CN217324266U

CN217324266U - Deposition system based on large-area rectangular magnetron sputtering target gun

Info

Publication number: CN217324266U
Application number: CN202122674638.1U
Authority: CN
Inventors: 张松林; 张斌
Original assignee: Chengdu Chaomai Optoelectronics Technology Co ltd
Current assignee: Chengdu Chaomai Optoelectronics Technology Co ltd
Priority date: 2021-11-03
Filing date: 2021-11-03
Publication date: 2022-08-30
Anticipated expiration: 2031-11-03

Abstract

The utility model discloses a sedimentation system based on large tracts of land rectangle magnetron sputtering target gun, including target and backplate, one of them one side of target is the plane, the opposite side of target is provided with first arch, the surface that the target was provided with first protruding one side is provided with wave linear texture, one of them side of backplate is the plane, another terminal surface of backplate is seted up flutedly, protruding with the recess adaptation; the utility model discloses in, the effectual magnetron sputtering target of having solved is punctured and reduces life's problem to and among the magnetron sputtering process, because the problem that the utilization ratio is low that needs to change the target and lead to after individual point is punctured, increase the thickness in the high region of target sputter density, reduce the target both sides simultaneously and be unnecessary part in the future, adopt this kind of target to carry out magnetron sputtering coating film, the target utilization ratio is high, and the sputtering homogeneity is good.

Description

Deposition system based on large-area rectangular magnetron sputtering target gun

Technical Field

The utility model relates to a magnetron sputtering technical field specifically is a deposition system based on large tracts of land rectangle magnetron sputtering target gun.

Background

Magnetron sputtering is one of physical vapor deposition, and a general sputtering method can be used for preparing multi-materials such as metal, semiconductor, insulator and the like and has the advantages of simple equipment, easy control, large coating area, strong adhesive force and the like; principle of magnetron sputtering system: the abnormal glow discharge ionizes the argon filled in the vacuum chamber, a large number of electrons make spiral line motion along the direction of magnetic force lines under the constraint of a magnetic field, argon molecules are continuously impacted, so that a large number of argon positive ions and electrons are continuously ionized, the argon positive ions accelerate and bombard the target material serving as a cathode under the action of the electric field, a large number of target material atoms are sputtered, and neutral target material atoms (or molecules) are deposited on the substrate to form a coating film; the ionized electrons, referred to as secondary electrons, will continue to collide with the argon molecules and continue to ionize them, thereby sustaining sputtering of the target.

The conventional target material is of a rectangular structure and comprises a back plate and a target material arranged on the back plate, the target material is welded on the back plate through an indium medium, but the target material is a rectangular target material and is consistent in thickness, the cathode magnetic field is not uniformly distributed, the target material after use can form tracks on the surface, the height of the target material is uneven, the etching rate is not uniformly distributed, individual points are easy to be punctured, and the target material needs to be replaced by a new target material after being punctured, so that the target material in the prior art is low in utilization rate, and the conventional magnetron sputtering target gun is simple in structure, has many defects and needs to be improved, and therefore the use performance is reduced.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems in the prior art, the utility model provides a deposition system based on large tracts of land rectangle magnetron sputtering target gun.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a magnetron sputtering target comprises a target material and a back plate, wherein one side of the target material is a plane, a first bulge is arranged on the other side of the target material, and wavy linear textures are arranged on the surface of one side, provided with the first bulge, of the target material;

one side of the back plate is a plane, the other end face of the back plate is provided with a groove, the protrusion is matched with the groove, and one end of the back plate provided with the groove is fixedly connected with one end of the target material, which is provided with the protrusion.

Furthermore, one end of the target material, which is provided with the wavy linear texture, is also provided with second bulges, the second bulges are uniformly distributed at intervals, and the second bulges are symmetrically arranged.

Furthermore, a second groove is further formed in one side, provided with the first groove, of the back plate, the second groove is matched with the second protrusion, and the second groove and the second protrusion are correspondingly arranged.

Furthermore, the first protrusion is annularly arranged, and the first groove is annularly formed.

Further, the second protrusion is in a cylindrical shape, and the second groove is in a cylindrical hollow groove structure.

Furthermore, a connecting medium is arranged between the target material and the back plate, and the target material is fixedly connected with the back plate through the connecting medium.

Furthermore, the second protrusions are uniformly distributed at the edge of the target material.

Furthermore, a third bulge is arranged in the middle of the first bulge, and a groove matched with the third bulge is formed in the back plate.

Further, the first protrusion and the second protrusion have a height of 18 mm.

The utility model also provides a deposition system based on large tracts of land rectangle magnetron sputtering target rifle, include a magnetron sputtering target.

