CN109989020A - The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration - Google Patents

The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration Download PDF

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Publication number
CN109989020A
CN109989020A CN201711491538.7A CN201711491538A CN109989020A CN 109989020 A CN109989020 A CN 109989020A CN 201711491538 A CN201711491538 A CN 201711491538A CN 109989020 A CN109989020 A CN 109989020A
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China
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arc
magnetic field
conical pipe
liner
perforated baffle
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Inventor
魏永强
王好平
侯军兴
张华阳
刘源
蒋志强
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field filter device.The inventive system comprises: grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias conical pipe and perforated baffle combination unit and grid bias power supply, movable coil device and power supply, grid bias power supply kymographion and vacuum chamber etc.；Film deposition: attachment device, activation system, to vacuum degree in vacuum chamber less than 10‑4When Pa, it is passed through working gas, open plated film power supply, the energy of grid bias power supply adjusting arc-plasma, liner bias conical pipe and perforated baffle combination unit and multi-stage magnetic field device eliminate the bulky grain defect in arc-plasma and improve its efficiency of transmission in filter device, loss in a vacuum chamber is reduced, setting technological parameter prepares film.

Description

The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration
Technical field
The present invention relates to the arc ion platings of combination field and liner conical pipe and perforated baffle combined filtration, belong to material Technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang, The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date: On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02): 11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996: 962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary The problems such as pollution of thin film composition caused by sputtering, in conjunction with multi-stage magnetic field filter method and liner bias conical pipe and perforated baffle group The compound action for attaching together mechanical stop shielding and the biasing electric field attraction of setting own form contains to eliminate in arc-plasma Bulky grain defect, while guaranteeing arc-plasma with higher efficiency of transmission by liner bias conical pipe and perforated baffle Combination unit and multi-stage magnetic field filter device recycle the control of movable coil device from multi-stage magnetic field device and liner bias taper The transmission direction of the arc-plasma that pipe transmits out with perforated baffle combination unit in a vacuum chamber, is realized in vacuum chamber The control and regulation of the film deposition and thin film composition on any position substrate work-piece surface, overcome due to vacuum chamber space and target source cloth Film caused by the limitation of deposition position caused by office designs or base shape limit deposits problem of non-uniform, thoroughly removes from more It is possible in the arc-plasma for transmitting out in grade magnetic field device and liner bias conical pipe and perforated baffle combination unit Remaining bulky grain defect, makes workpiece surface adjust ion energy in the case where applying back bias voltage, and preparation is continuous, densification excellent Matter film, while realizing and target elements content addition in film is controlled, reduce the production cost using alloys target, improve electric arc The efficiency of transmission of plasma, the deposition velocity for increasing film and decrease or even eliminate bulky grain defect to film microstructure, The adverse effect of continuous compact deposits and service performance, proposes a kind of combination field and liner conical pipe and perforated baffle are compound The arc ion plating of filtering.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic Field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe and perforated baffle combine the unit (6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), grid bias power supply wave Kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper Mutually insulated between pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample Sample platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13) on, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each of multi-stage magnetic field power supply (5) A output end, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe and perforated baffle combination Device (6) connects the cathode output end of liner grid bias power supply (7), and movable coil device (8) is inputted by the positive and negative anodes on flange port End connection movable coil installation's power source (9), rheostat device (10) are connected with movable coil device (8), access and movable coil In the circuit of installation's power source (9), power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source (3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5) Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 1 grade of conical pipe, 2 The structure and inlet and outlet layout of grade conical pipe, 3 grades of conical pipes or 4 grades of conical pipes, the internal diameter of entrance conical pipeD IntoGreater than electricity The outer diameter in arc ion plating target source (3), taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (4), perforated baffle it is outer Diameter is matched with the internal diameter of conical pipe, is fixed together by the rivet interlacement of nonmagnetic stainless steel material, between perforated baffle It is attached by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for dismantling assembling and cleaning pollutant, liner is inclined Activity insulation is assembled together between pressure conical pipe and perforated baffle combination unit (6) and multi-stage magnetic field device (4), liner bias Conical pipe and perforated baffle combination unit (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid no liner plate The inside pipe wall pollution of multi-stage magnetic field device (4) and the problem of clearing up is difficult under state, and after effectively target being avoided to replace internally The secondary sputtering of lining bias conical pipe and perforated baffle combination unit (6) surface contaminant causes the pollution of thin film composition；Liner The conical pipe total length of bias conical pipe and perforated baffle combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), it is interior The magnetic fields at different levels of the perforated baffle spacing and multi-stage magnetic field device (4) that serve as a contrast bias conical pipe and perforated baffle combination unit (6) are long Degree matches, and perforated baffle can cooperate the entrance internal diameter of conical pipes at different levels to design baffle size, the pore size of baffle, gear Plate spacing and structure combination are combined the unit according to different targets and technological parameter selection liner bias conical pipe and perforated baffle (6) allocation plan is realized and is shielded to the mechanical stop of bulky grain；
