KR20230145481A - Method for depositing material on a substrate - Google Patents

Abstract

A method of depositing at least one material on a substrate is described. The method includes first deposition, the first deposition comprising sputtering from a first rotating target and a second rotating target through an aperture, the aperture being adjustable and having a size that is smaller than the first size. The first rotating target has a first magnet assembly that provides plasma confinement in a first direction toward the second rotating target. The second rotating target has a second magnet assembly that provides plasma confinement in a second direction toward the first rotating target. The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value. The method includes a second deposition on top of the first deposition. The second deposition includes sputtering from a first rotating target and a second rotating target through an aperture, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in the fourth direction. At least one of the third or fourth directions deviates from being parallel to the substrate plane by at least a second value of an angle, where the second value is greater than the first value.

Description

Method for depositing material on a substrate

[0001] Embodiments of the present disclosure relate to deposition of materials on a substrate. Embodiments of the present disclosure relate particularly to the deposition of material on a substrate by sputtering from rotating targets.

[0002] Deposition of materials on a substrate has numerous applications in various technical fields. Sputtering is a method for deposition of materials on a substrate. Sputtering may involve bombarding a substrate, particularly a film located on the substrate, with energetic particles. Impact can adversely affect the properties of materials located on the substrate, especially films. To avoid impacts, facing target sputtering (FTS) systems with, for example, planar targets have been designed. In an FTS system, instead of pointing directly at the substrate, the targets point towards each other. However, the stability of sputtering plasma in conventional FTS systems is limited. The suitability of conventional FTS systems for use in mass production is compromised. Advanced FTS systems may include rotating targets to increase material utilization. Nonetheless, FTS systems are still generally associated with low deposition rates, leading to low productivity and risk of substrate surface contamination.

[0003] In view of the above, it would be beneficial to provide improved methods and systems for depositing material on a substrate.

[0004] According to one embodiment, a method of depositing at least one material on a substrate is provided. The method includes first deposition, the first deposition comprising sputtering from a first rotating target and a second rotating target through an aperture, the aperture being adjustable and having a size that is smaller than the first size. . The first rotating target has a first magnet assembly that provides plasma confinement in a first direction toward the second rotating target. The second rotating target has a second magnet assembly that provides plasma confinement in a second direction toward the first rotating target. The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value. The method includes a second deposition on top of the first deposition. The second deposition includes sputtering from a first rotating target and a second rotating target through an aperture, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in the fourth direction. At least one of the third or fourth directions deviates from being parallel to the substrate plane by at least a second value of an angle, where the second value is greater than the first value.

[0005] According to one embodiment, a controller configured to be connectable to a system for depositing materials is provided. The controller is configured to control the system to perform methods according to embodiments described herein.

[0006] According to one embodiment, a method of depositing at least one material on a substrate is provided. The method includes a first deposition. The first deposition includes sputtering from a first rotating target and a second rotating target through a first aperture, the first rotating target comprising a first magnet assembly providing plasma confinement in a first direction toward the second rotating target. and the second rotating target has a second magnet assembly that provides plasma confinement in a second direction toward the first rotating target. The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value. The method includes a second deposition on top of the first deposition. The second deposition includes sputtering from at least a third rotating target through a second aperture, the second aperture having a larger size than the first aperture, and the third rotating target providing plasma confinement in a third direction. and a third magnet assembly. The third direction deviates from being parallel to the substrate plane by at least a second value of an angle, the second value being greater than the first value.

[0007] According to one embodiment, a system for depositing at least one material on a substrate is provided. The system includes a first target support for a first rotating target, a first magnet assembly connectable to the first target support, a second target support for a second rotating target, and a second magnet assembly connectable to the second target support. do. The first magnet assembly and the second magnet assembly, when connected, are oriented away from being parallel to the substrate plane of the substrate by an angle less than a first value. The system further includes a third target support for the third rotation target, a third magnet assembly connectable to the third target support, the third magnet assembly being parallel to the substrate plane by at least a second value of the angle when connected. It points in a direction away from , and the second value is greater than the first value. The system includes sputtering from at least a third rotating target and a first aperture provided in a shield or between two shields such that the sputtered material from the first rotating target and the second rotating target can reach the substrate. It further includes a second aperture provided in the shield or between two shields to allow the material to reach the substrate, the second aperture having a larger size than the first aperture.

[0008] The present disclosure should be understood to encompass devices and systems for performing the disclosed methods, including device portions for performing each described method aspect. Method aspects may be performed, for example, by hardware components, by a computer programmed with appropriate software, or by any combination of the two. The present disclosure should also be understood to encompass methods for operating the described devices and systems. Methods of operating the described devices and systems include method aspects for performing every respective function of an individual device or system.

[0009] To enable the above-mentioned features to be understood in detail, a more specific description of the claimed subject matter briefly summarized above may be provided below with reference to embodiments. The accompanying drawings relate to embodiments and are described below.
1A and 1B are schematic cross-sectional views of systems for depositing materials, according to embodiments described herein.
2 is a chart illustrating a method of depositing material on a substrate, according to embodiments described herein.
3 is a chart illustrating a method of depositing material on a substrate, according to embodiments described herein.
4 is a schematic cross-sectional view of a system for depositing material, according to embodiments described herein.
Figure 5 is a schematic cross-sectional view of a system for depositing material, according to embodiments described herein.

[0010] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the drawings. Within the following description of the drawings, like reference numbers indicate like components. In general, only differences for individual embodiments are described. Each example is provided by way of illustration and is not intended to be limiting. Additionally, features illustrated or described as part of one embodiment may be used with or against other embodiments to create a still additional embodiment. It is intended that this description cover such modifications and variations.

[0011] 1A and 1B are schematic cross-sectional views of a system for depositing at least one material, according to embodiments described herein. The system may be particularly suitable for low-throughput applications, such as applications in R&D environments. System 100 is for depositing at least one material on a substrate 102. The substrate 102 may be provided on a substrate holder 104 . System 100 includes a first target support for a first rotation target 110 and a second target support for a second rotation target 120 . The first rotation target and the second rotation target may be respectively mounted on individual target supports. In embodiments, the system includes a first rotation target and a second rotation target.

