KR20060027280A - Faced target sputtering device and method of fabricating oled by using the same - Google Patents

Abstract

The present invention has a box-shaped sputtering target portion formed in a box-shaped case in which a pair of target portions face each other and is accommodated in a box-shaped case in which a portion of the substrate direction is opened, thereby preventing substrate collision of particles having high energy generated during thin film formation. A sputtering apparatus for preventing damage to a film caused by the film, and a method of manufacturing an organic light emitting display device using the same, the counter-target sputtering apparatus of the present invention comprises a chamber comprising a chamber constituting the body, a substrate mounting portion for mounting a substrate; ; A box having a first target portion and a second target portion disposed at a predetermined distance with the sputtering targets provided to face each other, the first target portion and the second target portion, and a portion of which is opened toward the substrate mounting portion It has a structure including at least one box-shaped sputtering target portion having a case of the form.

Opposing sputtering, boxed, organic electroluminescent displays

Description

Facing target sputtering device and method of fabricating OLED by using the same}

1 is a view for explaining a leakage current of an organic light emitting display device formed using a conventional sputtering device.

Figure 2a is a schematic diagram for explaining a counter-target sputtering apparatus according to an embodiment of the present invention.

2B is a view for explaining a sputtering target unit according to an embodiment of the present invention.

Figure 2c is a perspective view for explaining a counter-target sputtering apparatus according to an embodiment of the present invention.

Figure 3a is a schematic diagram for explaining an opposed target sputtering apparatus according to another embodiment of the present invention.

3B is a perspective view of an opposing target sputtering device according to another embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device using the opposite target sputtering device of the present invention.

5 is a view for explaining a leakage current of an organic light emitting display device using the opposite target type sputtering device of the present invention.

(Explanation of symbols for main parts of drawing)

100; Chamber 110; chamber

120; A substrate mount 130; Target part transfer device

140; Barrier plate

200, 400, 500; Box Sputtering Target

200 A; A first target portion 200B; Second target portion

200C; Boxed cases 211 and 215; Sputtering target

220; Target plate 230; Magnetic field generating means

240; Yoke 250; Cooling system

260; Target body 270; Hinge means

280; Gas supply means 300; Power supply

600; Insulating substrate 610; Bottom electrode

620; A pixel defining layer 625; Opening

630; Organic layer 640; Upper electrode

650; Shield

The present invention relates to a sputtering device and a method of manufacturing an organic light emitting display device using the same, and more particularly, a box-type shape in which a pair of target parts are disposed to face each other in a box-shaped case in which a portion of a substrate direction is opened. The present invention relates to a sputtering apparatus having a sputtering target portion of a film and preventing damage of a film due to a substrate collision of particles having high energy generated during thin film formation, and a method of manufacturing an organic light emitting display device using the same.

In general, an organic light emitting display device injects electrons and holes into an emission layer from an electron injection electrode and a hole injection electrode, respectively. A light emitting display device that emits light when an exciton in which injected electrons and holes are coupled falls from an excited state to a ground state.

Due to this principle, unlike a conventional thin film liquid crystal display device, since a separate light source is not required, there is an advantage of reducing the volume and weight of the device.

A method of driving the organic light emitting display device may be divided into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting display device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting display device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wirings increases.

Therefore, the pass matrix organic electroluminescent display device is used when applied to a small display element, whereas the active matrix organic electroluminescent display device is used when applied to a large area display device.

In addition, the organic light emitting display device has a structure in which an organic layer including a light emitting layer made of Alq 3 is generally disposed between an upper electrode and a lower electrode. At this time, any one of the upper electrode and the lower electrode, for example, the lower electrode serves as an anode electrode and the other of the upper and lower electrodes, for example, the upper electrode serves as a cathode electrode to emit light.

The organic light emitting display device differs depending on the light emission form of the organic light emitting display device. Generally, the upper electrode and the lower electrode are generally formed by depositing a metal film or a transparent conductive film through a sputtering method. do.

