CN115287614A - Method for improving TCO film thickness uniformity of CIGS chip and film coating device - Google Patents
Method for improving TCO film thickness uniformity of CIGS chip and film coating device Download PDFInfo
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- CN115287614A CN115287614A CN202210871504.5A CN202210871504A CN115287614A CN 115287614 A CN115287614 A CN 115287614A CN 202210871504 A CN202210871504 A CN 202210871504A CN 115287614 A CN115287614 A CN 115287614A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The invention relates to the technical field of magnetron sputtering coating, in particular to a method and a coating device for improving the thickness uniformity of TCO (transparent conductive oxide) films of CIGS (copper indium gallium selenide) chips, wherein the magnetic field intensity is enhanced within a certain range to improve the sputtering rate, so that the sputtering rate at two ends of a target is higher than that at the middle position, the film layers deposited on two ends of a substrate are thicker than that before, the difference of the thickness uniformity of the films can be about 1 percent by controlling the sputtering power and the magnetic field intensity increase degree of a magnet, the problem of poor film thickness uniformity can be solved, the total sputtering rate cannot be reduced, but the total sputtering rate is increased, the total film thickness can be ensured, the uniformity of the film thickness is improved, the color difference problem of the chips is solved, meanwhile, the service life of a single target is prolonged to five production cycles from the original four production cycles, the cost of the AZO target in a single production cycle is reduced, and the utilization rate of the target is improved.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering coating, in particular to a method and a coating device for improving the TCO film thickness uniformity of a copper indium gallium selenide chip.
Background
TCO is a general name of transparent conductive oxide, common transparent conductive oxides include ITO, AZO, BZO and the like, a CIGS chip mainly adopts AZO (aluminum-doped zinc oxide conductive material) as a material of a front electrode window layer, the existing AZO film layer is obtained by sputtering two types of targets of intrinsic zinc oxide and zinc oxide doped with aluminum 2 wt% through Wen Cikong, but due to a magnetron sputtering angle and an edge winding plating effect, the film layer thickness at two ends of the target, namely the edge of a substrate, is thinner than that at the middle position, so that the edge color difference is obvious, the two ends display purplish colors, the middle is greenish, and the film thickness unevenness is about 4%.
In order to reduce the problems of non-uniformity of film thickness and chromatic aberration of different positions of a chip, the problem of uniformity of film thickness is solved by adding a baffle plate, namely adding the baffle plate on one of four i-ZnO cylindrical targets at the middle position to block sputtering at the middle position, attaching a film layer on the baffle plate, and normally sputtering the film thickness at two ends on a substrate, so that the film thickness at two ends can be compensated; adding a baffle to one of four cylindrical targets in two cavities of AL-ZnO, namely, using the baffle to compensate the film thickness of two ends of one target in the two cavities; after the baffle is added, under the same film thickness condition, the effective sputtering power is reduced, so that the sputtering rate is reduced, the total power of i-ZnO is changed from 12kw to about 16kw, and the total power of AL-ZnO is changed from 27kw to 32kw; the power consumption of the AZO target material in a single production period is increased, the service life of the single target can only be used for four times under the condition that the total thickness of the target material is not changed, and the cost of the target material in the single production period is increased.
Disclosure of Invention
In view of the above, the present invention provides a method and a coating apparatus for improving the TCO film thickness uniformity of a cigs chip to solve the problem of increased power consumption of a target due to reduction of film thickness non-uniformity by a baffle.
Based on the aim, the invention provides a method for improving the thickness uniformity of a TCO film of a CIGS chip, which comprises the steps of carrying out low-temperature magnetron sputtering on two types of targets, namely intrinsic zinc oxide and aluminum-doped 2 wt% zinc oxide, to form an i-ZnO film and an AL-ZnO film, wherein the i-ZnO film is obtained by sputtering four cylindrical targets in one cavity, and the AL-ZnO film is obtained by sputtering eight cylindrical targets in two cavities;
the method also comprises the following steps:
the magnetic field intensity of permanent magnets used at the two ends of the third cylindrical target and the fourth cylindrical target is improved, so that the magnetic field intensity at the two ends of the third cylindrical target and the fourth cylindrical target is higher than that in the middle;
controlling the sputtering power to match with the adjusted magnetic field intensity, so that the film thickness of the i-ZnO film and the film thickness of the AL-ZnO film meet the preset requirement.
