WO2018119600A1

WO2018119600A1 - Magnetron sputtering cathode system

Info

Publication number: WO2018119600A1
Application number: PCT/CN2016/112183
Authority: WO
Inventors: 王三军
Original assignee: 深圳市柔宇科技有限公司
Priority date: 2016-12-26
Filing date: 2016-12-26
Publication date: 2018-07-05
Also published as: CN107995932A; CN107995932B

Abstract

Provided is a magnetron sputtering cathode system, comprising an annular target and a magnetic component rotatably disposed within the annular target. The magnetic component has magnetic field lines passing through the annular target. The magnetic component is movable with respect to the target, and a change of the magnetic field lines formed by the magnetic component on a surface of the target prevents the fringing effect caused by a constant magnetic field on the target, thus reducing local damage of the target and improving coating quality.

Description

Magnetron sputtering cathode system

Technical field

The invention relates to the field of sputter coating, in particular to a magnetron sputtering cathode system.

Background technique

In the current magnetron sputtering cathode system, the target material has a boundary effect under a fixed magnetic field, and the loss is uneven, which affects the coating quality.

Summary of the invention

The present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the present invention proposes a magnetron sputtering cathode system.

The magnetron sputtering cathode system of the embodiment of the invention comprises:

Circular target; and

A magnetic assembly disposed within the annular target is rotated, the magnetic field lines of the magnetic assembly passing through the annular target.

In the embodiment of the present invention, the magnetic component moves relative to the target, and the magnetic field line formed on the surface of the magnetic component changes, thereby avoiding the boundary effect of the target under the action of the fixed magnetic field, reducing the local loss of the target, and improving The quality of the coating.

In certain embodiments, the annular target is annular, square or triangular.

In certain embodiments, the magnetic component includes a magnetic component that includes a plurality of E-shaped magnetic elements or U-shaped magnet elements stacked along an axial direction of the annular target.

In certain embodiments, the magnetic element comprises a permanent magnet element and/or an electromagnetic element.

In certain embodiments, the magnetic element comprises a plurality of electromagnetic elements that operate independently.

In some embodiments, the magnetic component includes a magnetic component including a plurality of magnetic elements and a telescopic component stacked along an axial direction of the annular target, the telescopic component being fixed at one end The other end is connected to the magnetic element.

In certain embodiments, the telescoping member comprises a push rod or cylinder.

In certain embodiments, the magnetic assembly includes a rotating shaft and a magnetic member that is coupled to the spindle bearing.

In certain embodiments, the magnetic assembly further includes a telescoping member that connects the shaft and the magnetic member.

In some embodiments, the magnetron sputtering cathode system further comprises:

An annular target back tube disposed within the annular target, the magnetic assembly being disposed within the annular target back tube.

In certain embodiments, the material of the annular target back tube comprises oxygen free copper, metallic molybdenum, stainless steel or ceramic.

The additional aspects and advantages of the invention will be set forth in part in the description which follows.

DRAWINGS

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from

1 is a top plan view of a magnetron sputtering cathode system in accordance with an embodiment of the present invention.

2 is a side view of a magnetic component in accordance with an embodiment of the present invention.

The main component symbol description:

Magnetron sputtering cathode system 100;

Ring target 10, annular target back tube 12;

The magnetic component 20, the magnetic member 22, the magnetic element 222, the telescopic member 24, and the rotating shaft 26.

detailed description

Embodiments of the present invention will be further described below in conjunction with the accompanying drawings. The same or similar reference numerals in the drawings denote the same or similar elements or elements having the same or similar functions.

In addition, the embodiments of the present invention described below in conjunction with the accompanying drawings are merely illustrative of the embodiments of the invention, and are not to be construed as limiting.

Referring to FIG. 1 and FIG. 2, a magnetron sputtering cathode system 100 according to an embodiment of the present invention includes an annular target 10 and a magnetic component 20 rotatably disposed in the annular target 10. The magnetic field lines of the magnetic component 20 pass through the annular target. Material 10.