This sputtering method is indispensable in the deposition process technology represented by electronic device manufacturing processes such as an organic light emitting display device, and is widely known as a dry process technology having a wide application range. A rare gas is introduced, and cathode direct current (DC) power or high frequency (RF) power including a sputtering target is supplied at a high voltage of 150 V or higher to form a film through glow discharge.

However, the applied voltage has a close relationship with the energy of the particles protruding from the target during plasma formation. The sputtering method increases the generation of particles having a high energy of 100 eV or more by supplying power at 150 V or more.

Particles having high energy of 100 eV or more collide with the substrate, and the temperature after the sputtering process rises to about 200 ° C., thereby damaging the substrate. In addition, the particles having a high energy of 100 eV or more may damage the thin film when other thin films are formed on the substrate.

In particular, when the upper electrode is formed on the organic layer including the light emitting layer of the organic light emitting display device through a sputtering method, particles having a high energy of 100 eV or more generated during the sputtering process collide with the organic layer so as to form the upper electrode. The organic layer is damaged, and due to the damage of the organic layer, as shown in FIG. 1, a leakage current is greatly increased in a reverse bias region of the organic light emitting diode display.

In addition, during the sputtering process, there is a problem in that the sputtering material may not be deposited on the substrate and fall down. As a result, when accumulated on the sputtering target, arc discharge occurs on the sputtering target, thereby causing a problem in that the sputtering target is damaged.

An object of the present invention is to solve the above-mentioned problems of the prior art, the present invention is a box-shaped sputtering target portion formed in a form in which a pair of target portions are disposed to face each other in a box-shaped case in which a portion of the substrate direction is opened The present invention provides a sputtering apparatus that prevents damage to a film due to a substrate collision of particles having high energy generated when a thin film is formed, and a method of manufacturing an organic light emitting display device using the same.

An opposite target type sputtering apparatus of the present invention for achieving the above object comprises: a chamber comprising a chamber constituting a body and a substrate mounting portion for mounting a substrate; A box having a first target portion and a second target portion disposed at a predetermined distance with the sputtering targets provided to face each other, the first target portion and the second target portion, and a portion of which is opened toward the substrate mounting portion It has a structure including at least one box-shaped sputtering target portion having a case of the form.

In this case, the first target portion and the second target portion, respectively, the target body, a target plate supported by the target body to mount the sputtering target, a yoke disposed on the back surface of the target plate, and disposed inside the target body It is preferable to provide a magnetic field generating means.

The magnetic field generating means is preferably 4.5 cm or more, and more preferably the magnetic field generating means is 6 cm or more.

The yoke is made of ferromagnetic or paramagnetic material, and preferably the yoke is made of ferromagnetic material. In this case, the ferromagnetic material is any one of iron, cobalt, nickel and alloys thereof.

The first target portion and the second target portion may further include cooling means for cooling the magnetic field generating means.

The first target portion and the second target portion may further include a sputtering gas supply means for supplying a sputtering gas, the pressure of the sputtering gas between the first target portion and the second target portion is 0.1mTorr to 100mTorr desirable.

The first target portion and the second target portion are connected to the case through a hinge means.

The sputtering target portion may further include a foreign matter removing means on the inner bottom surface of the case.

An inner wall of the chamber may further include a barrier plate for preventing contamination of the chamber.

In addition, the method of manufacturing the organic light emitting display device of the present invention comprises the steps of forming a lower electrode on the substrate; Forming a pixel defining layer having an opening exposing a portion of the lower electrode; Forming an organic layer having at least a light emitting layer on the pixel defining layer; And forming an upper electrode on the organic film by using an opposite target type sputtering apparatus having the box-shaped sputtering target portion.