Preferably, each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group, two long-side edge magnet groups are respectively arranged on the long sides of the middle magnet group, the two long-side edge magnet groups are symmetrical to each other, and 1 short-side edge magnet is respectively arranged on the short-side edge of the middle magnet group;
the middle magnet group comprises 42 first magnets which are sequentially arranged, the N poles of the first magnets are upward, and the long edge magnet group comprises 42 second magnets which are sequentially arranged, and the S poles of the second magnets are upward;
increasing the magnetic field strength of permanent magnets used at both ends of a cylindrical target comprises:
the remanence induction intensity of three first magnets at two ends of the middle magnet group is increased by 2.1-5.7%, and the remanence induction intensity of 4 second magnets at two ends of the long edge magnet group is increased by 2.1-5.7%.
Preferably, the magnet grades of the 36 first magnets in the middle magnet group, the 34 magnets in the middle long-side magnet group and the short-side magnets are NdFeB 50M, the magnet remanence is 13900Gs,
increasing the magnetic field strength of permanent magnets used at both ends of a cylindrical target comprises:
the magnet marks of three first magnets at two ends of the middle magnet group are changed into NdFeB 52M, the remanence is 14200-14700 Gs, the magnet marks of 4 second magnets at two ends of the long-edge magnet group are changed into NdFeB 52M, and the remanence is 14200-14700 Gs.
The specification further provides a coating device for improving the thickness uniformity of the TCO film of the CIGS chip, which comprises a first cavity and two second cavities, wherein four intrinsic zinc oxide cylindrical target materials are arranged in the first cavity and used for depositing on a target substrate through low-temperature magnetron sputtering to obtain an i-ZnO film, four aluminum-doped zinc oxide cylindrical target materials are arranged in the second cavity and used for depositing on the target substrate through low-temperature magnetron sputtering to obtain an AL-ZnO film, the magnetic field strengths of permanent magnets used at two ends of a third cylindrical target material and a fourth cylindrical target material in the first cavity and the second cavity are higher than that of a permanent magnet at the middle position, and the magnetic field strengths of the permanent magnets at the middle positions of the third cylindrical target material and the fourth cylindrical target material are the same as that of the permanent magnets on the first cylindrical target material and the second cylindrical target material.
Preferably, each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group, two long-side edge magnet groups are respectively arranged on the long sides of the middle magnet group, the two long-side edge magnet groups are symmetrical to each other, and 1 short-side edge magnet is respectively arranged on the short-side edge of the middle magnet group;
the middle magnet group comprises 42 first magnets which are sequentially arranged, the N poles of the first magnets are upward, and the long edge magnet group comprises 42 second magnets which are sequentially arranged, and the S poles of the second magnets are upward;
the remanence of each three first magnets at the two ends of the middle magnet group is 2.1-5.7% higher than that of other first magnets, and the remanence of each 4 second magnets at the two ends of the long-edge magnet group is 2.1-5.7% higher than that of other second magnets.
Preferably, the magnet grades of the 36 first magnets in the middle of the middle magnet group, the 34 magnets in the middle of the long-side edge magnet group and the short-side magnets are all NdFeB 50M, the magnet remanence is 13900Gs, the magnet grade of each of the three first magnets at the two ends of the middle magnet group is NdFeB 52M, the remanence is 14200-14700 Gs, the magnet grade of each of the 4 second magnets at the two ends of the long-side edge magnet group is NdFeB 52M, and the remanence is 14200-14700 Gs.
Preferably, the first magnet is a rectangular parallelepiped structure with dimensions 1 × 0.867 × 0.724 inch, the second magnet is a trapezoidal body structure with a top disposed at an oblique angle with dimensions 1 × 0.815 × 0.362 inch, wherein 0.815 inch is the length of the short side of the trapezoid, the length of the long side of the trapezoid is 0.933 inch, and the magnets on the side of the short side are rectangular parallelepiped structures with dimensions 1.466 × 0.750 inch and 0.408 inch.