[0012] System 100 includes a first magnet assembly 112 connectable to a first target support. In particular, when the first magnet assembly 112 is connected and the first rotation target 110 is mounted on the first target support, the first magnet assembly 112 is positioned within the first rotation target 110. The system further includes a second magnet assembly 122 connectable to the second target support. In particular, when the second magnet assembly 122 is connected and the second rotation target 120 is mounted on the second target support, the second magnet assembly 122 is positioned within the second rotation target 120.

[0013] Generally, the target support portion of the rotation target may consist of or include at least one end block. The end block may include a target mounting flange configured to support a rotating target while enabling rotation relative to the end block. The end block may include at least one utility shaft configured to support at least one magnet assembly. The end block may include a fitting for delivering cooling fluid to the rotating target.

[0014] The plasma associated with sputter deposition may be trapped between the first rotating target and the second rotating target. The plasma confinement of the first magnet assembly and the plasma confinement of the second magnet assembly may at least partially overlap. In particular, the first rotation target and the second rotation target are neighboring targets. More specifically, there are no additional targets positioned in the area between the first and second rotation targets.

[0015] In the context of the present disclosure, plasma confinement should be understood in particular as a plasma confinement zone. The plasma confinement zone can be understood as a zone in which the amount of plasma is increased compared to the environment, in particular due to the influence of the magnetic field of the magnet assembly located on the rotating target. In the context of the present disclosure, providing plasma confinement in a specific direction should be understood in particular as providing plasma confinement such that the main direction of the plasma confinement extends in a specific direction.

[0016] Particularly in embodiments where the magnet assembly includes a permanent magnet, providing plasma confinement in a particular direction may be understood as providing the magnet assembly in a position such that the magnet assembly faces a particular direction. In particular, the axis of symmetry of the magnet assembly points in a particular direction. For example, providing plasma confinement in a direction towards a rotating target, eg a neighboring rotating target, may be understood as the magnet assembly being directed towards the rotating target.

[0017] According to some embodiments of the present disclosure, plasma confinement is provided on a plasma racetrack, particularly a closed plasma racetrack. Plasma confinement associated with one magnet assembly provides a closed loop. A closed loop can, for example, be provided on one target, ie on which a magnet assembly is provided.

[0018] In general, a magnet assembly positioned within a rotating target can enable magnetron sputtering. As used herein, “magnetron sputtering” refers to sputtering performed using a rotating target within which a magnetron, i.e., a magnet assembly, is positioned. A magnet assembly should be understood in particular as a unit capable of generating a magnetic field. The magnet assembly may include one or more permanent magnets. Permanent magnets can be arranged in a rotating target such that free electrons are trapped within the generated magnetic field, for example in a closed loop or racetrack. The magnet assembly may be provided within a backing tube of the rotating target or within a target material tube. Rotating targets described herein may be a cathode or part of a cathode. The system can be configured for DC sputtering. In embodiments, the system may be configured for pulsed DC sputtering.

[0019] A rotating target should be understood in particular as a rotatable sputtering target, such as a cylindrical sputtering target. In particular, the rotating target may be a rotatable cathode containing the material to be deposited. The rotating target may be connected to a shaft configured to rotate in at least one operating state of the system. The rotating target may be connected to the shaft directly or indirectly via a connecting element. According to some embodiments, rotating targets within the deposition chamber may be interchangeable. Replacement of the rotating targets may be possible after the material to be sputtered has been consumed.

[0020] In rotating targets, the removal of material from the target during magnetron sputtering has improved uniformity compared to magnetron sputtering of planar targets. In the case of rotating targets, uniformity is caused, in particular, by the movement of the target surface relative to the magnetic field due to the rotation of the targets. The amount of material collected on the target surface may be reduced or even eliminated. Arcing can be reduced or even eliminated. Material flaking can be reduced or eliminated. Stability, especially long-term stability of the deposition process, can be increased. The use of a facing target sputtering concept for mass production may become possible. In particular, collection efficiency can be increased due to the effect that an increased amount of material deposited on the target is sputtered again. Collection efficiency should be understood specifically as the amount of sputtered material captured by the substrate relative to the total amount of material released by the sputtering target. Material utilization can be increased. Material waste and costs can be reduced.

[0021] In embodiments, the first magnet assembly 112 includes at least three magnetic poles directed toward the plasma confinement 114 provided by the first magnet assembly. The second magnet assembly 122 may include at least three magnetic poles directed toward the plasma confinement 114 provided by the second magnet assembly 122 . 1A and 1B, the first magnet assembly 112 and the second magnet assembly 116 each include three magnetic poles directed toward the plasma confinement provided by each magnet assembly.

[0022] Rotating targets 110 and 120 may be positioned in the deposition chamber 150 . In particular, the deposition chamber 150 is a vacuum chamber. A first additional chamber and a second additional chamber may be provided adjacent to the deposition chamber (not shown). According to some embodiments, which may be combined with other embodiments described herein, depositing material on a substrate may be provided as a dynamic deposition process. For example, the substrate may move past a first rotation target and a second rotation target while material is being deposited. Deposition chambers or zones of the vacuum processing system may be separated from additional chambers or other zones by valves.

[0023] According to some embodiments, the process gas may include at least one of a noble gas or a reactive gas. For example, the noble gas may be argon, krypton, xenon, or combinations thereof. For example, the reactive gas may be oxygen, nitrogen, hydrogen, ammonia (NH3), ozone (O3), activated gas, or combinations thereof.

[0024] As used herein, the term “substrate” includes both inflexible and flexible substrates. Examples of inflexible substrates include glass substrates, glass plates, wafers, or slices of transparent crystal such as sapphire. Examples of flexible substrates include webs or foils. According to further embodiments, which may be combined with other embodiments described herein, transport of the substrate and/or substrate carrier may each be provided by a magnetic levitation system. The carrier can be levitated or held by magnetic forces without or with reduced mechanical contact and moved by magnetic forces.

