CN109989014A

CN109989014A - A kind of combination field and the compound vacuum deposition method of liner bias straight tube

Info

Publication number: CN109989014A
Application number: CN201711490317.8A
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2017-12-30
Publication date: 2019-07-09

Abstract

A kind of combination field and the compound vacuum deposition method of liner bias straight tube, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: the devices such as grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias hose straightening device and power supply, movable coil device and power supply, Waveform Matching device, high-power impulse magnetron sputtering target source and power supply；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10^‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.

Description

A kind of combination field and the compound vacuum deposition method of liner bias straight tube

Technical field

The present invention relates to a kind of combination fields and the compound vacuum deposition method of liner bias straight tube, belong at material surface Manage technical field.

Background technique

During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 10¹⁰A/m², cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.

Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm², the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm², the density of plasma reaches 10¹⁸m^-3The order of magnitude, central region ion concentration Up to 10¹⁹m^-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.

Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.

It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.

Summary of the invention

The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from Daughter, constraint and biasing electric field in conjunction with multi-stage magnetic field filter method and liner bias hose straightening device own form attract compound Effect guarantees arc-plasma with higher efficiency of transmission to eliminate the bulky grain defect contained in arc-plasma By liner bias hose straightening device and multi-stage magnetic field filter device, magnetically confined and itself bias of movable coil device are recycled The compound action that electric field attracts eliminates the arc plasma for transmitting out from multi-stage magnetic field device and liner bias hose straightening device The bulky grain defect that contains in body, while utilizing movable coil device control high-power impulse magnetron sputtering and arc ion plating The transmission direction of compound plasma in a vacuum chamber is realized and is deposited to the film on substrate work-piece surface in any position in vacuum chamber With the control and regulation of thin film composition, compound plasma is reduced in the indoor loss of vacuum, is overcome due to vacuum chamber and target source position It sets limitation or base shape limits caused film deposition problem of non-uniform, thoroughly remove inclined from multi-stage magnetic field device and liner It is possible to remaining bulky grain defect out in the arc-plasma for transmitting in straightening pipe device, keeps workpiece surface negative in application Ion energy is adjusted in the case where bias, is removed using the biasing electric field inhibiting effect of matrix surface big in arc-plasma Grain defect, the high-quality thin-film of preparation continuously, fine and close, while realization make target elements content addition control, reduction in film With the production cost of alloys target, the efficiency of transmission of raising plasma, the deposition velocity of increase film and decrease or even eliminate big Grain defect to the adverse effect of film microstructure, continuous compact deposits and service performance, propose a kind of combination field with The compound vacuum deposition method of liner bias straight tube.

Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias straight tube dress Set (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16), Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction Fixed, liner bias hose straightening device (14) connects the cathode output end of liner grid bias power supply (15), opens power supply total control switch and outer Portion's water-cooling circulating system；

Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10^-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；

It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；

It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；

It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity；

Liner bias hose straightening device (14) can cooperate the internal diameter of multi-stage magnetic field device (12) design straight tube, the internal diameter of straight tubeDGreatly Outer diameter in arc ion plating target source (3), outer diameter be less than multi-stage magnetic field device (12) internal diameter, with multi-stage magnetic field device (12) it Between activity insulation be assembled together, liner bias hose straightening device (14) can dismantle in time with apparent surface pollution level cleaning and pacify Dress avoids the inside pipe wall pollution of multi-stage magnetic field device (12) under linerless board status and is difficult to the problem of clearing up, and effectively keeps away Exempt from the pollution for causing thin film composition after target is replaced to the secondary sputtering of multi-stage magnetic field device inner wall surface pollutant；Liner bias The length of straight pipe of hose straightening device (14)HIt is identical with the length of multi-stage magnetic field device (12), it is selected according to different targets and technological parameter The allocation plan of liner bias hose straightening device (14) is selected, realizes the scavenging effect constrained using own form to bulky grain；

The material of multi-stage magnetic field device (12) and liner bias hose straightening device (14) selects 304 stainless steels of nonmagnetic, resistance to cleaning Material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic field according to the diameter of target, cooling, transmission range The number of turns and direction, liner bias hose straightening device (14) is according to multi-stage magnetic field device (12) internal diameter and arc ion plating target source (3) Outer diameter determines the outer diameter and inner diameter of straight tube, and straight tube needs to select suitable thickness according to length and rigidity, join according to actual design Number processing；

