KR101273771B1 - Roll-to-Roll sputtering system - Google Patents

Abstract

The present invention relates to a roll-to-roll sputtering system capable of continuously forming a film-deposited deposit. The roll-to-roll sputtering system according to the present invention includes a housing having a vacuum chamber, a sputtering gas supply for supplying a sputtering gas to the vacuum chamber, a winder for continuously supplying a film-like deposit to a deposition region provided in the vacuum chamber, and A rewinder, a sputter gun for supplying the deposited particles to be deposited on the film-like deposit in the deposition region, a power source for supplying discharge power to the sputter gun, and a film-like deposit passing through the deposition region to cool the film-like deposit. And a cooling system for supplying a cooling medium to the cooling drum. In the roll-to-roll sputtering system according to the present invention, the cooling drum is in contact with the film-like deposit and continuously cools the film-like deposit in the film formation, thereby preventing deformation or breakage of the film-like deposit due to heat.

Description

Roll-to-Roll sputtering system

The present invention relates to a sputtering system, and more particularly to a roll-to-roll sputtering system capable of continuously forming a film-like deposit.

Vapor Deposition can be divided into Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) depending on what happens when the material to be deposited is transformed from gas to solid state on the substrate. Can be. While physical vapor deposition requires a vacuum environment, chemical vapor deposition can operate in an environment of tens to hundreds of torr or atmospheric pressure, and chemical vapor deposition requires a much higher temperature environment than physical vapor deposition.

Chemical vapor deposition includes metal-organic chemical vapor deposition (MOCVD) and hybrid vapor phase epitaxy (HVPE). Chemical vapor deposition, like physical vapor deposition, carries the raw material once in a gaseous state, but the raw material undergoes a chemical reaction on the surface of the substrate to change to a solid state.

Examples of the physical vapor deposition method include sputtering, E-beam evaporation, thermal evaporation, laser molecular beam epitaxy, and the like. L-MBE), pulsed laser deposition (PLD), and the like. These physical vapor deposition methods involve a physical change in the process of changing the gas state into a solid state when the material to be deposited is deposited on a substrate. That is, when a target in a solid state is blown out in a gaseous state through heat, a laser, an electron beam, or the like and the flying raw material contacts the substrate, a thin film is formed. The chemical composition of the substance on the substrate is the same as that of the gaseous substance that reaches the substrate. Physical vapor deposition involves blowing the material to be deposited into a gaseous state, so that the gaseous material collides with other gas molecules in the middle so that it cannot reach the substrate, or the resulting energy loss of the particles to be deposited during the process, and fine dust. In order to prevent the reaction with a vacuum environment is essential.

Among physical vapor deposition methods, sputtering is widely used in that a film of any material can be obtained safely with a relatively simple device without using toxic gas regardless of the type of substrate material. Sputtering is a method of forming a glow discharge of an inert gas (Ar, Kr, Xe, etc.) in a vacuum so that the cations collide with the cathode biased target to release the atoms of the target by momentum transfer.

If the target is a conductor, a DC bias can be used. In the case of a non-conductor, a bias is applied using RF (13.56 MHz) or a pulsed DC power supply to prevent space charge from accumulating. The released atoms move freely in the vacuum chamber and the particles incident on the substrate form a thin film. When the reactive gas (O ₂ , N ₂ , NH ₃ , CH ₄ , C ₂ H _2, etc.) is introduced together with the sputtering gas, the reactive gas molecules are also ionized and activated together with the sputtered particles to react with nitrides and saliva. Compound coating films, such as these, are formed.

Currently, ITO transparent electrodes used in the manufacture of optoelectronic devices such as LCD, AMOLED, solar cell (Si / DSSC / OSC / CIGS), touch panel, light emitting diode (LED), transparent TFT, etc. Made through the process.

However, in sputtering using a plate-shaped target, since the region of the plasma constrained by the high magnetic field is limited, the consumption of the target material is only a portion, and the target material consumption is very high.

In addition, the plate-shaped target has a very high degree of nonuniformity of the material near the surface, and thus a high generation rate of static electricity near the surface. This can lead to high arc incidence in the mass production process using direct current, which can lead to system-wide problems as well as deformation and breakage of the target material.

