are crushed and mixed (step S303). The raw powder can be pulverized and mixed. It can be dry-processed using spheres or beads of zirconia, alumina, nylon resin, etc. It can also be agitated and ground using the medium of the spheres or beads. The wet method is carried out by a rotary grinder, a containerless grinder, a mechanical agitator grinder, and an air flow grinder. Generally speaking, the wet method has better crushing and mixing ability than the dry method, so the wet method can be used for mixing here.

關於原料之組成分雖並未特別限制,但可對應於目標之濺射靶件之組成分比例進行適當調整。Although the composition of the raw materials is not particularly limited, it can be appropriately adjusted according to the composition ratio of the target sputtering target.

於此,若使用細微粒徑之原料粉末則能夠高密度化燒結體。強化粉碎條件雖然能夠得到細微粉末,但若如此亦會導致使用於粉碎時之媒介(氧化鋯等)之混入量增加,而有導致製品內之雜質濃度上升之虞慮。如此一來,必須一邊觀察燒結體之高密度化及製品內之雜質濃度之平衡,一邊設置粉碎時之條件至適當的範圍。Here, if a raw material powder having a fine particle diameter is used, the sintered body can be made denser. Although fine powder can be obtained by strengthening the pulverization conditions, if this is the case, the amount of the medium (such as zirconia) used in the pulverization will increase, and the concentration of impurities in the product may increase. In this way, it is necessary to set the conditions at the time of pulverization to an appropriate range while observing the high density of the sintered body and the balance of the impurity concentration in the product.

接下來,乾燥原料粉末之漿料以進行造粒(步驟S304)。此時,亦可使用急速乾燥造粒方式對漿料進行急速乾燥。進行急速乾燥造粒方式時,可使用噴霧乾燥機(spray dryer),且可調整熱風之溫度及風量。由於原料粉末之比重差異會造成沉降速度相異,故藉由使用急速乾燥造粒方式,而能夠抑制氧化銦粉末及氧化錫粉末分離。藉由如此之造粒方式,可使配方成份之比例均勻,進而提升原料粉末之操作(handling)性。此外,造粒之前後亦可進行素燒處理。Next, the slurry of the raw material powder is dried for granulation (step S304). In this case, the slurry may be rapidly dried using a rapid drying granulation method. For the rapid drying granulation method, a spray dryer can be used, and the temperature and volume of hot air can be adjusted. The difference in the specific gravity of the raw material powder will cause the sedimentation speed to be different, so by using a rapid drying granulation method, the separation of the indium oxide powder and the tin oxide powder can be suppressed. With such a granulation method, the proportion of the formula ingredients can be made uniform, thereby improving the handling of the raw material powder. In addition, the sintering process may be performed before and after granulation.

接下來,將藉由上述混合及造粒之工程而得到之混合物(設置有素燒工程時於經過素燒工程之後)加壓成形,而形成為圓筒形成型體(步驟S305)。藉由此工程,可成型為目標濺射靶件之適當形狀。圓筒形成型體沿圓筒軸方向之長度能夠為600 mm以上。成型處理雖可例如為模具成型、鑄造成型、射出成型等方式,但為了得到如圓筒形之複雜形狀,可藉由冷均壓加壓(CIP)等方式進行成型。藉由CIP成型時,首先將以指定重量秤重之原料粉填充於橡膠模具。此時,藉由一邊搖動並輕叩橡膠模具一邊填充,而能夠避免模具內之原料粉填充不均或產生空隙。藉由CIP成型時之壓力,可為100 MPa以上且為200 MPa以下。藉由調整如上所述之成型時之壓力,而於本實施型態中能夠形成具有54.5 %以上且58.0 %以下之相對密度之圓筒形成型體。更甚者,於CIP成型時之壓力調整為150 MPa以上且為180 MPa以下時,可得到具有55.0 %以上且57.5 %以下之相對密度之圓筒形成型體。Next, the mixture obtained by the above-mentioned mixing and granulation process (after the sintering process is provided when the sintering process is provided) is press-molded to form a cylindrical forming body (step S305). Through this process, it can be formed into an appropriate shape of the target sputtering target. The length of the cylindrical forming body in the direction of the cylindrical axis can be 600 mm or more. The molding process may be, for example, mold molding, casting molding, injection molding, etc., but in order to obtain a complex shape such as a cylindrical shape, molding may be performed by means of cold equal pressure (CIP). When molding by CIP, first fill the rubber mold with the raw material powder weighed by the specified weight. At this time, by shaking and tapping the rubber mold while filling, it is possible to avoid uneven filling of raw material powder in the mold or generation of voids. The pressure during CIP molding can be 100 MPa or more and 200 MPa or less. By adjusting the pressure at the time of molding as described above, in this embodiment, a cylindrical forming body having a relative density of 54.5% or more and 58.0% or less can be formed. Furthermore, when the pressure during CIP molding is adjusted to 150 MPa or more and 180 MPa or less, a cylinder-shaped body having a relative density of 55.0% or more and 57.5% or less can be obtained.

接下來,燒結於成型工程所得到之圓筒形成型體(步驟S306)。於此,將使用圖4至圖6詳細說明關於燒結圓筒形成型體之方法。圖4繪示關於本發明之實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之立體圖。圖5繪示關於本發明之實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之剖視圖。此外,圖6繪示關於本發明之實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之俯視圖。Next, the cylindrical forming body obtained in the molding process is sintered (step S306). Here, a method for forming a sintered cylinder forming body will be described in detail using FIGS. 4 to 6. FIG. 4 is a perspective view showing a process of sintering a cylindrically formed body in a method of manufacturing a cylindrical sintered body according to an embodiment of the present invention. FIG. 5 is a cross-sectional view illustrating a process of sintering a cylinder-forming body in a method for manufacturing a cylindrical sintered body according to an embodiment of the present invention. In addition, FIG. 6 is a plan view showing a process of sintering a cylindrically formed body in a method for manufacturing a cylindrically sintered body according to an embodiment of the present invention.

首先,如圖4所示,於以圓筒形成型體111之圓筒軸方向略為垂直於平板狀之燒結工作台200之方式站立之狀態,將於步驟S305之成型工程中所得到之圓筒形成型體111配置於燒結工作台200。然而,只要能夠將圓筒形成型體111穩定地配置於燒結工作台200上,則並非限定於此。舉例而言,圓筒形成型體111亦可於傾斜之狀態下配置於燒結工作台200。此外,雖於圖4中省略,於燒結圓筒形成型體111時,圓筒形成型體111與燒結工作台200之間亦可配置間隔件。此場合中,間隔件亦可配置成以小於圓筒形成型體111之底面150之面積接觸於底面150。藉由配置間隔件,即使圓筒形成型體111之體積於燒結工程中縮小,亦能夠抑制因移動而造成之磨擦係數。因此,能夠抑制於燒結後之圓筒形燒結體所產生之內部應力。First, as shown in FIG. 4, in a state where the cylinder axis direction of the cylindrical forming body 111 is slightly perpendicular to the flat plate-shaped sintering table 200, the cylinder obtained in the molding process of step S305 The forming body 111 is disposed on the sintering table 200. However, as long as the cylindrical forming body 111 can be stably arranged on the sintering table 200, it is not limited to this. For example, the cylindrical forming body 111 may be disposed on the sintering table 200 in an inclined state. In addition, although omitted in FIG. 4, when the cylindrical forming body 111 is sintered, a spacer may be disposed between the cylindrical forming body 111 and the sintering table 200. In this case, the spacer may be arranged to contact the bottom surface 150 with an area smaller than the bottom surface 150 of the cylindrical forming body 111. By arranging the spacer, even if the volume of the cylindrical forming body 111 is reduced in the sintering process, the friction coefficient caused by the movement can be suppressed. Therefore, the internal stress generated in the cylindrical sintered body after sintering can be suppressed.

如圖5及圖6所示,將於步驟S305之成型工程中所得到之圓筒形成型體111配置於腔室300所具備之燒結工作台200上。將設置於板狀燒結工作台200之氧元素供給口230配置於圓筒中心,且以此狀態燒結圓筒形成型體111。考量到圓筒形成型體111可能因燒結工程而縮小,故氧元素供給口230可小於圓筒形成型體111之內周,而能夠對圓筒內側面供給氧元素。而且,氧元素供給口230配置成自圓筒形成型體111之圓筒軸方向之下方朝向上方供給氧元素。設置於燒結工作台200之開口部亦可僅為氧元素供給口230。單一個氧元素供給口230可與用以供給氧元素之單一個管路240直接連接。管路240例如經由控制器、閥門等而自腔室300之外連接至氧元素供給口230。亦即,自管路240供給之氧元素不會自燒結工作台200之其他區域露出,而自氧元素供給口230選擇性地對圓筒內側面供給氧氣。藉由如此之構成,能夠依據圓筒形成型體111沿圓筒軸方向之長度、厚度及圓筒內部空間之尺寸,而適當調節自氧元素供給口230供給之氧元素量。舉例而言,圓筒軸方向之長度愈長,則自氧元素供給口230供給之氧元素量亦可愈多。然而並非限定於此,例如於圓筒形成型體111之厚度較厚之場合中,則自氧元素供給口230供給之氧元素量亦可較多。另外例如於圓筒形燒結體之內徑較大或圓筒內部空間較大之場合中,自氧元素供給口230供給之氧元素量亦可較多。As shown in FIGS. 5 and 6, the cylindrical forming body 111 obtained in the molding process of step S305 is arranged on the sintering table 200 provided in the chamber 300. The oxygen element supply port 230 provided on the plate-shaped sintering table 200 is arranged at the center of the cylinder, and the cylinder-shaped molding 111 is sintered in this state. Considering that the cylindrical forming body 111 may be reduced due to the sintering process, the oxygen element supply port 230 may be smaller than the inner periphery of the cylindrical forming body 111, so that oxygen elements can be supplied to the inner side surface of the cylinder. In addition, the oxygen element supply port 230 is arranged to supply an oxygen element upward from below the cylinder axis direction of the cylindrical forming body 111. The opening provided in the sintering table 200 may be only the oxygen element supply port 230. A single oxygen element supply port 230 may be directly connected to a single pipe 240 for supplying an oxygen element. The line 240 is connected to the oxygen element supply port 230 from outside the chamber 300 via a controller, a valve, or the like, for example. That is, the oxygen element supplied from the pipeline 240 is not exposed from other areas of the sintering table 200, and the oxygen element supply port 230 selectively supplies oxygen to the inner side surface of the cylinder. With such a configuration, the amount of oxygen element supplied from the oxygen element supply port 230 can be appropriately adjusted in accordance with the length, thickness, and size of the internal space of the cylinder in the cylindrical axis direction of the cylindrical forming body 111. For example, the longer the length in the direction of the cylinder axis, the greater the amount of oxygen element supplied from the oxygen element supply port 230. However, it is not limited to this. For example, when the thickness of the cylindrical forming body 111 is thick, the amount of oxygen element supplied from the oxygen element supply port 230 may be large. In addition, for example, in a case where the inner diameter of the cylindrical sintered body is large or the internal space of the cylinder is large, the amount of oxygen element supplied from the oxygen element supply port 230 may be large.

自氧元素供給口230供給之氧元素量之上限並未特別限定,但亦可為150 L/min以下。藉由單一個氧元素供給口230供給大量之氧元素時,因氧元素之冷卻效果,而可能會發生燒結中之圓筒形燒結體之變形、破裂或燒結後之圓筒形燒結體之密度降低等之問題。因此,自氧元素供給口230之於氧元素行進方向上亦可配置擋板等元件。自氧元素供給口230供給之氧元素因撞擊到擋板等元件,故亦可於圓筒內部空間中擴散。再者,自氧元素供給口230供給之氧元素亦可於管路等循環中預先加熱再進行供給。The upper limit of the amount of the oxygen element supplied from the oxygen element supply port 230 is not particularly limited, but may be 150 L / min or less. When a large amount of oxygen element is supplied through a single oxygen element supply port 230, the cooling effect of the oxygen element may cause deformation, cracking, or density of the cylindrical sintered body during sintering. Problems such as reduction. Therefore, the self-oxygen element supply port 230 may be provided with elements such as a baffle in the direction in which the oxygen element travels. The oxygen element supplied from the oxygen element supply port 230 can also diffuse into the internal space of the cylinder because it collides with elements such as the baffle. Furthermore, the oxygen element supplied from the oxygen element supply port 230 may be heated in advance in a cycle such as a pipeline and then supplied.