It opens liner grid bias power supply (15), liner bias hose straightening device (14) keeps direct current, pulse, multiple-pulse, DC pulse Compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type, arteries and veins Width and pulse pattern are rushed, the adjustment of output voltage guarantees that liner bias hose straightening device (14) attract bulky grain, to heavy Product ion is repelled, and loss of the arc-plasma in pipe in transmission process is reduced, and reduction even is eliminated arc plasma Bulky grain defect in body improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply (15) Voltage parameter be -200 ~+200V, be that direct current, pulse, multiple-pulse, DC pulse be compound or Bipolar pulse power, The adjustable pulse frequency of middle pulse pattern, pulse width and pulse pattern, generate week to bulky grain defect during the deposition process Phase property or continual and steady attraction greatly reduce bulky grain and pass through multi-stage magnetic field device (12) and liner bias hose straightening device (14) probability；

It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；

Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias hose straightening device (14) transmission, utilizes the shape of movable coil device With the cooperation of magnetic field magnetic line layout, direction, movable coil can using 90 degree classical flexure types, can also using straight line with Bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line group Close the magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and The typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and straight Line part is determined according to the needs of spatial position and transmission path, is realized the separation with bulky grain defect, is made it with higher Efficiency of transmission reach matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or Film caused by base shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is to electricity Bulky grain defect in arc plasma is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, High-power impulse magnetron sputtering technology discharge instability and ion resorption problem are overcome, makes compound plasma with higher biography Defeated efficiency realizes the adjusting to magnetic direction and magnetic field strength, pilot arc plasma by movable coil device (9) Arbitrary shape on any position or sample stage (12) in vacuum chamber (13) is reached with high-power impulse magnetron sputtering plasma Matrix surface, the adjustings such as coil turn, coil-span, shape and transmission path of movable coil device (9) are compound to control Plasma reduces loss of the compound plasma in vacuum chamber (13), removes the bulky grain defect in arc-plasma, Carry out the fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes the positive bias on movable coil device (9) Variation, the attraction to electronics in arc-plasma and remaining bulky grain may be implemented in the electric field that positive bias generates, and then increases The ion populations of the arc-plasma exported in movable coil device (9) increase, and promote arc-plasma in movable coil Efficiency of transmission in device (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, copper The diameter of pipe, the number of turns of thickness and length foundation movable coil device (9), coil channel diameter, coil shape, coil turn-to-turn Away from, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil installation's power source (10) is just Cathode provides suitable electric current, the input range of electric current to movable coil device (9) according to magnetic field strength, direction and cooling system For 0 ~ 2000A, guarantee that the stability of entire vacuum system and movable coil device (9) export suitable magnetic field, make it is compound it is equal from The path transmission that daughter is set according to movable coil device (9), with high transmission while guaranteeing to remove remaining bulky grain Efficiency reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；

Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.

According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.

Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b. Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, the further removing to remaining bulky grain defect from multi-stage magnetic field device and liner bias hose straightening device overcome High-power impulse magnetron sputtering technology discharge instability and ion resorption problem reduce compound plasma and pass in vacuum chamber Loss during defeated further increases the efficiency of transmission and film of compound plasma by the guidance in movable coil magnetic field Deposition velocity, overcome the limitation of deposition position caused by designing due to vacuum chamber space and target source layout or base shape to limit Caused film deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also pass through variable resistance Device device adjusts the series impedance of movable coil, realizes the adjustment to movable coil itself positive bias parameter, realizes to electric arc The attraction of electronics and remaining bulky grain in plasma, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil, Remaining bulky grain defect is eliminated, the deposition velocity of film is increased；H. multi-stage magnetic field filter device can pass through the constraint in magnetic field Guarantee that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and make by the magnetic line of force of multi-stage magnetic field High efficiency of transmission of the arc-plasma in multi-stage magnetic field device also changes the movement road of arc-plasma and bulky grain defect Diameter is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；I. liner bias is straight Pipe device, which passes through, can apply direct current, pulse or the compound positive bias of DC pulse, continue to bulky grain or periodically Effectively attract, depositing ions continue or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, Loss of the plasma in pipe in transmission process is reduced, the efficiency of transmission of arc-plasma and sinking for film are further increased Product speed；J. liner bias hose straightening device determines straight according to the internal diameter of multi-stage magnetic field device and the outer diameter in arc ion plating target source The outer diameter and inner diameter of pipe, straight tube need to select suitable thickness according to length and rigidity, limit bulky grain by own form and lack Sunken motion path eliminates the bulky grain defect in arc-plasma, realizes the constraint elimination effect to bulky grain defect, Liner bias hose straightening device is flexibly dismantled, and cleaning is convenient, avoids the inside pipe wall pollution of multi-stage magnetic field device under linerless board status The problem of cleaning, it is possible to prevente effectively from after target replacement, secondary sputtering of the different targets to multi-stage magnetic field device wall polluting object Cause the pollution of thin film composition；K. pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency Rate is realized using the inhibition repelling effect of electric field and eliminate and to compound plasma energy to remaining bulky grain defect Adjust optimization；L. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, inclined using pulse Type, amplitude, pulse width and the frequency of pressure realize the pinning effect that energetic ion grows film, improve the crystalline substance of film growth Body tissue and stress state improve bond strength, improve the service performance of film；M. by utilizing a kind of combination field and liner Film prepared by the compound vacuum deposition method of bias straight tube eliminates the bulky grain defect in film, reduces compound etc. Loss of the gas ions in filter device and vacuum chamber, improves the service efficiency of compound plasma, realizes the quick of film Preparation, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to the service performance for further increasing film.

