CN109989022A - The arc ion plating of combination field and liner conical pipe and straight tube composite filter - Google Patents
The arc ion plating of combination field and liner conical pipe and straight tube composite filter Download PDFInfo
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- CN109989022A CN109989022A CN201711491622.9A CN201711491622A CN109989022A CN 109989022 A CN109989022 A CN 109989022A CN 201711491622 A CN201711491622 A CN 201711491622A CN 109989022 A CN109989022 A CN 109989022A
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- power supply
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- 229910010037 TiAlN Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The arc ion plating of combination field and liner conical pipe and straight tube composite filter, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field filter device.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias conical pipe and straight tube combination unit and grid bias power supply, movable coil device and power supply, sample stage, grid bias power supply kymographion and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, the energy of arc-plasma is adjusted in grid bias power supply, liner bias conical pipe and straight tube combination unit and multi-stage magnetic field device eliminate the bulky grain defect in arc-plasma and improve its efficiency of transmission in filter device, loss in a vacuum chamber is reduced, setting parameter prepares film.
Description
Technical field
The present invention relates to the arc ion platings of combination field and liner conical pipe and straight tube composite filter, belong to material table
Surface treatment technical field.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks
Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or
Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn
Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect
Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary
It the problems such as pollution of thin film composition caused by sputtering, is attached together in conjunction with multi-stage magnetic field filter method and liner bias conical pipe with straight tube group
The compound action that the constraint and biasing electric field for setting own form attract eliminates the bulky grain defect contained in arc-plasma,
Guarantee that arc-plasma passes through liner bias conical pipe and straight tube combination unit and multistage magnetic with higher efficiency of transmission simultaneously
Field filter device recycles the control of movable coil device to combine the unit from multi-stage magnetic field device and liner bias conical pipe and straight tube
The transmission direction of the arc-plasma that transmission comes out in a vacuum chamber, is realized to substrate work-piece surface in any position in vacuum chamber
Film deposition and thin film composition control and regulation, overcome deposition position caused by designing due to vacuum chamber space and target source layout
Film caused by limitation or base shape limit deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field device and liner bias
It is possible to remaining bulky grain defect in the arc-plasma for transmitting out in conical pipe and straight tube combination unit, makes workpiece table
Face adjusts ion energy, the high-quality thin-film that preparation is continuous, fine and close in the case where applying back bias voltage, while realizing to target in film
Material constituent content addition control, reduce using alloys target production cost, improve arc-plasma efficiency of transmission, increase it is thin
The deposition velocity of film and decrease or even eliminate bulky grain defect to film microstructure, continuous compact deposits and service performance not
Benefit influences, and proposes the arc ion plating of a kind of combination field and liner conical pipe and straight tube composite filter.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic
Field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe and straight tube combination unit (6), are lived at liner grid bias power supply (7)
Moving-wire coil apparatus (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), grid bias power supply waveform oscillography
Device (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and straight tube combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage
(11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13),
The cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output of multi-stage magnetic field power supply (5)
End, positive and negative anodes connection can according to output magnetic direction be determined, liner bias conical pipe and straight tube combination unit (6) connect in
The cathode output end of grid bias power supply (7) is served as a contrast, movable coil device (8) connects active line by the positive and negative anodes input terminal on flange port
Coil apparatus power supply (9), rheostat device (10) are connected with movable coil device (8), access and movable coil installation's power source (9)
In circuit, power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and straight tube combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3 grades or 4 grades etc.
