KR101441386B1 - Sputtering apparatus - Google Patents

Abstract

The present invention relates to a sputtering apparatus capable of reducing the plasma damage during the sputtering process, suppressing the generation of foreign matter, and minimizing the defects of the thin film, thereby increasing the manufacturing process efficiency.

To this end, the sputtering apparatus of the present invention comprises a vacuumable chamber; First and second targets opposing each other at a predetermined distance in parallel to the first and second sides of the chamber; First and second target plates on which the first and second targets are respectively seated; And a barrier plate made of a V-shaped cross section and provided at the lower portion of the chamber to prevent foreign matter generated by the plasma damage from spreading on the bottom surface of the chamber while reducing plasma damage generated in the sputtering process .

Sputtering, a deposition plate, first to fourth target plates, first and second shutter parts,

Description

[0001] SPUTTERING APPARATUS [0002]

The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus capable of reducing plasma damage during a sputtering process, suppressing the generation of foreign matter, and minimizing defects in a thin film, thereby improving the manufacturing process efficiency.

Description of the Related Art [0002] In recent years, lightweight thin flat panel displays have been mainly used as image display devices used in monitors for personal computers, portable terminals, and various information devices. As such flat panel display devices, a liquid crystal display, a light emitting display, a plasma display panel, a field emission display, and the like are emerging.

1, an organic electroluminescent device includes an organic thin film layer 3 and a first organic thin film layer 3 interposed between the organic thin film layer 3 and the organic thin film layer 3, An electrode 2 and a second electrode 4. Here, any one of the first and second electrodes 2 and 4 may be an anode electrode and the other may be a cathode electrode.

The first electrode 2 may be formed of a material capable of transmitting visible light generated from the organic thin film layer 3 to the outside. At this time, indium tin oxide (ITO) may be used as the first electrode 2. The organic thin film layer 3 includes a hole related layer 3b sequentially stacked on the first electrode 2, a light emitting layer 3a and an electron related layer 3c. Here, the hole-related layer 3b includes a hole injection layer and a hole transport layer, and the electron-related layer 3c includes an electron transport layer and an electron injection layer. The light emitting layer 3a emits light by electrically driving the first electrode 2 and the second electrode 4. The second electrode 4 may be formed of a metal having a high reflectance, for example, gold (Au), aluminum (Al), copper (Cu), silver (Ag)

In addition to the organic electroluminescent device as described above, in the process of manufacturing a flat panel display, a thin film forming process for forming a plurality of thin films on a substrate is performed. At this time, a plurality of thin films such as the electrodes 2 and 4 can be formed by performing a thermal deposition process, a sputtering process, or the like. Particularly, the thermal deposition process has a problem that the material utilization efficiency is low, . Accordingly, in recent years, a thin film forming process using a sputtering apparatus has been performed.

The sputtering apparatus is used for forming various thin films such as a conductive film, a dielectric film, or a semiconductor film. Especially, the magnetron sputtering apparatus can secure a high film forming speed by restricting a high density plasma to the vicinity of a target, The plasma can be stably formed in a state where the amount of the plasma is reduced, and thus it is widely used in the field of thin film forming.

2 is a structural cross-sectional view showing a conventional sputtering apparatus.

The sputtering apparatus shown in Fig. 2 includes a vacuumable chamber 2, a substrate plate 16 for fixing the substrate 17 on the upper surface of the chamber 2, a predetermined distance to one side and the other side of the chamber 2 A pair of targets 15a and 15b facing each other in parallel to each other and a target plate 14 for fixing the targets 15a and 15b on the back surfaces of the targets 15a and 15b; A plurality of magnets 13 for forming a plurality of target plates 14, and an assembly 12 for fixing each of the target plates 14. Here, the targets 15a and 15b may be formed of a material to be deposited on the substrate 17, for example, ITO, copper (Cu), aluminum (Al), molybdenum (Mo)

Ions of argon or the like collide with the targets 15a and 15b at high speed on the plasma generated by the external power source so that the atoms of the targets 15a and 15b protrude to the outside of the substrate 17, .

