CN116190180B - Magnetron device for PVD planar target and magnetron sputtering equipment - Google Patents
Magnetron device for PVD planar target and magnetron sputtering equipment Download PDFInfo
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- CN116190180B CN116190180B CN202310083001.6A CN202310083001A CN116190180B CN 116190180 B CN116190180 B CN 116190180B CN 202310083001 A CN202310083001 A CN 202310083001A CN 116190180 B CN116190180 B CN 116190180B
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- 238000003491 array Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a magnetic control device and a magnetic control sputtering device for a PVD planar target, wherein the magnetic control device comprises a magnetron, and comprises an outer magnetic assembly, an inner magnetic assembly and a middle magnetic assembly, wherein the outer magnetic assembly comprises an outer straight line unit and an outer arc-shaped unit connected with the end part of the outer straight line unit, the inner magnetic assembly comprises an inner straight line unit, the middle magnetic assembly comprises a middle straight line unit, the outer straight line unit, the inner straight line unit and the middle straight line unit comprise a plurality of magnets, the magnetic pole connecting line of the magnets in the outer straight line unit and the inner straight line unit is perpendicular to the planar target, the magnetic pole connecting line of the magnets in the middle straight line unit is parallel to the planar target, and two magnetic poles of the magnets in the middle straight line unit face the outer straight line unit and the inner straight line unit respectively. The invention can reduce the difference of etching capability between the arc-shaped part and the straight line part, improve the utilization rate of the target material and ensure the ignition and maintenance of plasma.
Description
Technical Field
The invention relates to the technical field of vacuum deposition, in particular to a magnetron device for a PVD planar target and magnetron sputtering equipment.
Background
Since the birth of magnetron sputtering coating technology, the main problems of magnetron sputtering are: the problems of target utilization rate, deposition efficiency, film uniformity, film compactness, stability in the film coating process, and the like are solved. For planar target magnetron sputtering, the orthogonal electromagnetic field is restrained in a closed magnetic force line due to the action relation of the orthogonal electromagnetic field on sputtering ions, so that the sputtering target material generates uneven etching phenomenon in the sputtering process. Once the target is etched through, the target is scrapped, so that the utilization rate of the target is always low, and is generally below 40%. The target material is a basic consumable material in the magnetron sputtering process, the use amount is large, and the high and low utilization rate of the target material plays a vital role in the technological process and the production period. Although the target material can be recycled, the target material utilization rate still has great influence on the control of the enterprise cost and the improvement of the competitiveness of the enterprise product. Therefore, attempts to improve target utilization are necessary, and many manufacturers have made many improvements.
The problem of non-uniformity in etching of the PVD target surface, i.e., the depth distribution of the grooves, and thus low target utilization results from the specific design and motion profile of the magnetron. How to improve target utilization by optimizing the design of a rotating planar magnetron for planar circular targets is described in detail in U.S. Pat. No. 7,186,319 to Yang et al. Circular targets are commonly used in PVD coating processes for 6, 8, and 12 inch wafers.
Over the past twenty years, rectangular planar target magnetron sputtering technology has been under great development for the manufacture of flat panel displays, such as for computer displays and television screens. Magnetron sputtering is the preferred method of manufacturing the conductive layer of the display screen, and the conductive layer is formed by depositing aluminum, molybdenum and transparent conductors (such as Indium Tin Oxide (ITO)) on common rectangular large-area panel glass or high polymer sheets. The final fabricated panel may include thin film transistors, plasma displays, field emitters, liquid crystal display (liquid crystal) elements, or Organic Light Emitting Diodes (OLEDs). Similar techniques can be used for optical film layers for coated glass windows. The main difference between the magnetron sputtering technology of rectangular planar targets and the wafer magnetron sputtering technology which is developed for a long time and is mature is the large size of the former and the rectangular shape of the latter, and the latter is a circular target with a relatively small size.
Demaray et al, in U.S. Pat. No. 5565071a, describe a flat plate sputtering apparatus 20, as shown in fig. 1, whose thin film deposition chamber mainly includes: a vacuum chamber 22; a rectangular sputtering base 24, which is typically electrically grounded; a rectangular glass panel or other substrate 26 is supported by the base 24; a rectangular sputtering planar target 28 corresponds parallel to the substrate 26. The planar target 28 is, at least on its surface, a metal to be sputter deposited onto the substrate. The planar target 28 is vacuum sealed to the chamber 22 via an insulating plate 30.
The thin plate of planar target 28 to be sputtered is typically bonded to a backing plate 32 on which cooling water channels are formed to cool the planar target 28. Sputtering gas, typically argon, flows into the vacuum chamber 22. Advantageously, backing cavity 34 is vacuum sealed to the backside of planar target backing plate 32 via insulating plate 36 and pumped to low pressure with a mechanical vacuum pump, thereby substantially eliminating the pressure differential across large area planar target 28 and its backing plate 32, as well as the large amount of deformation that may be caused by the large pressure differential. Thus, the large area planar target 28 and its backing plate 32 can be made thinner.
The dc power supply applies a negative voltage to the cathode of planar target 28, noting that the negative voltage here is relative to the pedestal electrode, i.e., pedestal 26 or other grounded component of the chamber, such as a shadow mask, to generate an electric field within PVD vacuum chamber 22 for accelerating the Ar ion sputter target and generating electrons from the target that are used to generate and sustain plasma 38 near the target surface. Positive argon ions are attracted to the planar target 28 and a portion of the sputtered metal atoms deposit onto the substrate 26 and form a thin film layer thereon that contains at least a portion of the material composition of the target. The metal oxide or nitride may be deposited in a process called "reactive magnetron sputtering" by additionally supplying oxygen or nitrogen gas into the vacuum chamber 22 during the metal magnetron sputtering.
To increase the sputtering rate, the linear magnetron 40, a bottom view of which is illustrated in FIG. 2, is conventionally placed on the backside of the planar target backing plate 32. It has a pole 42 in a central position surrounded by an outer pole 44 of opposite polarity to create a magnetic field within the chamber parallel to the etched surface of the planar target 28. The pole 42 is separated from the outer pole 44 by a substantially constant gap 46 that corresponds to the high density closed loop plasma 38 generated at the surface of the planar target 28. The outer pole 44 is composed of two straight portions 48 and of two semicircular portions 50.
The linear magnetron 40 applies an external magnetic field to trap electrons and confine the plasma near the target, thereby increasing the density of the plasma and thus the sputter rate of the planar target 28. The closed shape of the magnetic field along a single closed track creates a closed plasma loop that is generally formed along the gap 46 and effectively prevents leakage of plasma from the ends on both sides. It should also be noted that the linear magnetron 40 is small in size relative to the size of the planar target 28, requiring the linear magnetron 40 to scan back and forth behind the planar target 28 to achieve full area etching of the target surface.
Typically, the lead screw mechanism easily drives a linear scan, as disclosed in U.S. Pat. No. 5855444 to Halsey et al. Wherein the magnetron assembly moves in the direction indicated by the arrow within the magnetron chamber, the magnetron assembly is supported on a central bearing support beam, and a set of bearing tracks support the magnetron assembly through a set of bearing members. Lateral movement of the magnetron assembly is produced by rotating a threaded drive rod that engages a threaded drive nut contained in a threaded drive nut housing. The threaded drive nut housing engages and is vertically slidable on a pair of connecting pins.
Coupled two-dimensional scanning of such linear magnetrons is described in U.S. Pat. nos. 6322670 and 6416630 by De Bosscher et al. The magnetron described by De Bosscher et al was originally developed for rectangular panels of approximately 400mm x 600mm in size. However, for economic reasons of mass production scale, and also for providing larger area displays, the size of the panels has been increasing for many years, as has the size of the targets.
