JP2004115841A - Magnetron sputtering electrode, film deposition system, and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To allow a substrate W to have a uniform film thickness distribution in a magnetron sputtering electrode which is provided with a magnet apparatus 8 forming leakage magnetic fields on the space on the surface side of a target 6, and with which magnetron sputtering where high density plasma is generated from an inert gas by the leakage magnetic fields owing to the magnet apparatus 8 and is converged on the target 6 is performed to deposit a film on the substrate W. <P>SOLUTION: The magnet apparatus 8 is provided with a central magnet 9 positioned on the central part of a cathode electrode 5, and two peripheral magnets 10 and 11 arranged so as to doubly surround the circumference of the central magnet 9. The polarities on the side of the target 6 in the adjacent magnets 9 to 11 are differentiated. Further, the intensity of the leakage magnetic field M2 formed between the adjoining magnets 10 and 11 in the outer circumferential part of the target 6 is made higher than that of the leakage magnetic field M1 between the adjacent magnets 9 and 10 in the central part, so that sputtering erosion in the surface of the target 6 in the outer circumferential part is made larger than that in the central part, and a film is deposited on the substrate W so that the central part and the peripheral part have the same film thickness. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention belongs to a technical field related to a magnetron sputter electrode, a film forming apparatus using the same, and a film forming method.
[0002]
[Prior art]
Conventionally, a magnetron sputtering method using a magnetron sputtering electrode of this type is generally known, and is used, for example, when a transparent conductive film or the like used for a liquid crystal display, a solar cell, a touch panel, a sensor, or the like is formed on a substrate. . The magnetron sputter electrode is installed in a vacuum film forming chamber having an atmosphere of an inert gas, and includes a cathode electrode and a film forming material arranged on the surface side of the cathode electrode so as to be parallel to the substrate. A target, and a magnet device for forming a leakage magnetic field (leakage magnetic field) in a space on the surface side of the target; a secondary magnetic field discharged from the substrate to the target by the leakage magnetic field formed in the space on the target surface side by the magnet device. Electrons are moved to generate high-density plasma from an inert gas, and magnetron sputtering for converging the high-density plasma on a target is performed to form a film on a substrate.
[0003]
By the way, conventionally, various magnet layouts have been proposed in a magnet device that forms a leakage magnetic field in the space on the target surface side. For example, as shown in FIGS. 6 and 7, a central magnet 9 located at the center of the target 6 and one peripheral magnet 10 arranged so as to endlessly surround the central magnet 9 are provided. The polarities of the magnets 9 and 10 on the surface side (target 6 side) are made different from each other. For example, the central magnet 9 has an N pole and the peripheral magnet 10 has an S pole as shown in the illustrated example (hereinafter referred to as Conventional Example 1). There is. In the figure, 14 is a yoke.
[0004]
As such a structure of Conventional Example 1, for example, those shown in Patent Literature 1 and Patent Literature 2 are known. In the former (Patent Document 1), the magnetic field generated by the magnet on the back surface of the cathode electrode is leaked to the target surface, and the outer periphery of the target is formed of a ferromagnetic material, and the direction of the magnetic field generated by the magnet is changed by the ferromagnetic material. By generating a leakage magnetic field over substantially the entire surface of the target, the erosion area of the target is widened to effectively use the target.
[0005]
On the other hand, in the case of the latter (Patent Document 2), when a transparent conductive film is formed on a substrate by magnetron sputtering, a specific magnetron cathode is used, and a magnetic flux integral value from a magnetic pole at the center of the cathode and a cathode outer periphery are used. By setting the ratio to the integral value of the magnetic flux from the magnetic pole to a predetermined value or more, a transparent conductive film having a low specific resistance can be stably manufactured even in a low-temperature substrate or a wide oxygen partial pressure region.
[0006]
As another magnet layout of a magnet device, as shown in FIGS. 10 and 11, a combination of the above-described central magnet 9 and peripheral magnet 10 is arranged in plural as a magnet unit (hereinafter, a conventional example). 2).
[0007]
As a structure of the conventional example 2, for example, a structure disclosed in Patent Document 3 is known. In this structure, a plurality of rectangular magnet units are arranged on the back surface of the target, and a magnetic shield is provided between the magnet units. It is made to even out the wear of the.