However, since the above-described conventional sputtering apparatus directly applies plasma damage to the lower surface of the chamber 11 during the sputtering process, foreign matter is generated on the lower surface of the chamber 11. Specifically, plasma damages are applied to the inner wall of the chamber 11 during the sputtering process in a high-voltage vacuum state. In particular, plasma damages are directly applied to the lower surface of the chamber 11 without any additional structure. As a result, foreign matter such as the lower surface of the chamber 11 is generated. In addition, other foreign substances generated by the plasma damages in the chamber 11 are accumulated on the lower surface. Since these foreign substances adversely affect the thin film formed on the substrate 17 during the sputtering process, the efficiency of the sputtering process .

It is an object of the present invention to provide a sputtering apparatus capable of reducing plasma damage during a sputtering process and suppressing generation of foreign matter and minimizing defects in a thin film to thereby increase the manufacturing process efficiency .

According to an aspect of the present invention, there is provided a sputtering apparatus including: a vacuum chamber; First and second targets opposing each other at a predetermined distance in parallel to the first and second sides of the chamber; First and second target plates on which the first and second targets are respectively seated; And a barrier plate made of a V-shaped cross section and provided at the lower portion of the chamber to prevent foreign matter generated by the plasma damage from spreading on the bottom surface of the chamber while reducing plasma damage generated in the sputtering process .

The sputtering apparatus includes third and fourth targets facing each other at a predetermined distance from the third and fourth sides in parallel with each other, third and fourth target plates on which the third and fourth targets are respectively mounted, A plurality of magnets for forming a magnetic field at the back surface of each of the first to fourth target plates, a plurality of assemblies for fixing the first to fourth target plates, ions from the ions generated in the plasma state, 3 target, and a second shutter unit covering the second target or the fourth target from the ions generated in the plasma state.

Wherein the first shutter unit includes a first shutter which is located at a predetermined distance from the front surface of the first target or the third target and blocks the first target or the third target from the ions, A first rotary shaft for positioning the first shutter on the front surface of the first target or the third target by rotating the first shutter on at least one of the third axis and a first shutter driving unit for driving the first rotary shaft .

The first and second targets are made of the same material as any one of ITO, copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Si) Is made of a material different from that of the first and second targets but is made of the same material as any one of ITO, Cu, Al, Mo, and Si. .

The blocking plate is formed to have a size proportional to a space between the first and second target plates, and the upper surface of the blocking plate has one of a circular shape, a rectangular shape, and a polygonal shape. Further, the blocking plate is characterized in that its cross-section is formed in one linear "V" shape or curved "V" shape. Further, the blocking plate is characterized in that a plurality of triangular-shaped protrusions or a plurality of hemispherical protrusions are further formed on the upper surface thereof.

The sputtering apparatus according to the embodiment of the present invention has the following effects.

First, it can reduce the plasma damage, suppress the generation of foreign matter, minimize the defects of the thin film, and increase the manufacturing process efficiency.

Second, depositing a plurality of materials in one chamber can shorten processing time and improve spatial efficiency.

Thirdly, since the number of sputtering apparatuses for performing the sputtering deposition process can be reduced, the manufacturing cost of the flat panel display devices can be reduced.

Hereinafter, a sputtering apparatus and a method of driving the same according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a structural cross-sectional view illustrating a sputtering apparatus according to an embodiment of the present invention. 4 is a perspective view showing the internal structure of the sputtering apparatus shown in FIG.

The sputtering apparatus shown in Figs. 3 and 4 comprises a vacuumable chamber 21; A substrate plate 26 for fixing the substrate 27 on the upper surface of the chamber 21, first and second substrates 26, 27 facing each other at a predetermined distance from the first and second sides in the chamber 21, (25a, 25b); First and second target plates 24a and 24b on which the first and second targets 25a and 25b are respectively mounted; And to prevent the plasma damage generated in the sputtering process and the foreign substances generated by the plasma damage from spreading on the bottom surface of the chamber 21, And a barrier plate (40) formed thereon.

