CN115612994A - A magnetron sputtering cathode - Google Patents

Abstract

The invention discloses a magnetron sputtering cathode. Magnetron sputtering cathode, including: target material, cooling system, magnet frame, magnet, magnetic guide plate and base. Several grids are arranged in the cooling system of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into several sub-flow channels through the grids, and the cooling liquid flowing in from the inlet is respectively divided into each sub-flow channel, and finally converges to the outlet and flows out. Since the cooling liquid in the sub-channel flows in the form of laminar flow, and the grid with high thermal conductivity increases the heat transfer area and heat transfer efficiency, it effectively improves the thermal cycle efficiency of the magnetron sputtering cathode and realizes fast and uniform sputtering. Cooling, so the power density of magnetron sputtering technology can be greatly increased, which in turn can significantly improve the plasma ionization rate and film deposition rate.

Description

A magnetron sputtering cathode

technical field

The invention relates to the technical field of magnetron sputtering cathodes, in particular to the technical field of magnetron sputtering with high ionization and fast deposition, and in particular to a magnetron sputtering cathode.

Background technique

Magnetron sputtering technology has been widely used in the preparation of functional coatings because of its low-temperature deposition, easy control of film thickness, and good repeatability. However, the current traditional magnetron sputtering technology is facing the problem of low plasma ionization rate. On the one hand, it leads to low energy of deposited particles, which seriously affects the density and bonding force of the coating; on the other hand, it leads to small beam current of deposited particles, Seriously affect the deposition efficiency of the coating.

In order to improve the ionization rate, the high-power pulsed magnetron sputtering technology (HiPIMS) was proposed in the industry. This technology ionizes a large number of deposited particles through high-intensity pulsed discharge, and greatly improves the controllability of the coating structure through ion energy control. Optimized coating mechanical properties. However, the introduction of pulses causes frequent ignition during the discharge process, which affects the stability of the discharge. At the same time, the extremely small duty cycle and serious ion resorption also lead to a significant decrease in the deposition rate of the coating, and the increased cost cannot meet the large-scale industrialization. production needs. In view of this, combining the high duty cycle of DC discharge with the high ionization rate of pulse discharge, a new generation of magnetron sputtering technology - continuous high power magnetron sputtering (C-HPMS) is proposed, which can not only The ionization rate is maintained at the level of HiPIMS technology, which can also greatly improve the deposition efficiency of the coating, and is expected to achieve high ionization and rapid deposition at the same time.

However, as the core equipment of magnetron sputtering, the magnetron sputtering cathode cannot withstand such a high-power discharge. Under normal working conditions, its power density is generally only 10-20W/cm ² , which is much lower than that of C-HPMS need. Once the power density of the magnetron sputtering cathode is too high, the heat generated by the discharge will cause problems such as target melting, magnet demagnetization, structural deformation, and sealing failure, causing serious consequences such as water leakage, air leakage, and short circuit. It is difficult to meet the requirements of high power density. Magnetron sputtering discharge requirements.

Therefore, the existing magnetron sputtering cathodes still need to be improved and developed.

Contents of the invention

The technical problem to be solved by the present invention is to provide a novel magnetron sputtering cathode structure for the above-mentioned defects of the existing magnetron sputtering cathode, aiming at solving the problem that the existing cathode cannot continuously discharge high-power magnetron sputtering .

The technical solution adopted by the present invention to solve technical problems is as follows:

A magnetron sputtering cathode, which includes six parts: a target, a cooling system, a magnet frame, a magnet, a magnetic guide plate and a base;

The target is arranged directly above the cooling system;

The cooling system is arranged directly above the magnet frame, and includes: a housing, the hollow part of which forms a cooling passage, and the cooling passage has an inlet and an outlet;

Several grids with thermal conductivity are arranged in the housing, and the grids divide the cooling channel into several flow channels;

Both ends of the shunt channel communicate with the inlet and outlet of the cooling channel respectively;

The cooling liquid in the sub-flow channel flows in the sub-flow channel in a laminar flow manner;

The magnet holder is arranged directly above the base, and the magnet holder is provided with a magnet installation groove on one side facing the base;

The magnet is arranged in the magnet installation groove;

The magnetic conductive plate is arranged on the outer side and the bottom of the magnet.