[0025] Each of the rotation targets may be a cathode. The rotating cathode may be electrically connected to a DC power supply. For example, components such as the housing of the deposition chamber or at least one shield within the deposition chamber may be provided with a mass potential. The components can act as anodes. Optionally, the system may further include anodes. In embodiments that may be combined with other embodiments described herein, at least one or more of the rotation targets may be electrically connected to a respective individual power supply. In particular, each of the rotation targets can be connected to a respective individual power supply. For example, a first rotation target can be connected to a first power supply and a second rotation target can be connected to a second DC power supply.

[0026] Particularly in embodiments where non-reactive sputtering is performed, the material to be deposited on the substrate may be sputtered from either the first or the second rotating target. This should be understood in particular as allowing particles expelled from the surface of the first or second rotating target to form the deposited material. Particularly in embodiments where reactive sputtering is performed, particles of the first material may be expelled from the surface of any of the first or second rotating targets. Particles of the first material may combine with the second material to form a material to be deposited on the substrate. The first material may be understood to be a component of the deposited material. The gas surrounding the first rotating target and the second rotating target may include a second material.

[0027] In embodiments that may be combined with other embodiments described herein, the plasma associated with sputtering and the substrate are moved relative to each other during deposition of material on the substrate. For example, the substrate may oscillate back and forth between two positions during deposition.

[0028] The system further comprises an adjustable aperture 115 provided in the shield or between at least two shields, in particular as a gap between at least two shields. Shields provided in the deposition chamber 150 may protect the rear portion of the deposition chamber. As shown in the depicted embodiment, an aperture 115 may be provided between the first shield 106 and the second shield 116. In particular, assuming that the first rotation target 110 is mounted on the first target support, the first shield 106 is provided between the first rotation target 110 and the deposition area. The deposition area should be understood in particular as the area in which the substrate 102 is located during deposition. Similarly, a second shield 116 may be provided between the second rotation target 120 and the deposition area.

[0029] In the context of the present disclosure, the aperture size should be understood in particular as the size of the gap between the shields, and more particularly as the distance between the shields. The size of aperture 115 may be adjustable by changing the distance between the shields. At least one of the first shield 106 or the second shield 116 may in particular be movable in a direction parallel to the substrate plane of the substrate 102 . In particular, the size of the aperture 115 can be adjusted by moving at least one of the shields.

[0030] In embodiments, first shield 106 includes a first shield magnet assembly 108. The second shield 116 may include a second shield magnet assembly 118 . The second shield magnet assembly 118 may face the first shield magnet assembly 116 . Each of the magnetic poles of the first shield magnet assembly facing the second shield magnet assembly may have an opposite polarity to the respective nearest magnetic pole of the second shield magnet assembly. The magnetic field in the aperture 115 between the first shield 106 and the second shield 116 may be the field of a magnetic lens. In a magnetic field, charged particles can be deflected. The normal component of the momentum of the charged particles to the substrate surface can be reduced. The normal component of the momentum is responsible for the possible damage, especially the possible depth of damage, to the substrate or a layer positioned on the substrate by the charged particle. Shields containing magnetic assemblies can mitigate damage to the substrate, particularly damage to sensitive coatings provided on the substrate.

[0031] The system further includes a controller configured to control the system to perform a method of depositing at least one material on a substrate as described herein. The method may be particularly suitable for batch-type dynamic deposition systems.

[0032] In embodiments, the at least one material is or includes a metal, metal oxide (MOx), or transparent conductive oxide (TCO). The metal may be, for example, Ag, MgAg, Al, Yb, Ca or Li. The metal oxide may be, for example, IGZO, AlO, MoO or WOx. The TCO may be, for example, indium zinc oxide (IZO), indium tin oxide (ITO) or aluminum doped zinc oxide (AZO).

[0033] In particular, methods according to the present disclosure include a first deposition. An example of the configuration of system 100 during a first deposition is shown in FIG. 1A. The first deposition involves sputtering from a first rotating target and a second rotating target through an adjustable aperture 115, the aperture having a size less than the first size. The first magnet assembly 112 specifically provides plasma confinement 114 in a first direction toward the second rotating target 120 during deposition of material. The second magnet assembly 122 provides plasma confinement 114 particularly in a second direction toward the first rotating target 110 during deposition of material. That is, during the first deposition, the magnet assemblies may be in a face-to-face target sputtering configuration.

[0034] In embodiments, the aperture may be smaller than the first size. The first size is for example 40 mm, 70 mm, 100 mm or 130 mm. During the first deposition, the aperture 115 may have a size of, for example, 50 mm, as shown in FIG. 1A. Typically, the aperture may have a size of, for example, 30 mm, 50 mm or 70 mm during the first deposition. The aperture may have a size greater than 5 mm, 15 mm, or 20 mm during the first deposition, for example. The size of the aperture may be constant during the first deposition or may change, in particular increase.

[0035] The feature that the aperture has a size smaller than the first size during the first deposition has the advantage that spatial variations in the deposition rate on different parts of the substrate can be reduced. In particular, it can be avoided that material is simultaneously deposited on different parts of the substrate at very different deposition rates. For example, when the plasma confinement directions face each other directly, the area of the substrate facing the central region between the rotating targets may be exposed to much higher deposition rates than other portions of the substrate that would otherwise not be directly facing each other. An aperture having a size smaller than the first size during the first deposition is advantageous for depositing material with a uniform thickness.

[0036] The feature that the plasma confinement is provided in a first direction towards the second rotating target and in a second direction towards the first rotating target has the advantage that soft deposition can be achieved. For example, impact of the substrate by high-energy particles can be reduced. Damage to the substrate, particularly the coating on the substrate, can be mitigated. This is particularly advantageous with regard to deposition on sensitive substrates or layers, more particularly deposition on a substrate with a sensitive coating. The first deposition can be understood as a protective deposition or a seed deposition.