The method may further include forming a protective layer on the upper electrode to protect the upper electrode and the organic layer.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Figure 2a is a schematic diagram for explaining a counter-target sputtering apparatus according to an embodiment of the present invention, Figure 2b is a view for explaining a sputtering target portion according to an embodiment of the present invention, Figure 2c is a view of the present invention It is a perspective view for demonstrating the opposed target type sputtering apparatus which concerns on an Example.

2A to 2C, the opposite target type sputtering apparatus according to the embodiment of the present invention includes a chamber part 100 constituting the body of the opposite target type sputtering device, and installed in the chamber part 100. The box-shaped sputtering target part 200 and the power supply device 300 which consist of an opening form are comprised.

The chamber unit 100 is a chamber 110 forming the body of the opposing target sputtering apparatus, a substrate mounting unit 120 on which the substrate S is mounted, and a box type for transferring the box-type sputtering target unit 300. It comprises a sputtering target portion transfer device 130.

In this case, the chamber 110 is a vacuum chamber, and the chamber 110 maintains a vacuum between 0.1 mTorr and 100 mTorr.

The substrate mounting unit 120 mounts the substrate S and supports the substrate S so as to face the box-type sputtering target unit 200.

The target portion transfer device 130 is a device for transferring the box-type sputtering target portion 200, by transferring the box-type sputtering target portion 200, it can induce uniform sputtering on a larger substrate.

In addition, the chamber part 100 may further include an adhesion plate 140 along the inner wall of the chamber 110 to prevent the inside of the chamber 110 from being contaminated by the sputtering material during the sputtering process.

The box-type sputtering target portion 200 is a box-shaped case 200C which becomes a body of the pair of first target portion 200A and the second target portion 200B facing each other, and the box-type sputtering target portion 200. It is made of a structure having a.

The pair of first target portion 200A and the second target portion 200B are each formed of a sputtering target 211 and 215, a target plate 220, a magnetic field generating means 230, a yoke 240, and a cooling device ( 250 and a target body 260, the target plate 220 is supported by the target body 260 to mount the sputtering targets 211 and 215, and the yoke 240 is the target plate 220. The magnetic field generating means 230 is configured to be disposed inside the target body 260.

The sputtering targets 211 and 215 are mounted to the target plate 220 and disposed to face each other at the first target portion 200A and the second target portion 200B. In addition, the sputtering targets 211 and 215 may be formed of a material to be formed on the substrate S, and the first target part 200A may be formed according to the type of material to be formed on the substrate S. The sputtering targets 211 and 215 of the second target portion 200B may be made of the same material or different materials.

For example, the sputtering targets 211 and 215 may be made of aluminum (Al), aluminum alloy (Al alloy), and equivalents thereof.

Alternatively, the sputtering targets 211 and 215 may be indium-tin oxide (ITO), indium-zinc oxide (IZO), indium oxide (IO), znO, tin-zinc oxide (tzO), AZO, GZO, or equivalents thereof. It may be made of.

In addition, the sputtering targets 211 and 215 may be made of different materials to form a thin film made of a compound made of two or more materials on the substrate S. FIG. For example, one of the sputtering targets 211 and 215 may be made of ITO, and the other may be made of IZO to form a thin film made of ITZO on the substrate S. That is, by using different materials for the sputtering targets 211 and 215, the materials formed on the substrate S may be variously controlled.

The target plate 220 is a part for mounting the sputtering targets 211 and 215 and is fixed to the target body 260.

The magnetic field generating means 230 is a means for generating a magnetic field in a space between the sputtering targets 211 and 215 of the first target portion 200A and the second target portion 200B facing each other. The magnetic field generating means 230 of the portion 200A and the second target portion 200B are arranged with different polarities.

