KR20230074268A - Methods of Depositing Materials on Substrates - Google Patents

Abstract

A method of depositing a material onto a substrate is described. The method includes sputtering at least one component of material from a first rotating target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction toward the second rotating target, wherein at least three magnetic poles of the first magnet assembly are directed toward the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction toward the third rotating target, wherein at least three magnetic poles of the second magnet assembly are directed toward the second plasma confinement.

Description

Methods of Depositing Materials on Substrates

[0001] Embodiments of the present disclosure relate to the deposition of materials on a substrate. Embodiments of the present disclosure relate specifically to deposition of a material on a substrate by opposite target sputtering.

[0002] BACKGROUND OF THE INVENTION Deposition of materials on substrates has many applications in various technical fields. Sputtering is a method for the deposition of materials on a substrate. Sputtering may involve bombardment of a substrate, particularly a film located on the substrate, by energetic particles. The impact can adversely affect the properties of the material, particularly the film, located on the substrate. To prevent impact, for example, facing target sputtering (FTS) systems using planar targets have been devised. In the FTS system, instead of pointing directly at the substrate, the targets are pointing at each other. However, the stability of the sputtering plasma in conventional FTS systems is limited. Conventional FTS systems are not suitable for use in mass production. Additionally, conventional FTS systems are associated with low deposition rates leading to low productivity and risk of substrate surface contamination.

[0003] In view of the foregoing, it would be advantageous to provide improved methods of depositing material on a substrate.

[0004] According to one embodiment, a method of depositing a material on a substrate is provided. The method includes sputtering at least one component of a material from a first rotary target having a first magnet assembly and a second magnet assembly. A first magnet assembly provides a first plasma confinement in a first direction toward a second rotating target, with at least three magnetic poles of the first magnet assembly facing the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction toward the third rotating target, wherein at least three magnetic poles of the second magnet assembly are directed toward the second plasma confinement.

[0005] According to one embodiment, a system for depositing a material is provided. The system includes first, second and third rotational targets, the first rotational target comprising a first magnet assembly and a second magnet assembly. The system provides a first plasma confinement in a first direction in which the first magnet assembly faces a second rotating target, during deposition of a material, wherein at least three magnetic poles of the first magnet assembly face the first plasma confinement; and The two magnet assemblies are configured to provide a second plasma confinement in a second direction toward the third rotating target, wherein at least three magnetic poles of the second magnet assembly are directed toward the second plasma confinement.

[0006] The present disclosure should be understood to encompass apparatuses and systems for practicing the disclosed methods, including apparatus components for performing each described method aspect. Method aspects may be performed, for example, by hardware components, by a computer programmed by suitable software, or by any combination of the two. It should also be understood that the present disclosure encompasses methods for operating the described devices and systems. The methods for operating the devices and systems described include method aspects for performing all functions of an individual device or system.

[0007] In order that the features described above may be understood in detail, a more detailed description of the subject briefly summarized above may be provided below with reference to embodiments. The accompanying drawings relate to embodiments and are described in the following:
1A-1C are schematic cross-sectional views of systems for depositing material, in accordance with embodiments described herein;
2 is a schematic cross-sectional view of a system for depositing a material, in accordance with embodiments described herein;
3 is a schematic cross-sectional view of a system for depositing a material, in accordance with embodiments described herein;
4 is a chart illustrating a method of depositing a material on a substrate, in accordance with embodiments described herein.

[0008] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the drawings. Within the following description of the drawings, like reference numbers indicate like components. In general, only differences for individual embodiments are described. Each example is provided by way of explanation and is not intended as limitation. Moreover, features illustrated or described as part of one embodiment may be used on or in conjunction with other embodiments to yield a still further embodiment. It is intended that the description include such modifications and variations.

[0009] 1A-1C are schematic cross-sectional views of systems for depositing material, in accordance with embodiments described herein. The system 100 shown in FIG. 1A includes a first rotating target 110 having a first magnet assembly 112 and a second magnet assembly 116 . Both the first magnet assembly 112 and the second magnet assembly 116 are positioned within the first rotating target 110 . The first and second magnet assemblies may face opposite sides of the first rotating target 110 and may be operated to face opposite sides.