In addition, in the roll-to-roll sputtering system used in the conventional flexible optoelectronic device fabrication, the substrate may be deformed or the organic layer may be damaged due to direct plasma exposure.

SUMMARY OF THE INVENTION The present invention has been made in view of this point, and an object of the present invention is to provide a roll-to-roll sputtering system free from damage of the deposit by preventing the deposit from being directly exposed to the plasma.

Another object of the present invention is to provide a roll-to-roll sputtering system capable of improving the utilization efficiency of the target material and minimizing the thermal damage of the deposit during the film forming process.

Roll to roll sputtering system according to an aspect of the present invention for achieving the above object, the housing having a vacuum chamber, a sputtering gas supply for supplying a sputtering gas to the vacuum chamber, a film-like deposit is provided in the vacuum chamber A winder and a rewinder for winding or unwinding the film-like deposit to be continuously supplied to the deposition region, and disposed in the vacuum chamber to supply the deposition particles to be deposited on the film-like deposit to the deposition region. A sputter gun, a power source for supplying discharge power to the sputter gun, a cooling drum for cooling the film-like deposit in contact with the film-like deposit passing through the deposition region, and a cooling drum for cooling the cooling drum. It includes a cooling system for supplying a cooling medium.

The deposition region may be provided in plural along the circumference of the cooling drum, and the sputter gun may be provided in plural in the vacuum chamber to supply the deposition particles to each deposition region.

The sputter gun may include a first target and a second target disposed to face each other, and the deposition region may be disposed in a direction orthogonal to an arrangement direction of the first target and the second target.

The first target and the second target has a cylindrical shape, the sputter gun, a first target rotating device and a second target rotating device for rotating the first target and the second target, respectively, the first target And a first magnet unit disposed inside the first target and a second magnet unit disposed inside the second target to form a magnetic field between the second target and the second target.

The sputter gun rotates the first magnet unit and the second magnet unit, respectively, so that the first magnet unit angle adjusting device and the second magnet unit change the placement angle of each of the first magnet unit and the second magnet unit. It may further include an angle adjusting device.

The first magnet unit includes a plurality of first magnets arranged so that all of the same magnetic poles face the second target and a first yoke connecting the ends of the first magnets facing the second target, and the second The magnet unit connects the plurality of second magnets disposed so that the magnetic poles opposite to the magnetic poles of the first magnets facing the second target toward the first target and the ends of the second magnets facing the first target. It may comprise a second yoke.

According to another aspect of the present invention, a roll-to-roll sputtering system includes a housing having a vacuum chamber, a sputtering gas supply for supplying a sputtering gas to the vacuum chamber, and a first film-like deposit in the vacuum chamber. A first winder, a first rewinder, and a second film-type deposit in the vacuum chamber, the first winder and the first rewinder for winding or unwinding the first film-form deposit to interlock with each other to continuously supply the first deposition region. A second winder and a second rewinder for winding or unwinding the second film-like deposit to be continuously supplied to a second deposition region, the first target having a first target and a second target disposed to face each other; Providing deposition particles sputtered from a target and the second target to the first deposition region and the second deposition region A sputter gun disposed between the first deposition region and the second deposition region, a power source for supplying discharge power to the sputter gun, and contacting the first film-like deposit passing through the first deposition region. A cooling drum for cooling the film-like deposit, and a cooling system for supplying a cooling medium to the cooling drum for cooling the cooling drum.

The first deposition region may be provided in plural along the circumference of the cooling drum, and the second deposition region may be provided in plural so as to face each of the first deposition regions, and the sputter gun may face each other. It may be disposed between the first deposition region and each of the second deposition region.

The roll-to-roll sputtering system according to the present invention can prevent the deformation or breakage of the film-like deposit due to the heat generated from the plasma during sputtering by the cooling drum continuously contacting the film-like deposit and continuously cooling the film-like deposit in the film formation. Can be.

In addition, the roll-to-roll sputtering system according to the present invention can effectively confine the plasma between opposing targets of the rotating cylinder to minimize the damage of the deposits by the plasma, and can increase the target utilization efficiency because the target rotates, The film formation speed can also be increased.

