CN109989003A - The arc ion plating of combination field and liner bias perforated baffle composite filter - Google Patents
The arc ion plating of combination field and liner bias perforated baffle composite filter Download PDFInfo
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- CN109989003A CN109989003A CN201711486353.7A CN201711486353A CN109989003A CN 109989003 A CN109989003 A CN 109989003A CN 201711486353 A CN201711486353 A CN 201711486353A CN 109989003 A CN109989003 A CN 109989003A
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- 229910010037 TiAlN Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The arc ion plating of combination field and liner bias perforated baffle composite filter, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field device.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias porous type retaining device and grid bias power supply, movable coil device and power supply, sample stage, grid bias power supply kymographion and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, it is adjusted using energy of the grid bias power supply to arc-plasma, the bulky grain defect in arc-plasma is eliminated by liner bias porous type retaining device and multi-stage magnetic field device and improves the efficiency of transmission in filter device, loss in a vacuum chamber is reduced, technological parameter is set, carries out film preparation.
Description
Technical field
The present invention relates to the arc ion platings of combination field and liner bias perforated baffle composite filter, belong to material table
Surface treatment technical field.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks
Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or
Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn
Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect
Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary
The problems such as pollution of thin film composition caused by sputtering, in conjunction with multi-stage magnetic field filter method and liner bias ladder pipe and perforated baffle group
The compound action for attaching together mechanical stop shielding and the biasing electric field attraction of setting own form contains to eliminate in arc-plasma
Bulky grain defect, while guaranteeing that arc-plasma passes through liner bias straight tube and perforated baffle group with higher efficiency of transmission
It attaches together to set and control with multi-stage magnetic field filter device, recycling movable coil device from multi-stage magnetic field device and liner bias ladder pipe
The transmission direction of the arc-plasma for transmitting out with perforated baffle combination unit in a vacuum chamber, realizes and appoints in vacuum chamber
The control and regulation of the film deposition and thin film composition on meaning position substrate work-piece surface, overcome due to vacuum chamber space and target source layout
Film caused by the limitation of deposition position caused by designing or base shape limit deposits problem of non-uniform, thoroughly removes from multistage
It is possible to remain in the arc-plasma for transmitting out in magnetic field device and liner bias straight tube and perforated baffle combination unit
Bulky grain defect, so that workpiece surface is adjusted ion energy in the case where applying back bias voltage, preparation is continuous, fine and close high-quality thin
Film, at the same realize to target elements content addition control in film, reduce the production cost using alloys target, improve electric arc etc. from
The efficiency of transmission of daughter, the deposition velocity for increasing film and bulky grain defect is decreased or even eliminated to film microstructure, continuous
The adverse effect of compact deposits and service performance proposes a kind of combination field and liner bias perforated baffle composite filter
Arc ion plating.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic
Field device (4), multi-stage magnetic field power supply (5), liner bias porous type retaining device (6), liner grid bias power supply (7), movable coil
Device (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), grid bias power supply kymographion (12)
With vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), and multi-stage magnetic field device (4), liner bias are porous
Mutually insulated between type retaining device (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage (11), sample
Sample platform (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13), connects arc electricity
The cathode output end in source (2), the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative
Pole connection can be determined according to output magnetic direction, and liner bias porous type retaining device (6) connects liner grid bias power supply (7)
Cathode output end, movable coil device (8) connects movable coil installation's power source by positive and negative anodes input terminal on flange port
(9), rheostat device (10) is connected with movable coil device (8), and access is opened with the circuit of movable coil installation's power source (9)
Open power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias porous type retaining device (6) can cooperate multi-stage magnetic field device (4) design diameter of baffle, hole type,
The spacing of size and baffle is attached between baffle by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for tearing open
De-assembly and cleaning pollutant, activity insulation assembly between liner bias porous type retaining device (6) and multi-stage magnetic field device (4)
Together, liner bias porous type retaining device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid nothing
The inside pipe wall of multi-stage magnetic field device (4) pollutes and is difficult to the problem of clearing up, liner bias porous type retaining device under liner plate state