[0037] The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value. In the context of the present disclosure, “substrate plane” refers in particular to the plane of the substrate 102 on which material is deposited. The first value may be, for example, 40, 30, 20 or 10°. As shown in Figure 1A, the first and second directions may be parallel to the substrate plane. That is, the angle of deviation from the orientation parallel to the substrate plane may be 0°. In embodiments, the first and second directions deviate from being parallel to the substrate plane by an angle of less than 40°, 30°, or 20° toward the substrate and less than 10° away from the substrate.

[0038] An advantageous configuration can be achieved in which at least a satisfactory amount of material is deposited on the substrate while the impact of the substrate by energetic particles is minimized. If any of the first and second directions deviate significantly from being parallel to the substrate plane in a direction toward the substrate, adverse impact of the substrate by energetic particles may ensue. If any of the first and second directions deviate significantly from being parallel to the substrate plane in a direction away from the substrate, unsatisfactorily low deposition rates on the substrate may ensue. Additionally or alternatively, waste of target material may occur.

[0039] The first direction may correspond to a first angle, in particular a first polar angle in a polar coordinate system. A reference point in polar coordinates, in particular a pole, can be positioned on the rotation axis of the rotation target. The reference direction of the polar coordinate system may be perpendicular to the rotation axis of the rotation target. The deviation of the first direction from being parallel to the substrate plane may refer to the polar coordinate system of the first rotation target. The departure of the second direction from being parallel to the substrate plane may refer to the polar coordinate system of the second rotation target.

[0040] In embodiments, the magnets included in each of the magnet assemblies of the system may deviate from being parallel to each other. That is, the magnets of each of the system's magnet assemblies can have an enclosing opening angle. In particular, at least one of the magnets may deviate from being parallel to the central axis or axis of symmetry of the magnet assembly by an angle greater than 3, 6, or 10°, for example. At least one magnet may be offset from being parallel to the central axis or axis of symmetry by an angle of less than 30°, 25°, or 15°, for example.

[0041] For example, when depositing the electrodes of an OLED, the material may have to be deposited in a very sensitive layer. For some materials, particularly transparent conducting oxides or metal oxides, soft deposition via conventional techniques such as evaporation may not be possible. Embodiments of the present disclosure use a face-to-face target design to solve this. By using rotating targets in accordance with embodiments of the present disclosure, target surface contamination can be alleviated and system up-times can be increased. Additionally, through soft deposition as described herein, the number of high energy particles such as sputter particles, negative ions and electrons that impact the substrate can be reduced. Changes in temperature on or near the substrate surface can be reduced. In particular, lower temperatures on or near the substrate surface can be achieved.

[0042] The method includes a second deposition on top of the first deposition. In particular, the second deposition provides material in a region above the material provided through the first deposition. In this context, the term “above” particularly relates to a configuration in which the substrate is located below the material provided through the first deposition. Typically, at least one additional deposition may be provided between the first and second depositions. During at least one additional deposition, the plasma confinement directions and the size of the aperture may be different than during the first and/or second deposition. In embodiments, the second deposition may be provided directly on top of the first deposition.

[0043] An example of a configuration of system 100 during a second deposition is shown in FIG. 1B. The second deposition includes sputtering from a first rotating target and a second rotating target through an aperture 115, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly 112 provides plasma confinement 114 in the third direction. The second magnet assembly 122 provides plasma confinement 114 in the fourth direction. At least one of the third or fourth directions deviates from being parallel to the substrate plane by at least a second value of an angle, where the second value is greater than the first value.

[0044] In embodiments, the aperture may be as large as or larger than the second size. The second size may be, for example, 50 mm, 90 mm, 130 mm or 180 mm. The second size may be, for example, at least 5%, 25%, or 35% larger than the first size. Sputtering through apertures with larger sizes can lead to increased deposition rates. During the second deposition, the aperture 115 may have a size of, for example, 140 mm, as shown in FIG. 1B. Typically, the aperture during the second deposition may have a size of, for example, 120 mm, 140 mm, or 160 mm. In particular, the first size is associated with a first surface area of the aperture and the second size is associated with a second surface area of the aperture. More specifically, the second surface area is larger than the first surface area. The aperture may have a size smaller than 220°, 165°, or 125 mm during the second deposition, for example.

[0045] In embodiments, as noted above, at least one of the third or fourth directions may deviate from being parallel to the substrate plane by at least a second value of an angle. The second value may be, for example, 15°, 30°, 50° or 70°. The second value may be at least 5%, 25%, or 35% greater than the first value, for example. The first value relates in particular to the first and second directions as defined above. Both the third and fourth directions may deviate from being parallel to the substrate plane by at least a second value of an angle. As shown in Figure 1B, the third and fourth directions may deviate from being parallel to the substrate plane by an angle of, for example, 60°. In general, the directions may deviate from being parallel to the substrate plane by an angle of, for example, 50°, 60°, or 70°. The directions may deviate from being parallel to the substrate plane by an angle of less than 100°, 95°, or 85°, for example.

[0046] By changing the plasma confinement directions, ie the directions in which the plasma confinement is provided, the deposition rate can be increased. The direction of plasma confinement can be varied, in particular by changing the position of the magnet assembly providing plasma confinement, more particularly by rotating the magnet assembly. Changing the plasma confinement directions can also be understood as changing the sputter direction. The aperture size can be increased simultaneously with changing the plasma confinement directions. By increasing the size of the aperture, the deposition rate can be increased.

[0047] When the plasma confinement directions have a large component pointing toward the substrate, the homogeneity of the deposition rate can be relatively high compared to, for example, when the plasma confinement directions are directed toward each other in a direction parallel to the substrate. Especially when the plasma confinement direction has a large component facing the substrate, material can be deposited to a uniform thickness without limiting the aperture size to small values. High deposition rates can be achieved without compromising the thickness distribution of the deposited material.

[0048] In particular, the material deposited during the first or initial deposition on the OLED material can act as protection, especially as a protective layer, before deposition is undertaken at higher material throughput, i.e. at higher deposition rates. Compared to deposition by exclusively face-to-face target sputtering, deposition times can be reduced. Productivity can be increased. Substrate exposure to ultraviolet radiation from the deposition environment, particularly residual gas contaminants and sputtering, can be lowered.

