CN108570642A - A kind of C film low temperature controllable deposition method and device - Google Patents
A kind of C film low temperature controllable deposition method and device Download PDFInfo
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- CN108570642A CN108570642A CN201810828339.9A CN201810828339A CN108570642A CN 108570642 A CN108570642 A CN 108570642A CN 201810828339 A CN201810828339 A CN 201810828339A CN 108570642 A CN108570642 A CN 108570642A
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- low temperature
- target
- water
- temperature controllable
- magnetron sputtering
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- 238000000151 deposition Methods 0.000 title claims abstract description 48
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 18
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000011230 binding agent Substances 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 150000004767 nitrides Chemical group 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 56
- 238000001816 cooling Methods 0.000 claims description 50
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 229910052786 argon Inorganic materials 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 239000000498 cooling water Substances 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 4
- 230000002000 scavenging effect Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 8
- 229910000831 Steel Inorganic materials 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 239000010959 steel Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical group 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
Abstract
A kind of C film low temperature controllable deposition method disclosed by the invention, includes the following steps：(1) vacuum step；(2) cleaning step；(3) high-power impulse magnetron sputtering column target deposits binder course step；(4) high-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step；(5) medium frequency magnetron sputtering assistant chemical vapor deposition step.The invention also discloses the devices for realizing the C film low temperature controllable deposition method.Method provided by the invention can effectively improve plated film rate, reduce depositing temperature, inhibits thermal accumlation, realize (130 DEG C) of low temperature deposition under batch plating conditions, be conducive to prepare keeping its mechanical performance not lose in thin-film process in bearing steel surface.
Description
Technical field
The present invention relates to film deposition and surfacecti proteon field, more particularly to a kind of C film low temperature controllable deposition method and
Device.
Background technology
Diesel engine high-pressure co-rail system be diesel energy conservation and emissions reduction preferably one of, high performance high-pressure common-rail injection system
20% or more fuel-economizing may be implemented.
But the 90% of China common rail market is monopolized by Bosch, Delphi and Denso；National enterprise faces Predicament of Development.Study carefully
Its reason is primarily due to requirement of the co-rail oil injection system because of high pressure, and couple fit clearance is less than 2.5 microns, and speed is higher than
5000 turns/min, the abrasion pressure release thus brought and friction welding problem become and restrict China's independent brand high pressure co-rail system
The bottleneck problem of development.
High pressure common rail injector key couple spindle and high-pressure plunger pump plunger (piston) are the main seals of common rail system
The performance of couple, abrasion and Life Relation to common rail system.
External such as Bosch, Denso have used high performance carbon-base film, solve the problems, such as friction pressure release and friction welding.
For the needs of technology competition, foreign countries bottle up this technology, and therefore, China is badly in need of breaking through in plunger, spindle etc.
The low friction C film batch deposition of critical component.
Scientific research institution of China and university are in the various types of C films of development in laboratory, but in batch production side
Face, because laboratory process research and development and coating machine design are prepared and disconnected, still without mass production.Although Partial coatings equipment vendor
Carbon-base film technique oneself is developed, but because improving the demand of binding force, often uses high bias or arc ion plating,
Depositing temperature is higher than 200 degree, limits its sizable application.The parts such as plunger, spindle are mostly bearing steel class, and temperature is usual
For 160 or 180 degree preparation process cannot be arbitrarily changed because of the requirement of industrial chain flow.
In view of the above-mentioned problems, need to develop new preparation technology in low temperature, solve low friction C film in common rail, start organ
The batch application problem of key couple.
Invention content
The first technical problem to be solved by the present invention be the situation mainly for current preparation technology in low temperature blank and
It is proposed a kind of C film low temperature controllable deposition method.
The second technical problem to be solved by the present invention be the situation mainly for current preparation technology in low temperature blank and
It is proposed a kind of C film low temperature controllable deposition device.
As a kind of C film low temperature controllable deposition method of first aspect present invention, include the following steps：
(1) vacuum step；
(2) cleaning step；
(3) high-power impulse magnetron sputtering column target deposits binder course step；
(4) high-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step；
(5) medium frequency magnetron sputtering assistant chemical vapor deposition step.
In a preferred embodiment of the invention, it is evacuated to 1.0x10 in the vacuum step-4Pa。
In a preferred embodiment of the invention, the cleaning step is specifically to open high power pulsed source, voltage
800V, pulse current 400A, bias 500V, anode 300V, scavenging period 15 minutes, argon gas 1Pa；
In a preferred embodiment of the invention, the high-power impulse magnetron sputtering column target deposition binder course step tool
Body is to reduce to be biased into 120V, anode 200V, argon gas 1Pa, nitrogen 0.15Pa；Deposition 120 minutes.
