CN104862653A - Deposition method adopting combination of arc ion plating and high power pulsed magnetron sputtering - Google Patents
Deposition method adopting combination of arc ion plating and high power pulsed magnetron sputtering Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 31
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- 239000002184 metal Substances 0.000 claims abstract description 20
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Abstract
The invention provides a deposition method adopting combination of arc ion plating and high power pulsed magnetron sputtering, belongs to the technical field of material surface treatment, and aims to solve the problems of large particles caused by the fact that low-melting-point pure metal or a multi-element alloy material and a non-metal material, especially a semiconducting material and an insulating material, are taken as target materials to be applied in a traditional arc ion plating method, limitation of use extension of arc ion plating target materials, low ionization rate and low thin film deposition efficiency of a traditional magnetron sputtering technology as well as unstable discharging of conventional high power pulsed magnetron sputtering. The method comprises steps as follows: step one, a to-be-coated workpiece is placed on a sample table in a vacuum chamber, a related power supply is switched on; step two, thin film deposition is performed and comprises steps as follows: when the vacuum degree in the vacuum chamber is lower than 10<-2> Pa, working gas is introduced, gas pressure is adjusted, the related power supply is switched on, after the target surface is cleaned, a synchronous waveform matching device is adopted to adjust waveforms output by a grid bias power supply and a high power pulsed magnetron sputtering power supply, required technological parameters are set, and thin film deposition is performed.
Description
Technical field
The present invention relates to the deposition method of arc ion plating and high-power impulse magnetron sputtering compound, belong to technical field of material surface treatment.
Background technology
Originally magnetron sputtering technique adopts direct current supply pattern, compared to arc ions electroplating method, does not have macrobead defect, and can realize the low-temperature sputter deposition of various material, but the ionization level of its sputter material is very low, the power density of sputtering target is at 50W/cm
2, can not get enough ion populations during thin film deposition, cause sedimentation effect very low, simultaneously ion with energy lower, make Thin Film Tissue fine and close not.1999, people (the Kouznetsov V such as the V. Kouznetsov of Linkoping,Sweden university, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power densities [J]. Surf Coat Tech, 1999, 122 (2-3): 290-293.) high-power impulse magnetron sputtering technology (HPPMS) is proposed, it utilizes higher pulse peak power and lower pulse width to improve the ionization level of sputter material, target cathode can not increase the requirement of target cooling because of overheated simultaneously.Its peak power improves 100 times compared to conventional DC magnetron sputtering, is about 1000 ~ 3000W/cm
2, the density of plasma body reaches 10
18m
-3the order of magnitude, its central region ion density can reach 10
19m
-3the order of magnitude, the ionization level of sputter material reaches as high as more than 90% simultaneously, and does not contain the macrobead defect in the highest arc ions electroplating method of current ionization level.After 2008, at home each colleges and universities also start launch for high-power impulse magnetron sputtering technology research (Li Xiping. high power combined pulsed magnetron sputtering plasma characteristics and TiAlN thin film preparation [D], Harbin Institute of Technology, 2008. Wuzhong shakes, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping. the development and research [J] of high-power impulse magnetron sputtering technology. vacuum, 2009, 46 (3): 18-22. and Mu Zongxin, Mu Xiaodong, Wang Chun, Jia Li, Dong Chuan. direct supply coupling high power pulse non-balance magnetically controlled sputter ionization property [J]. Acta Physica Sinica, 2011, 60 (1): 422-428.), but because the impulsive discharge of high-power impulse magnetron sputtering technology is unstable, and target current potential is lower, the metal ion a large amount of after ionization of target metal is sucked back into target surface, fail to arrive the deposition that matrix surface realizes film, the efficiency of thin film deposition is caused greatly to reduce, affect the paces that it replaces common magnetron sputtering and arc ion plating further, a definite limitation is received in follow-up applying.
