KR20200081844A - A Sputter Having a Means for Suppressing The Occurrence of An Electrode Plate Etching Phenomenon of A Plasma Source - Google Patents

Abstract

The present invention relates to a sputter including an electrode plate etching inhibition means of a plasma source. According to the present invention, the sputter includes: a chamber providing a deposition space where substrate deposition is performed; a vacuum pump setting vacuum for the deposition space; a target including a deposition substance to be sputtered to the substrate; and a plasma source for forming plasma such that the deposition substance can be sputtered from the target to the substrate. The plasma source includes: an electrode part provided to form plasma and including first and second electrode plates; a magnetic part for forming a magnetic field in a space where plasma is going to be formed by the electrode part; a power supply part electrically connected with the electrode part to supply power to the electrode part; and an etching inhibition means electrically connected with the electrode part, and inhibiting the etching of the first or second electrode plate. Therefore, the disclosed technology is capable of improving the stability and continuity of plasma generation by inhibiting the etching of the electrode plates of the plasma source, and contributing to an improvement in management efficiency and a reduction in sputter management costs.

Description

A Sputter Having a Means for Suppressing The Occurrence of An Electrode Plate Etching Phenomenon of A Plasma Source}

The present invention relates to a deposition equipment used in a semiconductor or display manufacturing process, and more particularly, to a sputter capable of suppressing the etching of the electrode plate of the plasma source.

In general, a semiconductor device or display manufacturing process includes various processes such as a deposition process, and among these processes are deposition processes.

Usually, the deposition process is performed in a deposition apparatus to deposit a material to be deposited on a substrate. Such deposition equipment is made through PVD equipment such as CVD equipment or sputtering.

Sputtering, which is one type of deposition equipment, can be variously structured according to the type of deposition film to be formed by sputtering. Among them, in the case of a reactive sputter, two electrode plates having planes are arranged toward the substrate side in the chamber to form a plasma, and when plasma is formed, electrons, ions, or radicals are moved to the substrate side, and Deposition was done on the surface.

In FIG. 1, a flat cross-section of a part of a plasma source of a sputter according to the prior art is shown. In the plasma source as shown in FIG. 1, power is supplied from the power supply unit 49 so that plasma can be formed between the first electrode plate 41 and the second electrode plate 42, and the first magnet 43 and the first The two magnets 44 were configured to form a magnetic field in the space between the first electrode plate 41 and the second electrode plate 42.

When plasma is formed in such a plasma source, electrons, ions, and radicals are formed, and these particles are moved to a target or substrate with high energy, and are moved toward the first electrode plate with an N pole under the influence of a magnetic field. In this process, the etching of the first electrode plate occurs, and as the etching progresses, the plasma has a bad influence on stable formation. In addition, since etching of the first electrode plate is required, replacement of the first electrode plate is required, and thus there is a problem in that management cost is incurred.

Republic of Korea Registered Patent No. 10-1441386 Republic of Korea Registered Patent No. 10-0967971

An object of the present invention is to solve the conventional problems as described above, to provide a sputter that can suppress the electrode plate of the plasma source is etched.

A sputter provided with an electrode plate etching suppression means of a plasma source according to an embodiment of the present invention for achieving the above object is a chamber that provides a deposition space for deposition on the substrate; A vacuum pump mounted in the chamber and configured to set a vacuum for the deposition space; A target mounted on the chamber and including a deposition material to be sputtered toward the substrate; And a plasma source mounted in the chamber and configured to form plasma to sputter the deposition material from the target toward the substrate. Including, wherein the plasma source is provided to form a plasma electrode portion including a first electrode plate and a second electrode plate; A magnetic portion for forming a magnetic field on a space in which plasma is to be formed by the electrode portion; A power supply unit electrically connected to the electrode unit to supply power to the electrode unit side; And an etch inhibiting means electrically connected to the electrode part to suppress etching of the first electrode plate or the second electrode plate. It may also be characterized as including one.

Here, the power supply unit supplies RF power to the electrode unit side, and the etching suppression means may further feature blocking high frequency current so that a low frequency current is supplied from the power supply unit to the electrode unit side.

Furthermore, the etching inhibiting means may be characterized as another high-frequency filter.