The magnetron sputtering cathode, wherein the height of a single grid is 1-20 mm, the width is 0.1-10 mm, and the flow rate of the cooling liquid at the inlet is greater than 0.5 L/s.

The magnetron sputtering cathode, wherein there are one or more inlets, and the plurality of inlets are arranged symmetrically or asymmetrically; and/or

There are one or more outlets, and the plurality of outlets are arranged symmetrically or asymmetrically; and/or

The width of the cross-section of a single inlet is 2-20 mm, and the cross-sectional shape of the inlet is one of the basic figures or a combination of basic figures, wherein the basic figures include: circle, ellipse, sector, bow or polygon At least one, the polygon is a figure with sides greater than or equal to 3; and/or

The width of the cross-section of a single outlet is 2-20mm, and the cross-sectional shape of the outlet is one of the basic figures or a combination of basic figures, wherein the basic figures include: circle, ellipse, sector, bow or polygon. At least one, the polygon is a figure with sides greater than or equal to 3; and/or

The shape of the cross section of the runner is one of the basic figures or a combined figure formed by the basic figures, wherein the basic figures include: a circle, an ellipse, a sector, an arc or a polygon or at least one of them, and the polygon is Figures with sides greater than or equal to 3; and/or

The shape of the longitudinal section of the flow channel is one of the basic lines or a combined figure formed by the basic lines, wherein the basic lines include: at least one of a straight line, a curved line, or a folded line.

The magnetron sputtering cathode, wherein, the material of the grid is one or more of materials and alloys thereof that have thermal conductivity and mechanical properties and do not have magnetic properties; and/or

A material with thermal conductivity is deposited on the surface of the grid to accelerate heat dissipation; and/or

The magnet frame is a non-magnetic material; and/or

The magnet is a ferromagnetic material; and/or

The magnetically conductive plate is made of soft magnetic material.

The magnetron sputtering cathode, wherein the material of the grid includes at least one of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and alloys thereof;

At least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid;

The magnet frame is non-magnetic copper, aluminum, stainless steel and alloy materials thereof; and/or

The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20-1000mT; and/or

The magnetic plate is at least one of soft magnetic pure iron magnetic plate, pure nickel magnetic plate, pure cobalt magnetic plate, SU430 steel magnetic plate; and/or

The thickness of the magnetically conductive plate is greater than 2mm; and/or

The base is a non-magnetic structural material; and/or

The thickness of the base is 10-50mm.

The magnetron sputtering cathode, wherein the target is Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanide metals and actinide metals composed of metal elements or compounds; and/or

The target material is a mixed target or a spliced target.

The magnetron sputtering cathode, wherein, the power supply mode of the magnetron sputtering cathode includes high-power pulse magnetron sputtering, DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, intermediate frequency magnetron sputtering At least one of sputtering and composite pulse magnetron sputtering, the average power density of the magnetron sputtering cathode is 50-400W/cm ² ; and/or

The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode; and/or

The length of the magnetron sputtering cathode is 0.05-10m.

The magnetron sputtering cathode, wherein there are one or more cooling systems, and multiple cooling systems are arranged side by side or overlapped; and/or

The cooling liquid is one of tap water, deionized water, pure water, mineral water, and a coolant containing functional reagents.

Beneficial effects: Several grids are arranged in the cooling system of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into several sub-channels through the grids, and the cooling liquid flowing in from the inlet is separately divided into each sub-channel, and finally converged to Outflow. Since the cooling liquid in the sub-channel flows in the form of laminar flow, and the grid with high thermal conductivity increases the heat transfer area and heat transfer efficiency, it effectively improves the thermal cycle efficiency of the magnetron sputtering cathode and realizes fast and uniform sputtering. Cooling, so the power density of magnetron sputtering technology can be greatly increased, which in turn can significantly improve the plasma ionization rate and film deposition rate.

Description of drawings

Fig. 1 is a temperature distribution diagram of a cooling system in the prior art.

Fig. 2 is a schematic cross-sectional view of the centrally controlled sputtering cathode of the present invention.