The selection of the material of multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) is nonmagnetic, resistance to clear 304 stainless steel materials of reason, multi-stage magnetic field device (4) determine length, inside and outside according to the diameter of target, cooling, transmission range Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe are filled with perforated baffle combination unit (6) according to according to multi-stage magnetic field The outer diameter for setting (4) internal diameter and arc ion plating target source (3) determines the outer diameter and inner diameter for importing and exporting conical pipe at position, further according to length Degree and rigidity need to select suitable thickness, and perforated baffle is according to needing to select suitable thickness, the size in aperture, type and each The topology layout of grade baffle, is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe and perforated baffle combination unit (6) keep direct current, pulse, more Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type can be adjusted Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees liner bias conical pipe and perforated baffle combination Device (6) attracts bulky grain, repels to depositing ions, and reduction arc-plasma is in pipe in transmission process Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (7), which is -200 ~+200V, Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field Set the probability of (4) and liner bias conical pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled Make the arc plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) transmission Body, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 Flexure type is spent, it can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic force of bending part Line is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination of straight line, circular arc and straight line The typical lines such as (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Coil structures combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, make its with compared with High efficiency of transmission reaches matrix surface, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (10) is realized Positive bias variation on movable coil device (8), the electric field that positive bias generates may be implemented to multi-stage magnetic field device (4) and liner The suction of electronics and remaining bulky grain in the arc-plasma that transmission comes out in bias conical pipe and perforated baffle combination unit (6) Draw, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and promote arc-plasma Efficiency of transmission in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device (8) selects low resistance Copper tube, the number of turns, coil channel diameter, the coil shape of the diameter of copper pipe, thickness and length according to movable coil device (8) Shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；Movable coil device The positive and negative anodes of power supply (9) provide suitable electric current, electricity to movable coil device (8) according to magnetic field strength, direction and cooling system The input range of stream is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (8) export suitable magnetic , the path transmission for setting arc-plasma according to movable coil device (8) guarantees to remove remaining bulky grain same The efficiency of transmission of Shi Yigao reaches matrix surface, avoids arc-plasma loss in vacuum chamber (13), realizes the fast of film Speed deposition；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee The normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is lived using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device Moving winding can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (straight line portion The magnetic line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), The combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc of straight line, circular arc and straight line are (between three Tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission path It needs to be determined, realizes effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias The further removing of remaining bulky grain defect, reduces arc-plasma in vacuum in conical pipe and perforated baffle combination unit Loss in the transmission process of room, by the guidance in movable coil magnetic field, further increase arc-plasma efficiency of transmission and The deposition velocity of film overcomes deposition position limitation or base shape caused by designing due to vacuum chamber space and target source layout Film caused by limiting deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also pass through Rheostat device adjusts the series impedance of movable coil, realizes the adjustment to movable coil itself positive bias parameter, realization pair The attraction of electronics and remaining bulky grain in arc-plasma, transmission effect of the Lai Tisheng arc-plasma in movable coil Rate eliminates remaining bulky grain defect, increases the deposition velocity of film；B. multi-stage magnetic field filter device can pass through the pact in magnetic field Beam guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and the magnetic line of force for passing through multi-stage magnetic field Make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also changes the movement of arc-plasma and bulky grain defect Path is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；C. liner bias Conical pipe and