[0008]
Furthermore, as another layout of the magnet device, a plurality of peripheral magnets are arranged so as to surround the central magnet in a multiplex manner, and the polarity of the surface side between adjacent magnets along the direction connecting the central portion and the outer peripheral portion is determined. One different from each other (see FIG. 1, hereinafter referred to as Conventional Example 3) has been proposed. As the structure of the conventional example 3, for example, those shown in Patent Literature 4, Patent Literature 5, and Patent Literature 6 are known.
[0009]
In the technique disclosed in Patent Document 4, two or more pairs of N poles and S poles of a magnet are concentrically arranged in multiple pairs to generate multiple rings of plasma on the surface of the target, thereby reducing unevenness in consumption due to sputtering of the target. To increase usage efficiency. In the technique disclosed in Patent Document 5, a microwave is supplied to the outer periphery of a side surface of a dielectric of a target to make a reaction gas uniform and high-density by interaction with a magnetic field. By applying high-frequency power to the electrodes and causing plasma ions to be accelerated and incident on the target, a large-area substrate can be uniformly treated with high-vacuum and high-density plasma. Furthermore, in the technique disclosed in Patent Document 6, when a DC power is superimposed on a high-frequency power through a low-pass filter and supplied to a target to form a thin film, only the high-frequency power is periodically reduced or stopped. Thus, it is possible to prevent a transition from abnormal direct-current discharge to abnormal sustained discharge due to high frequency, and to safely return abnormal discharge to normal discharge without reducing productivity.
[0010]
[Patent Document 1]
Japanese Patent Publication No. 7-107188 [Patent Document 2]
JP-A-11-195333 [Patent Document 3]
JP-A-6-192833 [Patent Document 4]
JP-A-2-80565 [Patent Document 5]
JP-A-8-236448 [Patent Document 6]
JP-A-11-323543
[Problems to be solved by the invention]
However, all of the above-mentioned conventional examples 1 to 3 have the following problems. That is, in the structure of the conventional example 1, as shown in FIG. 7, a leakage magnetic field M is formed between the center magnet 9 and the peripheral magnet 10, and the high-density plasma P is generated by the leakage magnetic field M between the magnets 9 and 10. As shown in FIG. 8, the erosion of the target 6 proceeds at a portion corresponding to the position of the high-density plasma P, and the portion becomes a peak position E of the erosion rate. For this reason, the erosion rate of the target 6 becomes non-uniform, causing not only waste, but also a substrate (not shown) arranged in parallel to the target 6 as shown in FIG. As described above, a film-forming portion having two peaks having the maximum film thickness corresponding to the erosion rate peak positions E, E,... Of the target 6 is formed, and the film thickness distribution of both peaks is synthesized. As shown in b), the thickness of the central portion corresponding to the central magnet 9 is small, and the thickness of the peripheral portion corresponding to the position where the high-density plasma P is generated between the central magnet 9 and the peripheral magnet 10 is large. A distribution is obtained, and the film thickness distribution with respect to the substrate becomes non-uniform.
[0012]
Further, in the structure of Conventional Example 2, as shown in FIG. 11, similarly to the case of Conventional Example 1, the leakage magnetic field M formed between the plurality of central magnets 9, 9 and the peripheral magnets 10, 10, respectively. , M, the high-density plasmas P, P are generated, and as shown in FIG. 12, the erosion of the target 6 at a portion corresponding to the position of the high-density plasmas P, P proceeds, and the portion has an erosion rate. The peak position E is reached. Therefore, although the target erosion rate is slightly uniform as compared with the conventional example 1, the positions E and E at which the erosion rate of the target 6 reaches a peak as shown in FIG. ,... Are formed, and the film thickness distributions of these peaks are combined, as shown in FIG. 13 (b). A medium-to-high film thickness distribution with a large and small film thickness at the peripheral portion is obtained, and again the film thickness distribution with respect to the substrate becomes non-uniform.
[0013]
That is, in the structure of the conventional example 2, the film forming portion is finer and more uniform than the conventional example 1 with respect to the target 6 having the same area, but the intensity of the high-density plasma P and the peak position E of the erosion rate are reduced. Since the film thickness is constant without being changed, it cannot be suppressed that the film thickness distribution of the film-forming portion facing the target 6 that is uniformly consumed tends to be in the middle and high, and there is a limit in making the film thickness distribution uniform.