[0010] The system further includes a second rotational target 130 and a third rotational target 150 . The first rotating target 110 may be operated so that the first magnet assembly 112 of the first rotating target 110 faces the second rotating target 130 . The first rotating target may be operated such that the second magnet assembly 116 of the first rotating target 110 faces the third rotating target 150 .

[0011] As shown in the depicted example, the first magnet assembly 112 of the first rotating target is coupled to the first plasma confinement 120 in a first direction towards the second rotating target 130, particularly during deposition of material. can provide. The second magnet assembly 116 of the first rotating target 110 may provide a second plasma confinement 122 in a second direction towards the third rotating target, particularly during material deposition.

[0012] In embodiments, for example as depicted in FIG. 1A , the second rotational target 130 and the third rotational target 150 may have at least substantially the same structure as the first rotational target 110 . The magnet assembly of the second rotational target 130 may provide the third plasma confinement unit 140 in a direction toward the first rotational target 110 .

[0013] Plasma associated with sputter deposition can be trapped between the first and second rotating targets. The first plasma confinement unit 120 and the third plasma confinement unit 140 may at least partially overlap. In particular, the first rotation target and the second rotation target are neighboring targets. In particular, no additional targets are positioned in the area between the first and second rotational targets.

[0014] Similarly, the magnet assembly of the third rotational target 150 may provide the fourth plasma confinement unit 160 in a direction toward the first rotational target 110 . A structural relationship between the third rotation target 150 and the first rotation target 110 may be similar to the relationship between the second rotation target 130 and the first rotation target 110 described above.

[0015] In the context of the present disclosure, a plasma confinement is to be understood in particular as a plasma confinement region. A plasma confinement region can be understood as a region in which the amount of plasma is increased relative to the environment, due in particular to the effect of the magnetic field associated with the magnet assembly of the rotating target. In the context of the present disclosure, providing the plasma confinement in one direction should be understood as providing, in particular, the plasma confinement such that the main direction of the plasma confinement extends in that direction. In particular, in embodiments where the magnet assembly includes a permanent magnet, providing the plasma confinement in a direction toward the rotating target causes the magnet assembly to face the rotating target, e.g., a neighboring rotating target, i.e., the magnet assembly. It can be understood as providing the magnet assembly in one position, such that the axis of symmetry of is directed in that direction. According to some embodiments of the present disclosure, a plasma confinement is provided in a plasma racetrack, particularly a closed plasma racetrack. Plasma confinement associated with one magnetron or magnet assembly provides a closed loop. The closed loop can be provided, for example, in one target, the target where the magnet assembly is provided.

[0016] Generally, a magnet assembly positioned within a rotating target may enable magnetron sputtering. As used herein, “magnetron sputtering” refers to sputtering performed using a magnetron, ie, a magnet assembly. A magnet assembly is to be understood in particular as a unit capable of generating a magnetic field. A magnet assembly may include one or more permanent magnets. Permanent magnets may be arranged within the rotating target such that free electrons are trapped within the generated magnetic field, eg a closed loop or racetrack. The magnet assembly may be provided within the backing tube of the rotating target or within the target material tube. Each of the first, second and third rotational targets may be a cathode or may be part of a cathode. The system can be configured for DC sputtering. In embodiments, the system may be configured for pulsed DC sputtering.

[0017] A rotating target is to be understood in particular as a rotatable sputtering target, for example a cylindrical sputtering target. In particular, the rotating target may be a rotatable cathode containing the material to be deposited. The rotating target may be coupled to a shaft configured to rotate in at least one operating state of the system. The rotating target can be connected directly to the shaft or indirectly through a connecting element. According to some embodiments, rotational targets within the deposition chamber may be interchangeable. Replacement of the rotating targets may become possible after the material to be sputtered is consumed.

