CN109989011A

CN109989011A - A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle

Info

Publication number: CN109989011A
Application number: CN201711489750.XA
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 张新国; 刘学申; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2017-12-30
Publication date: 2019-07-09

Abstract

A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: arc ion plating target source, multi-stage magnetic field device, liner bias special pipe and perforated baffle combination unit, movable coil device, high-power impulse magnetron sputtering target source and line related, Waveform Matching device, grid bias power supply etc.；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10^‑ ⁴When Pa, lead to working gas, opens plated film power supply, the energy of grid bias power supply adjusting plasma, combination field and liner special pipe and perforated baffle device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.

Description

A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle

Technical field

The present invention relates to a kind of combination fields and liner special pipe and the compound vacuum deposition method of perforated baffle, belong to material Expect technical field of surface.

Background technique

During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 10¹⁰A/m², cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.

Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm², the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm², the density of plasma reaches 10¹⁸m^-3The order of magnitude, central region ion concentration Up to 10¹⁹m^-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.

Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.

It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.

Summary of the invention

The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from Daughter combines the unit own form in conjunction with multi-stage magnetic field filter method and liner bias conical pipe, ladder pipe and perforated baffle The compound action that constraint and biasing electric field attract eliminates the bulky grain defect contained in arc-plasma, while guaranteeing electric arc Plasma passes through liner bias conical pipe, ladder pipe and perforated baffle combination unit and multi-stage magnetic field with higher efficiency of transmission Filter device recycles the compound action of magnetically confined and the attraction of itself biasing electric field of movable coil device to eliminate from multistage Contain in the arc-plasma that magnetic field device and liner bias conical pipe, ladder pipe transmit out with perforated baffle combination unit Bulky grain defect, while using movable coil device control high-power impulse magnetron sputtering and arc ion plating it is compound etc. from The transmission direction of daughter in a vacuum chamber, realize in vacuum chamber any position substrate work-piece surface film deposition and film at Point control and regulation, reduce compound plasma in the indoor loss of vacuum, overcome due to vacuum chamber and target source position limitation or Film caused by person's base shape limits deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field device and liner bias taper It is possible to remaining bulky grain defect in the arc-plasma for transmitting out in pipe, ladder pipe and perforated baffle combination unit, So that workpiece surface is adjusted ion energy in the case where applying back bias voltage, is removed using the biasing electric field inhibiting effect of matrix surface Bulky grain defect in arc-plasma, the high-quality thin-film that preparation is continuous, fine and close, while realizing and target elements in film are contained Amount addition control reduces the production cost using alloys target, improves the efficiency of transmission of plasma, increases the deposition velocity of film With decrease or even eliminate bulky grain defect to the adverse effect of film microstructure, continuous compact deposits and service performance, propose A kind of combination field and liner special pipe and perforated baffle compound vacuum deposition method.

Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, Ladder pipe and perforated baffle combination unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16), Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction Fixed, liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) connect the cathode output end of liner grid bias power supply (15), Open power supply total control switch and external water-cooling circulating system；

Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10^-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；

