CN109989010A - The arc ion plating of combination field and liner special pipe and perforated baffle composite filter - Google Patents
The arc ion plating of combination field and liner special pipe and perforated baffle composite filter Download PDFInfo
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- CN109989010A CN109989010A CN201711489359.XA CN201711489359A CN109989010A CN 109989010 A CN109989010 A CN 109989010A CN 201711489359 A CN201711489359 A CN 201711489359A CN 109989010 A CN109989010 A CN 109989010A
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- 238000000151 deposition Methods 0.000 claims abstract description 43
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- 239000010409 thin film Substances 0.000 claims description 18
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- 238000004544 sputter deposition Methods 0.000 claims description 7
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- 238000009413 insulation Methods 0.000 claims description 6
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- 229910010037 TiAlN Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The arc ion plating of combination field and liner special pipe and perforated baffle composite filter, belongs to technical field of material surface treatment, and the present invention is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field filter device.The present invention include: grid bias power supply, arc ion plating target source, multi-stage magnetic field device, liner bias conical pipe, ladder pipe and perforated baffle combine the unit, movable coil device and corresponding power supply, grid bias power supply kymographion etc.；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, it is adjusted using energy of the grid bias power supply to arc-plasma, it is combined the unit by liner bias conical pipe, ladder pipe and perforated baffle and multi-stage magnetic field device eliminates the bulky grain defect in arc-plasma and improves the efficiency of transmission of filter device, loss in a vacuum chamber is reduced, setting technological parameter prepares film.
Description
Technical field
The present invention relates to the arc ion platings of combination field and liner special pipe and perforated baffle composite filter, belong to material
Expect technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) pollution that proposes the multi-stage magnetic field arc ions electroplating method of liner bias straight tube to solve to inside pipe wall asks
Topic.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the efficiency of transmission of plasma.
Summary of the invention
The invention aims to solve conventional arc ion electroplating method using high-melting-point target, low melting point pure metal or
Multicomponent alloy material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology is drawn
Playing arc-plasma, transmission efficiency is low, target elements are asked using limitation, the uniform ablation of target, film deposition compact degree and defect
Topic, vacuum chamber space and deposition position limitation, workpiece shapes limitation and different target residues in multi-stage magnetic field device are secondary
The problems such as pollution of thin film composition caused by sputtering, in conjunction with multi-stage magnetic field filter method and liner bias conical pipe, ladder pipe and more
The mechanical stop of hole baffle combination device own form shields and biasing electric field attracts compound action eliminates arc plasma
The bulky grain defect contained in body, at the same guarantee arc-plasma with higher efficiency of transmission by liner bias conical pipe,
Ladder pipe and perforated baffle combination unit and multi-stage magnetic field filter device, recycle the control of movable coil device to fill from multi-stage magnetic field
It sets with liner bias conical pipe, ladder pipe and the perforated baffle combination unit arc-plasma that transmits out in a vacuum chamber
Transmission direction realizes the control and regulation to the film deposition and thin film composition on any position substrate work-piece surface in vacuum chamber, gram
It takes vacuum chamber space and target source layout designs caused deposition position limitation or base shape limits caused film deposition not
Uniformity problem is thoroughly removed and is passed from multi-stage magnetic field device and liner bias conical pipe, ladder pipe and perforated baffle combination unit
It is possible to remaining bulky grain defect in the arc-plasma that output comes, makes workpiece surface downward the case where applying back bias voltage
Ion energy, the high-quality thin-film of preparation continuously, fine and close are saved, while being realized to target elements content addition control, reduction in film
Using the production cost of alloys target, the efficiency of transmission of raising arc-plasma, the deposition velocity of increase film and reduce even
Bulky grain defect is eliminated to the adverse effect of film microstructure, continuous compact deposits and service performance, proposes a kind of combination
The arc ion plating in magnetic field and liner special pipe and perforated baffle composite filter.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), multistage magnetic
Field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe, ladder pipe and perforated baffle combine the unit (6), liner bias
Power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat device (10), sample stage (11), bias plasma
Source waveform oscillograph (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, ladder pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are put
It sets in sample stage (11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on very
In empty room (13), the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect multi-stage magnetic field power supply (5)
Each output end, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe, ladder pipe and more