空氣氣體環境下於圓筒內側中空部供給氧元素之場合中,由於氧元素較氮元素重,故可自圓筒軸方向之下方逐漸充滿氧元素。因此,能夠對於燒結中之圓筒形成型體之圓筒內側面供給均勻的氧元素。氧元素充滿圓筒形成形體之圓筒內側中空部時,再進一步供給之氧元素可經由圓筒內側中空部自圓筒形成型體之上方流出至圓筒外側。所流出之氧元素可於腔室300之頂棚部分朝向下方流動,而於腔室300內產生氧元素之循環流動。因此,亦可使腔室300內之氧元素濃度均勻。此外,自腔室300之壁部亦可對圓筒外側供給氧元素。此場合中,藉由分別調節對於圓筒內側中空部之氧元素供給量及對於圓筒外側之氧元素供給量,而能夠使燒結中之圓筒形成型體之圓筒內側面及外側面之氧元素濃度均勻。In the case where oxygen is supplied to the hollow portion inside the cylinder in an air gas environment, since the oxygen element is heavier than the nitrogen element, the oxygen element can be gradually filled from below the cylinder axis direction. Therefore, it is possible to supply a uniform oxygen element to the inner surface of the cylinder of the cylindrical forming body during sintering. When the oxygen element fills the hollow part inside the cylinder of the cylindrical forming body, the oxygen element that is further supplied can flow out from above the cylindrical forming body to the outside of the cylinder through the hollow part inside the cylinder. The outflowing oxygen element can flow downward from the ceiling portion of the chamber 300, and a cyclic flow of the oxygen element can be generated in the chamber 300. Therefore, the oxygen element concentration in the chamber 300 can also be made uniform. In addition, an oxygen element may be supplied from the wall portion of the chamber 300 to the outside of the cylinder. In this case, by adjusting the oxygen element supply amount to the hollow portion inside the cylinder and the oxygen element supply amount to the outside of the cylinder, the inner and outer sides of the cylinder of the sintered cylinder forming body can be adjusted. The oxygen element concentration is uniform.

於此,雖於圖4中例示自下方對於圓筒形成型體111之圓筒內側中空部供給氧元素之方法,但並非限定於此方法。舉例而言,亦可自圓筒軸方向之下方或上方供給氧元素。藉由沿圓筒形成型體111之圓筒軸方向供給氧元素,而能夠於燒結中沿圓筒軸方向均勻地保持氧元素濃度。Here, although the method of supplying an oxygen element to the hollow part inside the cylinder of the cylindrical formation body 111 from below is illustrated in FIG. 4, it is not limited to this method. For example, the oxygen element may be supplied from below or above the direction of the cylinder axis. By supplying the oxygen element along the cylindrical axis direction of the cylindrical forming body 111, the oxygen element concentration can be uniformly maintained in the cylindrical axis direction during sintering.

此外,雖於圖4中例示自單一配置於圓筒形成型體111之圓筒中心之氧元素供給口230供給氧元素之方法,但並非限定於此方法。只要能夠對圓筒內側中空部均勻地供給氧元素,氧元素供給口230並限定於圓筒中心。氧元素供給口230之數量亦可為多個。此外,不僅對於圓筒內側供給氧元素,亦可對於圓筒外側供給氧元素。此時,各個氧元素供給口230可彼此獨立並能夠控制氧元素供給量,且可分別與用以供給氧元素之管路240直接連接。藉此,能夠依據圓筒形成型體111沿圓筒軸方向之長度、厚度、圓筒內部空間之尺寸及氧元素供給口230相對於圓筒形成型體111之位置,而適當調節自各個氧元素供給口230供給之氧元素量。In addition, although the method of supplying an oxygen element from the oxygen element supply port 230 arranged in the center of the cylinder of the cylindrical formation body 111 singlely is illustrated in FIG. 4, it is not limited to this method. As long as the oxygen element can be uniformly supplied to the hollow portion inside the cylinder, the oxygen element supply port 230 is limited to the center of the cylinder. The number of the oxygen element supply ports 230 may be plural. The oxygen element may be supplied not only to the inside of the cylinder but also to the outside of the cylinder. At this time, the respective oxygen element supply ports 230 can be independent of each other and can control the amount of oxygen element supply, and can be directly connected to the pipelines 240 for supplying oxygen elements, respectively. Thereby, according to the length, thickness of the cylindrical forming body 111 in the direction of the cylindrical axis, the size of the internal space of the cylinder, and the position of the oxygen element supply port 230 with respect to the cylindrical forming body 111, it is possible to appropriately adjust the respective oxygen The amount of oxygen element supplied from the element supply port 230.

一般而言,於ITO之燒結中,必須於氧元素氣體環境進行燒結而使得燒結體高密度化。即使於氧元素氣體環境下進行燒結,於燒結長度為600 mm以上之圓筒形成型體111之工程中,因圓筒內側中空部之氣體對流並不充分,而會發生圓筒內側中空部之氧元素不足之情形。若圓筒內側中空部之氧元素不足,可能會發生燒結中之圓筒形燒結體之變形、破裂或燒結後之圓筒形燒結體之密度降低、圓筒形燒結體沿圓筒軸方向之相對密度差異增加、於圓筒形燒結體之圓筒內側面所觀察到之孔洞尺寸或孔洞數量增加等之問題。為了阻止因內側中空部之氧元素不足所造成之影響,於本實施型態中如上述構成於燒結圓筒形成型體111時,藉由自氧元素供給口230對於圓筒形成型體111之圓筒內側中空部供給氧元素,而能夠對於600 mm以上之圓筒形成型體111之圓筒內側中空部均勻地充滿氧元素。再者,藉由組合對於圓筒內側中空部之氧元素供給即對於圓筒外側之氧元素供給,而能夠使燒結中之圓筒形成型體111之圓筒內側面及外側面之氧元素濃度均勻。如此之結果,能夠防止燒結中之圓筒形燒結體之變形、破裂。而且,能夠提升燒結後之圓筒形燒結體之密度。再者,能夠降低圓筒形燒結體之固體內沿圓筒軸方向之相對密度差異。還能夠縮減圓筒內側面之孔洞之尺寸及數量。Generally, in the sintering of ITO, it is necessary to perform sintering in an oxygen element gas environment to increase the density of the sintered body. Even if the sintering is performed in an oxygen gas atmosphere, in the process of sintering a cylindrical forming body 111 having a length of 600 mm or more, gas convection in the hollow portion inside the cylinder is insufficient, and the hollow portion inside the cylinder may occur. Insufficient oxygen. If the oxygen content in the hollow part inside the cylinder is insufficient, the cylindrical sintered body may be deformed, cracked during sintering, or the density of the cylindrical sintered body may be reduced after sintering. Problems such as an increase in the relative density difference, an increase in the size of the pores or an increase in the number of pores observed on the inside surface of the cylinder of the cylindrical sintered body, and the like. In order to prevent the influence caused by the insufficient oxygen element in the inner hollow portion, in the present embodiment, as described above, when the sintered cylinder forming body 111 is formed, the self-oxygen element supply port 230 is used for the cylinder forming body 111. The hollow portion on the inner side of the cylinder supplies oxygen element, and the hollow portion on the inner side of the cylinder can be uniformly filled with the oxygen element for the cylindrical forming body 111 having a diameter of 600 mm or more. Furthermore, by combining the supply of oxygen elements to the hollow portion inside the cylinder, that is, the supply of oxygen elements to the outside of the cylinder, the concentration of oxygen elements on the inside and outside surfaces of the cylinder of the sintered cylinder-forming body 111 can be made. Even. As a result, deformation and cracking of the cylindrical sintered body during sintering can be prevented. Moreover, the density of the cylindrical sintered body after sintering can be increased. Furthermore, it is possible to reduce the difference in relative density in the solid of the cylindrical sintered body along the direction of the cylindrical axis. It can also reduce the size and number of holes on the inner side of the cylinder.

以下將回到圖3繼續說明圓筒形燒結體之製造方法。於上所說明之細節中,能夠使用電爐、熱均壓加壓(HIP)或微波燒結等方式進行步驟S306之燒結。雖能夠依據燒結體之組成分而適當選擇燒結條件,但例如於含有10 wt·%之SnO2 之ITO時,能夠以氧元素氣體環境下於溫度為攝氏1500度以上且1600度以下並持續10小時以上且20小時以下之條件進行燒結。燒結溫度未滿攝氏1500度之場合中,可能會導致靶件之密度下降。另一方面,若超過攝氏1600度,則對於電爐或爐材之傷害會變大而必須適時地維護,故可能會導致作業效率顯著下降。而且,燒結時間若未滿10小時則可能會導致靶件之密度下降,若大於20小時則會延長燒結工程中之維持時間,而可能惡化電爐之運作效率。而且,還可能會增加燒結工程中所使用之氧元素氣體之消耗量,且增加用於運作電爐之電力。此外,燒結時之壓力可為大氣壓力,亦可為減壓氣體環境或加壓氣體環境。The method of manufacturing the cylindrical sintered body will be described below with reference to FIG. 3. In the details described above, the sintering of step S306 can be performed by using an electric furnace, hot equal pressure (HIP), or microwave sintering. Although the sintering conditions can be appropriately selected according to the composition of the sintered body, for example, when ITO containing 10 wt ·% SnO 2 is used, the temperature can be 1500 ° C to 1600 ° C for 10 minutes in an oxygen element gas environment for 10 minutes. The sintering is performed under the conditions of more than hours and less than 20 hours. Where the sintering temperature is less than 1500 ° C, the density of the target may decrease. On the other hand, if it exceeds 1600 degrees Celsius, the damage to the electric furnace or the furnace material will be increased, and it must be maintained in a timely manner, which may cause a significant reduction in work efficiency. In addition, if the sintering time is less than 10 hours, the density of the target may be reduced. If it is longer than 20 hours, the maintenance time in the sintering process will be prolonged, and the operation efficiency of the electric furnace may be deteriorated. In addition, it may increase the consumption of oxygen element gas used in the sintering process, and increase the electricity used to operate the electric furnace. In addition, the pressure during sintering may be atmospheric pressure, or a reduced-pressure gas environment or a pressurized gas environment.

於此,使用電爐燒結的場合中,藉由調整燒結之升溫速度及降溫速度而能夠抑制破裂發生。具體而言,燒結時之電爐之升溫速度可為每小時攝氏300度以下,更可為每小時攝氏180度以下。此外,燒結時之電爐之降溫速度可為每小時攝氏600度以下。其中,亦可調整成階段地變化升溫速度或降溫速度。Here, when electric furnace sintering is used, the occurrence of cracks can be suppressed by adjusting the sintering heating rate and cooling rate. Specifically, the heating rate of the electric furnace during sintering may be 300 ° C or lower per hour, and may be 180 ° C or lower per hour. In addition, the cooling rate of the electric furnace during sintering can be below 600 degrees Celsius per hour. Among them, the heating rate or the cooling rate may be adjusted to be changed stepwise.

圓筒形成型體雖會因燒結工程而收縮,但由於爐內的溫度於全部的材料進入共同開始熱收縮之溫度範圍之前為均勻的,且於升溫的途中維持住溫度以消除爐內之溫度不均,故設置於爐內之整個燒結體可均勻收縮。因此,依各種材料將到達溫度及維持時間設定成適當的條件,則能夠得到穩定的燒結體密度。藉由燒結圓筒軸方向之長度為600 mm以上之圓筒形成型體,而能夠得到圓筒軸方向之長度約為470 mm以上之圓筒形燒結體。Although the cylindrical forming body will shrink due to the sintering process, the temperature in the furnace is uniform before all the materials enter the temperature range where the heat shrinkage starts together, and the temperature is maintained during the heating to eliminate the temperature in the furnace. Uneven, so the entire sintered body set in the furnace can shrink uniformly. Therefore, by setting the arrival temperature and the retention time to appropriate conditions for various materials, a stable sintered body density can be obtained. By sintering a cylinder-shaped body having a length in the direction of the cylindrical axis of 600 mm or more, a cylindrical sintered body having a length in the direction of the cylindrical axis of approximately 470 mm or more can be obtained.

接下來,使用平面磨床、圓筒磨床、車床、切割機、加工中心(machining center)等之機械加工機,對所形成之圓筒形燒結體進行機械加工,以令其成為預期之圓筒形形狀(步驟S307)。於此所進行之機械加工,是將上述圓筒形燒結體加工成適合裝設於濺射裝置之形狀,且加工成具有預期之表面粗糙度。於此,為了得到濺射中不發生電場集中之異常放電等程度之平坦性,圓筒形燒結體之平均表面粗糙度(Ra)可定為0.5 μm以下。藉由以上之工程,而能夠得到高密度且均質性高之圓筒形燒結體。Next, the formed cylindrical sintered body is machined using a machining machine such as a surface grinder, a cylindrical grinder, a lathe, a cutting machine, a machining center, and the like, so that it becomes an intended cylindrical shape. Shape (step S307). The mechanical processing performed here is to process the above-mentioned cylindrical sintered body into a shape suitable for being installed in a sputtering device, and to have a desired surface roughness. Here, in order to obtain flatness to such an extent that abnormal electric field concentration does not occur during sputtering, the average surface roughness (Ra) of the cylindrical sintered body may be set to 0.5 μm or less. Through the above processes, a cylindrical sintered body having high density and high homogeneity can be obtained.

接下來,將經過機械加工之圓筒形燒結體接合至基材(步驟S308)。特別是圓筒形濺射靶件之場合中,經由做為黏著劑之硬焊材,將圓筒形燒結體接合至被稱為背襯管(backing tube)之圓筒形基材。藉由以上之工程,而能夠得到使用上述圓筒形燒結體之圓筒形濺射靶件。Next, the machined cylindrical sintered body is bonded to the substrate (step S308). In particular, in the case of a cylindrical sputtering target, a cylindrical sintered body is bonded to a cylindrical base material called a backing tube via a brazing material as an adhesive. Through the above process, a cylindrical sputtering target using the cylindrical sintered body can be obtained.

