CN108728808A - A kind of rectangle magnetic control sputtering cathode of high target utilization ratio - Google Patents
A kind of rectangle magnetic control sputtering cathode of high target utilization ratio Download PDFInfo
- Publication number
- CN108728808A CN108728808A CN201710322187.0A CN201710322187A CN108728808A CN 108728808 A CN108728808 A CN 108728808A CN 201710322187 A CN201710322187 A CN 201710322187A CN 108728808 A CN108728808 A CN 108728808A
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- China
- Prior art keywords
- magnet steel
- magnetic
- control sputtering
- target
- utilization ratio
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of rectangle magnetic control sputtering cathodes of high target utilization ratio, including magnet steel and yoke, one cathode includes seven magnet steel, one yoke is connected with seven magnet steel by magnetic force, the mutual magnetic circuit of adjacent twice magnet steel is closed, all magnet steel are using middle magnet steel as the symmetrical distribution of symmetry axis, the setting of the present invention, due to magnet steel road number increase and the magnetic structure of special designing, magnetic field can be made to be changed into U-shaped from traditional V-shape, greater area of etching can be carried out to target surface, to improve the utilization rate of target, it is promoted from current 20% to 40%, effectively save material, simultaneously, because etched surface is more flat, it can effectively improve the uniformity of film layer, obtain better coating effects；The extension of single target usage time can replace target to avoid frequent, reduce the number for opening vacuum chamber, can both ensure the continuity of production, improve working efficiency, can also improve the cleanliness factor of product.
Description
Technical field
The present invention relates to a kind of rectangle magnetic control sputtering cathodes, and in particular to a kind of rectangle magnetron sputtering of high target utilization ratio
Cathode.
Background technology
Plated film is that very thin film is plated on surface, has the function of wear-resisting, lubrication, conduction, optics, decoration etc..With
It is higher and higher to the pursuit of product people, the surface of more and more articles all can plated film.The most common way of plated film is exactly
By coating machine plated film, and using it is more be exactly to sputter class plated film, can simply be interpreted as utilizing ion or superlaser
Target is bombarded, and surface component is made to be sputtered out with atomic group or ionic species, substrate surface is eventually deposited at, eventually forms
Film.
At present its work is limited to using the magnetic control sputtering cathode of typically three magnet steel of sputtering class plated film in plated film industry
Make principle, target utilization is very low, probably 20%, results in a large amount of waste of material in this way；Meanwhile target utilization is low
It also results in equipment and needs frequent replacement target, largely effect on production efficiency.
Invention content
The present invention provides a kind of rectangle magnetic control sputtering cathode of high target utilization ratio, solves the magnetic of existing three magnet steel
The low problem of sputter cathode target utilization rate is controlled, to save a large amount of Master Cost；Meanwhile target utilization is low can also lead
Equipment is caused to need frequent the problem of replacing target, largely effecting on production efficiency.
In order to solve the above technical problem, the present invention provides the following technical solutions：
A kind of rectangle magnetic control sputtering cathode of high target utilization ratio of the present invention, including magnet steel and yoke, a cathode include seven
Magnet steel, a yoke are connected with seven magnet steel by magnetic force, and the mutual magnetic circuit of adjacent twice magnet steel is closed, all magnetic
Steel is using middle magnet steel as the symmetrical distribution of symmetry axis, and the magnetic field of U-shaped is collectively formed in all magnet steel.
As a preferred technical solution of the present invention, the distribution of seven magnet steel non-equidistant.
As a preferred technical solution of the present invention, the non-equal height of seven magnet steel.
As a preferred technical solution of the present invention, the non-equal in width of seven magnet steel.
As a preferred technical solution of the present invention, contain several magnet steel in per pass magnet steel.
