KR20090069804A - Sputtering apparatus - Google Patents

Abstract

A sputtering apparatus is provided to reduce a manufacturing time and improve the efficiency of the apparatus by depositing a plural material on a signal chamber. A substrate plate(26) is fixed on the top of a vacuumable chamber, a first and a second target(25a, 25b) are faced with each other by a certain distance from a first and a second side. A first and the second target are settled on the first and second target plates(24a,24b). An adhesion prevention plate(40) is installed at the lower part of the chamber to reduce plasma damage and prevent diffusion of foreign material due to plasma damage to the bottom of the chamber.

Description

Sputtering Device {SPUTTERING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus capable of reducing plasma damage during a sputtering process to suppress generation of foreign substances and minimizing defects of a thin film to increase manufacturing process efficiency.

Background Art In recent years, lightweight thin flat panel displays have been mainly used as video display devices used for personal computers, portable terminals, monitors of various information apparatuses, and the like. Such flat panel displays include liquid crystal displays, light emitting displays, plasma display panels, field emission displays, and the like.

Among them, an organic electroluminescent device is mainly used as a light emitting display device. As shown in FIG. 1, an organic electroluminescent device is a first organic light emitting layer 3 and an organic thin film layer 3 interposed therebetween. An electrode 2 and a second electrode 4. Here, one of the first and second electrodes 2 and 4 may be an anode electrode and the other may be a cathode electrode.

The first electrode 2 may be formed of a material capable of transmitting visible light generated from the organic thin film layer 3 to the outside. In this case, indium tin oxide (ITO) may be used as the first electrode 2. The organic thin film layer 3 includes a hole related layer 3b, a light emitting layer 3a, and an electron related layer 3c sequentially stacked on the first electrode 2. Here, the hole related layer 3b includes a hole injection layer and a hole transport layer, and the electron related layer 3c includes an electron transport layer and an electron injection layer. The light emitting layer 3a emits light by electric driving of the first electrode 2 and the second electrode 4. The second electrode 4 may be formed of a metal material having high reflectance, for example, gold (Au), aluminum (Al), copper (Cu), silver (Ag), or an alloy thereof.

In addition to the organic EL device described above, in the manufacturing process of the flat panel display device, a thin film forming process of forming a plurality of thin films on the substrate is performed. In this case, a plurality of thin films such as the electrodes 2 and 4 may be formed by performing a thermal evaporation process or a sputtering process. In particular, the thermal evaporation process may have a problem such as low material utilization efficiency and uneven thickness. There is. Accordingly, recently, a thin film forming process using a sputtering apparatus has been performed.

Sputtering apparatuses are used to form various thin films such as conductive films, dielectric films, or semiconductor films. In particular, magnetron sputtering apparatuses can secure high film-forming speeds by confining high-density plasma near a target and incorporation of impurities under high vacuum. It is widely used in the field of thin film molding because it can form a stable plasma in a low state.

2 is a configuration sectional view showing a sputtering apparatus according to the prior art.

The sputtering apparatus shown in FIG. 2 has a predetermined distance between the vacuumable chamber 2, the substrate plate 16 for fixing the substrate 17 at the upper surface of the chamber 2, one side and the other side inside the chamber 2. A magnetic field at the rear of the target plate 14 and the target plate 14 for fixing the targets 15a and 15b on the back of each target 15a and 15b A plurality of magnets 13 for forming a plurality of magnets, and an assembly 12 for fixing each target plate 14. The targets 15a and 15b may be materials to be deposited on the substrate 17, for example, ITO, copper (Cu), aluminum (Al), molybdenum (Mo), or the like.

In the sputtering apparatus configured as described above, ions such as argon collide with the targets 15a and 15b having a negative charge at high speed on the plasma generated by an external power source, so that atoms of the targets 15a and 15b protrude outwards to the substrate 17. To be deposited on.

However, the conventional sputtering apparatus described above has a problem in that foreign substances are generated on the lower surface of the chamber 11 because the plasma damage is directly applied to the lower surface of the chamber 11 during the sputtering process. Specifically, plasma damage is applied to the inner wall of the chamber 11 during the sputtering process under a high voltage vacuum. In particular, plasma damage is directly applied to the lower surface of the chamber 11 without a separate structure. As a result, foreign substances such as a lower surface of the chamber 11 are generated. In addition, other foreign matters generated by plasma damages inside the chamber 11 also accumulate on the lower surface, and since such foreign matters adversely affect the thin film formed on the substrate 17 during the sputtering process, the efficiency of the sputtering process Will lower.