Fig. 3 is a schematic longitudinal sectional view of the centrally controlled sputtering cathode of the present invention.

Fig. 4 is a simulated temperature (K) distribution diagram of the controlled sputtering cathode in the first embodiment of the present invention.

Fig. 5 is a cross-sectional temperature (° C.) distribution diagram of the controlled sputtering cathode in Embodiment 1 of the present invention.

Fig. 6 is a graph showing the relationship between flow rate and pressure of the controlled sputtering cathode according to Embodiment 1 of the present invention.

Fig. 7 is a graph showing the relationship between the flow rate and the temperature difference of the controlled sputtering cathode in the first embodiment of the present invention.

Fig. 8 is a simulated temperature (K) distribution diagram of the controlled sputtering cathode in the second embodiment of the present invention.

Fig. 9 is a distribution diagram of simulated temperature (K) of the controlled sputtering cathode in the third embodiment of the present invention.

Fig. 10 is a simulated temperature (K) distribution diagram of a controlled sputtering cathode with two cooling systems in the present invention.

Explanation of reference signs:

1. Target material; 2. Cooling system; 21. Grid; 22. Runner; 3. Magnet frame; 4. Magnet; 5. Magnetic plate; 6. Base.

detailed description

In order to make the object, technical solution and advantages of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

Please refer to FIG. 2-FIG. 10 at the same time, the present invention provides some embodiments of a magnetron sputtering cathode.

As shown in Fig. 2-Fig. 3, the magnetron sputtering cathode of the present invention comprises: a target material 1, a cooling system 2, a magnet frame 3, a magnet 4, a magnetic guide plate 5 and a base 6;

The target 1 is arranged directly above the cooling system 2;

The cooling system 2 is arranged directly above the magnet frame 3, and includes: a housing, the hollow part of which constitutes a cooling passage, and the cooling passage has an inlet and an outlet;

Several grids 21 with thermal conductivity are arranged in the housing, and the grids 21 divide the cooling channel into several subflow channels 22;

The two ends of the sub-flow channel 22 communicate with the inlet and outlet of the cooling channel respectively;

The cooling liquid in the sub-flow channel 22 flows in the sub-flow channel 22 in a laminar flow manner;

The magnet frame 3 is arranged directly above the base 6, and the magnet frame 3 is provided with a magnet installation groove toward the side of the base 6;

The magnet 4 is arranged in the magnet installation groove;

The magnetically conductive plate 5 is arranged on the outer side and the bottom of the magnet 4 .

Specifically, the cooling system 2 of the present invention is applied to continuous high-power magnetron sputtering equipment, and specifically can be used as a cooling system for magnetron sputtering cathodes, for example, a cooling system for gas ion sources or a continuous cooling system for arc sources. Continuous high-power magnetron sputtering has both high plasma ionization rate and high deposition rate, which can not only improve the performance of the coating, but also improve the preparation efficiency, and has broad market prospects. However, conventional magnetron sputtering cathodes cannot withstand such a high-power discharge. If the existing magnetron sputtering cathode is applied to continuous high-power magnetron sputtering working conditions, as shown in Figure 1, the maximum temperature of the target surface of the existing magnetron sputtering cathode exceeds 550K, and the minimum temperature is 400K. The overall temperature of the surface is large and the temperature difference is large.

The base 6 and the magnet frame 3 are connected to form an accommodating space to accommodate the magnetically conductive plate 5 and the magnet 4. Specifically, a magnet mounting groove is formed on the side of the magnet frame 3 facing the base 6 to install the magnet 4. The outer side and the bottom of the magnet 4 are provided with a magnetic conductive plate 5. The cooling system installation groove is formed on the side of the magnet frame 3 away from the base 6 to install the cooling system, and the target 1 is located on the side of the cooling system away from the base 6 .