At present, in order to solve the problem that arc ions electroplating method is using the pure metal of low melting point or multicomponent alloy material easily to produce macrobead defect, mainly contain several as follows:
The first: adopt the way of Magnetic filter to filter out macrobead, as Chinese patent is used for the plasma immersion and ion implantation device (publication number: CN1150180 of material surface modifying, publication date: on May 21st, 1997) in adopt the macrobead of 90 ° of magnetic filter paired pulses cathode arcs to filter, the people such as American scholar Anders (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25 (4): 670-674.) and (Zhang Yujuan such as the Zhang Yujuan of He'nan University, Wu Zhiguo, Zhang Weiwei etc. filtered cathode arc plasma to prepare in TiAlN thin film mode of deposition to the impact of film texture. China YouSe Acta Metallurgica Sinica. 2004, 14 (8): 1264-1268.) macrobead having made " S " magnetic filter anticathode arc in article filters, also have people (the Anders A such as American scholar Anders, MacGill R A. Twist filter for the removal of macroparticles from cathodic arc plasmas [J]. Surf Coat Tech, 2000, 133-134:96-100.) Magnetic filter of Twist filter that proposes, although these methods have certain effect in filtration and elimination macrobead, but the loss of the transmission efficiency of plasma body is serious, ion current density is reduced greatly.Again can on the basis of guaranteed efficiency based on macrobead can be filtered, Chinese patent vacuum cathode arc straight tube filter (publication number: CN1632905, publication date: on June 29th, 2005) the middle method proposing straight tube and filter, but which in turn reduces filter effect.In a word, relevant researchist by the various Magnetic filter method of contrast (Anders A. Approaches to rid cathodic arc plasmas of macro-and nanoparticles:a review [J]. Surf Coat Tech, 1999, 120-121319-330. with Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007, 35 (4): 992-999.) find that arc ion plating plasma body is very difficult to take into account by keeping high transmission efficiency after magnetic filter and eliminating macrobead, drastically influence the application of this technology in high-quality thin-film deposition.
Second, adopt the method stopping shielding, before arc ion plating target source, such as directly adopt baffle plate to shield macrobead (Miernik K, Walkowicz J, Bujak J. Design and performance of the microdroplet filtering system used in cathodic arc coating deposition [J]. Plasmas & Ions, 2000,3 (1-4): 41-51.); Or utilize the difference of macrobead and arc plasma transmission speed, a high speed rotating unit (Utsumi T is applied outside arc source, English J H. Study of electrode products emitted by vacuum arcs in form of molten metal particles [J]. J Appl Phys, 1975,46 (1): 126-131.), by adjusting the velocity of rotation of rotating paddle, realize filtering the stop of macrobead defect; Or hole is drilled with on baffle plate, by adjusting the spacing of two-layer baffle plate so that the transmission of arc plasma, stop that macrobead deposits to dual-layered baffle plate shielding unit (the Zhao Y of film surface, Lin G, Xiao J, et al. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011,257 (13): 5694-5697.); Also have by regulating fender angle eliminate oarse-grained flap type shielding unit (Zimmer O. Vacuum arc deposition by using a Venetian blind particle filter [J]. Surf Coat Tech, 2005,200 (1-4): 440-443.).Stop that shielding is by restriction macrobead and the movement path of plasma body, utilize good diffractive of arc plasma to prepare film, but the method can cause the transmission efficiency loss of plasma body serious, receives certain restriction in actual applications.
3rd, matrix adopts the electric field suppressing method of bias voltage, and in arc plasma, the movement velocity due to electronics is far longer than the movement velocity of ion, and the electronic number arriving large particle surface in the unit time is greater than number of ions, makes macrobead present electronegativity.When matrix applying negative bias, electric field will produce repulsive interaction to electronegative macrobead, and then reduce the generation of film surface macrobead defect.The people such as German scholar Olbrich (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991, 49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr (C, N) at low substrate temperature using a pulsed bias voltage [J]. Mat Sci Eng A, 1991, 140:830-837.) adopt pulsed bias to replace traditional direct current (DC) bias, define a kind of new physical gas phase deposition technology---pulsed bias arc ion plating technology, not only greatly reduce the oarse-grained number of film surface, also overcome the substrate temperature that Traditional DC bias voltage causes too high, the problems such as stress in thin films is larger.The people such as the woods Guoqiang of Dalian University of Technology (woods Guoqiang. Process ba-sis research [D] of pulsed bias arc ion plating. Dalian University of Technology, 2008. and Huang Meidong, woods Guoqiang, Dong Chuan, Sun Chao, hear immediately. the Influencing Mechanism [J] of Bias On Morphologies of Films Prepared By Arc Ion Plating. Acta Metallurgica Sinica, 2003, 39 (5): 510-515.) mechanism causing macrobead defect to reduce for pulsed bias conducts in-depth analysis, by paired pulses bias voltage amplitude, the adjustment of the processing parameter such as frequency and pulse width, the sheaths motion characteristics of arc plasma can be improved, reduce the macrobead defect counts of film surface, improve the quality of film, be widely used in the production of reality, but still can not eliminate macrobead defect completely.
