CN109989009A - Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method - Google Patents

Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method Download PDF

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CN109989009A
CN109989009A CN201711488858.7A CN201711488858A CN109989009A CN 109989009 A CN109989009 A CN 109989009A CN 201711488858 A CN201711488858 A CN 201711488858A CN 109989009 A CN109989009 A CN 109989009A
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magnetron sputtering
power supply
power
pulse
arc
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魏永强
王好平
宗晓亚
张华阳
侯军兴
蒋志强
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method, belong to technical field of material surface treatment, the present invention be solve bulky grain in arc ion plating to the pollution of film and target using arc-plasma in limitation, magnetic filter transmission process loss and high-power impulse magnetron sputtering discharge instability the problems such as.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, movable coil device and power supply, Waveform Matching device, high-power impulse magnetron sputtering target source and power supply, oscillograph and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.

Description

Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method
Technical field
The present invention relates to combination field arc ion platings and high-power impulse magnetron sputtering composite deposition method, belong to material Technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.
Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm2, the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm2, the density of plasma reaches 1018m-3The order of magnitude, central region ion concentration Up to 1019m-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.
It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.
Summary of the invention
The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum The problems such as deposition position limitation and workpiece shapes caused by room space and target source layout design limit, with the pure metal of low melting point (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) As the target of high-power impulse magnetron sputtering, recycles arc ions electroplating method to realize that high-melting-point difficulty ionization target generates and continue The compound work that the plasma of stable, high ionization level, the magnetically confined of combining movement coil device and itself biasing electric field attract For eliminating the bulky grain defect contained in arc-plasma, while high power pulse magnetic control is controlled using movable coil device The transmission direction of the compound plasma of sputtering and arc ion plating in a vacuum chamber, is realized to any position matrix in vacuum chamber The control and regulation of the film deposition and thin film composition of workpiece surface, reduce compound plasma in the indoor loss of vacuum, overcome Film deposits problem of non-uniform caused by being limited due to vacuum chamber and target source position limitation or base shape, and workpiece surface is made to exist Ion energy is adjusted in the case where applying back bias voltage, removes arc-plasma using the biasing electric field inhibiting effect of matrix surface In bulky grain defect, the high-quality thin-film that preparation is continuous, fine and close, at the same realize to target elements content addition control in film, It reduces the production cost using alloys target, the efficiency of transmission for improving plasma, the deposition velocity for increasing film and reduces even Bulky grain defect is eliminated to the adverse effect of film microstructure, continuous compact deposits and service performance, proposes a kind of combination The arc ion plating and high-power impulse magnetron sputtering composite deposition method in magnetic field.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), sample stage (14) and true Empty room (15)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (14) in vacuum chamber (15), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (15), workpiece are placed on sample stage (14), Sample stage (14) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (15), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (14), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction It is fixed, open power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (15), to the vacuum degree in vacuum chamber (15) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity, multi-stage magnetic field device (12) select 304 stainless steel materials of nonmagnetic, resistance to cleaning, according to target Diameter, cooling, transmission range determine length, internal-and external diameter, thickness, magnetic field the number of turns and direction, multi-stage magnetic field device (12) it is interior Diameter is determined according to the outer diameter of arc ion plating target source (3)；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path for the arc-plasma that transmission comes out utilizes shape and the magnetic field magnetic line layout of movable coil device, direction Cooperation, movable coil can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and the Straight Combination (magnetic of two sections of straight line portions Line of force intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the group of circular arc, straight line and circular arc Close the typical loop construction combination such as (tangent between three and intersection), circular arc and straight line portion therein according to spatial position and The needs of transmission path are determined, and realize the separation with bulky grain defect, it is made to reach matrix table with higher efficiency of transmission Face overcomes deposition position limitation or base shape caused by designing due to vacuum chamber space and target source layout thin caused by limiting Film deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is to the bulky grain in arc-plasma Defect is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, overcome high power pulse magnetic control Sputtering technology discharge instability and ion resorption problem fill compound plasma by movable coil with