KR100909428B1 - Ion Beam Assisted Electron Beam Multilayer Film Deposition System - Google Patents

Abstract

The present invention relates to an ion beam assisted electron beam multilayer film deposition apparatus, comprising: a vacuum chamber, a deposit support for supporting a deposit, an electron beam source provided below the deposit, a deposition material for emitting deposition particles by an electron beam of the electron beam source, and A multi-layer film deposition apparatus having an ion beam source that emits ion beams to transfer energy to deposited particles emitted from a deposition material. In order to prevent degradation, the height of the vacuum chamber is reduced, the position of the electron beam source is maintained at a distance of 280 to 320 mm from the outer wall to the inside, and the ion beam source is installed at a position of 180 to 220 mm from the center line of the vacuum chamber, respectively. The inner diameter of the chamber is manufactured to 1650 ~ 2050㎜ but the ratio of the inner diameter to the height of the vacuum chamber is 1: 0.75 ~ 0.85 enables the deposition of large sheets as well as greatly improves the productivity of the deposited products, and improves the uniformity and reproducibility of the products to ensure the stability of the deposition process. There is an effect that can be enlarged.

Evaporation apparatus, multilayer film, vacuum chamber, electron beam, ion beam

Description

The deposition device of multi-layer film using an electron beam as the secondary ion beam}

The present invention relates to a deposition apparatus, and more particularly, by combining the advantages of resistive heating deposition and sputter deposition through ion beam assisted deposition to increase the density of the deposited thin film and improve the adhesion to maximize the productivity and yield of the product The present invention relates to a multifunctional ion beam assisted electron beam multilayer film deposition apparatus.

In general, a deposition apparatus is a device for forming a deposition film on a deposit such as a semiconductor substrate, and is classified into a physical vapor deposition method and a chemical vapor deposition method according to the deposition method.

Among these classifications, the physical vapor deposition method may be classified into a sputtering method and a vacuum deposition method as a method of colliding particles having high energy on the deposition material to deposit the deposited particles from the deposition material and depositing the deposited material on the deposition material. In addition, during the vacuum deposition method, an ion beam assisted deposition method in which an ion beam source for generating an ion beam is generated and used to transfer energy to the deposited particles is developed and used.

Referring to FIG. 1, which schematically illustrates a deposition apparatus using a conventional sputtering method, the conventional sputtering deposition apparatus 100 includes a sputter chamber 110 and a deposition support 111 supporting the deposit 105. And a target 115, which is a deposition material that emits deposition particles, and a sputter source that supports the target 115 and forms plasma around the target 115 to release the deposition particles from the target 115. 117).

The sputter chamber 110 is vacuumed to have a degree of vacuum of about 0.001 tor to about 0.01 tor by the vacuum pump 113, and is mainly filled with argon (Ar) gas to generate a plasma. The sputter source 117 is provided with a magnet or the like to form a plasma near the target 115, and applies a negative voltage to the target 115.

In the conventional sputtering deposition apparatus 100 as described above, when a negative voltage is applied to the target 115, a plasma is formed in the vicinity of the target 115 such that ions having positive charges in the plasma are targeted. And impingement on the surface of 115, and deposited particles having energy of tens to hundreds of electron volts (eV) are sputtered and deposited on the deposit.

However, in the conventional sputtering deposition apparatus, since the energy of the sputtered deposition particles is about tens to several hundred eV, it is difficult to form a mixing layer between the deposit and the deposited film, so that it is easy to improve the adhesion between the deposit and the deposited film. Since there is not a problem, there is a need for a deposition apparatus having advantages of conventional anion assisted deposition apparatus and sputtering deposition apparatus. However, since the chambers installed in the conventional anion assisted deposition apparatus and the sputtering deposition apparatus have different degrees of vacuum, there is a problem that various technical difficulties must be overcome in order to combine them.

In addition, in the conventional vapor deposition apparatus of the chemical vapor deposition method, the electron beam emitted from the electron gun strikes the source by the deflection means and vaporizes by spot heating so that the vapor of the vaporized source is attached to the substrate, which is a deposit, to form a film. That is, to be deposited.