A variety of hierarchical structures and inlet and outlet layout, it is solid by non-magnetic rivet interlacement between conical pipes and straight tube or conical pipe at different levels
Fixed, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe is interior with straight tube combination unit (6) inletD IntoGreater than electricity
The outer diameter in arc ion plating target source (3), entire outer diameter are less than the internal diameter of multi-stage magnetic field device (4), the internal diameter in exitD OutIn conjunction with dress
Combination, technological parameter and target for setting etc. determine that liner bias conical pipe and straight tube combine the unit (6) and multi-stage magnetic field device
(4) activity insulation is assembled together between, liner bias conical pipe and straight tube combination unit (6) can with apparent surface pollution level and
When disassembly cleaning and installation, avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and be difficult to clear up ask
Topic, and thin film composition is caused to the secondary sputtering of multi-stage magnetic field device inner wall surface pollutant after effectively target being avoided to replace
Pollution；The length of liner bias conical pipe and straight tube combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), according to not
With the allocation plan of target and technological parameter selection liner bias conical pipe and straight tube combination unit (6), realizes and utilize from figure
Shape constrains the scavenging effect to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determine length, internal-and external diameter, thickness according to the diameter of target, cooling, transmission range
Degree, magnetic field the number of turns and direction, liner bias conical pipe and straight tube combination unit (6) are according to multi-stage magnetic field device (4) internal diameter and electricity
The outer diameter in arc ion plating target source (3) determines liner bias conical pipe and straight tube combination unit (6) the inlet and outlet outer diameter of position and interior
Diameter, liner bias conical pipe and straight tube combination unit (6) need to select suitable thickness according to length and rigidity, according to actually setting
Count parameter processing；
It opens liner grid bias power supply (7), liner bias conical pipe and straight tube combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are adjustable
The adjustment of pulse frequency, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe and straight tube combination unit (6)
Bulky grain is attracted, depositing ions are repelled, reduces loss of the arc-plasma in pipe in transmission process, drop
The low bulky grain defect even being eliminated in arc-plasma improves the efficiency of transmission of arc-plasma and the deposition speed of film
Degree, the voltage parameter of liner grid bias power supply (7) is -200 ~+200V, compound for direct current, pulse, multiple-pulse, DC pulse
Or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process
Periodical or continual and steady attraction is generated to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device (4) and
The probability of liner bias conical pipe and straight tube combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
Make the arc-plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) transmission, benefit
With the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be curved using classical 90 degree
It is curved, it can also be using straight line and bending, bending and the Straight Combination (magnetic line of force phase of the magnetic line of force of straight line portion and bending part
Cut, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), (three sections of the combination of straight line, circular arc and straight line
Intersection and tangent combination) and circular arc, straight line and circular arc the typical coil knot such as combination (tangent between three and intersection)
Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher
Efficiency of transmission reaches matrix surface, overcomes deposition position limitation or base caused by designing due to vacuum chamber space and target source layout
Film caused by shape limits deposits problem of non-uniform, carries out the fast deposition of film；Standardsizing rheostat device (10) it is defeated
Resistance out, realizes the positive bias variation on movable coil device (8), and the electric field that positive bias generates may be implemented to fill multi-stage magnetic field
It is big to set electronics and remnants in the arc-plasma that transmission comes out in (4) and liner bias conical pipe and straight tube combination unit (6)
The attraction of particle, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and promote electric arc
Efficiency of transmission of the plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device (8) choosing
Select low-resistance copper tube, diameter, thickness and the length of copper pipe according to the number of turns of movable coil device (8), coil channel diameter,
Coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；Active line
The positive and negative anodes of coil apparatus power supply (9) provide suitable electricity to movable coil device (8) according to magnetic field strength, direction and cooling system
Stream, the input range of electric current are 0 ~ 2000A, guarantee that the stability of entire vacuum system and movable coil device (8) output are suitable
Magnetic field, the path transmission for setting arc-plasma according to movable coil device (8) guarantees to remove remaining bulky grain
While matrix surface reached with high efficiency of transmission, avoid arc-plasma loss in vacuum chamber (13), realize film
Fast deposition；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is lived using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device
Moving winding can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions),
The combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc of straight line, circular arc and straight line are (between three
Tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission path
It needs to be determined, realizes effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias
The further removing of remaining bulky grain defect, reduces plasma and is transmitted across in vacuum chamber in conical pipe and straight tube combination unit
Loss in journey further increases the efficiency of transmission of arc-plasma and sinking for film by the guidance in movable coil magnetic field
Product speed overcomes deposition position limitation caused by designing due to vacuum chamber space and target source layout or base shape limitation to cause
Film deposit problem of non-uniform, can the optimum position of vacuum chamber realize film preparation, can also be filled by rheostat
Set, adjust the series impedance of movable coil, realize the adjustment to movable coil itself positive bias parameter, realize to electric arc etc. from
The attraction of electronics and remaining bulky grain in daughter, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil are eliminated
Remaining bulky grain defect, increases the deposition velocity of film；B. multi-stage magnetic field filter device can be guaranteed by the constraint in magnetic field
Electric arc generates lasting arc-plasma in the stable motion of target material surface, and makes electric arc by the magnetic line of force of multi-stage magnetic field
High efficiency of transmission of the plasma in multi-stage magnetic field device, also change arc-plasma and the motion path of bulky grain defect are come
The separation for realizing the two, is further reduced the bulky grain defect even being eliminated in arc-plasma；C. liner bias conical pipe
With straight tube combination unit by the way that direct current, pulse or the compound positive bias of DC pulse can be applied, bulky grain continue or
Periodically effectively attract, depositing ions continue or periodically repel, the bipolarity of positive back bias voltage can also be passed through
Impulse hunting reduces loss of the plasma in pipe in transmission process, further increases the efficiency of transmission of arc-plasma
With the deposition velocity of film；D. liner bias conical pipe and straight tube combination unit can utilize multi-stage taper by own form
The mechanical stop screen effect to bulky grain defect is realized in multiple combinations and internal diameter the outer diameter variation of pipe and straight tube, limits bulky grain
The motion path of defect eliminates the bulky grain defect in arc-plasma, liner bias conical pipe and straight tube combination unit
Flexibly disassembly, cleaning is convenient, it is possible to prevente effectively from causing to the secondary sputtering of liner apparatus surface pollutant thin after target replacement
The pollution of film component；E. pulsed bias power supply utilizes by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
The inhibition repelling effect of electric field, which is realized, eliminate to remaining bulky grain defect and excellent to the adjusting of arc-plasma energy
Change；F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize the class of pulsed bias
Type, amplitude, pulse width and frequency realize the pinning effect that energetic ion grows film, improve the texture of film growth
And stress state, bond strength is improved, the service performance of film is improved；G. by using combination field and liner conical pipe and directly
Film prepared by the arc ion plating of pipe composite filter eliminates the bulky grain defect in film, reduce electric arc etc. from
Loss of the daughter in filter device and vacuum chamber, improves the service efficiency of arc-plasma, realizes the quick system of film
It is standby, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to the service performance for further increasing film.
The arc ion plating of combination field and liner conical pipe and straight tube composite filter, the device can singly cover or more
Set combination, and combine multi-stage magnetic field device (4), liner bias conical pipe and straight tube combination unit (6) and movable coil device (8)
Multiple types combination, received to prepare pure metal film, the compound ceramic film of different element ratio, function film and having
The film of rice multilayer or gradient-structure, can also using single set or cover more the device and combine using Traditional DC magnetron sputtering,
Pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or the compound bias of DC pulse
Device realizes that the compound of two or more depositional mode carries out film deposition, prepares pure metal film, different elements
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure of ratio.
Detailed description of the invention
Fig. 1 is the assembly letter of the arc ion plating of combination field of the present invention and liner conical pipe and straight tube composite filter
Figure；Fig. 2 is 7 kinds of topology layouts of movable coil；Fig. 3 is the structure diagram of liner bias conical pipe and straight tube combination unit.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1,2 and 3, present embodiment combination field with it is interior
The arc ion plating institute use device for serving as a contrast conical pipe and straight tube composite filter includes grid bias power supply (1), arc power (2), electric arc
Ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe and straight tube combination unit
(6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample stage
(11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and straight tube combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage
(11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13),
The cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output of multi-stage magnetic field power supply (5)
End, positive and negative anodes connection can according to output magnetic direction be determined, liner bias conical pipe and straight tube combination unit (6) connect in
The cathode output end of grid bias power supply (7) is served as a contrast, movable coil device (8) connects active line by the positive and negative anodes input terminal on flange port
Coil apparatus power supply (9) opens external water-cooling circulating system and power supply total control switch；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and straight tube combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3 grades or 4 grades etc.