A kind of combination field and the compound vacuum deposition method of liner bias straight tube, which can singly cover or more set groups It closes, and combines the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias hose straightening device (14) It is combined with the multiple types of movable coil device (9), realizes the Optimized Matching, multi-stage magnetic field and movable coil magnetic field of different wave Transmission path guidance, the compound ceramic of pure metal film, different element ratio is prepared in the indoor any position of vacuum Film, function film and the film with nanometer multilayer or gradient-structure can also cover using single set or mostly the device and combine Using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc it is one or two kinds of more than Method combination, then Dc bias, pulsed bias or the compound bias of DC pulse are used, realize two or more deposition side The compound of formula carries out film deposition, prepare pure metal film, the compound ceramic film of different element ratios, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Detailed description of the invention

Fig. 1 is a kind of scheme of erection of combination field and the compound vacuum deposition method of liner bias straight tube of the present invention；Fig. 2 It is 6 kinds of topology layouts of movable coil device；Fig. 3 is the structure diagram of liner bias hose straightening device；Fig. 4 is synchronous waveform matching Device, high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and high-power impulse magnetron sputtering monopole Property single pulse waveforms integral multiples, out of phase and different pulse widths matching figure.

Specific embodiment

Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-4, a kind of combination field of present embodiment with it is interior Serving as a contrast the compound vacuum deposition method institute use device of bias straight tube includes grid bias power supply (1), arc power (2), arc ion plating target Source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), It is movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), interior Serve as a contrast bias hose straightening device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias hose straightening device (14) transmission, utilizes the shape of movable coil device With the cooperation of magnetic field magnetic line layout, direction, movable coil can using 90 degree classical flexure types, can also using straight line with Bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line group Close the magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and The typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and straight Line part is determined (as illustrated in fig. 1 and 2) according to the needs of spatial position and transmission path, realizes point with bulky grain defect From, so that it is reached matrix surface with higher efficiency of transmission, it is heavy caused by overcoming due to vacuum chamber space and the design of target source layout Film caused by the limitation of product position or base shape limit deposits problem of non-uniform, carries out the fast deposition of film, multistage magnetic Field device (12) and liner bias hose straightening device (14) are filtered elimination to the bulky grain defect in arc-plasma, guarantee The uniformity of target ablation improves the utilization efficiency of target, overcome high-power impulse magnetron sputtering technology discharge instability and Ion resorption problem makes compound plasma with higher efficiency of transmission by movable coil device (9), while realizing to magnetic field The adjusting in direction and magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering plasma reach vacuum chamber (13) matrix surface of arbitrary shape, coil turn, the line of movable coil device (9) on any position or sample stage (12) in The adjustings such as spacing, shape and transmission path are enclosed to control compound plasma, reduce compound plasma in vacuum chamber (13) Loss, remove arc-plasma in bulky grain defect, carry out the fast deposition of film；Standardsizing rheostat device (11) Output resistance, realize movable coil device (9) on positive bias variation, positive bias generate electric field may be implemented to electric arc etc. from The attraction of electronics and remaining bulky grain in daughter, so increase the arc-plasma exported in movable coil device (9) from Subnumber mesh increases, and promotes efficiency of transmission of the arc-plasma in movable coil device (9), eliminates remaining bulky grain and lacks It falls into；Movable coil device (9) selects low-resistance copper tube, and diameter, thickness and the length of copper pipe are according to movable coil device (9) The number of turns, coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and biography Defeated distance determines；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction and cooling system to active line Coil apparatus (9) provides suitable electric current, and the input range of electric current is 0 ~ 2000A, guarantees the stability and work of entire vacuum system The suitable magnetic field of moving-wire coil apparatus (9) output, the path transmission for setting compound plasma according to movable coil device (9), Guarantee to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoids compound plasma in vacuum Loss, realizes the fast deposition of film in room (13)；