(6) length of magnetic field at different levels of perforated baffle spacing and multi-stage magnetic field device (4) match, liner bias porous type retaining device
(6) outer diameter of perforated baffle is slightly less than the internal diameter of multi-stage magnetic field device (4)；Liner bias porous type retaining device (6) porous gear
Pore size, type in plate are selected according to different targets and technological parameter, pass through liner bias porous type retaining device
(6) the structure combination of the baffle diameter in perforated baffle, pore size, Change of types and baffle at different levels, may be implemented to big
The mechanical stop shielding of grain；
The material of multi-stage magnetic field device (4) and liner bias porous type retaining device (6) does not select the 304 of nonmagnetic, resistance to cleaning not
Become rusty Steel material, and multi-stage magnetic field device (4) determines length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias porous type retaining device (6) determine outer diameter, and foundation according to multi-stage magnetic field device (4) internal diameter
The topology layout for needing to select suitable thickness, the size in aperture, type and baffle at different levels, according to actual design parameter processing be
It can；
It opens liner grid bias power supply (7), liner bias porous type retaining device (6) keeps direct current, pulse, multiple-pulse, direct current
Pulse is compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type
Rate, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias porous type retaining device (6) carry out bulky grain
Attract, depositing ions are repelled, reduce loss of the arc-plasma in pipe in transmission process, reduction even is eliminated electricity
Bulky grain defect in arc plasma improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias
The voltage parameter of power supply (7) is -200 ~+200V, is that direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse
Power supply, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process to bulky grain defect
Periodical or continual and steady attraction is generated, it is porous by multi-stage magnetic field device (4) and liner bias to greatly reduce bulky grain
The probability of type retaining device (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
The arc-plasma come out from multi-stage magnetic field device (4) and liner bias porous type retaining device (6) transmission is made, activity is utilized
The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types,
Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase
Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and
Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection),
Circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher efficiency of transmission
Matrix surface is reached, the fast deposition of film is carried out；The output resistance of standardsizing rheostat device (10) realizes movable coil device
(8) the positive bias variation on, the electric field that positive bias generates may be implemented to keep off multi-stage magnetic field device (4) and liner bias porous type
The attraction of electronics and remaining bulky grain in the arc-plasma that transmission comes out in panel assembly (6), and then increase movable coil dress
The ion populations for setting the arc-plasma exported in (8) increase, and promote arc-plasma in movable coil device (8)
Efficiency of transmission eliminates remaining bulky grain defect；Movable coil device (8) selects low-resistance copper tube, the diameter of copper pipe, thickness
Degree and length are big according to the number of turns of movable coil device (8), coil channel diameter, coil shape, coil turn spacing, vacuum chamber
Small, arc-plasma transmission path and transmission range determine；The positive and negative anodes of movable coil installation's power source (9) are according to magnetic field
Intensity, direction and cooling system provide suitable electric current to movable coil device (8), and the input range of electric current is 0 ~ 2000A, protect
The stability and movable coil device (8) for demonstrate,proving entire vacuum system export suitable magnetic field, make arc-plasma according to activity
The path of coil device (8) setting reaches matrix surface while guarantee to remaining bulky grain removing with high efficiency of transmission,
Arc-plasma loss in vacuum chamber (13) is avoided, realizes the fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is lived using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device
Moving winding can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions),
The combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc of straight line, circular arc and straight line are (between three
Tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission path
It needs to be determined, realizes effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias
The further removing of remaining bulky grain defect in porous type retaining device reduces plasma in vacuum chamber transmission process
Loss, by the guidance in movable coil magnetic field, further increases the efficiency of transmission of arc-plasma and the deposition velocity of film,
The preparation of film can be realized in the optimum position of vacuum chamber, can also adjust the series connection of movable coil by rheostat device
Resistance value realizes adjustment to movable coil itself positive bias parameter, realize in arc-plasma electronics and remnants it is big
The attraction of particle, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining bulky grain defect, increase
The deposition velocity of film；B. multi-stage magnetic field filter device can guarantee that electric arc is transported in stablizing for target material surface by the constraint in magnetic field