An object of the present invention is to provide a sputtering apparatus for reducing the plasma damage during the sputtering process to suppress the generation of foreign matters and to minimize the defect of the thin film to increase the manufacturing process efficiency. .

Sputtering apparatus according to an embodiment of the present invention for achieving the above object is a vacuum capable chamber; First and second targets facing each other in parallel with a predetermined distance on first and second sides inside the chamber; First and second target plates on which the first and second targets are respectively seated; And, to reduce the plasma damage generated during the sputtering process and to prevent foreign substances caused by the plasma damage to the bottom surface of the chamber to prevent the spreading plate formed in the "V" shaped cross section at the bottom of the chamber Characterized in that provided.

The sputtering apparatus includes third and fourth targets facing each other in parallel to each other at a predetermined distance on the third and fourth sides inside the chamber, and third and fourth target plates on which the third and fourth targets are seated, respectively. A plurality of magnets for forming a magnetic field on the rear surface of each of the first to fourth target plates, a plurality of assemblies for fixing the first to fourth target plates, and the first target or the first from the ions generated in the plasma state. And a second shutter unit covering the third target, and a second shutter unit covering the second target or the fourth target from ions generated in the plasma state.

The first shutter unit may be disposed in front of the first target or the third target at a predetermined interval to block the first target or the third target from the ions, and the first shutter may include the first shutter. A first rotational axis for positioning the first shutter in front of the first target or the third target by rotationally moving to at least one of the third axes, and a first shutter driver for driving the first rotational axis; It is characterized by.

The first and second targets are made of the same material as any one of materials such as ITO, copper (Cu), aluminum (Al), molybdenum (Mo), silver (Si), and the third and fourth targets. Is made of a material different from the first and second targets, but is made of the same material as any one of materials such as ITO, copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Si). It is done.

The anti-stick plate is formed in a size proportional to the space between the first and the second target plate, the upper surface is characterized in that formed of any one of a circle, a square, and a polygon. In addition, the anti-corrosion plate is characterized in that the cross section is formed in one straight "V" shape or curved "V" shape. In addition, the anti-stick plate is characterized in that a plurality of triangular-shaped protrusions or a plurality of hemispherical protrusions is further formed on the upper surface.

Sputtering apparatus according to an embodiment of the present invention having the above characteristics has the following effects.

First, it is possible to reduce the plasma damage to suppress the generation of foreign matters and to minimize the defects of the thin film to increase the manufacturing process efficiency.

Second, by depositing a plurality of materials in one chamber, it is possible to shorten the process time and improve spatial equipment efficiency.

Third, since the number of sputtering apparatuses for performing the sputtering deposition process can be reduced, manufacturing costs of flat panel display devices can be reduced.

Hereinafter, a sputtering apparatus and a driving method thereof according to an embodiment of the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating a sputtering apparatus according to an embodiment of the present invention. 4 is a perspective view showing the internal structure of the sputtering apparatus shown in FIG. 3.

The sputtering apparatus shown in FIGS. 3 and 4 includes a vacuum chamber 21; A substrate plate 26 for fixing the substrate 27 on the upper surface of the chamber 21, first and second targets facing in parallel with each other at a predetermined distance on the first and second sides inside the chamber 21; (25a, 25b); First and second target plates 24a and 24b on which the first and second targets 25a and 25b are seated, respectively; And in order to reduce the plasma damage generated during the sputtering process and to prevent foreign matters generated by the plasma damage to the bottom surface of the chamber 21 is provided in the lower portion of the chamber 21 in the cross section "V" shape It is provided with the adhesion plate 40 which consisted of.