Furthermore, the distance between the first electrode plate and the second electrode plate is the narrowest at the one end of each of the first electrode plate and the second electrode plate, and the first electrode plate and the second Each of the electrode plates is spaced so as to have the largest gap at the other end, and the first electrode plate and the second electrode plate have a shape in which a gap is opened toward the deposition space where the substrate is disposed, and the front surface thereof is Another feature may be that a portion of the other side of the first electrode plate facing the deposition space is made of a non-planar surface.

Furthermore, another feature may be that a part of the other side of the second electrode plate having a front surface facing the deposition space is made of a non-planar surface.

Furthermore, the magnetic part may include: a first magnet body disposed on a rear side of the first electrode plate with a front side facing the deposition space; And a second magnetic body disposed on a rear side of the second electrode plate with a front side facing the deposition space side.

Furthermore, the first magnet body may be further characterized in that the S pole is disposed to face the rear surface of the first electrode plate, and the rear surface of the first electrode plate is disposed to cover the first magnetic body. have.

Furthermore, the second magnet body may be characterized in that the N pole is disposed to face the rear surface of the second electrode plate, and the second magnet body is disposed to cover the rear surface of the second electrode plate. have.

Furthermore, another feature of the other side of the first electrode plate forming the non-planar surface is a curved surface.

Furthermore, another feature of the other side forming the non-planar surface of the front surface of the second electrode plate may be a curved surface.

The sputter provided with an electrode plate etching suppression means of the plasma source according to the present invention suppresses the etching of the electrode plate of the plasma source, thereby improving the stability and persistence of plasma generation, and helping to reduce sputter management costs and increase management efficiency. It has an effect.

1 is a schematic cross-sectional view schematically showing a part of a plasma source of a sputter according to the prior art.
2 is a schematic cross-sectional view schematically showing a sputter provided with an electrode plate etching suppression means of a plasma source according to an embodiment of the present invention.
3 is a conceptual diagram schematically showing a portion of a plasma source in a sputter provided with an electrode plate etching suppression means of the plasma source according to an embodiment of the present invention.
4 is a view schematically illustrating another form of a portion of a plasma source in a sputter provided with an electrode plate etching suppression means of the plasma source according to an embodiment of the present invention.
5 is a view schematically illustrating another form of a portion of a plasma source in a sputter provided with an electrode plate etching suppression means of the plasma source according to an embodiment of the present invention.

Hereinafter, preferred embodiments will be described with reference to the accompanying drawings so that the present invention may be more specifically understood.

2 is a schematic cross-sectional view schematically showing a sputter provided with an electrode plate etching suppression means for a plasma source according to an embodiment of the present invention, and FIG. 3 is a sputter provided with an electrode plate etching suppression means for a plasma source according to an embodiment of the present invention. Is a schematic view schematically showing a part of a plasma source, and FIG. 4 is a schematic view for explaining another form of a part of a plasma source in a sputter provided with an electrode plate etching suppression means of the plasma source according to an embodiment of the present invention. , FIG. 5 is a view schematically illustrating another form of a portion of a plasma source in a sputter provided with an electrode plate etching suppression means of the plasma source according to an embodiment of the present invention.

2 and 3, a sputter provided with an electrode plate etching suppression means for a plasma source according to an embodiment of the present invention includes a chamber 100, a vacuum pump 200, a target 300, and a plasma source 400. Including.

The chamber 100 provides a deposition space where deposition is performed on the substrate 10.

The vacuum pump 200, the target 300 which is a cathode, and the plasma source 400 are mounted around the chamber 10. In addition, the chamber door 110 is provided in the chamber 100 to open the deposition space to the outside.

The vacuum pump 200 is mounted in the chamber 100, and sets a vacuum for the deposition space.

The target 300 is mounted on the chamber 100 and includes a deposition material to be sputtered toward the substrate 10. The target 300 has a cylindrical shape formed long in one direction, and serves as a cathode during the deposition process. In this specification, it will be simply described as a target.

In addition, although not shown in the drawings, it is preferable that a gas part (not shown) that supplies atmospheric gas or reaction gas used in the deposition process into the deposition space is also provided.

