CN109989039A

CN109989039A - A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle

Info

Publication number: CN109989039A
Application number: CN201711489589.6A
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 张新国; 刘学申; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2017-12-30
Publication date: 2019-07-09

Abstract

A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: the devices such as arc ion plating target source, multi-stage magnetic field device, liner bias conical pipe, straight tube and perforated baffle combination unit, high-power impulse magnetron sputtering target source, movable coil device and line related, grid bias power supply, Waveform Matching device；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10^‑ ⁴When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and technological parameter is arranged.

Description

A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle

Technical field

The present invention relates to a kind of combination field, compound tube and the compound vacuum deposition methods of perforated baffle, belong to material table Surface treatment technical field.

Background technique

During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 10¹⁰A/m², cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.

Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm², the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm², the density of plasma reaches 10¹⁸m^-3The order of magnitude, central region ion concentration Up to 10¹⁹m^-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.

Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.

It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.

Summary of the invention

The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from Daughter, in conjunction with the pact of multi-stage magnetic field filter method and liner bias conical pipe, straight tube and perforated baffle combination unit own form The compound action that beam and biasing electric field attract eliminates the bulky grain defect contained in arc-plasma, while guaranteeing electric arc etc. Gas ions are filtered with higher efficiency of transmission by liner bias conical pipe, straight tube and perforated baffle combination unit and multi-stage magnetic field Device recycles the compound action of magnetically confined and the attraction of itself biasing electric field of movable coil device to eliminate from multi-stage magnetic field Big contained in the arc-plasma that device and liner bias conical pipe, straight tube and perforated baffle combination unit transmit out Grain defect, while being existed using the compound plasma of movable coil device control high-power impulse magnetron sputtering and arc ion plating Transmission direction in vacuum chamber realizes the control to the film deposition and thin film composition on any position substrate work-piece surface in vacuum chamber System is adjusted, and reduces compound plasma in the indoor loss of vacuum, is overcome due to vacuum chamber and target source position limitation or matrix Film caused by shape limits deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field device and liner bias conical pipe, straight tube Be possible to remaining bulky grain defect in the arc-plasma that transmits out in perforated baffle combination unit, make workpiece surface Ion energy is adjusted in the case where applying back bias voltage, removes arc plasma using the biasing electric field inhibiting effect of matrix surface Bulky grain defect in body, the high-quality thin-film that preparation is continuous, fine and close, while realizing to target elements content addition control in film System, increases the deposition velocity of film and reduces very the efficiency of transmission for reducing the production cost using alloys target, improving plasma To bulky grain defect is eliminated to the adverse effect of film microstructure, continuous compact deposits and service performance, a kind of group is proposed Close magnetic field, compound tube and the compound vacuum deposition method of perforated baffle.

Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, Straight tube and perforated baffle combination unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16), Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction Fixed, liner bias conical pipe, straight tube and perforated baffle combination unit (14) connect the cathode output end of liner grid bias power supply (15), open Open power supply total control switch and external water-cooling circulating system；

Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10^-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；