[0014]
Further, in Conventional Example 3 as well, in accordance with the same principle as in Conventional Example 2, the film thickness distribution of the substrate becomes non-uniform because the film thickness at the center is large and the film thickness at the peripheral portion is small.
[0015]
The present invention has been made in view of the above points, and an object of the present invention is to improve the configuration of the magnet device in the above-described magnetron sputtering electrode so that a uniform film thickness distribution can be obtained on the substrate. It is in.
[0016]
[Means for Solving the Problems]
In order to achieve the above object, the present invention employs the magnet layout of the magnet device of Conventional Example 3 described above, and further reduces the strength of the leakage magnetic field formed between the central magnet and the peripheral magnet and between the peripheral magnets. They were made different from each other, and the sputter erosion at the outer peripheral portion of the target was made larger than that at the central portion.
[0017]
Specifically, according to the first aspect of the present invention, a target made of a film-forming material is placed in a vacuum film-forming chamber having an atmosphere of an inert gas so as to be parallel to and opposed to a substrate as a film-forming target on the surface side of a cathode electrode. A magnet device that forms a leakage magnetic field in the space on the target surface side is provided, and magnetron sputtering that generates high-density plasma from the inert gas by the leakage magnetic field by the magnet device and converges on the target is performed. It is assumed that a magnetron sputter electrode is formed on the substrate.
[0018]
The magnet device includes a central magnet located at a central portion of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in a multiplex manner. The magnets adjacent to each other along the connecting direction have different polarities on the target side.
[0019]
Further, the intensity of the leakage magnetic field formed between the adjacent magnets at the outer peripheral portion of the target is formed between the adjacent magnets at the central portion such that the sputter erosion on the target surface becomes larger at the outer peripheral portion than at the central portion. It is set to be larger than the strength of the stray magnetic field.
[0020]
According to the configuration described above, the magnet device includes a central magnet located at the central portion of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in a multiplex manner. Since the magnets adjacent to each other along the direction connecting the two have different polarities on the target side, the substrate has the maximum film thickness corresponding to the position where the erosion of the target is maximum, as described above. A film forming portion having a plurality (even number) of peaks is formed (see FIG. 13A).
[0021]
If the strength of the stray magnetic field formed between the adjacent magnets in the outer peripheral portion of the target is the same as the strength of the stray magnetic field formed between the adjacent magnets in the central portion, the sputter erosion on the target surface is reduced to the central portion. And the outer periphery, and the magnitude of the peak of the film thickness in the film-forming portion of the substrate is also the same. Therefore, when the film thickness distribution is combined, the film having a large thickness in the central portion and a small thickness in the peripheral portion is obtained. It becomes a thickness distribution (see FIG. 13B).
[0022]
However, according to the present invention, the intensity of the stray magnetic field formed between the adjacent magnets in the outer peripheral portion of the target is greater than the strength of the stray magnetic field formed between the adjacent magnets in the central portion. At the outer periphery than at the center, the sputter erosion becomes non-uniform, and the peak of the film thickness at the film-forming portion of the substrate also becomes larger at the outer periphery than at the center. When combined, a film thickness distribution in which the film thickness in the center portion and the film thickness in the peripheral portion are the same is obtained, and therefore, the film thickness distribution with respect to the substrate can be made uniform.
[0023]
According to the second aspect of the present invention, at least one of the central magnet and the peripheral magnet is formed of an electromagnet, and by adjusting the magnetic force of the electromagnet, the leakage magnetic field intensity ratio between the outer peripheral portion and the inner peripheral portion of the target can be changed. It is characterized by having been done.
[0024]
In this case, by adjusting the magnetic force of the electromagnet including at least one of the central magnet and the peripheral magnet, the leakage magnetic field intensity ratio between the outer peripheral portion and the inner peripheral portion of the target is changed. As a result, while maintaining the strength of the stray magnetic field formed between the adjacent magnets at the outer periphery of the target at a greater value than the strength of the stray magnetic field formed between the adjacent magnets at the center, the strength of the stray magnetic field between the two is relatively increased. The thickness distribution of the substrate can be arbitrarily adjusted or changed.
[0025]
In the invention according to claim 3, the peripheral magnets are arranged in a rectangular frame shape. In the invention according to claim 4, the peripheral magnets are arranged annularly. According to these inventions, a desirable shape of the peripheral magnet is obtained.