Several grids 21 are arranged in the cooling system 2 of the magnetron sputtering cathode of the present invention, and the cooling channel is divided into several sub-channels 22 by the grids, and the cooling liquid entering at the entrance is respectively divided into each sub-channel 22, and the sub-channels The coolant in 22 flows in a laminar flow, and finally converges to the outlet to flow out. Since the coolant in the sub-channel 22 flows in the form of laminar flow, and the grid with high thermal conductivity increases the heat exchange area and heat exchange efficiency, it effectively improves the thermal cycle efficiency of the magnetron sputtering cathode and realizes fast Uniform cooling, so the power density of magnetron sputtering technology can be greatly increased, thereby significantly improving the plasma ionization rate and film deposition rate. On the one hand, the invention can increase the cooling area; on the other hand, it can basically eliminate the turbulent flow, and form an almost completely laminar flow mode, realize rapid and uniform heat exchange, thereby effectively improving the maximum discharge power density that the magnetron sputtering cathode can withstand , it can make the magnetron sputtering cathode break through the inherent limitation of low discharge power, which has important impetus and practical significance for further improving the comprehensive performance of the coating and accelerating the deposition efficiency of the coating.

In a preferred implementation of the embodiment of the present invention, as shown in Figures 2-3, the height of a single grid 21 is 1-20mm, and the width is 0.1-10mm, and the cooling liquid is The flow rate is greater than 0.5L/s. Specifically, when the height of a single grid 21 is 1-20mm, the width of a single grid 21 is 0.1-10mm, and the flow rate of the cooling liquid at the inlet is greater than 1L/s, it is beneficial to form a better laminar flow and ensure The cooling efficiency is faster and the temperature of the cooling system 2 is more uniform.

In a preferred implementation of the embodiment of the present invention, as shown in Fig. 4, Fig. 8- Fig. 10, there are one or more inlets, and the plurality of inlets are arranged symmetrically or asymmetrically.

Specifically, one or more inlets can be set as required. When multiple inlets are used, part of the flow channel 22 can communicate with a certain inlet instead of communicating with all inlets. When multiple inlets are used, the multiple inlets can be symmetrically arranged on both sides of the cooling system 2 , or asymmetrically arranged, for example, two inlets are used, and both inlets are located on a certain side of the cooling system 2 .

In a preferred implementation of the embodiment of the present invention, as shown in Fig. 4, Fig. 8- Fig. 10, there are one or more outlets, and the plurality of outlets are arranged symmetrically or asymmetrically.

Specifically, one or more outlets may be provided as required. When multiple outlets are used, part of the flow channel 22 may communicate with a certain outlet instead of communicating with all outlets. When multiple outlets are used, the multiple outlets can be symmetrically arranged on both sides of the cooling system 2 , or asymmetrically arranged, for example, two outlets are used, and both outlets are located on a certain side of the cooling system 2 .

In a preferred implementation of the embodiment of the present invention, as shown in Fig. 3, Fig. 4, Fig. 8-Fig. One or a combination of basic figures, wherein the basic figures include: at least one of a circle, an ellipse, a sector, an arc or a polygon, and the polygon is a figure with sides greater than or equal to three.

Specifically, the cross-sectional width of the inlet here refers to the distance between the two furthest points on the contour of the cross-section of the inlet, that is, regardless of the cross-sectional shape of the inlet, the cross-sectional width of the inlet is 2-20 mm. The cross-sectional shape of the entrance can be set as required, and can be circular, elliptical, rectangular, or triangular. Of course, graphics formed by merging and combining these graphics can also be used, for example, a quadrilateral formed by two triangles close together. Triangles close together to form a pentagon. The polygon may be a triangle, a quadrangle, a pentagon, a hexagon, a heptagon, ..., an N-gon, and N represents the number of sides of the polygon. Specifically, the triangle may be an equilateral triangle, an isosceles triangle, a right triangle, and the like. The quadrilateral may be a convex quadrilateral such as a parallelogram, a rectangle, a square, or a prism, and the quadrilateral may also be a concave quadrilateral. Similarly, polygons can be concave or convex, regular or irregular.

In a preferred implementation of the embodiment of the present invention, as shown in Fig. 3, Fig. 4, Fig. 8-Fig. One or a combination of basic figures, wherein the basic figures include: at least one of a circle, an ellipse, a sector, an arc or a polygon, and the polygon is a figure with sides greater than or equal to three.