In addition, the roll-to-roll sputtering system according to the present invention can maximize the use efficiency of the target material by using a counter-rotating target of the rotation cylindrical can prevent the waste of resources, it is possible to secure cost competitiveness by reducing the production cost.

In addition, the roll-to-roll sputtering system according to the present invention is a metal, a transparent electrode, a semiconductor, a non-conductor, a dielectric, a thin film encapsulation film to enter the manufacturing process of the photoelectric device, such as AMOLED, OTFT, OSC, organic memory device, organic sensor using an organic thin film It can be applied to the film formation of the back without damage by plasma. In addition, it is possible to manufacture low-temperature and low-damage thin films of next-generation flexible displays, flexible solar cells, flexible transistors, flexible memories, and flexible sensors using polymers and low-molecular substrates.

In addition, the roll-to-roll sputtering system according to the present invention can provide various conveniences in the film forming process by adjusting the arrangement angle of the first magnet unit and the second magnet unit for forming the magnetic field of the sputter gun, and obtain various film forming effects. Can be.

Figure 1 schematically shows a roll-to-roll sputtering system according to an embodiment of the present invention.
Figure 2 shows the configuration around the deposition area to explain the film forming process using a roll-to-roll sputtering system according to an embodiment of the present invention.
Figure 3 schematically shows a roll-to-roll sputtering system according to another embodiment of the present invention.
Figure 4 shows the configuration around the deposition area to explain the film forming process using a roll-to-roll sputtering system according to another embodiment of the present invention.
FIG. 5 illustrates a configuration around a deposition region to explain a modified film forming process using a roll-to-roll sputtering system according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, a roll-to-roll sputtering system according to an embodiment of the present invention will be described in detail.

In describing the present invention, the sizes and shapes of the components shown in the drawings may be exaggerated or simplified for clarity and convenience of explanation. In addition, terms defined in consideration of the configuration and operation of the present invention may be changed according to the intention or custom of the user, the operator. These terms are to be construed in accordance with the meaning and concept consistent with the technical idea of the present invention based on the contents throughout the present specification.

As shown in FIG. 1, the roll-to-roll sputtering system 100 according to an embodiment of the present invention includes a housing 110 having a vacuum chamber 110 and a sputtering gas for supplying a sputtering gas to the vacuum chamber 110. A plurality of deposition regions 113a, 113b, and 113c in which the gas supplier 120, the vacuum pump 126 for vacuuming the vacuum chamber 111, and the film-like deposit 10 are provided in the vacuum chamber 111. A plurality of sputter guns 140a, 140b, 140c for supplying the deposition particles to be deposited on the winder 130 and the rewinder 131, and the film-like deposit 10 for continuous supply to the (113d). 140d, a cooling drum 170 for cooling the film-like deposit 10 during the film forming process, and a cooling system 172 for supplying a cooling medium to the cooling drum 170. The gas supply pipe 124 for supplying gas to the vacuum chamber 110 is connected to the housing 110. The gas supply pipe 124 may include a sputtering gas supplier 120 for supplying a sputtering gas such as argon (Ar) and a reactive gas supply 122 for supplying a reactive gas such as oxygen (O ₂ ). Connect with

The winder 130 and the rewinder 131 interlock with each other to wind or unwind the film-like deposit 10 so that the film-like deposit 10 may be separated into a plurality of deposition regions 113a, 113b, 113c, and 113d. Transfer along. The film-like deposit 10 wound around the rewinder 131 is wound around the winder 130 through the plurality of guide rollers 132 and the cooling drum 170. The rewinder 131 is provided with a load cell 133 for detecting the tension of the film-like deposit 10 to be transferred. When the film-like deposit 10 is damaged when the film-like deposit 10 is applied to a predetermined size or more, the load cell 133 monitors the tension of the film-like deposit 10 and prevents it. That is, the load cell 133 is the winder 130 and the rewinder 131 so that the film-like deposit 10 can be transferred to less than the limit tension when the tension received by the film-like deposit 10 is more than a predetermined size. Provides a signal to adjust the speed of

Rotation directions of the winder 130 and the rewinder 131 may vary. That is, when the film forming process is performed again on the film-shaped deposit 10 formed while being unwinded from the rewinder 131 and wound on the winder 130, the rotation directions of the winder 130 and the rewinder 131 are changed to wine. The film-like deposit 10 wound around the der 130 may be unwound and wound around the rewinder 131.