perforated baffle combination unit are by that can apply direct current, pulse or the compound positive bias of DC pulse, to bulky grain Continue or periodically effectively attract, depositing ions continue or periodically repel, positive negative bias can also be passed through The bipolar pulse of pressure is vibrated, and is reduced loss of the plasma in pipe in transmission process, is further increased arc-plasma Efficiency of transmission and film deposition velocity；D. liner bias conical pipe and perforated baffle combination unit can be by from figures Shape determines the outer diameter of conical pipe according to the internal diameter of multi-stage magnetic field device, and determines the outer diameter of perforated baffle, and conical pipe is according to length Need to select suitable thickness with rigidity, perforated baffle is according to needing to select suitable thickness, the size in aperture, type and at different levels The topology layout of baffle utilizes the topology layout group of the type of conical pipes at different levels and baffle holes, aperture, pitch of holes and baffle at different levels It closes, limits the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma, realize to bulky grain defect Mechanical stop screen effect, the flexible disassembly of liner bias conical pipe and perforated baffle combination unit, cleaning is convenient, Ke Yiyou After effect avoids target from replacing, different targets draw bias conical pipe and the secondary sputtering of perforated baffle combination unit surface contaminant Play the pollution of thin film composition；E. pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency, It is realized using the inhibition repelling effect of electric field and elimination is carried out to remaining bulky grain defect and to the tune of arc-plasma energy Section optimization；F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize pulsed bias Type, amplitude, pulse width and frequency realize the pinning effect that energetic ion grow film, improve the crystal that film is grown Tissue and stress state improve bond strength, improve the service performance of film；G. by utilizing combination field and liner conical pipe Film prepared by arc ion plating with perforated baffle combined filtration eliminates the bulky grain defect in film, reduces electricity Loss of the arc plasma in filter device and vacuum chamber, improves the service efficiency of arc-plasma, realizes film Quickly preparation, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to the use for further increasing film Performance.
The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration, the device can singly cover or More set combinations, and combine multi-stage magnetic field device (4), liner bias conical pipe and perforated baffle combination unit (6) and movable coil The multiple types of device (8) combine, to prepare compound ceramic film, the function film of pure metal film, different element ratios And the film with nanometer multilayer or gradient-structure, the device can also be covered using single set or mostly and combined using Traditional DC magnetic It controls sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse is multiple Biasing device is closed, realizes that the compound of two or more depositional mode carries out film deposition, prepares pure metal film, no With the compound ceramic film of element ratio, function film and high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the assembly letter of the arc ion plating of combination field of the present invention and liner conical pipe and perforated baffle combined filtration Figure；Fig. 2 is 7 kinds of topology layouts of movable coil；Fig. 3 is the decomposition texture of liner bias conical pipe and perforated baffle combination unit And the typical structure schematic diagram of conical pipe, perforated baffle.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1,2 and 3, present embodiment combination field with it is interior The arc ion plating institute use device of lining conical pipe and perforated baffle combined filtration includes grid bias power supply (1), arc power (2), electricity Arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe and perforated baffle combination Device (6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample Sample platform (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper Mutually insulated between pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample Sample platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13) on, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each of multi-stage magnetic field power supply (5) A output end, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe and perforated baffle combination Device (6) connects the cathode output end of liner grid bias power supply (7), and movable coil device (8) is inputted by the positive and negative anodes on flange port External water-cooling circulating system and power supply total control switch are opened in end connection movable coil installation's power source (9)；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source (3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5) Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 1 grade of conical pipe, 2 The structure and inlet and outlet layout of grade conical pipe, 3 grades of conical pipes or 4 grades of conical pipes, the internal diameter of entrance conical pipeD IntoGreater than electricity The outer diameter in arc ion plating target source (3), taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (4), perforated baffle it is outer Diameter is matched with the internal diameter of conical pipe, is fixed together by the rivet interlacement of nonmagnetic stainless steel material, between perforated baffle It is attached by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for dismantling assembling and cleaning pollutant, liner is inclined Activity insulation is assembled together between pressure conical pipe and perforated baffle combination unit (6) and multi-stage magnetic field device (4), liner bias Conical pipe and perforated baffle combination unit (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid no liner plate The inside pipe wall pollution of multi-stage magnetic field device (4) and the problem of clearing up is difficult under state, and after effectively target being avoided to replace internally The secondary sputtering of lining bias conical pipe and perforated baffle combination unit (6) surface contaminant causes the pollution of thin film composition；Liner The conical pipe total length of bias conical pipe and perforated baffle combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), it is interior The magnetic fields at different levels of the perforated baffle spacing and multi-stage magnetic field device (4) that serve as a contrast bias conical pipe and perforated baffle combination unit (6) are long Degree matches, and perforated baffle can cooperate the entrance internal diameter of conical pipes at different levels to design baffle size, the pore size of baffle, gear Plate spacing and structure combination are combined the unit according to different targets and technological parameter selection liner bias conical pipe and perforated baffle (6) allocation plan is realized and shields (as shown in Figure 3) to the mechanical stop of bulky grain；