In one approach to accommodating larger area targets, the "racetrack" shaped linear magnetron 40 in fig. 2 is replicated up to 9 times laterally along the scan direction to cover most of the area of the target, see U.S. Pat. No. 5458759 to Hosokawa et al, but this approach still requires averaging the magnetic field distribution by scanning.
Tepman in U.S. patent application 2006/0049040A1 discloses various magnetrons having a curled plasma loop, particularly magnetrons having a rectangular profile. The magnetrons may be arranged in a serpentine shape with parallel straight portions connected by curved portions; or in a rectangular spiral shape with straight portions arranged in orthogonal directions. The plasma ring is formed between inner and outer magnetic poles, with the inner magnetic pole being formed in a curled shape and the outer magnetic pole being of opposite magnetic polarity to the inner magnetic pole. Fig. 3 and 4 are schematic diagrams of the design of the magnetrons 52, 56 and the corresponding plasma closed loop 54, 58 provided by Tepman. Tepman also gives various magnetron scanning schemes.
It has been found from the foregoing that in order to solve the problems of overall etching of the target and uniformity of film coating on the substrate, it is common practice to scan the magnetron relative to the target, however, when the magnetron is scanned in a direction perpendicular to the length direction thereof, the etching depth of the planar target by the arc end of the magnetron will be greater than that of the straight line portion, and Chen Xiaotong in chinese patent CN 111910162A proposes a solution in which a processor and a primary magnetic field source are provided outside the chamber. The processor is used for acquiring consumption information of the target in the magnetron sputtering process. It should be noted that the consumption information of the target is used to reflect the consumption of the target in the magnetron sputtering process, such as thickness data of each region of the target, and such as power and duration of bombardment of the target. The processor may determine compensation information to compensate for the non-uniform magnetic field generated by the magnet based on the consumption information. The secondary magnetic field source is arranged opposite to the magnet and is electrically connected with the processor, and is used for generating a corresponding secondary magnetic field according to the compensation information so as to compensate the uneven magnetic field generated by the magnet, so that the magnetic field intensity of the region with the faster consumption of the target is reduced, the consumption speed of the region with the faster consumption of the target is further reduced, or the magnetic field intensity of the region with the slower consumption of the target is increased, the consumption speed of the region with the slower consumption of the target is further increased, the uniformity of the consumption of the target is further improved, the utilization rate of the target is further improved, and meanwhile, the uniformity of a film forming layer on the substrate is improved. However, this method requires a complex magnetic control structure, introduces a complex control flow, and increases the cost.
In addition, some magnetron designs and manufacturers directly weaken the magnetic field strength of the arc end, and in this way, the plasma density is reduced, so that the etching of the target by the arc end is reduced, however, since the etching capability of the arc end is significantly stronger than that of the straight line part, the magnetic field strength of the arc end needs to be greatly reduced, and the ignition and the maintenance of the plasma in the sputtering process are affected.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the magnetron device for the PVD planar target provided by the invention can reduce the difference of etching capability between the arc-shaped part and the straight line part, improve the utilization rate of the target material and ensure the ignition and maintenance of plasma.
The invention also provides a magnetron sputtering device.
A magnetron apparatus for PVD planar targets according to a first embodiment of the invention comprises:
the magnetron comprises an outer magnetic component, an inner magnetic component and an intermediate magnetic component, wherein the polarity of the outer magnetic component is opposite to that of the inner magnetic component, the outer magnetic component comprises an outer linear unit and an outer arc-shaped unit connected with the end part of the outer linear unit, the inner magnetic component comprises an inner linear unit, the intermediate magnetic component comprises an intermediate linear unit, the outer linear unit is arranged at intervals on two opposite sides of the inner linear unit along a first direction, the intermediate linear unit is arranged in a gap between the outer linear unit and the inner linear unit, the outer linear unit, the inner linear unit and the intermediate linear unit comprise a plurality of magnets distributed along a second direction, the magnets in the outer straight line unit, the inner straight line unit and the middle straight line unit are symmetrically distributed by taking the central line of the inner straight line unit as a symmetrical axis, the first direction is perpendicular to the straight line direction of the straight line unit, the second direction is parallel to the straight line direction of the straight line unit, the second direction is perpendicular to the first direction, the magnetic pole connecting line of the magnets in the outer straight line unit and the magnetic pole connecting line of the magnets in the inner straight line unit are perpendicular to a plane target, the magnetic pole connecting line of the magnets in the middle straight line unit is parallel to the plane target, the two magnetic poles of the magnets in the middle straight line unit face the outer straight line unit and the inner straight line unit respectively, the magnetic poles of the magnets in the middle straight line unit are consistent with the magnetic poles of the magnets in the outer magnetic component facing the plane target, the inner magnetic pole of the magnet in the middle straight line unit is consistent with the magnetic pole of the magnet in the inner magnetic assembly facing the plane target;
A driving device for driving the magnetron to move along the first direction;
at least the outer straight line unit, the inner straight line unit and the middle straight line unit form a straight line part, at least the outer arc unit forms an arc part, and the maximum magnetic field intensity applied to the planar target by the straight line part is larger than the maximum magnetic field intensity applied to the planar target by the arc part.
The magnetic control device provided by the embodiment of the invention has at least the following beneficial effects:
the maximum magnetic field intensity applied by the arc-shaped part to the target is set to be smaller than the maximum magnetic field intensity applied by the linear part to the target, so that the difference of etching capability between the arc-shaped part and the linear part can be reduced, the problem of uneven etching of the planar target is further improved, and the utilization rate of the planar target is improved. In addition, the invention enhances the intensity of the linear magnetic field and improves the etching capability of the linear part, so that the embodiment can ensure the ignition and maintenance of the plasma without reducing the intensity of the magnetic field applied by the arc part to the planar target or reducing the reduction amplitude.
In other embodiments of the invention, the driving means is at least for driving the magnetron to reciprocate in the second direction relative to the planar target.
In other embodiments of the present invention, the end of the outer straight line unit facing the outer arc unit includes a plurality of groups of outer magnets, the magnetic field strength applied to the planar target by each group of outer magnets decreases in sequence along the direction from the outer straight line unit to the outer arc unit, and the maximum magnetic field strength applied to the planar target by the arc portion is not greater than the magnetic field strength applied to the planar target by the outer magnet of the endmost group.
In other embodiments of the present invention, the outer straight line unit includes at least one of the following schemes along the direction from the outer straight line unit to the outer arc unit:
the cross-sectional areas of the outer magnets of each group, which are parallel to the planar target, are sequentially reduced;
the heights of the outer magnets of each group are sequentially reduced;
the intervals between the outer magnets and the planar targets of each group are sequentially increased;
each group of the outer magnets is made of different materials with sequentially weakened magnetic field intensity.
In other embodiments of the present invention, the end of the inner linear unit facing the arc portion includes a plurality of sets of inner magnets corresponding to the plurality of sets of outer magnets, and distances between the inner magnets of each set facing the end of the corresponding outer magnet and the center line of the inner linear unit sequentially increase along the direction from the inner linear unit to the arc portion.
In other embodiments of the present invention, the inner magnetic assembly further includes an inner arc unit, the outer arc unit and the inner arc unit form the arc portion, an end of the inner straight line unit facing the arc portion includes two inner magnet arrays, each of the inner magnet arrays includes a plurality of sets of the inner magnets, and the inner arc unit is connected to ends of the two inner magnet arrays;
and the distance between the two inner magnet arrays is sequentially increased along the direction from the inner linear unit to the arc-shaped part.
