KR20200031212A - Facing targets sputtering apparatus - Google Patents

Abstract

Disclosed is a sputtering apparatus for targets facing each other, which can control a consumption amount of targets and improve uniformity of a deposited thin film. The sputtering apparatus for targets facing each other comprises a chamber, a substrate mounting unit, a gas supply unit, a first magnet unit, a second magnet unit, and a vacuum pump. The substrate mounting unit is arranged in the chamber to mount an object to be deposited. The gas supply unit supplies gas into the chamber. The first magnet unit and the second magnet unit are arranged in the chamber and are arranged on the rear surfaces of a first target and a second target, respectively. The vacuum pump discharges gas from the inside of the chamber. The first magnet unit and the second magnet unit are arranged to allow opposite polarities to face each other. Each of the first magnet unit and the second magnet unit is formed with one or more magnets and has or is arranged to have an I-shaped end.

Description

Counter targeted sputtering device {FACING TARGETS SPUTTERING APPARATUS}

The present invention relates to a counter-targeted sputtering device, and more particularly, to a high-efficiency counter-targeted sputtering device with improved cathode internal magnetic field.

Sputtering (hereinafter referred to as 'sputtering') is a typical technique for growing a thin film on the surface of an object (hereinafter referred to as 'substrate' for convenience of description). In this technique, the gas accelerated by the electric energy of the deposition material (hereinafter referred to as the 'target') and the restrained magnetic field (hereinafter referred to as 'the magnetic flux generated on the surface by a permanent magnet mounted in the cathode' is referred to as 'constrained magnetic field') As a method of depositing target particles emitted from a surface by colliding ions onto a substrate, it has been widely applied and used in various industrial fields including semiconductors and displays. For thin film growth using sputtering, controlling the particle motion inside the plasma formed around the Cathode (hereinafter referred to as “cathode” for all parts connecting the target and the power supply) is a key technology. To this end, by controlling the permanent magnet mounted inside the cathode, the potential energy of the cathode electrode is lowered to control the collision energy of the particles, thereby enabling thin film growth control.

In a general sputtering structure, a cathode and a target mounted thereon are arranged parallel to the substrate. Due to this structure, there is an inevitable problem of damage due to collision of high energy sputter particles generated from the cathode and the target with the substrate and the film deposited thereon. In order to solve this problem, a facing targets sputtering device having a structure in which two cathodes and targets face each other and the substrate is located from the center to the outside has been proposed. The magnetic field in the proposed device is generated in the vertical direction between the targets, thereby constraining plasma generated during sputtering to prevent loss of electrons diffused outside.

The type mounted inside the cathode of the opposing target type sputtering device that has been developed or used to date has a form facing different polarities (N-pole <-> S-pole). The shape of the magnet mounted inside is the shape of the magnet mounted inside the cathode of a general magnetron sputtering device, which is similar to that in Figs. 1 and 2, and modified to face the image and use different polarities. Therefore, the consumption of the target is similar to that of a general magnetron sputtering device, so that the usage remains at 30% of the total targets. Also, since two targets are used, controlling the consumption of the target is most important.

In addition, efforts have been made to homogenize the film by uniformly forming the plasma.

Republic of Korea Patent Publication 10-2008-0012620

Accordingly, the problem to be solved by the present invention is to provide an opposing target-type sputtering apparatus capable of uniformly controlling the consumption of the target and improving the uniformity of the deposited thin film.

The counter target sputtering apparatus according to an exemplary embodiment of the present invention for solving this problem includes a chamber, a substrate mounting unit, a gas supply unit, a first magnet unit, a second magnet unit, and a vacuum pump. The substrate mounting portion is disposed inside the chamber to mount an object to be deposited. The gas supply unit supplies gas into the chamber. The first magnet portion and the second magnet portion are disposed inside the chamber, and each is disposed on the rear surface of the first target and the second target. The vacuum pump discharges gas inside the chamber. At this time, the first magnet portion and the second magnet portion are disposed so as to face opposite polarities to each other, each of which is formed of one or more magnets, and ends are arranged to have or have an 'I' shape.

