CN115612994A - Magnetron sputtering cathode - Google Patents
Magnetron sputtering cathode Download PDFInfo
- Publication number
- CN115612994A CN115612994A CN202210971525.4A CN202210971525A CN115612994A CN 115612994 A CN115612994 A CN 115612994A CN 202210971525 A CN202210971525 A CN 202210971525A CN 115612994 A CN115612994 A CN 115612994A
- Authority
- CN
- China
- Prior art keywords
- magnetron sputtering
- magnet
- magnetic
- sputtering cathode
- polygon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 95
- 230000005291 magnetic effect Effects 0.000 claims abstract description 70
- 238000001816 cooling Methods 0.000 claims abstract description 66
- 239000000110 cooling liquid Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000696 magnetic material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- -1 lanthanoid metals Chemical class 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052768 actinide Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000008213 purified water Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000008399 tap water Substances 0.000 claims description 4
- 235000020679 tap water Nutrition 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 10
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 13
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- VQAPWLAUGBBGJI-UHFFFAOYSA-N [B].[Fe].[Rb] Chemical compound [B].[Fe].[Rb] VQAPWLAUGBBGJI-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- SFBMLGJOOALENT-UHFFFAOYSA-N [Co].[Ni].[Nd] Chemical compound [Co].[Ni].[Nd] SFBMLGJOOALENT-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a magnetron sputtering cathode. A magnetron sputtering cathode comprising: target, cooling system, magnet frame, magnet, magnetic conduction board and base. The cooling system of the magnetron sputtering cathode is internally provided with a plurality of grids, the cooling channel is divided into a plurality of sub-channels through the grids, and cooling liquid flowing in from an inlet is respectively divided into the sub-channels and finally converged to an outlet to flow out. Because the cooling liquid in the sub-runners flows in a laminar flow mode, and the grid with high heat conductivity increases the heat exchange area and the heat exchange efficiency, the heat circulation efficiency of the magnetron sputtering cathode is effectively improved, and the rapid and uniform cooling is realized, the power density of the magnetron sputtering technology can be greatly improved, and the plasma ionization rate and the film deposition rate are further obviously improved.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering cathodes, in particular to the technical field of magnetron sputtering with high ionization and rapid deposition, and specifically relates to a magnetron sputtering cathode.
Background
The magnetron sputtering technology has been widely used for preparing functional coatings because of the advantages of low-temperature deposition, easy film thickness control, good repeatability and the like. However, the conventional magnetron sputtering technology faces the problem of low plasma ionization rate, which results in low energy of deposited particles and seriously affects the density and bonding force of the coating on one hand; on the other hand, the deposition particle beam current is small, and the deposition efficiency of the coating is seriously influenced.
In order to improve the ionization rate, a high-power pulse magnetron sputtering technology (HiPIMS) is provided in the industry, the technology enables a large amount of deposited particles to be ionized through high-intensity pulse discharge, the controllability of the coating structure is greatly improved through ion energy control, and the mechanical property of the coating is optimized. However, the introduction of the pulse causes frequent sparking in the discharge process, which affects the discharge stability, and meanwhile, the deposition rate of the coating is greatly reduced due to the extremely small duty ratio and the serious ion resorption, and the increased cost cannot meet the requirement of industrial mass production. In view of this, the high duty ratio of the direct current discharge and the high ionization rate of the pulse discharge are combined, a new generation of magnetron sputtering technology, namely a continuous high-power magnetron sputtering technology (C-HPMS), is provided, the ionization rate can be maintained at the level of the HiPIMS technology, the deposition efficiency of the coating can be greatly improved, and the high ionization and the rapid deposition can be realized at the same time.
However, as a core device of magnetron sputtering, the magnetron sputtering cathode cannot bear such a high-power discharge, and under normal working conditions, the power density is generally only 10-20W/cm 2 Much lower than the requirements of C-HPMS. Once the power density of the magnetron sputtering cathode is too high, the heat generated by discharge can cause the problems of target melting, magnet demagnetization, structural deformation, sealing failure and the like, thereby causing serious consequences of water leakage, air leakage, short circuit and the like, and being difficult to meet the requirement of magnetron sputtering discharge with high power density.
Therefore, the existing magnetron sputtering cathode still needs to be improved and developed.
Disclosure of Invention
The invention aims to solve the technical problem of providing a novel magnetron sputtering cathode structure aiming at overcoming the defects of the conventional magnetron sputtering cathode and solving the problem that the conventional cathode cannot meet the continuous high-power magnetron sputtering discharge requirement.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a magnetron sputtering cathode, comprising: the device comprises a target, a cooling system, a magnet frame, a magnet, a magnetic conduction plate and a base;
the target is arranged right above the cooling system;
cooling system set up in directly over the magnet frame, include: a housing, a hollow portion of the housing constituting a cooling channel having an inlet and an outlet;
a plurality of grids with heat conducting property are arranged in the shell and divide the cooling channel into a plurality of sub-channels;
two ends of the sub-runner are respectively communicated with an inlet and an outlet of the cooling channel;
the cooling liquid in the sub-flow passage flows in the sub-flow passage in a laminar flow manner;
the magnet frame is arranged right above the base, and a magnet mounting groove is formed in one side, facing the base, of the magnet frame;
the magnet is arranged in the magnet mounting groove;
the magnetic conduction plates are arranged on the outer side and the bottom of the magnet.