In addition, the sputtering apparatus of the present invention includes: third and fourth targets 55a and 55b facing each other in parallel with a predetermined distance on the third and fourth sides inside the chamber 21; Third and fourth target plates 54a and 54b on which the third and fourth targets 55a and 55b are seated, respectively; A plurality of magnets (23a, 23b) for forming a magnetic field on the back surface of each of the first to fourth target plates (24a, 24b, 54a, 54b); A plurality of assemblies 22 securing the first to fourth target plates 24a, 24b, 54a, 54b; First shutter portions 29, 39, 42 covering the second target 25b or the third target 55a from ions generated in the plasma state; And second shutter portions 28, 38, and 41 covering the first target 25a or the fourth target 55b from ions generated in the plasma state.

In addition, although not shown in the drawings, the sputtering apparatus of the present invention includes a sputter gun for supplying a high frequency voltage inside the chamber 21, a vacuum system for forming the inside of the chamber 21 in a vacuum state, and a plasma in the chamber 21. And a plurality of gas injection systems for injecting gases such as argon and oxygen.

The interior of the chamber 21 may maintain a low or high vacuum state by a vacuum gauge during the sputtering process. In addition, the upper surface of the chamber 21 is formed with a closing portion 43 is possible to enter / leave the substrate 27 by an external substrate transport device (not shown). The driving range of the first shutter unit 29, 39, 42 and the second shutter unit 28, 38, 41 may be widened by the closing unit 43.

The substrate plate 26 seats the substrate 27 received from the substrate transportation device, or allows the substrate 27 after the sputtering process is finished to be shipped through the substrate transportation device. Such a substrate plate 26 may be provided on an upper surface of the chamber 21, for example, an inner surface of the cuff 43, and the substrate plate 26 itself may enter / exit together with the substrate 27. May be Although not shown, the substrate plate 26 is provided with a plurality of fastening portions to fix the received substrate 27.

The first to fourth target plates 24a, 24b, 54a, and 54b are provided on the first to fourth sides of the chamber 21, respectively, to seat the first to fourth targets 25a, 25b, 55a, and 55b, respectively. Let's do it. Specifically, the first and second target plates 25a and 25b are provided to face each other in parallel to each other at a predetermined distance on the first and second sides of the chamber 21, and the third and fourth target plates ( 55a and 55b are provided to face each other in parallel with each other at a predetermined distance on the third and fourth sides inside the chamber 21. Each of the first to fourth target plates 24a, 24b, 54a, and 54b is fixed to the inner wall or the lower surface of the chamber 21 by a plurality of assemblies 22 provided on the rear surface thereof. In addition, although not shown, each of the first to fourth target plates 24a, 24b, 54a, and 54b is provided with a plurality of fastening portions to fix each of the first to fourth targets 25a, 25b, 55a, and 55b.

The plurality of assemblies 22 are provided on the rear surfaces of the first to fourth target plates 24a, 24b, 54a, and 54b, respectively, and the first to fourth target plates 24a, 24b, 54a, and 54b may be disposed in the chamber 21. Fix to the inner wall or the bottom surface respectively. The plurality of assemblies 22 may supply heat applied from the outside to the respective targets 25a, 25b, 55a, and 55b through the target plates 24a, 24b, 54a, and 54b. A negative voltage is also supplied to each target 25a, 25b, 55a, 55b.

A plurality of magnets 23a and 23b for forming a magnetic field inside the chamber 21 are provided on the rear surfaces of the first to fourth target plates 24a, 24b, 54a and 54b. The plurality of magnets 23a and 23b are arranged such that the N pole or the S pole alternately faces the first to fourth target plates 24a, 24b, 54a and 54b in order to evenly distribute the magnetic field. In this case, the plurality of magnets 23a and 23b may be integrally formed with the plurality of assemblies 22 or may be formed to be separated from the plurality of assemblies 22, respectively.

Each of the first to fourth targets 25a, 25b, 55a, and 55b is mounted on the front surface of the first to fourth target plates 24a, 24b, 54a, and 54b, respectively. Here, the first and second targets 25a and 25b are made of the same material to be deposited on the substrate 27, where the first and second targets 25a and 25b are indium-tin oxide (ITO). ), Copper (Cu), aluminum (Al), molybdenum (Mo), silver (Si) and the like may be made of any one material. In addition, the third and fourth targets 55a and 55b may also be made of the same material to be deposited on the substrate 27, wherein the materials different from the first and second targets 25a and 25b, for example, ITO and copper (Cu), aluminum (Al), molybdenum (Mo), it may be made of any one material such as silver (Si).