It is dynamic, lasting arc-plasma is generated, and make arc-plasma in multi-stage magnetic field device by the magnetic line of force of multi-stage magnetic field
In high efficiency of transmission, also change arc-plasma and the motion path of bulky grain defect are come the separation both realized, further
Decrease or even eliminate the bulky grain defect in arc-plasma；C. liner bias porous type retaining device is straight by that can apply
Stream, pulse or the compound positive bias of DC pulse continue to bulky grain or periodically effectively attract, to depositing ions into
Row continues or periodically repels, and can also be vibrated by the bipolar pulse of positive back bias voltage, reduces plasma and passes in pipe
Loss during defeated further increases the efficiency of transmission of arc-plasma and the deposition velocity of film；D. liner bias is more
Pass retaining device can be realized using the type of baffle holes, aperture, pitch of holes to bulky grain defect by own form
Mechanical stop screen effect, the motion path for limiting bulky grain defect eliminates the bulky grain defect in arc-plasma, interior
The flexible disassembly of bias porous type retaining device is served as a contrast, cleaning is convenient, it is possible to prevente effectively from polluting after target replacement to liner baffle
The secondary sputtering of object causes the pollution of thin film composition；E. pulsed bias power supply is wide by adjusting pulse pattern, pulse amplitude, pulse
Degree and pulse frequency, using electric field inhibition repelling effect realize to remaining bulky grain defect carry out eliminate and to electric arc etc. from
The adjusting of daughter energy optimizes；F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter,
The pinning effect that energetic ion grows film is realized using the type of pulsed bias, amplitude, pulse width and frequency, is improved thin
The texture and stress state of film growth, improve bond strength, improve the service performance of film；G. by utilizing combination field
Film prepared by arc ion plating with liner bias perforated baffle composite filter, the bulky grain eliminated in film lack
It falls into, reduces loss of the arc-plasma in filter device and vacuum chamber, improve the service efficiency of arc-plasma,
It realizes the quick preparation of film, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase
The service performance of film.
The arc ion plating of combination field and liner bias perforated baffle composite filter, the device can singly cover or more
Set combination, and combine a variety of of multi-stage magnetic field device (4), liner bias porous type retaining device (6) and movable coil device (8)
Type combination, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer
Or the film of gradient-structure, the device can also be covered using single set or mostly and combined using Traditional DC magnetron sputtering, pulsed magnetic
Control sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or the compound biasing device of DC pulse, it is real
The compound of existing two or more depositional mode carry out film deposition, prepares pure metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the assembly letter of the arc ion plating of combination field of the present invention and liner bias perforated baffle composite filter
Figure；Fig. 2 is 7 kinds of topology layouts of movable coil；Fig. 3 is the structure and 4 kinds of exemplary porous of liner bias porous type retaining device
Baffle schematic diagram.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1,2 and 3, present embodiment combination field with it is interior
The arc ion plating institute use device for serving as a contrast bias perforated baffle composite filter includes grid bias power supply (1), arc power (2), electric arc
Ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias porous type retaining device (6), liner
Grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), partially
Voltage source kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), and multi-stage magnetic field device (4), liner bias are porous
Mutually insulated between type retaining device (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage (11), sample
Sample platform (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13), connects arc electricity
The cathode output end in source (2), the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative
Pole connection can be determined according to output magnetic direction, and liner bias porous type retaining device (6) connects liner grid bias power supply (7)
Cathode output end, movable coil device (8) connects movable coil installation's power source by positive and negative anodes input terminal on flange port
(9), external water-cooling circulating system and power supply total control switch are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias porous type retaining device (6) can cooperate multi-stage magnetic field device (4) design diameter of baffle, hole type,
The spacing of size and baffle is attached between baffle by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for tearing open
De-assembly and cleaning pollutant, activity insulation assembly between liner bias porous type retaining device (6) and multi-stage magnetic field device (4)
Together, liner bias porous type retaining device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid nothing
The inside pipe wall of multi-stage magnetic field device (4) pollutes and is difficult to the problem of clearing up, liner bias porous type retaining device under liner plate state
(6) length of magnetic field at different levels of perforated baffle spacing and multi-stage magnetic field device (4) match, liner bias porous type retaining device
(6) outer diameter of perforated baffle is slightly less than the internal diameter of multi-stage magnetic field device (4)；Liner bias porous type retaining device (6) porous gear