The magnetron sputtering cathode is characterized in that the height of each grid is 1-20 mm, the width of each grid is 0.1-10 mm, and the flow rate of the cooling liquid at the inlet is more than 0.5L/s.
The magnetron sputtering cathode is characterized in that one or more inlets are arranged, and the inlets are symmetrically or asymmetrically arranged; and/or
One or more outlets are arranged, and the outlets are symmetrically or asymmetrically arranged; and/or
The width of the cross section of each inlet is 2-20 mm, the cross section of each inlet is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, and the basic patterns comprise: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The width of the cross section of each outlet is 2-20 mm, the cross section of each outlet is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, and the basic patterns comprise: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The cross section of the sub-runner is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, wherein the basic patterns comprise: the shape of the figure is a circle, an ellipse, a fan, an arch or a polygon or at least one of the circles, the ellipse, the fan, the arch or the polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The shape of the longitudinal section of the sub-runner is one of basic lines or a combined pattern formed by the basic lines, wherein the basic lines comprise: at least one of a straight line, a curved line, or a broken line.
The magnetron sputtering cathode is characterized in that the grid is made of one or more of materials with heat conductivity and mechanical property and without magnetic conductivity and alloys thereof; and/or
The surface of the grid is deposited with a material with heat conductivity to accelerate heat dissipation; and/or
The magnet frame is a non-magnetic-conductive material; and/or
The magnet is made of ferromagnetic materials; and/or
The magnetic conduction plate is made of soft magnetic materials.
The magnetron sputtering cathode, wherein the material of the grid comprises at least one of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium and alloys thereof;
depositing at least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride on the surface of the grid;
the magnet frame is made of non-magnetic-conductive copper, aluminum, stainless steel materials and alloy materials thereof; and/or
The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20-1000 mT; and/or
The magnetic conductive plate is at least one of a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate and an SU430 steel magnetic conductive plate; and/or
The thickness of the magnetic conducting plate is larger than 2mm; and/or
The base is made of a non-magnetic structural material; and/or
The thickness of the base is 10-50 mm.
The magnetron sputtering cathode is characterized In that the target material is a metal simple substance or a compound consisting of Li, na, K, rb, be, mg, ca, sr, ba, sc, Y, ti, zr, hf, V, nb, ta, cr, mo, W, mn, re, fe, ru, os, co, rh, tr, ni, pb, pt, cu, ag, au, zn, cd, B, al, ga, in, tl, C, si, ge, sn, pb, N, P, as, sb, O, S, se, te, F, cl, br, I and all lanthanide metals and actinide metals; and/or
The target material is a mixed target or a spliced target.
The magnetron sputtering cathode comprises a power supply mode of at least one of high-power pulse magnetron sputtering, direct-current magnetron sputtering, pulse magnetron sputtering, radio-frequency magnetron sputtering, medium-frequency magnetron sputtering and composite pulse magnetron sputtering, and the average power density of the magnetron sputtering cathode is 50-400W/cm 2 (ii) a And/or
The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode and a cylindrical cathode; and/or
The length of the magnetron sputtering cathode is 0.05-10 m.
The magnetron sputtering cathode is characterized in that one or more cooling systems are provided, and a plurality of cooling systems are arranged side by side or overlapped; and/or
The cooling liquid is one of tap water, deionized water, purified water, mineral water and a coolant containing functional reagents.
Has the beneficial effects that: the cooling system of the magnetron sputtering cathode is internally provided with a plurality of grids, the cooling channel is divided into a plurality of sub-channels through the grids, and cooling liquid flowing in from an inlet is respectively divided into the sub-channels and finally converged to an outlet to flow out. Because the cooling liquid in the sub-channel flows in a laminar flow mode, and the grid with high thermal conductivity increases the heat exchange area and the heat exchange efficiency, the heat circulation efficiency of the magnetron sputtering cathode is effectively improved, and the rapid and uniform cooling is realized, the power density of the magnetron sputtering technology can be greatly improved, and the plasma ionization rate and the film deposition rate are further obviously improved.
Drawings
FIG. 1 is a temperature profile of a prior art cooling system.
FIG. 2 is a schematic cross-sectional view of a controlled sputtering cathode of the present invention.
FIG. 3 is a schematic longitudinal cross-sectional view of a controlled sputtering cathode according to the present invention.
FIG. 4 is a simulated temperature (K) profile of a sputtering control cathode according to a first embodiment of the present invention.
FIG. 5 is a temperature distribution (C.) of the cross section of a sputtering control cathode according to a first embodiment of the present invention.
FIG. 6 is a graph of the relationship between the flow rate and the pressure of a sputtering control cathode according to a first embodiment of the present invention.
FIG. 7 is a graph of the relationship between the flow rate and the temperature difference of the sputtering control cathode according to the first embodiment of the present invention.
FIG. 8 is a simulated temperature (K) profile of a sputtering control cathode according to a second embodiment of the present invention.
FIG. 9 is a simulated temperature (K) profile of a sputtering control cathode according to a third embodiment of the present invention.