In other embodiments of the invention, the outer side faces of the magnets in the outer arc units are flush.
In other embodiments of the present invention, the length of the outer linear unit is longer than the length of the intermediate linear unit so that an end of the outer linear unit can protrude beyond the intermediate linear unit in the second direction, and an excess portion of the outer linear unit is provided with a plurality of sets of the outer magnets.
In other embodiments of the present invention, the outer arc unit includes a plurality of sets of outer magnets, and the magnetic field strength applied to the planar target by each set of outer magnets sequentially decreases in a direction from an end to an apex of the arc.
A magnetron sputtering apparatus according to a second embodiment of the invention includes:
a vacuum chamber;
the magnetic control device is used for controlling the magnetic control device;
the target mounting device is used for fixing the planar target in the vacuum chamber;
and the base station is used for fixing the substrate in the vacuum chamber.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a typical magnetron sputtering apparatus in the related art;
FIG. 2 is a schematic diagram of a magnetron according to the related art;
FIG. 3 is a schematic diagram of a magnetron according to the related art;
FIG. 4 is a schematic diagram of a magnetron according to the related art;
FIG. 5 is a schematic diagram of evolution of a planar target and planar magnetron from a rotating target and rotating magnetron;
FIG. 6 is a schematic view of a magnetron moving in a first direction and a second direction according to an embodiment of the invention;
FIG. 7 is a graph showing the relationship among the etching depth of the target, the etching range of the target and the moving distance of the magnetron along the first direction in the embodiment of the invention;
FIG. 8 is a schematic view of a magnetron according to an embodiment of the invention;
FIG. 9 is a schematic view of the outer magnet assembly of FIG. 8;
FIG. 10 is a schematic view of the inner magnet assembly of FIG. 8;
FIG. 11 is a cross-sectional view taken along the direction A-A in FIG. 8;
FIG. 12 is a schematic view of magnetic induction lines applied to a target by the inner magnet, the outer magnet, and the intermediate magnet of FIG. 11;
FIG. 13 is a graph showing the relationship among the distance of movement of the magnetron in the second direction, the distance from the edge of the target, and the length of plasma passing through per unit size of the target in an embodiment of the invention;
fig. 14 is a graph showing the relationship between the weakening coefficient of the magnetic field intensity applied to the target by the arc portion, the moving distance of the magnetron along the second direction and the etching depth in the embodiment of the invention.
Reference numerals:
the flat sputtering apparatus 20, the vacuum chamber 22, the pedestal 24, the substrate 26, the planar target 28, the insulating plate 30, the backing plate 32, the backing plate 34, the insulating plate 36, the plasma 38, the linear magnetron 40, the intermediate magnetic pole 42, the outer magnetic pole 44, the gap 46, the linear portion 48, the semicircular portion 50, the magnetron 52, the plasma closed loop 54, the magnetron 56, the plasma closed loop 58, the magnetron 60, the outer magnet assembly 70, the outer linear unit 72, the outer arc unit 74, the outer magnet 76, the outer magnet 78, the inner magnet assembly 80, the inner linear unit 82, the inner arc unit 84, the inner magnet 86, the inner magnet 88, the intermediate magnet assembly 90, the intermediate magnet 92, the intermediate magnet 94, the linear portion 100, the arc 110.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the orientation is referred to merely for purposes of describing the present invention and is not intended to indicate or imply that the apparatus or elements referred to must be in a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention.
In the description of the present invention, the plural means that more than two are used for distinguishing technical features if the first and second are described only, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, mounting, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in connection with the specific contents of the technical scheme.
In the description of the present invention, reference to the term "one embodiment," "some embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
For convenience of understanding, first, the general principle of magnetron sputtering is described with reference to fig. 1, argon is introduced into the vacuum chamber during sputtering, the linear magnetron 40 generates a magnetic field, the negative power supply pressure applied to the planar target 28 is used for generating an electric field, electrons move from the planar target 28 to the substrate 26 under the action of the electric field, collide with argon atoms in the moving process to ionize the electrons to generate argon ions and new electrons, the argon ions fly to the planar target 28 under the action of the electric field in an accelerating manner, bombard the surface of the target to sputter the target, sputtered target particles deposit on the surface of the substrate 26 to form a film, and electrons generated during sputtering are used for forming and maintaining the plasma 38 on the surface of the target, so that the ionization and bombardment processes of argon can be repeated, and continuous magnetron sputtering film deposition can be realized.
Referring to fig. 2, when the magnetic field strength of the magnetic pole 42 is the same as that of the outer magnetic pole 44, the magnetic field strength at the center line of the gap 46 is the strongest, and thus the density of the correspondingly formed plasma is the highest, the distribution rule of the actual plasma density is approximately a normal distribution with the center line of the gap as a symmetry line, that is, the density of the plasma length at the center line is the highest, the closer to the magnetic poles on both sides, the lower the plasma density, and in order to simplify understanding, the plasma is simplified to be the plasma line at the highest density, and in this simplified model, the plasma forms a racetrack-shaped closed loop. The magnetron is then divided in a rectilinear direction (here named second direction) into a plurality of equal units, one unit being identified by two broken lines, it being noted that the length of each unit can be adjusted. In the straight line portion, each unit includes a plasma parallel to the straight line direction, and defines the length of the plasma included in each unit of the straight line portion 48 as 1 unit (which actually includes the sum of the lengths of the left and right plasma segments), but in the semicircular portion 50, the length of the plasma in each unit rises sharply, approaching 5 units at the apex of the arc portion, and the plasma at the apex of the arc portion has been substantially parallel to the scanning direction of the magnetron (which is designated herein as the first direction), when the magnetron scans in the first direction, the linear portion 48 is observed with a certain vertical cross section on the target material parallel to the second direction, and the plasma is relatively short in length and perpendicular to the scanning direction, and thus the plasma passing in unit time is relatively small in etching amount of the vertical cross section, whereas in the semicircular portion 50, the plasma length is relatively long and there is an angle between the tangent of the plasma and the scanning direction, which gradually decreases to zero from the end to the apex of the arc portion, thus the plasma passes in relatively long in unit time, and the etching amount of the vertical cross section is relatively large in the etching amount of the arc portion, and the etching amount of the arc portion is relatively large in the etching amount of the arc portion, and the target material is not scraped off in the corresponding to the straight line portion, and the target material is etched more deeply when the target material is etched in the other portions than the semicircular portion 48, and the corresponding to the straight line portion is etched, and the target groove is etched more deeply when the groove is etched.