The plasma source 400 is mounted in the chamber 100, and forms plasma so that sputtering of deposition material from the target to the substrate 10 can be performed. The plasma source 400 includes an electrode part, a magnetic part, a power supply part, and an etching suppression means.

Referring to FIG. 3, the electrode unit receives electric power from the power supply unit 490 to form a potential difference so that plasma can be generated. The electrode part includes a first electrode plate 411 and a second electrode plate 421.

The magnetic portion forms a magnetic field on the space where the plasma is to be formed by the electrode portion. Such a magnetic portion includes a first magnet body 430 and a second magnet body 440, and the first electrode plate 411 and the second electrode plate 421 of the electrode portion, respectively, as referred to in the drawings. It is preferably provided on the back side of.

In addition, the first magnet body 430 is disposed so that the S pole 433 faces the rear surface of the first electrode plate 411, and the first magnet body 430 covers the rear surface of the first electrode plate 411. It is preferably arranged. Here, reference numeral 431 denotes the N pole 431 of the first magnet 430, and together with the S pole 433, constitutes the first magnet 430.

In addition, the second magnet body 440 is disposed such that the N pole 441 faces the rear surface of the second electrode plate 421 so that the second magnet body 440 covers the rear surface of the second electrode plate 421. It is preferably arranged. In addition, reference numeral 443 denotes the S pole 443 of the second magnet 440, and constitutes the second magnet 440 together with the N pole 441.

As referred to in the drawings, the distance between the first electrode plate 411 and the second electrode plate 421 in the electrode portion is at one end of each of the first electrode plate 411 and the second electrode plate 421, respectively. It is preferable that the distance is the narrowest, and the first electrode plate 411 and the second electrode plate 421 are spaced apart from each other at the largest end.

In addition, it is preferable to have a form in which a gap between the first electrode plate 411 and the second electrode plate 421 is widened toward the deposition space where the substrate 10 is disposed. Here, the first magnet body 430 and the second magnet body 440 of the magnetic part located on the rear side of the electrode part also have a shape in which the gaps are spaced as in the first electrode plate 411 and the second electrode plate 421. desirable.

In addition, the thickness of the first electrode plate 411 as referred to in FIG. 3 is uniform throughout, and the thickness of the second electrode plate 421 may also be uniform throughout.

The power supply unit 490 is electrically connected to the first electrode plate 411 and the second electrode plate 421 of the electrode unit and supplies power. It is preferable that the power supply unit can supply radio frequency (RF) power to the first electrode plate 411 and the second electrode plate 421.

The etching inhibiting means is electrically connected to the electrode portion and suppresses etching of the first electrode plate 411 or the second electrode plate 421.

It is preferable that the etching suppression means can block high frequency current so that a low frequency current is supplied from the power supply unit 490 to the electrode unit side.

A high-frequency cutoff filter 500 is a preferred example of such an etch suppression means.

As referred to in the drawing, when the high-frequency cut filter 500, which is an etching suppression means, is connected while the power supply unit 490 for supplying RF power is electrically connected to the electrode unit, the high-frequency current is blocked and only low-frequency current flows. The electrode ground potential is stably maintained by using the high frequency cutoff filter 500. Therefore, etching of the first electrode plate 411 can be suppressed.

And the embodiment as referred to in FIGS. 4 and 5 is also preferred.

Referring to FIGS. 4 and 5, the embodiment is substantially the same as described above with reference to FIG. 3, but shows another embodiment of the electrode portion and the magnetic portion.

4, the other part 415 of the first electrode plates 411 and 415 whose front side faces the deposition space side is also preferably formed as a non-planar surface. In addition, it is also preferable that the other part 425 of the second electrode plates 421 and 425 whose front side faces the deposition space side is made of a non-planar surface.

More preferably, it is more preferable that the first electrode plates 411 and 415 and the second electrode plates 421 and 425 have a symmetrical shape based on the center symmetric center line CL.

It is also preferable that the other part 415 forming a non-planar surface on the front surfaces of the first electrode plates 411 and 415 is formed as a curved surface. In accordance with this, it is also preferable that the other part 425 forming a non-planar surface at the front surfaces of the second electrode plates 421 and 425 is also formed as a curved surface.