Pore size, type in plate are selected according to different targets and technological parameter, pass through liner bias porous type retaining device
(6) the structure combination of the baffle diameter in perforated baffle, pore size, Change of types and baffle at different levels, may be implemented to big
The mechanical stop shielding of grain；
The material of multi-stage magnetic field device (4) and liner bias porous type retaining device (6) does not select the 304 of nonmagnetic, resistance to cleaning not
Become rusty Steel material, and multi-stage magnetic field device (4) determines length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias porous type retaining device (6) determine outer diameter, and foundation according to multi-stage magnetic field device (4) internal diameter
The topology layout for needing to select suitable thickness, the size in aperture, type and baffle at different levels, according to actual design parameter processing be
It can；
It opens liner grid bias power supply (7), liner bias porous type retaining device (6) keeps direct current, pulse, multiple-pulse, direct current
Pulse is compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type
Rate, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias porous type retaining device (6) carry out bulky grain
Attract, depositing ions are repelled, reduce loss of the arc-plasma in pipe in transmission process, reduction even is eliminated electricity
Bulky grain defect in arc plasma improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias
The voltage parameter of power supply (7) is -200 ~+200V, is that direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse
Power supply, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process to bulky grain defect
Periodical or continual and steady attraction is generated, it is porous by multi-stage magnetic field device (4) and liner bias to greatly reduce bulky grain
The probability of type retaining device (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), realize to magnetic direction and magnetic
The adjusting of field intensity, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) come control from
The arc-plasma that multi-stage magnetic field device (4) and liner bias porous type retaining device (6) transmission come out, utilizes movable coil
The cooperation of shape and the magnetic field magnetic line layout, direction of device, movable coil can be using 90 degree of classical flexure types, can also be with
Using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), directly
Line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and tangent of straight line, circular arc and straight line
Combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), it is therein
Circular arc and straight line portion are determined according to the needs of spatial position and transmission path, it is made to reach base with higher efficiency of transmission
Body surface face carries out the fast deposition of film；Rheostat device (10) adjusts output resistance, realizes on movable coil device (8)
Positive bias variation, the electric field that positive bias generates may be implemented to multi-stage magnetic field device (4) and liner bias porous type retaining device
(6) attraction of electronics and remaining bulky grain in the arc-plasma that transmission comes out in, and then increase in movable coil device (8)
The ion populations of the arc-plasma of output increase, and promote transmission effect of the arc-plasma in movable coil device (8)
Rate eliminates remaining bulky grain defect；Movable coil device (8) selects low-resistance copper tube, diameter, thickness and the length of copper pipe
The number of turns, coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, electric arc of the degree according to movable coil device (8)
The transmission path and transmission range of plasma determines；The positive and negative anodes of movable coil installation's power source (9) are according to magnetic field strength, side
Suitable electric current is provided to movable coil device (8) to cooling system, the input range of electric current is 0 ~ 2000A, is guaranteed entire
The stability and movable coil device (8) of vacuum system export suitable magnetic field, fill arc-plasma according to movable coil
The path of (8) setting is set, guarantees to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoids electricity
Arc plasma loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic
Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios
Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of combination field and liner bias perforated baffle composite filter, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, is realized to the effective of arc-plasma transmission path
Control, the further removing to remaining bulky grain defect from multi-stage magnetic field device and liner bias porous type retaining device,
It reduces loss of the plasma in vacuum chamber transmission process and electric arc etc. is further increased by the guidance in movable coil magnetic field
The efficiency of transmission of gas ions and the deposition velocity of film are overcome and deposit position caused by being designed due to vacuum chamber space and target source layout
It sets limitation or base shape limits caused film deposition problem of non-uniform, can realize film in the optimum position of vacuum chamber
Preparation, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil itself positive bias
The adjustment of parameter, realizes the attraction to electronics and remaining bulky grain in arc-plasma, and Lai Tisheng arc-plasma exists
Efficiency of transmission in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；It is filtered using multi-stage magnetic field
Device guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and pass through by magnetically confined