The adhesion plate 40 is configured on the lower surface of the chamber 21 to reduce the plasma damage generated during the sputtering process, and to prevent foreign matters generated by the plasma damage from spreading to the bottom surface of the chamber 21. The anti-stick plate 40 is a distance between the first to fourth target plates 24a, 24b, 54a and 54b, that is, the space between the first to fourth target plates 24a, 24b, 54a and 54b. It can be configured in proportion. In addition, the barrier plate 40 may have an upper surface of any one of a circle, a rectangle, and a polygon. In addition, the anti-blocking plate 40 is made of a single "V" shape in the cross-section and a plurality of bends or a plurality of protrusions are formed on the upper surface. This, the anti-fouling plate 40 will be described in more detail with reference to the accompanying drawings after.

The first shutter portions 29, 39, 42 isolate the second target 25b or the third target 55a from ions generated in the plasma state in the chamber 21. In detail, the first shutter units 29, 39, and 42 are positioned at the front surface of the second target 25b or the third target 55a at predetermined intervals to prevent the second target 25b from the ions in the plasma state. Alternatively, the first shutter 42 and the first shutter 42 which block the third target 55a are rotated in a direction (arrow B) horizontal to the lower surface of the chamber 21 to release the first shutter 42. A first rotating shaft 39 positioned in front of the second target 25b or the third target 55a, and a first shutter driver 29 driving the first rotating shaft 39 are provided.

The second shutter portions 28, 38, and 41 isolate the first target 25a or the fourth target 55b from ions generated in the plasma state in the chamber 21. In detail, the second shutter portions 28, 38, and 41 are positioned at a predetermined distance on the front surface of the first target 25a or the fourth target 55b to form the first target 25a or the above-described ions. By rotating the second shutter 41 and the second shutter 41 which block the fourth target 55b in a direction horizontal to the lower surface of the chamber 21 (arrow B), the second shutter 41 is rotated. A second rotating shaft 38 positioned in front of the target 25a or the fourth target 55b, and a second shutter driver 28 for driving the second rotating shaft 38 are provided.

As shown in FIG. 4, when the first shutter 42 covers the second target 25b and the second shutter 41 covers the first target 25a, the sputtering process is performed. Third and fourth targets 55a and 55b materials are deposited on the substrate 27.

Specifically, when the first shutter 42 covers the second target 25b and the second shutter 41 covers the first target 25a, the interior of the chamber 21 is maintained in a vacuum state by a vacuum gauge. do. Then, argon gas is injected into the chamber 21 by a gas injection system. Thereafter, the injected argon gas is converted into an argon gas plasma by causing a gas discharge by a high frequency voltage applied to the sputter gun. At this time, a magnetic field is formed in the chamber 21, that is, the space between the third and fourth targets 55a and 55b by magnets provided on the rear surfaces of the third and fourth targets 55a and 55b. As described above, the argon gas plasma generated by the gas discharge moves toward the third and fourth targets 55a and 55b along the path of the magnetic field formed in the chamber 21, thereby causing the third and fourth targets 55a and 55b to move. Physically collide with the surface of the. As a result, the deposition material is released from the surfaces of the third and fourth targets 55a and 55b, and the deposition material is deposited on the surface of the substrate 27 located on the upper surface of the chamber 21, and thus on the substrate 27. Form a thin film.

FIG. 5 is a diagram illustrating a moving path of the first and second shutters illustrated in FIG. 4.

4 and 5, each of the first and second shutters 42 and 41 is rotated in a direction (arrow B) horizontal to the lower surface of the chamber 21 so that the third and fourth targets 55a, 55b) may be placed on each front. As such, when the first and second shutters 42 and 41 are disposed in front of the third and fourth targets 55a and 55b, a sputtering process using the first and second targets 25a and 25b may be performed. have.