The invention has the beneficial effects that: the magnetic field intensity is enhanced within a certain range to improve the sputtering rate, so that the sputtering rates at two ends of the target are higher than the middle position, the film layers deposited on two ends of the substrate are thicker than the former films, the difference of the film thickness uniformity can be about 1% by controlling the sputtering power to match with the magnetic field intensity increasing degree of the magnet, particularly, the sputtering power can be subjected to feedback regulation according to the actual thickness of the coated film, the problem of poor film thickness uniformity can be solved, the total sputtering rate cannot be reduced, but the total film thickness can be increased, the film thickness uniformity can be ensured and improved under the condition of not increasing the sputtering power, the problem of color difference of a chip is solved, meanwhile, the service life of a single target is prolonged from the original four-time production period, the service life can be prolonged to five production periods, the cost of the AZO target in a single production period is reduced, and the target utilization rate is improved.
Drawings
In order to more clearly illustrate the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a prior art for solving the problem of film thickness uniformity by adding baffles, wherein 1 is a chamber, 2 is a cylindrical target, and 3 is a baffle;
FIG. 2 is a schematic diagram of a cylindrical target cathode magnet structure according to an embodiment of the present invention;
fig. 3 is a partially enlarged view of a portion a in fig. 2 according to an embodiment of the invention.
1. A cavity; 2. a cylindrical target material; 3. a baffle plate; 4. a middle magnet group; 41. a first magnet; 5. a long edge magnet group; 51. a second magnet; 6. short side edge magnets.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to specific embodiments below.
It is to be noted that technical terms or scientific terms used herein should have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. The use of "first," "second," and the like, herein does not denote any order, quantity, or importance, but rather the terms "first," "second," and the like are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
In the existing i-ZnO and AL-ZnO target cathode systems, the cathode systems of every four targets in each cavity are uniform, the magnetic field distribution of the cathode system of each target is consistent, and the grades and the magnetism of permanent magnets are the same.
As shown in fig. 2 to fig. 3, an embodiment of the present disclosure provides a method for improving the uniformity of the TCO film thickness of a cigs chip, including performing low-temperature magnetron sputtering on two types of targets, namely intrinsic zinc oxide and aluminum-doped 2 wt% zinc oxide, in sequence to form an i-ZnO film and an AL-ZnO film, where the i-ZnO film is obtained by sputtering four cylindrical targets in one chamber, and the AL-ZnO film is obtained by sputtering eight cylindrical targets in two chambers, and the method further includes:
the magnetic field intensity of permanent magnets used at the two ends of the third cylindrical target material and the fourth cylindrical target material is improved, so that the magnetic field intensity at the two ends of the third cylindrical target material and the fourth cylindrical target material is higher than that in the middle;
controlling the sputtering power to match with the adjusted magnetic field intensity, so that the film thickness of the i-ZnO film and the film thickness of the AL-ZnO film meet the preset requirement.
By the means, the magnetic field intensity is enhanced within a certain range to improve the sputtering rate, so that the sputtering rates at two ends of the target are higher than the middle position, the film layers deposited on two ends of the substrate are thicker than the former, the difference of the film thickness uniformity can be about 1% by controlling the sputtering power to match with the magnetic field intensity increasing degree of the magnet, specifically, the sputtering power can be subjected to feedback regulation according to the actual thickness of the coated film, the problem of poor film thickness uniformity can be solved, the total sputtering rate cannot be reduced but is increased, so that the total film thickness can be ensured and the uniformity of the film thickness can be improved under the condition of not increasing the sputtering power, the problem of color aberration of a chip is solved, meanwhile, the service life of a single target is prolonged to five production periods from the original four production periods, the service life of the single target is prolonged to five production periods, the cost of the AZO target in a single production period is reduced, and the utilization rate of the target is improved.
As an embodiment, each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group 4, two long-side edge magnet groups 5 are respectively arranged on the long sides of the middle magnet group 4, the two long-side edge magnet groups 5 are mutually symmetrical, and 1 short-side edge magnet 6 is respectively arranged on the short-side edge of the middle magnet group 4;
the middle magnet group 4 comprises 42 first magnets 41 which are sequentially arranged and the N poles of which are upward, and the long-edge magnet group 5 comprises 42 second magnets 51 which are sequentially arranged and the S poles of which are upward;
increasing the magnetic field strength of permanent magnets used at both ends of a cylindrical target comprises:
the remanence of the three first magnets 41 at the two ends of the middle magnet group 4 is increased by 2.1-5.7%, and the remanence of the 4 second magnets 51 at the two ends of the long-side edge magnet group 5 is increased by 2.1-5.7%.