如上所述,根據關於實施型態之圓筒形濺射靶件之製造方法,於燒結工程中,藉由對於圓筒形成型體之圓筒內側中空部供給氧氣,而能夠防止燒結中之圓筒形燒結體之變形、破裂。而且,能夠提升燒結後之圓筒形燒結體之密度。再者,能夠降低燒結後之圓筒形燒結體沿圓筒軸方向之相對密度差異。還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞之尺寸。此外,還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞之數量。藉此所能夠提供之圓筒形燒結體及圓筒形濺射靶件,其於固體內及固體間可具有高度均質性。As described above, according to the manufacturing method of the cylindrical sputtering target according to the implementation form, in the sintering process, by supplying oxygen to the hollow portion inside the cylinder of the cylindrical forming body, the circle during sintering can be prevented. Deformation and fracture of cylindrical sintered body. Moreover, the density of the cylindrical sintered body after sintering can be increased. Furthermore, it is possible to reduce the difference in the relative density of the cylindrical sintered body in the direction of the cylindrical axis after sintering. It is also possible to reduce the size of the pores observed on the inner side of the cylinder of the cylindrical sintered body after sintering. In addition, it is possible to reduce the number of holes observed on the inner side surface of the cylinder of the cylindrical sintered body after sintering. The cylindrical sintered body and cylindrical sputtering target that can be provided by this can have high homogeneity in and between solids.

以下將說明變形例1。Modification example 1 will be described below.

使用圖7說明關於本發明之實施型態之變形例1之圓筒形燒結體之燒結方法。A sintering method of the cylindrical sintered body according to the first modification of the embodiment of the present invention will be described with reference to FIG. 7.

圖7繪示關於本發明之實施型態之變形例1之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之俯視圖。於圖7所示之燒結圓筒形成型體111之工程中,配置有十六個氧元素供給口230。此時,各個氧元素供給口230可彼此獨立並能夠控制氧元素供給量,且可分別與用以供給氧元素之管路240直接連接。藉此,能夠依據圓筒形成型體111沿圓筒軸方向之長度、厚度、圓筒內部空間之尺寸及氧元素供給口230相對於圓筒形成型體111之位置,而適當調節自各個氧元素供給口230供給之氧元素量。FIG. 7 is a plan view showing a process of sintering a cylindrically formed body in a method of manufacturing a cylindrical sintered body according to a first modification of the embodiment of the present invention. In the process of forming the sintered cylinder forming body 111 shown in FIG. 7, sixteen oxygen element supply ports 230 are arranged. At this time, the respective oxygen element supply ports 230 can be independent of each other and can control the amount of oxygen element supply, and can be directly connected to the pipelines 240 for supplying oxygen elements, respectively. Thereby, according to the length, thickness of the cylindrical forming body 111 in the direction of the cylindrical axis, the size of the internal space of the cylinder, and the position of the oxygen element supply port 230 with respect to the cylindrical forming body 111, it is possible to appropriately adjust each The amount of oxygen element supplied from the element supply port 230.

於圖7中,八對氧元素供給口230中夾有圓筒形成型體111之壁部且均等配置。換言之,沿著圓筒形成型體111之圓筒內側面及外側面分別配置八個氧元素供給口230。於圖7中,八個氧元素供給口230a位於圓筒形成型體111之圓筒內側,八個氧元素供給口230b位於圓筒形成型體111之圓筒外側,藉此方式配置圓筒形成型體111(以下於不區分氧元素供給口230a及氧元素供給口230b之場合中將稱為氧元素供給口230)。然而並非限定於此,只要能夠將圓筒形成型體111穩定地配置於燒結工作台200上,則並不限制氧元素供給口230之數量、尺寸及配置。此外,氧元素供給口230並非僅配置於圓筒形成型體111之圓筒內側,亦可配置於圓桶外側。換言之,不僅對於圓筒內側面供給氧元素,亦可對於圓筒外側面供給氧元素。In FIG. 7, the wall portions of the cylindrical forming body 111 are sandwiched between eight pairs of oxygen element supply ports 230 and are evenly arranged. In other words, eight oxygen element supply ports 230 are arranged along the inner and outer surfaces of the cylinder of the cylindrical forming body 111, respectively. In FIG. 7, eight oxygen element supply ports 230 a are located inside the cylinder of the cylindrical forming body 111, and eight oxygen element supply ports 230 b are located outside the cylinder of the cylindrical forming body 111. Shape body 111 (hereinafter, when the oxygen element supply port 230a and the oxygen element supply port 230b are not distinguished, it will be referred to as the oxygen element supply port 230). However, it is not limited to this, as long as the cylindrical forming body 111 can be stably arranged on the sintering table 200, the number, size, and arrangement of the oxygen element supply ports 230 are not limited. In addition, the oxygen element supply port 230 is not limited to the inside of the cylinder of the cylindrical forming body 111, and may be located outside the drum. In other words, the oxygen element can be supplied not only to the inner surface of the cylinder but also to the outer surface of the cylinder.

舉例而言,圓筒形成型體111之長度較長之場合中,自位於對流較差之圓筒內側之氧元素供給口230a之氧元素供給量較大,而自位於圓筒外側之氧元素供給口230b之氧元素供給量較小,藉此調整成圓筒內側面及外側面之氧元素濃度最終為均勻。而且,亦可僅自位於圓筒內側之氧元素供給口230a供給氧元素。各個氧元素供給口230a所供給之氧元素量,例如亦可分別為本發明之實施型態中自單一個氧元素供給口230供給氧元素時之供給量之八分之一。此外,各個氧元素供給口230a所供給之氧元素量亦可不均等,而亦可分別相異。亦即,自多個氧元素供給口230a之氧元素供給量之總和,亦可為本發明之實施型態中自單一個氧元素供給口230供給氧元素時之供給量。另外,圓筒軸方向之長度愈長,則自氧元素供給口230a供給之氧元素量之總和亦可愈多。然而並非限定於此,例如於圓筒形成型體111之厚度較厚之場合中,則自氧元素供給口230供給之氧元素量亦可較多。另外例如於圓筒形燒結體之內徑較大或圓筒內部空間較大之場合中,自氧元素供給口230a供給之氧元素量之總和亦可較多。另外例如於圓筒形燒結體之內徑較大或圓筒內部空間較大之場合中,自氧元素供給口230a供給之氧元素量之總和亦可較多。For example, in the case where the length of the cylindrical forming body 111 is long, the oxygen element supply from the oxygen element supply port 230a located inside the cylinder with poor convection is large, and the oxygen element supply from the outside of the cylinder is large. The supply amount of oxygen element in the port 230b is small, thereby adjusting the oxygen element concentration on the inner side surface and the outer side surface of the cylinder to be uniform eventually. Furthermore, the oxygen element may be supplied only from the oxygen element supply port 230a located inside the cylinder. The amount of oxygen element supplied by each oxygen element supply port 230a may be, for example, one-eighth of the supply amount when an oxygen element is supplied from a single oxygen element supply port 230 in the embodiment of the present invention. In addition, the amount of oxygen element supplied by each oxygen element supply port 230a may be uneven or different. That is, the total amount of oxygen element supply from a plurality of oxygen element supply ports 230a may also be the supply amount when an oxygen element is supplied from a single oxygen element supply port 230 in the embodiment of the present invention. In addition, the longer the length in the cylinder axis direction, the more the total amount of oxygen elements supplied from the oxygen element supply port 230a may be. However, it is not limited to this. For example, when the thickness of the cylindrical forming body 111 is thick, the amount of oxygen element supplied from the oxygen element supply port 230 may be large. In addition, for example, in a case where the inner diameter of the cylindrical sintered body is large or the internal space of the cylinder is large, the total amount of oxygen elements supplied from the oxygen element supply port 230a may be large. In addition, for example, in a case where the inner diameter of the cylindrical sintered body is large or the internal space of the cylinder is large, the total amount of oxygen elements supplied from the oxygen element supply port 230a may be large.

自氧元素供給口230供給之氧元素量之上限並未特別限定,但亦可為150 L/min以下。藉由多個氧元素供給口230a供給氧元素,而能夠分散氧元素之供給量,且能夠控制圓筒內側中空部之氣體對流。另外,還能夠抑制因氧元素之冷卻效果而發生之燒結中圓筒形燒結體之變形、破裂或燒結後圓筒形燒結體之密度降低等問題。因此,自多個氧元素供給口230a所供給之氧元素亦可更經由擋板等元件而於圓筒內部空間中擴散。再者,自氧元素供給口230供給之氧元素亦可於管路等循環中預先加熱再進行供給。The upper limit of the amount of the oxygen element supplied from the oxygen element supply port 230 is not particularly limited, but may be 150 L / min or less. By supplying the oxygen element through the plurality of oxygen element supply ports 230a, the supply amount of the oxygen element can be dispersed, and gas convection in the hollow portion inside the cylinder can be controlled. In addition, problems such as deformation, cracking of the cylindrical sintered body during sintering due to the cooling effect of the oxygen element, and reduction in the density of the cylindrical sintered body after sintering can be suppressed. Therefore, the oxygen element supplied from the plurality of oxygen element supply ports 230a can be diffused in the inner space of the cylinder through elements such as a baffle. Furthermore, the oxygen element supplied from the oxygen element supply port 230 may be heated in advance in a cycle such as a pipeline and then supplied.

一般而言,於ITO之燒結中,必須於氧元素氣體環境進行燒結而使得燒結體高密度化。即使於氧元素氣體環境下進行燒結,於燒結長度為600 mm以上之圓筒形成型體111之工程中,因圓筒內側中空部之氣體對流並不充分,而會發生圓筒內側中空部之氧元素不足之情形。若圓筒內側中空部之氧元素不足,可能會發生燒結中之圓筒形燒結體之變形、破裂或燒結後之圓筒形燒結體之密度降低、圓筒形燒結體沿圓筒軸方向之相對密度差異增加、於圓筒形燒結體之圓筒內側面所觀察到之孔洞尺寸或孔洞數量增加等之問題。為了阻止因圓筒內之氧元素不足所造成之影響,於本實施型態中藉由自位於圓筒內側之氧元素供給口230a之氧元素供給量較大,而自位於圓筒外側之氧元素供給口230b之氧元素供給量較小,以調整成圓筒內側面及外側面之氧元素濃度最終為均勻。藉由再加大自位於圓筒內側之氧元素供給口230a之氧元素供給量,而亦可調整成圓筒內側面之氧元素濃度最終大於圓筒外側面之氧元素濃度。再者,亦可調整成僅自位於圓筒內側之氧元素供給口230a供給氧元素,且不自位於圓筒外側之氧元素供給口230b供給氧元素。各個氧元素供給口230可彼此獨立並能夠控制氧元素供給量,且可分別與用以供給氧元素之管路240直接連接。藉由自多個氧元素供給口230a供給氧元素,而能夠更為均勻地對於圓筒內側面供給氧元素。如此之結果,能夠調節燒結中之圓筒形成型體之圓筒內側面及外側面之氧元素濃度,且能夠防止燒結中之圓筒形燒結體之變形、破裂。而且,能夠提升燒結後之圓筒形燒結體之密度。再者,能夠降低燒結後之圓筒形燒結體沿圓筒軸方向之相對密度差異。還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞面積之等效圓直徑。此外,還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞之數量。Generally, in the sintering of ITO, it is necessary to perform sintering in an oxygen element gas environment to increase the density of the sintered body. Even if the sintering is performed in an oxygen gas atmosphere, in the process of sintering a cylindrical forming body 111 having a length of 600 mm or more, gas convection in the hollow portion inside the cylinder is insufficient, and the hollow portion inside the cylinder may occur. Insufficient oxygen. If the oxygen content in the hollow part inside the cylinder is insufficient, the cylindrical sintered body may be deformed, cracked during sintering, or the density of the cylindrical sintered body may be reduced after sintering. Problems such as an increase in the relative density difference, an increase in the size of the pores or an increase in the number of pores observed on the inside surface of the cylinder of the cylindrical sintered body, and the like. In order to prevent the influence caused by the insufficient oxygen element in the cylinder, in this embodiment, the oxygen element supply from the oxygen element supply port 230a located inside the cylinder is large, and the oxygen located outside the cylinder is large. The supply amount of oxygen element to the element supply port 230b is small, so that the oxygen element concentration on the inner side surface and the outer side surface of the cylinder is finally uniform. By further increasing the oxygen element supply amount from the oxygen element supply port 230a located inside the cylinder, the oxygen element concentration on the inner side surface of the cylinder can finally be adjusted to be greater than the oxygen element concentration on the outer side surface of the cylinder. Furthermore, it may be adjusted so that the oxygen element is supplied only from the oxygen element supply port 230a located inside the cylinder, and the oxygen element is not supplied from the oxygen element supply port 230b located outside the cylinder. The respective oxygen element supply ports 230 can be independent of each other and can control the supply amount of the oxygen element, and can be directly connected to the pipelines 240 for supplying the oxygen element, respectively. By supplying the oxygen element from the plurality of oxygen element supply ports 230a, the oxygen element can be more uniformly supplied to the inner side surface of the cylinder. As a result, it is possible to adjust the oxygen element concentration on the inner and outer surfaces of the cylinder of the cylindrical forming body during sintering, and to prevent deformation and cracking of the cylindrical sintered body during sintering. Moreover, the density of the cylindrical sintered body after sintering can be increased. Furthermore, it is possible to reduce the difference in the relative density of the cylindrical sintered body in the direction of the cylindrical axis after sintering. It is also possible to reduce the equivalent circle diameter of the hole area observed on the inner side of the cylinder of the cylindrical sintered body after sintering. In addition, it is possible to reduce the number of holes observed on the inner side surface of the cylinder of the cylindrical sintered body after sintering.

以下將說明變形例2。Modification 2 will be described below.