FIG. 10 is a simulated temperature (K) profile for a controlled sputtering cathode having two cooling systems according to the present invention.
Description of the reference numerals:
1. a target material; 2. a cooling system; 21. a grid; 22. a shunt channel; 3. a magnet holder; 4. a magnet; 5. a magnetic conductive plate; 6. a base.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 2-10, the present invention provides some embodiments of a magnetron sputtering cathode.
As shown in fig. 2 to 3, the magnetron sputtering cathode of the present invention includes: the device comprises a target 1, a cooling system 2, a magnet frame 3, a magnet 4, a magnetic conduction plate 5 and a base 6;
the target 1 is arranged right above the cooling system 2;
cooling system 2 set up in directly over magnet frame 3 includes: a housing, a hollow portion of the housing constituting a cooling channel having an inlet and an outlet;
a plurality of grids 21 with heat-conducting property are arranged in the shell, and the grids 21 divide the cooling channel into a plurality of sub-channels 22;
the two ends of the branch flow passage 22 are respectively communicated with the inlet and the outlet of the cooling passage;
the coolant in the sub-runners 22 flows in the sub-runners 22 in a laminar manner;
the magnet frame 3 is arranged right above the base 6, and a magnet mounting groove is formed in one side, facing the base 6, of the magnet frame 3;
the magnet 4 is arranged in the magnet mounting groove;
the magnetic conduction plate 5 is arranged at the outer side and the bottom of the magnet 4.
In particular, the cooling system 2 of the present invention is applied to a continuous high power magnetron sputtering apparatus, which may be used in particular as a cooling system for a magnetron sputtering cathode, for example, a cooling system for a gas ion source or a cooling system for an arc source. The continuous high-power magnetron sputtering has high plasma ionization rate and high deposition rate, can improve the performance of the coating, can improve the preparation efficiency, and has wide market prospect. Conventional magnetron sputtering cathodes, however, cannot withstand such powerful discharges. If the conventional magnetron sputtering cathode is applied to a continuous high-power magnetron sputtering working condition, as shown in fig. 1, the maximum temperature of the target surface of the conventional magnetron sputtering cathode exceeds 550K, the minimum temperature is 400K, and the overall temperature of the target surface is large and the temperature difference is large.
A plurality of grids 21 are arranged in a cooling system 2 of the magnetron sputtering cathode, a cooling channel is divided into a plurality of sub-channels 22 through the grids, cooling liquid entering from an inlet is respectively divided into the sub-channels 22, and the cooling liquid in the sub-channels 22 flows in a laminar flow mode and finally converges to an outlet to flow out. Because the cooling liquid in the sub-channel 22 flows in a laminar flow mode, and the grid with high thermal conductivity increases the heat exchange area and the heat exchange efficiency, the heat circulation efficiency of the magnetron sputtering cathode is effectively improved, and the rapid and uniform cooling is realized, the power density of the magnetron sputtering technology can be greatly improved, and the plasma ionization rate and the film deposition rate are further obviously improved. On one hand, the invention can increase the cooling area; on the other hand, turbulence can be basically eliminated, a flow mode of almost complete laminar flow is formed, and rapid and uniform heat exchange is realized, so that the maximum discharge power density which can be borne by the magnetron sputtering cathode is effectively improved, the inherent limitation of low discharge power can be broken through by the magnetron sputtering cathode, and the method has important promotion and practical significance for further improving the comprehensive performance of the coating and accelerating the deposition efficiency of the coating.
In a preferred implementation of the embodiment of the invention, as shown in fig. 2-3, the height of the individual grids 21 is 1-20 mm, the width is 0.1-10 mm, and the flow rate of the cooling liquid at the inlet is greater than 0.5L/s. Specifically, when the height of the single grid 21 is 1-20 mm, the width of the single grid 21 is 0.1-10 mm, and the flow rate of the cooling liquid at the inlet is greater than 1L/s, better laminar flow is favorably formed, the cooling efficiency is ensured to be faster, and the temperature of the cooling system 2 is more uniform.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 4, 8-10, there are one or more inlets, and the plurality of inlets are arranged symmetrically or asymmetrically.
Specifically, the inlet may be one or more as needed, and when a plurality of inlets are used, some of the runners 22 may communicate with one inlet, rather than all of the inlets. When a plurality of inlets are used, the plurality of inlets may be symmetrically arranged on both sides of the cooling system 2, or may be asymmetrically arranged, for example, two inlets are used, and both inlets are located on one side of the cooling system 2.
In a preferred implementation of the embodiment of the invention, as shown in fig. 4, 8-10, there are one or more outlets, and the plurality of outlets are arranged symmetrically or asymmetrically.
Specifically, the number of outlets may be one or more as needed, and when a plurality of outlets are adopted, some of the runners 22 may be communicated with a certain outlet, rather than all of the outlets. When a plurality of outlets are used, the outlets may be symmetrically arranged on both sides of the cooling system 2, or may be asymmetrically arranged, for example, two outlets are used, and both outlets are located on one side of the cooling system 2.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 3, 4, 8-10, the width of the cross section of a single inlet is 2-20 mm, and the cross section of the inlet has a shape of one of basic patterns or a combined pattern formed by the basic patterns, wherein the basic patterns include: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3.