In addition, the magnetic field generating means 230 is characterized in that it is longer than the length of the magnetic field generating means used in the conventional sputtering apparatus. In other words, the length of the magnetic field generating means used in the conventional sputtering apparatus is generally 1.5 cm to 2 cm, but the length of the magnetic field generating means 230 of the present invention is preferably 3 to 5 times its length. That is, the length of the magnetic field generating means 230 is preferably 4.5 cm or more, and more preferably the magnetic field generating means 230 is 6 cm or more. This means that the longer the length of the magnetic field generating means 230 itself, the larger the space of the magnetic field formed by the magnetic field generating means becomes, and thus, between the first target portion 200A and the second target portion 200B. This is because it is possible to reduce the flux component out of space.

The yoke 240 makes the magnetic field generated by the magnetic field generating means 230 more uniform, and for this purpose, the yoke 240 is preferably made of a material capable of being magnetized by the magnetic field generating means 230. That is, the yoke 240 is preferably made of a ferromagnetic or paramagnetic material, and more preferably the yoke 240 is made of a ferromagnetic material. When the yoke 240 is made of ferromagnetic material, it is made of any one of iron, cobalt, nickel, and alloys thereof.

The cooling device 250 cools the magnetic field generating means 230 of the first target portion 200A and the second target portion 200B by a heat conduction method through the flow of the cooling water.

The target body 260 is a body of the first target portion 200A and the second target portion 200B, and each component of the first target portion 200A and the second target portion 200B, for example, For example, the sputtering targets 211 and 215, the target plate 220, the magnetic field generating means 230, the yoke 240, the cooling device 250, and the like are supported.

Meanwhile, the target body 260 of the first target portion 200A and the second target portion 200B is connected to the case 200C of the box-type sputtering target portion 200 through the hinge means 270, respectively. The hinge means 270 is such that the sputtering targets 211 and 215 of the first target portion 200A and the second target portion 200B face upward when the sputtering targets 211 and 215 are replaced. By doing so, the sputtering targets 211 and 215 may be smoothly replaced.

In addition, the first target portion 200A and the second target portion 200A may further include a gas supply means 280 for supplying a sputtering gas. The gas supply means 280 is disposed above and below each of the first target portion 200A and the second target portion 200B to serve to stably and efficiently generate plasma during the sputtering process.

The case 200C becomes a body of the box-shaped sputtering target portion 200 to accommodate the first target portion 200A and the second target portion 200B. In this case, the case 200C is formed in the form of a box in which a portion of the direction toward the substrate S is opened.

In addition, although not shown in the drawing, the box-shaped sputtering target unit 200 is connected to an external suction pump to suck foreign substances and discharge them to the outside, and further includes a foreign substance removing means located on the bottom surface of the case 200C. Can be. The foreign matter removing means is to prevent the foreign matter that may occur during the sputtering process through the sputtering apparatus of the present invention to be accumulated on the bottom surface of the case 200C of the sputtering target portion 200, foreign matter during the sputtering process substrate (S) prevents inflow into the phase. In addition, the purpose of the present invention is to prevent sputtering material from being sputtered and accumulated on the bottom surface to affect the sputtering targets 211 and 215.

The power supply device 300 supplies (-) power to the pair of opposing sputtering targets 211 and 215 so that the pair of opposing sputtering targets 211 and 215 operate as cathode electrodes, and the chamber ( 110 serves as an anode electrode.

Operation of the opposed target type sputtering apparatus 100 according to the embodiment of the present invention as described above is as follows.

The substrate S is mounted on the substrate mounting part 120 of the chamber part 100, and the first target part 200A and the first target part 200A and the sputtering gas such as argon (Ar) gas are supplied through the sputtering gas supply means 280. It supplies to the space between 2 target parts 200B.

At this time, when the material formed on the substrate S by the opposing target sputtering apparatus according to an embodiment of the present invention is a material containing oxygen, that is, an oxide, oxygen (in addition to the argon (Ar) gas) O ₂ ) may be injected into the chamber 110. At this time, the pressure in the chamber 110, in particular, the pressure of the sputtering gas between the first target portion 200A and the second target portion 200B is preferably 0.1mTorr to 100mTorr. When the pressure of the sputtering gas is higher than 100 mTorr, the content of a component of the sputtering gas, such as argon (Ar), increases in the thin film formed on the substrate S through the sputtering method, resulting in deterioration of characteristics of the thin film. Because. In addition, when the pressure of the sputtering gas is lower than 0.1 mTorr, it is because the formation of plasma in the space between the first target portion 200A and the second target portion 200B is difficult, resulting in a low sputtering efficiency.