Further, the sputtering apparatus of the present invention includes third and fourth targets 55a and 55b facing each other at a predetermined distance to the third and fourth sides inside the chamber 21 in parallel to each other; Third and fourth target plates 54a, 54b on which the third and fourth targets 55a, 55b are respectively seated; A plurality of magnets (23a, 23b) forming a magnetic field at the back surface of each of the first to fourth target plates (24a, 24b, 54a, 54b); A plurality of assemblies 22 for fixing the first to fourth target plates 24a, 24b, 54a, 54b; A first shutter unit (29, 39, 42) covering the second target (25b) or the third target (55a) from ions generated in the plasma state; And a second shutter unit 28, 38, 41 covering the first target 25a or the fourth target 55b from the ions generated in the plasma state.

Although not shown in the drawings, the sputtering apparatus of the present invention includes a sputter gun for supplying a high-frequency voltage into the chamber 21, a vacuum system for forming the inside of the chamber 21 in a vacuum state, and a plasma, And a plurality of gas injection systems for injecting gases such as argon and oxygen.

The inside of the chamber 21 can be kept at a low vacuum or a high vacuum state by a vacuum system during the sputtering process. The upper surface of the chamber 21 is provided with a closure part 43 to allow the substrate 27 to be moved in and out by an external substrate transfer device (not shown). The driving range of the first shutter portions (29, 39, 42) and the second shutter portions (28, 38, 41) can be widened by the shuttering portion (43).

The substrate plate 26 seats the substrate 27 received from the substrate transport apparatus or allows the sputtered substrate 27 to be delivered through the substrate transport apparatus. The substrate plate 26 may be provided on the upper surface of the chamber 21, for example, on the inner surface of the shut-off section 43, and the substrate plate 26 itself may be inserted / . Although not shown, a plurality of fastening portions are provided on the substrate plate 26 to fix the loaded substrate 27.

The first to fourth target plates 24a, 24b, 54a and 54b are respectively provided on the first to fourth sides in the chamber 21 to seat the first to fourth targets 25a, 25b, 55a, . Specifically, the first and second target plates 25a and 25b are provided so as to face each other at a predetermined distance from the first and second sides in the chamber 21, and the third and fourth target plates 55a and 55b are provided so as to face each other at a predetermined distance from the third and fourth sides inside the chamber 21 in parallel to each other. Each of the first to fourth target plates 24a, 24b, 54a and 54b is fixed to the inner wall or the lower surface of the chamber 21 by a plurality of assemblies 22 provided on the rear surface. Although not shown, each of the first to fourth target plates 24a, 24b, 54a and 54b is provided with a plurality of fastening portions to fix each of the first to fourth targets 25a, 25b, 55a and 55b.

The plurality of assemblies 22 are provided on the rear surfaces of the first to fourth target plates 24a to 24b to form the first to fourth target plates 24a to 24b, And fixed to the inner wall or the lower surface, respectively. The plurality of assemblies 22 may supply heat applied from the outside to the respective targets 25a, 25b, 55a and 55b through the respective target plates 24a, 24b, 54a and 54b, A negative voltage may be supplied to each of the targets 25a, 25b, 55a and 55b.

A plurality of magnets 23a and 23b for forming a magnetic field in the chamber 21 are provided on the back surfaces of the first to fourth target plates 24a, 24b, 54a and 54b. The plurality of magnets 23a and 23b are arranged such that N poles or S poles are alternately directed toward the first to fourth target plates 24a, 24b, 54a and 54b in order to even out the magnetic field distribution. At this time, the plurality of magnets 23a and 23b may be formed integrally with the plurality of assemblies 22 and separately from the plurality of assemblies 22, respectively.

Each of the first to fourth targets 25a, 25b, 55a, 55b is respectively seated on the front surfaces of the first to fourth target plates 24a, 24b, 54a, 54b. The first and second targets 25a and 25b are made of the same material to be deposited on the substrate 27. The first and second targets 25a and 25b are made of indium tin oxide ), Copper (Cu), aluminum (Al), molybdenum (Mo), silver (Si) and the like. The third and fourth targets 55a and 55b are also made of the same material to be deposited on the substrate 27. In this case, materials different from the first and second targets 25a and 25b, for example, ITO, copper (Cu), aluminum (Al), molybdenum (Mo), silver (Si), or the like.