On the other hand, the substrate mounting portion of the opposing target type sputtering apparatus according to an exemplary embodiment of the present invention may be configured to reciprocate between the first magnet portion and the second magnet portion.

For example, the opposing target-type sputtering apparatus according to an exemplary embodiment of the present invention may further include a first shield portion and a second shield portion covering the first magnet portion and the second magnet portion, respectively.

In addition, the opposing-target sputtering apparatus according to an exemplary embodiment of the present invention further includes a power supply unit, wherein the first magnet unit and the second magnet unit are the cathode of the power supply unit, the first target, and the second magnet unit, respectively. Arranged between targets, the anode of the power source may be grounded and connected to the substrate mounting portion.

Meanwhile, the first magnet part and the second magnet part may be formed to be smaller than the first target and the second target, respectively.

In this way, the opposing target-type sputtering apparatus according to the present invention, by configuring the magnet to have an I-shaped cross-section, can uniformly control the consumption of the target and improve the uniformity of the deposited thin film.

In addition, when the substrate mounting portion reciprocates between the first magnet portion and the second magnet portion, the uniformity of the film deposited on the deposit attached to the substrate mounting portion can be further improved.

In addition, when the first and second magnetic shield portions respectively covering the first magnet portion and the second magnet portion are included, contamination of the first magnet portion and the second magnet portion can be prevented. In addition, sputtering is generated only on the surfaces where the first and second targets face each other, and the first shielding part and the second shielding part can be protected from sputtering in other regions.

Fig. 1 is a schematic side sectional view of an opposing target type sputtering apparatus according to an exemplary embodiment of the present invention.
FIG. 2 is a plan view showing an 'I'-shaped magnet arrangement of the magnets of the first magnet portion or the second magnet portion shown in FIG. 1.
Figure 3 is a first arrangement of the magnets of the first magnet portion or the second magnet portion according to the first comparative example for comparison with the 'I' shaped magnet arrangement of the first magnet portion and the second magnet portion of the present invention shown in FIG. It is a plan view showing.
4 is a 'wh' of the magnets of the first magnet part or the second magnet part according to the first comparative example for comparing the 'I'-shaped magnet arrangement of the first magnet part and the second magnet part of the present invention shown in FIG. It is a top view showing a magnet array.
FIG. 5 is a photograph of a target before and after driving the opposing target type sputtering apparatus employing the 'I' shaped magnet array of the first magnet part and the second magnet part of the present invention shown in FIG. 2.
FIG. 6 is a photograph of a target after driving an opposing target type sputtering device employing a 'W' shaped magnet array of magnets of the first magnet part or the second magnet part shown in FIG. 4.
7 is a photograph of a glass substrate on which ITO is deposited through an opposing target type sputtering apparatus according to an exemplary embodiment of the present invention.
8 is a magnetic flux density generated between the first magnet portion and the second magnet portion having the arrangement of FIGS. 2 (I-shaped), 3 (date-shaped), and 4 (ㅁ -shaped); It is a graph shown corresponding to each position shown in 7.
Fig. 9 shows the thickness of the film formed by the opposing target type sputtering device employing the first magnet portion and the second magnet portion having the arrangements of Fig. 2 (I-shaped), Fig. 3 (date-shaped) and Fig. 4 (W-shaped), It is a graph corresponding to each position shown in FIG. 7.