In other words, when the first shutter 42 covers the third target 55a and the second shutter 41 covers the fourth target 55b, the interior of the chamber 21 is vacuumed by a vacuum gauge. Keep it. Then, argon gas is injected into the chamber 21 by a gas injection system. Thereafter, the injected argon gas is converted into an argon gas plasma by causing a gas discharge by a high frequency voltage applied to the sputter gun. At this time, the magnetic field is generated by the magnets 23a and 23b provided on the rear surfaces of the first and second targets 25a and 25b in the chamber 21, that is, between the first and second targets 25a and 25b. Is formed. As such, the argon gas plasma generated by the gas discharge is moved toward the first and second targets 25a and 25b along the path of the magnetic field formed inside the chamber 21, thereby allowing the first and second targets 25a and 25b to operate. Physically collide with the surface of the. As a result, the deposition material is released from the surfaces of the first and second targets 25a and 25b, and the deposition material is deposited on the surface of the substrate 27 located on the upper surface of the chamber 21, and thus on the substrate 27. Form a thin film.

Subsequently, as shown in FIG. 5, the first and second shutters 42 and 41 are disposed in front of the third and fourth targets 55a and 55b in a horizontal direction on the lower surface of the chamber 21 (arrows). In reverse rotation to B), the first and second shutters 42 and 41 are disposed in front of the first and second targets 25a and 25b as shown in FIG. 4 again. Here, the first and second shutters 42 and 41 may rotate at the same time according to the space inside the chamber 21, that is, the width of the chamber 21, and the first and second shutters 42 and 41 may be rotated simultaneously. Can be rotated sequentially.

As described above, the sputtering apparatus according to the present invention faces the first and second targets 25a and 25b facing each other in parallel with each other at a predetermined distance on the first to fourth sides, and faces each other in parallel with each other at a predetermined distance. And third and fourth targets 55a and 55b. A first shutter 39 covering the second target 25b or the third target 55a from ions generated in the plasma state; And a second shutter 41 covering the first target 25a or the fourth target 55b from ions generated in the plasma state. Due to the configuration and the driving method as described above, the present invention allows the deposition of a plurality of materials in one chamber 21, thereby shortening the process time and improving spatial equipment efficiency. In addition, since the number of sputtering devices for performing the sputtering deposition process can be reduced, manufacturing costs of flat panel display devices can be reduced.

As described above, the sputtering apparatus according to the present invention can shorten the process time and improve spatial equipment efficiency by allowing a plurality of materials to be deposited in one chamber 21. However, since more sputtering processes are performed in one chamber 21, the plasma damage applied to the above-mentioned components configured inside the chamber 21 or the inner wall surface of the chamber 21, in particular, the deposition plate 40, is applied. Is bound to get bigger.

6A and 6B are a perspective view and a cross-sectional view of the anti-stick plate of FIG. 3 according to the first embodiment of the present invention.

6A and 6B has a top plate of one circular shape and a cross section of one of the straight "V" shapes. At this time, the upper area of the anti-stick plate 40 has a size proportional to the space between the first to fourth target plate (24a, 24b, 54a, 54b). 6A and 6B, the upper surface of the anti-glare plate 40 is formed in a circular shape, but the anti-glare plate 40 may be formed in one of a quadrangle or a polygon. Here, a plurality of fixing parts 40a for fixing the anti-glare plate 40 to the lower surface of the chamber 21 may be further provided below the anti-glare plate 40. As described above, since the cross-section is formed in a straight "V" shape, the anti-deposition plate 40 receives the plasma damage applied to the upper surface of the anti-deposition plate 40 at a predetermined angle having the straight "V" shape. Reduce the effects of damage. In addition, since foreign matters generated by plasma damage gather at the center portion of the “V” shape, the foreign matters may be prevented from being scattered to the lower surface of the chamber 21. As a result, the adhesion plate 40 illustrated in FIGS. 6A and 6B may reduce plasma damage to suppress foreign matter generation, and may also reduce the influence of foreign matters on the thin film formed on the substrate 27.

7A and 7B are a perspective view and a cross-sectional view of the anti-stick plate of FIG. 3 according to the second embodiment of the present invention.