[0018] In embodiments, the system may be configured for sputtering of a transparent conductive oxide film. The system may be configured for deposition of materials such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) or MoN. In embodiments, the system may contain silver, magnesium silver (eg, MgAg) aluminum, indium, indium tin (InSn), indium zinc (InZn), gallium, gallium zinc (GaZn), niobium, (such as Li or Na) It may be adapted for deposition of metallic materials such as alkali metals, alkaline earth metals (such as Mg or Ca), yttrium, lanthanum, lanthanide elements (such as Ce, Nd, or Dy) and alloys of these materials. can The system can be configured for the deposition of electrodes, in particular transparent electrodes, in displays, in particular OLED displays, liquid crystal displays, and touchscreens. More specifically, the system can be configured for deposition of top contacts for top emitting OLEDs. In embodiments, the system may be configured for deposition of electrodes, particularly thin film solar cells, photodiodes, and transparent electrodes of smart or switchable glass. The system can be configured to sputter transparent dielectrics used as charger creation layers. The system may be configured for deposition of materials such as molybdenum oxide (MoO), or transition metal oxides such as vanadium oxide (VO) or tungsten oxide (WOx), zirconium oxide (ZrO) or lanthanum oxide (LaO). The system may be configured to sputter transparent dielectrics used for optical enhancement layers such as silicon oxide (SiO), niobium oxide (NbO), titanium oxide (TiO), or tantalum oxide (TaO).

[0019] In embodiments, the target material of the rotating target may be selected from the group consisting of silver, aluminum, silicon, tantalum, molybdenum, niobium, titanium and copper. In particular, the target material may be selected from the group consisting of IZO, ITO, silver, IGZO, aluminum, silicon, NbO, titanium, zirconium, and tungsten. The system may be configured to deposit material via a reactive sputter process. In reactive sputter processes, oxides of target materials are typically deposited. However, nitrides or oxynitrides may also be deposited.

[0020] A feature in which the plasma confinement of the first rotating target faces the second rotating target or the third rotating target may have the advantage that soft deposition is achieved. For example, impact of the substrate by high-energy particles may be reduced. Damage of the substrate, in particular of the coating on the substrate, can be mitigated. This is particularly advantageous with respect to deposition on sensitive substrates or layers, especially on substrates with sensitive coatings.

[0021] For example, when depositing the electrodes of an OLED, material may have to be deposited on a highly sensitive layer. For some materials, particularly transparent conductive oxides, soft evaporation using conventional techniques may not be possible. Embodiments of the present disclosure utilize an opposing target design to address this. By using rotating targets, according to embodiments of the present disclosure, target surface contamination can be mitigated and system uptimes can be increased. Additionally, through soft deposition as described herein, the number of high-energy particles such as sputter particles, negative ions, and electrons impinging on the substrate may be reduced. Changes in temperature on or near the substrate surface can be reduced. In particular, lower temperatures can be achieved on or near the substrate surface.

[0022] In the prior art, faced target sputtering (FTS) setups using planar targets are known. A large amount of material is deposited on the neighboring target surface. Deposition of material on target surfaces may be caused by, for example, nodule growth, subsequent arcing by particles, or flaking of deposited material from the target, in particular layers of deposited material. can lead to flaking. Long-term stability may be compromised, and as a result, applications, in particular in mass production, are not feasible. Known FTS setups with planar targets can have an expected stability of less than a day. According to embodiments of the present disclosure, the plasma confinement of the first rotating target facing the second or third rotating target is such that material deposited on the surface of any of the rotating targets will, in particular, cause any nodule growth. It has the advantage that it can be sputtered again before it can be sputtered. In known FTS setups with planar cathodes, only a small amount of material deposited on the race track of the planar cathode can be sputtered back. A stable FTS process for planar targets is difficult or impossible to achieve.

[0023] In rotating targets, removal of material from the target during magnetron sputtering has improved uniformity when compared to magnetron sputtering from planar targets. The uniformity in the case of rotating targets is caused in particular by the movement of the target surface relative to the magnetic field resulting from the rotation of the targets. The amount of material collected on the target surface can be reduced or even eliminated. Arc discharges can be reduced or even eliminated. Material flaking can be reduced or eliminated. Stability, especially long-term stability of the deposition process, can be increased. The use of the FTS concept for mass production may become possible. The collection efficiency can be increased, in particular due to the effect that the increased amount of material deposited on the target is sputtered back. Collection efficiency is to be understood in particular as the amount of sputtered material captured by the substrate relative to the total amount of material released by the sputtering target. Material utilization can be increased. Material waste and costs can be reduced.