Specifically, the width of the cross-section of the inlet herein refers to a distance between two points farthest apart on the profile of the cross-section of the inlet, that is, the width of the cross-section of the inlet is 2 to 20mm regardless of the shape of the cross-section of the inlet. The cross-sectional shape of the inlet can be set according to the requirement, and can be circular, oval, rectangular, or triangular, and of course, a figure formed by combining and combining these figures can also be used, for example, a quadrangle formed by two triangles closing together, and for example, a pentagon formed by a rectangle and a triangle closing together. The polygon can be a trilateral, quadrilateral, pentagonal, hexagonal, heptagonal, \8230;, or N-sided polygon, where N represents the number of sides of the polygon. The triangle may be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrangle can be a convex quadrangle such as a parallelogram, a rectangle, a square and a prism, and the quadrangle can also be a concave quadrangle. Similarly, the polygon may be a concave polygon or a convex polygon, and may be a regular polygon or an irregular polygon.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 3, 4, 8-10, the width of the cross section of a single outlet is 2-20 mm, and the cross section of the outlet has a shape of one of basic patterns or a combined pattern formed by the basic patterns, wherein the basic patterns include: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3.
Specifically, the width of the cross section of the outlet here means the distance of two points farthest apart on the profile of the cross section of the outlet, that is, the width of the cross section of the outlet is 2 to 20mm regardless of the cross sectional shape of the outlet. The cross-sectional shape of the outlet can be set according to the requirement, and can be circular, oval, rectangular or triangular, and of course, a figure formed by combining and combining these figures can also be adopted, for example, a quadrangle formed by two triangles closing together, and for example, a pentagon formed by a rectangle and a triangle closing together. The polygon may be a trilateral, quadrilateral, pentagonal, hexagonal, heptagonal, \ 8230;, or N-sided, where N represents the number of sides of the polygon. The triangle may be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrangle can be a convex quadrangle such as a parallelogram, a rectangle, a square and a prism, and the quadrangle can also be a concave quadrangle. Similarly, the polygon may be a concave polygon or a convex polygon, and may be a regular polygon or an irregular polygon.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 5, the cross-section of the runner 22 has a shape of one of basic patterns or a combined pattern formed by the basic patterns, wherein the basic patterns include: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3.
Specifically, the cross section of the branch channel 22 refers to a plane perpendicular to the flow direction of the branch channel 22, the cross section of the branch channel 22 may be set as required, and may be circular, oval, rectangular, or triangular, or may be a combination of these figures, for example, two triangles are close to each other to form a quadrangle, and for example, a rectangle and a triangle are close to each other to form a pentagon. The polygon may be a trilateral, quadrilateral, pentagonal, hexagonal, heptagonal, \ 8230;, or N-sided, where N represents the number of sides of the polygon. The triangle can be an equilateral triangle, an isosceles triangle, a right triangle, etc. The quadrangle can be a convex quadrangle such as a parallelogram, a rectangle, a square and a prism, and the quadrangle can also be a concave quadrangle. Similarly, the polygon may be a concave polygon or a convex polygon, and may be a regular polygon or an irregular polygon.
It should be emphasized that the basic graph in the present invention may be a closed curve formed by connecting several straight lines and/or curves in sequence. Different inlet cross-sectional shapes, outlet cross-sectional shapes and sub-runner cross-sectional shapes can be obtained through the basic pattern or the combined pattern formed by the basic pattern.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 3, the shape of the longitudinal section of the runner 22 is one of basic lines or a combined pattern formed by the basic lines, wherein the basic lines include: at least one of a straight line, a curved line, or a broken line.
Specifically, the longitudinal section of the branch channel 22 refers to a plane perpendicular to the flow direction of the branch channel 22, the shape of the longitudinal section of the branch channel 22 may be set as required, and may be a straight line, a curved line, or a broken line, or a combination of these figures, for example, a step shape formed by connecting a straight line and a straight line, or a kidney shape formed by connecting a straight line and a curved line.
In a preferred implementation manner of the embodiment of the present invention, the material of the grid 21 is one or more of a material having thermal conductivity and mechanical property and no magnetic conductivity, and an alloy thereof. The material of the grating is one or more of materials with excellent heat-conducting property, good mechanical property and no magnetic conductivity and alloys thereof.
In a preferred implementation of the embodiment of the present invention, the material of the grid 21 includes at least one of copper, brass, aluminum or stainless steel. The grid 21 may be made of one or more of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium, and other materials with excellent thermal conductivity, good mechanical properties, and no magnetic conductivity, and alloys thereof.
In a preferred implementation of the embodiment of the present invention, in order to increase the heat transfer, a material with thermal conductivity is deposited on the surface of the grid 21 to accelerate the heat dissipation.
Specifically, since the inner wall of the branch flow passage 22 is formed with a material having thermal conductivity, heat on the housing and the grids 21 is easily transferred to the cooling liquid, and the efficiency of heat transfer is improved.
In a preferred implementation manner of the embodiment of the present invention, at least one of high thermal conductive materials such as graphene, silver, copper, silicon nitride, boron nitride, or aluminum nitride is deposited on the surface of the grid 21.
Specifically, a highly thermally conductive material such as graphene, silver, copper, silicon nitride, boron nitride, or aluminum nitride is deposited on the surface of the grid 21.