In a preferred embodiment of the invention, the high-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitrogen
Compound bearing bed step is specifically high power pulsed source, and voltage 600V, pulse current 300A are biased into 120V, anode 200V,
Argon gas 1Pa, nitrogen 0.15Pa, methane 0.30Pa, intermediate frequency graphite target power supply 10A are deposited 30 minutes.
In a preferred embodiment of the invention, the medium frequency magnetron sputtering assistant chemical vapor deposition step is specifically
High power pulsed source is closed, is biased into 120V, anode 200V, argon gas 1Pa, methane 0.40Pa, intermediate frequency graphite target power supply 10A,
Deposition 120 minutes.
As a kind of C film low temperature controllable deposition device of second aspect of the present invention, including Double water-cooled cavity and cover
Top cover on the Double water-cooled cavity, wherein the Double water-cooled cavity includes the rounded internal layer water cooling of a radial section
Cavity and the outer layer water cooling cavity annular in shape for being looped around the internal layer waterway body periphery；
The C film low temperature controllable deposition device further includes several magnetic control circles being arranged in the outer layer waterway body
Column target, one be arranged the internal layer water cooling cavity center central water-cooling cylindrical anode, one be arranged in the internal layer water cooling
Frock clamp in cavity and positioned at the central water-cooling cylindrical anode periphery；The magnetic control cylindrical target is divided into two groups, one group of magnetic
It controls cylindrical target to power using high power pulsed source, another group of magnetic control cylindrical target is powered using intermediate frequency power supply；The central water-cooling
Cylindrical anode uses medium-frequency pulse power supply power supply；The frock clamp is connect with the top cover；The Double water-cooled cavity is also
Vacuum system is connected with vacuum-pumping tube by vacuumizing joint, the Double water-cooled cavity also passes through gas-tpe fitting and tracheae respectively
Connect argon flow amount meter, nitrogen stream gauge and methane flow meter；The argon flow amount meter connects argon gas air source, the nitrogen flow
Meter connection Nitrogen source gases, the methane flow meter connect methane air source；
The C film low temperature controllable deposition device further includes in an industrial personal computer PLC controller and pair of lamina waterway body
Signal pickup assembly, the signal pickup assembly is acquiring the water cooling signal in the Double water-cooled cavity；The industrial personal computer
PLC controller is connect with the signal pickup assembly signal, the industrial personal computer PLC controller and the argon flow amount meter, described
Nitrogen stream gauge, the methane flow meter, the high power pulsed source, the intermediate frequency power supply, the medium-frequency pulse power supply control
System connection.
In a preferred embodiment of the invention, each magnetic control cylindrical target is internally provided with column water-cooling structure, described
Column water-cooling structure connects a cooling water source by a cooling water pipeline；By being arranged inside each magnetic control cylindrical target, column is set
Shape water-cooling structure increases by 2 times of effective water cooling area, significantly reduces indoor temperature.
In a preferred embodiment of the invention, a high-pressure pump is connected in the cooling water pipeline, to improve water flow velocity
Degree and pressure, take away more target surface heats.
In a preferred embodiment of the invention, the work target surface of the magnetic control cylindrical target be whole target surfaces five/
One, there is higher cooling efficiency relative to flat target.
In a preferred embodiment of the invention, the magnetic control cylindrical target is magnetron sputtering graphite cylinder target.
In a preferred embodiment of the invention, the frock clamp is connected by a planetary gear train and the top cover
It connects；The equal axis of sun gear and planetary gear in the planetary gear train is located in top cover, and the frock clamp connects with the planetary gear
It connects and is driven by the planetary gear and rotated, the sun wheel shaft in the sun gear is stretched out the top cover and connected with a driving mechanism
It connects, the driving mechanism connects with industrial personal computer PLC controller control and the sun gear is driven to rotate.
In a preferred embodiment of the invention, the C film low temperature controllable deposition device further includes that several settings exist
Indoor water cooling cylindrical target in the outer layer waterway body, each interior water cooling cylindrical target are arranged in two neighboring magnetic control cylindrical target
Between.By increasing indoor water cooling cylindrical target, cooling effect is accelerated, heat accumulation is reduced.