[0024] The first rotating target includes first and second magnet assemblies, wherein the first magnet assembly provides a first plasma confinement in a first direction toward the second rotating target and the second magnet assembly directs toward the third rotating target. A feature providing a second plasma confinement in two directions may be associated with an increased deposition rate. In particular, compared to a system with rotating targets with only one magnet assembly, the deposition rate can be much higher, eg approximately twice as high. The increase comes, in particular, from the creation of two racetracks, in particular two racetracks located on opposite sides of a target.

[0025] In embodiments, the first magnet assembly includes at least three magnetic poles facing the first plasma confinement. The second magnet assembly may include at least three magnetic poles facing the second plasma confinement. In the embodiment shown in FIG. 1A , the first magnet assembly 112 includes three magnetic poles 114 facing the first plasma confinement 120 and the second magnet assembly 116 includes the second plasma confinement. It includes three magnetic poles directed towards section 122.

[0026] As described above, the increase in deposition rate due to the presence of two magnet assemblies in the rotating target will be synergistically enabled by the feature that the magnet assembly includes at least three magnetic poles facing the plasma confinement. may or may be improved. A closed racetrack can be created on a rotating target by means of a magnet assembly comprising three, in particular precisely three, magnetic poles facing the plasma confinement.

[0027] In embodiments, system 100 may be configured to deposit a material onto substrate 102 . The system may further be configured such that the first and second directions deviate from parallel to the substrate plane by an angle of less than 40°. In the context of this disclosure, “substrate plane” refers in particular to the plane of the substrate 102 on which material is deposited. In particular, the first and second directions may deviate from parallel to the substrate plane by an angle of less than 30°, 20° or 10°, for example. An advantageous arrangement can be achieved in which collision of the substrate by energetic particles is minimized while at least a satisfactory amount of material is deposited on the substrate. If any of the first and second directions deviate significantly from being parallel to the substrate plane in a direction toward the substrate, adverse impact of the substrate by energetic particles may result. If any of the first and second directions deviate significantly from being parallel to the substrate plane in a direction away from the substrate, an unsatisfactorily low deposition rate on the substrate may result. Additionally or alternatively, waste of target material may occur.

[0028] The first direction may correspond to a first angle, in particular, a first polar angle of the polar coordinate system. A reference point, in particular a pole, of the polar coordinate system can be positioned on the axis of rotation of the rotating target. The reference direction of the polar coordinate system may be perpendicular to the rotation axis of the rotation target. The deviation of the first direction from being parallel to the substrate plane may refer to the polar coordinate system of the first rotating target. The deviation of the second direction from being parallel to the substrate plane may refer to the polar coordinate system of the second rotating target.

[0029] In embodiments, the system provides the first and second directions from being parallel to the substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and an angle of less than 10° away from the substrate. It can be configured to deviate as much as .

[0030] In embodiments, the magnets included in each of the magnet assemblies of the system may deviate from being parallel to each other. In other words, the magnets of each of the magnet assemblies of the system may surround the open angle. In particular, at least one of the magnets may deviate from parallel to the central axis or axis of symmetry of the magnet assembly by an angle greater than 3, 6 or 10°, for example. The at least one magnet may deviate from being parallel to the central axis or axis of symmetry by less than, for example, 30, 25, or 15 degrees.

[0031] In embodiments, as shown for example in FIGS. 1A-1C , the second rotational target 130 includes a third magnet assembly 132 facing the first magnet assembly 112 . The third rotational target 150 may include a fourth magnet assembly 152 facing the second magnet assembly 116 .

[0032] Each of the magnetic poles of the third magnet assembly generally facing the first magnet assembly 112 may have the same polarity as the respective nearest pole of the first magnet assembly 112 . Each of the magnetic poles of the fourth magnet assembly facing the second magnet assembly 116 may have the same polarity as the respective closest pole of the second magnet assembly 116 . In other words, opposing magnet assemblies may have the same magnetic polarities.