In a preferred implementation manner of the embodiment of the present invention, the target 1 is a simple substance or a compound of a non-magnetic conductive element. The magnetic conductive elements include Fe, co and Ni. The nonmagnetic elements are elements other than Fe, co, and Ni. For example, the target 1 is a simple metal or a compound of Li, na, K, rb, be, mg, ca, sr, ba, sc, Y, ti, zr, hf, V, nb, ta, cr, mo, W, mn, re, fe, ru, os, co, rh, tr, ni, pb, pt, cu, ag, au, zn, cd, B, al, ga, in, tl, C, si, ge, sn, pb, N, P, as, sb, O, S, se, te, F, cl, br, I, and all lanthanoids and actinides.
Specifically, the target material 1 of the magnetron sputtering cathode of the present invention has a wide application range, and may Be a simple substance or a compound formed of elements such As Li, na, K, rb, be, mg, ca, sr, ba, sc, Y, ti, zr, hf, V, nb, ta, cr, mo, W, mn, re, fe, ru, os, co, rh, tr, ni, pb, pt, cu, ag, au, zn, cd, B, al, ga, in, tl, C, si, ge, sn, pb, N, P, as, sb, O, S, se, te, F, cl, br, I, lanthanoid metals, and actinoid metals.
In a preferred implementation manner of the embodiment of the present invention, the target material 1 is a mixed target or a spliced target.
Specifically, the mixed target refers to a target material comprising at least two simple substances or compounds, and the spliced target refers to an integral target material formed by splicing at least two target materials. A single target, a mixed target or a spliced target can be adopted as required.
In a preferred implementation manner of the embodiment of the present invention, the magnet frame 3 is a non-magnetic material, and specifically, the magnet frame 3 is made of the non-magnetic material.
In a preferred implementation manner of the embodiment of the present invention, the magnet frame 3 is made of non-magnetic conductive materials such as copper, aluminum, stainless steel, and alloys thereof.
Specifically, the magnet holder 3 is made of a material having excellent thermal conductivity, good mechanical properties, and no magnetic conductivity, and an alloy thereof, for example, copper, aluminum, stainless steel, and an alloy thereof may be used, and copper may be red copper or brass.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 2, the magnet 4 is made of a ferromagnetic material.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 2, the magnet 4 is at least one of a ferromagnetic rare earth permanent magnet or a ferromagnetic ferrite permanent magnet, and the magnetic pole surface magnetic induction of the magnet 4 is 20 to 1000mT.
Specifically, the magnet 4 may be a permanent magnet, the permanent magnet may be at least one of a rare earth permanent magnet or a ferrite permanent magnet, the rare earth permanent magnet may be a rubidium-iron-boron permanent magnet, a samarium-cobalt permanent magnet, a neodymium-nickel-cobalt permanent magnet, or the like, and the magnetic induction intensity on the magnetic pole surface of the magnet 4 is 20 to 1000mT. The magnet 4 may be composed of one or more blocks, and the shape thereof may be a simple basic pattern or a complex combined pattern such as a cube, a column, a trapezoid, or a corner cut, and the like, and the arrangement may be regular 3 rows, 5 rows, 7 rows, 9 rows, and the like of the conventional odd-numbered rows, may also be an even-numbered row, or may be a specific distribution in some patterns.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 2, the magnetic conduction plate 5 is made of a soft magnetic material, and specifically, the magnetic conduction plate 5 is made of a soft magnetic material.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 2, the magnetic conductive plate 5 is at least one of all magnetic conductive materials, such as a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate, and an SU430 steel magnetic conductive plate.
Specifically, the magnetic conductive plate 5 is a device made of a soft magnetic material, for example, the soft magnetic material may be a pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate, an SU430 steel magnetic conductive plate, or any other magnetic conductive material.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 2, the thickness of the magnetic conductive plate 5 is greater than 2mm. Specifically, the thickness of the magnetic conductive plate 5 is set as required, and when the magnetic conductive plate 5 with the thickness greater than 2mm is adopted, the effect of the magnetic conductive plate 5 is better.
In a preferred implementation manner of the embodiment of the present invention, as shown in fig. 2, the base 6 is made of a non-magnetic material. Specifically, any structure of non-magnetic conductive material may be used, and the base 6 is made of a non-magnetic structural material, for example, a non-magnetic stainless steel base.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 2, the thickness of the base 6 is 10-50 mm. Specifically, the thickness of the base 6 is set as required, and when the base 6 having a thickness of more than 10 to 50mm is used, the strength and weight of the base 6 are ensured to be appropriate.
In a preferred implementation manner of the embodiment of the present invention, the power supply manner of the magnetron sputtering cathode includes high power pulse magnetron sputtering, direct current magnetron sputtering, pulse magnetron sputtering, radio frequency magnetron sputtering, medium frequency magnetron sputtering,At least one of composite pulse magnetron sputtering, wherein the average power density of the magnetron sputtering cathode is 50-400W/cm 2 . Specifically, the corresponding power supply is configured according to parameters required by magnetron sputtering.
In a preferred implementation manner of the embodiment of the present invention, the magnetron sputtering cathode is at least one of a rectangular cathode, a cylindrical cathode, a circular cathode, and a cylindrical cathode.