The plurality of sputter guns 140a, 140b, 140c, and 140d may be formed to provide deposition particles to the plurality of deposition regions 113a, 113b, 113c, and 113d, respectively. It is arranged adjacent to 113c and 113d. The plurality of deposition regions 113a, 113b, 113c, and 113d are disposed along the circumference of the cooling drum 170. The plurality of sputter guns 140a, 140b, 140c, and 140d operate by receiving discharge power from the plurality of power sources 160a, 160b, 160c, and 160d. A partition wall 115 is installed between two sputter guns adjacent to each other. Since the structures of the sputter guns 140a, 140b, 140c, and 140d are all the same, one sputter gun 140a will be described below.

As shown in FIGS. 1 and 2, the sputter gun 140a includes a first cathode module 141 and a second cathode module 151 disposed to face each other. Each of the deposition regions 113a, 113b, 113c, and 113d is disposed in a direction orthogonal to the arrangement direction of the first cathode module 141 and the second cathode module 151.

The first cathode module 141 rotates a cylindrical first target 142, a cylindrical first target holder 143 supporting the first target 142, and a first target rotation for rotating the first target 142. The first magnet unit angle adjusting device 149 for changing the arrangement angle of the device 144, the first magnet unit 145 disposed inside the first target holder 143, and the first magnet unit 145 is provided. Include. As the first target rotating device 144, various devices capable of rotating the first target holder 143 to which the first target 142 is coupled, such as a motor, may be used. The first magnet unit angle adjusting device 149 may be a variety of devices capable of rotating the first magnet unit 145 by a predetermined angle, such as a motor.

The first magnet unit 145 is for forming a magnetic field M outside the first target 142 and supports a plurality of first magnets 146 and first magnets 146 to support the first magnets 146. A first yoke 148 is coupled to the end of the member 147 and the first magnets 146. The first magnets 146 are arranged with the same magnetic pole facing the second target 152, and the first yoke 148 connects the ends of the first magnets 146 facing the second target 152. . The first yoke 148 serves to concentrate the magnetic field M by forming one magnetic pole having the magnetic force of the magnetic forces of the first magnets 146. The first magnet unit 145 is rotated by a predetermined angle by the first magnet unit angle adjusting device 149 can be changed in the arrangement angle. As the first magnet 146, a permanent magnet or an electromagnet may be used.

The second cathode module 151 has a second target 152, a cylindrical second target holder 153 for supporting the second target 152, and a second target rotator for rotating the second target 152 ( 154, a second magnet unit 155 disposed inside the second target holder 153, and a second magnet unit angle adjusting device 159 for changing an arrangement angle of the second magnet unit 155. . As the second target rotating device 154, various devices capable of rotating the first target holder 143 to which the second target 152 is coupled, such as a motor, may be used. The second magnet unit angle adjusting device 159 may be a variety of devices capable of rotating the second magnet unit 155 at a predetermined angle, such as a motor.

The second magnet unit 155 is to form a magnetic field M outside the second target 152 and supports a plurality of second magnets 156 and second magnets 156 to support the second magnets 156. A second yoke 158 is coupled to the end of the member 157 and the second magnets 156. The second magnets 156 are arranged with the same magnetic pole facing the first target 142, and the second yoke 158 connects the ends of the second magnets 156 facing the first target 142. . The second yoke 158 serves to concentrate the magnetic field M by forming one magnetic pole having a magnetic force that sums the magnetic forces of the second magnets 156. The second magnet unit 155 is rotated by a predetermined angle by the second magnet unit angle adjusting device 159 can be changed in the arrangement angle. As the second magnet 156, a permanent magnet or an electromagnet may be used.

The first magnets 146 and the second magnets 156 are arranged so that opposite magnetic poles face each other. For example, as shown in the figure, the first magnets 146 have the N pole facing the second magnets 156 and the second magnets 156 having the S pole facing the first magnets 146. Can be deployed. Of course, the reverse arrangement is also possible. When the first magnets 146 and the second magnets 156 are arranged such that opposite magnetic poles face each other, the first magnetic unit 145 and the second magnet unit 155 connect the magnetic fields between them. M) is formed. The magnetic field M constrains the movement of electrons between the first target 142 and the second target 152 when the plasma is generated to increase the plasma density between the first target 142 and the second target 152. give.