In the embodiment of the present invention, the magnetic component 20 moves relative to the annular target 10, and the magnetic field line formed by the magnetic component 20 on the surface of the annular target 10 changes, thereby avoiding the etching target of the annular target 10 under the action of a fixed magnetic field, reducing the ring shape. The local loss of the target 10 improves the quality of the coating.

Specifically, the magnetron sputtering cathode system 100 is a physical vapor deposition technique used in a sputtering coating process to prepare various materials such as metals, semiconductors, and insulators. The apparatus of the magnetron sputtering cathode system 100 is simple and easy to control, and the magnetron sputtering cathode system 100 has the advantages of large coating area and strong adhesion. The working principle of the magnetron sputtering cathode system 100 is: placing the magnetron sputtering cathode system 100 under an argon atmosphere, applying a sufficient voltage between the magnetron sputtering cathode system 100 and the anode substrate to form an electric field of a certain intensity. The electrons fly toward the substrate under the action of the electric field and collide with the argon atoms of the argon gas to ionize the argon atoms to generate argon ions and new electrons. The new electrons fly to the substrate, and the argon ions carry high energy under the electric field. The surface of the annular target 10 is bombarded to cause sputtering on the surface of the annular target 10. Neutral target atoms or molecules in the sputtered particles are deposited on the substrate to complete the coating of the substrate.

Of course, argon can also be replaced by other low pressure inert gases.

As such, the reaction environment of the magnetron sputtering cathode system 100 is easily satisfied, and the processing cost of the magnetron sputtering coating is reduced.

Magnetron sputtering has a higher deposition rate, high equipment movement, and lower pressure required for magnetron sputtering, saving energy, so magnetron sputtering is more widely used.

In addition to magnetron sputtering, the sputter coating method mainly includes three-stage sputtering, two-radio-frequency sputtering, and reactive sputtering.

Compared with magnetron sputtering, it is difficult to obtain a large-area and uniformly distributed film body in three-stage sputtering, and the ability to increase the deposition rate of the film is limited. Secondly, there is a serious grounding problem in RF sputtering; As the pressure of the reactive gas increases in the sputtering, a corresponding compound may be formed on the surface of the target, resulting in a decrease in sputtering and film deposition rate.

In some embodiments, the annular target 10 is annular, square or triangular.

Compared with the planar target used in the prior art, the annular target 10 used in the embodiment of the present invention not only occupies less space, but also makes the structure of the magnetron sputtering cathode system 100 more compact, and realizes the integration of the magnetron sputtering cathode system 100. The etch pit is formed on the local surface of the annular target 10 by the magnetic field, the utilization of the annular target 10 is improved, and the production cost of the sputter coating is reduced. At the same time, the annular target 10 adopts an annular shape, a square ring shape or a triangular ring shape, and has a simple shape and is convenient for processing.

The annular target 10 also enables target atoms that are sputtered outward from the surface of the annular target 10 to be directed toward the substrate from different directions.

In this way, the pores of the membrane are reduced, the substrate coating is dense, and the quality of the sputter coating is improved.

Further, the annular target 10 can also adopt a special shape such as an S shape or a taper according to different sputter coating requirements.

This ensures the quality of the sputter coating.

In certain embodiments, the magnetic assembly 20 includes a magnetic component 22 that includes a plurality of E-shaped magnetic elements 222 or U-shaped magnet elements 222 stacked along the axial direction of the annular target 10.

In the embodiment of the present invention, since the magnetron sputtering cathode system 100 performs high-speed sputtering under low pressure, it is necessary to effectively improve the ionization rate of argon gas or other low-pressure inert gas to ensure the quality of the sputter coating, and multiple axial stacking. The E-type magnetic element 222 or the U-shaped magnet element 222 increases the magnetic field strength of the magnetic component 20, and the charged particles are restrained by the magnetic field, so that the argon ions can carry enough energy when impacting the annular target 10 to cause the surface of the annular target 10 to occur. Sputtering avoids a decrease in the radius of the electron spiral when the magnetic field strength is small, thereby correspondingly reducing the probability of collision with the argon atoms, resulting in a decrease in the sputter deposition rate.