The magnetron 60 of the present embodiment can be applied to the magnetron apparatus described above, which is also an elongated linear magnetron, and the magnetron 60 can be scanned in a first direction relative to the target to achieve uniform etching of the planar target 28 and relatively high target utilization. The magnetron sputtering of the rotary target has wide application, wherein one main reason is that the target utilization rate of the rotary target is relatively high, and is generally more than 70%. It would be helpful to compare in depth the rotating target magnetron sputtering and the planar target magnetron sputtering when considering how to improve the utilization of the planar target. As shown in fig. 5, a process of expanding a general rotary magnetron and a rotary target into a planar target and a corresponding magnetron is illustrated: the rotary target is cut from the upper central position along the direction of the rotation axis, and the rotary target is flattened into a planar target. The magnetron suitable for a rotary target is similar to that of fig. 2 in that the straight line portion where the magnetic field strength is uniform is long, approaching the width of the target. Because the rotary target always rotates during magnetron sputtering, the long section in the middle of the rotary target can be etched uniformly, and only the two ends of the target corresponding to the arc parts at the two ends of the magnetron are etched relatively deeply. That is, the rectangular planar target has the same length as the rotary target, the magnetron is the same as the rotary target in length, the rectangular planar target has the same width as the rotary target or exceeds the rotary target in circumference, and the target utilization rate of the planar target should be similar to the target high utilization rate difference of the rotary target and exceed 70%. However, the rotating target is continuously rotating, and the magnetron on the planar target needs to move back and forth, so that there is less etching at the edge of the target than in the middle, and the very edge of the target is almost unetched, based on which the target utilization of the planar target is somewhat lower than that of the rotating target. In summary, the length of a planar target can be as much as the length of a racetrack magnetron, while the impact of the planar target width on the target utilization is closely related to the magnetron width. If the planar target width is very close to the magnetron width, the magnetron can only be stationary and the target utilization will be very low. When the planar target is much wider than the magnetron, the target utilization can be rapidly improved when the magnetron can be moved back and forth. In summary, referring to FIG. 6, the length of the planar target 28, i.e., the dimension of the planar target in the second direction, may be as much as the length of the magnetron 60, while the effect of the width of the planar target 28 on the target utilization is closely related to the width of the magnetron 60. If the width of the planar target 28 is very close to the width of the magnetron 60, the magnetron 60 can only be stationary and the target utilization will be very low. When the planar target 28 is much wider than the magnetron 60, the target utilization can be increased rapidly as the magnetron 60 can be moved back and forth in the first direction.
The foregoing generally describes the principle of the magnetron scanning along the first direction to improve the target utilization, and is described in detail below, referring to fig. 7, in which the Y-axis coordinate is the etching depth of the target, and for convenience of description, the etching depth at the deepest point is normalized to 1. The X-axis coordinate is the etching range along the first direction on the target, and the distance d between the center lines of the gaps at two sides in fig. 6 is normalized to 1. Curves 1 to 4 are respectively that the magnetron 60 is not moved in the first direction and is moved in the second direction 1 /2 d. Moving in a first direction 11 /12 d. The corresponding curve is shifted by 1d in the first direction.
As can be seen from curve 1 of FIG. 7, before the magnetron 60 has been scanned, the left and right peaks of the etching depth of the target correspond to the center line of the left gap 46 and the center line of the right gap 46, respectively, that is, where the plasma density is highest, the distance between the left and right peaks is d, and the etching total width is 1 2 / 3 d, there is a magnetic pole in the middle (right above the S pole) 1 /3 The region of d is free of any etching. As can be seen from curve 2, the magnetron 60 is moved in a first direction 1 /2 d, i.e. half the distance between the two etching peaks at the starting position, is not etched in curve 1 1 /3 d region begins to disappear and the total width of etching increases to 2 1 / 6 d. As can be seen from curve 3, the magnetron 60 is moved in a first direction 11 /12 And d, etching of the middle area is more uniform, and only a small section with the very narrow middle is slightly shallower than the deepest etching. As can be seen from curve 4, the magnetron is moved d in a first direction and the total etch width is increased to 2 2 / 3 And d, the etching of the middle section is uniform and deepest, only the etching depth of the edge areas at the two ends is shallow, the edges at the two ends are hardly etched, and the etching depth distribution is ideal from the point of view of the target utilization rate. In summary, uniform etching of the target in the middle portion can be achieved as long as the magnetron 60 moves at least the distance between the center lines of the gaps on both sides in the first direction.
However, even though the magnetron 60 improves the problem of non-uniform etching of the planar target 28 in the first direction by moving in the first direction, as described above, for the racetrack type magnetron with the arc end, the arc end of the magnetron forms deeper etching grooves at the corresponding positions of the target when the magnetron 60 moves in the first direction, that is, the movement of the magnetron 60 in the first direction deepens the non-uniform etching of the planar target 28 in the second direction, and if the magnetic field strength of the arc end is too weakened, the ignition and maintenance of the plasma are affected, and therefore, the present embodiment provides a magnetron device capable of improving the non-uniform etching of the planar target 28 in the second direction without affecting the ignition and maintenance of the plasma.
Referring to fig. 8 to 10, the magnetron apparatus includes a magnetron 60 for generating a magnetic field and a driving device for driving the magnetron 60 to move in a first direction.
The magnetron 60 includes an outer magnetic assembly 70, an inner magnetic assembly 80 and an intermediate magnetic assembly 90, wherein the outer magnetic assembly 70 is disposed around the outer side of the inner magnetic assembly 80, and the intermediate magnetic assembly 90 is disposed between the outer magnetic assembly 70 and the inner magnetic assembly 80 for enhancing the magnetic field strength of the linear portion of the magnetron 60. The outer magnetic assembly 70, the inner magnetic assembly 80 and the middle magnetic assembly 90 each include a plurality of magnets, and for convenience of distinction, the magnets included in the outer magnetic assembly 70, the inner magnetic assembly 80 and the middle magnetic assembly 90 are respectively designated as an outer magnet 76, an inner magnet 86 and a middle magnet 92, and the magnets in the outer magnetic assembly 70, the inner magnetic assembly 80 and the middle magnetic assembly 90 are symmetrically distributed with the center line of the inner linear unit 82 as a symmetrical axis.
As shown in fig. 8 and 9, the outer magnetic assembly 70 includes an outer straight unit 72 and an outer arc unit 74 connected to an end of the outer straight unit 72, wherein the outer straight unit 72 includes a plurality of outer magnets 76, and the plurality of outer magnets 76 are sequentially arranged in the second direction. The outer arc unit 74 is configured in an arc structure, specifically, an arc structure, and the outer arc unit 74 may include an integral arc-shaped outer magnet 78, or may include a plurality of outer magnets 78 distributed along an arc.
As shown in fig. 8 and 10, the inner magnetic assembly 80 includes an inner linear unit 82, and in some embodiments, the inner magnetic assembly 80 further includes an inner arc unit 84, and when the inner arc unit 84 is provided, the inner arc unit 84 is connected to an end of the inner linear unit 82, wherein the inner linear unit 82 includes a plurality of inner magnets 86, and the plurality of inner magnets 86 are sequentially arranged along the second direction. The inner arc unit 84 is configured in an arc structure, specifically, in an arc structure, and the inner arc unit 84 may include an integral arc-shaped inner magnet 88, or may include a plurality of inner magnets 88 distributed along an arc.
The outer linear units 72 are provided in two, the two outer linear units 72 are disposed in parallel on opposite sides of the inner linear unit 82, the outer linear units 72 are disposed at intervals from the inner linear unit 82 so as to form a gap, and in the illustrated embodiment, the two outer linear units 72 are disposed symmetrically with respect to the inner linear unit 82. Both ends of the outer arc-shaped units 74 are connected to the same ends of the outer straight units 72.