Specifically, the cross-sectional width of the outlet here refers to the distance between the two furthest points on the contour of the cross-section of the outlet, that is, regardless of the cross-sectional shape of the outlet, the width of the cross-section of the outlet is 2-20 mm. The cross-sectional shape of the outlet can be set as required, and can be circular, elliptical, rectangular, or triangular. Of course, graphics formed by merging and combining these graphics can also be used, for example, a quadrilateral formed by two triangles close together. Triangles close together to form a pentagon. The polygon may be a triangle, a quadrangle, a pentagon, a hexagon, a heptagon, ..., an N-gon, and N represents the number of sides of the polygon. Specifically, the triangle may be an equilateral triangle, an isosceles triangle, a right triangle, and the like. The quadrilateral may be a convex quadrilateral such as a parallelogram, a rectangle, a square, or a prism, and the quadrilateral may also be a concave quadrilateral. Similarly, polygons can be concave or convex, regular or irregular.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 5 , the shape of the cross section of the runner 22 is one of the basic figures or a combined figure formed by the basic figures, wherein the basic figures include: At least one of a circle, an ellipse, a sector, an arc, or a polygon, where the polygon is a figure with sides greater than or equal to 3.

Specifically, the cross section of the flow channel 22 refers to the surface perpendicular to the flow direction of the flow channel 22. The cross-sectional shape of the flow channel 22 can be set according to needs, and can be circular, oval, rectangular, or triangular. The figures formed by merging and combining these figures are, for example, a quadrangle formed by two triangles approaching, and another example, a rectangle and a triangle approaching to form a pentagon. The polygon may be a triangle, a quadrangle, a pentagon, a hexagon, a heptagon, ..., an N-gon, and N represents the number of sides of the polygon. Specifically, the triangle may be an equilateral triangle, an isosceles triangle, a right triangle, and the like. The quadrilateral may be a convex quadrilateral such as a parallelogram, a rectangle, a square, or a prism, and the quadrilateral may also be a concave quadrilateral. Similarly, polygons can be concave or convex, regular or irregular.

It should be emphasized that the basic figure in the present invention may be a closed curve formed by sequentially connecting several straight lines and/or curves. Different cross-sectional shapes of the inlet, cross-sectional shape of the outlet and cross-sectional shape of the flow channel can be obtained through the basic figure or the combined figure formed by the basic figure.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 3 , the shape of the longitudinal section of the runner 22 is one of the basic lines or a combined figure formed by the basic lines, wherein the basic lines include: At least one of straight line, curved line, or polyline.

Specifically, the longitudinal section of the flow channel 22 refers to the surface perpendicular to the flow direction of the flow channel 22. The shape of the longitudinal section of the flow channel 22 can be set according to needs, and straight lines, curves, or broken lines can be used. Of course, a combination of these figures can also be used. The figure formed by combination, for example, the ladder shape formed by the connection of straight lines and straight lines, and the waist shape formed by the connection of straight lines and curves.

In a preferred implementation of the embodiment of the present invention, the material of the grid 21 is one or more of materials and alloys thereof that have thermal conductivity and mechanical properties but not magnetic properties. The material of the grid is one or more of materials and alloys with excellent thermal conductivity, good mechanical properties, and no magnetic properties.

In a preferred implementation of the embodiment of the present invention, the material of the grid 21 includes at least one of copper, brass, aluminum or stainless steel. The material of the grid 21 can be copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and other materials with excellent thermal conductivity, good mechanical properties, and no magnetic conductivity, and their alloys one or more of them.

In a preferred implementation of the embodiment of the present invention, in order to increase heat transfer, a material with thermal conductivity is deposited on the surface of the grid 21 to accelerate heat dissipation.

Specifically, since the inner wall of the runner 22 is formed with a thermally conductive material, the heat on the casing and the grid 21 is easily transferred to the cooling liquid, thereby improving the efficiency of heat transfer.

In a preferred implementation of the embodiment of the present invention, at least one of high thermal conductivity materials such as graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid 21 .

Specifically, high thermal conductivity materials such as graphene, silver, copper, silicon nitride, boron nitride, or aluminum nitride are deposited on the surface of the grid 21 .