Hole baffle combination device (6) connects the cathode output end of liner grid bias power supply (7), and movable coil device (8) is by flange port
Positive and negative anodes input terminal connects movable coil installation's power source (9), and rheostat device (10) is connected with movable coil device (8), accesses
In the circuit of movable coil installation's power source (9), power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) liner bias
Special-shaped pipe outside diameter, the type of perforated baffle mesoporous, the spacing of size and baffle of conical pipe and ladder pipe combination unit, special pipe
Structure can also cooperate multi-stage magnetic field device (4) design 2 grades of ladder pipes combined with conical pipe, 1 grade of ladder pipe and conical pipe group
It closes or 3 grades of ladder pipe are combined with conical pipe and the structure of the above ladder pipe, gradient difference and inlet and outlet are laid out and combine conical pipe
The difference of entrance between special pipe ladder pipe at different levels and conical pipe, being connected and fixed between baffle, passes through magnetism-free stainless steel
Screw bolt and nut is attached to be fixed with position；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) and multistage
Activity insulation is assembled together between magnetic field device (4), the internal diameter phase interworking of the outer diameter and ladder pipe and conical pipe of perforated baffle
Conjunction passes through the rivet assembly connection of magnetism-free stainless steel together, and liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) cleaning and installation can be dismantled in time with apparent surface pollution level, avoid the pipe of multi-stage magnetic field device (4) under linerless board status
Wall polluting and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner baffle pollutant draw
Play the pollution of thin film composition；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) in perforated baffle spacing with
The length of magnetic field at different levels of multi-stage magnetic field device (4) and conical pipe at different levels are matched with the outlet of ladder pipe, the length of special pipeHWith
The length of multi-stage magnetic field device (4) is identical, the internal diameter of entrance on the right side of special pipeD IntoIt is outer greater than arc ion plating target source (3)
Diameter, and it is less than the internal diameter of multi-stage magnetic field device (4), perforated baffle can cooperate size, the baffle spacing of special pipe design baffle
It is combined with structure, the internal diameter at special pipe left side outletD Out, pore size in perforated baffle, type and baffle at different levels structure
Combination is selected according to different targets and technological parameter, passes through the variation of the internal diameter in special pipe entrance and exit and baffle knot
The mechanical stop shielding to bulky grain may be implemented in structure combination；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, ladder pipe and perforated baffle combine the unit (6) basis
Multi-stage magnetic field device (4) internal diameter determines the outer diameter of special pipe, and conical pipe and ladder pipe at different levels are according to length and rigidity in special pipe
Need to select suitable thickness, the outer diameter of perforated baffle is matched with the internal diameter of special pipe, according to need to select suitable thickness,
The topology layout of the size, type and baffle at different levels in aperture is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) keep direct current, list
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse bias class
The adjustment of the adjustable pulse frequency of type, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe, ladder pipe
Bulky grain is attracted with perforated baffle combination unit (6), depositing ions are repelled, reduces arc-plasma in pipe
Loss in interior transmission process reduces the bulky grain defect even being eliminated in arc-plasma, improves arc-plasma
The deposition velocity of efficiency of transmission and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width
And pulse pattern, periodical or continual and steady attraction is generated to bulky grain defect during the deposition process, greatly reduces big
The probability that grain passes through multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
Make the electric arc come out from multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) transmission
Plasma, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using warp
90 degree of flexure types of allusion quotation, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and bending part
The magnetic line of force is tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line
The typical cases such as combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection)
Loop construction combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, makes it
Matrix surface is reached with higher efficiency of transmission, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (10),
Realize the positive bias variation on movable coil device (8), the electric field that positive bias generates may be implemented to multi-stage magnetic field device (4) and
Electronics and residual in the arc-plasma that transmission comes out in liner bias conical pipe, ladder pipe and perforated baffle combination unit (6)
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (8) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (8) eliminates remaining bulky grain defect；Movable coil device
(8) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (8) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；It is living
It is suitable that the positive and negative anodes of moving winding installation's power source (9) are provided according to magnetic field strength, direction and cooling system to movable coil device (8)