使用圖8說明關於本發明之實施型態之變形例2之圓筒形燒結體之燒結方法。於本變形例中,由於除了擋板260以外皆與本發明之實施型態相同,故將省略其詳細說明。A sintering method of a cylindrical sintered body according to Modification 2 of the embodiment of the present invention will be described with reference to FIG. 8. In this modification, since the embodiment is the same as the embodiment of the present invention except the baffle 260, detailed descriptions thereof will be omitted.

圖8繪示關於本發明之實施型態之變形例2之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之剖視圖。於圖8所示之燒結圓筒形成型體111之工程中,配置單一個氧元素供給口230。氧元素供給口230可能夠獨立控制氧元素供給量,且可與用以供給氧元素之管路240直接連接。自氧元素供給口230之於氧元素行進方向上配置擋板260。於本變形例中,擋板260具有圍繞氧元素供給口230之帽狀之形狀。擋板260於帽狀之側壁部具有多個開口部280。因此,自氧元素供給口230所供給之氧元素撞擊到擋板260之內側頂棚部,而以擴散之狀態自擋板260之多個開口部280流出。自擋板260之多個開口部280流出之氧元素可自圓筒軸方向之下方逐漸充滿圓筒形成型體內側中空部,而沿圓筒軸方向上升。然而,擋板260之形狀並非限定於此,擋板260之形狀為自氧元素供給口230所供給之氧元素得以擴散於圓筒內部空間中即可。舉例而言,自氧元素之行進方向觀察,擋板260與至少一部分之氧元素供給口230重疊即可。原本自單一個氧元素供給口230供給大量之氧元素時,可能因氧元素之冷卻效果而發生燒結中圓筒形燒結體之變形、破裂或燒結後圓筒形燒結體之密度降低等之問題。藉由變形例2而能夠抑制上述問題。FIG. 8 is a cross-sectional view illustrating a process of sintering a cylindrically formed body in a method of manufacturing a cylindrical sintered body according to a second modification of the embodiment of the present invention. In the process of forming the sintered cylinder forming body 111 shown in FIG. 8, a single oxygen element supply port 230 is arranged. The oxygen element supply port 230 may be capable of independently controlling the supply amount of the oxygen element, and may be directly connected to the pipeline 240 for supplying the oxygen element. A baffle 260 is disposed in the oxygen element traveling direction from the oxygen element supply port 230. In this modification, the baffle 260 has a hat-like shape surrounding the oxygen element supply port 230. The baffle 260 has a plurality of openings 280 in a hat-shaped side wall portion. Therefore, the oxygen element supplied from the oxygen element supply port 230 hits the inner ceiling portion of the baffle plate 260 and flows out from the plurality of opening portions 280 of the baffle plate 260 in a diffused state. The oxygen element flowing out from the plurality of openings 280 of the baffle 260 may gradually fill the hollow portion inside the cylindrical forming body from below the direction of the cylindrical axis, and rise along the direction of the cylindrical axis. However, the shape of the baffle 260 is not limited to this, and the shape of the baffle 260 may be such that the oxygen element supplied from the oxygen element supply port 230 can be diffused into the inner space of the cylinder. For example, viewed from the traveling direction of the oxygen element, the baffle 260 may overlap at least a part of the oxygen element supply port 230. Originally, when a large amount of oxygen was supplied from a single oxygen element supply port 230, the cooling effect of the oxygen element may cause problems such as deformation, cracking of the cylindrical sintered body during sintering, or reduction in the density of the cylindrical sintered body after sintering. . The above-mentioned problem can be suppressed by the second modification.

其中,本發明並非限定於上述之實施型態,於未脫離要旨之範圍中亦能夠進行適當變更。However, the present invention is not limited to the above-mentioned embodiments, and can be appropriately modified without departing from the gist.

以下將說明實施例之圓筒形燒結體之製造。The production of the cylindrical sintered body of the examples will be described below.

以下將說明實施例1。Embodiment 1 will be described below.

於實施例1中,將說明關於製造圓筒形ITO靶材(圓筒形燒結體)之方法。首先,準備BET(Brunauer Emmet and Teller’s equation)比表面積為4.0 m2 /g以上且為6.0 m2 /g以下之4N氧化銦及BET比表面積為4.0 m2 /g以上且為5.7 m2 /g以下之4N氧化錫做為原料粉末。於此,BET比表面積表示藉由BET法而求得之表面積。BET法為氣體吸附法,其中令氮氣、氬氣、氪氣、一氧化碳等氣體分子吸附於固體粒子,且自所吸附之氣體分子之量量測固體粒子之比表面積。於此,量秤90質量%之氧化銦及10質量%之氧化錫做為原料。接下來使用濕式球體研磨器粉碎且混合此些原料粉末。於此使用氧化鋯球體做為粉碎媒介。藉由噴霧乾燥機對混合之漿料進行急速乾燥造粒。In Example 1, a method for manufacturing a cylindrical ITO target (cylindrical sintered body) will be described. First, a 4N indium oxide having a BET (Brunauer Emmet and Teller's equation) specific surface area of 4.0 m 2 / g or more and 6.0 m 2 / g or less and a BET specific surface area of 4.0 m 2 / g or more and 5.7 m 2 / g are prepared. The following 4N tin oxide is used as the raw material powder. Here, the BET specific surface area indicates a surface area obtained by a BET method. The BET method is a gas adsorption method in which gas molecules such as nitrogen, argon, krypton, and carbon monoxide are adsorbed on solid particles, and the specific surface area of the solid particles is measured from the amount of the adsorbed gas molecules. Here, 90% by mass of indium oxide and 10% by mass of tin oxide were used as raw materials. These raw powders were then pulverized and mixed using a wet ball mill. Here, zirconia spheres are used as the pulverizing medium. The mixed slurry was rapidly dried and granulated by a spray dryer.

接下來,利用CIP成型而將上述之造粒工程所得到之混合物成型為圓筒形。利用CIP成型時之壓力為176MPa。Next, the mixture obtained by the granulation process described above was formed into a cylindrical shape by CIP molding. The pressure during molding with CIP was 176 MPa.

上述成型工程所得到實施例1之圓筒形成型體之各個參數如下所述。The parameters of the cylindrical forming body of Example 1 obtained by the above molding process are as follows.

圓筒外徑(直徑)=194.0 mm。Cylinder outer diameter (diameter) = 194.0 mm.

圓筒內徑(直徑)=158.7 mm。Cylinder inner diameter (diameter) = 158.7 mm.

圓筒之厚度=17.65mm。 The thickness of the cylinder = 17.65mm.

圓筒軸方向之長度=600mm。 Length in the direction of the cylinder axis = 600mm.

接下來,使用電爐燒結CIP所得到之圓筒形成型體。燒結條件如下所述。 Next, a cylindrical shaped body obtained by sintering CIP using an electric furnace was used. The sintering conditions are as follows.

升溫速度=攝氏300度/小時。 Heating rate = 300 degrees Celsius / hour.

高溫維持溫度=攝氏1560度。 High temperature maintenance temperature = 1560 degrees Celsius.

高溫維持時間=20小時。 High temperature maintenance time = 20 hours.

燒結時氣體環境=氧元素氣體環境。 Gas environment during sintering = oxygen element gas environment.

燒結時壓力=大氣壓力。 Pressure during sintering = atmospheric pressure.

導入至圓筒內側中空部之氧元素=50L/min。 Oxygen element introduced into the hollow part inside the cylinder = 50L / min.

導入至圓筒外側之氧元素=0L/min。 The oxygen element introduced to the outside of the cylinder = 0 L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=155.2mm。 Cylinder outer diameter (diameter) = 155.2mm.

圓筒內徑(直徑)=127.0mm。 Cylinder inner diameter (diameter) = 127.0mm.

圓筒之厚度=14.1mm。 The thickness of the cylinder is = 14.1mm.

圓筒軸方向之長度=478mm。 Length in the direction of the cylinder axis = 478mm.

燒結體密度=7.134g/cm3Sintered body density = 7.134 g / cm 3 .

燒結體之相對密度=99.68%。 The relative density of the sintered body = 99.68%.

燒結體之塊體(bulk)阻抗值=0.11mΩ.cm。 Bulk impedance of the sintered body = 0.11 mΩ. cm.

以下將說明實施例2。 Embodiment 2 will be described below.

於實施例2中,將說明關於燒結圓筒軸方向之長度大於實 施例1之圓筒形成型體而成之圓筒形燒結體。由於圓筒形成型體之成型工程與實施例1相同,故而省略其說明。 In Example 2, it will be explained that the length in the axial direction of the sintered cylinder is larger than the actual length. A cylindrical sintered body formed of the cylindrical forming body of Example 1. Since the forming process of the cylindrical forming body is the same as that of the first embodiment, the description thereof is omitted.

與實施例1相同之成型工程所得到實施例2之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Example 2 obtained by the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=193.8mm。 Cylinder outer diameter (diameter) = 193.8mm.

圓筒內徑(直徑)=158.2mm。 Inner diameter (diameter) of the cylinder = 158.2mm.

圓筒之厚度=17.8mm。 The thickness of the cylinder = 17.8mm.

圓筒軸方向之長度=1200mm。 Length in the direction of the cylinder axis = 1200mm.

接下來,使用電爐燒結圓筒形成型體。實施例2之燒結條件中,除了導入至圓筒內側中空部之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Example 2 are the same as those of Example 1 except for the oxygen element parameters introduced into the hollow portion on the inner side of the cylinder, so the description is omitted.

導入至圓筒內側中空部之氧元素=100L/min。 Oxygen element introduced into the hollow part inside the cylinder = 100L / min.

導入至圓筒外側之氧元素=0L/min。 The oxygen element introduced to the outside of the cylinder = 0 L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=155.0mm。 Cylinder outer diameter (diameter) = 155.0mm.

圓筒內徑(直徑)=126.6mm。 Cylinder inner diameter (diameter) = 126.6mm.

圓筒之厚度=14.2mm。 The thickness of the cylinder is 14.2mm.

圓筒軸方向之長度=948mm。 Length in the direction of the cylinder axis = 948mm.

燒結體密度=7.132g/cm3Sintered body density = 7.132 g / cm 3 .

燒結體之相對密度=99.65%。 The relative density of the sintered body = 99.65%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

以下將說明實施例3。 Embodiment 3 will be described below.

於實施例3中,將說明關於燒結圓筒軸方向之長度大於實施例1及實施例2之圓筒形成型體而成之圓筒形燒結體。由於圓筒形成型體之成型工程與實施例1相同,故而省略其說明。 In Example 3, a cylindrical sintered body in which the length in the axial direction of the sintered cylinder is larger than the cylindrical forming bodies of Examples 1 and 2 will be described. Since the forming process of the cylindrical forming body is the same as that of the first embodiment, the description thereof is omitted.

與實施例1相同之成型工程所得到實施例3之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Example 3 obtained by the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=194.2mm。 Cylinder outer diameter (diameter) = 194.2mm.

圓筒內徑(直徑)=158.5mm。 Inner diameter (diameter) of the cylinder = 158.5mm.

圓筒之厚度=17.85mm。 The thickness of the cylinder = 17.85mm.

圓筒軸方向之長度=1755mm。 The length in the direction of the cylinder axis = 1755mm.

接下來,使用電爐燒結圓筒形成型體。實施例3之燒結條件中,除了導入至圓筒內側中空部之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Example 3 are the same as those of Example 1 except for the oxygen element parameters introduced into the hollow portion on the inner side of the cylinder, so the description is omitted.

導入至圓筒內側中空部之氧元素=150L/min。 Oxygen element introduced into the hollow part inside the cylinder = 150L / min.

導入至圓筒外側之氧元素=0L/min。 The oxygen element introduced to the outside of the cylinder = 0 L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=155.4mm。 Cylinder outer diameter (diameter) = 155.4mm.

圓筒內徑(直徑)=126.8mm。 Cylinder inner diameter (diameter) = 126.8mm.

圓筒之厚度=14.3mm。 The thickness of the cylinder is 14.3mm.

圓筒軸方向之長度=1386mm。 Length in the direction of the cylinder axis = 1386mm.

燒結體密度=7.130g/cm3Sintered body density = 7.130 g / cm 3 .

燒結體之相對密度=99.62%。 The relative density of the sintered body = 99.62%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

接下來,以下將說明關於相對於上述之實施例1至3所示之圓筒形成型體及圓筒形燒結體之比較例。以下之比較例與實施例相異,比較例中將說明關於以並未將氧元素導入至圓筒形成型體內側中空部之條件燒結而成之圓筒形燒結體。其中於比較例中,不將氧元素導入至圓筒形成型體內側中空部,改於將氧元素導入至圓筒形成型體外側之條件下進行燒結。由於圓筒形成型體之成型工程與實施例1相同,故而省略其說明。 Next, a comparative example with respect to the cylindrical forming body and the cylindrical sintered body shown in Examples 1 to 3 described above will be described below. The following comparative examples are different from the examples. In the comparative examples, a cylindrical sintered body that is sintered under the condition that the oxygen element is not introduced into the hollow portion inside the cylindrical forming body will be described. Among them, in the comparative example, instead of introducing the oxygen element into the hollow portion inside the cylindrical forming body, sintering was performed under the condition that the oxygen element was introduced into the cylindrical forming body outside. Since the forming process of the cylindrical forming body is the same as that of the first embodiment, the description thereof is omitted.

以下將說明比較例1。 Comparative Example 1 will be described below.

