CN111876739B - Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof - Google Patents

Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof Download PDF

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CN111876739B
CN111876739B CN202010773225.6A CN202010773225A CN111876739B CN 111876739 B CN111876739 B CN 111876739B CN 202010773225 A CN202010773225 A CN 202010773225A CN 111876739 B CN111876739 B CN 111876739B
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magnetic steel
annular
target
rectangular cathode
wide
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CN111876739A (en
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张斌
高凯雄
贾倩
张俊彦
强力
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Lanzhou Institute of Chemical Physics LICP of CAS
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Lanzhou Institute of Chemical Physics LICP of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a wide-surface high-utilization-rate rectangular cathode target which comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and a plurality of annular magnetic steels in the same direction surrounding the central magnetic steel. The magnetic field surface of the annular magnetic steel and the soft iron bottom plate form an inclination angle of 10-15 degrees; the outermost annular runway magnetic steel is equal to the central magnetic steel in height, and the annular runway magnetic steel is lowered according to each step of 3mm from outside to inside; the width of the annular runway magnetic steel is gradually reduced from outside to inside. The magnetic field arrangement of the wide-surface rectangular cathode target designed by the invention can enable the utilization rate of the planar sputtering target to reach more than 50%. After the wide-surface rectangular cathode target is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the wide-surface rectangular cathode target, the utilization rate of the target is improved to be more than 80%, the film coating efficiency is improved, and resources are greatly saved.