[0033] In particular, in the embodiments depicted in FIGS. 1B and 1C , each of the magnetic poles of the third magnet assembly facing the first magnet assembly 112 will have an opposite polarity to the respective closest pole of the first magnet assembly 112 . can Each of the magnetic poles of the fourth magnet assembly facing the second magnet assembly 116 may have an opposite polarity to the respective closest pole of the second magnet assembly 116 . In other words, opposing magnet assemblies may have opposite magnetic polarities with respect to each other.

[0034] In Fig. 1b, possible resulting magnetic field lines between rotating targets are shown. The resulting regions of high plasma density between rotating targets are shown in FIG. 1C. Having opposing magnet assemblies with magnetic polarities opposite to each other is associated with the advantage that the magnetic field of a magnetic lens can be provided. In a magnetic field, charged particles can be deflected. The perpendicular component of the momentum of the charged particles to the substrate surface can be reduced. The vertical component of the momentum is responsible for the possible damage caused by the charged particles to the substrate or to a layer positioned on the substrate, in particular to the possible depth of the damage.

[0035] The radius of gyration of a particle with kinetic energy (q U) is:

[0036] For a full deflection of 90° for oxygen ions with maximum energies between 250 eV and 300 eV, a magnetic field located in the direction towards the substrate, eg between the substrate and the racetrack with a depth of 10 cm would be advantageous. will be. In addition, the magnetic field will need to have a high intensity, for example 0.1 T. However, for a simple reduction of the vertical component of the momentum of ions, in particular oxygen ions, the requirements for the magnetic field can be much lower.

[0037] Conventionally, providing opposing magnet assemblies having opposite magnetic polarities relative to each other may appear to be disadvantageous to one skilled in the art. The reason is that the configuration at least slightly reduces the tangential magnetic field over the racetrack. Plasma confinement can be reduced. The plasma potential may be increased, particularly by an amount of less than 10, 30, or 50 eV. It is part of this disclosure to recognize that the potential negative effects associated with a configuration with opposite magnetic polarities may be less detrimental than expected. In particular, the maximum ion energy always corresponds to a plasma potential of, for example, 250 to 300 eV. Thus, the maximum ion energy can be kept exceptionally large compared to desired particle energies of less than 1 eV, particularly as observed during evaporation.

[0038] 2 shows a system 200 for depositing a material, in accordance with embodiments described herein. A first rotational target 110 , a second rotational target 130 , and a third rotational target 150 are positioned within the deposition chamber 202 . A first additional chamber and a second additional chamber may be provided adjacent to the deposition chamber (not shown). According to some embodiments, which may be combined with other embodiments described herein, depositing material onto a substrate may be provided using a dynamic deposition process. For example, the substrate may move past a first rotational target and a second rotational target while material is being deposited. Deposition chambers or regions of the vacuum processing system may be separated from additional chambers or other regions by valves.

[0039] According to some embodiments, the process gases are any of noble gases such as argon, krypton or xenon and reactive gases such as oxygen, nitrogen, hydrogen and ammonia (NH3), ozone (O3), activated gases, etc. can include

[0040] Substrate 102 may be provided on a substrate carrier (not shown). An exemplary direction of movement of substrate 102 is indicated by arrow 204 . The term "substrate" as used herein should encompass both glass substrates, wafers, pieces of transparent crystal such as sapphire, or inflexible substrates such as glass plates, and flexible substrates such as webs or foils. do. According to still further embodiments, which may be combined with other embodiments described herein, transport of each of the substrate and/or substrate carrier may be provided by a magnetic levitation system. The carrier can be levitated by magnetic forces or held without or with reduced mechanical contact by magnetic forces and can be moved by magnetic forces.