The barrier plate 40 is configured on the lower surface of the chamber 21 to reduce the plasma damage generated in the sputtering process and to prevent the foreign substances generated by the plasma damage from spreading on the bottom surface of the chamber 21. The distance between the first to fourth target plates 24a, 24b, 54a, 54b, that is, the distance between the first to fourth target plates 24a, 24b, 54a, 54b, And can be configured in a proportional size. The upper surface of the discharge plate 40 may be formed in one of circular, rectangular, and polygonal shapes. Also, the blocking plate 40 has a single "V" -shaped cross section, and a plurality of bends or a plurality of protrusions may be formed on the upper surface thereof. The barrier plate 40 will be described later in detail with reference to the accompanying drawings.

The first shutter portions 29, 39, and 42 isolate the second target 25b or the third target 55a from the ions generated in the plasma state in the chamber 21. Specifically, the first shutter portions 29, 39, and 42 are located at a predetermined distance from the front surface of the second target 25b or the third target 55a, and the second target 25b and the second target 25b are separated from the ions in the plasma state, The first shutter 42 and the first shutter 42 for blocking the third target 55a are rotated in the horizontal direction (arrow B) with respect to the lower surface of the chamber 21, A first rotary shaft 39 for positioning the second target 25b or the third target 55a on the front side of the target 25b or the third target 55a and a first shutter driving unit 29 for driving the first rotary shaft 39. [

The second shutter portions 28, 38, and 41 isolate the first target 25a or the fourth target 55b from the ions generated in the plasma state in the chamber 21. Specifically, the second shutter portions 28, 38, and 41 are positioned at a predetermined interval on the entire surface of the first target 25a or the fourth target 55b, and the first target 25a or the second target 25a, The second shutter 41 and the second shutter 41 blocking the fourth target 55b are rotated in the horizontal direction (arrow B) on the lower surface of the chamber 21, And a second shutter driving part 28 for driving the second rotary shaft 38. The second rotary shaft 38 is disposed on the front surface of the target 25a or the fourth target 55b.

4, when the first shutter 42 covers the second target 25b and the second shutter 41 covers the first target 25a, the sputtering process is performed The third and fourth targets 55a, 55b material is deposited on the substrate 27.

Specifically, when the first shutter 42 covers the second target 25b and the second shutter 41 covers the first target 25a, the inside of the chamber 21 is maintained in a vacuum state by a vacuum system do. Then, argon gas is injected into the chamber 21 by a gas injection system. Thereafter, the injected argon gas is converted into an argon gas plasma by causing gas discharge by the high-frequency voltage applied to the sputter gun. At this time, in the space between the third and fourth targets 55a and 55b, a magnetic field is formed by the magnets provided on the back surfaces of the third and fourth targets 55a and 55b. As described above, the argon gas plasma generated by the gas discharge moves toward the third and fourth targets 55a and 55b along the path of the magnetic field formed inside the chamber 21, so that the third and fourth targets 55a and 55b, Lt; / RTI > The deposition material is discharged from the surfaces of the third and fourth targets 55a and 55b and this deposition material is deposited on the surface of the substrate 27 located on the upper surface of the chamber 21, To form a thin film.

FIG. 5 is a diagram illustrating a movement path of the first and second shutters shown in FIG. 4;

4 and 5, each of the first and second shutters 42 and 41 rotates in the horizontal direction (arrow B) on the lower surface of the chamber 21 to form the third and fourth targets 55a, 55b, respectively. When the first and second shutters 42 and 41 are disposed on the front surfaces of the third and fourth targets 55a and 55b, the sputtering process using the first and second targets 25a and 25b can be performed have.