Electric current, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil device (8) output of entire vacuum system
Suitable magnetic field, the path for setting arc-plasma according to movable coil device (8) guarantee to remove remaining bulky grain
While matrix surface reached with high efficiency of transmission, avoid arc-plasma loss in vacuum chamber (13), realize film
Fast deposition；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is lived using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device
Moving winding can using 90 degree classical flexure types, can also using straight line and bending, be bent and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions),
The combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc of straight line, circular arc and straight line are (between three
Tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission path
It needs to be determined, realizes effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias
The further removing of remaining bulky grain defect, reduces arc plasma in conical pipe, ladder pipe and perforated baffle combination unit
Loss of the body in vacuum chamber transmission process further increases the biography of arc-plasma by the guidance in movable coil magnetic field
The deposition velocity of defeated efficiency and film, deposition position limitation, Ke Yi caused by overcoming vacuum chamber space and target source layout to design
The preparation of film is realized in the optimum position of vacuum chamber, can also adjust the series impedance of movable coil by rheostat device,
It realizes the adjustment to movable coil itself positive bias parameter, realizes the suction to electronics and remaining bulky grain in arc-plasma
Draw, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil, eliminate remaining bulky grain defect, increases the heavy of film
Product speed；B. multi-stage magnetic field filter device can guarantee that electric arc in the stable motion of target material surface, is generated by the constraint in magnetic field
Lasting arc-plasma, and keep arc-plasma efficient in multi-stage magnetic field device by the magnetic line of force of multi-stage magnetic field
Transmission changes the motion path of arc-plasma and bulky grain defect also to realize the separation of the two, is further reduced even
Eliminate the bulky grain defect in arc-plasma；C. liner bias conical pipe, ladder pipe and perforated baffle combination unit pass through
Direct current, pulse or the compound positive bias of DC pulse can be applied, bulky grain continue or periodically effectively attracted, it is right
Depositing ions continue or periodically repel, and can also be vibrated by the bipolar pulse of positive back bias voltage, reduce plasma
Loss of the body in pipe in transmission process, further increases the efficiency of transmission of arc-plasma and the deposition velocity of film；d.
Liner bias conical pipe, ladder pipe and perforated baffle combination unit by special pipe entrance and can be gone out by own form
Internal diameter variation and special pipe at mouthful are combined with the structure of baffle, utilize the type of special pipe structure and baffle holes, aperture, Kong Jian
Away from the structure combination between baffle at different levels, the motion path of bulky grain defect is limited to eliminate the bulky grain in arc-plasma
Defect reduces the probability that bulky grain reaches deposited samples surface by porous type retaining device, realizes and hinders the machinery of bulky grain
Baffle plate covers, and the flexible disassembly of liner bias conical pipe, ladder pipe and perforated baffle combination unit, cleaning is convenient, avoids linerless
Under board status multi-stage magnetic field device inside pipe wall pollute cleaning the problem of, and it is possible to prevente effectively from target replacement after liner baffle
The secondary sputtering of pollutant causes the pollution of thin film composition；E. pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, arteries and veins
Width and pulse frequency are rushed, is realized using the inhibition repelling effect of electric field and remaining bulky grain defect eliminate and to electric arc
The adjusting of energy of plasma optimizes；F. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter
It is whole, the pinning effect that energetic ion grows film is realized using the type of pulsed bias, amplitude, pulse width and frequency, is changed
The texture and stress state of kind film growth, improve bond strength, improve the service performance of film；G. by utilizing combination
Film prepared by the arc ion plating of magnetic field and liner special pipe and perforated baffle composite filter, eliminates big in film
Grain defect reduces loss of the arc-plasma in filter device and vacuum chamber, improves making for arc-plasma
With efficiency, the quick preparation of film is realized, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive into one
Step improves the service performance of film.
The arc ion plating of combination field and liner special pipe and perforated baffle composite filter, the device can singly cover or
Person covers combination more, and combine multi-stage magnetic field device (4), liner bias conical pipe, ladder pipe and perforated baffle combine the unit (6) and
The multiple types of movable coil device (8) combine, come prepare pure metal film, different element ratios compound ceramic film,
Function film and film with nanometer multilayer or gradient-structure can also cover using single set or mostly the device and combine using passing
System magnetically controlled DC sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or straight
Pulse compound biasing device is flowed, realizes that the compound of two or more depositional mode carries out film deposition, prepares proof gold
Belong to film, the compound ceramic film of different element ratio, function film and high-quality thin with nanometer multilayer or gradient-structure
Film.