Then, as shown in FIG. 2C, the sputtering targets 211 and 215 of the first target portion 200A and the second target portion 200B face each other simultaneously through the power supply device 300 (−). When power is applied, sputtering plasma is generated and constrained in the space between the first target portion 200A and the second target portion 200B by the magnetic field generated by the magnetic field generating means 230. At this time, the plasma is composed of gamma-electrons, anion, cation and the like.

In this case, the electrons in the plasma form a high-density plasma while rotating along a magnetic force line connecting the sputtering targets 211 and 215 of the first target portion 200A and the second target portion 200B facing each other. In addition, the high-density plasma is maintained while reciprocating by the negative power applied to the sputtering targets 211 and 215. That is, all electrons or ions formed in the plasma or formed by the applied power are rotated along the magnetic field lines. Similarly, gamma-charged ion particles such as electrons, anions, and cations also reciprocate along the magnetic field lines. As a result, charged particles having a high energy of 100 eV or more are accelerated to the opposite target and constrained in the plasma formed in the space between the first target portion 200A and the second target portion 200B. In this case, the particles sputtered at any one of the sputtering targets 211 and 215 also have particles with high energy of 100 eV or more are accelerated to the opposite target to the first target portion 200A and the second target portion 200B. There is no effect on the substrate (S) lying perpendicular to the plasma formed in the space between), and a thin film is formed on the substrate (S) by diffusion of neutral particles having a relatively low energy.

Therefore, compared with the case of using the conventional sputtering apparatus, damage by the plasma, that is, damage to the substrate S due to collision of particles having high energy, can be prevented, and a thin film can be formed on the substrate S. FIG.

In addition, since there is no collision of particles with high energy of 100 eV or more, in the conventional sputtering apparatus, the temperature after the substrate S sputtering process was about 200 ° C., but the sputtering apparatus using the sputtering apparatus according to the embodiment of the present invention. The temperature of the board | substrate S after a process can be below. According to the experiment, the temperature of the substrate S may be maintained at 40 ° C. or lower without installing a separate cooling system of the substrate S, thereby minimizing damage to the organic material and damage to the substrate S.

In addition, the substrate S is positioned above the inside of the chamber 110, and the sputtering targets 211 and 215 of the first target portion 200A and the second target portion 200B are vertically erected. Since the sputtering process at, the foreign matter and sputtering material generated in the conventional counter-targeting sputtering device is accumulated in the lower portion, it is possible to prevent the arc discharge generated in the sputtering target of the lower of the sputtering target (211, 215) Therefore, damage to the sputtering targets 211 and 215 due to arc discharge can be prevented. In addition, the foreign matter and the sputtering material may be removed through the foreign matter removal means provided on the inner bottom surface of the box-shaped case (200C).

In addition, since the target body 260 of the first target portion 200A and the second target portion 200B is connected to the box-shaped case 200C through the hinge means 270, the sputtering targets 211 and 215. ), The sputtering targets 211 and 215 may be directed upwards, so that the sputtering targets 211 and 215 may be replaced more smoothly. Therefore, the work time according to the replacement of the sputtering targets 211 and 215 can be further reduced.

On the other hand, Figure 3a is a schematic diagram for explaining a counter-targeting sputtering apparatus according to another embodiment of the present invention, Figure 3b is a perspective view of the counter-targeting sputtering apparatus according to another embodiment of the present invention.