Description

Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof
Technical Field
The invention relates to a rectangular cathode for magnetron sputtering and arc ion coating, in particular to a wide-surface rectangular cathode with high utilization rate.
Background
Along with the aggravation of energy and resource consumption, people gradually increase the consciousness of saving energy and resources, and novel anticorrosion and antifriction wear-resisting technologies continuously appear for reducing the consumption and waste of energy and resources. Surface treatment techniques such as electroplating, micro-arc oxidation, plasma spraying and the like are widely applied to the anticorrosion protection of materials and the reduction of friction coefficient.
Physical vapor deposition techniques, such as arc ion plating and magnetron sputtering, are increasingly widely regarded as pollution-free green surface treatment techniques and applied in large areas, compared with electroplating and micro-arc oxidation. However, the utilization rate of the traditional planar cathode target is only 30-40%, and the rest materials are treated as waste products, so that the resource loss is caused. How to further improve the utilization of planar cathodes is becoming a current technical challenge.
Disclosure of Invention
The invention aims to provide a wide-surface rectangular cathode target to improve the utilization rate of a planar cathode target.
Another object of the present invention is to provide a method for improving the utilization rate of the above-mentioned wide-faced rectangular cathode target.
A wide-face rectangular cathode target comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and annular runway magnetic steel surrounding the central magnetic steel, wherein the central magnetic steel and the annular runway magnetic steel are in different directions. That is, when the central magnetic steel is the N pole, the annular runway magnetic steel is the S pole, and when the central magnetic steel is the S pole, the outer annular runway magnetic steel is the N pole.
The magnetic field surface of the magnetic steel of the annular runway and the soft iron bottom plate form an inclination angle of 10-15 degrees. The inclination degree of the inclination angle is related to the actual width of the target surface, and the larger the width is, the smaller the inclination angle is, and the more favorable the efficient utilization of the cathode target material is.
The annular runway magnetic steel has a plurality of channels, namely a first annular runway magnetic steel, a second annular runway magnetic steel, a third annular runway magnetic steel and the like from inside to outside in sequence. The annular runway magnetic steels are all in the same direction (i.e. when the central magnetic steel is the N pole, all the annular runway magnetic steels are the S pole, and when the central magnetic steel is the S pole, all the outer ring runway magnetic steels are the N pole). The outermost annular runway magnetic steel and the central magnetic steel are equal in height, the annular runway magnetic steel from outside to inside is lowered according to each 3mm step, and the inclination angle between the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate is kept unchanged. The width of the annular runway magnetic steel is gradually reduced from outside to inside.
The central magnetic steel and the outermost annular magnetic steel are both neodymium iron boron or samarium cobalt strong magnetic steel. According to the requirement, the inner ring magnetic field can be neodymium iron boron or samarium cobalt strong magnetic steel or ferrite weak magnetic steel. The soft iron bottom plate and the magnetic steel are packaged in the aluminum alloy box body to ensure that the cathode target material is not in direct contact with water in the sputtering process.
The magnetic field arrangement of the wide-surface rectangular cathode target designed by the invention can enable the utilization rate of the planar sputtering target to reach more than 50%.
In order to further improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface, and the utilization rate of the target is improved to be more than 80%.
In conclusion, the invention not only improves the film coating efficiency, but also greatly saves resources by the arrangement mode of the magnetic steel and the arrangement method of the cathode target.
Drawings
FIG. 1 is a schematic structural view of a planar rectangular cathode target according to example 1 of the present invention.
FIG. 2 is a layout diagram of the annular magnetic steel of the rectangular cathode target of the embodiment 1 of the invention.
FIG. 3 is a schematic structural view of a rectangular planar cathode target according to example 2 of the present invention.
Fig. 4 is a schematic diagram of target design and secondary splicing utilization in embodiment 3 of the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings.
Example 1
As shown in fig. 1 and 2, the wide rectangular cathode target (the target width is 120 mm) includes a soft iron bottom plate and a central magnetic steel S (the width is 18 mm) disposed on the soft iron bottom plate, and two annular runway magnetic steels N are disposed outside the central magnetic steel S. Wherein the width of the outer ring magnetic steel N is 12 mm; the width of outer ring magnetic steel N is 8mm, and the interval between center magnetic steel S and inner ring magnetic steel N is 13.5 mm. The inclination angle between the magnetic field surface of the outer ring magnetic steel and the soft iron bottom plate is 15 degrees. The outer ring magnetic steel N and the central magnetic steel S are equal in height and are 35 mm. The height of the inner ring-shaped runway magnetic steel is 3mm lower than that of the outer ring magnetic steel, namely the height is 32 mm.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target from the traditional 35% to more than 50%.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first sputtering, the target materials of the non-sputtered area and the sputtered area are cut and separated, and the non-sputtered area is not sputteredThe emitting area can be used as the magnetron sputtering target again after being spliced according to the structure of the wide-surface rectangular cathode target. As shown in fig. 4: when the target width is 120mm, the target splicing basic unit is designed to be 120x120mm2The effective sputtering width at this time was 35mm racetrack. The center is 30mm and the edge is a 12.5mm non-sputtered area. After being processed and cut, 2 targets with the width of 30mm and 5 targets with the width of 12mm are combined into 120x120mm2The target can be reused after rotating 90 degrees.
After the spliced sputtering target is reused, the utilization rate of the target is improved from 50% to more than 80%.
Example 2
As shown in fig. 2, the wide rectangular cathode target (target width is 150 mm) includes a soft iron bottom plate and a central magnetic steel S (width is 20mm, height is 20 mm) disposed on the soft iron bottom plate, three annular runway magnetic steels N are disposed outside the central magnetic steel S, and a first annular runway magnetic steel, a second annular runway magnetic steel, and a third annular runway magnetic steel are sequentially disposed from inside to outside. The width of the third annular runway magnetic steel N is 17mm, and the height of the third annular runway magnetic steel N is 20 mm; the width of the second annular runway magnetic steel N is 9mm, and the height of the second annular runway magnetic steel N is 17 mm; the width of first annular runway magnet steel N is 7mm, and the height is 14 mm. The distance between the central magnetic steel S and the first annular magnetic steel N is 14.5mm, and the distance between the first annular magnetic steel and the first annular magnetic steel is 13 mm. The inclination angles of the magnetic field surface of the first, second and third ring star magnetic steels and the soft iron bottom plate are all 12 degrees.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target material to more than 50 percent.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface. As shown in particular in figure 3. When the target width is 150mm, for example, the target splicing basic unit is designed to be 150x150mm2The effective sputtering width at this time was 45mm racetrack. The center is 35mm and the edge is a 12.5mm non-sputtered area. After cutting, 3 targets with 30mm width and 5 targets with 12mm width are combined into 100x100mm2The target can be reused after rotating 90 degrees.
Example 3
As shown in fig. 3, the wide rectangular cathode target (the target width is 170 mm) includes a soft iron bottom plate and a central magnetic steel S (the width is 20mm, and the height is 20 mm) disposed on the soft iron bottom plate, three annular runway magnetic steels N are disposed outside the central magnetic steel S, and a first annular runway magnetic steel, a second annular runway magnetic steel, and a third annular runway magnetic steel are sequentially disposed from inside to outside. The width of the third annular runway magnetic steel N is 15mm, and the height of the third annular runway magnetic steel N is 20 mm; the width of the second annular runway magnetic steel N is 11mm, and the height of the second annular runway magnetic steel N is 17 mm; the width of first annular runway magnet steel N is 8mm, and the height is 14 mm. The distance between the central magnetic steel S and the first annular magnetic steel N is 15.5mm, and the distance between the first annular magnetic steel and the first annular magnetic steel is 13 mm. The inclination angles of the magnetic field surface of the first, second and third ring star magnetic steels and the soft iron bottom plate are both 15 degrees.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target material to more than 50 percent.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface. As shown in particular in fig. 4. When the target width is 170mm, the basic unit of target splicing is designed to be 170x170mm2The effective sputtering width at this time was 50mm racetrack. The center is 40mm and the edge is a 15mm non-sputtered area. After cutting, 3 targets with a width of 40mm and 4 targets with a width of 12.5mm are combined into 170x170mm2The target can be reused after rotating 90 degrees.