In a preferred implementation of the embodiment of the present invention, the target 1 is a simple substance or a compound composed of non-magnetic elements. Magnetic elements include Fe, Co and Ni. The non-magnetic elements refer to elements other than Fe, Co, and Ni. For example, the target material 1 is Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, Metal elements or compounds composed of N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanide metals and actinide metals.

Specifically, the target material 1 of the magnetron sputtering cathode of the present invention has a wide range of applications, and Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V , Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In , Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I, lanthanides and actinides or compounds.

In a preferred implementation of the embodiment of the present invention, the target 1 is a mixed target or a spliced target.

Specifically, a mixed target refers to a target whose target material includes at least two simple substances or compounds, and a spliced target refers to an overall target formed by splicing at least two targets. Single targets, mixed targets or spliced targets can be used as required.

In a preferred implementation of the embodiment of the present invention, the magnet frame 3 is made of a non-magnetic material, and the magnet frame 3 is made of a non-magnetic material.

In a preferred implementation of the embodiment of the present invention, the magnet frame 3 is made of non-magnetically permeable copper, aluminum, stainless steel and alloy materials thereof.

Specifically, the magnet frame 3 is made of materials with excellent thermal conductivity, good mechanical properties, and no magnetic conductivity, and their alloys. For example, copper, aluminum, stainless steel and their alloys can be used. Copper can be copper or brass. copper.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 2 , the magnet 4 is made of a ferromagnetic material, and the magnet is specifically made of a ferromagnetic material.

In a preferred implementation of the embodiment of the present invention, as shown in Figure 2, the magnet 4 is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic pole surface of the magnet 4 is magnetically induced. The intensity is 20~1000mT.

Specifically, the magnet 4 can be a permanent magnet, and the permanent magnet can be at least one of a rare earth permanent magnet or a ferrite permanent magnet, and the rare earth permanent magnet can be a neodymium iron boron permanent magnet, a samarium cobalt permanent magnet, a neodymium nickel cobalt permanent magnet etc., the magnetic induction intensity of the magnetic pole surface of the magnet 4 is 20-1000 mT. The magnet 4 can be composed of one or more pieces, and its shape can be a simple basic figure such as a cube, a column, a trapezoid or a cut corner, or a complex combination figure, and the arrangement can be regular 3 rows, 5 rows, 7 rows, 9 rows Such as the traditional odd-numbered column arrangement, it can also be distributed in even-numbered columns, or a specific distribution in certain patterns.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 2 , the magnetically conductive plate 5 is made of a soft magnetic material, and the magnetically conductive plate 5 is specifically made of a soft magnetic material.

In a preferred implementation of the embodiment of the present invention, as shown in Figure 2, the magnetic guide plate 5 is soft magnetic pure iron magnetic guide plate, pure nickel magnetic guide plate, pure cobalt magnetic guide plate, SU430 steel magnetic guide plate, At least one of all magnetically permeable materials such as magnetic plates.

Specifically, the magnetic plate 5 refers to a device made of a soft magnetic material. For example, the soft magnetic material can be a pure iron magnetic plate, a pure nickel magnetic plate, a pure cobalt magnetic plate, an SU430 steel magnetic plate, etc. All magnetic materials.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 2 , the thickness of the magnetically conductive plate 5 is greater than 2 mm. Specifically, the thickness of the magnetically permeable plate 5 is set as required, and when a magnetically permeable plate 5 with a thickness greater than 2 mm is used, the effect of ensuring the magnetically permeable plate 5 is better.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 2 , the base 6 is a non-magnetic structural material. Specifically, non-magnetic materials of any structure can be used, and the base 6 is made of non-magnetic structural materials, for example, a non-magnetic stainless steel base.

In a preferred implementation of the embodiment of the present invention, as shown in FIG. 2 , the thickness of the base 6 is 10-50 mm. Specifically, the thickness of the base 6 is set according to needs. When a base 6 with a thickness greater than 10-50 mm is used, it is more appropriate to ensure the strength and weight of the base 6 .

In a preferred implementation of the embodiment of the present invention, the power supply mode of the magnetron sputtering cathode includes high-power pulse magnetron sputtering, DC magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, At least one of intermediate frequency magnetron sputtering and composite pulse magnetron sputtering, the average power density of the magnetron sputtering cathode is 50-400W/cm ² . Specifically, the corresponding power supply is configured according to the parameters required by the magnetron sputtering.