Specifically, the shape of the magnetron sputtering cathode can be set as required, and certainly, when cathodes with different shapes are adopted, the shape of the cooling system 2 also needs to be correspondingly adjusted to adapt to the cathode, so as to obtain a better cooling effect.
In a preferred implementation manner of the embodiment of the invention, the length of the magnetron sputtering cathode is 0.05-10 m. Specifically, the length of the magnetron sputtering cathode can be set as required.
In a preferred implementation of the embodiment of the present invention, as shown in fig. 4, 8-10, there are one or more cooling systems 2, and a plurality of cooling systems 2 are arranged side by side or overlapped in sequence. Specifically, one or more cooling systems 2 can be adopted, and when a plurality of cooling systems 2 are adopted, the cooling systems can be mutually closed to form a cooling system with a larger size, so that the cooling area is enlarged, and the cooling systems can also be sequentially arranged in an overlapping manner, so that the cooling effect is improved. Of course, the two may be combined with each other.
In a preferred implementation manner of the embodiment of the present invention, the cooling liquid is one of tap water, deionized water, purified water, mineral water, and a coolant containing a functional agent.
Specifically, the cooling liquid may be water, and the water may be tap water, deionized water, purified water, mineral water, or water containing functional agents, such as rust remover and antiseptic.
Detailed description of the preferred embodiment
As shown in fig. 4, the magnetron sputtering cathode of this embodiment has an inlet and two outlets, the inlet is located in the middle of the cooling system, the two outlets are symmetrically arranged on two sides of the cooling system, the inlet and the outlet are circular, and the diameter is 10mm;the height of the grids 21 is 8mm, the width of the grids is 1mm, the cross sections of the grids are rectangular, the longitudinal sections of the grids are straight lines, the width of each shunt channel 22 between the grids 21 is 6mm, and graphene is deposited on the surfaces of the grids 21; the magnet frame 3 is made of red copper; the target material 1 is made of copper; the magnet 4 is a rubidium iron boron permanent magnet, the magnetic induction intensity of the magnetic pole surface is 420mT, the shape is a cube, the magnet is arranged in three traditional rows, and the total number of the magnet is 30; the magnetic short circuit material is SU430 steel with the thickness of 5mm; the base 6 is made of SU304 steel and has a thickness of 20mm; the power supply mode of the magnetron sputtering cathode is high-power pulse magnetron sputtering, and the power density of the target surface etching area is 200W/cm 2 (ii) a The cooling liquid is deionized water, and the flow rate is 2L/s; the magnetron sputtering cathode device is a rectangular cathode with the length of 300mm, and the cooling system comprises a group of sub-cooling systems shown in figure 2. At this time, the temperature distribution of the water path is as shown in fig. 4, the temperature difference of the whole water path does not exceed 20 ℃, and the distribution of the temperature of the cross section of the pipeline is relatively uniform (as shown in fig. 5). Changing the inlet flow rate will have a certain effect on the temperature difference (as shown in fig. 6) and the inlet pressure (as shown in fig. 7), and the larger the flow rate, the better the cooling effect.
Detailed description of the invention
As shown in fig. 8, unlike the first embodiment, the magnetron sputtering cathode has an inlet and an outlet, which are located at both sides of the cooling system. At this time, the temperature distribution of the water path is as shown in fig. 4, and the temperature difference of the whole water path does not exceed 12 ℃.
Detailed description of the preferred embodiment
As shown in FIG. 9, unlike the second embodiment, the magnetron sputtering cathode, the inlet and the outlet are located at the middle position of the cooling system. At this time, the temperature distribution of the water path is as shown in fig. 4, and the temperature difference of the whole water path does not exceed 11 ℃.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (8)
1. A magnetron sputtering cathode, comprising: the device comprises a target, a cooling system, a magnet frame, a magnet, a magnetic conduction plate and a base;
the target is arranged right above the cooling system;
cooling system set up in directly over the magnet frame, include: a housing, a hollow portion of the housing constituting a cooling channel having an inlet and an outlet;
a plurality of grids with heat conducting property are arranged in the shell and divide the cooling channel into a plurality of sub-channels;
two ends of the sub-runners are respectively communicated with the inlet and the outlet of the cooling channel;
the cooling liquid in the sub-flow passage flows in the sub-flow passage in a laminar flow manner;
the magnet frame is arranged right above the base, and a magnet mounting groove is formed in one side, facing the base, of the magnet frame;
the magnet is arranged in the magnet mounting groove;
the magnetic conduction plates are arranged on the outer side and the bottom of the magnet.
2. The magnetron sputtering cathode according to claim 1, wherein the height of the individual grids is 1-20 mm, the width is 0.1-10 mm, and the flow rate of the cooling liquid at the inlet is greater than 0.5L/s.