In other words, when the first shutter 42 covers the third target 55a and the second shutter 41 covers the fourth target 55b, the inside of the chamber 21 is evacuated by the vacuum system . Then, argon gas is injected into the chamber 21 by a gas injection system. Thereafter, the injected argon gas is converted into an argon gas plasma by causing gas discharge by the high-frequency voltage applied to the sputter gun. At this time, in the space between the first and second targets 25a and 25b in the chamber 21, a magnetic field is generated by the magnets 23a and 23b provided on the back surfaces of the first and second targets 25a and 25b . As described above, the argon gas plasma generated by the gas discharge moves toward the first and second targets 25a and 25b along the path of the magnetic field formed inside the chamber 21, so that the first and second targets 25a and 25b Lt; / RTI > This causes the deposition material to be discharged from the surfaces of the first and second targets 25a and 25b and this deposition material is deposited on the surface of the substrate 27 located on the upper surface of the chamber 21, To form a thin film.

5, when the first and second shutters 42 and 41 are disposed on the front surfaces of the third and fourth targets 55a and 55b, B, the first and second shutters 42 and 41 are disposed on the entire surfaces of the first and second targets 25a and 25b as shown in FIG. Here, the first and second shutters 42 and 41 can rotate simultaneously according to the area of the chamber 21, that is, the space inside the chamber 21, and the first and second shutters 42 and 41 ).

As described above, the sputtering apparatus according to the present invention includes the first and second targets 25a and 25b, which are parallel to and opposed to each other at a predetermined distance from the first to fourth sides, And third and fourth targets 55a and 55b. A first shutter 39 covering the second target 25b or the third target 55a from the ions generated in the plasma state; And a second shutter 41 covering the first target 25a or the fourth target 55b from the ions generated in the plasma state. Due to such a configuration and driving method, the present invention can deposit a plurality of materials in one chamber 21, thereby shortening the processing time and improving spatial efficiency. In addition, since the number of sputtering apparatuses for performing the sputtering deposition process can be reduced, manufacturing costs of flat panel display devices can be reduced.

As described above, the sputtering apparatus according to the present invention can deposit a plurality of materials in one chamber 21, thereby shortening the processing time and improving spatial efficiency. However, since a larger number of sputtering processes are performed in one chamber 21, the above components constituting the inside of the chamber 21 or the inner wall surface of the chamber 21, particularly, the plasma damage Will be bigger.

FIGS. 6A and 6B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to the first embodiment of the present invention.

6A and 6B, the upper surface of the blocking plate 40 is formed in a single circular shape, and its cross-section is formed into a single linear "V" shape. At this time, the upper surface area of the blocking plate 40 is proportional to the space between the first to fourth target plates 24a, 24b, 54a, 54b. 6A and 6B, the upper surface of the blocking plate 40 is formed in a circular shape. However, the upper surface of the blocking plate 40 may have one of a rectangular shape and a polygonal shape. Here, a plurality of fixing portions 40a for fixing the blocking plate 40 to the lower surface of the chamber 21 may be further provided under the blocking plate 40. As described above, the barrier plate 40 having a straight V-shaped cross section has the plasma damage applied to the upper surface of the barrier plate 40 being deflected at a predetermined angle having a straight "V" The influence of the damage can be reduced. In addition, since the foreign objects generated by the plasma damage collect in the central portion of the "V" shape, foreign objects can be prevented from being scattered to the lower surface of the chamber 21. [ 6A and 6B can reduce plasma damage to suppress foreign matter generation and also reduce the influence of foreign objects on the thin film formed on the substrate 27. [

FIGS. 7A and 7B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to the second embodiment of the present invention.