At the same time, the magnetic element adopts a common E-type magnetic element 222 or U-shaped element 222, and the magnetic field formed by the single magnetic element 222 can control the flight path of the argon ion, thereby avoiding the necessity of using two or more magnets when using the strip magnet. Completed the operation of magnetron sputtering to streamline the magnetron sputtering cathode The magnetic element 222 portion of the system 100 makes the entire magnetron sputtering cathode system 100 more compact, while the E-type magnetic element 222 or the U-shaped magnetic element 222 is low in cost and easy to manufacture, which facilitates production.

Further, the shape of the magnetic field should be as smooth as possible, and the magnetic field of the track should be uniformly amplified as much as possible, especially in the curved part, a wider magnetic field should be designed.

In this way, the efficiency of the sputter coating can be improved.

In certain embodiments, the magnetic element 222 includes a permanent magnet element and/or an electromagnetic element.

In the embodiment of the present invention, the magnetic element 222 can adopt a permanent magnet element. Thus, the magnetron sputtering cathode system 100 has a simple structure and does not need to supply the magnetic element 222, which saves energy and reduces production cost.

Specifically, the permanent magnet elements in the magnetron sputtering cathode system 100 may be made of ferrite and neodymium iron boron alloy.

Ferrite is sintered from iron oxide and other ingredients. It is more commonly used. The magnetic field strength of the permanent ferrite after magnetization is high, and the residual magnetic field can be maintained for a long time. The magnetic component 222 does not need to be replaced frequently, which brings processing. Convenience.

In the embodiment of the present invention, the magnetic element 222 can also adopt an electromagnetic element. Thus, the magnitude of the magnetic field strength in the magnetron sputtering cathode system 100 can be controlled by the magnitude of the current applied to the electromagnetic element, and the operation is simple and the control is convenient.

Specifically, the iron core in the electromagnetic element is made of soft iron, such as a ferrosilicon alloy and a soft ferrite. It should be noted that the iron core in the electromagnet is made of steel, which causes the electromagnetic circuit to remain magnetic after the current loop in the electromagnetic element is disconnected, and the magnetron sputtering cathode system 100 cannot be changed by changing the current of the electromagnetic component. The size of the medium magnetic field.

In the embodiment of the present invention, the magnetic element 222 can also adopt a combination of a permanent magnet element and an electromagnetic element, so that the energy saving effect can be achieved, and the magnetic field strength in the magnetron sputtering cathode system 100 can be adjusted by controlling the electromagnetic element. the size of.

In certain embodiments, the magnetic element 222 includes a plurality of electromagnetic elements that operate independently.

In the embodiment of the present invention, each electromagnetic component can be connected to a controller, and the corresponding controller can independently control the working or non-operation of the corresponding electromagnetic component, thereby controlling the magnetic field strength of the magnetron sputtering cathode system 100. It is simple and convenient, and it is necessary to stop the replacement of the magnet when the permanent magnet is used to change the magnetic field strength, which saves time for the processing and improves the equipment.

Specifically, each controller and corresponding electromagnetic component constitute a series circuit.

In this way, the circuit is simple and easy to control.

Further, in the case where the number of electromagnetic components is small, the controller may include buttons, switches, and knives, so that the cost is low, the structure is simple, and the installation is convenient;

When the number of electromagnetic components is large and the manual control is complicated, the controller may include electronic components such as contactors or relays to automatically control the electromagnetic components to work or not.

Of course, in some embodiments, the controller can also include an optoelectronic remote control or an infrared remote control, etc., so that more sensitive control of the electromagnetic component can be achieved.

In some embodiments, the magnetic assembly 20 includes a magnetic member 22 and a plurality of magnetic members 22 that are stacked along the axial direction of the annular target 10, the telescopic member 24 being fixedly disposed at one end and magnetically Element 222 is connected.

In the embodiment of the present invention, the telescopic member 24 drives the magnetic member 222 to be close to or away from the annular target 10. Accordingly, the strength and angle of the magnetic field lines formed on the surface of the annular target 10 by the magnetic member 222 are changed, thereby avoiding the magnetic member 222 being In the case where the magnetic field formed on the surface of the annular target 10 remains unchanged, an etch pit is generated on the surface of the annular target 10, the utilization of the annular target 10 is improved, and the service life of the annular target 10 is prolonged.