[0049] In embodiments, the plasma confinement directions of the first and second magnet assemblies are changed gradually or stepwise between the first and second depositions. In particular, the positions of the first magnet assembly and the second magnet assembly are changed gradually or stepwise between the first deposition and the second deposition. While the plasma confinement direction is changed, material may be deposited on the substrate, particularly continuously. Simultaneously with a change in the plasma confinement directions the aperture size can be changed, in particular increased.

[0050] In embodiments, the aperture, particularly the shields providing the aperture, is electrically isolated. More specifically, the shields can have a defined potential. The shields may be cooled to a temperature lower than 85°C, 80°C or 60°C, for example. The temperature may be higher than 20°C, 30°C or 40°C, for example. Shields may include flat surfaces. At least one surface of the shields may be made particularly rough to avoid flaking.

[0051] The present disclosure further relates to a controller configured to be connectable to a system for depositing materials as described herein. In particular, the controller is configured to control the system to perform a method of depositing at least one material as described herein.

[0052] The controller may include a central processing unit (CPU), memory, and support circuits, for example. To facilitate control of the system, the CPU may be any type of general-purpose computer processor that can be used in industry to control various components and sub-processors. The memory is coupled to the CPU. The memory or computer-readable medium may be one or more readily available memory devices, such as random access memory, read-only memory, floppy disk, hard disk, or any other form of digital storage, either local or remote. Support circuits may be coupled to the CPU to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry, and related subsystems.

[0053] Control instructions are generally stored in memory as software routines or programs. Additionally, a software routine or program may be stored and/or executed by a second CPU (not shown) located remotely from the hardware controlled by the CPU. The software routine or program, when executed by the CPU, transforms the general purpose computer into a special purpose computer (controller) that controls the system for depositing materials according to any of the embodiments of the present disclosure.

[0054] The methods of this disclosure may be implemented as a software routine or program. At least some of the method operations disclosed herein may be performed via hardware, as well as by a software controller. Accordingly, embodiments may be implemented in software, such as running on a computer system, in hardware, as an application specific integrated circuit or other type of hardware implementation, or in a combination of software and hardware. The controller may execute or perform a method of depositing material on a substrate according to embodiments of the present disclosure. The methods described herein can be practiced using computer programs, software, computer software products, and associated controllers that include a CPU, memory, user interface, and corresponding system for depositing material. You can have input and output devices that communicate with other components.

[0055] 2 is a chart illustrating a method of depositing material on a substrate, according to embodiments described herein. The method may be performed, for example, by a system as described above in relation to FIGS. 1A and 1B. The method 200 includes, at block 202, a first deposition, the first deposition comprising sputtering from a first rotating target and a second rotating target through an aperture, the aperture being adjustable and the first rotating target It has a size smaller than its size. The first rotating target has a first magnet assembly that provides plasma confinement in a first direction toward the second rotating target. The second rotating target has a second magnet assembly that provides plasma confinement in a second direction toward the first rotating target. The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value.

[0056] The method includes adjusting the size of the aperture at block 204 to at least a second size, where the second size is greater than the first size. The magnet assemblies are configured such that a first magnet assembly provides plasma confinement in a third direction and a second magnet assembly provides plasma confinement in a fourth direction. At least one of the third or fourth directions deviates from being parallel to the substrate plane by at least a second value of an angle, where the second value is greater than the first value. Particularly in embodiments where the magnet assembly comprises a permanent magnet, configuring the magnet assembly may be understood as providing the magnet assembly at a particular position within the rotation target, and in particular at a particular orientation.

[0057] The method includes, at block 206, depositing a second deposition on top of the first deposition. The second deposition includes sputtering from a first rotating target and a second rotating target through an aperture, the aperture having a second size. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in the fourth direction.

[0058] Figure 4 is a schematic cross-sectional view of a system for depositing at least one material, according to embodiments described herein. The system may be particularly suitable for applications in high-throughput mass production. System 300 is for depositing at least one material on substrate 102. The features described above with respect to FIGS. 1 and 2 may be applied mutatis mutandis to the systems and methods described below with respect to FIGS. 3 to 5 .

[0059] System 300 includes a first target support for a first rotating target 110 . The first rotation target 110 may be mounted on the first target support part. The system includes a first magnet assembly 112 connectable to a first target support. In particular, when the first magnet assembly 112 is connected and the first rotation target 110 is mounted on the first target support, the first magnet assembly 112 is positioned within the first rotation target 110. In embodiments, system 300 includes a first rotation target 110 .

[0060] System 300 includes a second target support for a second rotation target 120 and a third target support for a third rotation target 330 . The second and third rotation targets may be respectively mounted on individual target supports. In embodiments, the system includes second and third rotation targets.

[0061] The system includes a second magnet assembly 122 connectable to the second target support. Similar to the first magnet assembly, when the second magnet assembly 122 is connected to the second target support, the second magnet assembly 122 can be positioned within the second rotation target 120. The system further includes a third magnet assembly 332 connectable to the third target support. Similar to the first magnet assembly, when the third magnet assembly 332 is connected to the third rotation target support, the third magnet assembly 332 can be positioned within the third rotation target 330.

[0062] In embodiments, the first magnet assembly and the second magnet assembly, when connected, are oriented away from being parallel to the substrate plane of the substrate 102 by an angle less than a first value. In the context of the present disclosure, the connected state of the magnet assembly should be understood in particular as the magnet assembly being connected to the target support. The third magnet assembly 332, when connected, may be oriented away from being parallel to the substrate plane by at least a second value of the angle. The second value is greater than the first value. In the connected state, the position, particularly the orientation, of the magnet assemblies can be fixed.