As a result of technical solution as above, the present invention has the following advantages compared with conventional magnetron sputtering technique：
1. increasing indoor water cooling cylindrical target between two neighboring magnetic control cylindrical target, cooling is accelerated, heat accumulation is reduced.
2. the cooling water pipeline of each magnetic control cylindrical target of the present invention connects a high-pressure pump, water velocity is accelerated, is reduced
Column target temperature.
3. the work target surface of each magnetic control cylindrical target of the present invention only has 1/5th of all target surfaces, have relative to flat target
There is higher cooling efficiency.
4. being provided with column water-cooling structure in each magnetic control cylindrical target of the present invention, increase by 2 times of effective water cooling area, significantly drops
Low indoor temperature.
5. the present invention uses central water-cooling cylindrical anode, effectively attracts the electronics of plasma weight, prevent charge accumulated from leading
The deposition rate of cause declines, simultaneously because the opposite of electronics is reduced in plasma slab, ionization level improves, and deposition is accelerated in progress one
Rate shortens the plated film period.
6. the present invention controlled using industry control PLC controller the vacuum acquirement of entire coating system, measurement, process implementing and
Detection, system have memory and learning functionality, can calibrate each point of technique for fixing, be examined according to calibration in repetitive process
Coating process is surveyed, by adjusting flow control process deviation, the repeatability of technique is realized, realizes low under batch plating conditions
(130 DEG C) depositions of temperature.
7. the present invention's is closed using industry control PLC controller by being incorporated into memory and following function, each customization technique of record
Key node parameter database carries out parameter regulation to mark database, each flow is finely tuned by controlling during repeated deposition
Meter ensures multiple batches of repetition stability.
8. the process portion of the present invention increases coating process by pulsed anode assisted modulation high-power impulse magnetron sputtering
Flexibility, by the variation of pulse sequence, modulation prepares multilayered structure.
9. the process portion of the present invention carries out chemical vapor deposition using anode additional bias, modulation forms nanostructure,
Improve C film toughness and intensity.
Description of the drawings
Fig. 1 is C film low temperature controllable deposition device part-structure schematic diagram of the present invention.
Specific implementation mode
Referring to Fig. 1, C film low temperature controllable deposition device shown in figure, including Double water-cooled cavity 1 and cover in bilayer
Top cover (not shown) on water cooling cavity 1, wherein Double water-cooled cavity 1 include the rounded internal layer water of a radial section
The cold cavity 1a and outer layer water cooling cavity 1b annular in shape for being looped around the peripheries internal layer water cooling cavity 1a.
The C film low temperature controllable deposition device further includes four magnetic control cylindrical targets being arranged in outer layer waterway body 1b
2, four indoor water cooling cylindrical targets 3, one being arranged in outer layer waterway body 1b are arranged in the centers internal layer waterway body 1a
Central water-cooling cylindrical anode 4, several be arranged in internal layer waterway body 1a and positioned at the work of the periphery of central water-cooling cylindrical anode 4
Clamps 5.
Each magnetic control cylindrical target 2 is internally provided with column water-cooling structure (not shown), and column water-cooling structure passes through
One cooling water pipeline (not shown) connects a cooling water source (not shown).The present invention is justified by setting in each magnetic control
Column water-cooling structure is arranged in 2 inside of column target, increases by 2 times of effective water cooling area, significantly reduces indoor temperature.The present invention is also in cooling
Water lines connect a high-pressure pump (not shown) and take away more target surface heats to improve water velocity and pressure.
The magnetic control cylindrical target 2 of the present invention is magnetron sputtering graphite cylinder target, work target surface be whole target surfaces five/
One, there is higher cooling efficiency relative to flat target.
Four magnetic control cylindrical targets 2 of the present invention are divided into two groups, and one group of magnetic control cylindrical target 2 is supplied using high power pulsed source
Electricity, another group of magnetic control cylindrical target 2 are powered using intermediate frequency power supply.
Each interior water cooling cylindrical target 3 is arranged between two neighboring magnetic control cylindrical target 2.By increasing indoor water cooling cylinder
Target accelerates cooling effect, reduces heat accumulation.
The central water-cooling cylindrical anode 4 of the present invention uses medium-frequency pulse power supply power supply；Double water-cooled cavity 1 is also true by taking out
Empty connector connects vacuum system with vacuum-pumping tube, and Double water-cooled cavity 1 also connects argon gas stream with tracheae by gas-tpe fitting respectively
Gauge 8a, nitrogen stream gauge 8b and methane flow meter 8c；Argon flow amount meter 8a connection argon gas air sources, nitrogen stream gauge 8b connection nitrogen
Gas air source, methane flow meter 8c connection methane air sources.