3. The magnetron sputtering cathode according to claim 1, wherein one or more of the inlets are arranged, and the plurality of inlets are arranged symmetrically or asymmetrically; and/or
One or more outlets are arranged, and the outlets are symmetrically or asymmetrically arranged; and/or
The width of the cross section of each inlet is 2-20 mm, the cross section of each inlet is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, and the basic patterns comprise: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The width of the cross section of each outlet is 2-20 mm, the cross section of each outlet is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, and the basic patterns comprise: at least one of a circle, an ellipse, a fan, an arch or a polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The cross section of the sub-runner is in the shape of one of basic patterns or a combined pattern formed by the basic patterns, wherein the basic patterns comprise: the shape of the figure is a circle, an ellipse, a fan, an arch or a polygon, or at least one of the circles, the ellipse, the fan, the arch or the polygon, wherein the polygon is a figure with the number of sides being more than or equal to 3; and/or
The shape of the longitudinal section of the sub-runner is one of basic lines or a combined pattern formed by the basic lines, wherein the basic lines comprise: at least one of a straight line, a curved line, or a broken line.
4. The magnetron sputtering cathode according to claim 1, wherein the material of the grid is one or more of a material having thermal conductivity and mechanical properties and no magnetic conductivity and an alloy thereof; and/or
The surface of the grid is deposited with a material with thermal conductivity to accelerate heat dissipation; and/or
The magnet frame is a non-magnetic-conductive material; and/or
The magnet is made of ferromagnetic materials; and/or
The magnetic conduction plate is made of soft magnetic materials.
5. The magnetron sputtering cathode according to claim 4, wherein the material of the grid comprises at least one of copper, aluminum, magnesium, titanium, chromium, vanadium, tungsten, zinc, silver, molybdenum, niobium, zirconium, and alloys thereof;
depositing at least one of graphene, silver, copper, silicon nitride, boron nitride or aluminum nitride on the surface of the grid;
the magnet frame is made of non-magnetic-conductive copper, aluminum, stainless steel materials and alloy materials thereof; and/or
The magnet is at least one of a ferromagnetic rare earth permanent magnet or a ferrite permanent magnet, and the magnetic induction intensity of the magnetic pole surface of the magnet is 20-1000 mT; and/or
The magnetic conductive plate is at least one of a soft magnetic pure iron magnetic conductive plate, a pure nickel magnetic conductive plate, a pure cobalt magnetic conductive plate and an SU430 steel magnetic conductive plate; and/or
The thickness of the magnetic conducting plate is larger than 2mm; and/or
The base is made of a non-magnetic structural material; and/or
The thickness of the base is 10-50 mm.
6. The magnetron sputtering cathode according to claim 1, wherein the target material is a simple metal or compound of Li, na, K, rb, be, mg, ca, sr, ba, sc, Y, ti, zr, hf, V, nb, ta, cr, mo, W, mn, re, fe, ru, os, co, rh, tr, ni, pb, pt, cu, ag, au, zn, cd, B, al, ga, in, tl, C, si, ge, sn, pb, N, P, as, sb, O, S, se, te, F, cl, br, I, and all of lanthanoid metals and actinoid metals; and/or
The target material is a mixed target or a spliced target.
7. The magnetron sputtering cathode according to any one of claims 1 to 6, wherein the power supply mode of the magnetron sputtering cathode comprises at least one of high-power pulse magnetron sputtering, direct-current magnetron sputtering, pulse magnetron sputtering, radio-frequency magnetron sputtering, medium-frequency magnetron sputtering and composite pulse magnetron sputtering, and the average power density of the magnetron sputtering cathode is 50-400W/cm 2 (ii) a And/or
The magnetron sputtering cathode is at least one of a rectangular cathode, a columnar cathode, a circular cathode and a cylindrical cathode; and/or
The length of the magnetron sputtering cathode is 0.05-10 m.
8. The magnetron sputtering cathode according to any one of claims 1 to 6, wherein one or more of the cooling systems are arranged side by side or in an overlapping manner; and/or
The cooling liquid is one of tap water, deionized water, purified water, mineral water and a coolant containing a functional reagent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210971525.4A CN115612994A (en) | 2022-08-12 | 2022-08-12 | Magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210971525.4A CN115612994A (en) | 2022-08-12 | 2022-08-12 | Magnetron sputtering cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115612994A true CN115612994A (en) | 2023-01-17 |
Family
ID=84857553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210971525.4A Pending CN115612994A (en) | 2022-08-12 | 2022-08-12 | Magnetron sputtering cathode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115612994A (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7087145B1 (en) * | 2005-03-10 | 2006-08-08 | Robert Choquette | Sputtering cathode assembly |
| US20090139853A1 (en) * | 2007-11-30 | 2009-06-04 | Panasonic Corporation | Sputtering apparatus and sputtering method |