與實施例1相同之成型工程所得到比較例1之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Comparative Example 1 obtained by the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=194.9mm。 Cylinder outer diameter (diameter) = 194.9mm.

圓筒內徑(直徑)=159.0mm。 Cylinder inner diameter (diameter) = 159.0mm.

圓筒之厚度=17.95mm。 The thickness of the cylinder = 17.95mm.

圓筒軸方向之長度=480mm。 Length in the direction of the cylinder axis = 480mm.

接下來,使用電爐燒結圓筒形成型體。比較例1之燒結條件中,除了導入至圓筒形成型體之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Comparative Example 1 are the same as those of Example 1 except for the parameters of the oxygen element introduced into the cylindrical forming body, and therefore descriptions thereof are omitted.

導入至圓筒內側中空部之氧元素=0L/min。 The oxygen element introduced into the hollow part inside the cylinder = 0 L / min.

導入至圓筒外側之氧元素=100L/min。 Oxygen element introduced to the outside of the cylinder = 100L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如 下所述。 The parameters of the cylindrical sintered body obtained through the above sintering process are as follows Described below.

圓筒外徑(直徑)=155.9mm。 Cylinder outer diameter (diameter) = 155.9mm.

圓筒內徑(直徑)=127.2mm。 Inner diameter (diameter) of the cylinder = 127.2mm.

圓筒之厚度=14.35mm。 The thickness of the cylinder is 14.35mm.

圓筒軸方向之長度=385mm。 Length in the direction of the cylinder axis = 385mm.

燒結體密度=7.133g/cm3Sintered body density = 7.133 g / cm 3 .

燒結體之相對密度=99.66%。 The relative density of the sintered body = 99.66%.

燒結體之塊體阻抗值=0.11mΩ.cm。 The block impedance value of the sintered body = 0.11mΩ. cm.

以下將說明比較例2。 Comparative Example 2 will be described below.

與實施例1相同之成型工程所得到比較例2之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Comparative Example 2 obtained by the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=193.5mm。 Cylinder outer diameter (diameter) = 193.5mm.

圓筒內徑(直徑)=158.2mm。 Inner diameter (diameter) of the cylinder = 158.2mm.

圓筒之厚度=17.65mm。 The thickness of the cylinder = 17.65mm.

圓筒軸方向之長度=600mm。 Length in the direction of the cylinder axis = 600mm.

接下來,使用電爐燒結圓筒形成型體。比較例2之燒結條件中,除了導入至圓筒形成型體之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Comparative Example 2 are the same as those of Example 1 except for the parameters of the oxygen element introduced into the cylindrical forming body, and their descriptions are omitted.

導入至圓筒內側中空部之氧元素=0L/min。 The oxygen element introduced into the hollow part inside the cylinder = 0 L / min.

導入至圓筒外側之氧元素=100L/min。 Oxygen element introduced to the outside of the cylinder = 100L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=156.7mm。 Cylinder outer diameter (diameter) = 156.7mm.

圓筒內徑(直徑)=128.1mm。 Inner diameter (diameter) of the cylinder = 128.1mm.

圓筒之厚度=14.3mm。 The thickness of the cylinder is 14.3mm.

圓筒軸方向之長度=485mm。 Length in the direction of the cylinder axis = 485mm.

燒結體密度=7.041g/cm3Sintered body density = 7.041 g / cm 3 .

燒結體之相對密度=98.38%。 The relative density of the sintered body = 98.38%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

以下將說明比較例3。 Comparative Example 3 will be described below.

與實施例1相同之成型工程所得到比較例3之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Comparative Example 3 obtained in the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=194.1mm。 Cylinder outer diameter (diameter) = 194.1mm.

圓筒內徑(直徑)=158.2mm。 Inner diameter (diameter) of the cylinder = 158.2mm.

圓筒之厚度=17.95mm。 The thickness of the cylinder = 17.95mm.

圓筒軸方向之長度=1200mm。 Length in the direction of the cylinder axis = 1200mm.

接下來,使用電爐燒結圓筒形成型體。比較例3之燒結條件中,除了導入至圓筒形成型體之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Comparative Example 3 are the same as those of Example 1 except for the parameters of the oxygen element introduced into the cylindrical forming body, and their descriptions are omitted.

導入至圓筒內側中空部之氧元素=0L/min。 The oxygen element introduced into the hollow part inside the cylinder = 0 L / min.

導入至圓筒外側之氧元素=100L/min。 Oxygen element introduced to the outside of the cylinder = 100L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=157.2mm。 Cylinder outer diameter (diameter) = 157.2mm.

圓筒內徑(直徑)=128.1mm。 Inner diameter (diameter) of the cylinder = 128.1mm.

圓筒之厚度=14.55mm。 The thickness of the cylinder = 14.55mm.

圓筒軸方向之長度=957mm。 Length in the direction of the cylinder axis = 957mm.

燒結體密度=7.038g/cm3Sintered body density = 7.038 g / cm 3 .

燒結體之相對密度=98.34%。 The relative density of the sintered body = 98.34%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

其中,比較例3確認到有因燒結而造成之變形。 Among them, Comparative Example 3 confirmed deformation due to sintering.

以下將說明比較例4。 Comparative Example 4 will be described below.

與實施例1相同之成型工程所得到比較例4之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Comparative Example 4 obtained in the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=194.2mm。 Cylinder outer diameter (diameter) = 194.2mm.

圓筒內徑(直徑)=158.4mm。 Cylinder inner diameter (diameter) = 158.4mm.

圓筒之厚度=17.9mm。 The thickness of the cylinder is 17.9mm.

圓筒軸方向之長度=1410mm。 The length in the direction of the cylinder axis = 1410mm.

接下來,使用電爐燒結圓筒形成型體。比較例4之燒結條件中,除了導入至圓筒形成型體之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Comparative Example 4 are the same as those of Example 1 except for the parameters of the oxygen element introduced into the cylindrical forming body, and therefore descriptions thereof are omitted.

導入至圓筒內側中空部之氧元素=0L/min。 The oxygen element introduced into the hollow part inside the cylinder = 0 L / min.

導入至圓筒外側之氧元素=100L/min。 Oxygen element introduced to the outside of the cylinder = 100L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=155.3mm。 Cylinder outer diameter (diameter) = 155.3mm.

圓筒內徑(直徑)=127.8mm。 Cylinder inner diameter (diameter) = 127.8mm.

圓筒之厚度=13.75mm。 The thickness of the cylinder = 13.75mm.

圓筒軸方向之長度=1145mm。 Length in the direction of the cylinder axis = 1145mm.

燒結體密度=7.042g/cm3Sintered body density = 7.042 g / cm 3 .

燒結體之相對密度=98.39%。 The relative density of the sintered body = 98.39%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

以下將說明比較例5。 Comparative Example 5 will be described below.

與實施例1相同之成型工程所得到比較例5之圓筒形成型體之各個參數如下所述。 The parameters of the cylindrical forming body of Comparative Example 5 obtained in the same molding process as in Example 1 are as follows.

圓筒外徑(直徑)=193.6mm。 Cylinder outer diameter (diameter) = 193.6mm.

圓筒內徑(直徑)=158.3mm。 Cylinder inner diameter (diameter) = 158.3mm.

圓筒之厚度=17.65mm。 The thickness of the cylinder = 17.65mm.

圓筒軸方向之長度=1754mm。 Length in the direction of the cylinder axis = 1754mm.

接下來,使用電爐燒結圓筒形成型體。比較例5之燒結條件中,除了導入至圓筒形成型體之氧元素參數以外,其餘皆與實施例1相同,故而省略其說明。 Next, the cylindrical body was sintered using an electric furnace. The sintering conditions of Comparative Example 5 are the same as those of Example 1 except for the parameters of the oxygen element introduced into the cylindrical forming body, and their descriptions are omitted.

導入至圓筒內側中空部之氧元素=0L/min。 The oxygen element introduced into the hollow part inside the cylinder = 0 L / min.

導入至圓筒外側之氧元素=100L/min。 Oxygen element introduced to the outside of the cylinder = 100L / min.

藉由上述燒結工程所得到之圓筒形燒結體之各個參數如下所述。 The parameters of the cylindrical sintered body obtained by the above sintering process are as follows.

圓筒外徑(直徑)=157.8mm。 Cylinder outer diameter (diameter) = 157.8mm.

圓筒內徑(直徑)=128.5mm。 Cylinder inner diameter (diameter) = 128.5mm.

圓筒之厚度=14.65mm。 The thickness of the cylinder = 14.65mm.

圓筒軸方向之長度=1394mm。 Length in the direction of the cylinder axis = 1394mm.

燒結體密度=7.044g/cm3Sintered body density = 7.044 g / cm 3 .

燒結體之相對密度=98.42%。 The relative density of the sintered body = 98.42%.

燒結體之塊體阻抗值=0.12mΩ.cm。 The block impedance of the sintered body = 0.12 mΩ. cm.

以下將說明量測樣品之準備。 The preparation of measurement samples will be explained below.

針對上述實施例1~實施例3及比較例1~比較例5之圓筒形燒結體,準備用以評價密度及塊體阻抗之固體內偏差之量測樣品。如圖9所示,圓筒形燒結體110沿燒結時之圓筒軸方向自向方朝向上方每隔150mm分段,再於各個圓筒軸方向中央部切出幅寬40~50mm之圓筒形量測樣品。自圓筒軸下方依序為110-1(150mm)、110-25(300mm)、110-3(450mm)(後述表格中之名稱)。 For the cylindrical sintered bodies of Examples 1 to 3 and Comparative Examples 1 to 5 described above, measurement samples were prepared for evaluating the internal deviation of the solid and the impedance of the bulk. As shown in FIG. 9, the cylindrical sintered body 110 is segmented every 150 mm from the direction of the cylindrical axis direction upwards during sintering, and then a cylinder with a width of 40 to 50 mm is cut at the central part of each cylindrical axis direction. Shape measurement sample. 110-1 (150mm), 110-25 (300mm), 110-3 (450mm) (the names in the table to be described later) in this order from below the cylindrical shaft.

以下將說明相對密度之評價。 The evaluation of the relative density will be described below.

針對上述實施例1~實施例3及比較例1~比較例5之圓筒形燒結體及各個量測樣品,評價其相對密度。使用阿基米德法量測圓筒形燒結體及各個量測樣品之密度。基於理論密度算出圓筒形燒結體及各個量測樣品之相對密度及相對密度差異。圖10表示於實施例1~實施例3及比較例1~比較例5中,圓筒形燒結體及各個量測樣品之密度、相對密度及圓筒形燒結體內之最大相對密度差異。 The relative density of the cylindrical sintered body and each measurement sample of the above-mentioned Examples 1 to 3 and Comparative Examples 1 to 5 was evaluated. The Archimedes method was used to measure the density of the cylindrical sintered body and each measurement sample. Based on the theoretical density, the relative density and the difference in relative density of the cylindrical sintered body and each measurement sample were calculated. FIG. 10 shows the density, relative density, and maximum relative density difference between the cylindrical sintered body and each measurement sample in Examples 1 to 3 and Comparative Examples 1 to 5.

由圖10之結果可知,相較於燒結時並未將氧元素導入至圓筒形成型體之內側中空部之比較例2~比較例5之圓筒形燒結體,燒結時有將氧元素導入至圓筒形成型體之內側中空部之實施例1~實施例 3之圓筒形燒結體之相對密度較為提升。圓筒軸方向之長度為470mm以下之比較例1中,即使並未將氧元素導入至圓筒形成型體之內側中空部,其相對密度亦有所提升。相較於比較例2~比較例5之各個量測樣品,實施例1~實施例3之各個量測樣品能夠降低其相對密度差異。圓筒軸方向之長度為470mm以下之比較例1中,即使並未將氧元素導入至圓筒形成型體之內側中空部,其相對密度差異亦能有所降低。因此,藉由將氧元素供給於燒結工程中之圓筒形成型體之圓筒內側面,圓筒軸方向之長度為1200mm以上之圓筒形成型體亦能夠防止燒結中之變形、破裂等問題。 As can be seen from the results of FIG. 10, compared with the cylindrical sintered bodies of Comparative Examples 2 to 5 in which the oxygen element was not introduced into the hollow portion inside the cylindrical forming body during sintering, the oxygen element was introduced during sintering. Examples 1 to 1 to the inner hollow portion of the cylindrical forming body The relative density of the cylindrical sintered body of 3 is relatively increased. In Comparative Example 1 in which the length in the direction of the cylinder axis was 470 mm or less, even if the oxygen element was not introduced into the inner hollow portion of the cylinder forming body, the relative density was improved. Compared with the measurement samples of Comparative Examples 2 to 5, each measurement sample of Examples 1 to 3 can reduce the difference in relative density. In Comparative Example 1 in which the length in the direction of the cylinder axis was 470 mm or less, even if the oxygen element was not introduced into the inner hollow portion of the cylindrical forming body, the difference in relative density could be reduced. Therefore, by supplying oxygen element to the inner side surface of the cylinder of the cylindrical forming body in the sintering process, the cylindrical forming body having a length in the direction of the cylindrical axis of 1200 mm or more can also prevent problems such as deformation and cracking during sintering. .

以下將說明最小氧元素供給量之評價。 The evaluation of the minimum oxygen element supply amount will be described below.