Detailed description of the invention
Fig. 1 is the assembly letter of the combination field of the present invention filter device compound with liner bias ladder pipe and perforated baffle
Figure；Fig. 2 is 7 kinds of topology layouts of movable coil；Fig. 3 is that liner bias conical pipe, ladder pipe and perforated baffle combine the unit
Decomposition texture schematic diagram and special pipe, perforated baffle typical structure diagram.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1,2 and 3, present embodiment combination field and interior
Lining special pipe and perforated baffle composite filter arc ion plating institute use device include grid bias power supply (1), arc power (2),
Arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner bias conical pipe, ladder pipe with it is porous
Baffle combination device (6), liner grid bias power supply (7), movable coil device (8), movable coil installation's power source (9), rheostat dress
Set (10), sample stage (11), grid bias power supply kymographion (12) and vacuum chamber (13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, ladder pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are put
It sets in sample stage (11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on very
In empty room (13), the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect multi-stage magnetic field power supply (5)
Each output end, positive and negative anodes connection can be determined according to output magnetic direction, liner bias conical pipe, ladder pipe and more
Hole baffle combination device (6) connects the cathode output end of liner grid bias power supply (7), and movable coil device (8) is by flange port
Positive and negative anodes input terminal connects movable coil installation's power source (9), opens external water-cooling circulating system and power supply total control switch；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) liner bias
Special-shaped pipe outside diameter, the type of perforated baffle mesoporous, the spacing of size and baffle of conical pipe and ladder pipe combination unit, special pipe
Structure can also cooperate multi-stage magnetic field device (4) design 2 grades of ladder pipes combined with conical pipe, 1 grade of ladder pipe and conical pipe group
It closes or 3 grades of ladder pipe are combined with conical pipe and the structure of the above ladder pipe, gradient difference and inlet and outlet are laid out and combine conical pipe
The difference of entrance between special pipe ladder pipe at different levels and conical pipe, being connected and fixed between baffle, passes through magnetism-free stainless steel
Screw bolt and nut is attached to be fixed with position；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) and multistage
Activity insulation is assembled together between magnetic field device (4), the internal diameter phase interworking of the outer diameter and ladder pipe and conical pipe of perforated baffle
Conjunction passes through the rivet assembly connection of magnetism-free stainless steel together, and liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) cleaning and installation can be dismantled in time with apparent surface pollution level, avoid the pipe of multi-stage magnetic field device (4) under linerless board status
Wall polluting and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner baffle pollutant draw
Play the pollution of thin film composition；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) in perforated baffle spacing with
The length of magnetic field at different levels of multi-stage magnetic field device (4) and conical pipe at different levels are matched with the outlet of ladder pipe, the length of special pipeHWith
The length of multi-stage magnetic field device (4) is identical, the internal diameter of entrance on the right side of special pipeD IntoIt is outer greater than arc ion plating target source (3)
Diameter, and it is less than the internal diameter of multi-stage magnetic field device (4), perforated baffle can cooperate size, the baffle spacing of special pipe design baffle
It is combined with structure, the internal diameter at special pipe left side outletD Out, pore size in perforated baffle, type and baffle at different levels structure
Combination is selected according to different targets and technological parameter, passes through the variation of the internal diameter in special pipe entrance and exit and baffle knot
The mechanical stop shielding to bulky grain may be implemented in structure combination；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, ladder pipe and perforated baffle combine the unit (6) basis
Multi-stage magnetic field device (4) internal diameter determines the outer diameter of special pipe, and conical pipe and ladder pipe at different levels are according to length and rigidity in special pipe
Need to select suitable thickness, the outer diameter of perforated baffle is matched with the internal diameter of special pipe, according to need to select suitable thickness,
The topology layout of the size, type and baffle at different levels in aperture is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) keep direct current, list
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse bias class
The adjustment of the adjustable pulse frequency of type, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe, ladder pipe
Bulky grain is attracted with perforated baffle combination unit (6), depositing ions are repelled, reduces arc-plasma in pipe
Loss in interior transmission process reduces the bulky grain defect even being eliminated in arc-plasma, improves arc-plasma
The deposition velocity of efficiency of transmission and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width
And pulse pattern, periodical or continual and steady attraction is generated to bulky grain defect during the deposition process, greatly reduces big
The probability that grain passes through multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), realize to magnetic direction and magnetic
The adjusting of field intensity, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) come control from
Electric arc that multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) transmission come out etc. from
Daughter makes it reach matrix surface with higher efficiency of transmission, deposition caused by overcoming vacuum chamber space and target source layout to design
Position limitation, carries out the fast deposition of film；Rheostat device (10) adjusts output resistance, realizes on movable coil device (8)
Positive bias variation, positive bias generate electric field may be implemented to multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe
With the attraction for transmitting electronics and remaining bulky grain in the arc-plasma come out in perforated baffle combination unit (6), Jin Erzeng
Add the ion populations of the arc-plasma exported in movable coil device (8) to increase, promotes arc-plasma in active line
Efficiency of transmission in coil apparatus (8) eliminates remaining bulky grain defect；Movable coil device (8) selects low-resistance copper tube,
The diameter of copper pipe, the number of turns of thickness and length foundation movable coil device (8), coil channel diameter, coil shape, coil turn-to-turn
Away from, vacuum chamber size, the transmission path of arc-plasma and transmission range determine；Movable coil installation's power source (9) is just
Cathode provides suitable electric current, the input range of electric current to movable coil device (8) according to magnetic field strength, direction and cooling system
For 0 ~ 2000A, guarantee that the stability of entire vacuum system and movable coil device (8) export suitable magnetic field, make electric arc etc. from
The path that daughter is set according to movable coil device (8), with high efficiency of transmission while guaranteeing to remove remaining bulky grain
Reach matrix surface, avoids arc-plasma loss in vacuum chamber (13), realize the fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) is using high-melting-point target, the pure metal of low melting point or multicomponent alloy material and nonmetallic
Single target, multiple targets or composition target can be used in material (such as graphite), carries out the change of pure metal film, different element ratios
Close object ceramic membrane, function film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The arc ion plating of combination field and liner special pipe and perforated baffle composite filter utilizes movable coil device
Shape and magnetic field magnetic line layout, direction cooperation, effective control to arc-plasma transmission path is realized, to from more
Grade magnetic field device and liner bias conical pipe, ladder pipe are further with bulky grain defect remaining in perforated baffle combination unit
It removes, reduces loss of the plasma in vacuum chamber transmission process and electricity is further increased by the guidance in movable coil magnetic field
The efficiency of transmission of arc plasma and the deposition velocity of film deposit position caused by overcoming vacuum chamber space and target source layout to design
Limitation is set, can realize the preparation of film in the optimum position of vacuum chamber, movable coil can also be adjusted by rheostat device
Series impedance, realize adjustment to movable coil itself positive bias parameter, realize in arc-plasma electronics and
The attraction of remaining bulky grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil are eliminated remaining bulky grain and are lacked
It falls into, increases the deposition velocity of film；Guarantee electric arc in target material surface by magnetically confined using multi-stage magnetic field filter device
Stable motion generates lasting arc-plasma, and makes arc-plasma in multistage magnetic by the magnetic line of force of multi-stage magnetic field
High efficiency of transmission in field device, also change arc-plasma and the motion path of bulky grain defect come the separation both realized,
It is further reduced the bulky grain defect even being eliminated in arc-plasma；Using liner bias conical pipe, ladder pipe with it is porous
Baffle combination device applies direct current, pulse or the compound positive bias of DC pulse, continue to bulky grain or periodically have
Effect attracts, and effectively avoids bulky grain problem caused by low melting material, continue to depositing ions or periodically repel,
It can also be vibrated by the bipolar pulse of positive back bias voltage, reduce loss of the plasma in pipe in transmission process, further
Improve the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias conical pipe, ladder pipe and perforated baffle group
It attaches together and sets and the variation of the internal diameter in special pipe entrance and exit and the structure of special pipe and baffle can be passed through by own form
Combination is combined using the structure between the type of baffle holes, aperture, pitch of holes and baffle at different levels, limits the movement of bulky grain defect
The bulky grain defect in arc-plasma is eliminated in path, is reduced bulky grain by porous type retaining device and is reached deposited samples
The probability on surface realizes the mechanical stop screen effect to bulky grain defect；Liner bias conical pipe, ladder pipe and perforated baffle
The flexible disassembly of combination unit, cleaning is convenient, avoids the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status
Problem, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner baffle pollutant cause the pollution of thin film composition；Arteries and veins
Grid bias power supply is rushed by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency, utilizes the inhibition repelling effect of electric field
Realize and remaining bulky grain defect eliminate and the adjusting of arc-plasma energy is optimized, improve matrix nearby it is equal from
The section Potential Distributing of daughter sufficiently attracts arc-plasma to workpiece motion s, realizes the fast deposition of film；It is prepared thin
The microstructure and properties of film can be adjusted by pulsed bias parameter, wide using the type, amplitude, pulse of pulsed bias
Degree and frequency realize the pinning effect that energetic ion grows film, improve the texture and stress state of film growth, mention
High bond strength improves the service performance of film；Also stablize lasting, ionization level height using the generation of arc ion plating (aip) simultaneously
Metallic plasma, be conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepare different element ratios
Compound ceramic film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；Pass through
Using film prepared by the arc ion plating of combination field and liner special pipe and perforated baffle composite filter, eliminate thin
Bulky grain defect in film reduces loss of the arc-plasma in filter device and vacuum chamber, avoids different targets
Pollution of the liner baffle residue to film, improves the service efficiency of arc-plasma, realizes film caused by replacing
Quickly preparation, the Energy distribution of arc-plasma is optimized using pulsed bias, and can guarantee film crystal tissue and micro-
It is finer and close to see structure, is conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind
Or two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolarity on workpiece
Pulsed bias device carries out film deposition, thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, combination field and liner are different
Shape pipe is connect with the arc ion plating of perforated baffle composite filter, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) direct current positive bias is kept, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8),
The output resistance of standardsizing rheostat device (10), technical arrangement plan, carry out film deposition, preparation have different stress,
The multilayer films of microstructure and element ratio, other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, combination field and liner are different
Shape pipe is connect with the arc ion plating of perforated baffle composite filter, is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (4), opens liner grid bias power supply (7), liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) direct current positive bias is kept, is opened grid bias power supply (1), movable coil installation's power source (9) is opened and adjusts movable coil device (8),
The output resistance of standardsizing rheostat device (10), technical arrangement plan carry out film deposition, and splash in conjunction with Traditional DC magnetic control
It penetrates, one or two kinds of above method combination of pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc, then in workpiece
Upper application Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse biasing device carry out film deposition, other
It is identical as embodiment two.
Specific embodiment 5: present embodiment and embodiment one the difference is that, can be used 2 sets or with
On arc ion plating target source (3), multi-stage magnetic field device (4), liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) and movable coil device (8) combination combination field and liner special pipe and perforated baffle composite filter arc ions
Plating deposit using various pure metal elements and multicomponent alloy material as the film of target, and combination Traditional DC magnetron sputtering,
One or two kinds of above method of pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc combines, then on workpiece
Apply Dc bias, pulsed bias or the compound biasing device of DC pulse and carry out film deposition, preparation have different stress,
The multilayer films of microstructure and element ratio.
Claims (5)
1. the arc ion plating of combination field and liner special pipe and perforated baffle composite filter, which is characterized in that the device
Including grid bias power supply (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5),
Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6), movable coil device (8), are lived at liner grid bias power supply (7)
Moving winding installation's power source (9), rheostat device (10) sample stage (11), grid bias power supply kymographion (12) and vacuum chamber
(13)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (11) in vacuum chamber (13), multi-stage magnetic field device (4), liner bias taper
Mutually insulated between pipe, ladder pipe and perforated baffle combination unit (6), movable coil device (8) and vacuum chamber (13), workpiece are put
It sets in sample stage (11), sample stage (11) connects the cathode output end of grid bias power supply (1), and arc ion plating target source (3) is mounted on very
In empty room (13), the cathode output end of arc power (2) is connect, the magnetic fields at different levels of multi-stage magnetic field device (4) connect multi-stage magnetic field power supply (5)
Each output end, positive and negative anodes connections is determined according to output magnetic direction, liner bias conical pipe, ladder pipe and porous gear
Plate combination unit (6) connects the cathode output end of liner grid bias power supply (7), and movable coil device (8) passes through positive and negative on flange port
Pole input terminal connects movable coil installation's power source (9), and rheostat device (10) is connected with movable coil device (8), accesses and living
In the circuit of moving winding installation's power source (9), power supply total control switch and external water-cooling circulating system are opened；
Film deposition: it will be vacuumized in vacuum chamber (13), to the vacuum degree in vacuum chamber (13) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12) to 0.01Pa~10Pa, grid bias power supply (1) be direct current,
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse width
It adjusts, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse width 1
~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
Multi-stage magnetic field device (4) are adjusted by multi-stage magnetic field power supply (5), keep arc-plasma in arc ion plating target source
(3) stablize and generate and elimination is filtered to bulky grain defect, guarantee the uniformity of target ablation, that improves target utilizes effect
Rate makes arc-plasma with higher efficiency of transmission by multi-stage magnetic field device (4), and multi-stage magnetic field device (4) uses surface
The red copper wire of insulation, according to determining the diameter and the number of turns of line by electric current and magnetic field strength, multi-stage magnetic field power supply (5) is to magnetic at different levels
Field independently powers, and after realizing that the Independent adjustable in magnetic fields at different levels, apparatus structure determine, passes through the defeated of multi-stage magnetic field power supply (5)
Out electric current come adjust multi-stage magnetic field device (4) output magnetic directions at different levels and intensity；
Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) can cooperate multi-stage magnetic field device (4) liner bias
Special-shaped pipe outside diameter, the type of perforated baffle mesoporous, the spacing of size and baffle of conical pipe and ladder pipe combination unit, special pipe
Structure can also cooperate multi-stage magnetic field device (4) design 2 grades of ladder pipes combined with conical pipe, 1 grade of ladder pipe and conical pipe group
It closes or 3 grades of ladder pipe are combined with conical pipe and the structure of the above ladder pipe, gradient difference and inlet and outlet are laid out and combine conical pipe
The difference of entrance between special pipe ladder pipe at different levels and conical pipe, being connected and fixed between baffle, passes through magnetism-free stainless steel
Screw bolt and nut is attached to be fixed with position；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) and multistage