In a preferred implementation of the embodiment of the present invention, the magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode.

Specifically, the shape of the magnetron sputtering cathode can be set as required. Of course, when cathodes of different shapes are used, the shape of the cooling system 2 also needs to be adjusted accordingly to fit the cathode to achieve better cooling effect.

In a preferred implementation manner of the embodiment of the present invention, the length of the magnetron sputtering cathode is 0.05-10 m. Specifically, the length of the magnetron sputtering cathode can be set as required.

In a preferred implementation of the embodiment of the present invention, as shown in Fig. 4, Fig. 8- Fig. 10, there are one or more cooling systems 2, and multiple cooling systems 2 are arranged side by side or overlapped in sequence. Specifically, one or more cooling systems 2 can be used. When multiple cooling systems 2 are used, they can be joined together to form a larger cooling system to expand the cooling area, or they can be stacked one after another to improve the cooling effect. Of course, the two can also be combined with each other.

In a preferred implementation manner of the embodiment of the present invention, the cooling liquid is one of tap water, deionized water, purified water, mineral water, and a coolant containing functional reagents.

Specifically, the cooling liquid can be water, and the water can be one of tap water, deionized water, purified water, mineral water, and water containing functional reagents, including rust removers and preservatives.

Specific embodiment one

As shown in Figure 4, the magnetron sputtering cathode of this embodiment has an inlet and two outlets, the inlet is located in the middle of the cooling system, and the two outlets are symmetrically arranged on both sides of the cooling system, and the shape of the inlet and the outlet is a circle shape, a diameter of 10 mm; the height of the grid 21 is 8 mm, the width is 1 mm, the cross section is rectangular, and the longitudinal section is a straight line, the width of each flow channel 22 between the grid 21 is 6 mm, and the surface of the grid 21 is deposited with graphene; magnet The material used for frame 3 is red copper; the material of target 1 is copper; the magnet 4 is a NdFeB permanent magnet, the magnetic induction intensity on the surface of the magnetic pole is 420mT, the shape is a cube, and it is arranged in traditional three rows, a total of 30 pieces; The short-circuit material is SU430 steel with a thickness of 5mm; the material of the base 6 is SU304 steel with a thickness of 20mm; the power supply mode of the magnetron sputtering cathode is high-power pulse magnetron sputtering, and the power density of the target surface etching area is 200W/cm ² ; the cooling liquid is deionized water, and the flow rate is 2L/s; the magnetron sputtering cathode equipment is a rectangular cathode with a length of 300mm, and its cooling system includes a set of sub-cooling systems as shown in Figure 2. At this time, the temperature distribution of the waterway is shown in Figure 4, the temperature difference of the overall waterway does not exceed 20°C, and the temperature distribution of the pipe section is relatively uniform (as shown in Figure 5). Changing the flow rate at the inlet will have a certain effect on the temperature difference (as shown in Figure 6) and the inlet pressure (as shown in Figure 7). Within the allowable range of pressure, the greater the flow rate, the better the cooling effect.

Specific embodiment two

As shown in FIG. 8 , the difference from Embodiment 1 is that the magnetron sputtering cathode has an inlet and an outlet, and the inlet and outlet are located on both sides of the cooling system. At this time, the temperature distribution of the waterway is shown in Figure 4, and the temperature difference of the whole waterway does not exceed 12°C.

Specific embodiment three

As shown in FIG. 9 , the difference from the second embodiment is that the magnetron sputtering cathode, the inlet and the outlet are located in the middle of the cooling system. At this time, the temperature distribution of the waterway is shown in Figure 4, and the temperature difference of the whole waterway does not exceed 11°C.