[0063] As mentioned above, the first magnet assembly and the second magnet assembly are oriented away from being parallel to the substrate plane by an angle less than a first value. The first value may be, for example, 40°, 30°, 20° or 10°. In particular, the first magnet assembly faces a first direction and the second magnet assembly faces a second direction. As shown in Figure 4, the first and second directions may be parallel to the substrate plane. That is, the angle of deviation from the orientation parallel to the substrate plane may be 0°. In embodiments, the first and second directions deviate from being parallel to the substrate plane by an angle of less than 40°, 30°, or 20° toward the substrate and less than 10° away from the substrate. Additionally, as noted above, the third magnet assembly may be oriented away from being parallel to the substrate plane by at least an angle less than the second value. The second value may be, for example, 15°, 30°, 50° or 70°. The second value may be at least 5%, 25%, or 35% greater than the first value, for example.

[0064] In embodiments, system 300 includes a first aperture provided in the shield or between two shields to allow sputtered material from the first and second rotating targets to reach the substrate 102. 115). As shown in the depicted embodiment, a first aperture 115 may be provided between the first shield 106 and the second shield 116.

[0065] In embodiments, the system 300 includes a second aperture 335 provided in the shield or between two shields to allow sputtered material from at least the third rotating target 330 to reach the substrate 102. Includes. The second aperture 335 has a larger size than the first aperture 115. As shown in the depicted embodiment, a second aperture 335 may be provided between the second shield 116 and the third shield 126. The sizes of the first aperture and the second aperture may be fixed. In particular, the positions of the first shield, second shield, and third shield can be fixed. A structurally simple deposition system can be provided.

[0066] In embodiments, the first aperture is smaller than the first size. The first size may be, for example, 40 mm, 70 mm, 100 mm or 130 mm. The first aperture may have a size of, for example, 30 mm, 50 mm, or 70 mm. The first aperture may have a size greater than 5 mm, 15 mm, or 20 mm, for example. The second aperture may be at least as large as the second size. The second size may be, for example, 50 mm, 90 mm, 130 mm or 180 mm. The second size may be, for example, at least 5%, 25%, or 35% larger than the first size. Sputtering through apertures with larger sizes can lead to increased deposition rates. The second aperture may have a size of, for example, 120 mm, 140 mm, or 160 mm. The second aperture may have a size smaller than 220 mm, 165 mm, or 125 mm, for example.

[0067] In embodiments, positions or orientations of the system's magnet assemblies, such as first, second and third magnet assemblies, may be configurable. Additionally or alternatively, the sizes of the apertures of the system, such as the first aperture and the second aperture, may be configurable. The advantage is that the system can be adjusted, depending, for example, on the sensitivity of the substrate used and, in particular, on the sensitivity of the specific material to be deposited at specific process parameters.

[0068] In embodiments, system 300 includes at least one additional rotation target. Overall, the system may include more than 3, 5 or 7 rotation targets, for example. The rotation targets of the system can be understood as forming an array of rotation targets. For example, the system shown in Figure 4 includes eight rotation targets.

[0069] In general, the system may include at least one pair of rotation targets configured or configurable for the FTS with plasma confinement directions at least substantially parallel to the substrate plane. In the illustrated embodiment, one such pair formed by a first rotation target 110 and a second rotation target 120 is shown. Soft deposition may be provided as described herein.

[0070] The system may include at least one pair of rotation targets configured or configurable for the FTS with a plasma confinement direction that deviates from being parallel to the substrate plane by an angle of less than 90°, 85°, 65°, or 50°, for example. there is. In the depicted embodiment, two such pairs are shown. In particular, one of the pairs includes a third rotation target 330 and a fourth rotation target 340. Increased deposition rates can be provided while at least partially maintaining the properties of soft deposition.

[0071] The system may further include at least one rotating target configured or configurable for sputtering with a plasma confinement direction at least substantially toward the substrate. In the depicted embodiment, two such rotation targets are shown, a seventh rotation target 370 and an eighth rotation target 380. Particularly high deposition rates can be provided.

[0072] The system may include at least one additional aperture. In particular, for each pair of rotating cathodes, the system may include an aperture to allow material sputtered from the pair of rotating cathodes to reach the substrate. In particular, the sizes of the additional apertures may be configured or configurable to appropriate values for specific configurations of rotation targets. More specifically, each aperture is provided in a shield or between at least two shields. Each of the shields may include at least one shield magnet assembly.

[0073] For example, as shown in FIG. 4 , the system may include a third aperture 355 adjacent to a second aperture 335 . The system may include a fourth aperture 375 adjacent to a third aperture 355 . In particular, the third aperture 355 is provided between the third shield 126 and the fourth shield 136. The fourth aperture 375 may be provided between the fourth shield 136 and the fifth shield 146. The third aperture may be, for example, at least 5%, 25%, or 35% larger than the second aperture. The fourth aperture may be at least 5%, 25%, or 35% larger than the third aperture, for example.

[0074] In embodiments, system 300 further includes a controller configured to control the system to perform a method of depositing at least one material on a substrate as described herein. The method may be particularly suitable for in-line dynamic deposition systems.

[0075] In particular, methods according to the present disclosure include a first deposition. The first deposition includes sputtering from the first rotating target and the second rotating target through the first aperture 115. The first rotating target 110 has a first magnet assembly 112 that provides plasma confinement 114 in a first direction toward the second rotating target 120 . The second rotating target 120 has a second magnet assembly 122 that provides plasma confinement 114 in a second direction toward the first rotating target 110 . The first and second directions deviate from being parallel to the substrate plane of the substrate 102 by an angle less than a first value. The first deposition may be understood as a protective deposition or a seed deposition, analogously to that described in detail above, in particular in relation to FIGS. 1 and 2 .

[0076] The method includes a second deposition on top of the first deposition. In particular, the second deposition provides material in a region above the material provided through the first deposition. In this context, the term “above” particularly relates to a configuration in which the substrate is located below the material provided through the first deposition. Typically, at least one additional deposition may be provided between the first and second depositions. The magnet assemblies of the targets used in at least one additional deposition may provide plasma confinement directions that are different from the plasma confinement directions associated with the first or second deposition. The at least one additional deposition may include sputtering through an individual aperture having a different size than the first and/or second apertures associated with the second deposition. In embodiments, the second deposition may be provided directly on top of the first deposition.