The selection of the material of multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) is nonmagnetic, resistance to clear 304 stainless steel materials of reason, multi-stage magnetic field device (4) determine length, inside and outside according to the diameter of target, cooling, transmission range Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe are filled with perforated baffle combination unit (6) according to according to multi-stage magnetic field The outer diameter for setting (4) internal diameter and arc ion plating target source (3) determines the outer diameter and inner diameter for importing and exporting conical pipe at position, further according to length Degree and rigidity need to select suitable thickness, and perforated baffle is according to needing to select suitable thickness, the size in aperture, type and each The topology layout of grade baffle, is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe and perforated baffle combination unit (6) keep direct current, pulse, more Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type can be adjusted Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees liner bias conical pipe and perforated baffle combination Device (6) attracts bulky grain, repels to depositing ions, and reduction arc-plasma is in pipe in transmission process Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (7), which is -200 ~+200V, Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field Set the probability of (4) and liner bias conical pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), realize to magnetic direction and magnetic The adjusting of field intensity, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) come control from The arc-plasma that multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) transmission come out, benefit With the cooperation (as shown in Figs. 1-2) of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be used 90 degree of classical flexure types, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and bending section The magnetic line of force divided is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line Combination (three sections intersection and tangent combination) and circular arc, straight line and circular arc the allusion quotations such as combination (tangent between three and intersect) The loop construction of type combines, and circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, make It reaches matrix surface with higher efficiency of transmission, overcomes deposition position caused by designing due to vacuum chamber space and target source layout Film caused by limitation or base shape limit deposits problem of non-uniform, carries out the fast deposition of film；Rheostat device (10) output resistance is adjusted, realizes the positive bias variation on movable coil device (8), the electric field that positive bias generates may be implemented pair The arc-plasma that transmission comes out in multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) The attraction of middle electronics and remaining bulky grain, and then increase the number of ions of the arc-plasma exported in movable coil device (8) Mesh increases, and promotes efficiency of transmission of the arc-plasma in movable coil device (8), eliminates remaining bulky grain defect；It is living Moving-wire coil apparatus (8) selects low-resistance copper tube, circle of diameter, thickness and the length of copper pipe according to movable coil device (8) Number, coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission distance From determining；The positive and negative anodes of movable coil installation's power source (9) are according to magnetic field strength, direction and cooling system to movable coil device (8) suitable electric current is provided, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil of entire vacuum system Device (8) exports suitable magnetic field, the path transmission for setting arc-plasma according to movable coil device (8), guarantee pair Matrix surface is reached with high efficiency of transmission while remaining bulky grain is removed, avoids arc-plasma in vacuum chamber (13) The fast deposition of film is realized in middle loss；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee The normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration utilizes movable coil device The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, to remaining bulky grain defect from multi-stage magnetic field device and liner bias conical pipe and perforated baffle combination unit It further removes, reduces loss of the plasma in vacuum chamber transmission process, by the guidance in movable coil magnetic field, further The efficiency of transmission of arc-plasma and the deposition velocity of film are improved, is overcome since vacuum chamber space and the design of target source layout are drawn Film caused by the deposition position limitation risen or base shape limit deposits problem of non-uniform, can be in the optimum bit of vacuum chamber The preparation for realizing film is set, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil The attraction to electronics and remaining bulky grain in arc-plasma, Lai Tisheng electric arc are realized in the adjustment of itself positive bias parameter Efficiency of transmission of the plasma in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Using more Grade magnetic filtering device guarantees that electric arc in the stable motion of target material surface, generates lasting arc plasma by magnetically confined Body, and high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change