根據上述之實施例及比較例中之圓筒形成型體之燒結方法,而求出可得到密度為7.130g/cm3以上之圓筒形燒結體之最小氧元素供給量。具體而言,階段變化燒結時導入至圓筒內側中空部之氧元素量,而得到圓筒軸方向之長度為390、480、950、1200或1400mm之圓筒形燒結體。使用阿基米德法量測各個圓筒形燒結體之密度。密度為7.130g/cm3以上之圓筒形燒結體中,以各個圓筒軸方向之長度做為區別,於燒結時導入氧元素量為最小之數值做為最小氧元素供給量。圖11表示最小氧元素供給量相對於圓筒形燒結體之圓筒軸方向之長度之關係。 According to the sintering method of the cylindrical forming body in the above examples and comparative examples, the minimum supply amount of oxygen element to obtain a cylindrical sintered body having a density of 7.130 g / cm 3 or more was obtained. Specifically, the amount of oxygen element introduced into the hollow portion inside the cylinder during stepwise sintering was changed to obtain a cylindrical sintered body having a length in the direction of the cylinder axis of 390, 480, 950, 1200, or 1400 mm. The density of each cylindrical sintered body was measured using the Archimedes method. For cylindrical sintered bodies with a density of 7.130 g / cm 3 or more, the length in the direction of the axis of each cylinder is used as the difference, and the value of the minimum amount of oxygen element introduced during sintering is used as the minimum oxygen element supply amount. FIG. 11 shows the relationship between the minimum oxygen element supply amount and the length in the cylindrical axis direction of the cylindrical sintered body.

如圖11所示,圓筒形燒結體之圓筒軸方向之長度至390mm時,即使未導入氧元素,亦可得到密度為7.130g/cm3以上之圓筒形燒結體。於形成480mm之圓筒形燒結體之場合中,最小氧元素供給 量為5L/min以上。於形成950mm之圓筒形燒結體之場合中,最小氧元素供給量為20L/min以上。於形成1200mm之圓筒形燒結體之場合中,最小氧元素供給量為30L/min以上。於形成1400mm之圓筒形燒結體之場合中,最小氧元素供給量為35L/min以上。由圖11之結果可知,圓筒軸方向之長度愈長,要得到密度為7.130g/cm3以上之圓筒形燒結體所需要之氧元素量愈為增加。密度為7.130g/cm3以上之圓筒形燒結體之軸方向之長度設為X(mm),自氧元素供給口230供給之最小氧元素供給量設為Y(L/min),其比例關係能夠以下述算式表示。 As shown in FIG. 11, when the length in the cylindrical axis direction of the cylindrical sintered body is 390 mm, a cylindrical sintered body having a density of 7.130 g / cm 3 or more can be obtained even if no oxygen element is introduced. When a cylindrical sintered body of 480 mm is formed, the minimum oxygen element supply amount is 5 L / min or more. When forming a cylindrical sintered body of 950 mm, the minimum oxygen element supply amount is 20 L / min or more. When forming a cylindrical sintered body of 1200 mm, the minimum supply amount of oxygen element is 30 L / min or more. When forming a cylindrical sintered body of 1400 mm, the minimum supply amount of oxygen element is 35 L / min or more. As can be seen from the results in FIG. 11, the longer the length in the direction of the cylinder axis, the more the amount of oxygen element required to obtain a cylindrical sintered body having a density of 7.130 g / cm 3 or more. The length in the axial direction of the cylindrical sintered body having a density of 7.130 g / cm 3 or more is set to X (mm), and the minimum supply amount of oxygen element supplied from the oxygen element supply port 230 is set to Y (L / min), and the ratio is The relationship can be expressed by the following formula.

Y=0.0345X-12.508。 Y = 0.0345X-12.508.

以下將說明塊體阻抗之評價。 The evaluation of the block impedance will be described below.

針對上述實施例1~實施例3及比較例1~比較例5之圓筒形燒結體及各個量測樣品,評價其塊體阻抗。使用四探針法量測圓筒形燒結體及各個量測樣品於圓筒外側面之塊體阻抗值。圖12表示於實施例1~實施例3及比較例1~比較例5中,圓筒形燒結體及各個量測樣品之塊體阻抗值。 For the cylindrical sintered bodies and the respective measurement samples of Examples 1 to 3 and Comparative Examples 1 to 5, the bulk impedances were evaluated. The four-probe method was used to measure the cylindrical sintered body and the block impedance of each measurement sample on the outer side of the cylinder. FIG. 12 shows the impedance values of the cylindrical sintered body and the bulk impedance of each measurement sample in Examples 1 to 3 and Comparative Examples 1 to 5. FIG.

由圖12之結果可知,實施例1~實施例3及比較例1~比較例5之圓筒形燒結體及各個量測樣品中,於圓筒外側面之塊體阻抗值幾乎無變化。由於圓筒外側面有充分供給氧元素,故不論是將氧元素導入至圓筒形成型體之圓筒內側中空部之實施例,還是並未將氧元素導入至圓筒內側中空部之比較例,皆可認為對於圓筒外側面之塊體阻抗值幾乎無影響。As can be seen from the results in FIG. 12, the cylindrical sintered bodies of Examples 1 to 3 and Comparative Examples 1 to 5 and the various measurement samples had almost no change in the impedance value of the bulk on the outer surface of the cylinder. Since the outer surface of the cylinder is sufficiently supplied with oxygen elements, both the embodiment in which the oxygen element is introduced into the hollow portion inside the cylinder and the comparative example in which the oxygen element is not introduced into the hollow portion inside the cylinder are introduced. It can be considered that it has almost no effect on the impedance value of the block on the outer side of the cylinder.

以下將說明電子顯微鏡觀察用樣品之準備。The preparation of the sample for electron microscope observation will be described below.

針對上述實施例1、2及比較例2、3之圓筒形燒結體,準備用以藉由電子顯微鏡進行觀察之樣品。如圖13所示,圓筒形燒結體110沿圓筒軸方向中央部切出幅寬10 mm之圓筒形樣品110-4,自圓筒內側面110-4a及圓筒外側面110-4b切出電子顯微鏡觀察用樣品,且以研磨0.5 mm之狀態下進行鏡面研磨。For the cylindrical sintered bodies of Examples 1 and 2 and Comparative Examples 2 and 3, samples were prepared for observation with an electron microscope. As shown in FIG. 13, a cylindrical sample 110-4 having a width of 10 mm was cut out from the cylindrical sintered body 110 at the center of the cylindrical axis direction, and the cylindrical inner surface 110-4a and the cylindrical outer surface 110-4b were cut out. A sample for observation with an electron microscope was cut out, and mirror-polished with 0.5 mm of polishing.

以下將說明藉由電子顯微鏡所進行之觀察。The observation by an electron microscope will be described below.

針對上述實施例1、2及比較例2、3之圓筒形燒結體,使用電子顯微鏡(SEM)觀察圓筒形燒結體之圓筒內側面及外側面之電子顯微鏡觀察用樣品。於各個樣品中,使用電子顯微鏡(SEM)於1000倍之視野下所觀察之相片,為表示於圖14(圓筒內側)及圖15(圓筒外側)。此外,於各個樣品中,使用電子顯微鏡(SEM)於2000或5000倍之視野下所觀察之相片,為表示於圖16(圓筒內側)及圖17(圓筒外側)。於圖14至圖17中,使用電子顯微鏡(SEM)觀察(a)實施例1、(b)實施例2、(c)比較例2、(d)比較例3之圓筒形燒結體之圓筒內側面及外側面之電子顯微鏡觀察用樣品。With respect to the cylindrical sintered bodies of Examples 1 and 2 and Comparative Examples 2 and 3 described above, electron microscope observation samples of the cylindrical inner and outer surfaces of the cylindrical sintered body were observed using an electron microscope (SEM). In each sample, photographs observed under a 1000-fold field of view using an electron microscope (SEM) are shown in FIG. 14 (inside the cylinder) and FIG. 15 (outside of the cylinder). In addition, in each sample, photographs observed under a field of view of 2000 or 5000 times using an electron microscope (SEM) are shown in FIG. 16 (inside the cylinder) and FIG. 17 (outside of the cylinder). In FIGS. 14 to 17, the circles of the cylindrical sintered body of (a) Example 1, (b) Example 2, (c) Comparative Example 2, and (d) Comparative Example 3 were observed using an electron microscope (SEM). Samples for electron microscope observation of the inside and outside surfaces of the tube.

圖14之(a)及(b)為實施例1及實施例2中之圓筒形燒結體內側面之電子顯微鏡相片。圖15之(a)及(b)為實施例1及實施例2中之圓筒形燒結體外側面之電子顯微鏡相片。圖14之(c)及(d)為比較例2及比較例3中之圓筒形燒結體內側面之電子顯微鏡相片。圖15之(c)及(d)為比較例2及比較例3中之圓筒形燒結體外側面之電子顯微鏡相片。如圖14及圖15所示,於燒結時將氧元素導入圓筒形成型體之圓筒內側中空部之實施例1及實施例2中,圓筒形燒結體內側面(圖14之(a)及(b))及外側面(圖15之(a)及(b))之電子顯微鏡相片並未觀察到有顯著差異。另一方面,燒結時並未將氧元素導入圓筒形成型體之圓筒內側中空部之比較例2及比較例3中,相較於圓筒形燒結體外側面(圖15之(c)及(d)),圓筒形燒結體內側面(圖14之(c)及(d))之電子顯微鏡相片中觀察到有大量之大型孔洞(相片中黑色不規則之型態)。於比較例2及比較例3中之圓筒形燒結體之圓筒內側面觀察到有大量不規則粒形(結晶粒狀)孔洞。比較例2及比較例3中之圓筒形燒結體之圓筒內側面所觀察到之孔洞,主要是在結晶粒邊界觀察到。(A) and (b) of FIG. 14 are electron microscope photographs of the inside surface of the cylindrical sintered body in Examples 1 and 2. 15 (a) and (b) are electron micrographs of the outer surface of the cylindrical sintered body in Examples 1 and 2. FIG. (C) and (d) of FIG. 14 are electron microscope photographs of the inside surface of the cylindrical sintered body in Comparative Examples 2 and 3. (C) and (d) of FIG. 15 are electron microscope photographs of the outer surface of the cylindrical sintered body in Comparative Examples 2 and 3. As shown in FIGS. 14 and 15, in Examples 1 and 2 in which the oxygen element is introduced into the hollow portion inside the cylinder during the sintering, the inside surface of the cylindrical sintered body (FIG. 14 (a)) And (b)) and the electron microscope photographs of the outer surface (Figures 15 (a) and (b)) did not show significant differences. On the other hand, in Comparative Example 2 and Comparative Example 3, in which the oxygen element was not introduced into the hollow portion on the inner side of the cylinder during the sintering, the outer surface of the cylindrical sintered body was compared with that of the outer side (Fig. (D)), a large number of large holes were observed in the electron microscope photograph of the inside of the cylindrical sintered body (Figures 14 (c) and (d)) (black irregular patterns in the photograph). A large number of irregular granular (crystalline granular) holes were observed on the inner side surface of the cylinder of the cylindrical sintered body in Comparative Examples 2 and 3. The pores observed on the inner surface of the cylinder of the cylindrical sintered body in Comparative Examples 2 and 3 were mainly observed at the crystal grain boundaries.

接下來,為了觀察結晶粒子之狀態,特別於比較例中於2000或5000倍之視野下觀察圖14之(c)及(d)並未觀察到有大型孔洞之區域。圖16之(a)及(b)為實施例1及實施例2中之圓筒形燒結體內側面之電子顯微鏡相片。圖17之(a)及(b)為實施例1及實施例2中之圓筒形燒結體外側面之電子顯微鏡相片。圖16之(c)及(d)為比較例2及比較例3中之圓筒形燒結體內側面之電子顯微鏡相片。圖17之(c)及(d)為比較例2及比較例3中之圓筒形燒結體外側面之電子顯微鏡相片。如圖16及圖17所示,於燒結時將氧元素導入圓筒形成型體之圓筒內側中空部之實施例1及實施例2中,圓筒形燒結體內側面(圖16之(a)及(b))及外側面(圖17之(a)及(b))之電子顯微鏡相片並未觀察到有顯著差異,結晶粒子大型成長。燒結時皆並未將氧元素導入圓筒形成型體之圓筒內側中空部,而比較例2於圓筒軸方向之長度小於比較例3,於比較例2中,圓筒形燒結體內側面(圖16之(c))及外側面(圖17之(c))之電子顯微鏡相片並未觀察到有顯著差異,結晶粒子大型成長。另一方面,燒結時皆並未將氧元素導入圓筒形成型體之圓筒內側中空部,而比較例3於圓筒軸方向之長度大於比較例2,於比較例3中,相較於圓筒形燒結體外側面(圖17之(d)),圓筒形燒結體內側面(圖16之(d))之電子顯微鏡相片觀察到有小型成長且為成長初期階段之結晶粒子。於比較例3中,由於圓筒形燒結體內側面之結晶粒子為成長初期階段,故結晶粒子小、不均勻且欠缺平滑性。Next, in order to observe the state of the crystal particles, particularly in the comparative example, the areas where large holes are not observed are observed in (c) and (d) of FIG. 14 at a field of view of 2000 or 5000 times. (A) and (b) of FIG. 16 are electron microscope photographs of the inside surface of the cylindrical sintered body in Examples 1 and 2. 17 (a) and 17 (b) are electron micrographs of the outer surface of the cylindrical sintered body in Examples 1 and 2. FIG. (C) and (d) of FIG. 16 are electron microscope photographs of the inside surfaces of the cylindrical sintered bodies in Comparative Examples 2 and 3. (C) and (d) of FIG. 17 are electron microscope photographs of the outer surface of the cylindrical sintered body in Comparative Examples 2 and 3. As shown in FIGS. 16 and 17, in Examples 1 and 2 in which the oxygen element is introduced into the hollow portion on the inner side of the cylinder during the sintering, the inside surface of the cylindrical sintered body (FIG. And (b)) and the electron microscope photographs of the outer surface (Fig. 17 (a) and (b)) did not observe any significant difference, and large-scale growth of crystal particles. During the sintering, no oxygen element was introduced into the hollow portion of the inner side of the cylinder of the cylindrical forming body, and the length of the cylindrical axis of Comparative Example 2 was shorter than that of Comparative Example 3. In Comparative Example 2, the side of the cylindrical sintered body No significant difference was observed in the electron microscope photographs of Fig. 16 (c)) and the outer surface (Fig. 17 (c)), and large-scale growth of crystal particles was observed. On the other hand, during the sintering, no oxygen element was introduced into the hollow portion of the inner side of the cylinder of the cylindrical forming body, and the length of the cylindrical axis of Comparative Example 3 was larger than that of Comparative Example 2. In Comparative Example 3, compared with Electron microscopy images of the outer surface of the cylindrical sintered body (Fig. 17 (d)) and the inner surface of the cylindrical sintered body (Fig. 16 (d)) showed small-sized crystal particles that were in the initial stage of growth. In Comparative Example 3, since the crystal particles on the inner surface of the cylindrical sintered body were in the initial stage of growth, the crystal particles were small, uneven, and lacking in smoothness.