However, the continuous supply of the source is required for continuous control of the deposition apparatus such as continuous feeding and deposition of the substrate. Accordingly, the crucible is configured as a ring-type container and rotated like a turn table. On the other hand, a vapor deposition apparatus having a configuration in which granular sources are continuously supplied to allow a plurality of sources to be sequentially input to vapor deposition is generally used.

This type of deposition apparatus is effective to reduce the temperature variation in the deposition atmosphere, and the sources used for the actual deposition are spot sources using only the sources of the site where the electron beam is landed. In the case of a small size or less, there is no problem. However, in recent years, as the substrate to be deposited is enlarged due to the trend of larger size of the flat panel display device, it is difficult to uniformly deposit a large substrate with such a point source.

In order to solve this problem, an ion beam assisted deposition apparatus using an ion beam is used, and referring to FIG. 2 which schematically illustrates such a conventional ion beam assisted deposition apparatus, the ion beam assisted deposition apparatus 200 is a vacuum chamber ( 210, a deposit support 211 for supporting the deposit 205, and a lower portion of the deposit 205, which emits deposition particles by an electron beam generated by an electron beam source 217. A deposition material 215 and an ion beam source 227 that emits an ion beam to transfer energy to the deposited particles emitted from the deposition material 215.

The vacuum chamber 210 is vacuumed to have a degree of vacuum of about 0.0001 torr by the vacuum pump 213. The ion beam source 227 is mainly supplied with argon (Ar) gas to generate an ion beam having a high energy.

The conventional ion beam assisted deposition apparatus 200 as described above may deposit the deposition particles emitted from the deposition material 215 by the electron beam onto the deposit 205. At this time, by adhering the ion beam having high energy from the ion beam source 227 to the deposition particles, a mixing layer is formed between the deposit 205 and the deposited film to form an adhesion force of the deposited film deposited on the deposit 205. Can improve.

However, the conventional ion beam assisted deposition apparatus as described above is configured to emit deposition particles from the deposition material by the electron beam generated in the electron beam source, so that the consumption of the deposition material is considerably large, and when such deposition material is an expensive metal, There is a problem of increased cost.

In addition, in the conventional ion beam assisted deposition apparatus as described above, since the vacuum chamber is designed to the extent that most of the conventional film can be deposited on a small sheet (sheet), the large sheet according to the recent trend of larger products ( When deposition on sheets is required, it is difficult to use, and conventional ion beam assisted deposition apparatus has high productivity due to low productivity and uniformity and reproducibility of large sheet deposits. there was.

The present invention has been devised in view of the above-mentioned problems, and the large size of the vacuum chamber of the deposition apparatus for mounting a large sheet is changed, but the structure of the vacuum chamber is changed and the installation position of the electron beam source and the ion beam source is optimized. An object of the present invention is to provide an ion beam assisted electron beam multilayer film deposition apparatus capable of improving the productivity of the deposit, the uniformity and reproducibility of the product, and ensuring the stabilization of the deposition process.

The ion beam assisted electron beam multilayer film deposition apparatus according to the present invention includes a vacuum chamber, an evaporation support for supporting an evaporation object, an electron beam source provided under the evaporation object, and a deposition material and evaporation material for emitting deposition particles by an electron beam of an electron beam source. A multi-layer film deposition apparatus having an ion beam source that emits ion beams to transfer energy to deposited particles emitted from a material, wherein the inner diameter of the vacuum chamber is enlarged, but the argon gas discharge rate is decreased after the operation due to an increase in the volume inside the vacuum chamber. In order to prevent the height of the vacuum chamber is reduced, the position of the electron beam source is to be maintained at a distance of 280 ~ 320mm inward from the outer wall, the ion beam source is installed at a position of 180 ~ 220mm spaced from the center line of the vacuum chamber, respectively.

In addition, the inner diameter of the vacuum chamber is produced in 1650 ~ 2050mm, the inner diameter (φ) to height (h) of the vacuum chamber is produced in a ratio of 1: 0.75 to 0.85.