[0041] Each of the first rotation target 110 , the second rotation target 130 , and the third rotation target 150 may be a cathode. The first, second and third rotational targets may be electrically connected to a DC power supply. For example, a chamber housing within a vacuum chamber or one or more shields may be provided for mass potential. These components can function as an anode. Optionally, the system may further include anodes. In embodiments that may be combined with other embodiments described herein, at least one or more of the rotating targets may be electrically connected to a respective respective power supply. In particular, each of the rotating targets can be connected to a respective individual power supply. For example, a first rotational target can be connected to a first DC power supply, a second rotational target can be connected to a second DC power supply, and a third rotational target can be connected to a third DC power supply.

[0042] In embodiments, as shown in FIG. 2 for example, a system according to the present disclosure may further include a first shield 210 positioned between the first rotational target 110 and the deposition area. The deposition region should be understood specifically as the region in which the substrate 102 should be located during deposition. The system 200 may further include a second shield positioned between the second rotating target 130 and the deposition region or between the third rotating target 150 and the deposition region, for example.

[0043] In the depicted embodiment, the first shield 210 includes a first shield magnet assembly 212 . The second shield 230 may include a second shield magnet assembly 232 facing the first shield magnet assembly 212 .

[0044] Each of the magnetic poles of the first shield magnet assembly facing the second shield magnet assembly 232 may have an opposite polarity to the respective closest pole of the second shield magnet assembly 232 . In FIG. 2 , the resulting magnetic field lines between the first shield magnet assembly 212 and the second shield magnet assembly 232 are shown. The magnetic field at the aperture between the first shield 210 and the second shield 230 may be a field of a magnetic lens. Advantages regarding the deflection of charged particles may be achieved, particularly as described in relation to the magnet assemblies of the rotating target in the description of FIG. 1B.

[0045] 3 shows a system for depositing a material, in accordance with embodiments described herein. The substrate 102 faces the first rotational target 110 from the first side. Compared to the system depicted in FIG. 2 , the system is further configured for deposition of material on an additional substrate 302 directed toward the first rotating target 110 from a second side opposite the first side.

[0046] The depicted system further includes a third shield 330 positioned between the first rotating target 110 and the additional deposition area. An additional deposition area should be specifically understood as an area in which an additional substrate 302 is to be located during deposition. The system 300 further includes a fourth shield 340 positioned between the second rotational target 130 and the additional deposition area. Each of the third shield 330 and the fourth shield 340 may include at least one shield magnet assembly. The remaining structure of system 300 may correspond to features of the system described above with respect to FIG. 2 .

[0047] According to some embodiments, which may be combined with other embodiments described herein, an array of cathodes or cathode pairs may be provided, particularly for applications for large area deposition. An array may include two or more cathodes or cathode pairs, for example three, four, five, six or even more cathodes or cathode pairs. The array may be provided in one deposition chamber. The outermost cathodes of the array may contain only one magnet assembly, in particular instead of two magnet assemblies. The magnet assembly can be operated to face one of the inner cathodes of the array, especially without the additional magnet assembly of the outermost cathode facing outward.

[0048] The present disclosure further relates to a controller configured to be connectable to a system for depositing material. The controller is further configured to control the system such that a method according to embodiments described herein is performed.

[0049] A controller may include a central processing unit (CPU), memory and, for example, support circuits. To facilitate system control, the CPU may be any type of general purpose computer processor that may be used in an industrial environment to control the various components and sub-processors. The memory is coupled to the CPU. The memory, or computer readable medium, may be one or more readily available memory devices such as random access memory, read only memory, floppy disk, hard disk, or any other form of digital storage, either local or remote. there is. Support circuits may be coupled to the CPU to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like.

[0050] Control instructions are typically stored in memory as software routines or programs. Software routines or programs may also be stored and/or executed by a second CPU located remotely from the hardware controlled by the CPU. According to any of the embodiments of the present disclosure, the software routine or program, when executed by the CPU, transforms a general purpose computer into a special purpose computer (controller) that controls a system for depositing material.

[0051] Methods of the present disclosure may be implemented as software routines or programs. At least some of the method operations disclosed herein may be performed via hardware as well as performed by a software controller. Accordingly, embodiments may be implemented in software as running on a computer system, in hardware as an application specific integrated circuit or other type of hardware implementation, or in a combination of software and hardware. A controller may execute or perform a method of depositing a material on a substrate according to embodiments of the present disclosure. The methods described herein may be performed using computer programs, software, computer software products, and interrelated controllers, such as a CPU, memory, user interface, and corresponding components of a system for depositing material. You can have input and output devices that are in communication.