4th, the optimization of processing parameter, by adjustment operating air pressure (Brown I G. Cathodic arc deposition of films. Ann Rev Mater Sci, 1998, 28 (1): 243-269. and Chen Kangmin, open lemon dawn, Zheng Chenchao, Huang Yan, Guan Qingfeng, Gong Lei, Sun Chao. nitrogen partial pressure is on the impact [J] of arc ion plating CrNx organization structure of film. vacuum science and technology journal, 2010, 30 (6): 662-666.) and utilize Magnetic control spots moving (Lang Wenchang, Xiao Jinquan, Gong Jun, Sun Chao, Huang Rongfang, to hear immediately. axisymmetrical magnetic field is on the impact of arc ion plating spots moving. Acta Metallurgica Sinica, 2010, 46 (3): 372-379. and Zhao Yanhui, Lang Wenchang, Xiao Jinquan, Gong Jun, Sun Chao. rotating transverse magnetic field arc source design [J] of arc ion plating. vacuum science and technology journal, 2013, 33 (4): 387-391.) method such as, the macrobead defect of film surface can be reduced to a certain extent, but the regulation range of thin film preparation process parameter can be caused to be subject to certain restrictions.American scholar Anders also proposes (Anders A. Growth and decay of macroparticles:A feasible approach to clean vacuum arc plasmas. J Appl Phys, 1997,82 (8): 3679-3688) adopt infrared laser to carry out the oarse-grained method of assisted evaporative, but the cost of processing unit is too expensive.
6th, novel method is introduced: pulsed magnetron sputtering ion implantation and deposition method (publication number: CN101838795A as high power combined in Chinese patent, publication date: on September 22nd, 2010) utilize high pressure and the pulse synchronization matching set that propose make full use of the advantage of high-power impulse magnetron sputtering, realize the breakthrough of high-power impulse magnetron sputtering technology at field ion implantation, but due to the restriction of high-voltage power supply, the density arriving matrix surface depositing ions can not be too high, otherwise can cause the damage of high-voltage power supply.
Summary of the invention
The present invention seeks to the macrobead in order to adopt the pure metal of low melting point or multicomponent alloy material and non-metallic material (especially semiconductor material and insulating material) to exist in conventional arc ion electroplating method as target for solution, conventional magnetron sputtering technology ionization level and thin film deposition efficiency is low and the problem of current high-power impulse magnetron sputtering discharge instability, using the pure metal of low melting point or multicomponent alloy material and non-metallic material (especially semiconductor material and insulating material) as the target of high-power impulse magnetron sputtering, recycling arc ions electroplating method can produce continual and steady plasma body, eliminate the discharge instability phenomenon of hipims technology and ion resorption effect to the disadvantageous effect of thin film deposition, make workpiece surface apply the situation of negative bias can be continuous, fine and close prepares high-quality thin-film, realize adding constituent content in film controlling simultaneously, reduce the production cost using alloys target, improve the sedimentation effect of film, reduce discharge instability and the macrobead defect disadvantageous effect to film growth and performance, propose the deposition method of arc ion plating and high-power impulse magnetron sputtering compound.