A variety of hierarchical structures and inlet and outlet layout, it is solid by non-magnetic rivet interlacement between conical pipes and straight tube or conical pipe at different levels
Fixed, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe is interior with straight tube combination unit (6) inletD IntoGreater than electricity
The outer diameter in arc ion plating target source (3), entire outer diameter are less than the internal diameter of multi-stage magnetic field device (4), the internal diameter in exitD OutIn conjunction with dress
Combination, technological parameter and target for setting etc. determine that liner bias conical pipe and straight tube combine the unit (6) and multi-stage magnetic field device
(4) activity insulation is assembled together between, liner bias conical pipe and straight tube combination unit (6) can with apparent surface pollution level and
When disassembly cleaning and installation, avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and be difficult to clear up ask
Topic, and thin film composition is caused to the secondary sputtering of multi-stage magnetic field device inner wall surface pollutant after effectively target being avoided to replace
Pollution；The length of liner bias conical pipe and straight tube combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), according to not
With the allocation plan of target and technological parameter selection liner bias conical pipe and straight tube combination unit (6), realizes and utilize from figure
Shape constrains the scavenging effect (as shown in Figure 3) to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determine length, internal-and external diameter, thickness according to the diameter of target, cooling, transmission range
Degree, magnetic field the number of turns and direction, liner bias conical pipe and straight tube combination unit (6) are according to multi-stage magnetic field device (4) internal diameter and electricity
The outer diameter in arc ion plating target source (3) determines liner bias conical pipe and straight tube combination unit (6) the inlet and outlet outer diameter of position and interior
Diameter, liner bias conical pipe and straight tube combination unit (6) need to select suitable thickness according to length and rigidity, according to actually setting
Count parameter processing；
It opens liner grid bias power supply (7), liner bias conical pipe and straight tube combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are adjustable
The adjustment of pulse frequency, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe and straight tube combination unit (6)
Bulky grain is attracted, depositing ions are repelled, reduces loss of the arc-plasma in pipe in transmission process, drop
The low bulky grain defect even being eliminated in arc-plasma improves the efficiency of transmission of arc-plasma and the deposition speed of film
Degree, the voltage parameter of liner grid bias power supply (7) is -200 ~+200V, compound for direct current, pulse, multiple-pulse, DC pulse
Or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process
Periodical or continual and steady attraction is generated to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device (4) and
The probability of liner bias conical pipe and straight tube combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), realize to magnetic direction and magnetic
The adjusting of field intensity, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) come control from
The arc-plasma that multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) transmission come out, utilizes work
The cooperation (as shown in Figs. 1-2) of shape and the magnetic field magnetic line layout, direction of moving-wire coil apparatus, movable coil can be using classics
90 degree of flexure types, can also using straight line and bending, be bent and Straight Combination (magnetic line of force of straight line portion and bending part
The magnetic line of force is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the group of straight line, circular arc and straight line
It is typical to close (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) etc.
Loop construction combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, make its with
Higher efficiency of transmission reaches matrix surface, and deposition position caused by designing due to vacuum chamber space and target source layout is overcome to limit
Or base shape limits caused film and deposits problem of non-uniform, carries out the fast deposition of film；Rheostat device (10) is adjusted
Output resistance is saved, realizes the positive bias variation on movable coil device (8), the electric field that positive bias generates may be implemented to multistage magnetic
Electronics and residual in the arc-plasma that transmission comes out in field device (4) and liner bias conical pipe and straight tube combination unit (6)
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device
(8) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (8) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；It is living
It is suitable that the positive and negative anodes of moving winding installation's power source (9) are provided according to magnetic field strength, direction and cooling system to movable coil device (8)
Electric current, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil device (8) output of entire vacuum system
Suitable magnetic field, the path transmission for setting arc-plasma according to movable coil device (8) guarantee to remaining bulky grain
Matrix surface is reached with high efficiency of transmission while removing, arc-plasma loss in vacuum chamber (13) is avoided, realizes
The fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic
Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios
Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of combination field and liner conical pipe and straight tube composite filter utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, is realized to the effective of arc-plasma transmission path
Control, to the further of remaining bulky grain defect from multi-stage magnetic field device and liner bias conical pipe and straight tube combination unit
It removes, reduces loss of the plasma in vacuum chamber transmission process and electricity is further increased by the guidance in movable coil magnetic field
The efficiency of transmission of arc plasma and the deposition velocity of film are overcome and are sunk caused by being designed due to vacuum chamber space and target source layout
Film caused by the limitation of product position or base shape limit deposits problem of non-uniform, can realize in the optimum position of vacuum chamber