The magnetic line of force of multi-stage magnetic field makes high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc-plasma and
The motion path of bulky grain defect is further reduced the bulky grain even being eliminated in arc-plasma come the separation both realized
Defect；Apply direct current, pulse or the compound positive bias of DC pulse using liner bias porous type retaining device, to bulky grain into
Row continues or periodically effectively attracts, and effectively avoids bulky grain problem caused by low melting material, carries out to depositing ions
Continue or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduces plasma and transmitted in pipe
Loss in the process further increases the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias porous type
Retaining device can be combined by own form using the structure between the type of baffle holes, aperture, pitch of holes and baffle at different levels,
It realizes the mechanical stop screen effect to bulky grain defect, limits the motion path of bulky grain defect to eliminate arc-plasma
In bulky grain defect, reduce bulky grain by porous type retaining device reach deposited samples surface probability；Liner bias is more
Fast quick-detach installation may be implemented in pass retaining device, and the inside pipe wall pollution for avoiding multi-stage magnetic field device under linerless board status is clear
The problem of reason, the flexible disassembly of liner bias porous type retaining device, cleaning is convenient, it is possible to prevente effectively from after target replacement, it is right
The secondary sputtering of liner baffle pollutant causes the pollution of thin film composition；Pulsed bias power supply is by adjusting pulse pattern, pulse
Amplitude, pulse width and pulse frequency eliminate remaining bulky grain defect using the inhibition repelling effect realization of electric field
Adjusting optimization with to arc-plasma energy, improves the section Potential Distributing of plasma near matrix, sufficiently attracts electricity
Arc plasma realizes the fast deposition of film to workpiece motion s；The microstructure and properties of prepared film can pass through arteries and veins
It rushes bias parameters to be adjusted, realizes that energetic ion is raw to film using the type of pulsed bias, amplitude, pulse width and frequency
Long pinning effect improves the texture and stress state of film growth, improves bond strength, improves the usability of film
Energy；Also stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously, is conducive to high ionization
Rate ion prepares the compound ceramic film of different element ratios, function film, polynary in the chemosynthesis reaction of workpiece surface
Multilayer, superlattices and film or pure metal film with gradient-structure；By utilizing combination field and the porous gear of liner bias
Film prepared by the arc ion plating of plate composite filter eliminates the bulky grain defect in film, reduce electric arc etc. from
Loss of the daughter in filter device and vacuum chamber avoids liner baffle residue caused by different targets are replaced to film
Pollution, improves the service efficiency of arc-plasma, realizes the quick preparation of film, optimize electric arc etc. using pulsed bias
The Energy distribution of gas ions, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase thin
The service performance of film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind
Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece
Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, combination field is inclined with liner
The arc ion plating connection for pressing perforated baffle composite filter, is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (4) is opened liner grid bias power supply (7), and liner bias porous type retaining device (6) keeps direct current positive bias, is opened
It opens grid bias power supply (1), opens movable coil installation's power source (9) and adjust movable coil device (8), standardsizing rheostat device (10)
Output resistance, technical arrangement plan carry out film deposition, and preparing has different stress, microstructure and element ratio
Multilayer films, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, combination field is inclined with liner
The arc ion plating connection for pressing perforated baffle composite filter, is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (4) is opened liner grid bias power supply (7), and liner bias porous type retaining device (6) keeps direct current positive bias, is opened
It opens grid bias power supply (1), opens movable coil installation's power source (9) and adjust movable coil device (8), standardsizing rheostat device (10)
Output resistance, technical arrangement plan carry out film deposition, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, tradition electricity
The combination of one or two kinds of above method of arc ion plating and pulsed cathode arc, then application Dc bias, pulse are inclined on workpiece
Pressure, the compound bias of DC pulse or bipolar pulse biasing device carry out film deposition, other are identical as embodiment two.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with
On arc ion plating target source (3), multi-stage magnetic field device (4), liner bias porous type retaining device (6) and movable coil device
(8) arc ion plating of the combination field and liner bias perforated baffle composite filter that combine is carried out with various pure metal elements
With multicomponent alloy material be target film deposit, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc from
Son plating and pulsed cathode arc one or two kinds of above method combine, then on workpiece apply Dc bias, pulsed bias or
The compound biasing device of DC pulse carries out film deposition, and preparing has the more of different stress, microstructure and element ratio
Layer structural membrane.