The first target rotating device 144 and the second target rotating device 154 rotate the first target 142 and the second target 152 in opposite directions. For example, as shown in the figure, when the first target rotator 144 rotates the first target 142 counterclockwise, the second target rotator 154 watches the second target 152. Rotate in the direction. Of course, the opposite is also possible.

The structures of the sputter guns 140a, 140b, 140c, and 140d are not limited to those shown and may be variously changed. That is, the shapes of the targets 142 and 152 may be changed to other shapes other than the cylindrical shape, and the target rotating devices 144 and 154 or the magnet units 145 and 155 may be omitted.

As shown in FIG. 1, the cooling drum 170 guides the film-like deposit 10 along the plurality of deposition regions 113a, 113b, 113c, and 113d and simultaneously film-like blood. It serves to cool the deposit 10. The temperature of the film-form deposit 10 may increase while the deposition particles are deposited on the film-form deposit 10, and the film-form deposit 10 may be deformed or broken when heated to a predetermined temperature or more. The cooling drum 170 cools the film-like deposit 10 by passing through the plurality of deposition regions 113a, 113b, 113c, and 113d in contact with the film-like deposit 10. This will prevent deformation or breakage of (10).

The cooling drum 170 is cooled by receiving a cooling medium through the cooling system 172. The cooling system 172 includes a cooling medium feeder 173. The cooling medium supplier 173 is connected to the cooling medium circulation pipe 176 disposed inside the cooling drum 170 through the cooling medium supply pipe 174 and the cooling medium recovery pipe 175. The cooling medium supplied from the cooling medium supplier 173 is supplied to the cooling medium circulation pipe 176 through the cooling medium supply pipe 174, passes through the cooling medium circulation pipe 176, and then passes through the cooling medium recovery pipe 175. Through the recovery to the cooling medium feeder 173 again. The recovered cooling medium is cooled in the cooling medium supplier 173 and then supplied again to the cooling drum 170 through the cooling medium supply pipe 174. Various fluids such as water may be used as the cooling medium.

Hereinafter, a film forming process by the rotating cylindrical opposing target sputtering system 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2.

First, the vacuum chamber 110 is vacuumed using the vacuum pump 126. Thereafter, the sputtering gas is supplied into the vacuum chamber 110 and the winder 130 and the rewinder 131 are operated to move the film-shaped deposits 10 while moving the plurality of sputter guns 140a, 140b, 140c ( 140d) and cooling system 172 are operated. The plurality of sputter guns 140a, 140b, 140c on the surface of the film-form deposit 10 when the film-form deposit 10 passes through the plurality of deposition regions 113a, 113b, 113c, and 113d. Film-forming particles supplied by the cavities 140d are deposited. The action of the sputter guns 140a, 140b, 140c and 140d is as follows.

When a negative voltage is applied to each target 142 or 152 while rotating the first target 142 and the second target 152 of each of the sputter guns 140a, 140b, 140c and 140d, the glow of the sputtering gas Discharge is induced. The plasma generated by the glow discharge is concentrated between the first target 142 and the second target 152 by the magnetic field M formed by the first magnet unit 145 and the second magnet unit 155. . The cations in the plasma sputter the first target 142 and the second target 152, whereby the deposition particles are released from the respective targets 142 and 152 into the vapor phase. In this case, the particles having high energy such as electrons are confined in the space between the first target 142 and the second target 152 and move to the side of each target 142, 152. The film-forming particles having relatively low energy are diffused and deposited on the film-like deposit 10 passing through each of the deposition regions 113a, 113b, 113c, and 113d.