The inventive method institute using appts comprises grid bias power supply 1, arc power 2, arc ion plating target source 3, high-power impulse magnetron sputtering power supply 4, high-power impulse magnetron sputtering target source 5, synchronous waveform matching set 6, vacuum chamber 7, sample table 8, grid bias power supply kymographion 9 and high-power impulse magnetron sputtering power supply wave shape oscilloscope 10;
The method comprises the following steps:
Step one, be placed in pending workpiece in vacuum chamber 7 sample table 8 on, workpiece connects the pulse output end of grid bias power supply 1, arc power 2 is connected in the arc ion plating target source 3 be arranged on vacuum chamber 7, and high-power impulse magnetron sputtering target source 5 connects the high power pulse output terminal of high-power impulse magnetron sputtering power supply 4;
Step 2, thin film deposition: vacuumized by vacuum chamber 7, treat that the vacuum tightness in vacuum chamber 7 is less than 10
-2during Pa, pass into working gas to 0.01Pa ~ 10Pa, open synchronous waveform matching set 6, control high-power impulse magnetron sputtering power supply 4 according to the synchronous waveform triggering signal of grid bias power supply 1 output and work;
Open grid bias power supply 1, and the magnitude of voltage regulating grid bias power supply 1 to export pulse is 0 ~ 1.2kV, pulse-repetition is 0Hz ~ 80kHz, pulse width 1 ~ 90%;
Open high-power impulse magnetron sputtering power supply 4, first by the pre-ionization of direct current build-up of luminance, regulate required processing parameter, the magnitude of voltage that high-power impulse magnetron sputtering power supply 4 exports pulse is 300V ~ 2500V, pulse width is 0 μ s ~ 1000 μ s, pulse-repetition 10 ~ 1000Hz, and electric current is 10 ~ 1000A;
Grid bias power supply 1 output voltage and high-power impulse magnetron sputtering power supply 4 output voltage is controlled by synchronous waveform matching set 6, make both phase differential be-1000 μ s ~ 1000 μ s, carry out pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film preparation of nanometer multilayer or gradient-structure.
Advantage of the present invention: a. adopts high-power impulse magnetron sputtering technology to realize the higher metallics ionization level of target by high pressure low-frequency pulse, does not need other auxiliary ionization device; B. high-power impulse magnetron sputtering technology does not produce macrobead defect for the pure metal of low melting point or multicomponent alloy material, does not therefore need filtration unit, can realize the high efficiency of transmission of ionization ion; C. arc ion plating target source can make up the discharge instability restriction in high-power impulse magnetron sputtering target source, ensures that the high-density of depositing ions continues to produce; D. owing to have employed synchronous waveform matching set, the ion that matrix can be made effectively to attract high-power impulse magnetron sputtering target source produce, reduce high-power impulse magnetron sputtering technology to the resorption effect of produced ion, ensure that film deposition rate, the energy of depositing ions is improved greatly; E. by regulating the processing parameter in high-power impulse magnetron sputtering target source, in conjunction with the processing parameter in arc ion plating target source, the ion ratio of various element in compound plasma can be realized, realizing the thin film deposition of different element ratio; F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, the amplitude of pulsed bias, pulse width and frequency is utilized to realize the pinning effect of energetic ion to film growth, improve crystalline structure and the stressed condition of film growth, improve bonding strength; G. owing to eliminating the pure metal of low melting point or multicomponent alloy material and non-metallic material (especially semiconductor material and the insulating material) application limitations in arc ion plating, the interpolation of these elements in original multi-element film preparation process and the film of ratio adjustment can be realized; H. prepared film avoids the macrobead defect of low melting point element, and crystalline structure is finer and close, can improve the mechanical property of film further.
Step 3, Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc can be adopted separately to carry out thin film deposition in conjunction with direct current (DC) bias, pulsed bias or DC pulse compound bias voltage compound, prepare pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
Accompanying drawing explanation
Fig. 1 is the deposition method sketch of arc ion plating of the present invention and high-power impulse magnetron sputtering compound, Fig. 2 is the timing chart of grid bias power supply, Fig. 3 synchronous waveform matching set, Fig. 4 grid bias power supply pulse waveform is mated with high-power impulse magnetron sputtering pulse waveform integral multiple and is schemed, during Fig. 5 out of phase, grid bias power supply pulse waveform is mated with high-power impulse magnetron sputtering pulse waveform and is schemed, and during Fig. 6 different pulse width, grid bias power supply pulse waveform is mated with high-power impulse magnetron sputtering pulse waveform and schemed.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1 and Fig. 2, the deposition method institute using appts of present embodiment arc ion plating and high-power impulse magnetron sputtering compound comprises grid bias power supply 1, arc power 2, arc ion plating target source 3, high-power impulse magnetron sputtering power supply 4, high-power impulse magnetron sputtering target source 5, synchronous waveform matching set 6, vacuum chamber 7, sample table 8, grid bias power supply kymographion 9 and high-power impulse magnetron sputtering power supply wave shape oscilloscope 10;