Compared with the prior art, the beneficial effects of the utility model reside in that:

the target material is provided with the bulges at the position which is easy to be punctured, the target material is fixedly connected with the back plate, the surface of the back plate facing the target material is provided with the groove, the groove is matched with the bulges arranged on the target material, the first bulges and the second bulges of the target material are correspondingly arranged in the groove of the back plate, the cost is controlled, meanwhile, the problem that the magnetron sputtering target is punctured and the service life is shortened is effectively solved, the problem that the utilization rate is low due to the fact that the target material needs to be replaced after individual points are punctured in the magnetron sputtering process is solved, the thickness of an area with high sputtering density of the target material is increased, meanwhile, redundant parts on two sides of the target material are reduced, the target material is adopted to carry out magnetron sputtering coating, the utilization rate of the target material is high, and the sputtering uniformity is good.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is a schematic view showing the distribution of the protrusions of the target material according to the present invention;

fig. 3 is a schematic diagram showing the position of the back plate groove of the target material of the present invention;

fig. 4 shows a schematic view of a target according to one embodiment of the present invention;

fig. 5 is a schematic cross-sectional view of the back plate of the present invention.

In the figure, 1-target, 11-first bump, 12-second bump, 13-third bump, 2-back plate, 21-first groove, 22-second groove, 3-connecting medium.

Detailed Description

In order to clearly understand the technical features, objects and effects of the present invention, the detailed embodiments of the present invention will be described with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.

The present invention will be further described with reference to the following examples, which are only some, but not all, of the examples of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work all belong to the protection scope of the present invention.

In the description of the present invention, it should be understood that the terms "counterclockwise", "clockwise", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Example 1:

in the magnetron sputtering process, working gas is ionized by an electric field (about 500V) in a vacuum environment, gas particles with positive charges impact a target material serving as a cathode and bombard the target material, the bombarded particles have the average energy of dozens of electron volts, the particles impact a substrate such as glass opposite to the target material and are deposited, and finally a layer of film is formed on the surface of the substrate.

The conventional target structure is uniform in thickness, the surface of the conventional target structure is initially parallel to the plane of the NS pole, and the magnetic field intensity at different positions on the plane is different, so that the practical problem is that the density of particle attack received at different positions is different, so that the etching speed at different positions is different, the areas on and near the middle vertical line of the NS pole are concave due to fast etching, the sputtered surface of the target is not a plane any more, and the magnetic field intensity is higher because the middle vertical line is closer to the NS pole, so that more particles are forced to bombard the positions, the unbalance and the etching difference are intensified, the sputtering rate of the material is only about 32-35%, and finally the target is wasted due to the fact that the target is used up.

Because the particles bombarded from the two sides of the middle line of the magnetic field can deflect under the action of the magnetic field and impact the side surface in the initial direction, the particles can not be deposited on the machine body but can be deposited on the baffle plates with the side edges used for controlling the uniformity, the sputtering is ineffective, the particle deposition on the baffle plates is increased to a certain extent, the probability of slag falling is increased, and the possibility of waste products of the machine body is increased.

A magnetron sputtering target is disclosed, as shown in fig. 1-4, comprising a target material 1 and a back plate 2, a connecting medium 3 is arranged between the target material 1 and the back plate 2, the target material 1 is fixedly connected with the back plate 2 through the connecting medium 3, one side of the target material 1 is a plane, the other side of the target material 1 is provided with a first bulge 11, the surface of one side of the target material 1 provided with the first bulge 11 is provided with a wavy linear texture, the surface is provided with the wavy linear texture, thereby increasing the specific surface area of the target material 1 and reducing the probability of the target material 1 being punctured, the first bulge 11 is arranged at the position of the target material 1 which is easy to be punctured, one end of the target material 1 provided with the wavy linear texture is also provided with a second bulge 12, a plurality of second bulges 12 are evenly distributed at intervals, two adjacent second bulges 12 are symmetrically arranged, the middle part of the first bulge 11 is provided with a third bulge 13, the back plate 2 is provided with a groove matched with the third bulge 13, the first bulge 11, the second bulge 12 and the third bulge 13 are arranged at positions where the target 1 is easy to be punctured, the target is generally rectangular, and the positions where the target is easy to be punctured are arranged on the periphery of the target 1, so that the first bulge 11 arranged in an annular shape increases the thickness of the periphery of the target 1, particularly the second bulge 12 is arranged on four corners of the target, grooves matched with the bulges are correspondingly formed in the back plate 2, and the effective utilization rate of the target 1 is improved in a thickness increasing mode;