[0026]
According to a fifth aspect of the present invention, there is provided a film forming apparatus including the magnetron sputtering electrode according to any one of the first to fourth aspects. Thus, a film forming apparatus capable of forming a film with a uniform film thickness distribution on a substrate by magnetron sputtering of a target can be obtained.
[0027]
According to the sixth aspect of the present invention, similarly to the above, a target made of a film forming material is placed in a vacuum film forming chamber having an atmosphere of an inert gas so as to be parallel and opposed to a substrate to be formed on the surface side of the cathode electrode. A magnet device that forms a leakage magnetic field in the space on the target surface side is provided, and magnetron sputtering that generates high-density plasma from the inert gas by the leakage magnetic field by the magnet device and converges on the target is performed. A method for forming a film on a substrate is premised.
[0028]
The magnet device includes a central magnet located at a central portion of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in a multiplex manner. The magnets adjacent to each other along the connecting direction have different polarities on the target side, and are formed between adjacent magnets on the outer peripheral portion of the target so that sputter erosion on the target surface is larger at the outer peripheral portion than at the central portion. The strength of the leaked magnetic field is made larger than the strength of the leaked magnetic field formed between the adjacent magnets at the center. According to this invention, the same operation and effect as those of the first aspect can be obtained.
[0029]
According to a seventh aspect of the present invention, in the film forming method of the sixth aspect, at least one of the center magnet and the peripheral magnet is an electromagnet, and the outer peripheral portion and the inner peripheral portion of the target are adjusted by adjusting the magnetic force of the electromagnet. Between the stray magnetic field strength ratios. According to this invention, the same operation and effect as those of the second aspect can be obtained.
[0030]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 5 shows a film forming apparatus A according to an embodiment of the present invention, in which 1 is a vacuum chamber, 2 is a vacuum film forming chamber formed in the vacuum tank 1 and kept in a vacuum state. The inside 2 is supplied with an inert gas such as Ar gas, for example, and has an atmosphere of the inert gas.
[0031]
The vacuum chamber 1 itself (the wall portion of the vacuum film forming chamber 2) serves as an anode electrode. For example, in the upper part of the vacuum film forming chamber 2, a transparent material used for a liquid crystal display, a solar cell, a touch panel, a sensor, or the like is provided. A substrate W as a film formation target on which a conductive film or the like is formed is arranged at a position facing a target 6 described later. The substrate W is held in a state of being electrically conducted from the vacuum chamber 1 on the anode electrode side by the substrate holder 3, and the substrate holder 3 and the substrate W are maintained at the same potential as the vacuum chamber 1 (anode electrode). (Note that the substrate holder 3 and the substrate W may be insulated from the vacuum chamber 1 and set at an intermediate potential or another potential).
[0032]
For example, a rectangular opening 1a is formed in a lower wall portion of the vacuum chamber 1, and a magnetron sputter electrode 4 is provided at a lower portion in the vacuum film forming chamber 2 so as to close the opening 1a. The magnetron sputtering electrode 4 includes a rectangular box-shaped cathode electrode 5 which is opened upward (inside of the vacuum deposition chamber 2) and can be fitted into the opening 1a. Is provided with a flange portion 5a projecting over the extension of the bottom wall portion, and the cathode electrode 5 is fitted into the opening 1a of the vacuum chamber 1 with a gap for electrical insulation, and the flange portion 5a is insulated. The opening 1a of the vacuum chamber 1 is hermetically closed by being attached to the outer surface (lower surface) of the lower wall of the vacuum chamber 1 around the opening 1a via the body 5b.
[0033]
On the surface side of the cathode electrode 5 (substrate holder 3 side), a flat target 6 made of a film-forming material is arranged in parallel with and opposed to the substrate W. The target 6 is in the form of a rectangular plate having the same size as the above-mentioned cathode electrode 5, and the opening of the cathode electrode 5 is sealed in a liquid-tight manner. The cooling water is filled and circulated.