In this embodiment, referring to FIG. 8, at least the outer linear element 72 of the outer magnetic assembly 70, the inner linear element 82 of the inner magnetic assembly 80, and the intermediate linear element of the intermediate magnetic assembly 90 form a linear portion 100, and in some embodiments, the outer arcuate element 74 and the inner arcuate element 84 cooperate to form an arcuate portion 110. Referring to fig. 11, the magnetic pole lines of the outer magnet 76 and the inner magnet 86 are perpendicular to the target mounting device and have opposite polarities, specifically, the S pole of the inner magnet 86 faces the planar target 28, the N pole is away from the planar target 28, the N pole of the outer magnet 76 faces the planar target 28, the S pole is away from the planar target 28, and the magnetic pole lines are all disposed in the vertical direction as shown. For the intermediate magnet assembly 90, the respective magnetic pole lines of the intermediate magnet 92 and the intermediate magnet 94 are parallel to the target mounting means, i.e., are disposed in the horizontal direction as shown, and the two magnetic poles of the intermediate magnet 92 face the outer linear unit 72 and the inner linear unit 82, respectively, the outer magnetic poles of the intermediate magnet 92, the intermediate magnet 94 coincide with the magnetic poles of the outer magnet 76, the outer magnet 78 face the planar target 28, and the inner magnetic poles of the intermediate magnet 92, the intermediate magnet 94 coincide with the magnetic poles of the inner magnet 86, the inner magnet 88 face the planar target 28. Specifically, one magnetic pole (for example, N pole) of the intermediate magnet 92 faces the outer magnet 76, the other magnetic pole (for example, S pole) faces the inner magnet 86, the magnetic induction lines of the outer magnet 76, the inner magnet 86 and the intermediate magnet 92 are distributed as shown in fig. 12, and as can be seen from the figure, the magnetic induction lines of the outer magnet 76 and the inner magnet 86 are strongest at the center line of the gap, and as such, the magnetic induction lines of the intermediate magnet 92 are strongest at the center line of the gap, and the magnetic field strength of the straight line portion 100 can be increased after superposition, so that the maximum magnetic field strength of the straight line portion 100 applied to the planar target 28 is greater than the maximum magnetic field strength of the arc portion 110 applied to the planar target 28, the difference of etching capability between the arc portion 110 and the straight line portion 100 can be reduced, and the etching capability is improved, and therefore, the present embodiment can eliminate the need to reduce the magnetic field strength of the arc portion 110 applied to the planar target 28, or reduce the amplitude of the decrease, thereby ensuring the maintenance of plasma during ignition and sputtering.
It should be noted that, taking the straight line portion 100 as an example, when the present invention describes the maximum magnetic field intensity applied to the planar target 28 by the straight line portion 100, it should not be understood that there is necessarily a gradient of the magnetic field variation in the straight line portion 100, in other words, the magnetic field intensity of the straight line portion 100 may be balanced, for example, the magnetic field intensity applied to the planar target 28 by each portion of the straight line portion 100 along the second direction is the maximum magnetic field intensity.
In some embodiments, referring to FIG. 8, in which the dashed lines represent the magnetron 60 moved to different positions in a first direction and a second direction, in addition to movement in the first direction, the drive means is also used to drive the magnetron 60 to reciprocate in the second direction relative to the planar target 28 to further effect uniform etching of the planar target 28 in the second direction, in principle by: if the magnetron 60 is fixed along the second direction, when the magnetron 60 moves along the first direction, the portion (vertex portion) with the strongest etching capability on the arc portion 110 will always move along the straight line parallel to the first direction, so that a very deep etching groove is formed in the corresponding region of the planar target 28, and when the magnetron 60 moves along the second direction, the portion with the strongest etching capability on the arc portion 110 will not always move along the straight line, the etching amount of the corresponding region is reduced, the etching amount increment of other regions is reduced, the maximum etching depth is reduced as a whole, the etching is more uniform, and the uniform etching of the target can be further realized by combining the differential arrangement of the magnetic field intensity applied to the target between the arc portion 110 and the straight line portion 100.
It should be noted that, if the magnetron 60 does not move in the second direction, in order to ensure full-area etching of the target in the second direction, the dimension of the magnetron 60 in the second direction (for convenience of explanation, the length of the magnetron 60 is defined) may be equal to or slightly longer than the dimension of the planar target 28 in the second direction (for convenience of explanation, the width of the planar target 28 is defined), that is, the magnetron 60 may be located at a distance beyond the edge of the planar target 28, within which sputtering can normally be performed, beyond which the magnetron cannot confine electrons to the surface of the planar target 28, and the plasma cannot be effectively maintained, resulting in interruption of sputtering, which varies depending on the planar target 28 and the magnetron 60, but is generally smaller. Based on this, if the magnetron 60 is moved in the second direction, the length of the magnetron 60 needs to be smaller than the width of the planar target 28 so that the magnetron 60 has a sufficient moving space in the second direction while ensuring the sputtering process to be continued, and it can be understood that the longer the distance the magnetron 60 is moved in the second direction, the shorter the length of the magnetron 60.
Referring to fig. 13, which shows the relationship between the distance of movement of the magnetron 60 in the second direction, the distance from the edge of the planar target 28, and the length of the plasma swept in the first direction per unit size, the longer the length of the plasma swept, the greater the etching capability, the deeper the etched trench is formed, assuming that the magnetic field strength of the straight portion 100 is the same as that of the arcuate portion 110. The Y-axis coordinate is the length of the plasma swept in the first direction by the planar target 28 per unit dimension, and for ease of illustration, the length of the plasma swept in the first direction by the linear portion 100 is normalized to 1 per unit dimension by the planar target 28 as the magnetron 60 is moved in the first direction. The X-axis coordinate is the distance from the edge of the target, where the edge is the edge parallel to the first direction. Curves 1 to 5 are respectively that the magnetron 60 is not moved in the second direction and is moved in the second direction 1 /6 d. Moving in a second direction 1 /3 d. Moving in a second direction 2 /3 d and move 1 in the second direction 1 / 4 d corresponds to a curve.
As shown in curve 1 of fig. 13, when the magnetron 60 is fixed in the second direction, the peak of the curve is the highest (the peak is near the Y-axis value 5), which also means that when the magnetron 60 is scanned in the first direction, the plasma swept in a unit size at the position corresponding to the peak on the planar target 28 is the longest, and thus the etching depth is the greatest, and then decays to 1 in an extremely short distance, and thus the target has a problem of relatively serious etching unevenness. As can be seen in connection with curve 2, when the magnetron 60 is moved in the second direction, the peak of the curve is significantly reduced (the peak is near the Y-axis value 2), the etch depth at the location on the planar target 28 corresponding to the peak is significantly reduced, and the curve transitions from being able to be more gradual to 1, so that the etch is already relatively uniform.
It should be noted that, as the moving distance of the magnetron 60 in the second direction is longer, the etching depth of the position corresponding to the peak on the planar target 28 is correspondingly reduced, and it can be seen from the figure that as the moving distance in the second direction is increased, the height of the peak representing the maximum etching depth is correspondingly reduced, which is advantageous for uniformity of the planar target 28. However, in order to avoid that the magnetron 60 does not move beyond the edge of the planar target 28 by a certain distance, the longer the magnetron 60 moves along the second direction, the shorter the length of the magnetron 60 along the second direction, the shorter the total time that the end region of the planar target 28 is effectively etched, resulting in the problem that the end region is too shallow to be etched, as shown in fig. 13, in each curve representing the movement of the magnetron 60 along the second direction, which has a rising section rising from a position lower than the Y-axis value 1 to a peak, the length of the plasma of the unit size of the arc 110 sweeping the planar target 28 is smaller than the plasma length corresponding to the straight line portion 100, which also causes the problem of uneven etching, and the longer the moving distance, the larger the range, in summary, the following can be concluded: as the moving distance of the magnetron 60 in the second direction increases, the maximum etching depth of the planar target 28 in the second direction gradually decreases, but the area of the edge region of the target material with insufficient etching gradually increases, based on this, the moving distance L (as shown in fig. 6) of the magnetron 60 in the second direction is further limited, and when the magnetron 60 moves within the selected range, the maximum etching depth of the arc portion 110 formed on the planar target 28 and the extension range of the area with insufficient etching can be considered, so that the utilization rate of the planar target 28 is improved, specifically, the moving distance L of the magnetron 60 satisfies: l is more than or equal to 0.5d and less than or equal to 2d.