The method comprises the following steps:
Step one, be placed in pending workpiece in vacuum chamber 7 sample table 7 on, workpiece connects the pulse output end of grid bias power supply 1, and the magnetron sputtering target source 4 be arranged on vacuum chamber 7 connects the high power pulse output terminal of high-power impulse magnetron sputtering power supply 4;
Step 2, thin film deposition: vacuumized by vacuum chamber 7, treat that the vacuum tightness in vacuum chamber 7 is less than 10
-2during Pa, pass into working gas to 0.01Pa ~ 10Pa, synchronous waveform matching set 6 controls high-power impulse magnetron sputtering power supply 4 according to the pulsed bias synchronous triggering signal that grid bias power supply 1 exports and works;
Open grid bias power supply 1, and the peak voltage regulating grid bias power supply 1 to export pulse is 0 ~ 1.2kV, pulse-repetition is 0Hz ~ 80kHz, pulse width 5 ~ 90%;
Open high-power impulse magnetron sputtering power supply 4, first by the pre-ionization of direct current build-up of luminance, regulate required processing parameter, the magnitude of voltage that high-power impulse magnetron sputtering power supply 4 exports pulse is 300V ~ 2500V, pulse width is 0 μ s ~ 1000 μ s, pulse-repetition 10 ~ 1000Hz, and electric current is 10 ~ 1000A;
Control grid bias power supply 1 output voltage and high-power impulse magnetron sputtering power supply 4 output voltage phase place by synchronous waveform matching set 6, carry out thin film deposition;
Synchronous waveform matching set 6 in present embodiment adopts two 1/2 CD4098 chips to realize, particular circuit configurations is shown in Figure 3, the bias voltage synchronous triggering signal that grid bias power supply 1 exports is transferred to synchronous waveform matching set 6, synchronous waveform matching set 6 exports Remote triggering signal control high-power impulse magnetron sputtering power supply 4 and works, synchronous waveform matching set 6 can realize two power supply signal frequencies of grid bias power supply 1 and high-power impulse magnetron sputtering power supply 4, and can carry out the adjustment of out of phase;
In process by the pre-ionization of direct current build-up of luminance, chopped pulse starter time of lag or make pulse starter easy, DC current values changes according to the output rating in high-power impulse magnetron sputtering target source 5, output voltage and target area, or direct boosted output voltages value gradually, make high-power impulse magnetron sputtering target source 5 build-up of luminance;
Grid bias power supply 1 output waveform is direct current, monopulse, DC pulse compound or multipulse compound;
Arc power 2 exports direct current, monopulse, DC pulse compound or multipulse compound;
High-power impulse magnetron sputtering power supply 4 output waveform is direct current, monopulse, DC pulse compound or multipulse compound;
Arc ion plating target source 3 adopts dystectic pure metal or multicomponent alloy material, high-power impulse magnetron sputtering target source 5 adopts the pure metal of low melting point or multicomponent alloy material and non-metallic material (especially semiconductor material and insulating material), single target, multiple target or composition target can be used, carry out pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, superlattice, there is the high-quality thin-film of nanometer multilayer or gradient-structure;
Working gas selects argon gas, or working gas to select in nitrogen, acetylene, methane, silane or oxygen one or more mixed gas, prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, superlattice, there is the film of nanometer multilayer or gradient-structure;
The proposition of the deposition method of arc ion plating and high-power impulse magnetron sputtering compound, generation and the ionization of ion are carried out in the sputtering target source in high-power impulse magnetron sputtering that makes full use of simultaneously, achieve the pure metal of low melting point or multicomponent alloy material and non-metallic material (especially semiconductor material and the insulating material) application in arc ion plating, effectively avoid the macrobead problem that low melting material produces, breach again non-metallic material (especially semiconductor material and the insulating material) application limitations in arc ion plating; Utilize synchronous waveform matching set to control on workpiece simultaneously apply negative bias and high-power impulse magnetron sputtering processing parameter, be conducive to the Potential Distributing improving high-power impulse magnetron sputtering target source plasma interval, the ion that abundant attraction high-power impulse magnetron sputtering produces, to workpiece motion s, effectively solves high-power impulse magnetron sputtering intermediate ion resorption effect and causes the inefficient problem of thin film deposition; Utilize the generation of arc ion plating (aip) to stablize lasting, that ionization level is high metallic plasma simultaneously, make up the defect of high-power impulse magnetron sputtering technology discharge instability, be conducive to the chemosynthesis reaction of high ionization level ion at workpiece surface, prepare the compound ceramic film of different element ratio, function film, multi-component multi-layer, superlattice and there is film or the pure metal film of gradient-structure.