It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；

It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；

It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity；

Liner bias conical pipe, straight tube and perforated baffle combination unit (14) can cooperate multi-stage magnetic field device (12) design 2 grades, A variety of hierarchical structures such as 3 grades or 4 grades and inlet and outlet layout, pass through non-magnetic riveting between conical pipes and straight tube or conical pipe at different levels Nail is connected and fixed, and the internal diameter that the outer diameter and conical pipe and straight tube of perforated baffle combine the unit cooperates through magnetism-free stainless steel Together, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe, straight tube combine rivet assembly connection with perforated baffle Device (14) can dismantle in time cleaning and installation with apparent surface pollution level, avoid multi-stage magnetic field device under linerless board status (12) inside pipe wall pollution and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement liner baffle pollutant two It is secondary to sputter the pollution for causing thin film composition；Porous gear in liner bias conical pipe, straight tube and perforated baffle combination unit (14) Plate spacing is matched with the outlet of the length of magnetic field at different levels and conical pipe at different levels and straight tube or conical pipe of multi-stage magnetic field device (12), The length of conical pipe and straight tube combination unitHIt is identical with the length of multi-stage magnetic field device (12), conical pipe and straight tube combination unit The internal diameter of right side entranceD _IntoGreater than the outer diameter in arc ion plating target source (3), the outer diameter of conical pipe and straight tube combination unit is less than The internal diameter of multi-stage magnetic field device (12), the internal diameter in exitD _OutCombination, technological parameter and target of coupling apparatus etc. determine, porous The size, baffle spacing and structure that baffle can cooperate conical pipe and straight tube to combine the unit design baffle combine, according to different targets Material and technological parameter carry out the internal diameter at selection conical pipe and straight tube combination unit left side outletD _OutWith the internal diameter of right side entranceD _Into, pore size in perforated baffle, type and baffle at different levels structure combination, pass through conical pipe and straight tube combine the unit import The motion path of the variation of the internal diameter in place and exit and baffle arrangement combination limitation bulky grain, realizes the mechanical stop to bulky grain Shielding action；Activity between liner bias conical pipe, straight tube and perforated baffle combination unit (14) and multi-stage magnetic field device (12) Insulation is assembled together, the length of liner bias conical pipe, straight tube and perforated baffle combination unit (14)HWith multi-stage magnetic field device (12) length is identical, is attached together according to different targets and technological parameter selection liner bias conical pipe, straight tube and perforated baffle group The allocation plan of (14) is set, realizes the scavenging effect constrained using own form to bulky grain；

Multi-stage magnetic field device (12) and liner bias conical pipe, straight tube and perforated baffle combination unit (14) selection are nonmagnetic, resistance to 304 stainless steel materials of cleaning, multi-stage magnetic field device (12) determine length, interior according to the diameter of target, cooling, transmission range Outer diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, straight tube and perforated baffle combination unit (14) are according to multistage magnetic Field device (12) internal diameter and the outer diameter in arc ion plating target source (3) determine that liner bias conical pipe, straight tube are combined with perforated baffle Device (14) imports and exports the outer diameter and inner diameter of position, and liner bias conical pipe, straight tube and perforated baffle combine the unit (14) basis Length and rigidity need to select suitable thickness, process according to actual design parameter；

It opens liner grid bias power supply (15), liner bias conical pipe, straight tube and perforated baffle combination unit (14) keep direct current, list Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse bias class The adjustable pulse frequency of type, pulse width and pulse pattern, the adjustment of output voltage guarantee liner bias conical pipe, straight tube with Perforated baffle combination unit (14) attracts bulky grain, repels to depositing ions, reduces arc-plasma in pipe Loss in interior transmission process reduces the bulky grain defect even being eliminated in arc-plasma, improves arc-plasma The deposition velocity of efficiency of transmission and film, the voltage parameter of liner grid bias power supply (15) are -200 ~+200V, are direct current, simple venation Punching, multiple-pulse, DC pulse be compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width And pulse pattern, periodical or continual and steady attraction is generated to bulky grain defect during the deposition process, greatly reduces big The probability that grain passes through multi-stage magnetic field device (12) and liner bias conical pipe, straight tube and perforated baffle combination unit (14)；

It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；

Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias conical pipe, straight tube and perforated baffle combination unit (14) transmission, Using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 degree Flexure type, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part Tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination (three of straight line, circular arc and straight line Section intersection and tangent combination) and circular arc, straight line and circular arc the typical coil such as combination (tangent between three and intersect) Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, are realized and big The separation of grain defect, makes it reach matrix surface with higher efficiency of transmission, overcomes since vacuum chamber space and target source layout are set Film caused by the limitation of deposition position caused by counting or base shape limit deposits problem of non-uniform, carries out the quick heavy of film Product, multi-stage magnetic field device (12) are filtered elimination to the bulky grain defect in arc-plasma, guarantee the equal of target ablation Even property, improves the utilization efficiency of target, overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, Make compound plasma with higher efficiency of transmission by movable coil device (9), while realizing strong to magnetic direction and magnetic field The adjusting of degree, pilot arc plasma and high-power impulse magnetron sputtering plasma reach any position in vacuum chamber (13) Set or sample stage (12) on arbitrary shape matrix surface, the coil turn of movable coil device (9), coil-span, shape and The adjustings such as transmission path control compound plasma, reduce loss of the compound plasma in vacuum chamber (13), remove electricity Bulky grain defect in arc plasma, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized Positive bias variation on movable coil device (9), the electric field that positive bias generates may be implemented to electronics in arc-plasma and The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and mention Efficiency of transmission of the arc-plasma in movable coil device (9) is risen, remaining bulky grain defect is eliminated；Movable coil device (9) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (9) are selected Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；It is living The positive and negative anodes of moving winding installation's power source (10) provide conjunction to movable coil device (9) according to magnetic field strength, direction and cooling system The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) are defeated Suitable magnetic field out, the path transmission for setting compound plasma according to movable coil device (9) guarantee to remaining big Matrix surface is reached with high efficiency of transmission while grain is removed, avoids compound plasma loss in vacuum chamber (13), it is real The fast deposition of existing film；

Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.

According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.

Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b. Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, to remaining bulky grain from multi-stage magnetic field device and liner bias conical pipe, straight tube and perforated baffle combination unit The further removing of defect overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, reduces Loss of the compound plasma in vacuum chamber transmission process is further increased compound etc. by the guidance in movable coil magnetic field The efficiency of transmission of gas ions and the deposition velocity of film are overcome and deposit position caused by being designed due to vacuum chamber space and target source layout It sets limitation or base shape limits caused film deposition problem of non-uniform, can realize film in the optimum position of vacuum chamber Preparation, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil itself positive bias The adjustment of parameter, realizes the attraction to electronics and remaining bulky grain in arc-plasma, and Lai Tisheng arc-plasma exists Efficiency of transmission in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；H. multi-stage magnetic field filtering dress Setting can guarantee that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and lead to by the constraint in magnetic field The magnetic line of force for crossing multi-stage magnetic field makes high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc-plasma The separation both realized with the motion path of bulky grain defect, is further reduced big even be eliminated in arc-plasma Grain defect；I. liner bias conical pipe, straight tube and perforated baffle combination unit are by that can apply direct current, pulse or DC pulse Compound positive bias carries out lasting or periodically effectively attraction to bulky grain, carries out to depositing ions lasting or periodic Repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduces loss of the plasma in pipe in transmission process, into One step improves the efficiency of transmission of arc-plasma and the deposition velocity of film；J. liner bias conical pipe, straight tube and porous gear Plate combination unit can by own form, using the multiple combinations and internal diameter between multi-stage taper pipe and straight tube or conical pipe outside The shapes such as diameter variation, the pass of perforated baffle, aperture and spacing and motion path limitation, which are realized, hinders the machinery of bulky grain defect Screen effect is kept off, limits the direction of motion of bulky grain defect to eliminate the bulky grain defect in arc-plasma, liner bias The flexible disassembly of conical pipe, straight tube and perforated baffle combination unit, cleaning is convenient, it is possible to prevente effectively from after target replacement, internally The secondary sputtering of lining apparatus surface pollutant causes the pollution of thin film composition；K. pulsed bias power supply by adjusting pulse pattern, Pulse amplitude, pulse width and pulse frequency are realized using the inhibition repelling effect of electric field and are carried out to remaining bulky grain defect It eliminates and the adjusting of compound plasma energy is optimized；L. the microstructure and properties of prepared film can be inclined by pulse Pressure parameter is adjusted, and realizes what energetic ion grew film using the type of pulsed bias, amplitude, pulse width and frequency Pinning effect improves the texture and stress state of film growth, improves bond strength, improves the service performance of film；m. By eliminating thin using film prepared by a kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle Bulky grain defect in film reduces loss of the compound plasma in filter device and vacuum chamber, improve it is compound it is equal from The service efficiency of daughter, realizes the quick preparation of film, and can guarantee that film crystal tissue and microstructure are finer and close, has Conducive to the service performance for further increasing film.

A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle, the device can singly cover or more Set combination, and combine the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias conical pipe, directly It manages and is combined with the multiple types of perforated baffle combination unit (14) and movable coil device (9), realize the optimization of different wave Match, the guidance of the transmission path in multi-stage magnetic field and movable coil magnetic field, the indoor any position of vacuum come prepare pure metal film, Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of different element ratios, can also adopt It with single set or covers the device more and combines using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and arteries and veins The one or two kinds of above method combination of cathode arc is rushed, then uses Dc bias, pulsed bias or the compound bias of DC pulse, it is real The compound of existing two or more depositional mode carry out film deposition, prepares pure metal film, different element ratios Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.