7A and 7B has a top plate of one circular shape and a cross section of one of the curved “V” shapes. At this time, the upper area of the anti-stick plate 50 has a size proportional to the space between the first to fourth target plate (24a, 24b, 54a, 54b). 7A and 7B, the upper surface of the anti-fouling plate 50 is formed in a circular shape, but the anti-fouling plate 50 may be formed in one of a quadrangle or a polygon. Here, a plurality of fixing parts 50a may be further provided below the adhesion plate 50 to fix the adhesion plate 50 to the bottom surface of the chamber 21. As described above, the anti-corrosion plate 50 having a curved “V” cross section has a plasma angle applied to the upper surface of the anti-corrosion plate 50 at a predetermined angle of the curved “V” form. It can reduce the effects of damage. In addition, since foreign matters generated by plasma damage gather at the center portion of the “V” shape, the foreign matters may be prevented from being scattered to the lower surface of the chamber 21. As a result, the adhesion plate 50 illustrated in FIGS. 7A and 7B may reduce plasma damage to suppress foreign matter generation, and may also reduce the influence of foreign matters on the thin film formed on the substrate 27.

8A and 8B are a perspective view and a cross-sectional view of the anti-stick plate of FIG. 3 according to the third embodiment of the present invention.

8A and 8B has a top plate of one circular shape and a cross section of one of the straight "V" shapes. In addition, a plurality of hemispherical protrusions 60b are further provided on the upper surface of the anti-stick plate 60. Such a plurality of hemispherical protrusions 60b may be regularly arranged at predetermined intervals on a groove formed in a “V” shape or may be irregularly formed. In addition, the plurality of hemispherical protrusions 60b may be formed on the upper surface of the anti-stick plate 50 having a curved “V” shaped cross section. The upper area of the anti-stick plate 60 has a size proportional to the space between the first to fourth target plates 24a, 24b, 54a, 54b. 8A and 8B, the upper surface of the barrier plate 60 is formed in a circular shape, but the upper plate of the barrier plate 60 may be formed in one of a rectangle or a polygon. Here, a plurality of fixing parts 60a for fixing the anti-glare plate 60 to the lower surface of the chamber 21 may be further provided below the anti-glare plate 60. In this way, the cross-section is made of a straight "V" shape, the deposition plate 60, the plurality of hemispherical protrusions (60b) is attached to the upper surface of the plasma damage applied to the upper surface of the deposition plate 60 The influence of damage can be reduced because the linear " V " shape and the hemispherical protrusion 60b are received at a predetermined angle. In addition, since foreign matters generated by plasma damage are collected between the “V” -shaped central portion and the hemispherical protrusion 60b, the foreign matters can be prevented from being scattered to the lower surface of the chamber 21. As a result, the adhesion plate 60 illustrated in FIGS. 8A and 8B may reduce plasma damage to suppress foreign matter generation, and may also reduce the influence of foreign matters on the thin film formed on the substrate 27.

9A and 9B are a perspective view and a cross-sectional view of the barrier plate of FIG. 3 according to a fourth embodiment of the present invention.

9A and 9B has a top plate of one circular shape and a cross section of one of the straight "V" shapes. In addition, a plurality of triangular shaped protrusions 70b are further provided on the upper surface of the anti-stick plate 60. Such a plurality of triangular shaped protrusions 70b may be uniformly disposed on the grooves formed in a “V” shape, that is, regularly without any gaps therebetween, or may be irregularly formed. In addition, the plurality of triangular shaped protrusions 70b may be formed on the upper surface of the anti-stick plate 50 having a curved “V” shaped cross section. The upper area of the anti-stick plate 70 has a size proportional to the space between the first to fourth target plates 24a, 24b, 54a, and 54b. 9A and 9B, the upper surface of the barrier plate 70 is formed in a circular shape, but the upper plate of the barrier plate 70 may be formed in one of a rectangle and a polygon. Here, a plurality of fixing parts 70a may be further provided below the adhesion plate 70 to fix the adhesion plate 70 to the bottom surface of the chamber 21. In this way, the cross section is formed in a straight "V" form, the anti-deposition plate 70 provided with a plurality of triangular-shaped protrusions (60b) on the upper surface is plasma damage applied to the upper surface of the anti-deposition plate 70 Since it is received at a predetermined angle of the straight "V" shape and the triangular projections (60b) form, the effect of damage can be reduced. In addition, since foreign matters generated due to plasma damage are collected between the center portion of the “V” shape and the triangular shaped protrusion 60b, the foreign matters may be prevented from scattering to the lower surface of the chamber 21. As a result, the adhesion plate 70 illustrated in FIGS. 9A and 9B may reduce plasma damage to suppress foreign matter generation, and may also reduce the influence of foreign matters on the thin film formed on the substrate 27.