In certain embodiments, the telescoping member 24 includes a push rod or cylinder.

In the embodiment of the invention, the push rod has an overload protection capability and does not cause damage to the motor and the mechanical parts.

Specifically, the push rod includes a hydraulic type.

Hydraulic pushers are easy to standardize, serialize and generalize, making it easy to achieve professional mass production, which helps to improve the productivity of the putter, product quality and reduce the production cost of the putter. At the same time, the oil in the hydraulic push rod lubricates the hydraulic push rod, which can reduce the friction of the push rod and other components. Wipe, extend the life of the putter and reduce the maintenance and maintenance of the equipment.

The cylinder telescoping member 24 is generally comprised of components such as a cylinder, an end cap, a piston, a piston rod, and a seal.

The cylinder telescopic member 24 is simple and compact in structure, small in size, light in weight, and has good sealing performance of the cylinder telescopic member 24, and is not easily leaked. The cylinder telescopic component 24 has less wear during operation and has a long service life, which reduces maintenance and replacement of the equipment and reduces production costs.

In some embodiments, the magnetic assembly 20 includes a shaft 26 and a magnetic member 22 that is coupled to the shaft 26 for bearing.

In the embodiment of the invention, the bearing connection structure is simple, easy to install, and the manufacturing of the connecting bearing is relatively simple, which greatly reduces the cost of the device. In addition, the magnetic member 22 is rotatable to change the strength and angle of the magnetic field formed by the magnetic member 22 on the surface of the annular target 10, thereby preventing the fixed magnetic field on the surface of the annular target 10 from causing severe local loss to the target, and improving the ring shape. The utilization rate of the target 10.

In particular, the bearing connections are connected by an interference fit.

Thus, the magnetic member 22 and the rotating shaft 26 achieve low friction rotation, the friction loss of the rotating shaft 26 and the magnetic member 22 is further reduced, and the service life of the rotating shaft 26 is prolonged.

In certain embodiments, the magnetic assembly 20 further includes a telescoping member 24 that connects the shaft 26 and the magnetic member 22.

As such, the magnetic assembly 20 is more integrated, and the structure of the magnetron sputtering cathode system 100 is more compact and smaller, and is easier to handle.

In some embodiments, the magnetron sputtering cathode system 100 further includes:

An annular target backing tube 12 is disposed within the annular target 10 and the magnetic assembly 20 is disposed within the annular target backing tube 12.

In the embodiment of the present invention, the magnetic component 20 is located in a sealed environment inside the annular target back tube 12, and impurities are prevented from entering the magnetron sputtering cathode system 100, which affects the magnetic field generated by the magnetic component 20 or the trajectory of the argon atoms. This affects the quality of the sputter coating.

Specifically, in the embodiment of the present invention, the annular target 10 and the annular target back tube 12 are installed in the following manner: a groove of a corresponding size is machined on the surface of the annular target 10 and the annular target back tube 12, and the annular target is 10 and the annular target back tube 12 is formed with a grooved side stacked together, and the groove is filled with a lower hardness material to avoid damage to the annular target 10 and the annular target back tube 12 under vacuum conditions. The annular target 10 is hermetically welded to the annular target back tube 12, and pressure is applied to the annular target 10 and the annular target back tube 12 so that the filling material in the groove is fitted to the annular target 10 and the annular target back. In the tube 12, the annular target 10 and the annular target back tube 12 are further fixedly connected, and finally the annular target 10 and the annular target back tube 12 are subjected to heat treatment and finished processing to realize the annular target 10 and the annular target back tube 12 Fixed connection.

Correspondingly, the shape of the annular target back tube 12 can correspond to the shape of the annular target 10, and can be arranged in an annular shape, a square ring shape or a triangular ring shape. For example, when the annular target 10 is cylindrical, the annular target back tube 12 may be disposed in a cylindrical shape coaxial with the cylindrical annular target 10.