7A and 7B, the upper surface of the blocking plate 50 is formed as a single circle, and its cross section is formed in a curved "V" shape. At this time, the upper surface area of the blocking plate 50 is proportional to the space between the first to fourth target plates 24a, 24b, 54a, 54b. 7A and 7B, the upper surface of the blocking plate 50 is formed in a circular shape. However, the upper surface of the blocking plate 50 may have one of a rectangular shape and a polygonal shape. Here, a plurality of fixing portions 50a for fixing the blocking plate 50 to the lower surface of the chamber 21 may be further provided on the lower portion of the blocking plate 50. As described above, the barrier plate 50 having a curved V-shape in section has the plasma damage applied to the upper surface of the barrier plate 50 at a predetermined angle with a curved "V" shape The effect of damage can be reduced. In addition, since the foreign objects generated by the plasma damage collect in the central portion of the "V" shape, foreign objects can be prevented from being scattered to the lower surface of the chamber 21. [ 7A and 7B can reduce plasma damage to suppress foreign matter generation and also reduce the influence of foreign objects on the thin film formed on the substrate 27. [

FIGS. 8A and 8B are a perspective view and a cross-sectional view illustrating the barrier plate of FIG. 3 according to the third embodiment of the present invention.

8A and 8B, the upper surface of the discharge plate 60 is formed in a single circular shape, and its cross-section is formed into a single linear "V" shape. Further, a plurality of hemispherical protrusions 60b are further provided on the upper surface of the anti-reflection plate 60. The plurality of hemispherical protrusions 60b may be regularly arranged on the groove formed in the "V" shape at regular intervals and irregularly formed. In addition, the plurality of semispherical projections 60b may be formed on the upper surface of the blocking plate 50 having a curved "V" shaped cross section. The upper surface area of the anti-reflection plate 60 has a size proportional to the space between the first to fourth target plates 24a, 24b, 54a, 54b. 8A and 8B, the upper surface of the deposition plate 60 is formed in a circular shape, but the upper surface of the deposition plate 60 may be formed in one of a square shape and a polygonal shape. Here, a plurality of fixing portions 60a for fixing the blocking plate 60 to the lower surface of the chamber 21 may be further provided at a lower portion of the blocking plate 60. As described above, the blocking plate 60, whose cross section is a linear V-shape and has a plurality of hemispherical protrusions 60b formed on its upper surface, is damaged by the plasma damage applied to the upper surface of the blocking plate 60 The influence of the damage can be reduced since it is offset by a predetermined angle of the linear "V" shape and the hemispherical protrusion 60b. In addition, since foreign matter generated by the plasma damage collects between the central portion of the "V" shape and the hemispherical protrusion 60b, it is possible to prevent foreign objects from being scattered to the lower surface of the chamber 21. [ 8A and 8B can reduce plasma damage to suppress foreign matter generation and also reduce the influence of foreign objects on the thin film formed on the substrate 27. [

FIGS. 9A and 9B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to the fourth embodiment of the present invention.

9A and 9B, the upper surface of the blocking plate 70 is formed in a single circular shape, and its cross-section is formed in a single linear "V" shape. Further, a plurality of protrusions 70b in the form of a triangular shape is further provided on the upper surface of the anti-reflection plate 60. Such a plurality of triangular-shaped protrusions 70b may be regularly arranged on the groove formed in the "V" shape, regularly spaced without intervals, and irregularly formed. In addition, a plurality of triangular-shaped protrusions 70b may be formed on the upper surface of the blocking plate 50 having a curved "V" -shaped cross section. The upper surface area of the antifouling plate 70 has a size proportional to the space between the first to fourth target plates 24a, 24b, 54a, 54b. 9A and 9B, the upper surface of the blocking plate 70 is formed in a circular shape. However, the upper surface of the blocking plate 70 may have one of a rectangular shape and a polygonal shape. Here, a plurality of fixing portions 70a for fixing the blocking plate 70 to the lower surface of the chamber 21 may be further provided at the lower portion of the blocking plate 70. As described above, the blocking plate 70 having a cross section of a straight V-shape and having a plurality of triangular-shaped protrusions 60b on the upper surface thereof is used as the plasma damper 70 applied to the upper surface of the blocking plate 70, Is deformed at a predetermined angle of the linear V-shaped and triangular-shaped protrusions 60b, so that the influence of the damage can be reduced. In addition, since foreign matter generated by the plasma damage collects between the central portion of the "V" shape and the protruding portion 60b of the triangular shape, it is possible to prevent foreign objects from being scattered to the lower surface of the chamber 21. [ 9A and 9B can reduce the plasma damage to suppress foreign matter generation and also reduce the influence of foreign matter on the thin film formed on the substrate 27. [

As described above, the sputtering apparatus according to the present invention can deposit a plurality of materials in one chamber 21, thereby shortening the processing time and improving spatial efficiency. In addition, since the number of sputtering apparatuses for performing the sputtering deposition process can be reduced, manufacturing cost of the flat panel display devices can be reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

1 is a structural cross-sectional view illustrating an organic electroluminescent device.