In the foregoing, it was explained how the magnetron 60 improves the problem of etching unevenness by moving in the second direction, and next, how the magnetron 60 reduces the difference in magnetic field strength between the straight line portion 100 and the arc portion 110 by moving in the second direction when the magnetic field strength between the straight line portion 100 and the arc portion 110 is not uniform. Referring to fig. 14, there is shown a relationship between a weakening coefficient of the magnetic field intensity applied to the target by the arc portion 110, a moving distance of the magnetron 60 in the second direction, and an etching depth, wherein a Y-axis coordinate is a maximum etching depth of the target, which is generally formed at a portion corresponding to the arc portion, and for convenience of explanation, a depth of the etching groove corresponding to the straight portion 100 is normalized to 1, and a depth of the etching groove corresponding to the straight portion 100 is relatively uniform, so that a curve (not shown in fig. 14) corresponding to the straight portion 100 is a horizontal line parallel to the X-axis and corresponding to a Y-axis number of 1. The X-axis coordinate is a weakening coefficient of the magnetic field strength applied by the arc portion to the target material, and can be understood as a strengthening coefficient of the straight line portion 100, where if the magnetic field strength is not weakened, the corresponding X-axis value is 1, and correspondingly, an X-axis value of 0.8 means that the magnetic field strength applied by the arc portion 110 to the target material is weakened to 80%, and other values are similar. Curves 1 to 5 are respectively that the magnetron 60 is not moved in the second direction and is moved in the second direction 1 /6 d. Moving in a second direction 1 /3 d. Moving in a second direction 2 /3 d and move 1 in the second direction 1 / 4 d corresponds to a curve. The etching degree and the magnetic field strength of the planar target 28 are actuallyThe above is not a strict proportional relationship, and the relationship between the etching degree of the planar target 28 and the magnetic field strength is defined as a 1:1 proportional relationship for ease of understanding.
As can be seen in connection with curve 1, if the magnetron 60 is not moved in the second direction and the magnetic field strength is not reduced, the maximum etch depth formed by the arcuate portion 110 on the planar target 28 after the magnetron 60 is scanned in the first direction will be approximately 5 times the maximum etch depth corresponding to the linear portion 100, which will greatly affect the uniformity of the target etch. On the other hand, if the magnetron 60 is not moved in the second direction, when the magnetic field strength is reduced to about 20%, although the maximum etching depth corresponding to the arc portion 110 is about equal to the maximum etching depth corresponding to the straight portion 100, the magnetic field strength of the arc portion 110 will affect the ignition and maintenance of plasma at this time, and if it is understood at the angle that the magnetic field strength of the straight portion 100 is increased, the curve 1 represents that the magnetic field strength of the straight portion 100 needs to be increased by about 5 times to be about equal to the magnetic field strength of the arc portion 110, which may be more demanding for the intermediate magnetic assembly 90. As can be seen in connection with curve 2, when the magnetron 60 is moved in the second direction, even though the magnetic field strength of the arc portion 110 is not weakened, the difference in maximum etching depth between the arc portion 110 and the straight portion 100 is significantly reduced, and when the magnetic field strength of the arc portion 110 is weakened, the difference in maximum etching depth between the arc portion 110 and the straight portion 100 is further reduced, for example, as can be seen from curve 2, when the magnetic field strength is weakened to 40% (instead of 20% of curve 1), the maximum etching depth corresponding to the arc portion 110 is already approximately equal to the maximum etching depth corresponding to the straight portion 100. As can be seen from the combination of the curves 2 to 5, as the distance of the magnetron 60 moving in the second direction increases, the degree of decrease in the magnetic field intensity of the arc portion 110 may be correspondingly reduced, or the degree of increase in the magnetic field intensity of the straight portion 100 may be correspondingly reduced, in other words, when the magnetron 60 moves in the second direction, the magnetic field intensity of the arc portion 110 may be reduced within a range that does not affect the ignition and maintenance of plasma, and at this time, the magnetic field intensity of the straight portion 100 may be correspondingly reduced, thereby reducing the requirement for the magnetic field intensity of the intermediate magnetic assembly 90, or the magnetic field intensity of the arc portion 110 may not be reduced, but the difference in etching capability between the two may be adjusted entirely by increasing the magnetic field intensity of the straight portion 100, however, even so, the requirement for the magnetic field intensity of the straight portion 100 is significantly reduced as compared with the case where the magnetron 60 is fixed in the second direction.
In some embodiments, referring to fig. 8 and 9, in some embodiments, the ends of the outer linear units 72 include multiple sets of outer magnets 76, and in the direction from the outer linear units 72 to the outer arc units 74 (for example, from bottom to top in fig. 8 and 9), the magnetic field strength applied by each set of outer magnets 76 to the target decreases sequentially, and the maximum magnetic field strength applied by the outer arc units 74 to the target is not greater than the magnetic field strength applied by the outer magnets 76 of the end-most set, so that abrupt changes in magnetic field strength can be avoided, and in addition, the magnetic fields applied by adjacent magnets to the target overlap to increase the strength, and the above arrangement can also avoid excessive lifting of the magnetic field strength due to overlapping of the outer arc units 74 with the adjacent outer magnets 76, and affect the differential arrangement of the magnetic field strength between the outer linear units 72 and the outer arc units 74.
It should be noted that, the number of the outer magnets 76 included in each set is not limited in this embodiment, and the number of the inner and outer magnets 76 in different sets may be equal or unequal, and one set of outer magnets 76 includes at least one outer magnet 76, and the end of the outer linear unit 72 includes three sets of outer magnets 76, each set including one outer magnet 76, as illustrated in the drawing.
In some embodiments, when the end of the outer linear unit 72 includes multiple sets of outer magnets 76, the magnetic field strength applied by the magnets to the target may be adjusted by adjusting the magnetic field strength of the magnets themselves, for example, the cross-sectional area of each set of outer magnets 76 parallel to the target mounting device decreases in sequence along the direction from the outer linear unit 72 to the outer arc unit 74, so that, if other parameters remain the same, the magnetic field strength of each set of outer magnets 76 decreases in sequence, and thus the magnetic field strength applied to the target decreases in sequence. As shown in fig. 8 and 9, the width of each set of the outer magnets 76 is gradually reduced so that the sectional area of each set of the outer magnets 76 is sequentially reduced.
For another example, the heights of the sets of outer magnets 76 decrease in sequence along the direction from the outer straight line element 72 to the outer arc element 74, and as such, the magnetic field strength of the sets of outer magnets 76 decreases in sequence when other parameters remain the same, and the magnetic field strength applied to the target decreases in sequence.
For another example, in the direction from the outer straight line unit 72 to the outer arc unit 74, the outer magnet 76 of each group is made of a different material with sequentially reduced magnetic field strength, so that, if other parameters are kept the same, the magnetic field strength of the outer magnet 76 of each group is also sequentially reduced, and thus the magnetic field strength applied to the target is also sequentially reduced.
In other embodiments, when the end of the outer linear unit 72 includes multiple sets of outer magnets 76, the magnetic field strength applied by the magnets to the target may also be adjusted by adjusting the distance between the magnets and the target, specifically, the distance between each set of outer magnets 76 and the target increases in sequence along the direction from the outer linear unit 72 to the outer arc unit 74, and even if the magnetic field strength of each set of outer magnets 76 is the same, the magnetic field strength applied to the target decreases in sequence.