electric arc are made by the magnetic line of force of multi-stage magnetic field Plasma and the motion path of bulky grain defect are further reduced come the separation both realized and even are eliminated arc-plasma In bulky grain defect；It is multiple to apply direct current, pulse or DC pulse using liner bias conical pipe and perforated baffle combination unit The positive bias of conjunction continue to bulky grain or periodically effectively attract, effectively avoids caused by low melting material big Grain problem continue to depositing ions or periodically repel, can also be vibrated, be subtracted by the bipolar pulse of positive back bias voltage Few loss of the plasma in pipe in transmission process, further increases the efficiency of transmission of arc-plasma and the deposition of film Speed, liner bias conical pipe and perforated baffle combination unit can be by own forms, according to the internal diameter of multi-stage magnetic field device It determining the outer diameter of conical pipe, and determines the outer diameter of perforated baffle, conical pipe needs to select suitable thickness according to length and rigidity, Perforated baffle utilizes conical pipe according to the topology layout for needing to select suitable thickness, the size in aperture, type and baffle at different levels With the Combinatorial Optimization of perforated baffle combination unit, the motion path for limiting bulky grain defect is big in arc-plasma to eliminate Grain defect realizes to the mechanical stop screen effect of bulky grain defect, reduces bulky grain and passes through liner bias conical pipe and more The probability on hole baffle combination device arrival deposited samples surface；Liner bias conical pipe may be implemented with perforated baffle combination unit Fast quick-detach installation, the inside pipe wall for avoiding multi-stage magnetic field device under linerless board status pollute the problem of clearing up, liner bias cone The flexible disassembly of shape pipe and perforated baffle combination unit, cleaning is convenient, it is possible to prevente effectively from after target replacement, to bias conical pipe Secondary sputtering with perforated baffle combination unit surface contaminant causes the pollution of thin film composition；Pulsed bias power supply by adjusting Pulse pattern, pulse amplitude, pulse width and pulse frequency are realized using the inhibition repelling effect of electric field to remaining bulky grain Defect eliminate and optimizes to the adjusting of arc-plasma energy, improves the section potential point of plasma near matrix Cloth sufficiently attracts arc-plasma to workpiece motion s, realizes the fast deposition of film；The microstructure and property of prepared film It can be adjusted by pulsed bias parameter, realize high energy using the type of pulsed bias, amplitude, pulse width and frequency The pinning effect of ion pair film growth, improves the texture and stress state of film growth, improves bond strength, improves thin The service performance of film；Also stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously, has Conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, compound ceramic film, the function of different element ratios are prepared Energy film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；By utilizing combination field and liner Film prepared by the arc ion plating of conical pipe and perforated baffle combined filtration eliminates the bulky grain defect in film, subtracts Lack loss of the arc-plasma in filter device and vacuum chamber, avoids bias conical pipe caused by different targets are replaced Pollution with perforated baffle combination unit surface residues to film, improves the service efficiency of arc-plasma, realizes thin The quick preparation of film is optimized the Energy distribution of arc-plasma using pulsed bias, and can guarantee film crystal tissue It is finer and close with microstructure, be conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, combination field and liner are bored Shape pipe is connected with the arc ion plating of perforated baffle combined filtration, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted Multi-stage magnetic field device (4) is opened liner grid bias power supply (7), and liner bias conical pipe and perforated baffle combination unit (6) keep straight Positive bias is flowed, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8), adjust variable resistance The output resistance of device device (10), technical arrangement plan carry out film deposition, and preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, combination field and liner are bored Shape pipe is connected with the arc ion plating of perforated baffle combined filtration, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted Multi-stage magnetic field device (4) is opened liner grid bias power supply (7), and liner bias conical pipe and perforated baffle combination unit (6) keep straight Positive bias is flowed, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8), adjust variable resistance The output resistance of device device (10), technical arrangement plan carry out film deposition, and combine Traditional DC magnetron sputtering, pulsed magnetic One or two kinds of above method combination of control sputtering, conventional arc ion plating and pulsed cathode arc, then apply directly on workpiece Flow bias, pulsed bias, the compound bias of DC pulse or bipolar pulse biasing device carry out film deposition, other and embodiment party Formula two is identical.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with On arc ion plating target source (3), multi-stage magnetic field device (4), liner bias conical pipe and perforated baffle combination unit (6) and living The combination field of moving-wire coil apparatus (8) combination is carried out with the arc ion plating of liner conical pipe and perforated baffle combined filtration with each Kind pure metal element and multicomponent alloy material are that the film of target deposits, and Traditional DC magnetron sputtering, impulse magnetron is combined to splash It penetrates, one or two kinds of above method combination of conventional arc ion plating and pulsed cathode arc, then application direct current is inclined on workpiece Pressure, pulsed bias or the compound biasing device of DC pulse carry out film deposition, preparation have different stress, microstructure and The multilayer films of element ratio.