higher efficiency of transmission It sets (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering Plasma reaches the matrix surface of arbitrary shape on any position or sample stage (12) in vacuum chamber (13), movable coil dress The adjustings such as coil turn, coil-span, shape and the transmission path of (9) are set to control compound plasma, reduce it is compound it is equal from Loss of the daughter in vacuum chamber (13) removes the bulky grain defect in arc-plasma, carries out the fast deposition of film；It adjusts The output resistance of rheostat device (11) is saved, realizes the positive bias variation on movable coil device (9), the electric field that positive bias generates The attraction to electronics in arc-plasma and remaining bulky grain may be implemented, and then increase output in movable coil device (9) The ion populations of arc-plasma increase, promote efficiency of transmission of the arc-plasma in movable coil device (9), disappear Except remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, diameter, thickness and the length of copper pipe according to According to the number of turns of movable coil device (9), coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, compound etc. from The transmission path and transmission range of daughter determines；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction Suitable electric current is provided to movable coil device (9) with cooling system, the input range of electric current is 0 ~ 2000A, is guaranteed entire true The stability and movable coil device (9) of empty set system export suitable magnetic field, make compound plasma according to movable coil device (9) path transmission set guarantees to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoid Compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b. Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, the further removing to remaining bulky grain defect from multi-stage magnetic field device overcome high power pulse magnetic control and splash Technology discharge instability and ion resorption problem are penetrated, loss of the compound plasma in vacuum chamber transmission process is reduced, is led to The guidance for crossing movable coil magnetic field further increases the efficiency of transmission of compound plasma and the deposition velocity of film, overcome by Film deposition caused by the deposition position limitation caused by vacuum chamber space and target source layout are designed or base shape limit is not Uniformity problem can realize the preparation of film in the optimum position of vacuum chamber, can also adjust active line by rheostat device The series impedance of circle realizes the adjustment to movable coil itself positive bias parameter, realizes to the electronics in arc-plasma With the attraction of remaining bulky grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminates remaining bulky grain Defect increases the deposition velocity of film；H. multi-stage magnetic field filter device can guarantee electric arc in target table by the constraint in magnetic field The stable motion in face generates lasting arc-plasma, and makes arc-plasma more by the magnetic line of force of multi-stage magnetic field High efficiency of transmission in grade magnetic field device changes the motion path of arc-plasma and bulky grain defect also to realize point of the two From being further reduced the bulky grain defect even being eliminated in arc-plasma；I. pulsed bias power supply is by adjusting pulse class Type, pulse amplitude, pulse width and pulse frequency, using electric field inhibition repelling effect realize to remaining bulky grain defect into Row is eliminated and is optimized to the adjusting of compound plasma energy；J. the microstructure and properties of prepared film can pass through pulse Bias parameters are adjusted, and realize that energetic ion grows film using the type of pulsed bias, amplitude, pulse width and frequency Pinning effect, improve film growth texture and stress state, improve bond strength, improve the service performance of film； K. by eliminating using film prepared by combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method Bulky grain defect in film, reduces loss of the compound plasma in filter device and vacuum chamber, improves compound The service efficiency of plasma, realizes the quick preparation of film, and can guarantee that film crystal tissue and microstructure more cause It is close, be conducive to the service performance for further increasing film.
Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method, the device can singly cover or More set combinations, and combine waveform control, multi-stage magnetic field device (12) and the movable coil device of synchronous waveform coalignment (8) (9) multiple types combination, realizes that the Optimized Matching, multi-stage magnetic field and the transmission path in movable coil magnetic field of different wave draw It leads, compound ceramic film, the function film of pure metal film, different element ratios is prepared in the indoor any position of vacuum And the film with nanometer multilayer or gradient-structure, the device can also be covered using single set or mostly and combined using Traditional DC magnetic Sputtering, pulsed magnetron sputtering, conventional arc ion plating and the one or two kinds of above method combination of pulsed cathode arc are controlled, then is used Dc bias, pulsed bias or the compound bias of DC pulse realize that the compound of two or more depositional mode carries out Film deposition, prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer multilayer or The high-quality thin-film of gradient-structure.
Detailed description of the invention
Fig. 1 is the assembly letter of combination field arc ion plating of the present invention and high-power impulse magnetron sputtering composite deposition method Figure；Fig. 2 is 6 kinds of topology layouts of movable coil device；Fig. 3 is synchronous waveform coalignment, high-power impulse magnetron sputtering electricity Source voltage waveform, grid bias power supply impulse waveform and high-power impulse magnetron sputtering unipolarity single pulse waveforms integral multiple, different phases The matching figure of position and different pulse widths.