It should be noted that the above embodiments may be combined, for example, in the direction from the outer straight line unit 72 to the outer arc unit 74, to sequentially decrease the magnetic field strength of each set of outer magnets 76, and sequentially increase the distance between each set of outer magnets 76 and the target.
When the ends of the outer linear units 72 include a plurality of sets of outer magnets 76, and the magnetic field strength applied to the target by each set of outer magnets 76 is sequentially reduced, the peak of the plasma density generated by each set of outer magnets 76 is gradually reduced, and as previously described, the plasma density is represented as a normal distribution, the density is highest at the center line of the gap 26, and then gradually reduced toward both sides in the first direction, and after reducing to a certain extent, the etching capability of the plasma is insufficient, in other words, the planar target 28 can be effectively etched (which is defined as an effective etching region for convenience of explanation) only if the plasma extending from the portion having the highest density to both sides to a certain extent, and if the peak of the plasma density is reduced, the width of the effective etching region is also reduced, so that when the outer linear units 72 are moved to the limit position in the first direction to reach the edge of the planar target 28 parallel to the second direction, the portion of the edge area of the planar target 28 that would otherwise be swept by the plasma (the edge area corresponding to the end sets of outer magnets 76) would not be effectively etched, and based on this, in some embodiments, referring to fig. 8 and 10, the ends of the inner linear units 82 include sets of inner magnets 86 disposed corresponding to the sets of outer magnets, each set of inner magnets 86 facing the end of the corresponding outer magnet 76 in the direction from the outer linear unit 72 to the outer arcuate unit 74, and the distance h from the centerline of the inner linear unit 82 increases in sequence, such that the effective etching area corresponding to the sets of outer magnets 76 is offset outwardly, such that when the outer linear unit 72 moves in the first direction to the extreme position to reach the edge of the planar target 28, the entire edge area is effectively etched, thereby achieving full area etching of planar target 28.
It should be noted that, the present embodiment is not limited to the number of the inner magnets 86 included in each group, and the number of the inner magnets 86 in different groups may be equal or unequal, and one group of the inner magnets 86 includes at least one inner magnet 86, and the end of the inner linear unit 82 includes three groups of the inner magnets 86, each group including one inner magnet 86, as illustrated in the drawing.
As an option to implement the above-described embodiment, referring to fig. 8 to 10, the inside magnetic assembly 80 further includes an inside arc-shaped unit 84, and the inside arc-shaped unit 84 and the outside arc-shaped unit 74 described above form an arc-shaped portion 110, and the inside arc-shaped unit 84 and the outside arc-shaped unit 74 are disposed concentrically.
Referring to fig. 10, the end (e.g., upper end in the drawing) of the inner linear unit 82 toward the inner arc unit 84 includes two inner magnet arrays, each of which includes a plurality of sets of inner magnets 86, one ends of the two inner magnet arrays are connected to the main body portion of the inner linear unit 82, the other ends are connected to the inner arc unit 84, and the distance between the two inner magnet arrays increases in sequence in the direction from the inner linear unit 82 to the inner arc unit 84, so that the end of the inner linear unit 82 assumes a gradually expanding state such that the distance h between the end of each set of inner magnets 86 toward the corresponding outer magnet 76 and the center line of the inner linear unit 82 increases in sequence.
In some embodiments, referring to fig. 9, the outer sides of the magnets in the outer arc-shaped units 74 are flush, i.e., the outer sides of the sets of outer magnets 76 at the ends are flush with the outer sides of the outer magnets 76 of the main body portion of the outer arc-shaped units 74, and when the sets of outer magnets 76 at the ends adjust the magnetic field strength by decreasing the width as shown in the figures, the effective etching area is biased to the outside, thereby performing full-area etching of the planar target 28 when the outer linear units 72 move to the extreme positions in the first direction to reach the edge of the planar target 28.
In some embodiments, referring to fig. 8, the length of the middle linear element is shorter than the length of the outer linear element 72, such that the ends of the outer linear element 72 can extend beyond the middle linear element in the second direction, the extending portions including the aforementioned plurality of sets of outer magnets 76, while the outer arc element 74 applies a magnetic field strength to the target that is no greater than the magnetic field strength applied by the endmost set of outer magnets 76, such that the middle portion of the linear element 100 has a longer magnetic field that tapers from the ends and transitions to the arc 110, thereby balancing the gap in etching capability between the linear element 100 and the arc 110, and avoiding the decrease in the magnetic field strength of the outer arc element 74 that affects plasma ignition and maintenance.
As described above, the arc 110 has the strongest etching capability during scanning, and thus the deepest etching groove is formed, and therefore, in some embodiments, the magnetic field strength applied by the arc 110 to the target may be sequentially reduced, so as to reduce the difference in etching capability between portions of the arc 110. Specifically, the arc portion 110 includes the outer arc unit 74 configured as the arc structure, and along the direction from the end to the vertex of the arc portion 110, the outer arc unit 74 includes multiple groups of the outer magnets 76, and the magnetic field strength applied to the target by the multiple groups of the outer magnets 76 decreases sequentially.
It should be noted that, the number of the external magnets included in each set is not limited in this embodiment, and the number of the internal and external magnets in different sets may be equal or unequal, and one set of external magnets includes at least one external magnet.
In some embodiments, when the ends of the outer arc units 74 include multiple sets of outer magnets, the magnetic field strength applied by the magnets to the target may be adjusted by adjusting the magnetic field strength of the magnets themselves, for example, the cross-sectional area of each set of outer magnets 76 parallel to the target mounting device decreases in sequence along the direction from the end to the apex of the arc 110, so that, with other parameters remaining the same, the magnetic field strength of each set of outer magnets 76 decreases in sequence, and thus the magnetic field strength applied to the target decreases in sequence. In some embodiments, the width of each set of outer magnets 76 is tapered such that the cross-sectional area of each set of outer magnets 76 is sequentially reduced.
For another example, the heights of the respective sets of external magnets 76 decrease in the direction from the end to the apex of the arc-shaped portion 110, and thus, when other parameters are kept uniform, the magnetic field strengths of the respective sets of external magnets 76 decrease in order, and the magnetic field strength applied to the target decreases in order.
For another example, in the direction from the end to the apex of the arc-shaped portion 110, each set of outer magnets 76 is made of a different material whose magnetic field strength is sequentially reduced, and thus, when other parameters are kept uniform, the magnetic field strength of each set of outer magnets 76 is sequentially reduced, and thus, the magnetic field strength applied to the target is also sequentially reduced.
In other embodiments, when the ends of the outer arc units 74 include multiple sets of outer magnets 76, the magnetic field strength applied by the magnets to the target may also be adjusted by adjusting the distance between the magnets and the target, specifically, the distance between each set of outer magnets 76 and the target mounting device increases in sequence along the direction from the end to the apex of the arc 110, and even if the magnetic field strength of each set of outer magnets 76 is the same, the magnetic field strength applied to the target decreases in sequence.
It should be noted that the above embodiments may be combined, for example, in a direction from the end to the apex of the arc portion 110, to sequentially decrease the magnetic field strength of each set of the external magnets 76, and to sequentially increase the distance between each set of the external magnets 76 and the target mounting apparatus.
The present invention also proposes a magnetron sputtering apparatus suitable for planar targets, as understood with reference to fig. 1, comprising a vacuum chamber 22, a base 24, a target mounting means for securing a planar target 28 within the vacuum chamber 22, which may be an insulating plate 30 and an insulating plate 36 as described above, and a magnetic control means of the foregoing embodiments, the base 24 being used to secure a substrate within the vacuum chamber 22 for depositing a film layer thereon.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.