The preparation of film can also adjust the series impedance of movable coil by rheostat device, realize to movable coil itself just
The attraction to electronics and remaining bulky grain in arc-plasma, Lai Tisheng arc plasma are realized in the adjustment of bias parameters
Efficiency of transmission of the body in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Utilize multi-stage magnetic field
Filter device guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma by magnetically confined, and
Make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc plasma by the magnetic line of force of multi-stage magnetic field
Body and the motion path of bulky grain defect come the separation both realized, be further reduced even be eliminated it is big in arc-plasma
Grain defect；Apply direct current, pulse or the compound positive bias of DC pulse using liner bias conical pipe and straight tube combination unit,
Bulky grain continue or is periodically effectively attracted, bulky grain problem caused by low melting material is effectively avoided, to heavy
Product ion continue or periodically repels, and can also be vibrated by the bipolar pulse of positive back bias voltage, reduces plasma
Loss in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition velocity of film, liner
Bias conical pipe and straight tube combination unit can utilize the multiple combinations and internal diameter of multi-stage taper pipe and straight tube by own form
The mechanical stop screen effect to bulky grain defect is realized in outer diameter variation, limits the motion path of bulky grain defect to eliminate electric arc
Bulky grain defect in plasma reduces bulky grain by liner bias conical pipe and straight tube combination unit and reaches deposited samples
The probability on surface；Liner bias conical pipe and straight tube combination unit may be implemented fast quick-detach and install, and cleaning is convenient, avoids nothing
The inside pipe wall of multi-stage magnetic field device pollutes the problem of cleaning under liner plate state, after can also effectively avoiding target from replacing, to liner
The secondary sputtering of apparatus surface pollutant causes the pollution of thin film composition；Pulsed bias power supply is by adjusting pulse pattern, pulse
Amplitude, pulse width and pulse frequency eliminate remaining bulky grain defect using the inhibition repelling effect realization of electric field
Adjusting optimization with to arc-plasma energy, improves the section Potential Distributing of plasma near matrix, sufficiently attracts electricity
Arc plasma realizes the fast deposition of film to workpiece motion s；The microstructure and properties of prepared film can pass through arteries and veins
It rushes bias parameters to be adjusted, realizes that energetic ion is raw to film using the type of pulsed bias, amplitude, pulse width and frequency
Long pinning effect improves the texture and stress state of film growth, improves bond strength, improves the usability of film
Energy；Also stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously, is conducive to high ionization
Rate ion prepares the compound ceramic film of different element ratios, function film, polynary in the chemosynthesis reaction of workpiece surface
Multilayer, superlattices and film or pure metal film with gradient-structure；By using combination field and liner conical pipe and directly
Film prepared by the arc ion plating of pipe composite filter eliminates the bulky grain defect in film, reduce electric arc etc. from
Loss of the daughter in filter device and vacuum chamber avoids inner lining apparatus surface residues caused by different targets are replaced to thin
The pollution of film improves the service efficiency of arc-plasma, realizes the quick preparation of film, optimizes electricity using pulsed bias
The Energy distribution of arc plasma, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further mention
The service performance of high film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind
Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece
Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, combination field and liner are bored
Shape pipe is connected with the arc ion plating of straight tube composite filter, is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (4) is opened liner grid bias power supply (7), and liner bias conical pipe and straight tube combination unit (6) keep direct current positively biased
Pressure is opened grid bias power supply (1), is opened movable coil installation's power source (9) and is adjusted movable coil device (8), standardsizing rheostat device
(10) output resistance, technical arrangement plan carry out film deposition, and preparation has different stress, microstructure and element
The multilayer films of ratio, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, combination field and liner are bored
Shape pipe is connected with the arc ion plating of straight tube composite filter, is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (4) is opened liner grid bias power supply (7), and liner bias conical pipe and straight tube combination unit (6) keep direct current positively biased
Pressure is opened grid bias power supply (1), is opened movable coil installation's power source (9) and is adjusted movable coil device (8), standardsizing rheostat device
(10) output resistance, technical arrangement plan, carry out film deposition, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering,
One or two kinds of above method of conventional arc ion plating and pulsed cathode arc combination, then on workpiece apply Dc bias,
The compound bias of pulsed bias, DC pulse or bipolar pulse biasing device carry out film deposition, other and embodiment two-phase
Together.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with
On arc ion plating target source (3), multi-stage magnetic field device (4), liner bias conical pipe and straight tube combination unit (6) and active line
The combination field and liner conical pipe of coil apparatus (8) combination and the arc ion plating of straight tube composite filter are carried out with various proof gold
Belong to element and multicomponent alloy material is the film deposition of target, and combines Traditional DC magnetron sputtering, pulsed magnetron sputtering, tradition
The combination of one or two kinds of above method of arc ion plating and pulsed cathode arc, then apply Dc bias, pulse on workpiece
Bias or the compound biasing device of DC pulse carry out film deposition, and preparation has different stress, microstructure and element ratio
The multilayer films of example.