Thus, while the film-form deposit 10 passes through the plurality of deposition regions 113a, 113b, 113c and 113d, the cooling drum 170 in contact with the film-type deposit 10 is deposited. The film-form deposit 10 is cooled. In this case, the cooling medium flowing along the cooling medium circulation pipe 176 in the cooling drum 170 is recovered to the cooling medium supply unit 173 through the cooling medium recovery pipe 175 after cooling the cooling drum 170. Is cooled. The cooling medium cooled by the cooling medium supply unit 173 is supplied to the cooling drum 170 through the cooling medium supply pipe 174 again to take away the heat of the film-form deposit 10 and to raise the cooling drum 170 having a temperature rise. Cool continuously.

As described above, the roll-to-roll sputtering system 100 according to the present invention is a film type while the film-like deposit 10 passes through the plurality of deposition regions 113a, 113b, 113c, and 113d, and the film-forming particles are deposited. Since the vapor-deposited object 10 is cooled, the deformation | transformation and damage of the film-form vapor-deposited object 10 by heat can be prevented.

In addition, in the roll-to-roll sputtering system 100 according to the present invention, each of the sputter guns 140a, 140b, 140c, and 140d has a first target through the first magnet unit 145 and the second magnet unit 155. By forming a magnetic field M between the 142 and the second target 152 to constrain particles having high energy such as electrons between the first target 142 and the second target 152, the two targets 142. The influence by the particle | grains which have high energy on the film-form deposit 10 arrange | positioned so that it may orthogonally cross the arrangement direction of 152 can be reduced. Therefore, damage to the film-like deposit 10 can be greatly reduced, and the film-forming particles can be stably deposited on the film-like deposit 10 that is thin in thickness and susceptible to external impact.

In addition, the roll-to-roll sputtering system 100 according to the present invention rotates the targets 142 and 152 of each sputter gun 140a, 140b, 140c, 140d during the sputtering process, so that sputtering is a part of the target. Sputter the entire target evenly without focusing on. Therefore, the target utilization efficiency can be increased, and the deposition rate can also be increased.

On the other hand, the roll-to-roll sputtering system 100 according to the present invention changes the arrangement angle of the first magnet unit 145 and the second magnet unit 155 of each sputter gun 140a, 140b, 140c, 140d. As a result, various conveniences in the film forming process can be provided.

For example, when the first magnet unit 145 and the second magnet unit 155 are eccentric so as to be closer to the film-form deposit 10, the magnetic field M is formed closer to the film-type deposit 10, thereby forming a plasma concentration region. The film-like deposit 10 can be brought closer. In this case, the deposition rate of the deposition particles can be increased.

On the other hand, when the first magnet unit 145 and the second magnet unit 155 are eccentric away from the film type deposit 10 to form a magnetic field M away from the film type deposit 10, the plasma concentration region is formed. The film-like deposit 10 can be further moved away. In this case, the adverse effect of the film-form deposited 10 by the particle | grains which have high energy, such as an electron, can be further reduced.

As such, by varying the placement angles of the first magnet unit 145 and the second magnet unit 155 in various manners, the distance between the plasma concentration region and the film-like deposit 10 is adjusted to provide a kind of target material or a film type. According to the type of the deposit 10 can be made an optimum deposition environment, it is possible to vary the characteristics of the thin film deposited on the film-like deposit.

On the other hand, Figure 3 schematically shows a roll-to-roll sputtering system according to another embodiment of the present invention.

As shown in FIG. 3, the roll-to-roll sputtering system 200 according to another embodiment of the present invention has the same configuration as that of the roll-to-roll sputtering system 100 shown in FIG. 1. Hereinafter, in describing the rotating cylindrical opposing target sputtering system 200 according to the present embodiment, the same reference numerals are given to the same components as the roll-to-roll sputtering system 100 according to the embodiment of the present invention described above. The detailed description thereof will be omitted.

The rotating cylindrical opposing target sputtering system 200 according to the present embodiment may perform a film forming process on two film-like deposits 10a and 10b at the same time, and transports the first film-like deposit 10a. In addition to the first winder 130, the first rewinder 131, and the plurality of guide rollers 132, the second winder 230, the second rewinder for transferring the second film-like deposit 10b 231 and a plurality of guide rollers 232.