[0077] The second deposition includes sputtering from at least the third rotating target 330 through the second aperture 335. The second aperture 335 has a larger size than the first aperture 115. The third rotating target 330 has a third magnet assembly 332 that provides plasma confinement 114 in a third direction. The third direction deviates from being parallel to the substrate plane by at least a second value of the angle. The second value is greater than the first value.

[0078] Depositing at least one material on substrate 102 may be provided as a dynamic deposition process. In particular, the substrate 102 may move past the rotating target while material is being deposited. More specifically, the substrate 102 can move in one direction, such that the substrate 102 can move past the first rotation target 110 before moving past the second rotation target 120 . Deposition chamber 150 may be separated from additional chambers (not shown) by a valve.

[0079] The method may include sputtering the layer stack. The layer stack may include a metal and a transparent conductive oxide (TCO) deposited on the metal. For example, the layer stack may include Ag deposited on IZO. During sputtering of metals, the magnet assemblies may be in a facing target sputtering (FTS) configuration to provide a particularly soft deposition. Soft deposition can be understood as a deposition according to the features of the first deposition of the method. In particular, the magnet assemblies in the FTS configuration may be configured such that the plasma confinement direction of the magnet assemblies deviates from being parallel to the substrate plane by an angle, e.g., less than 90°, 85°, 65°, or 50°, or even at least relative to the substrate plane. It can be understood as being substantially parallel.

[0080] The TCO may be deposited partially with magnet assemblies in an FTS configuration and partially with magnet assemblies in a direct sputter configuration. Partially depositing the TCO with magnet assemblies in FTS configuration can be understood as performing seed deposition. In particular, the material deposited during seed deposition is part of the final TCO layer after completion of the entire deposition.

[0081] The layer stack can include a first metal layer and a second metal layer deposited on the first metal layer. The layer stack may further include a TCO deposited on a second metal. As an example, the first metal may be Li or Yb, the second metal may be Ag, and the TCO may be IZO.

[0082] The layer stack can include a first metal oxide layer and a second metal oxide layer. The first and second metal oxides may be different materials or the same materials but with different stoichiometry. As an example, the first and second metal oxide layers can each be stoichiometrically different IGZO layers.

[0083] The layer stack can include a first TCO layer, a metal layer deposited on the first TCO layer, and a second TCO layer deposited on the metal layer. For example, the first TCO layer and metal layer can be deposited with magnet assemblies in FTS configuration. The second TCO layer may be deposited partly in an FTS configuration and partly in a direct sputtering configuration.

[0084] In embodiments, metals are deposited exclusively into the magnet assembly in FTS configuration. Metal oxides can be deposited into magnet assemblies, for example, in FTS configuration. Alternatively, the metal oxides may be deposited partially onto the magnet assemblies in an FTS configuration and partially into the magnet assemblies in a direct sputter configuration.

[0085] In the context of the present disclosure, depositing a material should be understood in particular as depositing a single layer. A single layer can be partially deposited using different deposition system configurations. A single layer may be partially deposited via at least one different deposition source. Within a single layer, material properties can be at least substantially homogeneous.

[0086] Figure 5 is a schematic cross-sectional view of a system for depositing materials, according to an embodiment described herein. System 400 is a modification of the system shown in Figure 4. As can be seen, system 400 may include, in addition to second magnet assembly 122, a fourth magnet assembly 442 connectable to the second target support. In particular, when the fourth magnet assembly 442 is connected and the second rotation target 120 is mounted on the second target support, the fourth magnet assembly 442 is positioned within the second rotation target 120. The fourth magnet assembly 442 may be configured or configurable to provide plasma confinement in a direction toward the third rotating target 330 .

[0087] Similarly, in addition to the third magnet assembly 332, the system may include a fifth magnet assembly 452 connectable to the third target support. By including rotating targets with more than one magnet assembly, deposition rates can be increased compared to systems in which only one magnet assembly is positioned on each rotating target. The increase comes in particular from the creation of two racetracks. In particular, the two racetracks are located on different sections or even on opposite sides of the target. The remaining features of the system may correspond at least substantially to those described above in relation to FIG. 4 .

[0088] 3 is a chart illustrating a method of depositing at least one material, according to embodiments described herein. The method may be performed, for example, by the systems described above in relation to FIGS. 4 and 5. The method may be particularly suitable for batch-type dynamic deposition systems. Method 500 is for depositing at least one material on a substrate. The at least one material may include a metal, metal oxide, or transparent conductive oxide.

[0089] Method 500 includes a first deposition at block 502. The first deposition includes sputtering from a first rotating target and a second rotating target through a first aperture. The first rotating target has a first magnet assembly that provides plasma confinement in a first direction toward the second rotating target. The second rotating target has a second magnet assembly that provides plasma confinement in a second direction toward the first rotating target. The first and second directions deviate from being parallel to the substrate plane of the substrate by an angle less than the first value. The first value may be, for example, 40, 30, 20 or 10°.

[0090] The method may include moving the substrate, at block 504, in a direction parallel to a substrate plane of the substrate. In particular, the material deposited during the first deposition on the substrate can be transported to a different location where subsequent deposition can occur.

[0091] The method includes, at block 506, depositing a second deposition on top of the first deposition, particularly on top of the first deposition. The second deposition includes sputtering from at least a third rotating target through a second aperture. The second aperture has a larger size than the first aperture. The third rotating target has a third magnet assembly that provides plasma confinement in a third direction. The third direction deviates from being parallel to the substrate plane by at least a second value of the angle. The second value is greater than the first value.