3A and 3B, the counter-targeted sputtering apparatus according to another embodiment of the present invention is structurally similar to the counter-targeted sputtering apparatus as shown in FIGS. 2A to 2C. However, only a structure in which a plurality of box-type sputtering target parts 400 and 500 are provided in one chamber part 100 is different. That is, by installing a plurality of sputtering target parts 500 and 600 in the one chamber part 100, a larger substrate S can be sputtered.

4A and 4B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device using the opposite target sputtering device of the present invention.

Referring to FIG. 4A, the lower electrode 610 is formed on the insulating substrate 600. In this case, when the organic light emitting display device is an active matrix organic light emitting device (AMOLED), a thin film transistor TFT is previously formed on the insulating substrate 600.

After forming the lower electrode 610, a pixel defining layer 620 is formed on the entire surface of the insulating substrate 600, and the pixel defining layer 620 is photo-etched to expose a portion of the lower electrode 610. The opening 625 is formed. The pixel defining layer 620 may be formed of a phenol-based organic insulating material or a photosensitive organic insulating material such as polyimide (PI).

After the pixel defining layer 620 is formed, an organic layer 630 including at least a light emitting layer is formed on the opening 625. In this case, the organic layer 630 may be composed of several layers according to its function. Generally, the hole injection layer HIL, the hole transport layer HTL, the emission layer, the hole blocking layer HBL, At least one of the electron transport layer ETL and the electron injection layer EIL includes the light emitting layer EML.

After the organic layer 630 is formed, the insulating substrate 600 on which the organic layer 630 is formed is formed by using an opposite target type sputtering apparatus as illustrated in FIGS. 2A to 2C and FIGS. 3 and 3B. An upper electrode 640 is formed on the organic layer 630. In this case, when the upper electrode 640 is formed using the counter target sputtering apparatus, damage to the organic layer 630 due to particles having high energy generated in the plasma may be prevented.

After forming the upper electrode 640, the organic layer 630 including the upper electrode 640 and the light emitting layer on the upper electrode 640 is a protective film for preventing deterioration due to external oxygen and moisture. To form 650. The passivation layer 650 is generally made of an inorganic material such as SiNx or SiO 2 or an organic material such as acrylic, PI, PA, BCB, or the like.

Subsequently, although not shown in the drawings, an encapsulation substrate is used to encapsulate the lower electrode 610, the organic layer 630 including the emission layer, and the insulating substrate 600 including the upper electrode 640.

The lower electrode 610 and the upper electrode 640 may have various structures according to the light emission form of the organic light emitting display device. In general, when the organic light emitting display device is a bottom emission type, the lower electrode 710 may be formed of indium-tin oxide (ITO), indium-zinc oxide (IZO), or indium-tin-zinc oxide (ITZO). , IO (Indium Oxide), ZnO, TZO (Tin-Zinc Oxide), AZO, GZO or a transparent conductive film made of an equivalent thereof, the upper electrode 640 is made of Al, Al alloys or their equivalents It may be made of a metal film having excellent reflectivity. In addition, when the organic light emitting display device is a top emission type, the lower electrode 610 generally has a structure including a metal film having excellent reflectivity, for example, a double film structure including a metal film and a transparent conductive film. The upper electrode 640 may have a double layer structure of a translucent metal layer and a transparent conductive layer to match a work function relationship with the lower electrode 610. In addition, in the case where the organic light emitting display device is a double-sided light emission type, generally, a structure in which both the lower electrode 610 and the upper electrode 640 transmit light emitted from the organic layer 630 including the emission layer. For example, the lower electrode 610 may be formed of a transparent conductive layer, and the upper electrode 640 may be formed of a double layer structure of a translucent metal layer and a transparent conductive layer. And the structure of the upper electrode 640 is not limited.

5 is a view for explaining a leakage current of the organic light emitting display device using the opposite target type sputtering device of the present invention.