The present invention can be applied to various changes and may have various forms, and specific embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosure form, and it should be understood that all modifications, equivalents, and substitutes included in the spirit and scope of the present invention are included. In describing each drawing, similar reference numerals are used for similar components. In the accompanying drawings, the dimensions of the structures may be exaggerated than actual in order to clarify the present invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from other components. For example, the first component may be referred to as a second component without departing from the scope of the present invention, and similarly, the second component may also be referred to as a first component.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "include" or "have" are intended to indicate the presence of a feature, number, step, action, component, part, or combination thereof described in the specification, one or more other features or It should be understood that the existence or addition possibilities of numbers, steps, actions, components, parts or combinations thereof are not excluded in advance. Also, A and B means 'connected' and 'joined', in addition to A and B being directly connected or joined, other components C are included between A and B so that A and B are connected or joined. It includes things.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the present invention pertains. Terms such as those defined in a commonly used dictionary should be interpreted as having meanings consistent with meanings in the context of related technologies, and should not be interpreted as ideal or excessively formal meanings unless explicitly defined in the present application. Does not. In addition, in the claims of a method invention, unless each step is clearly bound to the order, the order of each step may be reversed.

Hereinafter, a method of manufacturing the negative replica mold will be described in more detail with reference to the drawings.

Fig. 1 is a schematic side sectional view of an opposing target type sputtering apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the opposing target-type sputtering apparatus 100 according to an exemplary embodiment of the present invention includes a chamber 110, a substrate mounting unit 120, a gas supply unit 130, and a first magnet unit 140, It includes a second magnet unit 150 and the vacuum pump 160. In addition, the opposing target type sputtering apparatus 100 according to an exemplary embodiment of the present invention further includes a power supply unit 190.

The chamber 110 may be grounded. The shape of the chamber 110 is not particularly limited. In addition, the anode of the power supply unit 190 may be grounded and connected to the substrate mounting unit 120.

The substrate mounting unit 120 is disposed inside the chamber 110 to mount an object (or substrate, S) to be deposited. On the other hand, the substrate mounting portion 120 of the opposing target type sputtering apparatus according to an exemplary embodiment of the present invention is configured to be reciprocated between the first magnet portion 140 and the second magnet portion 150 You can. As described above, when the substrate mounting unit 120 reciprocates between the first magnet unit 140 and the second magnet unit 150, the film deposited on the deposit S mounted on the substrate mounting unit 120 Uniformity can be improved.

Although not shown, the substrate mounting unit 120 may further include a temperature control means (not shown). The temperature control means (not shown) maintains the temperature of the deposit S during film formation according to the film formation conditions. For example, the temperature control means (not shown) may be achieved by filling a heating wire inside the substrate mounting portion 120 or forming a flow path of a refrigerant.

The gas supply unit 130 supplies gas into the chamber 110. For example, the gas supply unit 130 may be disposed to face the substrate mounting unit 120. The gas supply unit 130 may supply an inert gas such as argon (Ar) gas or various gases required for deposition to the inside of the chamber 110 to perform stable and efficient plasma generation during the sputtering process. In addition, the gas supply unit 130 is disposed to face the substrate mounting unit 120, so that plasma ions, atoms, and gases inside the chamber 110 can easily flow in the direction of the deposit 20 have.

The first magnet unit 140 and the second magnet unit 150 are disposed so as to face opposite polarities, each of which is formed of one or more magnets, and the ends are arranged to have or have an 'I' shape. . That is, the first magnet unit 140 and the second magnet unit 150 may be composed of a single magnet having an I-shaped cross-section, and configured to have an I-shaped end by attaching a plurality of magnets. You may.

The first magnet unit 140 and the second magnet unit 150 may be made of a material having magnetic properties, including NdFeB, for example. The first magnet unit 140 and the second magnet unit 150 are disposed inside the chamber 110, and each of the first magnet unit 140 and the second target unit T2 is disposed on the rear surface of the first target T1 and the second target T2. In addition, the first magnet unit 140 and the second magnet unit 150 are disposed between the cathode of the power supply unit 190 and the first target T1 and the second target T2, respectively. In more detail, the first magnet unit 140 and the second magnet unit 150 are conductive plates (for example, Cu plates) and the first target T1 and the second connected to the cathode of the power supply unit 190, respectively. It is arranged between the targets T2.

At this time, the first magnet unit 140 and the second magnet unit 150 may be formed to be smaller than the first target T1 and the second target T2, respectively.