as shown in fig. 5, in order to better connect the backing plate 2 with the magnetron sputtering system and the target 1 respectively, so that the target 1 and the backing plate 2 are kept flat during welding, preferably, the heights of the first protrusion 11, the second protrusion 12 and the third protrusion 13 are all 18mm, the concave depth of the groove corresponding to the protrusion is adapted to the protrusion, one side of the backing plate 2 is a plane, the other end surface of the backing plate 2 is provided with a first groove 21, the protrusion 11 is adapted to the first groove 21, the side of the backing plate 2 provided with the first groove 21 is further provided with a second groove 22, the second groove 22 is adapted to the second protrusion 12, the second groove 22 is arranged corresponding to the second protrusion 12, the first protrusion 11 is arranged in a ring shape, the first groove 12 is arranged in a ring shape, the second protrusion 12 is arranged in a cylinder shape, the second groove 22 is in a cylindrical hollow groove structure, and the second protrusion 12 is uniformly distributed at the edge of the target 1, one end of the back plate 2 provided with the first groove 21 is fixedly connected with one end of the target 1 formed with the bulge 11. The utilization rate of the target can be improved, the effective utilization rate of the target is increased, namely, the target can be deposited on a product under the conditions of the same baffle, the same environment and the set power, and the transverse uniformity of effective sputtering on the product is ensured.

Further, in the implementation process, different kinds of targets 1 can be selected and adapted according to the product to be deposited, and the first protrusion 11, the second protrusion 12 and the third protrusion 13 on the target 1 can be independently arranged, wherein the number of the second protrusions 12 can be appropriately adjusted according to the actual use environment, and is preferably four second protrusions 12.

The utility model also provides a deposition system based on large tracts of land rectangle magnetron sputtering target rifle, including any one of above-mentioned scheme a magnetron sputtering target, this magnetron sputtering target is used for forming a film to the product in magnetron sputtering system.

Example 2:

further, as shown in fig. 4, in order to ensure the uniformity of effective sputtering on the product in the transverse direction, the second protrusions 12 are semi-annular, the third protrusions 13 are arranged between the two semi-annular, the third protrusions 13 are thick in the middle and thin in two sides, and the two ends are arc-shaped.

The above is only a preferred embodiment of the present invention, and certainly, the scope of the present invention should not be limited thereby, and therefore, the present invention is intended to cover all modifications and equivalents of the claims and the scope of the present invention.

Claims

1. A deposition system based on a large-area rectangular magnetron sputtering target gun comprises a magnetron sputtering target, wherein the magnetron sputtering target comprises a target material (1) and a back plate (2), and is characterized in that one side of the target material (1) is a plane, a first bulge (11) is arranged on the other side of the target material (1), and wavy linear textures are arranged on the surface of one side, provided with the first bulge (11), of the target material (1);

one side of the back plate (2) is a plane, a first groove (21) is formed in the other end face of the back plate (2), the first protrusion (11) is matched with the first groove (21), and one end, provided with the first groove (21), of the back plate (2) is fixedly connected with one end, provided with the first protrusion (11), of the target material (1).

2. The deposition system based on the large-area rectangular magnetron sputtering target gun according to claim 1, wherein one end of the target (1) formed with the wavy linear texture is further provided with second protrusions (12), a plurality of the second protrusions (12) are uniformly distributed at intervals, and the second protrusions (12) are symmetrically arranged.

3. The deposition system of claim 2, wherein the back plate (2) is further formed with a second groove (22) at a side thereof where the first groove (21) is formed, the second groove (22) is adapted to the second protrusion (12), and the second groove (22) is disposed corresponding to the second protrusion (12).

4. A deposition system based on a large area rectangular magnetron sputtering target gun according to claim 3 characterized in that the first protrusion (11) is arranged in a ring shape and the first groove (21) is opened in a ring shape.

5. The deposition system based on the large-area rectangular magnetron sputtering target gun as claimed in claim 4, wherein the second protrusion (12) is arranged in a cylindrical shape, and the second groove (22) is in a cylindrical hollow groove structure.

6. The deposition system based on the large-area rectangular magnetron sputtering target gun according to claim 5, characterized in that a connecting medium (3) is arranged between the target (1) and the backing plate (2), and the target (1) is fixedly connected with the backing plate (2) through the connecting medium (3).

7. A deposition system based on a large area rectangular magnetron sputtering target gun according to claim 6 characterized in that the second protrusions (12) are evenly distributed at the edge of the target (1).

8. The large-area rectangular magnetron sputtering target gun based deposition system according to claim 7, wherein a third protrusion (13) is arranged in the middle of the first protrusion (11), and a groove adapted to the third protrusion (13) is formed on the back plate (2).

9. A deposition system based on a large area rectangular magnetron sputtering target gun according to any of the claims 2 to 8 characterized in that the height of the first (11) and the second (12) protrusions is 18 mm.