[0092] Embodiments described herein may be utilized for display PVD, i.e., sputter deposition on large area substrates for the display market. According to some embodiments, the large area substrates or individual carriers, where the carriers have multiple substrates, can have a size of at least 0.67 m2. Typically the size may be from about 0.67 m² (0.73x0.92 m - GEN 4.5) to about 8 m², more typically from about 2 m² to about 9 m² or even up to 12 m². Typically, the substrates or carriers on which structures, devices such as cathode assemblies and methods according to embodiments described herein are provided are large area substrates as described herein. For example, large area substrates or carriers include GEN 4.5, which corresponds to approximately 0.67 m ² substrates (0.73 x 0.92 m), GEN 5, which corresponds to approximately 1.4 m ² substrates (1.1 mx 1.3 m), and GEN 5, which corresponds to approximately 4.29 m ² substrates. GEN 7.5 corresponding to about 5.7 m2 substrates (1.95 mx 2.2 m), GEN 8.5 corresponding to about 5.7 ^m2 substrates (2.2 mx 2.5 m), or even GEN corresponding to about 8.7 ^m2 substrates (2.85 mx 3.05 m) It could be 10. Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can be implemented similarly.

[0093] Although the foregoing relates to some embodiments, other and additional embodiments may be devised without departing from the basic scope of the disclosure. The scope is determined by the following claims.

Claims (15)

1. A method of depositing at least one material on a substrate, comprising:
first deposition—the first deposition comprising sputtering from a first rotating target and a second rotating target through an aperture, the aperture being adjustable and having less than a first size, the first rotating target The target has a first magnet assembly that provides plasma confinement in a first direction toward the second rotating target, the second rotating target providing plasma confinement in a second direction toward the first rotating target. and a second magnet assembly wherein the first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle less than a first value; and
comprising a second deposition on top of the first deposition,
The second deposition includes sputtering from the first rotating target and the second rotating target through the aperture, the aperture having at least a second size, the second size being larger than the first size. , wherein the first magnet assembly provides plasma confinement in a third direction, the second magnet assembly provides plasma confinement in a fourth direction, and at least one of the third direction or the fourth direction has at least a second value. deviates from being parallel to the substrate plane by an angle of, wherein the second value is greater than the first value.
A method of depositing at least one material on a substrate. According to claim 1,
The first value is 20°,
A method of depositing at least one material on a substrate. According to claim 1 or 2,
wherein the plasma confinement directions of the first magnet assembly and the second magnet assembly change gradually between the first deposition and the second deposition.
A method of depositing at least one material on a substrate. According to any one of claims 1 to 3,
wherein the size of the aperture changes gradually between the first deposition and the second deposition.
A method of depositing at least one material on a substrate. According to any one of claims 1 to 4,
The aperture serves as a gap between at least two shields,
A method of depositing at least one material on a substrate. According to any one of claims 1 to 5,
wherein the at least one material comprises a metal, a metal oxide, or a transparent conductive oxide.
A method of depositing at least one material on a substrate. configured to be connectable to a system for depositing a material, and further configured to control said system to perform the method according to any one of claims 1 to 6,
Controller. A system for depositing at least one material on a substrate, comprising:
a first target support for the first rotation target;
a first magnet assembly connectable to the first target support;
a second target support for the second rotation target;
a second magnet assembly connectable to the second target support;
an adjustable aperture provided in the shield or between at least two shields to allow sputtered material to reach the substrate; and
Comprising a controller according to claim 7,
A system for depositing at least one material on a substrate. According to clause 8,
a first shield positioned between the first rotation target and the deposition area, and
Further comprising a second shield positioned between the second rotation target or the third rotation target and the deposition area,
The first shield includes a first shield magnet assembly,
wherein the second shield includes a second shield magnet assembly facing the first shield magnet assembly,
A system for depositing at least one material on a substrate. 1. A method of depositing at least one material on a substrate, comprising:
First deposition—the first deposition comprising sputtering from a first rotating target and a second rotating target through a first aperture, the first rotating target confining the plasma in a first direction toward the second rotating target. wherein the second rotation target has a second magnet assembly providing plasma confinement in a second direction toward the first rotation target, wherein the first direction and the second direction are deviation from being parallel to the substrate plane of said substrate by an angle less than the value 1; and
comprising a second deposition on top of the first deposition,
The second deposition includes sputtering from at least a third rotating target through a second aperture, the second aperture having a larger size than the first aperture, and the third rotating target rotating in a third direction. and a third magnet assembly providing plasma confinement, wherein the third direction deviates from being parallel to the substrate plane by at least a second value of an angle, the second value being greater than the first value.
A method of depositing at least one material on a substrate. According to claim 10,
The first value is 20°,
A method of depositing at least one material on a substrate. The method of claim 10 or 11,
wherein the at least one material comprises a metal, a metal oxide, or a transparent conductive oxide.
A method of depositing at least one material on a substrate. configured to be connectable to a system for depositing a material, and further configured to control said system to perform the method according to any one of claims 10 to 12,
Controller. A system for depositing at least one material on a substrate, comprising:
a first target support for the first rotation target;
a first magnet assembly connectable to the first target support;
a second target support for the second rotation target;
a second magnet assembly connectable to the second target support;
a third target support for the third rotation target;
a third magnet assembly connectable to the third target support;
a first aperture provided in the shield or between two shields;
a second aperture provided in the shield or between two shields; and
Comprising a controller according to claim 13,
A system for depositing at least one material on a substrate. A system for depositing at least one material on a substrate, comprising:
a first target support for the first rotation target;
a first magnet assembly connectable to the first target support;
a second target support for the second rotation target;
a second magnet assembly connectable to the second target support, wherein the first magnet assembly and the second magnet assembly, when connected, are oriented away from being parallel to the substrate plane of the substrate by an angle less than a first value; ―;
a third target support for the third rotation target;
a third magnet assembly connectable to the third target support, wherein the third magnet assembly, when connected, is oriented away from being parallel to the plane of the substrate by at least a second value of the angle, the second value being coupled to the first magnet assembly; greater than value ―;
a first aperture provided in the shield or between two shields to allow sputtered material from the first and second rotating targets to reach the substrate; and
a second aperture provided in the shield or between two shields to allow sputtered material from at least the third rotating target to reach the substrate;
The second aperture has a larger size than the first aperture,
A system for depositing at least one material on a substrate.