The first target T1 and the second target T2 are materials to be deposited on the deposit, and the first target T1 and the second target T2 are made of the same material or different materials. Can be configured. In an exemplary embodiment of the present invention, the first target T1 and the second target T2 are made of a transparent conductive material such as ITO, AZO, IZO, or a metallic material such as Cu, Ti, and Ag. Can be.

The vacuum pump 160 discharges the gas inside the chamber 110 to maintain the inside of the chamber 110 in a vacuum during the process. For example, the interior of the chamber 110 can maintain a pressure between 0.1 mTorr and 100 mTorr.

On the other hand, the opposing target-type sputtering apparatus 100 according to an exemplary embodiment of the present invention, the first shield unit 170 covering the first magnet unit 140 and the second magnet unit 150, respectively And a second shield part 180. The first shield part 170 and the second shield part 180 expose only the surfaces facing the first target T1 and the second target T2, respectively, and the side surface and the first magnet part 140 ) And the side surfaces of the second magnet unit 150.

As described above, the opposing target-type sputtering apparatus 100 includes a first shield part 170 and a second shield part 180 covering the first magnet part 140 and the second magnet part 150, respectively. In this case, contamination of the first magnet unit 140 and the second magnet unit 150 may be prevented. In addition, sputtering is generated only in the surface of the first shield unit 170 and the second shield unit 180 where the first target T1 and the second target T2 face each other, and in other regions. This can be prevented from happening. Therefore, maintenance is easy.

FIG. 2 is a plan view showing an 'I' shaped magnet arrangement of the magnets of the first magnet part or the second magnet part shown in FIG. 1, and FIG. 3 is a first magnet part and a second magnet of the present invention shown in FIG. 2. It is a plan view showing the arrangement of the straight lines of the magnets of the first magnet part or the second magnet part according to the first comparative example for comparison with a negative 'I' shaped magnet array, and FIG. 4 is a first view of the present invention shown in FIG. 2. It is a plan view showing a 'ㅁ' -shaped magnet arrangement of magnets of the first magnet portion or the second magnet portion according to the first comparative example for comparison with the 'I'-shaped magnet arrangement of the magnet portion and the second magnet portion.

2 to 4, it is not formed of a single magnet, but as shown, it is configured by arranging a plurality of magnets having a square cross section.

In FIG. 2, three magnets are arranged on the upper and lower sides along the short axis direction of the target, and seven magnets are arranged along the long axis of the center to have an 'I' shape as a whole.

In FIG. 3, three are arranged along the short axis direction of the target, three along the long axis direction, and in a total 9x3 matrix shape, and arranged to have a straight shape.

In addition, in Fig. 4, as an arrangement of a conventional magnet, along the rim, it is arranged in a 'ㅁ' shape, and an additional magnet is arranged in the center. Hereinafter, for convenience, it will be referred to as a 'ㅁ' character arrangement.

FIG. 5 is a photograph of a target before and after driving an opposing target type sputtering apparatus employing an 'I' shaped magnet array of the first magnet part and the second magnet part of the present invention shown in FIG. 2, and FIG. 6 is a view of FIG. 4 It is a photograph of the target after driving the opposing target type sputtering device employing the 'ㅁ' shaped magnet arrangement of the magnets of the first magnet part or the second magnet part.

5 and 6, in the case of the 'I'-shaped magnet array according to the present invention, the target was used evenly (FIG. 5), but in the case of the conventional' ㅁ '-shaped magnet array, a specific portion of the target is intensively You can see what was used.

Fig. 7 is a photograph of a glass substrate on which ITO is deposited through an opposing target type sputtering apparatus according to an exemplary embodiment of the present invention.

As shown in FIG. 7, for the experiment, ITO was deposited on a glass substrate having a width of 200 mm and a length of 200 mm, and the separation distance between the first target T1 and the second target T2 was 100 mm and the first target under the deposition conditions of the thin film. The space between the substrates from the center of the T1 and the second target T2 is maintained at 130 mm, and argon and oxygen are injected through the gas supply unit 130 to maintain the inside of the chamber at 1 mTorr, and the power of the power supply is 700 W. It was fixed, and deposition was performed at room temperature on a Soda-lime substrate using an ITO target.