| CN107043915A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | The system that magnetron sputtering prepares ito thin film |
| CN107083537A (en) * | 2017-05-02 | 2017-08-22 | 霍尔果斯迅奇信息科技有限公司 | New high target utilization ratio planar magnetic control sputtering cathode |
| WO2018119600A1 (en) * | 2016-12-26 | 2018-07-05 | 深圳市柔宇科技有限公司 | Magnetron sputtering cathode system |
| CN108431926A (en) * | 2015-11-12 | 2018-08-21 | 霍尼韦尔国际公司 | Sputtering target backer board assembly with cooling structure |
| CN110344009A (en) * | 2018-04-04 | 2019-10-18 | 长鑫存储技术有限公司 | Magnetron sputtering system with magnetized cooling water device and magnetron sputtering equipment |
| JP2020015961A (en) * | 2018-07-26 | 2020-01-30 | キヤノン株式会社 | Rotary cathode and film deposition apparatus having the same |
| CN112176300A (en) * | 2019-07-02 | 2021-01-05 | Spts科技有限公司 | Deposition apparatus and associated methods |
| CN112304344A (en) * | 2020-09-24 | 2021-02-02 | 东北电力大学 | Micro magnetic grid for magnetic encoder manufactured by magnetron sputtering method and manufacturing method thereof |
| CN213295493U (en) * | 2020-08-21 | 2021-05-28 | 梭莱镀膜工业(江阴)有限公司 | Cooling system of magnetron sputtering magnetic rod |
| CN216039797U (en) * | 2021-07-29 | 2022-03-15 | 华映科技（集团）股份有限公司 | Magnetic control cathode structure for physical vapor deposition machine |
-
2022
- 2022-08-12 CN CN202210971525.4A patent/CN115612994A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7087145B1 (en) * | 2005-03-10 | 2006-08-08 | Robert Choquette | Sputtering cathode assembly |
| US20090139853A1 (en) * | 2007-11-30 | 2009-06-04 | Panasonic Corporation | Sputtering apparatus and sputtering method |
| CN108431926A (en) * | 2015-11-12 | 2018-08-21 | 霍尼韦尔国际公司 | Sputtering target backer board assembly with cooling structure |
| WO2018119600A1 (en) * | 2016-12-26 | 2018-07-05 | 深圳市柔宇科技有限公司 | Magnetron sputtering cathode system |
| CN107043915A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | The system that magnetron sputtering prepares ito thin film |
| CN107083537A (en) * | 2017-05-02 | 2017-08-22 | 霍尔果斯迅奇信息科技有限公司 | New high target utilization ratio planar magnetic control sputtering cathode |
| CN110344009A (en) * | 2018-04-04 | 2019-10-18 | 长鑫存储技术有限公司 | Magnetron sputtering system with magnetized cooling water device and magnetron sputtering equipment |
| JP2020015961A (en) * | 2018-07-26 | 2020-01-30 | キヤノン株式会社 | Rotary cathode and film deposition apparatus having the same |
| CN112176300A (en) * | 2019-07-02 | 2021-01-05 | Spts科技有限公司 | Deposition apparatus and associated methods |
| CN213295493U (en) * | 2020-08-21 | 2021-05-28 | 梭莱镀膜工业(江阴)有限公司 | Cooling system of magnetron sputtering magnetic rod |
| CN112304344A (en) * | 2020-09-24 | 2021-02-02 | 东北电力大学 | Micro magnetic grid for magnetic encoder manufactured by magnetron sputtering method and manufacturing method thereof |
| CN216039797U (en) * | 2021-07-29 | 2022-03-15 | 华映科技（集团）股份有限公司 | Magnetic control cathode structure for physical vapor deposition machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5415754A (en) | Method and apparatus for sputtering magnetic target materials | |
| CN101812667B (en) | Magnetron sputtering plating film cathode device | |
| US8319141B2 (en) | Cooling block forming electrode | |
| JPH06128741A (en) | Rotating cathode | |
| JPS5938385A (en) | Sputtering device | |
| JPH02185969A (en) | Cathode type magnetron apparatus and spattering forming | |
| CN107910075B (en) | A kind of novel Uniform Flow liquid lithium limiter structure in fusion facility | |
| US3914633A (en) | X-ray tube comprising a liquid-cooled anode | |
| JP2009149973A (en) | Sputtering apparatus and sputtering method | |
| WO1995012003A2 (en) | Method and apparatus for sputtering magnetic target materials | |
| US4486289A (en) | Planar magnetron sputtering device | |
| GB2147916A (en) | Cathodic evaporation of ferromagnetic targets | |
| CN115612994A (en) | Magnetron sputtering cathode | |
| US5277779A (en) | Rectangular cavity magnetron sputtering vapor source | |
| CN204529966U (en) | A kind of cooling backboard and magnetic-controlled sputtering coating equipment | |
| US20030209431A1 (en) | Magnetron sputtering source with improved target utilization and deposition rate | |
| CN109504948B (en) | Cylindrical sputtering cathode and ion extraction system | |
| CN204474752U (en) | A kind of magnetron sputtering equipment and cathode targets assembly thereof | |
| WO2022257826A1 (en) | Moving target for neutron production | |
| JP7173973B2 (en) | Electromagnet assembly manufacturing method | |
| JPH108246A (en) | Sputtering method and sputtering device | |
| JPH0159351B2 (en) | ||
| TWI325016B (en) | ||
| CN219260171U (en) | Magnetron sputtering target cooling system | |
| CN211947208U (en) | Electric lifting device for target material cooling |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 518108, Building A410, Fangzheng Science and Technology Industrial Park, North Side of Songbai Road, Longteng Community, Shiyan Street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Houlang Laboratory Technology Co.,Ltd. Address before: 4th Floor, A2, Peking University Science and Technology Park, Songbai Road, Shiyan, Baoan District, Shenzhen City, Guangdong Province, 518108 Applicant before: Shenzhen Yuandian Vacuum Equipment Co.,Ltd. Country or region before: China |
|
| CB02 | Change of applicant information |