Claims (5)

1. the arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration, which is characterized in that the device packet Include grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), interior Serve as a contrast bias conical pipe and perforated baffle combination unit (6), liner grid bias power supply (7), movable coil device (8), movable coil dress Set power supply (9), rheostat device (10) sample stage (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper Mutually insulated between pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are placed on sample Sample platform (11), sample stage (11) connect the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on vacuum chamber (13) on, the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect each of multi-stage magnetic field power supply (5) A output end, positive and negative anodes connection are determined according to output magnetic direction, liner bias conical pipe and perforated baffle combination unit (6) cathode output end of liner grid bias power supply (7) is connect, movable coil device (8) is connected by the positive and negative anodes input terminal on flange port It takes over a job moving winding installation's power source (9), rheostat device (10) is connected with movable coil device (8), access and movable coil device In the circuit of power supply (9), power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12) to 0.01Pa~10Pa, grid bias power supply (1) be direct current, Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
Arc power (2) is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source (3), and adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source (3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5) Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) to design 1 grade of conical pipe, 2 The structure and inlet and outlet layout of grade conical pipe, 3 grades of conical pipes or 4 grades of conical pipes, the internal diameter of entrance conical pipeD IntoGreater than electricity The outer diameter in arc ion plating target source (3), taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (4), perforated baffle it is outer Diameter is matched with the internal diameter of conical pipe, is fixed together by the rivet interlacement of nonmagnetic stainless steel material, between perforated baffle It is attached by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for dismantling assembling and cleaning pollutant, liner is inclined Activity insulation is assembled together between pressure conical pipe and perforated baffle combination unit (6) and multi-stage magnetic field device (4), liner bias Conical pipe and perforated baffle combination unit (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid no liner plate The inside pipe wall pollution of multi-stage magnetic field device (4) and the problem of clearing up is difficult under state, and after effectively target being avoided to replace internally The secondary sputtering of lining bias conical pipe and perforated baffle combination unit (6) surface contaminant causes the pollution of thin film composition；Liner The conical pipe total length of bias conical pipe and perforated baffle combination unit (6)HIt is identical with the length of multi-stage magnetic field device (4), it is interior The magnetic fields at different levels of the perforated baffle spacing and multi-stage magnetic field device (4) that serve as a contrast bias conical pipe and perforated baffle combination unit (6) are long Degree matches, and perforated baffle can cooperate the entrance internal diameter of conical pipes at different levels to design baffle size, the pore size of baffle, gear Plate spacing and structure combination are combined the unit according to different targets and technological parameter selection liner bias conical pipe and perforated baffle (6) allocation plan is realized and is shielded to the mechanical stop of bulky grain；
The selection of the material of multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) is nonmagnetic, resistance to clear 304 stainless steel materials of reason, multi-stage magnetic field device (4) determine length, inside and outside according to the diameter of target, cooling, transmission range Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe are filled with perforated baffle combination unit (6) according to according to multi-stage magnetic field The outer diameter for setting (4) internal diameter and arc ion plating target source (3) determines the outer diameter and inner diameter for importing and exporting conical pipe at position, further according to length Degree and rigidity need to select suitable thickness, and perforated baffle is according to needing to select suitable thickness, the size in aperture, type and each The topology layout of grade baffle, is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe and perforated baffle combination unit (6) keep direct current, pulse, more Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type pass through tune Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees liner bias conical pipe and perforated baffle combination Device (6) attracts bulky grain, repels to depositing ions, and reduction arc-plasma is in pipe in transmission process Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (7), which is -200 ~+200V, Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field Set the probability of (4) and liner bias conical pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled Make the arc plasma come out from multi-stage magnetic field device (4) and liner bias conical pipe and perforated baffle combination unit (6) transmission Body, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 Flexure type is spent, it can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic force of bending part Line is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination of straight line, circular arc and straight line The typical lines such as (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Coil structures combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, make its with compared with High efficiency of transmission reaches matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or Film caused by person's base shape limits deposits problem of non-uniform, carries out the fast deposition of film；Standardsizing rheostat device (10) Output resistance, realize movable coil device (8) on positive bias variation, positive bias generate electric field may be implemented to multistage magnetic Electronics in the arc-plasma that transmission comes out in field device (4) and liner bias conical pipe and perforated baffle combination unit (6) Increase with the ion populations of the attraction of remaining bulky grain, and then the middle arc-plasma exported of increase movable coil device (8), Efficiency of transmission of the arc-plasma in movable coil device (8) is promoted, remaining bulky grain defect is eliminated；Movable coil dress It sets (8) and selects low-resistance copper tube, diameter, thickness and the length of copper pipe are logical according to the number of turns of movable coil device (8), coil Road diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine； The positive and negative anodes of movable coil installation's power source (9) provide conjunction to movable coil device (8) according to magnetic field strength, direction and cooling system The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (8) are defeated Suitable magnetic field out, the path transmission for setting arc-plasma according to movable coil device (8) guarantee to remaining big Matrix surface is reached with high efficiency of transmission while grain is removed, avoids arc-plasma loss in vacuum chamber (13), it is real The fast deposition of existing film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee The normal operation of entire vacuum system.