The advantageous effect that is reached of the present invention is：Due to magnet steel road number increase and the magnetic structure of special designing, meeting
So that magnetic field is changed into U-shaped from traditional V-shape, greater area of etching can be carried out to target surface, to improve target
Utilization rate, promoted from current 20% to 40%, effectively save material, meanwhile, can be effective because etched surface is more flat
The uniformity for improving film layer, obtains better coating effects；The extension of single target usage time can replace target to avoid frequent
Material reduces the number for opening vacuum chamber, can both ensure the continuity of production, improves working efficiency, can also improve the clean of product
Cleanliness.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.
In the accompanying drawings：
Fig. 1 is magnetic structure figure in a kind of rectangle magnetic control sputtering cathode of high target utilization ratio of the present invention；
Fig. 2 is the magnetic chart in a kind of magnetic structure of the rectangle magnetic control sputtering cathode of high target utilization ratio of the present invention；
Fig. 3 is a kind of corresponding target etch topography of magnetic structure of the rectangle magnetic control sputtering cathode of high target utilization ratio of the present invention
Schematic diagram；
Fig. 4 is magnetic structure figure in traditional planar magnetic control sputtering cathode；
Fig. 5 is the magnetic chart in magnetic structure in traditional planar magnetic control sputtering cathode；
Fig. 6 is the corresponding target etch topography schematic diagram of magnetic structure in traditional planar magnetic control sputtering cathode；
In figure：1, magnet steel；2, yoke.
Specific implementation mode
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings, it should be understood that preferred reality described herein
Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
Embodiment：As shown in figures 1 to 6, a kind of rectangle magnetic control sputtering cathode of high target utilization ratio of the present invention, including magnet steel 1
With yoke 2, a cathode includes seven magnet steel 1, and a yoke 2 is connected with seven magnet steel 1 by magnetic force, adjacent twice magnetic
1 mutual magnetic circuit of steel is closed, and all magnet steel 1 are with middle magnet steel 1 for the symmetrical distribution of symmetry axis, and all magnet steel 1
The magnetic field of U-shaped is collectively formed.
Seven magnet steel, 1 non-equidistant is distributed, the distance that other unilateral magnet steel 1 of middle magnet steel 1 are distributed between each other without
It needs identical.
Seven magnet steel, 1 non-equal height, the height of other unilateral magnet steel 1 of middle magnet steel 1 is without equal.
Seven magnet steel, 1 non-equal in width, the width of other unilateral magnet steel 1 of middle magnet steel 1 is without identical.
Contain several magnet steel 1 in per pass magnet steel 1.
Specifically, when in use, by the rectangle magnetic control sputtering cathode of the high target utilization ratio in plated film, due to one
The quantity for the magnet steel 1 that yoke 2 is matched is changed to seven from original 3, can make to generate different from traditional magnetic circuit knot outside cathode
The magnetic field of structure, generation is also transformed into U-shaped by original V-type, can improve target than more comprehensively being performed etching to target
Utilization rate.
The rectangle magnetic control sputtering cathode of this kind of high target utilization ratio, due to magnet steel 1 number increase and special designing
Magnetic structure can make magnetic field be changed into U-shaped from traditional V-shape, can carry out greater area of etching to target surface, to
The utilization rate for improving target is promoted to 40% from current 20%, effectively saves material, meanwhile, because etched surface is more flat
It is smooth, the uniformity of film layer is can effectively improve, better coating effects are obtained；The extension of single target usage time, can keep away
Exempt from frequently to replace target, reduce the number for opening vacuum chamber, can both ensure the continuity of production, improves working efficiency, it can also
Improve the cleanliness factor of product.
Finally it should be noted that：The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention,
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features.
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in the present invention's
Within protection domain.
Claims (5)
1. a kind of rectangle magnetic control sputtering cathode of high target utilization ratio, including magnet steel（1）And yoke（2）, which is characterized in that one
Cathode includes seven magnet steel（1）, a yoke（2）With seven magnet steel（1）It is connected by magnetic force, adjacent twice magnet steel
（1）Mutual magnetic circuit is closed, all magnet steel（1）With middle magnet steel（1）For the symmetrical distribution of symmetry axis, and all magnetic
Steel（1）The magnetic field of U-shaped is collectively formed.