Activity insulation is assembled together between magnetic field device (4), the internal diameter phase interworking of the outer diameter and ladder pipe and conical pipe of perforated baffle
Conjunction passes through the rivet assembly connection of magnetism-free stainless steel together, and liner bias conical pipe, ladder pipe and perforated baffle combine the unit
(6) cleaning and installation can be dismantled in time with apparent surface pollution level, avoid the pipe of multi-stage magnetic field device (4) under linerless board status
Wall polluting and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner baffle pollutant draw
Play the pollution of thin film composition；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) in perforated baffle spacing with
The length of magnetic field at different levels of multi-stage magnetic field device (4) and conical pipe at different levels are matched with the outlet of ladder pipe, the length of special pipeHWith
The length of multi-stage magnetic field device (4) is identical, the internal diameter of entrance on the right side of special pipeD IntoIt is outer greater than arc ion plating target source (3)
Diameter, and it is less than the internal diameter of multi-stage magnetic field device (4), perforated baffle can cooperate size, the baffle spacing of special pipe design baffle
It is combined with structure, the internal diameter at special pipe left side outletD Out, pore size in perforated baffle, type and baffle at different levels structure
Combination is selected according to different targets and technological parameter, passes through the variation of the internal diameter in special pipe entrance and exit and baffle knot
The mechanical stop shielding to bulky grain may be implemented in structure combination；
The material of multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) is selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (4) determines length according to the diameter of target, cooling, transmission range
Degree, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, ladder pipe and perforated baffle combine the unit (6) basis
Multi-stage magnetic field device (4) internal diameter determines the outer diameter of special pipe, and conical pipe and ladder pipe at different levels are according to length and rigidity in special pipe
Need to select suitable thickness, the outer diameter of perforated baffle is matched with the internal diameter of special pipe, according to need to select suitable thickness,
The topology layout of the size, type and baffle at different levels in aperture is processed according to actual design parameter；
It opens liner grid bias power supply (7), liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) keep direct current, list
Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse bias class
Type guarantees liner bias conical pipe, ladder pipe by adjusting pulse frequency, pulse width and pulse pattern, the adjustment of output voltage
Bulky grain is attracted with perforated baffle combination unit (6), depositing ions are repelled, reduces arc-plasma in pipe
Loss in interior transmission process reduces the bulky grain defect even being eliminated in arc-plasma, improves arc-plasma
The deposition velocity of efficiency of transmission and film, the voltage parameter of liner grid bias power supply (7) are -200 ~+200V, are direct current, simple venation
Punching, multiple-pulse, DC pulse be compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width
And pulse pattern, periodical or continual and steady attraction is generated to bulky grain defect during the deposition process, greatly reduces big
The probability that grain passes through multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6)；
It opens movable coil installation's power source (9), adjusts the input current of movable coil device (8), while realizing to magnetic direction
With the adjusting of magnetic field strength, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (8) are controlled
Make the electric arc come out from multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (6) transmission
Plasma, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using warp
90 degree of flexure types of allusion quotation, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and bending part
The magnetic line of force is tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line
The typical cases such as combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection)
Loop construction combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, makes it
Matrix surface is reached with higher efficiency of transmission, deposition position limitation caused by overcoming vacuum chamber space and target source layout to design,
Carry out the fast deposition of film；The output resistance of standardsizing rheostat device (10) realizes the positive bias on movable coil device (8)
Variation, the electric field that positive bias generates may be implemented to multi-stage magnetic field device (4) and liner bias conical pipe, ladder pipe and porous gear
Plate combines the unit the attraction of electronics and remaining bulky grain in the arc-plasma that transmission comes out in (6), and then increases active line
The ion populations of the arc-plasma exported in coil apparatus (8) increase, and promote arc-plasma in movable coil device (8)
In efficiency of transmission, eliminate remaining bulky grain defect；Movable coil device (8) selects low-resistance copper tube, copper pipe it is straight
The number of turns, coil channel diameter, coil shape, the coil turn spacing, vacuum of diameter, thickness and length according to movable coil device (8)
Room size, the transmission path of arc-plasma and transmission range determine；The positive and negative anodes foundation of movable coil installation's power source (9)
Magnetic field strength, direction and cooling system provide suitable electric current to movable coil device (8), and the input range of electric current is 0 ~
2000A guarantees that the stability of entire vacuum system and movable coil device (8) export suitable magnetic field, makes arc-plasma
According to the path that movable coil device (8) are set, guarantee to reach while removing remaining bulky grain with high efficiency of transmission
Matrix surface avoids arc-plasma loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), multi-stage magnetic field device (4) and movable coil device (8) use direct water-cooling mode, avoid work
Temperature during work increases problem, has external water cooling unit system to provide enough cooling water flows and cooling temperature, to guarantee
The normal operation of entire vacuum system.