The C film low temperature controllable deposition device of the present invention further includes an industrial personal computer PLC controller 7 and pair of lamina waterway
Internal signal pickup assembly 6, signal pickup assembly is acquiring the water cooling signal in the Double water-cooled cavity；Industrial personal computer
PLC controller 7 is connect with 6 signal of signal pickup assembly, industrial personal computer PLC controller 7 and argon flow amount meter 8a, nitrogen stream gauge
8b, methane flow meter 8c, high power pulsed source, intermediate frequency power supply, the control connection of medium-frequency pulse power supply.
Several frock clamps 5 are connect by a planetary gear train (not shown) with top cover；The sun in planetary gear train
Wheel and the equal axis of planetary gear are located in top cover, and each frock clamp connect with planetary gear and driven by planetary gear and rotated, sun gear
In sun wheel shaft stretch out and top cover and connect with a driving mechanism, driving mechanism connects simultaneously with the control of industrial personal computer PLC controller
Drive sun gear rotation.
A kind of C film low temperature controllable deposition method of the present invention, includes the following steps：
(1) vacuum step；
(2) cleaning step；
(3) high-power impulse magnetron sputtering column target deposits binder course step；
(4) high-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step；
(5) medium frequency magnetron sputtering assistant chemical vapor deposition step.
In a preferred embodiment of the invention, it is evacuated to 1.0x10 in the vacuum step-4Pa。
Cleaning step is specifically to open high power pulsed source, voltage 800V, pulse current 400A, bias 500V, anode
300V, scavenging period 15 minutes, argon gas 1Pa；
High-power impulse magnetron sputtering column target deposition binder course step is specifically to reduce to be biased into 120V, anode 200V, argon
Gas 1Pa, nitrogen 0.15Pa；Deposition 120 minutes.
High-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step is specifically high power pulse electricity
Source, voltage 600V, pulse current 300A are biased into 120V, anode 200V, argon gas 1Pa, nitrogen 0.15Pa, methane 0.30Pa, in
Frequency graphite target power supply 10A is deposited 30 minutes.
Medium frequency magnetron sputtering assistant chemical vapor deposition step is specifically to close high power pulsed source, is biased into 120V,
Anode 200V, argon gas 1Pa, methane 0.40Pa, intermediate frequency graphite target power supply 10A are deposited 120 minutes.
The process for method that the present invention will be described in detail for below using plunger as workpiece：
(1) cleaned plunger is mounted on work rest, closes cavity door, is evacuated to 1.0x10-4Pa starts to plate
Film；
(2) unlatching high power pulsed source, voltage 800V, pulse current 400A, bias 500V, anode 300V, target are
Crome metal aluminium, scavenging period 15 minutes, argon gas 1Pa；
(3) it reduces and is biased into 120V, anode 200V, argon gas 1Pa, nitrogen 0.15Pa；Deposition 120 minutes；
(4) high power pulsed source, voltage 600V, pulse current 300A are biased into 120V, anode 200V, argon gas 1Pa,
Nitrogen 0.15Pa, methane 0.30Pa, intermediate frequency graphite target power supply 10A are deposited 30 minutes；High power pulsed source is closed, is biased into
120V, anode 200V, argon gas 1Pa, methane 0.40Pa, intermediate frequency graphite target power supply 10A are deposited 120 minutes；
(5) system is closed after depositing, and takes out sample within cooling 30 minutes；
It tests binding force and shows 47N, friction coefficient 0.04, load 10N.
Claims (13)
1. a kind of C film low temperature controllable deposition method, which is characterized in that include the following steps：
(1) vacuum step；
(2) cleaning step；
(3) high-power impulse magnetron sputtering column target deposits binder course step；
(4) high-power impulse magnetron sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step；
(5) medium frequency magnetron sputtering assistant chemical vapor deposition step.
2. a kind of C film low temperature controllable deposition method as described in claim 1, which is characterized in that in the vacuum step
It is evacuated to 1.0x10-4Pa。
3. a kind of C film low temperature controllable deposition method as claimed in claim 2, which is characterized in that the cleaning step is specific
It is to open high power pulsed source, voltage 800V, pulse current 400A, bias 500V, anode 300V, scavenging period 15 minutes,
Argon gas 1Pa.