As described above, the sputtering apparatus according to the present invention can reduce the process time and improve the spatial equipment efficiency by allowing a plurality of materials to be deposited in one chamber 21. In addition, since the number of sputtering apparatuses for performing a sputtering deposition process can be reduced, manufacturing costs of flat panel display devices can be reduced.

In the detailed description of the present invention described above with reference to the preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge of the present invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the spirit and scope of the art.

Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

1 is a cross-sectional view showing an organic EL device.

Figure 2 is a cross-sectional view showing a sputtering apparatus according to the prior art.

3 is a cross-sectional view showing a sputtering apparatus according to an embodiment of the present invention.

4 is a perspective view showing the internal structure of the sputtering apparatus shown in FIG.

FIG. 5 is a configuration diagram for describing movement paths of the first and second shutters illustrated in FIG. 4. FIG.

6A and 6B are a perspective view and a cross-sectional view of the anti-stick plate of FIG. 3 according to the first embodiment of the present invention.

7A and 7B are a perspective view and a cross-sectional view of the anti-fouling plate of FIG. 3 according to a second embodiment of the present invention.

8A and 8B are a perspective view and a cross-sectional view of the barrier plate of Figure 3 according to a third embodiment of the present invention.

9A and 9B are a perspective view and a cross-sectional view of the anti-fouling plate of FIG. 3 according to a fourth embodiment of the present invention.

* Brief description of symbols for the main parts of the drawings.

21 chamber 26 substrate plate

29, 39, 42: first shutter portion 28, 38, 41: second shutter portion

25a, 25b, 55a, 55b: first to fourth targets

24a, 24b, 54a, 54b: first to fourth target plates

Claims (8)

A vacuum capable chamber; First and second targets facing each other in parallel with a predetermined distance on first and second sides inside the chamber; First and second target plates on which the first and second targets are respectively seated; And, In order to reduce the plasma damage generated during the sputtering process and to prevent foreign substances caused by the plasma damage from spreading on the bottom surface of the chamber, a cross section provided at the bottom of the chamber is provided with a “V” shaped barrier plate. Sputtering apparatus, characterized in that. The method of claim 1, The sputtering device Third and fourth targets facing in parallel to each other at a predetermined distance on the third and fourth sides inside the chamber, Third and fourth target plates on which the third and fourth targets are respectively seated; A plurality of magnets for forming a magnetic field on the back surface of each of the first to fourth target plates, A plurality of assemblies for fixing the first to fourth target plates; A first shutter unit covering the first target or the third target from ions generated in the plasma state, and And a second shutter unit covering the second target or the fourth target from ions generated in the plasma state. The method of claim 2, The first shutter unit A first shutter positioned at a front surface of the first target or the third target at a predetermined interval to block the first target or the third target from the ions; A first rotational axis for positioning the first shutter in front of the first target or the third target by rotating the first shutter to at least one of the first to third axes, and And a first shutter driver for driving the first rotational shaft. The method of claim 3, wherein The second shutter unit A second shutter positioned at the front surface of the second target or the fourth target at a predetermined interval to block the second target or the fourth target from the ions; A second axis of rotation for positioning said second shutter in front of said second target or fourth target by rotating said second shutter in at least one of first to third axes A to C, and And a second shutter driver for driving the second rotational shaft. The method of claim 4, wherein The first and second targets are ITO, copper (Cu), aluminum (Al), molybdenum (Mo), silver (Si), such as any one of the materials made of the same, The third and fourth targets may be made of a material different from the first and second targets, but may be formed of any one of materials such as ITO, copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Si). Sputtering apparatus, characterized in that made of the same material. The method of claim 1, The barrier plate is Sputtering apparatus is formed in a size proportional to the space between the first and second target plate, the upper surface is formed of any one of a circle, a rectangle, and a polygon. The method of claim 6, The barrier plate is A sputtering apparatus, characterized in that the cross section is formed in one straight "V" shape or curved "V" shape. The method of claim 7, wherein The barrier plate is A sputtering apparatus, characterized in that a plurality of triangular-shaped protrusions or a plurality of hemispherical protrusions are further formed on the upper surface.

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