2. the arc ions of combination field according to claim 1 and liner special pipe and perforated baffle composite filter
Plating, which is characterized in that institute's use device further includes grid bias power supply kymographion (12), the arteries and veins that display grid bias power supply (1) issues
Rush voltage and current waveform, by adjusting the output waveform of grid bias power supply (1), to from combination field and liner special pipe with it is porous
The plated film ion transmitted in the arc ion plating of baffle composite filter is effectively attracted, and sample surfaces film is carried out
The ratio of deposition and control deposition targets element in the film realizes the adjusting of plasma energy and is possible to remaining big
Grain defect carries out electric field repulsion removing.
3. the arc ions of combination field according to claim 1 and liner special pipe and perforated baffle composite filter
Plating, which is characterized in that the device combines multi-stage magnetic field device (4), liner bias taper using single set or more set combinations
Pipe, ladder pipe are combined with the multiple types of perforated baffle combination unit (6) and movable coil device (8), thin to prepare pure metal
Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of film, different element ratios.
4. the arc ions of combination field according to claim 1 and liner special pipe and perforated baffle composite filter
Plating, which is characterized in that using single set or cover the device more and combine using Traditional DC magnetron sputtering, pulsed magnetron sputtering, biography
The combination of one or two kinds of above method of system arc ion plating and pulsed cathode arc, then apply Dc bias, arteries and veins on workpiece
Bias or the compound biasing device of DC pulse are rushed, realizes the compound heavy to carry out film of two or more depositional mode
Product, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer or gradient
The film of structure.
5. the arc ions of combination field according to claim 1 and liner special pipe and perforated baffle composite filter
Plating, which is characterized in that it is a kind of in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Or a variety of mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and have
The film of nanometer multilayer or gradient-structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711489359.XA CN109989010A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner special pipe and perforated baffle composite filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711489359.XA CN109989010A (en) | 2017-12-30 | 2017-12-30 | The arc ion plating of combination field and liner special pipe and perforated baffle composite filter |
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| CN106756823A (en) * | 2017-01-22 | 2017-05-31 | 魏永强 | Liner positive bias conical pipe and the compound multi-stage magnetic field arc ions electroplating method of straight tube |
| CN206616266U (en) * | 2017-01-22 | 2017-11-07 | 魏永强 | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080105657A1 (en) * | 2006-11-03 | 2008-05-08 | Atomic Energy Council - Institute Of Nuclear Energy Research | Macroparticle-filtered coating plasma source device |
| CN105088150A (en) * | 2015-09-10 | 2015-11-25 | 魏永强 | Multilevel magnetic field arc ion plating method with adjustable transmission directions |
| CN106637097A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method |
| CN106676482A (en) * | 2017-01-22 | 2017-05-17 | 魏永强 | Lining step tube and porous baffle composite type multi-level magnetic field arc ion plating method |
| CN106756823A (en) * | 2017-01-22 | 2017-05-31 | 魏永强 | Liner positive bias conical pipe and the compound multi-stage magnetic field arc ions electroplating method of straight tube |
| CN206616266U (en) * | 2017-01-22 | 2017-11-07 | 魏永强 | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating |
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