4. a kind of C film low temperature controllable deposition method as claimed in claim 3, which is characterized in that the high power pulse magnetic
Control sputtering column target deposition binder course step is specifically to reduce to be biased into 120V, anode 200V, argon gas 1Pa, nitrogen 0.15Pa；Deposition
120 minutes.
5. a kind of C film low temperature controllable deposition method as claimed in claim 4, which is characterized in that the high power pulse magnetic
It is specifically high power pulsed source, voltage 600V, pulse current to control sputtering+Deposited By Dc Magnetron Sputtering nitride bearing bed step
300A is biased into 120V, anode 200V, argon gas 1Pa, nitrogen 0.15Pa, methane 0.30Pa, intermediate frequency graphite target power supply 10A, deposition
30 minutes.
6. a kind of C film low temperature controllable deposition method as claimed in claim 5, which is characterized in that the medium frequency magnetron sputtering
Assistant chemical vapor deposition step is specifically to close high power pulsed source, is biased into 120V, anode 200V, argon gas 1Pa, methane
0.40Pa, intermediate frequency graphite target power supply 10A are deposited 120 minutes.
7. a kind of device for realizing above-mentioned C film low temperature controllable deposition method, which is characterized in that including Double water-cooled cavity and
The top cover on the Double water-cooled cavity is covered, wherein the Double water-cooled cavity includes the rounded internal layer of a radial section
Water cooling cavity and the outer layer water cooling cavity annular in shape for being looped around the internal layer waterway body periphery；
The C film low temperature controllable deposition device further include several magnetic control cylindrical targets being arranged in the outer layer waterway body,
One be arranged the internal layer water cooling cavity center central water-cooling cylindrical anode, one be arranged in the internal layer waterway body
And positioned at the frock clamp of the central water-cooling cylindrical anode periphery；The magnetic control cylindrical target is divided into two groups, one group of magnetic control cylinder
Target is powered using high power pulsed source, and another group of magnetic control cylindrical target is powered using intermediate frequency power supply；The central water-cooling cylinder sun
Pole uses medium-frequency pulse power supply power supply；The frock clamp is connect with the top cover；The Double water-cooled cavity also passes through pumping
Vacuum adapter connects vacuum system with vacuum-pumping tube, and the Double water-cooled cavity also connects argon by gas-tpe fitting with tracheae respectively
Air-flow gauge, nitrogen stream gauge and methane flow meter；The argon flow amount meter connects argon gas air source, the nitrogen stream gauge connection
Nitrogen source gases, the methane flow meter connect methane air source；
The C film low temperature controllable deposition device further includes the signal in an industrial personal computer PLC controller and pair of lamina waterway body
Harvester, the signal pickup assembly is acquiring the water cooling signal in the Double water-cooled cavity；The industrial personal computer PLC controls
Device processed is connect with the signal pickup assembly signal, the industrial personal computer PLC controller and the argon flow amount meter, the nitrogen stream
Gauge, the methane flow meter, the high power pulsed source, the intermediate frequency power supply, medium-frequency pulse power supply control connection.
8. device as claimed in claim 7, which is characterized in that each magnetic control cylindrical target is internally provided with columnar water cold junction
Structure, the column water-cooling structure connect a cooling water source by a cooling water pipeline.
9. device as claimed in claim 8, which is characterized in that connect a high-pressure pump in the cooling water pipeline.
10. device as claimed in claim 9, which is characterized in that the work target surface of the magnetic control cylindrical target is whole target surfaces
1/5th.
11. device as claimed in claim 10, which is characterized in that the magnetic control cylindrical target is magnetron sputtering graphite cylinder target.
12. a kind of C film low temperature controllable deposition device as claimed in claim 7, which is characterized in that the frock clamp is logical
A planetary gear train is crossed to connect with the top cover；The equal axis of sun gear and planetary gear in the planetary gear train is located in top cover,
The frock clamp connect with the planetary gear and is driven by the planetary gear and rotated, and the sun wheel shaft in the sun gear is stretched out
The top cover is simultaneously connect with a driving mechanism, and the driving mechanism is controlled with the industrial personal computer PLC controller to be connected and drive
The sun gear rotation.
13. a kind of C film low temperature controllable deposition device as described in any one of claim 7 to 12 claim, feature exist
In the C film low temperature controllable deposition device further includes several indoor water cooling cylinders being arranged in the outer layer waterway body
Target, each interior water cooling cylindrical target are arranged between two neighboring magnetic control cylindrical target.
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