[0052] The present disclosure further relates to a method of depositing a material on a substrate. The material may include any of indium tin oxide and indium zinc oxide, for example. The method includes sputtering at least one component of material from a first rotating target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction toward the second rotating target. At least three, in particular exactly three magnetic poles, of the first magnet assembly are directed towards the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction toward the third rotating target. At least three, in particular exactly three magnetic poles, of the second magnet assembly are directed towards the second plasma confinement.

[0053] In particular, in embodiments in which non-reactive sputtering is performed, the material to be deposited on the substrate may be sputtered from any of the first, second, and third rotating targets. This should be particularly understood so that the particles ejected from the surface of the first or second rotating target form a deposited material. Particularly in embodiments where reactive sputtering is performed, particles of the first material may be ejected from the surface of the first, second, or third rotating target. Particles of the first material may combine with the second material to form a material to be deposited on the substrate. The first material can be understood to be a component of the deposited material. The gas surrounding the first rotational target and the second rotational target may include a second material.

[0054] In embodiments, the first direction and the second direction deviate from parallel to the substrate plane by an angle of less than 40°. In particular, the first and second directions may deviate from parallel to the substrate plane by an angle of less than 30°, 20° or 10°. In embodiments, the first direction and the second direction deviate from being parallel to the substrate plane by less than 40°, 30° or 20° towards the substrate and less than 10° away from the substrate.

[0055] According to embodiments described herein, which may be combined with other embodiments described herein, a plasma associated with sputtering and a substrate are moved relative to each other for deposition of material on the substrate.

[0056] Generally, magnet assemblies can be held stationary during deposition of material on a substrate. In embodiments, the magnet assemblies may be moved relative to each other and/or relative to the substrate during deposition, for example in an oscillating or back-and-forth manner. The uniformity of the deposited layer can be increased or different deposition characteristics can be provided with increasing film thickness.

[0057] 4 is a chart illustrating a method of depositing a material on a substrate, in accordance with embodiments described herein. The method 400 includes, at block 402, configuring a first magnet assembly of a first rotating target such that the first magnet assembly provides a first plasma confinement in a first direction toward a second rotating target. . At least three magnetic poles of the first magnet assembly face the first plasma confinement. The method further includes, at block 404 , configuring a second magnet assembly of the first rotating target to provide a second plasma confinement in a second direction such that the second magnet assembly faces the third rotating target. At least three magnetic poles of the second magnet assembly face the second plasma confinement.

[0058] Adapting the magnet assembly, particularly in embodiments where the magnet assembly comprises a permanent magnet, can be understood as providing the magnet assembly at a specific position within the rotating target, in particular with a specific orientation. The method further includes, at block 406 , depositing a material on the substrate by sputtering at least one component of the material from the first rotating target.

[0059] Embodiments described herein may be utilized for display PVD, ie sputter deposition on large area substrates for the display market. According to some embodiments, the large area substrates or individual carriers, wherein the carriers have a plurality of substrates, may have a size of at least 0.67 m ² . Typically, the size may be from about 0.67 m ² (0.73×0.92 m - Gen 4.5) to about 8 m ² , more typically from about 2 m ² to about 9 m ² or even up to 12 m ² . Typically, the substrates or carriers on which structures, devices, such as cathode assemblies, and methods according to embodiments described herein are provided are large area substrates as described herein. For example, a large area substrate or carrier may have GEN 4.5, corresponding to about 0.67 m ² substrates (0.73×0.92 m), or GEN 5, about 4.29, corresponding to about 1.4 m ² substrates (1.1 m×1.3 m). GEN 7.5 corresponding to m ² substrates (1.95 m×2.2 m), GEN 8.5 corresponding to about 5.7 m ² substrates (2.2 m×2.5 m), or even about 8.7 m ² substrates (2.85 m×3.05 m) ) may be GEN 10 corresponding to Larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0060] Especially for research and development purposes, the embodiments described herein may also be used for sputter deposition on substrates having a size smaller than, for example, 300 mm x 300 mm or 250 mm x 250 mm. In particular, the substrate may have a size of 200 mm×200 mm. In embodiments, a carrier having a size of eg 200 mm x 200 mm may be used. A carrier can be recharged using multiple test coupons. According to still further embodiments, the method of deposition as described herein may also be utilized for wafer processing.