Claims (9)
1. Magnetron apparatus for PVD planar targets, characterized in that it comprises:
the magnetron comprises an outer magnetic component, an inner magnetic component and an intermediate magnetic component, wherein the polarity of the outer magnetic component is opposite to that of the inner magnetic component, the outer magnetic component comprises an outer linear unit and an outer arc-shaped unit connected with the end part of the outer linear unit, the inner magnetic component comprises an inner linear unit, the intermediate magnetic component comprises an intermediate linear unit, the outer linear unit is arranged at intervals on two opposite sides of the inner linear unit along a first direction, the intermediate linear unit is arranged in a gap between the outer linear unit and the inner linear unit, the outer linear unit, the inner linear unit and the intermediate linear unit comprise a plurality of magnets distributed along a second direction, the magnets in the outer straight line unit, the inner straight line unit and the middle straight line unit are symmetrically distributed by taking the central line of the inner straight line unit as a symmetrical axis, the first direction is perpendicular to the straight line direction of the inner straight line unit, the second direction is parallel to the straight line direction of the inner straight line unit, the magnetic pole connecting line of the magnets in the outer straight line unit and the magnetic pole connecting line of the magnets in the inner straight line unit are perpendicular to a plane target, the magnetic pole connecting line of the magnets in the middle straight line unit is parallel to the plane target, the two magnetic poles of the magnets in the middle straight line unit face the outer straight line unit and the inner straight line unit respectively, the outer magnetic poles of the magnets in the middle straight line unit are consistent with the magnetic poles of the magnets in the outer magnetic component face the plane target, the inner magnetic pole of the magnet in the middle straight line unit is consistent with the magnetic pole of the magnet in the inner magnetic assembly facing the plane target;
A driving device for driving the magnetron to reciprocate along the first direction;
wherein at least the outer straight line unit, the inner straight line unit and the middle straight line unit form a straight line part, at least the outer arc unit forms an arc part, and the maximum magnetic field intensity applied by the straight line part to the planar target is larger than the maximum magnetic field intensity applied by the arc part to the planar target;
the end part of the outer straight line unit, which faces the outer arc unit, comprises a plurality of groups of outer magnets, the magnetic field intensity applied to the planar target by each group of outer magnets is sequentially reduced along the direction from the outer straight line unit to the outer arc unit, and the maximum magnetic field intensity applied to the planar target by the arc part is not more than the magnetic field intensity applied to the planar target by the outer magnet of the end-most group.
2. Magnetron apparatus for PVD planar targets according to claim 1 wherein the drive means is at least for driving the magnetron to reciprocate in the second direction relative to the planar target.
3. Magnetron apparatus for PVD planar targets according to claim 1, wherein the outer straight line unit comprises at least one of the following:
The cross-sectional areas of the outer magnets of each group, which are parallel to the planar target, are sequentially reduced;
the heights of the outer magnets of each group are sequentially reduced;
the intervals between the outer magnets and the planar targets of each group are sequentially increased;
each group of the outer magnets is made of different materials with sequentially weakened magnetic field intensity.
4. The magnetron apparatus for PVD planar targets according to claim 1, wherein an end of the inner linear unit facing the arc portion includes a plurality of sets of inner magnets provided corresponding to a plurality of sets of the outer magnets, and distances between the inner magnets of each set and a center line of the inner linear unit sequentially increase toward the end corresponding to the outer magnets in a direction from the inner linear unit to the arc portion.
5. The magnetron apparatus of claim 4 wherein the inner magnet assembly further comprises an inner arc unit, the outer arc unit and the inner arc unit forming the arc, an end of the inner straight line unit facing the arc comprising two inner magnet arrays, each inner magnet array comprising a plurality of sets of the inner magnets, the inner arc unit being connected to ends of the two inner magnet arrays;
And the distance between the two inner magnet arrays is sequentially increased along the direction from the inner linear unit to the arc-shaped part.
6. The magnetron apparatus for PVD planar targets of claim 1 wherein the outer side of each magnet in the outer arcuate unit is flush.
7. Magnetron apparatus for PVD planar targets according to claim 1 wherein the length of the outer linear units is longer than the length of the intermediate linear units so that the ends of the outer linear units can extend beyond the intermediate linear units in the second direction, and the excess portions of the outer linear units are provided with a plurality of sets of the outer magnets.
8. The magnetron apparatus as claimed in claim 1, wherein the outer arc unit includes a plurality of sets of outer magnets, and the magnetic field intensity applied to the planar target by each set of outer magnets is sequentially reduced in a direction from an end to an apex of the arc.
9. Magnetron sputtering equipment, characterized by comprising:
a vacuum chamber;
a magnetron apparatus for PVD planar targets according to any of claims 1 to 8;
the target mounting device is used for fixing the planar target in the vacuum chamber;
And the base station is used for fixing the substrate in the vacuum chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310083001.6A CN116190180B (en) | 2023-01-16 | 2023-01-16 | Magnetron device for PVD planar target and magnetron sputtering equipment |
| PCT/CN2023/096868 WO2024152498A1 (en) | 2023-01-16 | 2023-05-29 | Magnetron tube apparatus for pvd planar target, and magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310083001.6A CN116190180B (en) | 2023-01-16 | 2023-01-16 | Magnetron device for PVD planar target and magnetron sputtering equipment |
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| Publication Number | Publication Date |
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| CN116190180A CN116190180A (en) | 2023-05-30 |
| CN116190180B true CN116190180B (en) | 2024-01-30 |
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| CN202310083001.6A Active CN116190180B (en) | 2023-01-16 | 2023-01-16 | Magnetron device for PVD planar target and magnetron sputtering equipment |
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| Country | Link |
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| CN (1) | CN116190180B (en) |
| WO (1) | WO2024152498A1 (en) |
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| JPH05179440A (en) * | 1992-01-07 | 1993-07-20 | Ube Ind Ltd | Cathode for magnetron sputtering |
| JP2007126722A (en) * | 2005-11-04 | 2007-05-24 | Shin Meiwa Ind Co Ltd | Magnet structure for magnetron sputtering system, cathode electrode unit, and magnetron sputtering system |
| US8016982B2 (en) * | 2007-11-30 | 2011-09-13 | Panasonic Corporation | Sputtering apparatus and sputtering method |
| US8500962B2 (en) * | 2008-07-21 | 2013-08-06 | Ascentool Inc | Deposition system and methods having improved material utilization |
| US9218945B2 (en) * | 2011-12-12 | 2015-12-22 | Apollo Precision Beijing Limited | Magnetron with gradually increasing magnetic field out of turnarounds |
| CN110791742A (en) * | 2019-12-20 | 2020-02-14 | 横店集团东磁股份有限公司 | Magnetic source structure of magnetron sputtering cathode and method for adjusting magnetic field by using magnetic source structure |
| CN116092899B (en) * | 2023-01-16 | 2024-01-09 | 深圳市矩阵多元科技有限公司 | Scanning magnetron device for PVD planar target and magnetron sputtering equipment |
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| JP2001073134A (en) * | 1999-07-06 | 2001-03-21 | Applied Materials Inc | Sputtering system and film forming method |
| JP2009149973A (en) * | 2007-11-30 | 2009-07-09 | Panasonic Corp | Sputtering apparatus and sputtering method |
| CN103046009A (en) * | 2011-10-13 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Plane magnetron sputtering cathode |
| JP2015147955A (en) * | 2014-02-05 | 2015-08-20 | 日立金属株式会社 | Magnetic field generation device for magnetron sputtering |
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| WO2024152498A1 (en) | 2024-07-25 |
| CN116190180A (en) | 2023-05-30 |
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