於實施例1及實施例2之圓筒形燒結體之圓筒內側面及外側面觀察到有小型不規則粒形(氣泡狀)之孔洞(例如圖17之(b)之左上之孔洞)。於比較例2及比較例3之圓筒形燒結體之圓筒外側面亦觀察到有同樣小型不規則粒形(氣泡狀)之孔洞。無論是觀察結晶粒邊界還是結晶內,皆可觀察到於實施例1及實施例2之圓筒形燒結體之圓筒內側面以及於比較例2及比較例3之圓筒形燒結體之及外側面所觀察到之孔洞。Small irregular grain-shaped (bubble-like) holes were observed on the inner and outer surfaces of the cylinders of the cylindrical sintered bodies of Examples 1 and 2 (for example, the upper-left hole in FIG. 17 (b)). Also in the cylindrical outer surfaces of the cylindrical sintered bodies of Comparative Examples 2 and 3, the same small irregular grain shape (bubble-like) holes were observed. Regardless of whether the boundaries of the crystal grains or the inside of the crystals are observed, the inner sides of the cylinders of the cylindrical sintered bodies of Examples 1 and 2 and the cylindrical sintered bodies of Comparative Examples 2 and 3 can be observed. Holes observed from the outside.

以下將說明圓筒形燒結體內側面之孔洞之評價。Evaluation of the pores on the side of the cylindrical sintered body will be described below.

於實施例1~實施例3及比較例1~比較例5之圓筒形燒結體中,使用上述方法以電子顯微鏡(SEM)觀察圓筒形燒結體於圓筒軸方向中央部之圓筒內側面及外側面之組織,且量測孔洞之數量及孔洞之面積之等效圓直徑。各個樣品為於圓筒形樣品110-4之圓筒內側面110-4a沿圓周方向所切出之五個電子顯微鏡觀察用樣品。自各個電子顯微鏡觀察用樣品觀察980 μm╳1200 μm之視野,以算出孔洞之數量及孔洞之面積之等效圓直徑之平均值。以下述算式算出圓筒形燒結體之孔洞之面積S之等效圓直徑L。In the cylindrical sintered bodies of Examples 1 to 3 and Comparative Examples 1 to 5, the electron microscope (SEM) was used to observe the cylindrical sintered body in the cylinder at the central portion in the direction of the cylindrical axis using the method described above. The structure of the side and the outer side, and measure the number of holes and the equivalent circle diameter of the area of the holes. Each of the samples was five electron microscope observation samples cut out from the inner side surface 110-4a of the cylindrical sample 110-4 along the circumferential direction. A field of view of 980 μm to 1200 μm was observed from each electron microscope observation sample to calculate the average number of holes and the equivalent circle diameter of the area of the holes. The equivalent circle diameter L of the area S of the hole in the cylindrical sintered body was calculated by the following formula.

算式1:Equation 1: .

圖18表示於實施例1~實施例3及比較例1~比較例5之圓筒形燒結體之圓筒內側面中,孔洞之數量及孔洞之面積之等效圓直徑之平均值。FIG. 18 shows the average value of the equivalent circle diameter of the number of holes and the area of the holes on the inner side surface of the cylinder of the cylindrical sintered body of Examples 1 to 3 and Comparative Examples 1 to 5. FIG.

由圖18之結果可知,相較於燒結時並未將氧元素導入至圓筒形成型體之圓筒內側中空部之比較例2~比較例5之圓筒形燒結體,燒結時有將氧元素導入至圓筒形成型體之圓筒內側中空部之實施例1~實施例3之圓筒形燒結體於圓筒內側面之孔洞數量較少。圓筒軸方向之長度為470 mm以下之比較例1中,即使並未將氧元素導入至圓筒形成型體之內側中空部,其於圓筒內側面之孔洞數量亦較少。實施例1~3之圓筒形燒結體之圓筒內側面中,孔洞之面積之等效圓直徑之平均值為1 μm以下。另一方面,比較例2~5之圓筒形燒結體之圓筒內側面中,孔洞之面積之等效圓直徑之平均值為4 μm以上。圓筒軸方向之長度為470 mm以下之比較例1中,即使並未將氧元素導入至圓筒形成型體之內側中空部,於圓筒內側面之孔洞之面積之等效圓直徑之平均值亦可為1 μm以下。另外如圖18所示,實施例1~3及比較例1~5之圓筒形燒結體之圓筒外側面所觀察到之孔洞之數量皆可為4.25╳10-5 個/μm2 以下,孔洞之面積之等效圓直徑之平均值皆可為1 μm以下。From the results shown in FIG. 18, compared with the cylindrical sintered bodies of Comparative Examples 2 to 5 in which the oxygen element was not introduced into the hollow portion inside the cylinder of the cylindrical forming body during sintering, the The cylindrical sintered bodies of Examples 1 to 3 in which the elements were introduced into the hollow portion on the inner side of the cylinder of the cylindrical forming body had a small number of holes on the inner side surface of the cylinder. In Comparative Example 1 in which the length in the direction of the cylinder axis was 470 mm or less, even if the oxygen element was not introduced into the inner hollow portion of the cylinder forming body, the number of holes in the inner side surface of the cylinder was small. In the cylindrical inner surface of the cylindrical sintered body of Examples 1 to 3, the average value of the equivalent circle diameter of the area of the holes was 1 μm or less. On the other hand, in the cylindrical inner surface of the cylindrical sintered bodies of Comparative Examples 2 to 5, the average value of the equivalent circle diameter of the area of the holes was 4 μm or more. In Comparative Example 1 in which the length in the direction of the cylinder axis is 470 mm or less, the average equivalent circle diameter of the area of the holes on the inner side surface of the cylinder is averaged even if oxygen is not introduced into the inner hollow portion of the cylinder forming body. The value may be 1 μm or less. In addition, as shown in FIG. 18, the number of holes observed on the outer surface of the cylinder of the cylindrical sintered bodies of Examples 1 to 3 and Comparative Examples 1 to 5 may be 4.254.210 -5 holes / μm 2 or less. The average value of the equivalent circle diameter of the hole area can be 1 μm or less.

於實施例1~3中雖表示ITO之結果,但對於由IZO、IGZO、AZO之各種組成分所構成之圓筒軸方向之長度為600 mm以上之圓筒形成型體,亦可同樣使用本發明之製造方法進行燒結。其中,於本發明之範圍內能夠隨各個組成分而適當變更製造條件。如此之結果,能夠防止燒結中之圓筒形燒結體之變形、破裂。而且,能夠提升燒結後之圓筒形燒結體之密度。再者,能夠降低燒結後之圓筒形燒結體沿圓筒軸方向之相對密度差異。還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞面積之等效圓直徑。此外,還能夠縮減於燒結後之圓筒形燒結體之圓筒內側面所觀察到之孔洞之數量。Although the results of ITO are shown in Examples 1 to 3, the same can be used for a cylindrically formed body having a length of 600 mm or more in the direction of the cylinder axis composed of various components of IZO, IGZO, and AZO The manufacturing method of the invention performs sintering. However, the manufacturing conditions can be appropriately changed in accordance with the respective components within the scope of the present invention. As a result, deformation and cracking of the cylindrical sintered body during sintering can be prevented. Moreover, the density of the cylindrical sintered body after sintering can be increased. Furthermore, it is possible to reduce the difference in the relative density of the cylindrical sintered body in the direction of the cylindrical axis after sintering. It is also possible to reduce the equivalent circle diameter of the hole area observed on the inner side of the cylinder of the cylindrical sintered body after sintering. In addition, it is possible to reduce the number of holes observed on the inner side surface of the cylinder of the cylindrical sintered body after sintering.

然而,本發明並非限定於上述之實施型態,於未脫離要旨之範圍中亦能夠進行適當變更。However, the present invention is not limited to the above-mentioned embodiments, and can be appropriately changed without departing from the gist.

100‧‧‧圓筒形濺射靶件
110、110a、110b‧‧‧圓筒形燒結體
110-1、110-2、110-3‧‧‧量測樣品
110-4‧‧‧圓筒形樣品
110-4a‧‧‧圓筒內側面
110-4b‧‧‧圓筒外側面
111‧‧‧圓筒形成型體
120‧‧‧空間
130‧‧‧圓筒基材
140‧‧‧硬焊材
150‧‧‧底面
200‧‧‧燒結工作台
230、230a、230b‧‧‧氧元素供給口
240‧‧‧管路
260‧‧‧擋板
280‧‧‧開口部
300‧‧‧腔室
100‧‧‧ cylindrical sputtering target
110, 110a, 110b‧‧‧ cylindrical sintered body
110-1, 110-2, 110-3‧‧‧ Measured samples
110-4‧‧‧ cylindrical sample
110-4a‧‧‧Cylinder inner side
110-4b‧‧‧Cylinder outer side
111‧‧‧ cylindrical forming body
120‧‧‧ space
130‧‧‧ cylindrical substrate
140‧‧‧ brazing material
150‧‧‧ underside
200‧‧‧Sintering table
230, 230a, 230b‧‧‧oxygen supply port
240‧‧‧ pipeline
260‧‧‧ Bezel
280‧‧‧ opening
300‧‧‧ chamber

圖1繪示關於本發明之一實施型態之圓筒形濺射靶件所包含之圓筒形燒結體之一範例之立體圖。 圖2繪示關於本發明之一實施型態之組裝後之圓筒形濺射靶件之構成之一範例之剖視圖。 圖3繪示關於本發明之一實施型態之圓筒形燒結體之製造方法之流程圖。 圖4繪示關於本發明之一實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之立體圖。 圖5繪示關於本發明之一實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之剖視圖。 圖6繪示關於本發明之一實施型態之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之俯視圖。FIG. 1 is a perspective view showing an example of a cylindrical sintered body included in a cylindrical sputtering target according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing an example of the structure of a cylindrical sputtering target after assembly according to an embodiment of the present invention. FIG. 3 shows a flowchart of a method for manufacturing a cylindrical sintered body according to an embodiment of the present invention. FIG. 4 is a perspective view illustrating a process of sintering a cylindrically formed body in a method for manufacturing a cylindrically sintered body according to an embodiment of the present invention. FIG. 5 is a cross-sectional view showing a process of sintering a cylinder-forming body in a method for manufacturing a cylindrical sintered body according to an embodiment of the present invention. FIG. 6 is a plan view of a process for sintering a cylindrically formed body in a method for manufacturing a cylindrically sintered body according to an embodiment of the present invention.

圖7繪示關於本發明之一實施型態之變形例1之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之俯視圖。 FIG. 7 is a plan view showing a process for sintering a cylindrically formed body in a method for manufacturing a cylindrical sintered body according to a first modification of the embodiment of the present invention.

圖8繪示關於本發明之一實施型態之變形例2之圓筒形燒結體之製造方法中燒結圓筒形成型體之工程之剖視圖。 FIG. 8 is a cross-sectional view illustrating a process of sintering a cylinder-forming body in a method for manufacturing a cylindrical sintered body according to a second modification of an embodiment of the present invention.

圖9繪示關於本發明之實施例及比較例之圓筒形燒結體中,沿圓筒軸方向擷取量測樣品之擷取位置之示意圖。 FIG. 9 is a schematic diagram showing the positions where the measurement samples are taken along the cylindrical axis direction in the cylindrical sintered body according to the embodiment and the comparative example of the present invention.

圖10為表示關於本發明之實施例及比較例之圓筒形燒結體之密度、固體內密度差異、相對密度及固體內之最大相對密度差異之表格。 FIG. 10 is a table showing the density, the density difference in the solid, the relative density, and the maximum relative density difference in the solid of the cylindrical sintered body according to the examples and comparative examples of the present invention.