[0034]
Further, between the target 6 and the cathode electrode 5 (inside the cathode electrode 5), a magnet device 8 for forming the leakage magnetic fields M1 and M2 in a space on the surface side of the target 6 is arranged. By supplying high-frequency power (or applying a high DC voltage) between the substrate holder 3 and the substrate W and the cathode electrode 5 that are electrically connected to the cathode W, an electric field from the substrate W toward the cathode electrode 5 is formed. By discharging, secondary electrons generated from the cathode electrode 5 by this discharge are moved by a component parallel to the surface of the target 6 in the stray magnetic fields M1 and M2 by the magnet device 8 to collide with the inert gas to produce high-density plasma. Magnetron sputtering that generates P1 and P2 and converges it on the target 6 is performed, and a film is formed on the substrate W to form a film forming unit W1.
[0035]
The feature of the present invention resides in the magnet device 8 described above. That is, as shown in FIGS. 1 and 2, the magnet device 8 includes a yoke 14 made of a magnetic material disposed on the bottom surface in the cathode electrode 5, and a target 6 (cathode electrode 5) A central magnet 9 composed of a rectangular straight rod-shaped permanent magnet arranged to be located at the center, and a rectangular frame-shaped arrangement on the yoke 14 so as to surround the central magnet 9 at substantially constant intervals. An inner peripheral magnet 10 made of a permanent magnet and an outer peripheral magnet 11 made of a permanent magnet arranged on a yoke 14 in a rectangular frame shape so as to surround the inner peripheral magnet 10 at substantially constant intervals. ing. Each of the peripheral magnets 10, 11 has a pair of short sides 12, 12 and a pair of long sides 13, and the short sides 12, 12 and the long sides 13, 13 face each other and are short. They are arranged in a rectangular frame shape so that corners inside (side of the center magnet 9) of each of the side portion 12 and the long side portion 13 are in contact with each other. Therefore, the two peripheral magnets 10 and 11 are arranged so as to double surround the center magnet 9.
[0036]
The polarities on the surface side (target 6 side) of the central magnet 9 and the outer peripheral magnet 11 are both set to, for example, N pole, and the polarities on the surface side (target 6 side) of the inner peripheral magnet 10 are set to the S pole. The magnets 9 to 11 adjacent to each other along the direction connecting the central portion and the outer peripheral portion of the target 6 have different polarities on the target 6 side.
[0037]
Then, as shown in FIG. 2, the strength of the leakage magnetic field M2 formed between the adjacent outer and inner peripheral magnets 10 and 11 in the outer peripheral portion of the target 6 increases the intensity of the adjacent inner peripheral magnet 10 and central magnet 9 in the central portion. As shown in FIG. 3, the intensity of the leakage magnetic field M1 formed between the target 6 and the sputter erosion formed on the surface of the target 6 in accordance with the respective leakage magnetic fields M1 and M2 is larger at the outer peripheral portion than at the central portion. It is set to be large. In FIG. 3, E is the peak position of the target erosion rate.
[0038]
Therefore, in this embodiment, the magnet device 8 of the magnetron sputter electrode 4 includes a center magnet 9 located at the center of the cathode electrode 5 and an inner and outer 2 arranged so as to surround the center magnet 9 doubly. Since two peripheral magnets 10 and 11 are provided, and the magnets 9 to 11 adjacent to each other along the direction connecting the central portion and the outer peripheral portion of the target 6 have different polarities on the surface side (target 6 side). As shown in FIG. 4A, the substrate W has four peaks at which the film thickness becomes maximum corresponding to the peak positions E, E,... Of the erosion rate of the target 6 (see FIG. 3). The film part W1 is formed.
[0039]
As shown in FIG. 2, the intensity of the leakage magnetic field M2 formed between the adjacent magnets 10 and 11 in the outer peripheral portion of the target 6 is greater than the intensity of the leakage magnetic field M1 formed between the adjacent magnets 9 and 10 in the central portion. Therefore, the intensity of the high-density plasma P2 generated by the leakage magnetic field M2 is higher than that of the high-density plasma P1 generated by the leakage magnetic field M1, and as shown in FIG. It becomes larger at the outer peripheral part. Due to the non-uniformity of the sputter erosion, the size of the four peaks of the film thickness of the film-forming portion W1 of the substrate W also becomes larger at the outer peripheral portion than at the central portion. If the intensity of the leakage magnetic field M2 formed between the adjacent magnets 10 and 11 in the outer peripheral portion of the target 6 and the intensity of the leakage magnetic field M1 formed between the adjacent magnets 9 and 10 in the central portion are the same, the sputtering on the surface of the target 6 is performed. As in the case where the erosion is the same between the central portion and the outer peripheral portion (see FIGS. 12 and 13), the film thickness at the central portion does not become larger than that at the peripheral portion. A film thickness distribution having the same thickness can be obtained. Therefore, the film thickness distribution of the film formation unit W1 with respect to the substrate W can be made uniform.