Claims (5)
1. the arc ion plating of combination field and liner conical pipe and straight tube composite filter, which is characterized in that the device includes
Grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner
Bias conical pipe and straight tube combine the unit (6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source
(9), rheostat device (10) sample stage (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe and straight tube combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample stage
(11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13),
The cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each output of multi-stage magnetic field power supply (5)
End, positive and negative anodes connections are determined according to output magnetic direction, and it is inclined that liner bias conical pipe and straight tube combination unit (6) connect liner
The cathode output end of voltage source (7), movable coil device (8) connect movable coil by the positive and negative anodes input terminal on flange port and fill
It sets power supply (9), rheostat device (10) is connected with movable coil device (8), the circuit of access and movable coil installation's power source (9)
In, open power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12) to 0.01Pa~10Pa, grid bias power supply (1) be direct current,
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width
It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1
~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and straight tube combination unit (6) can cooperate multi-stage magnetic field device (4) to design 2 grades, 3 grades or 4 grades etc.
A variety of hierarchical structures and inlet and outlet layout, it is solid by non-magnetic rivet interlacement between conical pipes and straight tube or conical pipe at different levels
Fixed, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe is interior with straight tube combination unit (6) inletD IntoGreater than electricity
The outer diameter in arc ion plating target source (3), entire outer diameter are less than the internal diameter of multi-stage magnetic field device (4), the internal diameter in exitD OutIn conjunction with dress
Combination, technological parameter and target for setting etc. determine that liner bias conical pipe and straight tube combine the unit (6) and multi-stage magnetic field device
(4) activity insulation is assembled together between, liner bias conical pipe and straight tube combination unit (6) can with apparent surface pollution level and
When disassembly cleaning and installation, avoid the inside pipe wall pollution of multi-stage magnetic field device (4) under linerless board status and be difficult to clear up ask
Topic, and thin film composition is caused to the secondary sputtering of multi-stage magnetic field device inner wall surface pollutant after effectively target being avoided to replace
Pollution；The length of liner bias conical pipe and straight tube combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), according to not
With the allocation plan of target and technological parameter selection liner bias conical pipe and straight tube combination unit (6), realizes and utilize from figure
Shape constrains the scavenging effect to bulky grain；
The material of multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) selects nonmagnetic, resistance to cleaning
304 stainless steel materials, multi-stage magnetic field device (4) determine length, internal-and external diameter, thickness according to the diameter of target, cooling, transmission range
Degree, magnetic field the number of turns and direction, liner bias conical pipe and straight tube combination unit (6) are according to multi-stage magnetic field device (4) internal diameter and electricity
The outer diameter in arc ion plating target source (3) determines liner bias conical pipe and straight tube combination unit (6) the inlet and outlet outer diameter of position and interior
Diameter, liner bias conical pipe and straight tube combination unit (6) need to select suitable thickness according to length and rigidity, according to actually setting
Count parameter processing；
It opens liner grid bias power supply (7), liner bias conical pipe and straight tube combination unit (6) keep direct current, pulse, more arteries and veins
Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type pass through adjusting
The adjustment of pulse frequency, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe and straight tube combination unit (6)
Bulky grain is attracted, depositing ions are repelled, reduces loss of the arc-plasma in pipe in transmission process, drop
The low bulky grain defect even being eliminated in arc-plasma improves the efficiency of transmission of arc-plasma and the deposition speed of film
Degree, the voltage parameter of liner grid bias power supply (7) is -200 ~+200V, compound for direct current, pulse, multiple-pulse, DC pulse
Or Bipolar pulse power, the wherein adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process
Periodical or continual and steady attraction is generated to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device (4) and
The probability of liner bias conical pipe and straight tube combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