Specific embodiment
Specific embodiment 1: illustrating present embodiment, present embodiment combination field electric arc below with reference to Fig. 1,2 and 3 Ion plating and high-power impulse magnetron sputtering composite deposition method institute use device include grid bias power supply (1), arc power (2), electricity Arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply Kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), active line Coil apparatus (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field device electricity Source (13), sample stage (14) and vacuum chamber (15)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (14) in vacuum chamber (15), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (15), workpiece are placed on sample stage (14), Sample stage (14) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (15), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (14), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction It is fixed, open power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (15), to the vacuum degree in vacuum chamber (15) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (12) are adjusted by multi-stage magnetic field installation's power source (13), keep arc-plasma in arc ion plating Target source (3), which is stablized, to be generated and is filtered elimination to bulky grain defect, is guaranteed the uniformity of target ablation, is improved the utilization of target Efficiency makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (12), and multi-stage magnetic field device (12) uses The red copper wire of surface insulation, according to the diameter and the number of turns for determining line by electric current and magnetic field strength, multi-stage magnetic field installation's power source (13) it independently powers to magnetic fields at different levels, after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through multi-stage magnetic field The output electric current of installation's power source (13) come adjust multi-stage magnetic field device (12) output magnetic directions at different levels and intensity；
Multi-stage magnetic field device (12) selects 304 stainless steel materials of nonmagnetic, resistance to cleaning, diameter, cooling, transmission according to target Distance determines length, internal-and external diameter, thickness, magnetic field the number of turns and direction, and the internal diameter of multi-stage magnetic field device (12) is according to arc ions The outer diameter for plating target source (3) determines；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path for the arc-plasma that transmission comes out utilizes shape and the magnetic field magnetic line layout of movable coil device, direction Cooperation, movable coil can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and the Straight Combination (magnetic of two sections of straight line portions Line of force intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the group of circular arc, straight line and circular arc Close the typical loop construction combination such as (tangent between three and intersection), circular arc and straight line portion therein according to spatial position and The needs of transmission path are determined (as illustrated in fig. 1 and 2), are realized the separation with bulky grain defect, are made it with higher transmission Efficiency reaches matrix surface, overcomes deposition position limitation or matrix shape caused by designing due to vacuum chamber space and target source layout Film caused by shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) to electric arc etc. from Bulky grain defect in daughter is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, overcome High-power impulse magnetron sputtering technology discharge instability and ion resorption problem, make arc-plasma with higher efficiency of transmission By movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and Gao Gong Rate pulsed magnetron sputtering plasma reaches the matrix of arbitrary shape on any position or sample stage (12) in vacuum chamber (13) Surface, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (9) control composite plasma Body reduces loss of the compound plasma in vacuum chamber (13), removes the bulky grain defect in arc-plasma, carries out thin The fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes the positive bias variation on movable coil device (9), The attraction to electronics in arc-plasma and remaining bulky grain may be implemented in the electric field that positive bias generates, and then increases active line The ion populations of the arc-plasma exported in coil apparatus (9) increase, and promote arc-plasma in movable coil device (9) In efficiency of transmission, eliminate remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, copper pipe it is straight The number of turns, coil channel diameter, coil shape, the coil turn spacing, vacuum of diameter, thickness and length according to movable coil device (9) Room size, the transmission path of arc-plasma and transmission range determine；The positive and negative anodes of movable coil installation's power source (10) according to Suitable electric current is provided to movable coil device (9) according to magnetic field strength, direction and cooling system, the input range of electric current is 0 ~ 2000A guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic field, makes arc-plasma According to the path transmission that movable coil device (9) are set, with high efficiency of transmission while guaranteeing to remove remaining bulky grain Reach matrix surface, avoids arc-plasma loss in vacuum chamber (13), realize the fast deposition of film；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.
Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method, make full use of high power pulse Sputtering target source carries out the generation and ionization of ion simultaneously in magnetron sputtering, breaks through the pure metal (such as aluminium, tin) or more of low melting point First alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) are in arc ion plating Using limitation, bulky grain problem caused by low melting material is effectively avoided；Work is controlled using synchronous waveform coalignment simultaneously Applied back bias voltage and high-power impulse magnetron sputtering technological parameter on part are conducive to improve high-power impulse magnetron sputtering target source The Potential Distributing in plasma section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate effectively are solved to workpiece motion s The certainly problem that high-power impulse magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ion plating is utilized simultaneously Metallic plasma lasting, that ionization level is high is stablized in the generation of technology, and it is unstable to make up the electric discharge of high-power impulse magnetron sputtering technology Fixed defect is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound of different element ratios Ceramic membrane, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.Utilize active line The cooperation of shape and the magnetic field magnetic line layout, direction of coil apparatus, movable coil can be using 90 degree of classical flexure types, can also To use straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), Straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and tangent of straight line, circular arc and straight line Combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), wherein Circular arc and straight line portion be determined according to the needs of spatial position and transmission path, realize to arc-plasma and Gao Gong Effective control in rate pulsed magnetron sputtering Plasma Transport path, to electric arc for transmitting out from multi-stage magnetic field device etc. from Remaining bulky grain defect is purged in daughter, overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption Problem reduces loss of the compound plasma in vacuum chamber transmission process and is further mentioned by the guidance in movable coil magnetic field The efficiency of transmission of high compound plasma and the deposition velocity of film overcome since vacuum chamber space and the design of target source layout cause Deposition position limitation or base shape limit caused by film deposit problem of non-uniform, can be in the optimum position of vacuum chamber It realizes the preparation of film, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil certainly The attraction to electronics and remaining bulky grain in arc-plasma, Lai Tisheng electric arc etc. are realized in the adjustment of body positive bias parameter Efficiency of transmission of the gas ions in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Utilize multistage Magnetic filtering device guarantees that electric arc in the stable motion of target material surface, generates lasting arc plasma by magnetically confined Body, and high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change electric arc are made by the magnetic line of force of multi-stage magnetic field Plasma and the motion path of bulky grain defect are further reduced come the separation both realized and even are eliminated arc-plasma In bulky grain defect；Pulsed bias power supply utilizes by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency The inhibition repelling effect of electric field, which is realized, eliminate to remaining bulky grain defect and excellent to the adjusting of compound plasma energy Change, improve the section Potential Distributing of plasma near matrix, sufficiently attracts compound plasma to workpiece motion s, realize film Fast deposition；The microstructure and properties of prepared film can be adjusted by pulsed bias parameter, inclined using pulse Type, amplitude, pulse width and the frequency of pressure realize the pinning effect that energetic ion grows film, improve the crystalline substance of film growth Body tissue and stress state improve bond strength, improve the service performance of film；The production of arc ion plating (aip) is also utilized simultaneously It is raw stablize continue, the metallic plasma that ionization level is high, be conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, Prepare compound ceramic film, function film, multi-component multi-layer, superlattices and the film with gradient-structure of different element ratios Or pure metal film；By using prepared by combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method Film, eliminate the bulky grain defect in film, reduce loss of the compound plasma in filter device and vacuum chamber, The service efficiency for improving compound plasma realizes the quick preparation of film, optimizes composite plasma using pulsed bias The Energy distribution of body, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase film Service performance.
Specific embodiment 2: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the period that high-power impulse magnetron sputtering power supply (4) exports pulse is that grid bias power supply (1) exports the whole of pulse Several times, as shown in figure 3, the pulse period of high-power impulse magnetron sputtering power supply (4) output is the pulse of grid bias power supply (1) output 8 times of period, technical arrangement plan carry out film deposition, and preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.
Specific embodiment 3: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the bias arteries and veins of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output It is adjustable to rush waveform phase, as shown in figure 3, different phase differences makes two power supply output pulse waveforms can in same pulse width With whole coincidences, partially overlaps or be not overlapped, thus according to the Proper Match of two power pulses of process choice of film deposition, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.
Specific embodiment 4: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the arteries and veins of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output pulse Rush that width is independently adjustable, as shown in figure 3, different pulse widths makes the output pulse waveform of two power supplys can be with the former covering The latter, the latter cover the former or are completely coincident, technical arrangement plan, carry out film deposition, and preparation has different stress, micro- The multilayer films of structure and element ratio are seen, other are identical as embodiment one.
Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 6: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, can be first using high-power impulse magnetron sputtering electricity in step 2 The pulsed bias power supply progress ion implantation and deposition of source (4) progress magnetron sputtering combination high voltage, raising film and matrix Then binding force carries out step 3, execute step 2 and step 3 repeatedly, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment two.
Specific embodiment 7: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, can be first using high-power impulse magnetron sputtering electricity in step 2 The pulsed bias power supply progress ion implantation and deposition of source (4) progress magnetron sputtering combination high voltage, raising film and matrix Then binding force carries out step 3, execute step 2 and step 3 repeatedly, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment three.
Specific embodiment 8: present embodiment and embodiment one the difference is that, movable magnet field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, can be first using high-power impulse magnetron sputtering electricity in step 2 The pulsed bias power supply progress ion implantation and deposition of source (4) progress magnetron sputtering combination high voltage, raising film and matrix Then binding force carries out step 3, execute step 2 and step 3 repeatedly, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment four.
Specific embodiment 9: present embodiment and embodiment one the difference is that, combination field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multiple-pulse, then with the period be bias plasma Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases The matching of position and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 10: present embodiment and embodiment one the difference is that, combination field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity single hop depth oscillating impulse, then with the period The cooperation of pulse is exported for grid bias power supply (1), grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integer Again, the matching of out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation has The multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 11: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is unipolarity single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillation pulse voltage can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can With identical as stage pulse, difference also can choose, the deep oscillating impulse stage also can take up the entire pulse period, form deep vibration Pulse voltage mode is swung, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and high power arteries and veins with the period The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 3, technical arrangement plan, Film deposition is carried out, the multilayer films with different stress, microstructure and element ratio, other and implementation are prepared Mode one is identical.
Specific embodiment 12: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is unipolarity multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 13: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is unipolarity multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of each section of deep oscillation pulse voltage Value can be identical as stage pulse, also can choose difference, between each other can also be using same or different deep oscillation arteries and veins Rush voltage magnitude, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with week Phase is the cooperation that grid bias power supply (1) exports pulse, and grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform are whole The matching of several times, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation tool There are the multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 14: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity pulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein ending phase Whole voltage magnitude, advantageously reduce target surface potential accumulation, eliminate spark phenomenon, go on smoothly the electric discharge of next pulse, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 9: present embodiment and embodiment one the difference is that, combination field arc ions Plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), is opened multi-stage magnetic field installation's power source (13) It adjusts multi-stage magnetic field device (12), opens movable coil installation's power source (10) and adjust movable coil device (9), standardsizing rheostat dress The output resistance for setting (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity multiple-pulse, then with the period be bias plasma Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases The matching of position and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 15: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity monopole single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 16: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity monopole single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, Wherein deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage Value can also be adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, Deep oscillating impulse can occur in the positive pulse stage, then be the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period The matching for rushing waveform from high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Fig. 3 institute Show, technical arrangement plan, carry out film deposition, prepares the multilayer knot with different stress, microstructure and element ratio Structure film, other are identical as embodiment one.
Specific embodiment 17: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity monopole multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 18: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity monopole multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, Wherein deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage Value can be identical as stage pulse, also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to it is different or Person's phasic Chang amplitude deep oscillating impulse can also occur in the negative pulse stage, deep vibration can also occur in the positive pulse stage Pulse is swung, then is the cooperation of grid bias power supply (1) output pulse with the period, grid bias power supply impulse waveform is splashed with high power pulse magnetic control The matching of impulse waveform integral multiple, out of phase and different pulse widths is penetrated, as shown in figure 3, technical arrangement plan, carries out film Deposition prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.
Specific embodiment 19: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity the two poles of the earth single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 20: present embodiment and embodiment one the difference is that, combination field electric arc from Son plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity the two poles of the earth single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, Wherein deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage Value can be identical as stage pulse, also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to it is different or Person's phasic Chang amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high power The matching of pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technological parameter tune It is whole, carry out film deposition, prepare have different stress, microstructure and element ratio multilayer films, other with Embodiment one is identical.