It should be understood that the application of the present invention is not limited to the above examples, and those skilled in the art can make improvements or transformations according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims (8)

1. A magnetron sputtering cathode is characterized in that, comprising: six parts of target material, cooling system, magnet frame, magnet, magnetic guide plate and base are formed; The target is arranged directly above the cooling system; The cooling system is arranged directly above the magnet frame, and includes: a housing, the hollow part of which forms a cooling passage, and the cooling passage has an inlet and an outlet; Several grids with thermal conductivity are arranged in the housing, and the grids divide the cooling channel into several flow channels; Both ends of the shunt channel communicate with the inlet and outlet of the cooling channel respectively; The cooling liquid in the sub-flow channel flows in the sub-flow channel in a laminar flow manner; The magnet holder is arranged directly above the base, and the magnet holder is provided with a magnet installation groove on one side facing the base; The magnet is arranged in the magnet installation groove; The magnetic conductive plate is arranged on the outer side and the bottom of the magnet. 2. The magnetron sputtering cathode according to claim 1, characterized in that the height of a single grid is 1-20mm, the width is 0.1-10mm, and the flow rate of the cooling liquid at the inlet is greater than 0.5L /s. 3. The magnetron sputtering cathode according to claim 1, wherein there are one or more entrances, and the entrances are arranged symmetrically or asymmetrically; and/or There are one or more outlets, and the plurality of outlets are arranged symmetrically or asymmetrically; and/or The width of the cross-section of a single inlet is 2-20 mm, and the cross-sectional shape of the inlet is one of the basic figures or a combination of basic figures, wherein the basic figures include: circle, ellipse, sector, bow or polygon At least one, the polygon is a figure with sides greater than or equal to 3; and/or The width of the cross-section of a single outlet is 2-20mm, and the cross-sectional shape of the outlet is one of the basic figures or a combination of basic figures, wherein the basic figures include: circle, ellipse, sector, bow or polygon. At least one, the polygon is a figure with sides greater than or equal to 3; and/or The shape of the cross section of the runner is one of the basic figures or a combined figure formed by the basic figures, wherein the basic figures include: a circle, an ellipse, a sector, an arc or a polygon or at least one of them, and the polygon is Figures with sides greater than or equal to 3; and/or The shape of the longitudinal section of the flow channel is one of the basic lines or a combined figure formed by the basic lines, wherein the basic lines include: at least one of a straight line, a curved line, or a folded line. 4. The magnetron sputtering cathode according to claim 1, characterized in that, the material of the grid is one or more of materials and alloys thereof that have thermal conductivity and mechanical properties and do not possess magnetic conductivity ;and / or A material with thermal conductivity is deposited on the surface of the grid to accelerate heat dissipation; and/or The magnet frame is a non-magnetic material; and/or The magnet is a ferromagnetic material; and/or The magnetically conductive plate is made of soft magnetic material. 5. magnetron sputtering cathode according to claim 4, is characterized in that, the material of described grid comprises copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and at least one of its alloys; At least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride is deposited on the surface of the grid; The magnet frame is non-magnetic copper, aluminum, stainless steel and alloy materials thereof; and/or The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20-1000mT; and/or The magnetic plate is at least one of soft magnetic pure iron magnetic plate, pure nickel magnetic plate, pure cobalt magnetic plate, SU430 steel magnetic plate; and/or The thickness of the magnetically conductive plate is greater than 2mm; and/or The base is a non-magnetic structural material; and/or The thickness of the base is 10-50mm. 6. magnetron sputtering cathode according to claim 1, is characterized in that, described target material is Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Tr, Ni, Pb, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, O, S, Se, Te, F, Cl, Br, I and all lanthanides and actinides Elemental metals or compounds; and/or The target material is a mixed target or a spliced target. 7. The magnetron sputtering cathode according to any one of claims 1-6, characterized in that, the power supply mode of the magnetron sputtering cathode comprises high-power pulse magnetron sputtering, DC magnetron sputtering, pulse At least one of magnetron sputtering, radio frequency magnetron sputtering, intermediate frequency magnetron sputtering, composite pulse magnetron sputtering, the average power density of the magnetron sputtering cathode is 50 ~ 400W/cm ² ; and/ or The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode, and a cylindrical cathode; and/or The length of the magnetron sputtering cathode is 0.05-10m. 8. The magnetron sputtering cathode according to any one of claims 1-6, wherein the cooling system has one or more, and a plurality of the cooling systems are arranged side by side or overlapped; and/or The cooling liquid is one of tap water, deionized water, pure water, mineral water, and a coolant containing functional reagents.

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