The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.

Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.

Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.

It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.

A kind of combination field and the compound vacuum deposition method of liner bias straight tube, make full use of high power pulse magnetic control to splash It hits sputtering target source while carrying out the generation and ionization of ion, break through the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point The application limit of material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating System, effectively avoids bulky grain problem caused by low melting material；Institute on synchronous waveform coalignment control workpiece is utilized simultaneously Apply back bias voltage and high-power impulse magnetron sputtering technological parameter, is conducive to improve high-power impulse magnetron sputtering target source plasma The Potential Distributing in body section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate effectively solve Gao Gong to workpiece motion s The problem that rate pulsed magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ion plating (aip) is utilized simultaneously It generates and stablizes metallic plasma lasting, that ionization level is high, make up lacking for high-power impulse magnetron sputtering technology discharge instability It falls into, is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, the compound ceramic for preparing different element ratios is thin Film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.Utilize movable coil device Shape and magnetic field magnetic line layout, direction cooperation, movable coil can also use using 90 degree of classical flexure types Straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line with Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and the tangent group of straight line, circular arc and straight line Close) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), circle therein Arc and straight line portion are determined according to the needs of spatial position and transmission path, are realized to arc-plasma and high power arteries and veins The effective control for rushing magnetron sputtering Plasma Transport path is transmitted to from multi-stage magnetic field device and liner bias hose straightening device Remaining bulky grain defect is purged in arc-plasma out, overcomes the electric discharge of high-power impulse magnetron sputtering technology not Stable and ion resorption problem reduces loss of the compound plasma in vacuum chamber transmission process, passes through movable coil magnetic field Guidance, further increase the efficiency of transmission of compound plasma and the deposition velocity of film, overcome due to vacuum chamber space and Film caused by the limitation of deposition position caused by target source layout designs or base shape limit deposits problem of non-uniform, Ke Yi The preparation of film is realized in the optimum position of vacuum chamber, can also adjust the series impedance of movable coil by rheostat device, It realizes the adjustment to movable coil itself positive bias parameter, realizes the suction to electronics and remaining bulky grain in arc-plasma Draw, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil, eliminate remaining bulky grain defect, increases the heavy of film Product speed；Electric arc is guaranteed in the stable motion of target material surface by magnetically confined using multi-stage magnetic field filter device, generation is held Continuous arc-plasma, and efficient biography of the arc-plasma in multi-stage magnetic field device is made by the magnetic line of force of multi-stage magnetic field It is defeated, change the motion path of arc-plasma and bulky grain defect also to realize the separation of the two, is further reduced or even disappears Except the bulky grain defect in arc-plasma；It is compound to apply direct current, pulse or DC pulse using liner bias hose straightening device Positive bias, to bulky grain carry out continue or periodically effectively attract, effectively avoid bulky grain caused by low melting material Problem continue to depositing ions or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduced Loss of the plasma in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition speed of film Degree, liner bias hose straightening device determine the outer diameter of straight tube according to the internal diameter of multi-stage magnetic field device and the outer diameter in arc ion plating target source And internal diameter, straight tube need to select suitable thickness according to length and rigidity, and the movement of bulky grain defect is limited by own form The bulky grain defect in arc-plasma is eliminated in path, realizes the constraint elimination effect to bulky grain defect, liner bias Hose straightening device is flexibly dismantled, and cleaning is convenient, avoids asking for the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status Topic, it is possible to prevente effectively from different targets cause film to the secondary sputtering of multi-stage magnetic field device wall polluting object after target replacement The pollution of ingredient；Pulsed bias power supply utilizes electric field by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency Inhibition repelling effect realize remaining bulky grain defect eliminate and the adjusting of compound plasma energy is optimized, change The section Potential Distributing of plasma, sufficiently attracts compound plasma to workpiece motion s, realizes the fast of film near kind matrix Speed deposition；The microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize pulsed bias Type, amplitude, pulse width and frequency realize the pinning effect that energetic ion grows film, improve the crystal group of film growth It knits and stress state, raising bond strength improves the service performance of film；It is also steady using the generation of arc ion plating (aip) simultaneously Fixed metallic plasma lasting, ionization level is high is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, preparation Compound ceramic film, function film, multi-component multi-layer, superlattices and the film or pure with gradient-structure of different element ratios Metallic film；By disappearing using film prepared by a kind of combination field and the compound vacuum deposition method of liner bias straight tube In addition to the bulky grain defect in film, reduces loss of the compound plasma in filter device and vacuum chamber, avoid not Pollution of the inner lining apparatus surface residues to film, improves the service efficiency of compound plasma caused by replacing with target, The quick preparation for realizing film, the Energy distribution of compound plasma is optimized using pulsed bias, and can guarantee film crystalline substance Body tissue and microstructure are finer and close, are conducive to the service performance for further increasing film.

Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) period for exporting pulse is the integral multiple of grid bias power supply (1) output pulse, as shown in figure 4, high-power impulse magnetron sputtering is electric The pulse period of source (4) output is 8 times of the pulse period of grid bias power supply (1) output, and it is heavy to carry out film for technical arrangement plan Product prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.

Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) the bias pulse waveform phase of output high-power pulse and grid bias power supply (1) output is adjustable, as shown in figure 4, wide in same pulse When spending, different phase differences allows two power supply output pulse waveforms to be all overlapped, partially overlap or be not overlapped, thus according to The Proper Match of two power pulses of process choice of film deposition, technical arrangement plan carry out film deposition, and preparation has not The multilayer films of same stress state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) pulse width of output high-power pulse and grid bias power supply (1) output pulse is independently adjustable, as shown in figure 4, different pulses Width makes that the output pulse waveform of two power supplys can cover the latter with the former, the latter covers the former or is completely coincident, technique ginseng Number adjustment, carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, He is identical as embodiment one.

Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment two.

Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment three.

Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment four.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) output pulse is unipolarity multiple-pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse wave with the period The matching of shape and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) output pulse is unipolarity single hop depth oscillating impulse, then is the cooperation of grid bias power supply (1) output pulse, bias plasma with the period The matching of source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Shown in Fig. 4, technical arrangement plan carries out film deposition, and preparing has the more of different stress, microstructure and element ratio Layer structural membrane, other are identical as embodiment one.

Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is unipolarity single hop depth oscillating impulse that source (4), which exports pulse, wherein deep oscillation pulse voltage can be splashed in high power pulse magnetic control Radio source (4) work starting is opened, and is advantageously reduced the adverse effect of sparking plasma electric discharge, can also be opened in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, be conducive to next A stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, deep The oscillating impulse stage also can take up the entire pulse period, form deep oscillation pulse voltage mode, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is unipolarity multistage depth oscillating impulse that source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse, bias with the period The matching of power pulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, As shown in figure 4, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.

Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is unipolarity multistage depth oscillating impulse that source (4), which exports pulse, wherein deep oscillating impulse bias can be splashed in high power pulse magnetic control Radio source (4) work starting is opened, and is advantageously reduced the adverse effect of sparking plasma electric discharge, can also be opened in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, be conducive to next A stage discharge is gone on smoothly, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose not Together, same or different deep oscillation pulse voltage amplitude can also be used between each other, and the amplitude of deep oscillation pulse voltage is also Adjustable is different or phasic Chang amplitudes, then is the cooperation of grid bias power supply (1) output pulse, bias with the period The matching of power pulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, As shown in figure 4, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.

Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity pulse that source (4), which exports pulse, wherein the whole voltage magnitude of ending phase, advantageously reduces the accumulation of target surface potential, Spark phenomenon is eliminated, the electric discharge of next pulse is gone on smoothly, then is the cooperation of grid bias power supply (1) output pulse with the period, Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of bias straight tube is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil dress It sets power supply (10) and adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform coalignment (8) it controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) output pulse is bipolarity multiple-pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse wave with the period The matching of shape and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity monopole single hop depth oscillating impulse that source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity monopole single hop depth oscillating impulse that source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse magnetic It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to One stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang Amplitude deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then with week Phase is the cooperation that grid bias power supply (1) exports pulse, and grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform are whole The matching of several times, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation tool There are the multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity monopole multistage depth oscillating impulse that source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity monopole multistage depth oscillating impulse that source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse magnetic It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to One stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, The amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, can also go out in the negative pulse stage Now deep oscillating impulse deep oscillating impulse can also occurs in the positive pulse stage, then export pulse with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity the two poles of the earth single hop depth oscillating impulse that source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner bias straight tube, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens movable coil Installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), is matched and is filled by synchronous waveform It sets (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) while opening, high-power impulse magnetron sputtering electricity It is bipolarity the two poles of the earth single hop depth oscillating impulse that source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse magnetic It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to One stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, The amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias straight tube is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is bipolarity the two poles of the earth multistage depth oscillating impulse that power supply (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias straight tube is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is bipolarity the two poles of the earth multistage depth oscillating impulse that power supply (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse Magnetron sputtering power supply (4) work starting is opened, and the adverse effect of sparking plasma electric discharge is advantageously reduced, can also be in Between open, be conducive to improve plasma density, adjustment film deposition stress, can also open, be conducive in ending phase Next stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose not Together, the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, can also adopt between each other With same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage can also be adjusted to it is different or Phasic Chang amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high power arteries and veins The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 4, technical arrangement plan, Film deposition is carried out, the multilayer films with different stress, microstructure and element ratio, other and implementation are prepared Mode one is identical.

Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias straight tube is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias hose straightening device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth that power supply (4), which exports pulse, Oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage are deep Oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, two kinds of operating mode of bipolarity the two poles of the earth multistage depth oscillating impulse or The two or more combinations of person, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high power arteries and veins The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 4, technical arrangement plan, Film deposition is carried out, the multilayer films with different stress, microstructure and element ratio, other and implementation are prepared Mode one is identical.

Claims

1. a kind of combination field and the compound vacuum deposition method of liner bias straight tube, which is characterized in that the device includes bias Power supply (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control Sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), waveform are same Walk coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field dress Set (12), multi-stage magnetic field installation's power source (13), liner bias hose straightening device (14), liner grid bias power supply (15), sample stage (16) With vacuum chamber (17)；

In the device:

2. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias straight tube, feature It is, institute's use device further includes the pulse voltage and electric current that grid bias power supply kymographion (6) show that grid bias power supply (1) issues Waveform, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the arteries and veins of high-power impulse magnetron sputtering power supply (4) output Waveform is rushed, synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high-power impulse magnetron sputtering electricity are passed through Source (4) makes grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, out of phase and difference The matching of pulse width adjusts the output waveform of grid bias power supply (1), to compound from a kind of combination field and liner bias straight tube The plated film ion transmitted in vacuum deposition method is effectively attracted, to multi-stage magnetic field device (12), liner bias straight tube Transmission comes out the bulky grain in arc-plasma and carries out electric field inhibition in device (14) and movable coil device (9), in matrix The ratio of surface deposition film and control deposition targets element in the film is realized the adjusting of plasma energy and is possible to Remaining bulky grain defect carries out electric field repulsion removing.

3. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias straight tube, feature It is, which combines the waveform control of synchronous waveform coalignment (8), movable coil using single set or more set combinations The multiple types of device (9), multi-stage magnetic field device (12) and liner bias hose straightening device (14) combine, and realize the excellent of different wave The transmission path guidance for changing matching, multi-stage magnetic field, liner bias hose straightening device and movable coil magnetic field, it is indoor any in vacuum Position prepares pure metal film, the compound ceramic film of different element ratio, function film and has nanometer multilayer or ladder Spend the film of structure.

4. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias straight tube, feature It is, is first carried out using the pulsed bias power supply that high-power impulse magnetron sputtering power supply (4) carry out magnetron sputtering combination high voltage Ion implantation and deposition improves the binding force of film and matrix, then using single set or covers the device more and combine straight using tradition One or two kinds of above method combination of magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc is flowed, Apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece again, it is two or more heavy to realize The compound of product mode carries out film deposition, to prepare pure metal film, the compound ceramic film of different element ratios, function Film and film with nanometer multilayer or gradient-structure.

5. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias straight tube, feature It is, working gas selects argon gas or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen mix Close gas, come prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer multilayer or The film of gradient-structure.