Specific embodiment 21: present embodiment and embodiment one the difference is that, combination field electric arc Ion plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 3, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 22: present embodiment and embodiment one the difference is that, combination field electric arc Ion plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, and it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, Wherein deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage Value can be identical as stage pulse, also can choose difference, the amplitude of each section of deep oscillation pulse voltage can be with stage pulse phase Together, it also can choose difference, same or different deep oscillation pulse voltage amplitude can also be used between each other, it is deep to vibrate arteries and veins The amplitude for rushing voltage can also be adjusted to different or phasic Chang amplitude, then export arteries and veins with the period for grid bias power supply (1) The cooperation of punching, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different arteries and veins The matching of width is rushed, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation has different stress, microcosmic knot The multilayer films of structure and element ratio, other are identical as embodiment one.
Specific embodiment 23: present embodiment and embodiment one the difference is that, combination field electric arc Ion plating is connect with high-power impulse magnetron sputtering composite deposition method, is opened arc power (2), and multi-stage magnetic field installation's power source is opened (13) multi-stage magnetic field device (12) are adjusted, opens movable coil installation's power source (10) and adjust movable coil device (9), adjusts variable resistance The output resistance of device device (11), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering Power supply (4) is opened simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The two or more combination of the operating mode of multistage depth oscillating impulse, then pulse is exported with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses The matching of width, as shown in figure 3, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment one.

Claims (5)

1. combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method, which is characterized in that the device packet Include grid bias power supply (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power arteries and veins Rush magnetic controlled sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), Synchronous waveform coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multistage Magnetic field device (12), multi-stage magnetic field installation's power source (13), sample stage (14) and vacuum chamber (15)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (14) in vacuum chamber (15), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (15), workpiece are placed on sample stage (14), Sample stage (14) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (15), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (14), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction It is fixed, open power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (15), to the vacuum degree in vacuum chamber (15) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (12) are adjusted by multi-stage magnetic field installation's power source (13), keep arc-plasma in arc ion plating Target source (3), which is stablized, to be generated and is filtered elimination to bulky grain defect, is guaranteed the uniformity of target ablation, is improved the utilization of target Efficiency makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (12), and multi-stage magnetic field device (12) uses The red copper wire of surface insulation, according to the diameter and the number of turns for determining line by electric current and magnetic field strength, multi-stage magnetic field installation's power source (13) it independently powers to magnetic fields at different levels, after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through multi-stage magnetic field The output electric current of installation's power source (13) come adjust multi-stage magnetic field device (12) output magnetic directions at different levels and intensity；
Multi-stage magnetic field device (12) selects 304 stainless steel materials of nonmagnetic, resistance to cleaning, diameter, cooling, transmission according to target Distance determines length, internal-and external diameter, thickness, magnetic field the number of turns and direction, and the internal diameter of multi-stage magnetic field device (12) is according to arc ions The outer diameter for plating target source (3) determines；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path for the arc-plasma that transmission comes out utilizes shape and the magnetic field magnetic line layout of movable coil device, direction Cooperation, movable coil can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and the Straight Combination (magnetic of two sections of straight line portions Line of force intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the group of circular arc, straight line and circular arc Close the typical loop construction combination such as (tangent between three and intersection), circular arc and straight line portion therein according to spatial position and The needs of transmission path are determined, and realize the separation with bulky grain defect, it is made to reach matrix table with higher efficiency of transmission Face overcomes deposition position limitation or base shape caused by designing due to vacuum chamber space and target source layout thin caused by limiting Film deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is to the bulky grain in arc-plasma Defect is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, overcome high power pulse magnetic control Sputtering technology discharge instability and ion resorption problem fill compound plasma by movable coil with higher efficiency of transmission It sets (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering Plasma reaches the matrix surface of arbitrary shape on any position or sample stage (12) in vacuum chamber (13), movable coil dress The adjustings such