As described above, while the thicknesses of the first electrode plates 411 and 415 and the second electrode plates 421 and 425 are relatively constant, the other portion 415 of the first electrode plate and the other portion of the second electrode plate ( 425) may be made of a non-planar or curved surface.

The section 1FA in which the first electrode plates are flat in the first electrode plates 411 and 415 may be referred to as a first plane section 1FA. In addition, the section 1CA in which the first electrode plate is curved may be referred to as a first curve section 1CA.

Similarly, the second electrode plates 421 and 425 may be referred to as a second plane section 2FA in a section 2FA in which the second electrode plates are flat in the second electrode plates 421 and 425. In addition, the section 2CA in which the second electrode plate is curved may be referred to as a second curve section 2CA.

Accordingly, the first electrode plates 411 and 415 have a first curve section 1CA and a first plane section 1FA, and the second electrode plates 421 and 425 have a second curve section 2CA and a second plane. There is a section (2FA).

As described above, the magnetic portion includes first magnet bodies 431 and 433 and second magnet bodies 441 and 443.

4, the first magnets 431 and 433 are disposed on the rear side of the first electrode plates 411 and 415 whose front side faces the deposition space. Here, the S-pole 433 is disposed to face the rear surfaces of the first electrode plates 411 and 415, so that the first magnetic bodies 431 and 433 cover the rear surfaces of the first electrode plates 411 and 415. It is preferably arranged.

Here, reference numeral 431 denotes the N poles of the first magnets 431 and 433. Therefore, it can be said that the N pole 431 and the S pole 433 form the first magnet bodies 431 and 433.

In addition, second magnets 441 and 443 are disposed on the rear side of the second electrode plates 421 and 425 facing the deposition space. The second magnetic bodies 441 and 443 are disposed such that the N pole 441 faces the rear surfaces of the second electrode plates 421 and 425, and the rear surfaces of the second electrode plates 421 and 425 are the second magnetic bodies. It is preferred that (441, 443) is arranged to cover.

Here, reference numeral 443 denotes the S pole of the second magnetic bodies 441 and 443. Therefore, it can be said that the N pole 441 and the S pole 443 form the second magnet bodies 441 and 443.

In the first plane section 1FA, the first magnet bodies 431 and 433 also have a plane according to the shape of the first electrode plate 411. In the second plane section 2FA, the second magnet bodies 440 and 460 have a flat surface according to the shape of the second electrode plate 421.

In addition, in the first curve section 1CA, the first magnets 430 and 450 also have a non-planar or curved surface according to the shape of the first electrode plate 415. In the second curve section 2CA, the second magnets 440 and 460 have a non-planar or curved surface depending on the shape of the second electrode plate 425.

Also, like the first electrode plates 411 and 415 and the second electrode plates 421 and 425 described above, the first magnet bodies 430 and 450 and the second magnet bodies 440 and 460 also have a center symmetrical center line CL. It is desirable to have a symmetrical shape as a reference.

In this way, the electrode portion and the magnetic portion of the plasma source 400 may be provided in the form as referred to in FIG. 4 or 5 and is preferable.

4 or 5, power is supplied from a radio frequency (RF) power source 490 to the first electrode plates 411 and 415 and the second electrode plates 421 and 425 and reacts into the deposition space. Plasma may be formed while gas is supplied. As the reaction gas, oxygen gas or the like may be used depending on the type of the film to be deposited on the substrate 10.

In addition, since the high frequency current is cut off from the power supply unit 490 by the high frequency cutoff filter 500 provided as an etching suppression means, low frequency current is supplied, thereby suppressing the phenomenon that the electrode plate is etched by maintaining the electrode ground potential.

When plasma is formed, electrons, ions, and radicals are formed. At this time, ions and electrons are bound to the magnetic field.

When the electrode plate is composed of only one plane, the distance between the two electrode plates is farther away from the other end, so the strength of the magnetic field has to be weakened.

However, in the form of FIG. 4 or 5, since the distance between the other end of the first electrode plate of the plasma source and the other end of the second electrode plate is close, weakening of the magnetic field strength is suppressed. Therefore, the probability that ions and electrons escape from the confinement of the magnetic field and go to the substrate is greatly reduced.