Embodiment two: the difference of present embodiment and embodiment one is, the method institute using appts also comprises grid bias power supply kymographion 8 and high-power impulse magnetron sputtering power supply wave shape oscilloscope 9, the voltage and current waveform that grid bias power supply kymographion 8 sends for showing grid bias power supply 1, high-power impulse magnetron sputtering power supply wave shape oscilloscope 9 is for the pulsed voltage that shows high-power impulse magnetron sputtering power supply 4 and send and current waveform, and other are identical with embodiment one.
Embodiment three: present embodiment is described below in conjunction with Fig. 3, the difference of present embodiment and embodiment one is, during plated film, controlled first to open grid bias power supply 1 by synchronous waveform matching set 6, and then open high-power impulse magnetron sputtering power supply 4, other are identical with embodiment one.
Embodiment four: the difference of present embodiment and embodiment one is, grid bias power supply 1 is controlled and high-power impulse magnetron sputtering power supply 4 is opened simultaneously by synchronous waveform matching set 6, the cycle that high-power impulse magnetron sputtering power supply 4 exports pulse is the integral multiple that grid bias power supply 1 exports pulse, other are identical with embodiment one, as shown in Figure 4, the recurrence interval that high-power impulse magnetron sputtering power supply 4 exports is 10 times of recurrence interval that grid bias power supply 1 exports.
Embodiment five: composition graphs 5 illustrates present embodiment, the difference of present embodiment and embodiment one is, the bias pulse waveform phase that high-power impulse magnetron sputtering power supply 4 output high-power pulse and grid bias power supply 1 export is adjustable, when same pulse width, different phase differential makes two power supply output pulse waveforms all can overlap, partially overlap or not overlap, thus the rational Match of process choice two power pulses according to thin film deposition, other are identical with embodiment one.
Embodiment six: composition graphs 6 illustrates present embodiment, the difference of present embodiment and embodiment one is, the pulse width that high-power impulse magnetron sputtering power supply 4 output high-power pulse and grid bias power supply 1 export pulse is adjustable separately, different pulse widths make the output pulse waveform of two power supplys can the former cover the latter, the latter covers the former or overlap completely, carry out different thin film deposition processes to select, other are identical with embodiment one.
Embodiment seven: the difference of present embodiment and embodiment one is, the method also comprises:
Step 3, Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc can be adopted separately to carry out thin film deposition in conjunction with direct current (DC) bias, pulsed bias or DC pulse compound bias voltage, prepare pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure;
High-power impulse magnetron sputtering power supply 4 first can be used in step 2 to carry out magnetron sputtering and to carry out ion implantation and deposition in conjunction with high-tension pulsed bias power supply, improve the bonding force of film and matrix, then carry out step 3, obtain certain thickness film.
Embodiment eight: the difference of present embodiment and embodiment seven is, repeatedly perform step one to step 3, preparation has the multilayer films of different stress, microtexture and element ratio, and other are identical with embodiment seven;
High-power impulse magnetron sputtering power supply 4 first can be used in step 2 to carry out magnetron sputtering and to carry out ion implantation and deposition in conjunction with high pressure, improve the bonding force of film and matrix, then step 3 is carried out, then repeatedly step 2 and step 3 is performed, so repeatedly, preparation has the multilayer films of different stress, microtexture and element ratio.