as coil turn, coil-span, shape and the transmission path of (9) are set to control compound plasma, reduce it is compound it is equal from Loss of the daughter in vacuum chamber (13) removes the bulky grain defect in arc-plasma, carries out the fast deposition of film；It adjusts The output resistance of rheostat device (11) is saved, realizes the positive bias variation on movable coil device (9), the electric field that positive bias generates The attraction to electronics in arc-plasma and remaining bulky grain may be implemented, and then increase output in movable coil device (9) The ion populations of arc-plasma increase, promote efficiency of transmission of the arc-plasma in movable coil device (9), disappear Except remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, diameter, thickness and the length of copper pipe according to According to the number of turns of movable coil device (9), coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, compound etc. from The transmission path and transmission range of daughter determines；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction Suitable electric current is provided to movable coil device (9) with cooling system, the input range of electric current is 0 ~ 2000A, is guaranteed entire true The stability and movable coil device (9) of empty set system export suitable magnetic field, make compound plasma according to movable coil device (9) path transmission set guarantees to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoid Compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
2. combination field arc ion plating according to claim 1 and high-power impulse magnetron sputtering composite deposition method, It is characterized in that, institute's use device further includes that grid bias power supply kymographion (6) show the pulse voltage that grid bias power supply (1) issues And current waveform, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show that high-power impulse magnetron sputtering power supply (4) are defeated Impulse waveform out passes through synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high power pulse magnetic control Shielding power supply (4) makes grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, out of phase With the matching of different pulse widths, the output waveform of grid bias power supply (1) is adjusted, to from combination field arc ion plating and high power The plated film ion transmitted in pulsed magnetron sputtering composite deposition method is effectively attracted, to multi-stage magnetic field device (12) and Transmission comes out the bulky grain in arc-plasma and carries out electric field inhibition in movable coil device (9), deposits in matrix surface thin Film and control deposition targets element ratio in the film realize the adjusting of plasma energy and are possible to remaining big Grain defect carries out electric field repulsion removing.
3. combination field arc ion plating according to claim 1 and high-power impulse magnetron sputtering composite deposition method, It is characterized in that, the device covers combination using single set or more, and combines the waveform control of synchronous waveform coalignment (8), lives The combination of the multiple types of moving-wire coil apparatus (9) and multi-stage magnetic field device (12), realizes Optimized Matching, the multi-stage magnetic field of different wave It is guided with the transmission path in movable coil magnetic field, prepares pure metal film, different element ratios in the indoor any position of vacuum Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of example.
4. combination field arc ion plating according to claim 1 and high-power impulse magnetron sputtering composite deposition method, It is characterized in that, first carrying out the pulsed bias electricity of magnetron sputtering combination high voltage using high-power impulse magnetron sputtering power supply (4) Source carries out ion implantation and deposition, improves the binding force of film and matrix, then is covered using list or covered the device more and combined and used Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc it is one or two kinds of with top Method combination, then apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two kinds or two kinds The compound of the above depositional mode carries out film deposition, thin to prepare pure metal film, the compound ceramic of different element ratios Film, function film and the film with nanometer multilayer or gradient-structure.
5. combination field arc ion plating according to claim 1 and high-power impulse magnetron sputtering composite deposition method, It is characterized in that, working gas selects argon gas or working gas to select one kind or more in nitrogen, acetylene, methane, silane or oxygen The mixed gas of kind, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer The film of multilayer or gradient-structure.
CN201711488858.7A 2017-12-30 2017-12-30 Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method Pending CN109989009A (en)

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US20110011737A1 (en) * 2009-07-17 2011-01-20 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same
CN104947046A (en) * 2015-07-28 2015-09-30 魏永强 Multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method
CN105088150A (en) * 2015-09-10 2015-11-25 魏永强 Multilevel magnetic field arc ion plating method with adjustable transmission directions

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Publication number Priority date Publication date Assignee Title
US20110011737A1 (en) * 2009-07-17 2011-01-20 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan High-power pulse magnetron sputtering apparatus and surface treatment apparatus using the same
CN104947046A (en) * 2015-07-28 2015-09-30 魏永强 Multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method
CN105088150A (en) * 2015-09-10 2015-11-25 魏永强 Multilevel magnetic field arc ion plating method with adjustable transmission directions

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* Cited by examiner, † Cited by third party
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CN114622180A (en) * 2022-03-11 2022-06-14 松山湖材料实验室 Multifunctional plasma equipment and plasma generation method

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