2. a kind of rectangle magnetic control sputtering cathode of high target utilization ratio according to claim 1, which is characterized in that seven magnetic
Steel（1）Non-equidistant is distributed.
3. a kind of rectangle magnetic control sputtering cathode of high target utilization ratio according to claim 1, which is characterized in that seven magnetic
Steel（1）Non- equal height.
4. a kind of rectangle magnetic control sputtering cathode of high target utilization ratio according to claim 1, which is characterized in that seven magnetic
Steel（1）Non- equal in width.
5. a kind of rectangle magnetic control sputtering cathode of high target utilization ratio according to claim 1, which is characterized in that per pass magnetic
Steel（1）Inside contain several magnet steel（1）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710322187.0A CN108728808A (en) | 2017-05-09 | 2017-05-09 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710322187.0A CN108728808A (en) | 2017-05-09 | 2017-05-09 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
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| Publication Number | Publication Date |
|---|---|
| CN108728808A true CN108728808A (en) | 2018-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710322187.0A Pending CN108728808A (en) | 2017-05-09 | 2017-05-09 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| CN109881167A (en) * | 2019-04-17 | 2019-06-14 | 合肥科赛德真空技术有限公司 | A kind of high efficiency magnetron sputtering planar cathode |
| CN110670039A (en) * | 2019-11-19 | 2020-01-10 | 广东腾胜科技创新有限公司 | Magnetic material coating production line with moving magnetic plate plane cathode |
| CN111876739A (en) * | 2020-08-04 | 2020-11-03 | 中国科学院兰州化学物理研究所 | Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof |
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| JP2004124171A (en) * | 2002-10-02 | 2004-04-22 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus and method |
| CN102131954A (en) * | 2008-08-29 | 2011-07-20 | 株式会社爱发科 | Magnetron sputter cathode, and filming apparatus |
| CN103046009A (en) * | 2011-10-13 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Plane magnetron sputtering cathode |
| CN103050358A (en) * | 2011-10-17 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Planar magnetron sputtering cathode |
| CN106435501A (en) * | 2016-10-15 | 2017-02-22 | 凯盛光伏材料有限公司 | Double closed loop magnetron sputtering cathode |
| CN206736351U (en) * | 2017-05-09 | 2017-12-12 | 杭州朗为科技有限公司 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
-
2017
- 2017-05-09 CN CN201710322187.0A patent/CN108728808A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004124171A (en) * | 2002-10-02 | 2004-04-22 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus and method |
| CN102131954A (en) * | 2008-08-29 | 2011-07-20 | 株式会社爱发科 | Magnetron sputter cathode, and filming apparatus |
| CN103046009A (en) * | 2011-10-13 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Plane magnetron sputtering cathode |
| CN103050358A (en) * | 2011-10-17 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Planar magnetron sputtering cathode |
| CN106435501A (en) * | 2016-10-15 | 2017-02-22 | 凯盛光伏材料有限公司 | Double closed loop magnetron sputtering cathode |
| CN206736351U (en) * | 2017-05-09 | 2017-12-12 | 杭州朗为科技有限公司 | A kind of rectangle magnetic control sputtering cathode of high target utilization ratio |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109735821A (en) * | 2019-03-19 | 2019-05-10 | 杭州朗为科技有限公司 | A kind of cathode of high field intensity high target utilization ratio |
| CN109881167A (en) * | 2019-04-17 | 2019-06-14 | 合肥科赛德真空技术有限公司 | A kind of high efficiency magnetron sputtering planar cathode |
| CN110670039A (en) * | 2019-11-19 | 2020-01-10 | 广东腾胜科技创新有限公司 | Magnetic material coating production line with moving magnetic plate plane cathode |
| CN111876739A (en) * | 2020-08-04 | 2020-11-03 | 中国科学院兰州化学物理研究所 | Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof |
| CN111876739B (en) * | 2020-08-04 | 2021-12-31 | 中国科学院兰州化学物理研究所 | Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof |
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