Therefore, since only the radicals reach the substrate side, the temperature rise of the substrate is suppressed compared to the prior art, so that reactive sputtering to a substrate such as a film susceptible to high temperatures is possible.

As described above, the sputter provided with an electrode plate etching suppression means for a plasma source according to an embodiment of the present invention suppresses etching of an electrode plate of a plasma source, thereby improving plasma generation stability and durability, and reducing and managing sputter management costs. There is an advantage to help improve efficiency.

The ions and electrons are prevented from escaping from the magnetic field bond between the two electrode plates of the plasma source, and only the radicals can go to the substrate, so the temperature rise of the substrate due to collision with ions or electrons is suppressed. Therefore, the advantage of being able to sputter on a substrate such as a film vulnerable to high temperatures is also possible.

As described above, the detailed description of the present invention has been made by the embodiments with reference to the accompanying drawings, but since the above-described embodiments are merely described as preferred embodiments of the present invention, the present invention is described above. It should not be understood as being limited to the embodiment only, and the scope of the present invention should be understood as the following claims and equivalent concepts.

10: substrate
100: chamber 200: vacuum pump
300: target 400: plasma source
411, 415: first electrode plate 421, 425: second electrode plate
433: S pole of the first magnet 441: N pole of the second magnet
431: N pole of the first magnet 443: S pole of the second magnet
490: power supply 500: high-frequency cutoff filter

Claims (10)

A chamber providing a deposition space in which deposition is performed on a substrate;
A vacuum pump mounted in the chamber and configured to set a vacuum for the deposition space;
A target mounted on the chamber and including a deposition material to be sputtered toward the substrate; And
A plasma source mounted in the chamber and configured to form plasma to sputter the deposition material from the target toward the substrate; Including,
The plasma source,
An electrode unit provided to form plasma and including a first electrode plate and a second electrode plate;
A magnetic portion for forming a magnetic field on a space in which plasma is to be formed by the electrode portion;
A power supply unit electrically connected to the electrode unit to supply power to the electrode unit side; And
An etch inhibiting means electrically connected to the electrode part to suppress etching of the first electrode plate or the second electrode plate; Characterized in that it comprises,
A sputter provided with an electrode plate etching suppression means for a plasma source.

According to claim 1,
The power supply unit supplies RF power to the electrode unit side,
The etching inhibiting means,
It characterized in that to block the high-frequency current so that the low-frequency current is supplied from the power supply to the electrode portion,
A sputter provided with an electrode plate etching suppression means for a plasma source.
According to claim 2,
The etching inhibiting means is characterized in that the high-frequency blocking filter,
A sputter provided with an electrode plate etching suppression means for a plasma source.
According to claim 3,
The gap between the first electrode plate and the second electrode plate,
The first electrode plate and the second electrode plate is the narrowest at the one end of each side,
The first electrode plate and the second electrode plate are spaced apart from each other at the other end to be the largest,
The first electrode plate and the second electrode plate have a shape in which a gap is widened toward the deposition space side where the substrate is disposed,
Characterized in that a portion of the other side of the first electrode plate facing the side of the deposition space is made of a non-planar surface,
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 4,
Characterized in that a part of the other side of the second electrode plate with a front side facing the deposition space side is made of a non-planar surface,
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 5,
The magnetic portion,
A first magnet body disposed on a rear side of the first electrode plate with a front side facing the deposition space side; And
It characterized in that it comprises; a second magnet disposed on the rear side of the second electrode plate facing the front side of the deposition space,
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 6,
The first magnet body,
S pole is disposed so as to face the rear surface of the first electrode plate, characterized in that the first magnetic body is disposed to cover the rear surface of the first electrode plate,
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 7,
The second magnet body,
Characterized in that the N-pole is disposed to face the rear surface of the second electrode plate, and the second magnetic body covers the rear surface of the second electrode plate.
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 6,
Part of the other side forming a non-planar surface in front of the first electrode plate is characterized in that the curved surface,
A sputter provided with an electrode plate etching suppression means for a plasma source.
The method of claim 9,
The other side of the second electrode plate forming a non-planar surface is characterized in that the curved surface,
A sputter provided with an electrode plate etching suppression means for a plasma source.

Images