For example, the magnet marks of the middle 36 first magnets 41 in the middle magnet group 4, the middle 34 magnets in the long-side edge magnet group 5, and the short-side magnets 6 are NdFeB 50M, the magnet remanence is 13900Gs,
the method for improving the magnetic field intensity of the permanent magnets used at the two ends of the cylindrical target material comprises the following steps:
the magnet marks of the three first magnets 41 at the two ends of the middle magnet group 4 are changed into NdFeB 52M, the remanence is 14200-14700 Gs, the magnet marks of the 4 second magnets 51 at the two ends of the long-edge magnet group 5 are changed into NdFeB 52M, and the remanence is 14200-14700 Gs.
The optimized cathode magnetic field is compared with the original film thickness data without the baffle plate, such as the following table 1:
| position of | RC |
1 | 2 | 5 | 9 | 13 | 17 | 20 | 21 | Uniformity |
| Before optimization | AZO(A) | 3701 | 3811 | 4016 | 4052 | 4082 | 4061 | 3812 | 3689 | 4.00％ |
| After optimization | AZO(A) | 3915 | 3989 | 4022 | 4017 | 4043 | 4044 | 3988 | 3946 | 1.08％ |
TABLE 1
Before optimization, the film thickness data of the substrate corresponding to the strip position from top to bottom is as shown in the table, and the Uniformity is 4%.
After the magnetic field is optimized according to the optimization method, the film thickness at the strip1/2/20/21 position is improved, the uniformity of the optimized film thickness is 1.08%, and the uniformity of the AZO film thickness is improved by about 3%.
The embodiment of the specification further provides a coating device for improving the thickness uniformity of the TCO film of the CIGS chip, and the coating device comprises a first cavity and two second cavities, wherein four intrinsic zinc oxide cylindrical targets are arranged in the first cavity and used for depositing on a target substrate through low-temperature magnetron sputtering to obtain an i-ZnO film, four aluminum-doped zinc oxide cylindrical targets are arranged in the second cavity and used for depositing on the target substrate through low-temperature magnetron sputtering to obtain an AL-ZnO film, the magnetic field strength of permanent magnets used at two ends of a third cylindrical target and a fourth cylindrical target is higher than that of a permanent magnet at the middle position, and the magnetic field strength of the permanent magnet at the middle position of the third cylindrical target and the fourth cylindrical target is the same as that of permanent magnets on the first cylindrical target and the second cylindrical target.
For example, the first chamber and the second chamber are installed in a continuous roll-to-roll coating apparatus.
As an embodiment, each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group 4, two long-side edge magnet groups 5 are respectively arranged on the long sides of the middle magnet group 4, the two long-side edge magnet groups 5 are symmetrical to each other, and 1 short-side edge magnet 6 is respectively arranged on the short side edge of the middle magnet group 4;
the middle magnet group 4 comprises 42 first magnets 41 which are sequentially arranged and the N poles of the first magnets are upward, and the long-edge magnet group 5 comprises 42 second magnets 51 which are sequentially arranged and the S poles of the second magnets are upward;
the remanence of each of the three first magnets 41 at the two ends of the middle magnet group 4 is 2.1% -5.7% higher than that of the other first magnets 41, and the remanence of each of the 4 second magnets 51 at the two ends of the long-side edge magnet group 5 is 2.1% -5.7% higher than that of the other second magnets 51.
For example, the magnet marks of the middle 36 first magnets 41 in the middle of the middle magnet group 4, the middle 34 magnets in the long-side edge magnet group 5, and the short-side magnets 6 are all NdFeB 50M, the magnet remanence is 13900Gs, the magnet marks of the three first magnets 41 at both ends of the middle magnet group 4 are NdFeB 52M, the remanence is 14200-14700 Gs, the magnet marks of the 4 second magnets 51 at both ends of the long-side edge magnet group 5 are NdFeB 52M, and the remanence is 14200-14700 Gs.
The embodiment is optimized from the design of a cathode hardware system, the magnetic field can be adjusted by permanent magnets with different magnetism, the operability is strong, other hardware or software is not required to be modified, the requirement of the total film thickness can be met, the uniformity of the film thickness can be independently adjusted, the problem of chromatic aberration is solved, the utilization rate of the target material is improved, and the service life of the target material is prolonged to five production periods.