In the vacuum chamber 111, the first deposition regions 113a, 113b, 113c, 113d and the second film-form deposit 10b where the deposition particles are deposited on the first film-form deposit 10a are formed. Second deposition regions 213a, 213b, 213c, and 213d in which the deposition particles are deposited are provided. The first deposition regions 113a, 113b, 113c, and 113d are provided in plural along the circumference of the cooling drum 170, and the second deposition regions 213a, 213b, 213c, and 213d are each first. A plurality of deposition regions 113a, 113b, 113c, and 113d are provided to face each other. Sputter guns 140a, 140b and 140c for providing the deposition particles to the first deposition regions 113a, 113b, 113c and 113d and the second deposition regions 213a, 213b, 213c and 213d. 140d is disposed between the first deposition regions 113a, 113b, 113c, and 113d and the second deposition regions 213a, 213b, 213c, and 213d, respectively.

In the roll-to-roll sputtering system 200 according to the present embodiment, as shown in FIG. 4, the first winder 130 and the first rewinder 131 may be formed of a plurality of first film-like deposits 10a. While transferring along the first deposition regions 113a, 113b, 113c, and 113d, the second winder 230 and the second rewinder 231 transfer the second film-like deposit 10b to the plurality of films. By transferring along the two deposition regions 213a, 213b, 213c, and 213d, the film forming process can be simultaneously performed on the first film-form deposit 10a and the second film-form deposit 10b.

On the other hand, as shown in Figure 5, by changing the arrangement angle of the first magnet unit 145 and the second magnet unit 155 of each sputter gun 140a, 140b, 140c, 140d, each film type blood The deposition environment for the deposits 10a and 10b can be changed. That is, when the first magnet unit 145 and the second magnet unit 155 are disposed eccentrically toward the first film-form deposit 10a, the magnetic field M is biased toward the first film-type deposit 10a. Can be. When the magnetic field M is biased toward the first film-form deposit 10a, the plasma concentration region is biased toward the first film-type deposit 10a, so that the deposition rate can be increased with respect to the first film-type deposit 10a. In addition, the possibility of collision of particles having high energy such as electrons can be further reduced with respect to the second film-like deposit 10b. Therefore, the film-like deposits of different materials can be formed simultaneously by making the first film-like deposit 10a a relatively impact-resistant material and the second film-like deposit 10b a relatively weak material. Can be.

The roll-to-roll sputtering system according to the present invention as described above is a film-type polymer substrate, flexible using various target materials such as ITO, ZTO, GZO, AZO, IZTO, IZO, IGZO, FZO, FTO, ATO, BZO AMOLED, flexible organic solar cell, flexible touch panel, flexible transparent TFT, flexible OLED, flexible OTFT, flexible OPV and other protective films, transparent electrodes, metal electrodes, oxides, semiconductors, barriers (Barrier, Al ₂ O ₃ , SiON, SiO _2, can be formed by various thin film such as SiN, TiOx, Al).

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art can improve and modify the technical idea of the present invention in various forms. Accordingly, these modifications and variations are intended to fall within the scope of the present invention as long as it is obvious to those skilled in the art.

100, 200: roll to roll sputtering system 110: housing
111: vacuum chamber 113a-113d, 213a-213d: deposition area
115: bulkhead 120: sputtering gas supply
124: gas supply pipe 130, 230: winder
131, 231: rewinder 132, 232: guide roller
140a to 140d: Sputter Guns 141 and 151: First and Second Cathode Modules
142 and 152: first and second targets 143 and 153: first and second target holders
144, 154: first and second target rotating device 145, 155: first and second magnet unit
146, 156: first and second magnets 147, 157: first and second magnet support members
148, 158: 1st, 2nd yoke
149, 159: first and second magnet unit angle adjustment device
160a ~ 160d: Power 170: Cooling Drum
172: cooling system 173: cooling medium supply
174: cooling medium supply pipe 175: cooling medium recovery pipe
176: cooling medium circulation pipe

Claims (11)