2 is a structural cross-sectional view showing a conventional sputtering apparatus;

3 is a structural cross-sectional view of a sputtering apparatus according to an embodiment of the present invention.

FIG. 4 is a perspective view showing the internal structure of the sputtering apparatus shown in FIG. 3; FIG.

FIG. 5 is a view for explaining a movement path of the first and second shutters shown in FIG. 4; FIG.

FIGS. 6A and 6B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to the first embodiment of the present invention;

FIGS. 7A and 7B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to the second embodiment of the present invention;

FIGS. 8A and 8B are a perspective view and a cross-sectional view, respectively, of the barrier plate of FIG. 3 according to the third embodiment of the present invention;

9A and 9B are a perspective view and a cross-sectional view, respectively, of the deposition plate of FIG. 3 according to the fourth embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

21: chamber 26: substrate plate

29, 39, 42: first shutter parts 28, 38, 41:

25a, 25b, 55a, 55b: first to fourth targets

24a, 24b, 54a, 54b: first to fourth target plates

Claims (8)

A vacuumable chamber; First and second targets opposing each other at a predetermined distance in parallel to the first and second sides of the chamber; First and second target plates on which the first and second targets are respectively seated; And And a barrier plate formed in a lower portion of the chamber to have a "V" shape in order to reduce plasma damage generated during the sputtering process and to prevent foreign substances generated by plasma damage from spreading on the bottom surface of the chamber , The anti- And a fixing portion for fixing the blocking plate to the lower surface of the chamber is further provided at a lower portion of the blocking plate so as to be separated from the chamber by a size proportional to a space between the first and second target plates Wherein the sputtering apparatus comprises: The method according to claim 1, The sputtering apparatus Third and fourth targets facing each other at a predetermined distance in parallel to the third and fourth sides of the chamber, Third and fourth target plates on which the third and fourth targets are respectively seated, A plurality of magnets for forming a magnetic field at the back surface of each of the first to fourth target plates, A plurality of assemblies for fixing the first to fourth target plates, A first shutter unit covering the first target or the third target from ions generated in the plasma state, and And a second shutter unit covering the second target or the fourth target from the ions generated in the plasma state. 3. The method of claim 2, The first shutter portion A first shutter for blocking the first target or the third target from the ions at a predetermined interval on the entire surface of the first target or the third target, A first rotation shaft for rotating the first shutter so that the first shutter is positioned on the front surface of the first target or the third target, And a first shutter driving unit for driving the first rotation axis. 3. The method of claim 2, The second shutter portion A second shutter for blocking the second target or the fourth target from the ions positioned at a predetermined interval on the entire surface of the second target or the fourth target, A second rotation shaft for rotationally moving the second shutter so that the second shutter is positioned on the front surface of the second target or the fourth target, And a second shutter driving part for driving the second rotation axis. 5. The method of claim 4, The first and second targets (Al), molybdenum (Mo), and silver (Si). The third and fourth targets are made of a different material from the first and second targets but are made of the same material as any one of ITO, Cu, Al, Mo, and Si. Of the sputtering apparatus. The method according to claim 1, The anti- Wherein the upper surface is formed in one of a circular shape, a rectangular shape, and a polygonal shape. The method according to claim 6, The anti- Wherein the cross section is formed in one linear "V" shape or a curved "V" shape. 8. The method of claim 7, The anti- And a plurality of triangular-shaped protrusions or a plurality of hemispherical protrusions are further formed on the upper surface of the sputtering apparatus.

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