The third cylindrical target and the fourth cylindrical target referred in the embodiments of the present disclosure refer to the third cylindrical target and the fourth cylindrical target counted from the sputtering direction, and other alternative solutions of the present embodiment are to adjust the magnetic fields of the cathodes of the first cylindrical target and the second cylindrical target, so that the film thickness uniformity can be improved on the premise of satisfying the chip performance, and the solution is also considered to be feasible.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to those examples; within the idea of the invention, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity.
The present invention is intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, substitutions, improvements and the like that may be made without departing from the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
1. A method for improving the thickness uniformity of a TCO film of a copper indium gallium selenide chip comprises the steps of carrying out low-temperature magnetron sputtering on two types of targets of intrinsic zinc oxide and zinc oxide doped with aluminum by 2 weight percent in sequence to form an i-ZnO film and an AL-ZnO film, and is characterized in that the i-ZnO film is obtained by sputtering four cylindrical targets in one cavity, and the AL-ZnO film is obtained by sputtering eight cylindrical targets in two cavities;
the method further comprises the following steps:
the magnetic field intensity of permanent magnets used at the two ends of the third cylindrical target material and the fourth cylindrical target material is improved, so that the magnetic field intensity at the two ends of the third cylindrical target material and the fourth cylindrical target material is higher than that in the middle;
controlling the sputtering power to match with the adjusted magnetic field intensity, so that the film thickness of the i-ZnO film and the film thickness of the AL-ZnO film meet the preset requirement.
2. The method for improving the TCO film thickness uniformity of the CIGS chip as claimed in claim 1, wherein each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group, two long-side edge magnet groups are respectively arranged on the long sides of the middle magnet group, the two long-side edge magnet groups are symmetrical to each other, and 1 short-side edge magnet is respectively arranged on the short-side edge of the middle magnet group;
the middle magnet group comprises 42 first magnets which are sequentially arranged, the N poles of the first magnets are upward, and the long edge magnet group comprises 42 second magnets which are sequentially arranged, and the S poles of the second magnets are upward;
increasing the magnetic field strength of permanent magnets used at both ends of a cylindrical target comprises:
the remanence induction intensity of three first magnets at two ends of the middle magnet group is increased by 2.1-5.7%, and the remanence induction intensity of 4 second magnets at two ends of the long edge magnet group is increased by 2.1-5.7%.
3. The method for improving the TCO film thickness uniformity of the CIGS chip as claimed in claim 2, wherein the magnet grades of the 36 first magnets in the middle of the middle magnet group, the 34 magnets in the middle of the long-side edge magnet group and the magnets on the short-side edge are NdFeB 50M, the remanence of the magnets is 13900Gs,
increasing the magnetic field strength of permanent magnets used at both ends of a cylindrical target comprises:
the magnet marks of three first magnets at two ends of the middle magnet group are changed into NdFeB 52M, the remanence is 14200-14700 Gs, the magnet marks of 4 second magnets at two ends of the long-edge magnet group are changed into NdFeB 52M, and the remanence is 14200-14700 Gs.
4. The coating device is characterized by comprising a first cavity and two second cavities, wherein four intrinsic zinc oxide cylindrical target materials are arranged in the first cavity and used for depositing on a target substrate through low-temperature magnetron sputtering to obtain an i-ZnO film, four aluminum-doped zinc oxide cylindrical target materials are arranged in the second cavity and used for depositing on the target substrate through low-temperature magnetron sputtering to obtain an AL-ZnO film, the magnetic field intensity of permanent magnets used at two ends of a third cylindrical target material and a fourth cylindrical target material in the first cavity and the second cavity is higher than that of permanent magnets at the middle positions, and the magnetic field intensity of the permanent magnets at the middle positions of the third cylindrical target material and the fourth cylindrical target material is the same as that of the permanent magnets on the first cylindrical target material and the second cylindrical target material.