8 is a magnetic flux density generated between the first magnet portion and the second magnet portion having the arrangement of FIGS. 2 (I-shaped), 3 (date-shaped), and 4 (ㅁ -shaped); It is a graph shown corresponding to each position shown in 7.

The magnetic flux density in FIG. 8 is a result of measuring the magnetic flux using a Gauss meter after mounting the target. Referring to FIG. 8, it can be seen that in the central portion, the straight-line arrangement has the highest magnetic flux, but the straight-line arrangement decreases the magnetic flux density by 50% or more toward the end. In contrast, the 'I' arrangement, which is an embodiment of the present invention, does not have a higher magnetic flux density in the central portion than the 'Date' arrangement, but it can be seen that it is much superior in terms of uniformity, and has a magnetic flux density compared to a conventional 'ㅁ' arrangement. You can see that it is high.

FIG. 9 shows the thickness of the film formed by an opposing target type sputtering device employing a first magnet portion and a second magnet portion having the arrangement of FIGS. 2 (I-shaped), 3 (date-shaped), and 4 (W-shaped), It is a graph corresponding to each position shown in FIG. 7.

Referring to FIG. 9, using the process conditions described in FIG. 7, the arrangement of the first magnet unit 140 and the second magnet unit 150 is illustrated in FIG. 2 as an 'I' magnet array, shown in FIG. 3 The dated magnet array was changed to the 'ㅁ' magnet array shown in FIG. 4, and ITO film formation was performed. In addition, during the deposition, the substrate mounting unit 120 was formed while reciprocating between the first magnet unit 140 and the second magnet unit 150.

Looking at the film thickness, it can be seen that the 'I'-shaped magnet array of the present invention has an improved uniformity of the film thickness compared to a straight-line array or a conventional' ㅁ '-shaped array.

As described above, the opposing target-type sputtering apparatus according to the present invention, by configuring the magnet to have an I-shaped cross-section, can uniformly control the consumption of the target and improve the uniformity of the deposited thin film. .

In the detailed description of the present invention described above, it has been described with reference to preferred embodiments of the present invention, but those skilled in the art or those skilled in the art will appreciate the spirit of the present invention as set forth in the claims below. And it will be understood that various modifications and changes can be made to the present invention without departing from the technical scope.

100: opposing target type sputtering device
110: chamber 120: substrate mounting portion
130: gas supply unit 140: first magnet unit
150: second magnet unit 160: vacuum pump
170: first shield portion 180: second shield portion
190: power supply
S: Deposited substance (substrate)
T1: first target T2: second target

Claims (5)

chamber;
A substrate mounting unit disposed inside the chamber to mount an object to be deposited;
A gas supply unit supplying gas into the chamber;
A first magnet part and a second magnet part disposed inside the chamber, each disposed on the rear surfaces of the first target and the second target; And
A vacuum pump that discharges gas inside the chamber;
Including,
The first magnet portion and the second magnet portion are disposed to face opposite polarities to each other, each of which is formed of one or more magnets, and an opposite target type, characterized in that the ends have or have an 'I' shape Sputtering device.
According to claim 1,
The substrate mounting portion is configured to be reciprocating between the first magnet portion and the second magnet portion, the opposite target type sputtering device.
According to claim 1,
And a first shielding part and a second shielding part respectively covering the first magnet part and the second magnet part.
According to claim 1,
Further comprising a power supply unit, the first magnet unit and the second magnet unit are disposed between the cathode of the power supply unit and the first target and the second target, respectively, and the anode of the power supply unit is grounded to be connected to the substrate mounting unit A counter target type sputtering device characterized by the above-mentioned.
According to claim 1,
The first magnet portion and the second magnet portion are each a target target sputtering device, characterized in that smaller than the first target and the second target.

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