Claims (5)
1. the arc ion plating of combination field and liner bias perforated baffle composite filter, which is characterized in that the device includes
Grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner
Bias porous type retaining device (6), movable coil device (8), movable coil installation's power source (9), becomes liner grid bias power supply (7)
Hinder device device (10) sample stage (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), and multi-stage magnetic field device (4), liner bias are porous
Mutually insulated between type retaining device (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage (11), sample
Sample platform (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13), connects arc electricity
The cathode output end in source (2), the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output end of multi-stage magnetic field power supply (5), positive and negative
Pole connection is determined according to output magnetic direction, and liner bias porous type retaining device (6) is connecing liner grid bias power supply (7) just
Pole output end, movable coil device (8) connect movable coil installation's power source (9) by the positive and negative anodes input terminal on flange port, become
Resistance device device (10) is connected with movable coil device (8), and access opens power supply with the circuit of movable coil installation's power source (9)
Total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12) to 0.01Pa~10Pa, grid bias power supply (1) be direct current,
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width
It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1
~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias porous type retaining device (6) cooperates multi-stage magnetic field device (4) to design the diameter of baffle, the type in hole, size
It with the spacing of baffle, is attached by the screw bolt and nut of magnetism-free stainless steel between baffle and is fixed with position, be convenient for dismantling group
Dress and cleaning pollutant, activity insulation is assemblied in one between liner bias porous type retaining device (6) and multi-stage magnetic field device (4)
It rises, liner bias porous type retaining device (6) apparent surface pollution level dismantles cleaning and installation in time, avoids linerless board status
The inside pipe wall of lower multi-stage magnetic field device (4) is polluted and is difficult to the problem of clearing up, liner bias porous type retaining device (6) it is porous
Baffle spacing and the length of magnetic field at different levels of multi-stage magnetic field device (4) match, liner bias porous type retaining device (6) porous gear
The outer diameter of plate is slightly less than the internal diameter of multi-stage magnetic field device (4)；Aperture in liner bias porous type retaining device (6) perforated baffle
Size, type are selected according to different targets and technological parameter, pass through liner bias porous type retaining device (6) perforated baffle
In baffle diameter, pore size, Change of types and baffle at different levels structure combination, realize the mechanical stop screen to bulky grain
It covers；
The material of multi-stage magnetic field device (4) and liner bias porous type retaining device (6) does not select the 304 of nonmagnetic, resistance to cleaning not
Become rusty Steel material, and multi-stage magnetic field device (4) determines length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias porous type retaining device (6) determine outer diameter, and foundation according to multi-stage magnetic field device (4) internal diameter
The topology layout for needing to select suitable thickness, the size in aperture, type and baffle at different levels, according to actual design parameter processing be
It can；
It opens liner grid bias power supply (7), liner bias porous type retaining device (6) keeps direct current, pulse, multiple-pulse, direct current
Pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are by adjusting pulse frequency
Rate, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias porous type retaining device (6) carry out bulky grain
Attract, depositing ions are repelled, reduce loss of the arc-plasma in pipe in transmission process, reduction even is eliminated electricity
Bulky grain defect in arc plasma improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias
The voltage parameter of power supply (7) is -200 ~+200V, is that direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse
Power supply, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process to bulky grain defect
Periodical or continual and steady attraction is generated, it is porous by multi-stage magnetic field device (4) and liner bias to greatly reduce bulky grain
The probability of type retaining device (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
The arc-plasma come out from multi-stage magnetic field device (4) and liner bias porous type retaining device (6) transmission is made, activity is utilized
The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types,
Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase
Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and
Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection),
Circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher efficiency of transmission
Matrix surface is reached, the fast deposition of film is carried out；The output resistance of standardsizing rheostat device (10) realizes movable coil device
(8) the positive bias variation on, the electric field that positive bias generates may be implemented to keep off multi-stage magnetic field device (4) and liner bias porous type
The attraction of electronics and remaining bulky grain in the arc-plasma that transmission comes out in panel assembly (6), and then increase movable coil dress
The ion populations for setting the arc-plasma exported in (8) increase, and promote arc-plasma in movable coil device (8)
Efficiency of transmission eliminates remaining bulky grain defect；Movable coil device (8) selects low-resistance copper tube, the diameter of copper pipe, thickness
Degree and length are big according to the number of turns of movable coil device (8), coil channel diameter, coil shape, coil turn spacing, vacuum chamber
Small, arc-plasma transmission path and transmission range determine；The positive and negative anodes of movable coil installation's power source (9) are according to magnetic field
Intensity, direction and cooling system provide suitable electric current to movable coil device (8), and the input range of electric current is 0 ~ 2000A, protect
The stability and movable coil device (8) for demonstrate,proving entire vacuum system export suitable magnetic field, make arc-plasma according to activity
The path of coil device (8) setting reaches matrix surface while guarantee to remaining bulky grain removing with high efficiency of transmission,
Arc-plasma loss in vacuum chamber (13) is avoided, overcomes and is deposited caused by being designed due to vacuum chamber space and target source layout
Film caused by position limitation or base shape limit deposits problem of non-uniform, realizes the fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
2. the arc ion plating of combination field according to claim 1 and liner bias perforated baffle composite filter,
It is characterized in that, institute's use device further includes grid bias power supply kymographion (12), the pulse voltage that display grid bias power supply (1) issues
And current waveform, by adjusting the output waveform of grid bias power supply (1), to compound from combination field and liner bias perforated baffle
The plated film ion transmitted in the arc ion plating of filtering is effectively attracted, and the deposition and control of sample surfaces film are carried out
The ratio of deposition targets element in the film, realize plasma energy adjusting and be possible to remaining bulky grain defect into
Row electric field repulsion is removed.
3. the arc ion plating of combination field according to claim 1 and liner bias perforated baffle composite filter,
It is characterized in that, which combines multi-stage magnetic field device (4), liner bias porous type baffle using single set or more set combinations
The multiple types of device (6) and movable coil device (8) combination, to prepare the compound of pure metal film, different element ratios
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure.
4. the arc ion plating of combination field according to claim 1 and liner bias perforated baffle composite filter,
It is characterized in that, using single set or covers the device more and combines using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc
The combination of one or two kinds of above method of ion plating and pulsed cathode arc, then apply Dc bias, pulsed bias on workpiece
Or DC pulse compound biasing device, realize that the compound of two or more depositional mode carries out film deposition, to make
Standby pure metal film, the compound ceramic film of different element ratios, function film and with nanometer multilayer or gradient-structure
Film.
5. the arc ion plating of combination field according to claim 1 and liner bias perforated baffle composite filter,
It is characterized in that, it is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer more
The film of layer or gradient-structure.
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| CN201711486353.7A CN109989003A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner bias perforated baffle composite filter |
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| CN201711486353.7A CN109989003A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner bias perforated baffle composite filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113975907A (en) * | 2021-09-30 | 2022-01-28 | 国网江苏省电力有限公司电力科学研究院 | Filtering module, measuring method thereof and gas sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20020067710A (en) * | 2001-02-17 | 2002-08-24 | 한국과학기술연구원 | A Metal Layer Evaporation Apparatus for Shielding Electric-Magnetic Wave and a Method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113975907A (en) * | 2021-09-30 | 2022-01-28 | 国网江苏省电力有限公司电力科学研究院 | Filtering module, measuring method thereof and gas sensor |
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