圖11繪示關於本發明之實施例及比較例之圓筒形燒結體之長度及最小氧元素供給量之關係之示意圖。 FIG. 11 is a schematic diagram showing the relationship between the length of the cylindrical sintered body and the minimum oxygen element supply amount in the examples and comparative examples of the present invention.

圖12為表示關於本發明之實施例及比較例之圓筒形燒結體之塊體阻抗及固體內塊體阻抗值差異之表格。 FIG. 12 is a table showing the difference between the bulk impedance and the solid bulk impedance of the cylindrical sintered body in the examples and comparative examples of the present invention.

圖13繪示關於本發明之實施例及比較例之圓筒形燒結體中,沿圓筒內側面及外側面擷取量測樣品之擷取位置之示意圖。 FIG. 13 is a schematic diagram showing the positions where the measurement samples are taken along the inner and outer sides of the cylinder in the cylindrical sintered body according to the embodiment and the comparative example of the present invention.

圖14為關於本發明之實施例及比較例之圓筒形燒結體之圓筒內側面之電子顯微鏡(SEM,1000倍)之相片。 FIG. 14 is a photograph of an electron microscope (SEM, 1000 times) of a cylindrical inner surface of a cylindrical sintered body according to examples and comparative examples of the present invention.

圖15為關於本發明之實施例及比較例之圓筒形燒結體之圓筒外側面之電子顯微鏡(SEM,1000倍)之相片。 FIG. 15 is a photograph of an electron microscope (SEM, 1000 times) of a cylindrical outer surface of a cylindrical sintered body according to the examples and comparative examples of the present invention.

圖16為關於本發明之實施例及比較例之圓筒形燒結體之圓筒內側面之電子顯微鏡(SEM,5000倍或2000倍)之相片。 FIG. 16 is a photograph of an electron microscope (SEM, 5000 × or 2000 ×) of a cylindrical inner surface of a cylindrical sintered body according to the examples and comparative examples of the present invention.

圖17為關於本發明之實施例及比較例之圓筒形燒結體之圓筒外側面之電子顯微鏡(SEM,5000倍)之相片。 圖18為表示本發明之實施例及比較例之圓筒形燒結體之圓筒內側面之孔洞之面積之等效圓直徑及數量之平均值之表格。FIG. 17 is a photograph of an electron microscope (SEM, 5000 times) of a cylindrical outer surface of a cylindrical sintered body according to the examples and comparative examples of the present invention. FIG. 18 is a table showing the average values of the equivalent circle diameters and the numbers of the areas of the holes on the inner surface of the cylinder of the cylindrical sintered body according to the examples and comparative examples of the present invention.

Claims (11)

一種圓筒形燒結體之製造方法,包括:於一工作台上配置一圓筒形成型體,該圓筒形成型體於一圓筒軸方向之長度為600mm以上,該工作台設置有一氧元素供給口,該氧元素供給口連接於用以提供一氧元素之一管路;以及自該氧元素供給口沿該圓筒軸方向供給該氧元素且進行燒結,該氧元素供給口小於設置於該圓筒形成型體之圓筒內側之圓筒內周。A method for manufacturing a cylindrical sintered body, comprising: arranging a cylindrical forming body on a workbench, the length of the cylindrical forming body in a direction of a cylindrical axis is 600 mm or more, and the workbench is provided with an oxygen element supply port The oxygen element supply port is connected to a pipeline for providing an oxygen element; and the oxygen element is supplied from the oxygen element supply port in the direction of the cylinder axis and sintered, and the oxygen element supply port is smaller than the circle provided in the circle. The inner circumference of the cylinder inside the cylinder of the cylinder forming body. 如請求項1所述之圓筒形燒結體之製造方法,其中該工作台配置於一腔室中,用以提供該氧元素之該管路為自該腔室之外連接至該氧元素供給口。The method for manufacturing a cylindrical sintered body according to claim 1, wherein the table is arranged in a chamber, and the pipeline for supplying the oxygen element is connected to the oxygen element supply from outside the chamber mouth. 如請求項2所述之圓筒形燒結體之製造方法,其中為朝向該圓筒形成型體之圓筒內側之中空部供給該氧元素且進行燒結。The method for producing a cylindrical sintered body according to claim 2, wherein the oxygen element is supplied to a hollow portion inside the cylinder of the cylindrical forming body and sintered. 如請求項3所述之圓筒形燒結體之製造方法,其中為自該圓筒形成型體之該圓筒軸方向之下方朝向上方供給該氧元素且進行燒結。The method for manufacturing a cylindrical sintered body according to claim 3, wherein the oxygen element is supplied upward from below the cylinder axis direction of the cylindrical forming body and sintered. 一種濺射靶件之製造方法,包括以如請求項1至4之任一項所述之圓筒形燒結體之製造方法製造該圓筒形燒結體,且將該圓筒形燒結體裝設於一基材。A manufacturing method of a sputtering target, comprising manufacturing the cylindrical sintered body by the manufacturing method of the cylindrical sintered body according to any one of claims 1 to 4, and installing the cylindrical sintered body On a substrate. 一種以請求項1至4中任一項之圓筒形燒結體製造方法所製造之圓筒形燒結體,為沿一圓筒軸方向之長度為470mm以上之圓筒形燒結體,且沿該圓筒軸方向之相對密度差異為0.1%以內。A cylindrical sintered body manufactured by the method for manufacturing a cylindrical sintered body according to any one of claims 1 to 4, is a cylindrical sintered body having a length of 470 mm or more along a cylindrical axis direction, and is along the circle The relative density difference in the cylinder axis direction is within 0.1%. 一種以請求項1至4中任一項之圓筒形燒結體製造方法所製造之圓筒形燒結體,為沿一圓筒軸方向之長度為470mm以上之圓筒形燒結體,且於一圓筒內側面所觀察到之孔洞之面積之等效圓直徑為平均1μm以下。A cylindrical sintered body manufactured by the method for manufacturing a cylindrical sintered body according to any one of claims 1 to 4, is a cylindrical sintered body having a length of 470 mm or more along a cylindrical axis direction, and The equivalent circle diameter of the area of the pores observed on the inner surface is 1 μm or less on average. 如請求項7所述之圓筒形燒結體,其中於該圓筒內側面所觀察到之孔洞為於該圓筒軸方向之中央部之獨立的至少五個位置之視野各為1.176mm2所觀察到之孔洞。The cylindrical sintered body according to claim 7, wherein the holes observed on the inner side surface of the cylinder are independent at least five positions in the central portion in the direction of the axis of the cylinder, and each has a field of view of 1.176 mm 2 Observed holes. 一種以請求項1至4中任一項之圓筒形燒結體製造方法所製造之圓筒形燒結體,為沿一圓筒軸方向之長度為470mm以上之圓筒形燒結體,且於一圓筒內側面所觀察到之孔洞之數量為平均4.25×10-5個/μm2以下。A cylindrical sintered body manufactured by the method for manufacturing a cylindrical sintered body according to any one of claims 1 to 4, is a cylindrical sintered body having a length of 470 mm or more along a cylindrical axis direction, and The number of holes observed on the inner surface is 4.25 × 10 -5 holes / μm 2 or less on average. 如請求項9所述之圓筒形燒結體,其中於該圓筒內側面所觀察到之孔洞為於該圓筒軸方向之中央部之獨立的至少五個位置之視野各為1.176mm2所觀察到之孔洞。The cylindrical sintered body according to claim 9, wherein the holes observed on the inner side surface of the cylinder are at least five positions each having a field of view of 1.176 mm 2 at the center of the central portion in the direction of the axis of the cylinder. Observed holes. 一種濺射靶件,包括如請求項6至10之任一項所述之圓筒形燒結體,以及配置於圓筒內側中空部之一基材。A sputtering target includes the cylindrical sintered body according to any one of claims 6 to 10, and a substrate disposed in a hollow portion inside the cylinder.
TW106106359A 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof TWI635194B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016064132 2016-03-28
JP2016-064132 2016-03-28
JP2016214323A JP6397869B2 (en) 2016-03-28 2016-11-01 Cylindrical sputtering target and manufacturing method thereof
JP2016-214323 2016-11-01

Publications (2)

Publication Number Publication Date
TW201734240A TW201734240A (en) 2017-10-01
TWI635194B true TWI635194B (en) 2018-09-11

Family

ID=60004925

Family Applications (4)

Application Number Title Priority Date Filing Date
TW106106359A TWI635194B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof
TW108132861A TWI698542B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and its manufacturing method
TW109119026A TWI704243B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof
TW107109686A TWI699444B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW108132861A TWI698542B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and its manufacturing method
TW109119026A TWI704243B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof
TW107109686A TWI699444B (en) 2016-03-28 2017-02-24 Cylindrical sputtering target and manufacturing method thereof

Country Status (3)

Country Link
JP (3) JP6397869B2 (en)
KR (1) KR102001363B1 (en)
TW (4) TWI635194B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523510B1 (en) * 2018-03-30 2019-06-05 Jx金属株式会社 Sputtering target
BE1028482B1 (en) 2020-07-14 2022-02-14 Soleras Advanced Coatings Bv Manufacture and refill of sputtering targets
BE1028481B1 (en) 2020-07-14 2022-02-14 Soleras Advanced Coatings Bv High Density Sputtering Target

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144393A (en) * 1998-10-30 2000-05-26 Dowa Mining Co Ltd Ito sputtering target and its production
US20060151321A1 (en) * 2004-03-05 2006-07-13 Tosoh Corporation Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body
WO2013108715A1 (en) * 2012-01-18 2013-07-25 三井金属鉱業株式会社 Ceramic cylindrical sputtering target and method for producing same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776672B2 (en) * 1986-08-26 1995-08-16 川崎重工業株式会社 Dispersion plate nozzle for fluidized bed furnace
JPH08144056A (en) * 1994-11-22 1996-06-04 Mitsubishi Materials Corp Production of sputtering target material for forming thin ito film having high strength
JP2005069668A (en) * 2003-08-01 2005-03-17 Asahi Glass Co Ltd Baking container for silicon nitride-based ceramic
JP5299415B2 (en) * 2010-12-13 2013-09-25 住友金属鉱山株式会社 Oxide sintered body for cylindrical sputtering target and method for producing the same
WO2014021334A1 (en) * 2012-07-30 2014-02-06 東ソー株式会社 Sintered oxide body and sputtering target
JP6186649B2 (en) * 2013-07-09 2017-08-30 株式会社大一商会 Game machine
JP5799154B2 (en) * 2013-12-13 2015-10-21 Jx日鉱日石金属株式会社 Sputtering target and manufacturing method thereof
JP5887391B1 (en) * 2014-08-22 2016-03-16 三井金属鉱業株式会社 Method for producing target material for sputtering target and claw member
JP6464776B2 (en) * 2014-10-29 2019-02-06 住友金属鉱山株式会社 Cylindrical ceramic sintered body and manufacturing method thereof
JP2016117950A (en) 2014-12-22 2016-06-30 住友化学株式会社 Production method of cylindrical target material, and cylindrical target material
JP5887625B1 (en) * 2015-03-27 2016-03-16 Jx金属株式会社 Cylindrical sputtering target, cylindrical sintered body, cylindrical molded body, and manufacturing method thereof
JP6532287B2 (en) * 2015-05-14 2019-06-19 キヤノン株式会社 Medical diagnostic support apparatus, information processing method and program
JP2016014191A (en) * 2015-07-21 2016-01-28 三井金属鉱業株式会社 Ceramic cylindrical type sputtering target material, and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144393A (en) * 1998-10-30 2000-05-26 Dowa Mining Co Ltd Ito sputtering target and its production
US20060151321A1 (en) * 2004-03-05 2006-07-13 Tosoh Corporation Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body
WO2013108715A1 (en) * 2012-01-18 2013-07-25 三井金属鉱業株式会社 Ceramic cylindrical sputtering target and method for producing same

Also Published As

Publication number Publication date
JP7244989B2 (en) 2023-03-23
KR102001363B1 (en) 2019-07-17
TWI699444B (en) 2020-07-21
JP6967372B2 (en) 2021-11-17
TWI698542B (en) 2020-07-11
KR20190071656A (en) 2019-06-24
JP6397869B2 (en) 2018-09-26
TW201734240A (en) 2017-10-01
TW201819660A (en) 2018-06-01
TW202014543A (en) 2020-04-16
JP2017197425A (en) 2017-11-02
JP2018009251A (en) 2018-01-18
JP2017178784A (en) 2017-10-05
TW202035740A (en) 2020-10-01
TWI704243B (en) 2020-09-11

Similar Documents

Publication Publication Date Title
KR102493208B1 (en) Cylindrical sputtering target, cylindrical compact, manufacturing method of cylindrical sputtering target, manufacturing method of cylindrical sintered compact and manufacturing method of cylindrical compact
TWI635194B (en) Cylindrical sputtering target and manufacturing method thereof
KR102524402B1 (en) Cylindrical sputtering target and manufacturing method of cylindrical sputtering target
TWI704245B (en) Sputtering target and method of manufacturing the same
TWI645060B (en) Cylindrical ceramic sputtering target and cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets by a backing tube
JP5969146B1 (en) Manufacturing method of cylindrical sputtering target and manufacturing method of cylindrical molded body
TWI703228B (en) Sputtering target and method of manufacturing the same
JP4000813B2 (en) Sputtering target
JP6297620B2 (en) Sputtering target and manufacturing method thereof
JP4843883B2 (en) Sputtering target
JP2017150089A (en) Sputtering target and production method thereof