[0040]
(Other embodiments)
It should be noted that the present invention is not limited to the above embodiment, but includes various other embodiments. For example, in the above-described embodiment, permanent magnets are used as the central magnet 9 and the two peripheral magnets 10 and 11 in the magnet device 8 of the magnetron sputtering electrode 4, but these central magnet 9 and the two peripheral magnets 10 and 11 are used. May be replaced with an electromagnet, and by adjusting the magnetic force (magnetic flux density) of the electromagnet, the intensity ratio of the leakage magnetic fields M1 and M2 between the outer peripheral portion and the inner peripheral portion of the target 6 may be changed. In this case, the strength of the stray magnetic field M2 formed between the adjacent magnets 10 and 11 in the outer peripheral portion of the target 6 is made larger than the strength of the stray magnetic field M1 formed between the adjacent magnets 9 and 10 in the central portion. Of course.
[0041]
In this case, the magnetic force of the electromagnet including at least one of the central magnet 9 and the peripheral magnets 10 and 11 is adjusted so that the intensity ratio of the leakage magnetic fields M1 and M2 between the outer peripheral portion and the inner peripheral portion of the target 6 is reduced. Since the intensity of the leakage magnetic field M2 formed between the adjacent magnets 10 and 11 in the outer peripheral portion of the target 6 is larger than the intensity of the leakage magnetic field M1 formed between the adjacent magnets 9 and 10 in the central portion, The intensity of the leakage magnetic fields M1 and M2 can be relatively changed, and the film thickness distribution of the substrate W can be arbitrarily adjusted or changed.
[0042]
In the above embodiment, the double peripheral magnets 10 and 11 are provided. However, it goes without saying that the peripheral magnets may be triple or more.
[0043]
Furthermore, in the above-described embodiment, the peripheral magnets 10 and 11 are arranged in a rectangular frame shape. However, the peripheral magnets 10 and 11 may be arranged in a ring shape such as a circular shape, an elliptical shape, an elliptical shape, or other shapes. What is necessary is just to change according to the shape of the target 6.
[0044]
【The invention's effect】
As described above, according to the first or sixth aspect of the present invention, there is provided a magnet device for forming a stray magnetic field in a space on the target surface side, and a high-density plasma is generated from an inert gas by the stray magnetic field by the magnet device. In the case of performing magnetron sputtering to converge on the substrate, when forming a film on the substrate, a magnet device, a central magnet located in the center of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in multiple layers The adjacent magnets have different target-side polarities, and the strength of the stray magnetic field formed between the adjacent magnets at the outer periphery of the target is reduced by the strength of the stray magnetic field between the adjacent magnets at the center. The sputter erosion on the target surface is made larger at the outer periphery than at the center, Its central portion and peripheral portion can be formed to have the same thickness, thus it is possible to improve the deposition quality by the uniform film thickness distribution at the time of film formation by magnetron sputtering to the substrate to.
[0045]
According to the invention of claim 2 or 7, at least one of the central magnet and the peripheral magnet is used as an electromagnet, and the magnetic force of the electromagnet is adjusted to change the leakage magnetic field intensity ratio between the outer peripheral portion and the inner peripheral portion of the target. By making it possible, the intensity of the stray magnetic field formed between the adjacent magnets at the outer periphery of the target is maintained greater than that between the adjacent magnets at the center, while the intensity of the stray magnetic field between the two is relatively changed. Thus, the thickness distribution of the substrate can be arbitrarily adjusted or changed.
[0046]
In the invention of claim 3, the peripheral magnets are arranged in a rectangular frame shape. In the invention according to claim 4, the peripheral magnets are arranged annularly. According to these inventions, a desirable shape of the peripheral magnet is obtained.
[0047]
According to the fifth aspect of the present invention, by providing the film forming apparatus provided with the magnetron sputtering electrode according to any one of the first to fourth aspects, the target is subjected to magnetron sputtering so that the film thickness distribution is uniformly formed on the substrate. A film forming apparatus capable of forming a film is obtained.