Make the arc-plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and straight tube combination unit (6) transmission, benefit
With the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be curved using classical 90 degree
It is curved, it can also be using straight line and bending, bending and the Straight Combination (magnetic line of force phase of the magnetic line of force of straight line portion and bending part
Cut, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), (three sections of the combination of straight line, circular arc and straight line
Intersection and tangent combination) and circular arc, straight line and circular arc the typical coil knot such as combination (tangent between three and intersection)
Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make it with higher
Efficiency of transmission reaches matrix surface, overcomes deposition position limitation or base caused by designing due to vacuum chamber space and target source layout
Film caused by shape limits deposits problem of non-uniform, carries out the fast deposition of film；Standardsizing rheostat device (10) it is defeated
Resistance out, realizes the positive bias variation on movable coil device (8), and the electric field that positive bias generates may be implemented to fill multi-stage magnetic field
It is big to set electronics and remnants in the arc-plasma that transmission comes out in (4) and liner bias conical pipe and straight tube combination unit (6)
The attraction of particle, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and promote electric arc
Efficiency of transmission of the plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device (8) choosing
Select low-resistance copper tube, diameter, thickness and the length of copper pipe according to the number of turns of movable coil device (8), coil channel diameter,
Coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；Active line
The positive and negative anodes of coil apparatus power supply (9) provide suitable electricity to movable coil device (8) according to magnetic field strength, direction and cooling system
Stream, the input range of electric current are 0 ~ 2000A, guarantee that the stability of entire vacuum system and movable coil device (8) output are suitable
Magnetic field, the path transmission for setting arc-plasma according to movable coil device (8) guarantees to remove remaining bulky grain
While matrix surface reached with high efficiency of transmission, avoid arc-plasma loss in vacuum chamber (13), realize film
Fast deposition；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
2. the arc ion plating of combination field according to claim 1 and liner conical pipe and straight tube composite filter,
It is characterized in that, institute's use device further includes grid bias power supply kymographion (12), the pulse voltage that display grid bias power supply (1) issues
And current waveform, by adjusting the output waveform of grid bias power supply (1), to compound from combination field and liner conical pipe and straight tube
The plated film ion transmitted in the arc ion plating of filtering is effectively attracted, and the deposition and control of sample surfaces film are carried out
The ratio of deposition targets element in the film, realize plasma energy adjusting and be possible to remaining bulky grain defect into
Row electric field repulsion is removed.
3. the arc ion plating of combination field according to claim 1 and liner conical pipe and straight tube composite filter,
It is characterized in that, which combines multi-stage magnetic field device (4), liner bias conical pipe and straight using single set or more set combinations
The multiple types that pipe combines the unit (6) and movable coil device (8) combine, to prepare pure metal film, difference element ratio
Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure.
4. the arc ion plating of combination field according to claim 1 and liner conical pipe and straight tube composite filter,
It is characterized in that, using single set or covers the device more and combines using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc
The combination of one or two kinds of above method of ion plating and pulsed cathode arc, then apply Dc bias, pulsed bias on workpiece
Or DC pulse compound biasing device, realize that the compound of two or more depositional mode carries out film deposition, to make
Standby pure metal film, the compound ceramic film of different element ratios, function film and with nanometer multilayer or gradient-structure
Film.
5. the arc ion plating of combination field according to claim 1 and liner conical pipe and straight tube composite filter,
It is characterized in that, it is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer more
The film of layer or gradient-structure.
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| CN201711491622.9A CN109989022A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner conical pipe and straight tube composite filter |
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| CN201711491622.9A CN109989022A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner conical pipe and straight tube composite filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002440A (en) * | 2020-10-14 | 2020-11-27 | 大连理工大学 | Device for replacing linear plasma source |
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