The present invention is to enlarge the vacuum chamber of the deposition apparatus, but by changing the structure of the vacuum chamber and optimizing the installation position of the electron beam source and the ion beam source, it is possible to install a large sheet (sheet) product to deposit the deposition product Not only can the productivity be greatly improved, but also the uniformity and reproducibility of the product can be improved to ensure the stability of the deposition process, thereby lowering the deposition cost of the product and expanding the application field of the deposition.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

3 is a schematic diagram of one end surface for explaining an ion beam assisted electron beam multilayer film deposition apparatus according to the present invention.

As shown in FIG. 3, the ion beam assisted electron beam multilayer film deposition apparatus 300 according to the present invention includes a vacuum chamber 310, a deposit support 311 for supporting the deposit 305, and the deposit 305. An electron beam source 317 installed underneath and an ion beam source 327 that emits an ion beam to transfer energy to the deposited material that emits the deposited particles by the electron beam of the electron beam source 317 and the deposited particles emitted from the deposited material. The inner diameter (φ) of the vacuum chamber 310 is made to be expanded to 1650 to 2050 mm, but due to the increase in the volume inside the vacuum chamber 310, the reduction of the argon gas discharge rate in the vacuum chamber after the operation is completed. In order to prevent the height (h) of the vacuum chamber to reduce the inner diameter (phi) to height (h) of the vacuum chamber 310 is produced in a ratio of 1: 0.75 ~ 0.85.

In addition, the electron beam source 317 is installed at a position where a space b of 280 to 320 mm is maintained inward from the outer wall, and the ion beam source 327 is a distance of 180 to 220 mm from the centerline of the vacuum chamber 310. It is installed at the position where) is maintained to ensure uniformity and reproducibility of deposit and stability of deposition process.

In the case of forming a thin film using the point deposition material of the electron beam source 317, the thickness distribution of the laminated film is thickest just above the point deposition material and becomes thinner toward the edge. This thickness distribution is known to have a cosine function distribution proposed by L. Holland and W. Steckelmacher, etc., and in the case of using a point deposition material, the thickness of the point deposition material and the anisotropy of the evaporated material depending on the evaporation conditions are known. Since the deposition rate and the form of deposition vary according to the present invention, it is possible to estimate the thickness and deposition efficiency of the deposited thin film by the shape of the point deposition material and the evaporation conditions. The anisotropy degree of the evaporated material can be obtained by measuring the thickness distribution of the thin film deposited from the point deposition material experimentally.

In the ion beam assisted electron beam multilayer film deposition apparatus, when the degree of anisotropy of the evaporation material and the location of the deposition source are known, the thickness at the deposition surface of the deposit is expressed as a cosine function, and in the case of a large-area substrate, In order to obtain the thickness uniformity of the thin film in the substrate, the height and distance from the center of the substrate to be deposited and the deposition material must be very large, compared to the case of using the second generation substrate. This means that the point deposits should be very far from the deposit and move outwards from the center of the deposit. In this case, thickness uniformity can be ensured, but the deposition rate and the deposition efficiency of the material are further lowered. As a method for overcoming the low deposition efficiency of the material, a method of increasing the deposition efficiency of the material may be provided by placing the deposition material closer to the substrate to be deposited.

In addition, when the point deposition material of the electron beam source is used, the area capable of securing the thickness uniformity of the deposited thin film is very limited. In the case of using point evaporation materials, the thickness uniformity required for, for example, OLED devices, can be obtained in second generation glass, but the use efficiency of the material is relatively very poor in this case. Since most materials are deposited outside the substrate, the expected use efficiency of the material is about 5%. In order to increase this low deposition efficiency, it may be possible to improve the design of the point deposition material to increase the degree of anisotropy of the evaporated material, but this is also less than 10%. Using a point deposition source in a large area substrate shows less than 10% deposition efficiency, but reducing the distance between the large area substrate and the deposition source can improve the deposition efficiency.

In the present invention, by reducing the height (h) of the vacuum chamber through various iterative experiments and computer simulations, the inner diameter (φ) to height (h) of the vacuum chamber is designed at a ratio of 1: 0.75 to 0.85. It has been confirmed that the optimum state, and the electron beam source is in the position where the interval (b) of 280 ~ 320mm is maintained inward from the outer wall, the ion beam source is the position where the interval (a) of 180 ~ 220mm from the center line of the vacuum chamber is maintained Each installation was found to be optimal for the uniformity of the deposit on the large sheet, the reproducibility of the product and the stability of the deposition process.