Claims (10)
1. the deposition method of arc ion plating and high-power impulse magnetron sputtering compound, it is characterized in that, the method institute using appts comprises grid bias power supply 1, arc power 2, arc ion plating target source 3, high-power impulse magnetron sputtering power supply 4, high-power impulse magnetron sputtering target source 5, synchronous waveform matching set 6, vacuum chamber 7, sample table 8, grid bias power supply kymographion 9 and high-power impulse magnetron sputtering power supply wave shape oscilloscope 10;
The method comprises the following steps:
Step one, be placed in pending workpiece in vacuum chamber 7 sample table 8 on, workpiece connects the output terminal of grid bias power supply 1, the high power pulse output terminal that the arc ion plating target source 3 be arranged on vacuum chamber 7 connects the output terminal of arc power 2, high-power impulse magnetron sputtering target source 5 connects high-power impulse magnetron sputtering power supply 4;
Step 2, thin film deposition: vacuumized by vacuum chamber 7, treat that the vacuum tightness in vacuum chamber 7 is less than 10
-2during Pa, pass into working gas to 0.01Pa ~ 10Pa, open grid bias power supply 1, and the bias voltage amplitude regulating grid bias power supply 1 to export, pulse-repetition and pulse width, open grid bias power supply 1, and the peak voltage regulating grid bias power supply 1 to export pulse is 0 ~ 1.2kV, pulse-repetition is 0Hz ~ 80kHz, pulse width 1 ~ 90%;
Open high-power impulse magnetron sputtering power supply 4, first by direct current build-up of luminance, pre-ionization is carried out to working gas, surface, high-power impulse magnetron sputtering target source 5 is cleaned;
Open arc power 2, cleaned by the surface of spots moving to arc ion plating target source 3 of electric arc, regulate the processing parameter needed, the current value that arc power 2 exports is 40 ~ 300A, keeps the stable generation of arc plasma;
Open synchronous waveform matching set 6, according to the synchronous triggering signal that grid bias power supply 1 exports, the work of high-power impulse magnetron sputtering power supply 4 is controlled by synchronous waveform matching set 6, required processing parameter is arranged, the magnitude of voltage that high-power impulse magnetron sputtering power supply 4 exports pulse is 300V ~ 2500V, pulse width is 0 μ s ~ 1000 μ s, pulse-repetition 10 ~ 1000Hz, electric current is 10 ~ 1000A, control the phase place of grid bias power supply 1 output voltage and high-power impulse magnetron sputtering power supply 4 output voltage, plated film ion is effectively attracted, carry out the deposition of film and control low melting point and non-metallic material (especially semiconductor material and insulating material) ratio in the film.
2. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, the method institute using appts also comprises grid bias power supply kymographion 9 and high-power impulse magnetron sputtering power supply wave shape oscilloscope 10, grid bias power supply kymographion 9 is for the pulsed voltage that shows grid bias power supply 1 and send and current waveform, and high-power impulse magnetron sputtering power supply wave shape oscilloscope 10 is for the pulsed voltage that shows high-power impulse magnetron sputtering power supply 4 and send and current waveform.
3. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, can be controlled to open grid bias power supply 1 high-power impulse magnetron sputtering power supply 4 by synchronous waveform matching set 6 simultaneously, and then open arc power 2 and carry out thin film deposition.
4. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, control grid bias power supply 1 by synchronous waveform matching set 6 and high-power impulse magnetron sputtering power supply 4 is opened simultaneously, the cycle that high-power impulse magnetron sputtering power supply 4 exports pulse is the integral multiple that grid bias power supply 1 exports pulse.
5. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, it is monopulse, DC pulse compound or multipulse compound that high-power impulse magnetron sputtering power supply 4 exports pulse, and the electric current that arc power 2 exports is direct current, pulse or DC pulse compound.
6. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, it is monopulse, DC pulse compound or multipulse compound that grid bias power supply 1 exports pulse, is controlled the waveform parameter of high-power impulse magnetron sputtering power supply 4 output by synchronous waveform matching set 6.
7. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, is characterized in that, the method also comprises:
Step 3, Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc can be adopted separately to carry out thin film deposition in conjunction with direct current (DC) bias, pulsed bias or DC pulse compound bias voltage, prepare pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
8. the deposition method of arc ion plating according to claim 7 and high-power impulse magnetron sputtering compound, it is characterized in that, repeatedly perform step one to step 2, prepare pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
9. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, the target body material that high-power impulse magnetron sputtering target source 5 adopts can be pure metal element or the multiple elements design target of low melting point, and arc ion plating target source 3 can not adopt non-metal semiconductor materials and insulating material.
10. the deposition method of arc ion plating according to claim 1 and high-power impulse magnetron sputtering compound, it is characterized in that, working gas selects argon gas, or working gas to select in nitrogen, acetylene, methane, silane or oxygen one or more mixed gas, prepare pure metal film, the compound ceramic film of different element ratio, function film and there is the high-quality thin-film of nanometer multilayer or gradient-structure.
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