As such, the annular target back tube 12 is easier to manufacture and the production cost is greatly reduced.

In certain embodiments, the material of the annular target backing tube 12 includes oxygen free copper, metallic molybdenum, stainless steel, or ceramic.

In the embodiment of the present invention, since the oxygen-free copper has good electrical conductivity and thermal conductivity and is easy to be mechanically processed, it is a commonly used material for the annular target back tube 12. The annular target back tube 12 made of oxygen-free copper can be reused 10 times or more under the condition of proper maintenance, which greatly saves cost.

Specifically, in some embodiments, the annular target back tube 12 requires high temperature bonding, and the annular target back tube 12 is fabricated using metallic molybdenum.

In this way, the surface of the annular target back tube 12 can be prevented from being oxidized or warped;

In certain embodiments, the annular target back tube 12 is made of stainless steel.

The stainless steel has good strength and thermal conductivity. As the annular target back tube 12, it can provide good support and protection for the magnetic component 20 disposed in the annular target back tube 12, and can timely work the magnetic assembly 20 during operation. The generated heat is dissipated to avoid the excessive temperature of the magnetic component 20 affecting the magnetic field, thereby controlling the product quality of the magnetron sputtering cathode system 100. At the same time, stainless steel is inexpensive and can significantly reduce the production cost of sputter coating.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " After, "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axial", The orientation or positional relationship of the "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplified description, and does not indicate or imply the indicated device or component. It must be constructed and operated in a particular orientation, and is not to be construed as limiting the invention.

Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" and "second" may include one or more of the features either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality" is two or more unless specifically and specifically defined.

In the present invention, the terms "installation", "connected", "connected", "fixed" and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical connection, or can be electrical connection; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.

In the present invention, the first feature "on" or "under" the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact. Moreover, the first feature "above", "above" and "above" the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature. The first feature "below", "below" and "below" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means a specific feature described in connection with the embodiment or example. A structure, material or feature is included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms is not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be in any one or more embodiments or In the examples, they are combined in a suitable manner. In addition, various embodiments or examples described in the specification, as well as features of various embodiments or examples, may be combined and combined.

Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. The embodiments are subject to variations, modifications, substitutions and variations.

Claims

A magnetron sputtering cathode system characterized by comprising:

Circular target; and

A magnetic assembly disposed within the annular target is rotated, the magnetic field lines of the magnetic assembly passing through the annular target.
The magnetron sputtering cathode system according to claim 1, wherein said annular target has an annular shape, a square ring shape or a triangular ring shape.
A magnetron sputtering cathode system according to claim 1, wherein said magnetic component comprises a magnetic member comprising a plurality of E-shaped magnetic elements or U stacked in the axial direction of said annular target Type magnet component.
A magnetron sputtering cathode system according to claim 3 wherein said magnetic element comprises a permanent magnet element and/or an electromagnetic element.
The magnetron sputtering cathode system of claim 4 wherein said magnetic element comprises a plurality of electromagnetic elements, said electromagnetic elements operating independently.
A magnetron sputtering cathode system according to claim 1, wherein said magnetic component comprises a magnetic member and a telescopic member, said magnetic member comprising a plurality of magnetic members stacked in an axial direction of said annular target, The telescopic member is fixedly disposed at one end and connected to the magnetic member at the other end.
A magnetron sputtering cathode system according to claim 6 wherein said telescoping member comprises a push rod or cylinder.
The magnetron sputtering cathode system according to claim 1, wherein said magnetic component comprises a rotating shaft and a magnetic member, and said magnetic member is coupled to said rotating shaft bearing.
A magnetron sputtering cathode system according to claim 8, wherein said magnetic assembly further comprises a telescopic member connecting said rotating shaft and said magnetic member.
The magnetron sputtering cathode system of claim 1 wherein said magnetron sputtering cathode system further comprises:

An annular target back tube disposed within the annular target, the magnetic component being disposed in the ring Inside the target back tube.
The magnetron sputtering cathode system according to claim 10, wherein the material of the annular target back tube comprises oxygen-free copper, metal molybdenum, stainless steel or ceramic.