[0061] Although the foregoing relates to some embodiments, other and additional embodiments may be devised without departing from the basic scope of the present disclosure. The scope is determined by the following claims.

Claims (15)

A method of depositing a material on a substrate, comprising:
sputtering at least one component of the material from a first rotary target having a first magnet assembly and a second magnet assembly;
The first magnet assembly provides a first plasma confinement in a first direction toward a second rotating target, and at least three magnetic poles of the first magnet assembly provide a first plasma confinement. heading, and
wherein the second magnet assembly provides a second plasma confinement in a second direction toward a third rotating target, and wherein at least three magnetic poles of the second magnet assembly are directed toward the second plasma confinement. method. According to claim 1,
The second rotating target includes a third magnet assembly facing the first magnet assembly, each of the magnetic poles of the third magnet assembly facing the first magnet assembly relative to a respective nearest magnetic pole of the first magnet assembly. have opposite polarity or
The third rotating target includes a fourth magnet assembly facing the second magnet assembly, each of the magnetic poles of the fourth magnet assembly facing the second magnet assembly relative to a respective nearest magnetic pole of the second magnet assembly. A method of depositing a material on a substrate having an opposite polarity. According to claim 1 or 2,
wherein the first direction and the second direction deviate from parallel to the substrate plane of the substrate by an angle of less than 40°. According to claim 3,
wherein the first direction and the second direction deviate from being parallel to the substrate plane by an angle of less than 40° toward the substrate and an angle of less than 10° away from the substrate. method. According to any one of claims 1 to 4,
wherein the material deposited on the substrate forms a transparent conductive oxide film. According to any one of claims 1 to 5,
wherein the material comprises any of IZO, ITO, IGZO or Ag. According to any one of claims 1 to 6,
the substrate facing the first rotating target from a first side, the method further comprising depositing a material on an additional substrate facing the first rotating target from a second side opposite the first side; A method of depositing a material on a substrate. A controller configured to be connectable to a system for depositing material and further configured to control the system so that a method according to any one of claims 1 to 7 is performed. A system for depositing a material comprising:
The system includes a first rotational target, a second rotational target, and a third rotational target, the first rotational target comprising a first magnet assembly and a second magnet assembly, the system comprising: during deposition of the material;
providing a first plasma confinement in a first direction in which the first magnet assembly faces the second rotating target, and so that at least three magnetic poles of the first magnet assembly face the first plasma confinement; and
The second magnet assembly provides a second plasma confinement portion in a second direction toward the third rotation target, and at least three magnetic poles of the second magnet assembly face the second plasma confinement portion.
A system for depositing a material, configured. According to claim 9,
wherein the system is configured to deposit the material onto a substrate, wherein the first direction and the second direction deviate from parallel to a substrate plane of the substrate by an angle of less than 40°. According to claim 10,
wherein the first direction and the second direction deviate from being parallel to the substrate plane by an angle of less than 40° toward the substrate and an angle of less than 10° away from the substrate. According to any one of claims 9 to 11,
wherein the deposited material forms a transparent conductive oxide film. According to any one of claims 9 to 12,
wherein the material comprises ITO or IZO. According to any one of claims 9 to 13,
The system,
a first shield positioned between the first rotational target and a deposition region; and
a second shield positioned between the second or third rotational target and the deposition region;
the first shield includes a first shield magnet assembly; and
wherein the second shield includes a second shield magnet assembly facing the first shield magnet assembly. According to claim 14,
wherein each of the magnetic poles of the first shield magnet assembly facing the second shield magnet assembly has an opposite polarity with respect to a respective nearest pole of the second shield magnet assembly.

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