[Brief description of the drawings]
FIG. 1 is a plan view of a magnetron sputter electrode according to an embodiment of the present invention.
FIG. 2 is a sectional view of a magnetron sputter electrode.
FIG. 3 is a sectional view showing target erosion.
FIG. 4 is a diagram showing a film thickness distribution of a film forming unit with respect to a substrate.
FIG. 5 is a schematic diagram of a film forming apparatus according to an embodiment.
FIG. 6 is a diagram corresponding to FIG.
FIG. 7 is a diagram corresponding to FIG. 2, showing Conventional Example 1.
FIG. 8 is a diagram corresponding to FIG. 3, showing Conventional Example 1.
FIG. 9 is a diagram corresponding to FIG. 4, showing Conventional Example 1.
FIG. 10 is a diagram corresponding to FIG.
11 is a diagram corresponding to FIG. 2, showing Conventional Example 2. FIG.
FIG. 12 is a diagram corresponding to FIG. 3, showing Conventional Example 2.
FIG. 13 is a diagram corresponding to FIG.
[Explanation of symbols]
A Film forming apparatus W Substrate W1 Film forming section M1, M2 Leakage magnetic field P1, P2 High density plasma 1 Vacuum chamber 2 Vacuum film forming chamber 4 Magnetron sputter electrode 5 Cathode electrode 6 Target 8 Magnet device 9 Central magnet 10 Inner peripheral magnet 11 Outside Peripheral magnet 14 yoke

Claims (7)

A target made of a film forming material is arranged in a vacuum film forming chamber having an atmosphere of an inert gas so as to be parallel to and opposed to a substrate to be formed on the surface side of the cathode electrode, and leaks into a space on the target surface side. A magnet device for forming a magnetic field is provided, and magnetron sputtering is performed so that a high-density plasma is generated from the inert gas by a leakage magnetic field by the magnet device and converged on a target, and the magnetron sputtering electrode is formed on the substrate. ,
The magnet device includes a central magnet located at a central portion of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in a multiplex manner, and a direction connecting the central portion and an outer peripheral portion. The magnets adjacent to each other have different target-side polarities,
The intensity of the stray magnetic field formed between adjacent magnets in the outer peripheral portion of the target is increased so that the sputter erosion on the target surface becomes larger in the outer peripheral portion than in the central portion. A magnetron sputter electrode characterized in that the strength is greater than the strength of the magnetron sputter electrode. The magnetron sputtering electrode according to claim 1,
At least one of the central magnet and the peripheral magnet is made of an electromagnet,
A magnetron sputtering electrode, wherein a leakage magnetic field intensity ratio between an outer peripheral portion and an inner peripheral portion of the target can be changed by adjusting a magnetic force of the electromagnet. The magnetron sputter electrode according to claim 1 or 2,
A magnetron sputtering electrode, wherein peripheral magnets are arranged in a rectangular frame shape. The magnetron sputter electrode according to claim 1 or 2,
A magnetron sputtering electrode, wherein peripheral magnets are arranged in a ring shape. A film forming apparatus comprising the magnetron sputter electrode according to claim 1. A target made of a film forming material is arranged in a vacuum film forming chamber having an atmosphere of an inert gas so as to be parallel to and opposed to a substrate to be formed on the surface side of the cathode electrode, and leaks into a space on the target surface side. A magnet device for forming a magnetic field is provided, and magnetron sputtering for generating high-density plasma from the inert gas by a leakage magnetic field by the magnet device and converging it on a target is performed.
The magnet device includes a central magnet located at a central portion of the target, and a plurality of peripheral magnets arranged so as to surround the central magnet in a multiplex manner, and a direction connecting the central portion and an outer peripheral portion. The magnets adjacent to each other have different target-side polarities,
The intensity of the stray magnetic field formed between adjacent magnets in the outer peripheral portion of the target is set so that the sputter erosion on the target surface becomes larger in the outer peripheral portion than in the central portion. A film formation method characterized by making the strength larger than the strength of the film. The film forming method according to claim 6,
At least one of the central magnet and the peripheral magnet is an electromagnet,
A film forming method, wherein a leakage magnetic field intensity ratio between an outer peripheral portion and an inner peripheral portion of a target is changed by adjusting a magnetic force of the electromagnet.

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