Claims (4)

1. A wide-faced rectangular cathode target, characterized in that: the magnetic steel track comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and annular track magnetic steel surrounding the central magnetic steel, wherein the central magnetic steel and the annular track magnetic steel are in opposite directions; the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate form an inclination angle of 10-15 degrees; the annular runway magnetic steel has a plurality of paths, the annular runway magnetic steel is in the same direction, the height of the outermost annular runway magnetic steel is equal to that of the central magnetic steel, the annular runway magnetic steel is reduced according to each 3mm step from outside to inside, and the inclination angle between the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate is kept unchanged.
2. The wide rectangular cathode target according to claim 1, wherein: the width of the annular runway magnetic steel is gradually reduced from outside to inside.
3. The wide rectangular cathode target according to claim 1, wherein: the central magnetic steel and the outermost annular magnetic steel are both neodymium iron boron or samarium cobalt strong magnetic steel; the inner ring magnetic steel is neodymium iron boron, samarium cobalt strong magnetic steel or ferrite weak magnetic steel.
4. The method for improving the utilization rate of the wide rectangular cathode target as claimed in claim 1, wherein after the wide rectangular cathode target is used for the first time in a sputtering mode, the target material in the non-sputtering area and the target material in the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target material again after being spliced according to the structure of the wide rectangular cathode target.
CN202010773225.6A 2020-08-04 2020-08-04 Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof Active CN111876739B (en)

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CN114908325A (en) * 2022-04-29 2022-08-16 宣城开盛新能源科技有限公司 Device and method for improving sputtering film thickness uniformity of planar cadmium sulfide target

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2058142A (en) * 1979-07-31 1981-04-08 Nordiko Ltd Sputtering electrodes
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN108728808A (en) * 2017-05-09 2018-11-02 杭州朗为科技有限公司 A kind of rectangle magnetic control sputtering cathode of high target utilization ratio
CN110643966A (en) * 2019-11-14 2020-01-03 谢斌 Device and method for improving utilization rate of magnetron sputtering target
CN110714186A (en) * 2018-07-11 2020-01-21 君泰创新（北京）科技有限公司 Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2058142A (en) * 1979-07-31 1981-04-08 Nordiko Ltd Sputtering electrodes
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN108728808A (en) * 2017-05-09 2018-11-02 杭州朗为科技有限公司 A kind of rectangle magnetic control sputtering cathode of high target utilization ratio
CN110714186A (en) * 2018-07-11 2020-01-21 君泰创新（北京）科技有限公司 Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device
CN110643966A (en) * 2019-11-14 2020-01-03 谢斌 Device and method for improving utilization rate of magnetron sputtering target

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