Table 1 below shows the mounting quantity and the production quantity of the deposits according to the inner diameter and the jig size of the vacuum chamber of the deposition apparatus using the ion beam assisted electron beam multilayer film deposition apparatus manufactured according to the present invention.

 Mounting quantity (per 1 charge)  Production (per hour)  Daily output  Remarks  1650φ  1850φ  2050φ  1650φ  1850φ  2050φ  1650φ  1850φ  2050φ Both sides Product, JIG Size 200 × 275  32  40  48  38.4  43.6  48  768  872  960  both sides  250 × 350  36  36  720  both sides  275 × 350  16  20  24  19.2  21.8  24  84  436  480  both sides  300 × 390  14  18  22  16.8  19.6  22  336  392  440  both sides  300 × 400  14  18  22  16.8  19.6  22  336  392  440  both sides  345 × 440  12  14  18  14.4  15.2  18  288  304  360  both sides  365 × 400  12  14  18  14.4  15.2  18  288  304  360  both sides  400 × 500  6  10  14  7.2  10.9  14  144  218  280  both sides  400 × 550  5  6  8  10  11.2  13.5  200  224  270  section

The production amount shown in [Table 1] is calculated based on the production standard of 20 hours excluding 4 hours such as equipment maintenance and non-working time of 24 hours per day, and the vacuum chamber production of 1650φ inner diameter is made based on the actual production standard. Data, the 1850φ inner diameter vacuum chamber yield was calculated in consideration of the actual site standards and the volume inside the vacuum chamber, the 2050φ inner diameter vacuum chamber yield was calculated in consideration of the basic data used in the actual production site in consideration of the existing data and volume It is calculated.

The production standard is calculated by applying accurate management standards for the equipment management status, raw material management status, manpower management status. Looking at the amount of deposits and the hourly or daily output of the product by jig size of the product, if the inner diameter of the vacuum chamber is large It can be seen that the larger the increase in the number and amount of deposition of the deposit by the jig size, the productivity is improved.

1 is a view schematically showing a conventional sputtering deposition apparatus.

Figure 2 schematically shows a conventional ion beam assisted deposition apparatus.

3 is a view showing an ion beam assisted electron beam multilayer film deposition apparatus according to the present invention.

<Description of the symbols for the main parts of the drawings>

100,200,300: vapor deposition apparatus 110,210,310: vacuum chamber

105,205,305: deposits 111,211,311: deposit support

115: target 215: deposition material

113,213 vacuum pump 227,327 ion beam source

117: sputter source 317: electron beam source

Claims (3)

From the vacuum chamber 310, the deposit support 311 supporting the deposit, the electron beam source 317 provided below the deposit, and the deposition material and the deposition material emitting the deposition particles by the electron beam of the electron beam source. In the multilayer film deposition apparatus having an ion beam source 327 for emitting an ion beam to transfer energy to the deposited deposition particles, The inner diameter φ of the vacuum chamber 310 is enlarged, but the height h of the vacuum chamber is reduced to prevent a decrease in argon gas discharge rate due to an increase in the volume inside the vacuum chamber, and the position of the electron beam source 317 is located on the outer wall. 280 ~ 320mm spacing (b) is maintained in the inside, and the ion beam source 327 is installed at a position of 180 ~ 220mm spacing (a) from the center line of the vacuum chamber, respectively to improve the uniformity and reproducibility of the deposit and the deposition process An ion beam assisted electron beam multilayer film deposition apparatus, characterized in that the stability of the. The ion beam assisted electron beam multilayer film deposition apparatus according to claim 1, wherein an inner diameter φ to a height h of the vacuum chamber 310 are manufactured at a ratio of 1: 0.75 to 0.85. The ion beam assisted electron beam multilayer film deposition apparatus according to claim 1 or 2, wherein the inner diameter (phi) of the vacuum chamber (310) is manufactured at 1650 to 2050 mm.

Images