2. the arc ion plating of combination field according to claim 1 and liner conical pipe and perforated baffle combined filtration, It is characterized in that, institute's use device further includes grid bias power supply kymographion (12), the pulse that display grid bias power supply (1) issues is electric Pressure and current waveform, by adjusting the output waveform of grid bias power supply (1), to from combination field and liner conical pipe and perforated baffle The plated film ion transmitted in the arc ion plating of combined filtration is effectively attracted, carry out sample surfaces film deposition and The ratio of deposition targets element in the film is controlled, the adjusting of plasma energy is realized and it is possible that remaining bulky grain lacks It is trapped into the removing of row electric field repulsion.
3. the arc ion plating of combination field according to claim 1 and liner conical pipe and perforated baffle combined filtration, It is characterized in that, the device is using single set or more set combinations, and combine multi-stage magnetic field device (4), liner bias conical pipe and Perforated baffle combines the unit the multiple types combination of (6) and movable coil device (8), to prepare pure metal film, different elements Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of ratio.
4. the arc ion plating of combination field according to claim 1 and liner conical pipe and perforated baffle combined filtration, It is characterized in that, using single set or covering the device more and combining using Traditional DC magnetron sputtering, pulsed magnetron sputtering, tradition electricity The combination of one or two kinds of above method of arc ion plating and pulsed cathode arc, then application Dc bias, pulse are inclined on workpiece Pressure or DC pulse compound biasing device are realized that the compound of two or more depositional mode carries out film deposition, are come It prepares pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer or gradient-structure Film.
5. the arc ion plating of combination field according to claim 1 and liner conical pipe and perforated baffle combined filtration, It is characterized in that, working gas selects argon gas or working gas to select one kind or more in nitrogen, acetylene, methane, silane or oxygen The mixed gas of kind, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer The film of multilayer or gradient-structure.
CN201711491538.7A 2017-12-30 2017-12-30 The arc ion plating of combination field and liner conical pipe and perforated baffle combined filtration Pending CN109989020A (en)

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CN111748777A (en) * 2020-06-08 2020-10-09 季华实验室 Variable-angle variable-diameter magnetic filtration cathode arc film deposition equipment and method

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CN203498466U (en) * 2013-10-22 2014-03-26 中国科学院金属研究所 Magnetic-control arc-ion-plating composite deposition device
CN105088150A (en) * 2015-09-10 2015-11-25 魏永强 Multilevel magnetic field arc ion plating method with adjustable transmission directions
CN106637097A (en) * 2017-01-22 2017-05-10 魏永强 Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method

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CN203498466U (en) * 2013-10-22 2014-03-26 中国科学院金属研究所 Magnetic-control arc-ion-plating composite deposition device
CN105088150A (en) * 2015-09-10 2015-11-25 魏永强 Multilevel magnetic field arc ion plating method with adjustable transmission directions
CN106637097A (en) * 2017-01-22 2017-05-10 魏永强 Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111748777A (en) * 2020-06-08 2020-10-09 季华实验室 Variable-angle variable-diameter magnetic filtration cathode arc film deposition equipment and method
CN111748777B (en) * 2020-06-08 2022-07-15 季华实验室 Variable-angle variable-diameter magnetic filtration cathode arc film deposition equipment and method

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