A housing having a vacuum chamber;
A sputtering gas supplier for supplying a sputtering gas to the vacuum chamber;
A winder and a rewinder for winding or unwinding the film type deposits in cooperation with each other to continuously supply the film type deposits to a deposition region provided in the vacuum chamber;
A sputter gun having a first target and a second target disposed in the vacuum chamber and facing each other to supply the deposition particles to be deposited on the film-like deposit to the deposition region;
A power source for supplying discharge power to the sputter gun;
A cooling drum in contact with the film-like deposit passing through the deposition region to cool the film-like deposit;
A cooling system for supplying a cooling medium to the cooling drum to cool the cooling drum; And
A tension control unit disposed on the rewinder side to monitor the tension applied to the film-like deposit and control the speeds of the winder and the rewinder when a tension greater than or equal to a critical size is applied to the film-like deposit;
The sputter gun includes a first magnet unit disposed inside the first target and a second magnet unit disposed inside the second target to form a magnetic field between the first target and the second target. ,
The first magnet unit includes a plurality of first magnets arranged so that all of the same magnetic poles face the second target and a first yoke connecting the ends of the first magnets facing the second target,
The second magnet unit includes a plurality of second magnets disposed so that the magnetic poles opposite to the magnetic poles of the first magnets facing the second target face the first target and the ends of the second magnets facing the first target. Roll to roll sputtering system comprising a second yoke for connecting. The method of claim 1,
And a plurality of deposition regions are provided along the circumference of the cooling drum, and the sputter gun is disposed in the vacuum chamber to supply the deposition particles to each of the deposition regions. The method of claim 1,
And the deposition region is disposed in a direction orthogonal to an arrangement direction of the first target and the second target. The method of claim 3, wherein
The first target and the second target is made of a cylindrical shape,
The sputter gun further comprises a first target rotating device and a second target rotating device for rotating the first target and the second target, respectively. The method of claim 4, wherein
The sputter gun rotates the first magnet unit and the second magnet unit, respectively, so that the first magnet unit angle adjusting device and the second magnet unit change the placement angle of each of the first magnet unit and the second magnet unit. Roll to roll sputtering system further comprises an angle adjusting device. delete A housing having a vacuum chamber;
A sputtering gas supplier for supplying a sputtering gas to the vacuum chamber;
A first winder and a first rewinder for winding or unwinding the first film-like deposit to interlock with each other to continuously supply a first film-like deposit to a first deposition region provided in the vacuum chamber;
A second winder and a second rewinder for winding or unwinding the second film-like deposit to interlock with each other to continuously supply a second film-like deposit to the second deposition region provided in the vacuum chamber;
The first deposition region having a first target and a second target disposed to face each other, and for providing deposition particles sputtered from the first target and the second target to the first deposition region and the second deposition region; A sputter gun disposed between the second deposition region and the second deposition region;
A power source for supplying discharge power to the sputter gun;
A cooling drum contacting the first film-like deposit passing through the first deposition region to cool the first film-like deposit;
A cooling system for supplying a cooling medium to the cooling drum to cool the cooling drum; And
Disposed on the first rewinder side to monitor the tension applied to the first film-like deposit, and when the first film-like deposit is subjected to a tension above a critical size, the speeds of the first winder and the first rewinder It includes a tension control unit for controlling,
The sputter gun includes a first magnet unit disposed inside the first target and a second magnet unit disposed inside the second target to form a magnetic field between the first target and the second target. ,
The first magnet unit includes a plurality of first magnets arranged so that all of the same magnetic poles face the second target and a first yoke connecting the ends of the first magnets facing the second target,
The second magnet unit includes a plurality of second magnets disposed so that the magnetic poles opposite to the magnetic poles of the first magnets facing the second target face the first target and the ends of the second magnets facing the first target. Roll to roll sputtering system comprising a second yoke for connecting. The method of claim 7, wherein
The first deposition region may be provided in plural along the circumference of the cooling drum, and the second deposition region may be provided in plural so as to face each of the first deposition regions, and the sputter gun may face each other. A roll-to-roll sputtering system, disposed between each of the first deposition regions and each of the second deposition regions. The method of claim 7, wherein
The first target and the second target is made of a cylindrical shape,
The sputter gun further comprises a first target rotating device and a second target rotating device for rotating the first target and the second target, respectively. The method of claim 9,
The sputter gun rotates the first magnet unit and the second magnet unit, respectively, so that the first magnet unit angle adjusting device and the second magnet unit change the placement angle of each of the first magnet unit and the second magnet unit. Roll to roll sputtering system further comprises an angle adjusting device. delete

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