Referring to FIG. 5, the pressure inside the chamber 110 of the counter target sputtering apparatus as shown in FIGS. 2A to 2C is maintained at 5 mTorr, and the ratio of argon gas and oxygen gas is 9/1. The organic electroluminescent display when the opposite sputtering targets 211 and 215 are formed of ITO and is supplied with a power between 100W and 300W to form an upper electrode 640 made of ITO of 1000 mW, a reverse bias is obtained. It can be seen that there is almost no leakage current in the region.

That is, when sputtering using an opposing target sputtering apparatus as shown in FIGS. 2A to 2C, damage to the thin film formed on the substrate S, in particular, the organic layer 630 including the light emitting layer is small. It can be seen.

On the other hand, in the embodiment of the present invention, the substrate (S) is located in the upper portion of the chamber interior space, the box-type sputtering target portion (200, 400, 500) is located on the lower side of the opposite target sputtering sputtering from the upper direction Although the apparatus has been described as an example, the substrate may be placed in a state substantially perpendicular to the ground, and the sputtering direction of the box-shaped sputtering target portion may be sputtered in a state perpendicular to the substrate.

As described above, according to the present invention, the present invention includes a box-shaped sputtering target portion formed in a box-shaped case in which a portion of the substrate direction is opened so as to face each other. A sputtering device for preventing damage to a film due to a substrate collision of particles having high energy and a method of manufacturing an organic light emitting display device using the same can be provided.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. I can understand that you can.

Claims (18)

A chamber portion having a chamber constituting a body and a substrate mounting portion for mounting a substrate; A box having a first target portion and a second target portion disposed at a predetermined distance with the sputtering targets provided to face each other, the first target portion and the second target portion, and a portion of which is opened toward the substrate mounting portion Opposite target sputtering device comprising at least one box-shaped sputtering target portion having a case of the form. The method of claim 1, The first target portion and the second target portion, respectively The target body, A target plate supported by the target body to mount a sputtering target; A yoke disposed on a rear surface of the target plate, Opposite target sputtering device, characterized in that it comprises a magnetic field generating means disposed inside the target body. The method of claim 2, A counter-target sputtering device, characterized in that the length of the magnetic field generating means is 4.5 cm or more. The method of claim 3, wherein A counter-target sputtering device, characterized in that the length of the magnetic field generating means is 6 cm or more. The method of claim 2, The yoke is a counter-target sputtering device, characterized in that made of ferromagnetic or paramagnetic. The method of claim 5, The yoke is opposed target type sputtering apparatus, characterized in that made of a ferromagnetic material. The method of claim 6, The ferromagnetic material is any one of iron, cobalt, nickel and alloys thereof. The method of claim 2, And the first target portion and the second target portion further comprise cooling means for cooling the magnetic field generating means. The method of claim 2, And the first target portion and the second target portion further comprise sputtering gas supply means for supplying a sputtering gas. The method of claim 9, And the pressure of the sputtering gas between the first target portion and the second target portion is 0.1 mTorr to 100 mTorr. The method of claim 1, And the first target portion and the second target portion are connected to the case via hinge means. The method of claim 1, And the sputtering target portion further comprises a foreign material removing means on the bottom surface of the case. The method of claim 1, Opposite target sputtering apparatus, characterized in that the inner wall of the chamber further comprises a barrier plate for preventing contamination of the chamber. The method of claim 1, And the substrate is maintained at 200 ° C. or less. The method of claim 14, And the substrate is maintained at 40 ° C. or lower. Forming a lower electrode on the substrate; Forming a pixel defining layer having an opening exposing a portion of the lower electrode; Forming an organic layer having at least a light emitting layer on the pixel defining layer; A method of manufacturing an organic light emitting display device, comprising: forming an upper electrode on the organic layer using an opposite target type sputtering device according to any one of claims 1 to 15. The method of claim 16, The sputtering pressure of the sputtering device is a manufacturing method of an organic light emitting display device, characterized in that 0.1mTorr to 100mTorr. The method of claim 16, And forming a protective film for protecting the upper electrode and the organic layer on the upper electrode.

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