5. The coating device for improving the TCO film thickness uniformity of the CIGS chip as claimed in claim 4, wherein each cylindrical target comprises a cathode magnet structure, the cathode magnet structure comprises a middle magnet group, two long-side edge magnet groups are respectively arranged on the long sides of the middle magnet group, the two long-side edge magnet groups are symmetrical to each other, and 1 short-side edge magnet is respectively arranged on the short-side edge of the middle magnet group;
the middle magnet group comprises 42 first magnets which are sequentially arranged, the N poles of the first magnets are upward, and the long edge magnet group comprises 42 second magnets which are sequentially arranged, and the S poles of the second magnets are upward;
the remanence of each three first magnets at the two ends of the middle magnet group is 2.1-5.7% higher than that of other first magnets, and the remanence of each 4 second magnets at the two ends of the long-edge magnet group is 2.1-5.7% higher than that of other second magnets.
6. The coating device for improving the TCO film thickness uniformity of the CIGS chip as claimed in claim 5, wherein the magnet grades of the 36 first magnets in the middle of the middle magnet group, the 34 magnets in the middle of the long edge magnet group and the short edge side magnets are NdFeB 50M, the magnet remanence induction strength is 13900Gs, the magnet grades of the three first magnets at the two ends of the middle magnet group are NdFeB 52M, the remanence induction strength is 14200-14700 Gs, the magnet grades of the 4 second magnets at the two ends of the long edge magnet group are NdFeB 52M, and the remanence induction strength is 14200-14700 Gs.
7. The coating device for improving the TCO film thickness uniformity of the CIGS chip as claimed in claim 5, wherein the first magnet has a rectangular parallelepiped structure with a dimension of 1 × 0.867 × 0.724 inch, the second magnet has a trapezoidal body structure with an oblique top with a dimension of 1 × 0.815 × 0.362 inch, wherein 0.815 inch is the length of the short side of the trapezoid, the length of the long side of the trapezoid is 0.933 inch, and the magnets on the short side have a rectangular parallelepiped structure with a dimension of 1.466 × 0.750 × 0.408 inch.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210871504.5A CN115287614A (en) | 2022-07-22 | 2022-07-22 | Method for improving TCO film thickness uniformity of CIGS chip and film coating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210871504.5A CN115287614A (en) | 2022-07-22 | 2022-07-22 | Method for improving TCO film thickness uniformity of CIGS chip and film coating device |
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| CN115287614A true CN115287614A (en) | 2022-11-04 |
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| CN202210871504.5A Pending CN115287614A (en) | 2022-07-22 | 2022-07-22 | Method for improving TCO film thickness uniformity of CIGS chip and film coating device |
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| JP2004115841A (en) * | 2002-09-25 | 2004-04-15 | Shin Meiwa Ind Co Ltd | Magnetron sputtering electrode, film deposition system, and film deposition method |
| RU2242821C2 (en) * | 2002-10-17 | 2004-12-20 | Институт сильноточной электроники СО РАН | Magnetron spraying system |
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| CN104878361A (en) * | 2015-06-24 | 2015-09-02 | 安徽纯源镀膜科技有限公司 | Magnetron sputtering coating equipment |
| CN110273131A (en) * | 2019-07-17 | 2019-09-24 | 镇江市德利克真空设备科技有限公司 | A kind of planar cathode for surface coating |
| CN112054072A (en) * | 2020-08-07 | 2020-12-08 | 宣城开盛新能源科技有限公司 | Method and device for continuously preparing transparent conductive film |
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| JPS62142765A (en) * | 1985-12-17 | 1987-06-26 | Rohm Co Ltd | Method for regulating film thickness during magnetron sputtering |
| JP2004115841A (en) * | 2002-09-25 | 2004-04-15 | Shin Meiwa Ind Co Ltd | Magnetron sputtering electrode, film deposition system, and film deposition method |
| RU2242821C2 (en) * | 2002-10-17 | 2004-12-20 | Институт сильноточной электроники СО РАН | Magnetron spraying system |
| CN2818495Y (en) * | 2005-07-06 | 2006-09-20 | 深圳市豪威光电子设备有限公司 | Planar megnetron sputtering device |
| CN104878361A (en) * | 2015-06-24 | 2015-09-02 | 安徽纯源镀膜科技有限公司 | Magnetron sputtering coating equipment |
| CN110273131A (en) * | 2019-07-17 | 2019-09-24 | 镇江市德利克真空设备科技有限公司 | A kind of planar cathode for surface coating |
| CN112054072A (en) * | 2020-08-07 | 2020-12-08 | 宣城开盛新能源科技有限公司 | Method and device for continuously preparing transparent conductive film |
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