Detailed description of the invention

Fig. 1 is the scheme of erection of a kind of combination field of the present invention, compound tube and the compound vacuum deposition method of perforated baffle； Fig. 2 is 6 kinds of topology layouts of movable coil device；Fig. 3 is that liner bias conical pipe, straight tube and perforated baffle combination unit decompose The typical structure schematic diagram of structure diagram, the typical structure schematic diagram that liner bias straight tube is combined with conical pipe and perforated baffle；Fig. 4 is Synchronous waveform coalignment, high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and high power pulse The matching figure of magnetron sputtering unipolarity single pulse waveforms integral multiple, out of phase and different pulse widths.

Specific embodiment

Specific embodiment 1: illustrating present embodiment, a kind of combination field of present embodiment, group below with reference to Fig. 1-4 It closes pipe and the compound vacuum deposition method institute use device of perforated baffle includes grid bias power supply (1), arc power (2), arc ions Plating target source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply waveform show Wave device (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, straight tube and perforated baffle combination unit (14), liner grid bias power supply (15), sample stage (16) and Vacuum chamber (17)；

In the device:

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias conical pipe, straight tube and perforated baffle combination unit (14) transmission, Using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 degree Flexure type, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part Tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination (three of straight line, circular arc and straight line Section intersection and tangent combination) and circular arc, straight line and circular arc the typical coil such as combination (tangent between three and intersect) Structure combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, are realized and big The separation of grain defect, makes it reach matrix surface with higher efficiency of transmission, overcomes since vacuum chamber space and target source layout are set Film caused by the limitation of deposition position caused by counting or base shape limit deposits problem of non-uniform, carries out the quick heavy of film Product, multi-stage magnetic field device (12) and liner bias conical pipe, straight tube and perforated baffle combination unit (14) are to arc-plasma In bulky grain defect be filtered elimination, guarantee the uniformity of target ablation, improve the utilization efficiency of target, overcome Gao Gong Rate pulsed magnetron sputtering technology discharge instability and ion resorption problem, pass through compound plasma with higher efficiency of transmission Movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and high power arteries and veins The matrix surface of arbitrary shape on any position in magnetron sputtering plasma arrival vacuum chamber (13) or sample stage (12) is rushed, The adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (9) control compound plasma, subtract Few loss of the compound plasma in vacuum chamber (13), removes the bulky grain defect in arc-plasma, carries out film Fast deposition；The output resistance of standardsizing rheostat device (11) realizes the positive bias variation on movable coil device (9), positively biased The attraction to electronics in arc-plasma and remaining bulky grain may be implemented in the electric field that pressure generates, and then increases movable coil dress The ion populations for setting the arc-plasma exported in (9) increase, and promote arc-plasma in movable coil device (9) Efficiency of transmission eliminates remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, the diameter of copper pipe, thickness Degree and length are big according to the number of turns of movable coil device (9), coil channel diameter, coil shape, coil turn spacing, vacuum chamber Small, compound plasma transmission path and transmission range determine；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic Field intensity, direction and cooling system provide suitable electric current to movable coil device (9), and the input range of electric current is 0 ~ 2000A, The stability and movable coil device (9) for guaranteeing entire vacuum system export suitable magnetic field, make compound plasma according to work The path transmission of moving-wire coil apparatus (9) setting guarantees to reach base while removing remaining bulky grain with high efficiency of transmission Body surface face avoids compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；

The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.

Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.

Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.

It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.

A kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle, make full use of high power pulse magnetic Sputtering target source carries out the generation and ionization of ion simultaneously in control sputtering, breaks through the pure metal (such as aluminium, tin) or polynary of low melting point Alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) answering in arc ion plating With limitation, bulky grain problem caused by low melting material is effectively avoided；Workpiece is controlled using synchronous waveform coalignment simultaneously Upper applied back bias voltage and high-power impulse magnetron sputtering technological parameter are conducive to improve high-power impulse magnetron sputtering target source etc. The Potential Distributing in gas ions section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate effectively are solved to workpiece motion s The problem that high-power impulse magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ion plating skill is utilized simultaneously Metallic plasma lasting, that ionization level is high is stablized in the generation of art, makes up high-power impulse magnetron sputtering technology discharge instability Defect, be conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepare the compound pottery of different element ratios Porcelain film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.Utilize movable coil The cooperation of shape and the magnetic field magnetic line layout, direction of device, movable coil can be using 90 degree of classical flexure types, can also be with Using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), directly Line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and tangent of straight line, circular arc and straight line Combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), it is therein Circular arc and straight line portion are determined according to the needs of spatial position and transmission path, are realized to arc-plasma and high power Effective control in pulsed magnetron sputtering Plasma Transport path, to from multi-stage magnetic field device and liner bias conical pipe, straight tube With remaining bulky grain defect is purged in the arc-plasma that transmits out in perforated baffle combination unit, overcome Gao Gong Rate pulsed magnetron sputtering technology discharge instability and ion resorption problem reduce compound plasma in vacuum chamber transmission process Loss the efficiency of transmission of compound plasma and the deposition speed of film are further increased by the guidance in movable coil magnetic field Degree overcomes deposition position limitation or base shape caused by designing due to vacuum chamber space and target source layout thin caused by limiting Film deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also be adjusted by rheostat device The series impedance of movable coil is saved, realizes the adjustment to movable coil itself positive bias parameter, is realized to arc-plasma In electronics and remaining bulky grain attraction, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining Bulky grain defect, increase the deposition velocity of film；Guarantee that electric arc exists by magnetically confined using multi-stage magnetic field filter device The stable motion of target material surface generates lasting arc-plasma, and makes arc plasma by the magnetic line of force of multi-stage magnetic field High efficiency of transmission of the body in multi-stage magnetic field device changes the motion path of arc-plasma and bulky grain defect also to realize two The separation of person is further reduced the bulky grain defect even being eliminated in arc-plasma；Utilize liner bias conical pipe, straight tube Compound positive bias, carries out the lasting or period to bulky grain with perforated baffle combination unit application direct current, pulse or DC pulse Property effective attraction, effectively avoid bulky grain problem caused by low melting material, to depositing ions carry out continue or periodically Repulsion, can also be vibrated by the bipolar pulse of positive back bias voltage, reduce loss of the plasma in pipe in transmission process, Further increase the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias conical pipe, straight tube and porous gear Plate combination unit can be combined using multi-stage taper pipe with the various structures of straight tube, perforated baffle and internal diameter by own form The machinery to bulky grain defect is realized in structure combination between outer diameter variation, the type of baffle holes, aperture, pitch of holes and baffle at different levels Stop screen effect, limit the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma, reduces big Particle reaches the probability on deposited samples surface by liner bias conical pipe, straight tube and perforated baffle combination unit；Liner bias Fast quick-detach installation, cleaning side may be implemented by non-magnetic rivet interlacement in conical pipe, straight tube and perforated baffle combination unit Just, the problem of avoiding the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, can also effectively avoid target more After changing, the pollution of thin film composition is caused to the secondary sputtering of liner apparatus surface pollutant；Pulsed bias power supply is by adjusting arteries and veins Type, pulse amplitude, pulse width and pulse frequency are rushed, is realized using the inhibition repelling effect of electric field and remaining bulky grain is lacked It is trapped into row to eliminate and optimize the adjusting of compound plasma energy, improves the section Potential Distributing of plasma near matrix, Sufficiently attract compound plasma to workpiece motion s, realizes the fast deposition of film；The microstructure and properties of prepared film Can be adjusted by pulsed bias parameter, using the type of pulsed bias, amplitude, pulse width and frequency realize high energy from The pinning effect that son grows film improves the texture and stress state of film growth, improves bond strength, improves film Service performance；Also stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously, favorably In high ionization level ion in the chemosynthesis reaction of workpiece surface, compound ceramic film, the function of different element ratios are prepared Film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；By utilizing a kind of combination field, group Film prepared by pipe and the compound vacuum deposition method of perforated baffle is closed, the bulky grain defect in film is eliminated, reduces It is residual to avoid inner lining apparatus surface caused by different targets are replaced for loss of the compound plasma in filter device and vacuum chamber Pollution of the excess to film, improves the service efficiency of compound plasma, realizes the quick preparation of film, utilizes pulsed bias The Energy distribution of compound plasma is optimized, and can guarantee that film crystal tissue and microstructure are finer and close, is conducive to Further increase the service performance of film.

Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, high-power impulse magnetron sputtering power supply (4) exports the integral multiple for the period of pulse pulse being exported for grid bias power supply (1), such as Fig. 4 Shown, the pulse period of high-power impulse magnetron sputtering power supply (4) output is 8 times of the pulse period of grid bias power supply (1) output, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, the bias pulse waveform phase of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output It is adjustable, as shown in figure 4, in same pulse width, different phase differences is overlapped two power supply output pulse waveforms all, It partially overlaps or is not overlapped, thus according to the Proper Match of two power pulses of process choice of film deposition, technological parameter tune It is whole, carry out film deposition, prepare have different stress, microstructure and element ratio multilayer films, other with Embodiment one is identical.

Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, the pulse width of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output pulse is independent It is adjustable, as shown in figure 4, different pulse widths makes the output pulse waveform of two power supplys that can cover the latter, the latter with the former Cover the former or be completely coincident, technical arrangement plan, carry out film deposition, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, high-power impulse magnetron sputtering power supply can be first used in step 2 (4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment two.

Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, high-power impulse magnetron sputtering power supply can be first used in step 2 (4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment three.

Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, high-power impulse magnetron sputtering power supply can be first used in step 2 (4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment four.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multiple-pulse, then with the period be grid bias power supply (1) export The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and difference The matching of pulse width carries out film deposition as shown in figure 4, technical arrangement plan, and preparation has different stress, microcosmic The multilayer films of structure and element ratio, other are identical as embodiment one.

Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity single hop depth oscillating impulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is unipolarity single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillation pulse voltage It can work to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the electric discharge of sparking plasma not Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with stage pulse It is identical, it also can choose difference, the deep oscillating impulse stage also can take up the entire pulse period, form deep oscillation pulse voltage mould Formula, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering arteries and veins The matching of waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 4, technical arrangement plan, it is heavy to carry out film Product prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.

Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multistage depth oscillating impulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is unipolarity multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse bias It can work to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the electric discharge of sparking plasma not Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of each section of deep oscillation pulse voltage can be with pulse Stage is identical, also can choose difference, can also use same or different deep oscillation pulse voltage amplitude between each other, deep The amplitude of oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opening, it is bipolarity pulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein the whole voltage magnitude of ending phase, Advantageously reduce target surface potential accumulation, eliminate spark phenomenon, go on smoothly the electric discharge of next pulse, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field, combination It manages the vacuum deposition method compound with perforated baffle to connect, open arc power (2), open multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity multiple-pulse, then with the period be grid bias power supply (1) export The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and difference The matching of pulse width carries out film deposition as shown in figure 4, technical arrangement plan, and preparation has different stress, microcosmic The multilayer films of structure and element ratio, other are identical as embodiment one.

Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity monopole single hop depth oscillating impulse, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is bipolarity monopole single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technological parameter Adjustment carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other It is identical as embodiment one.

Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity monopole multistage depth oscillating impulse, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is bipolarity monopole multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with pulse Stage is identical, also can choose difference, and the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang Amplitude deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then with week Phase is the cooperation that grid bias power supply (1) exports pulse, and grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform are whole The matching of several times, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation tool There are the multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity the two poles of the earth single hop depth oscillating impulse, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field, group It closes the pipe vacuum deposition method compound with perforated baffle to connect, open arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe, straight tube and perforated baffle combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is bipolarity the two poles of the earth single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with pulse Stage is identical, also can choose difference, and the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang Amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering The matching of impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, it is heavy to carry out film Product prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.

Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field, The compound tube vacuum deposition method compound with perforated baffle connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts Multi-stage magnetic field device (12) is opened liner grid bias power supply (15) adjusting liner bias conical pipe, straight tube and perforated baffle group and is attached together The bias of (14) is set, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) Output resistance controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8) It opens, it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with the period is inclined Voltage source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, no The matching of same-phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation is answered with difference The multilayer films of power state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field, The compound tube vacuum deposition method compound with perforated baffle connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts Multi-stage magnetic field device (12) is opened liner grid bias power supply (15) adjusting liner bias conical pipe, straight tube and perforated baffle group and is attached together The bias of (14) is set, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) Output resistance controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8) It opens, it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillation arteries and veins It rushes bias and can work in high-power impulse magnetron sputtering power supply (4) and start unlatching, advantageously reduce sparking plasma and put The adverse effect of electricity can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also To open in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with arteries and veins It is identical to rush the stage, also can choose difference, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, can also select Difference is selected, same or different deep oscillation pulse voltage amplitude, the width of deep oscillation pulse voltage can also be used between each other Value can also be adjusted to different or phasic Chang amplitude, then be the cooperation of grid bias power supply (1) output pulse with the period, partially Of voltage source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field, The compound tube vacuum deposition method compound with perforated baffle connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts Multi-stage magnetic field device (12) is opened liner grid bias power supply (15) adjusting liner bias conical pipe, straight tube and perforated baffle group and is attached together The bias of (14) is set, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) Output resistance controls grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8) It opens, it is unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop that high-power impulse magnetron sputtering power supply (4), which exports pulse, Deep oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop shake deeply Swing the oscillation deeply of pulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage The two or more combination of the operating mode of pulse, then with the period be grid bias power supply (1) export pulse cooperation, bias The matching of power pulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, As shown in figure 4, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.

Claims

1. a kind of combination field, compound tube and the compound vacuum deposition method of perforated baffle, which is characterized in that the device includes inclined Voltage source (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power pulse magnetic Control sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), waveform Simultaneously match device (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field Device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, straight tube and perforated baffle combine the unit (14), liner Grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

2. a kind of combination field according to claim 1, compound tube and the compound vacuum deposition method of perforated baffle, special Sign is that institute's use device further includes the pulse voltage and electricity that grid bias power supply kymographion (6) show that grid bias power supply (1) issues Waveform is flowed, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) shows high-power impulse magnetron sputtering power supply (4) output Impulse waveform passes through synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high-power impulse magnetron sputtering Power supply (4) makes grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, out of phase and not With the matching of pulse width, the output waveform of grid bias power supply (1) is adjusted, to from a kind of combination field, compound tube and perforated baffle The plated film ion transmitted in compound vacuum deposition method is effectively attracted, inclined to multi-stage magnetic field device (12), liner Conical pipe, straight tube and perforated baffle combination unit (14) and the middle transmission of movable coil device (9) is pressed to come out in arc-plasma Bulky grain carry out electric field inhibition, in matrix surface deposition film and control deposition targets element ratio in the film, realize The adjusting of plasma energy and it is possible that remaining bulky grain defect progress electric field repulsion removing.

3. a kind of combination field according to claim 1, compound tube and the compound vacuum deposition method of perforated baffle, special Sign is that the device combines the waveform control of synchronous waveform coalignment (8), active line using single set or more set combinations The multiple types of coil apparatus (9), multi-stage magnetic field device (12) and liner bias conical pipe, straight tube and perforated baffle combination unit (14) Type combination realizes that Optimized Matching, multi-stage magnetic field, liner bias conical pipe, straight tube and the perforated baffle of different wave combine the unit It is guided with the transmission path in movable coil magnetic field, prepares pure metal film, different element ratios in the indoor any position of vacuum Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of example.

4. a kind of combination field according to claim 1, compound tube and the compound vacuum deposition method of perforated baffle, special Sign is, first carried out using high-power impulse magnetron sputtering power supply (4) pulsed bias power supply of magnetron sputtering combination high voltage into Row ion implantation and deposition improves the binding force of film and matrix, then using single set or covers the device more and combine using tradition Magnetically controlled DC sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one or two kinds of above method group It closes, then applies Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two or more The compound of depositional mode carries out film deposition, to prepare compound ceramic film, the function of pure metal film, different element ratios It can film and the film with nanometer multilayer or gradient-structure.

5. a kind of combination field according to claim 1, compound tube and the compound vacuum deposition method of perforated baffle, special Sign is that it is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer Or the film of gradient-structure.