It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；

It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；

It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity；

Liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) can cooperate multi-stage magnetic field device (12) liner inclined Press special-shaped pipe outside diameter, the type of perforated baffle mesoporous, the spacing of size and baffle of conical pipe and ladder pipe combination unit, abnormity The structure of pipe can also cooperate multi-stage magnetic field device (12) design 2 grades of ladder pipes combined with conical pipe, 1 grade of ladder pipe and conical pipe It combines or 3 grades of ladder pipe are combined with conical pipe and the structure of the above ladder pipe, gradient difference and inlet and outlet are laid out and combine taper The difference of passage between special pipe ladder pipe at different levels and conical pipe, being connected and fixed between baffle, passes through magnetism-free stainless steel Screw bolt and nut be attached and fixed with position；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) with Activity insulation is assembled together between multi-stage magnetic field device (12), the internal diameter phase of the outer diameter and ladder pipe and conical pipe of perforated baffle Together, liner bias conical pipe, ladder pipe combine the mutual rivet assembly connection for fitting through magnetism-free stainless steel with perforated baffle Device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid multi-stage magnetic field device under linerless board status (12) inside pipe wall pollution and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement liner baffle pollutant two It is secondary to sputter the pollution for causing thin film composition；Liner bias conical pipe, ladder pipe combine the unit porous in (14) with perforated baffle Baffle spacing is matched with the length of magnetic field at different levels of multi-stage magnetic field device (12) and conical pipe at different levels with the outlet of ladder pipe, abnormity The length of pipeHIt is identical with the length of multi-stage magnetic field device (12), the internal diameter of entrance on the right side of special pipeD _IntoGreater than arc ion plating The outer diameter in target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), perforated baffle can cooperate the big of special pipe design baffle Small, baffle spacing and structure combine, the internal diameter at special pipe left side outletD _Out, pore size in perforated baffle, type and each The structure combination of grade baffle is selected according to different targets and technological parameter, passes through the internal diameter of special pipe entrance and exit The mechanical stop shielding to bulky grain may be implemented in variation and baffle arrangement combination；

The material of multi-stage magnetic field device (12) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) selects nothing 304 stainless steel materials of magnetic, resistance to cleaning, multi-stage magnetic field device (12) are determined according to the diameter of target, cooling, transmission range Length, internal-and external diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe, ladder pipe and perforated baffle combine the unit (14) root Determine the outer diameter of special pipe according to multi-stage magnetic field device (12) internal diameter, conical pipe and ladder pipe at different levels are according to length and rigid in special pipe Degree needs to select suitable thickness, and the outer diameter of perforated baffle is matched with the internal diameter of special pipe, suitable thick according to needing to select The topology layout of degree, the size in aperture, type and baffle at different levels is processed according to actual design parameter；

It opens liner grid bias power supply (15), liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) holding direct current, Pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, wherein pulse, multiple-pulse or bipolar pulse bias The adjustment of the adjustable pulse frequency of type, pulse width and pulse pattern, output voltage guarantees liner bias conical pipe, ladder Pipe attracts bulky grain with perforated baffle combination unit (14), repels to depositing ions, reduces arc-plasma Loss in pipe in transmission process reduces the bulky grain defect even being eliminated in arc-plasma, improves arc plasma The efficiency of transmission of body and the deposition velocity of film, the voltage parameter of liner grid bias power supply (15) are -200 ~+200V, be direct current, Pulse, multiple-pulse, DC pulse be compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse Width and pulse pattern generate periodical or continual and steady attraction to bulky grain defect during the deposition process, greatly reduce The machine that bulky grain passes through multi-stage magnetic field device (12) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) Rate；

It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；

Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission road of the arc-plasma come out with liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) transmission Diameter, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 Flexure type is spent, it can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic force of bending part Line is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination of straight line, circular arc and straight line The typical lines such as (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Coil structures combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, are realized and big The separation of grain defect makes it reach matrix surface with higher efficiency of transmission, overcomes due to vacuum chamber space and target source layout Film caused by the limitation of deposition position caused by designing or base shape limit deposits problem of non-uniform, carries out the quick of film Deposition, multi-stage magnetic field device (12) are filtered elimination to the bulky grain defect in arc-plasma, guarantee target ablation Uniformity improves the utilization efficiency of target, overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption is asked Topic makes compound plasma with higher efficiency of transmission by movable coil device (9), while realizing to magnetic direction and magnetic field The adjusting of intensity, pilot arc plasma and high-power impulse magnetron sputtering plasma reach any in vacuum chamber (13) The matrix surface of arbitrary shape, the coil turn of movable coil device (9), coil-span, shape on position or sample stage (12) Compound plasma is controlled with the adjustings such as transmission path, is reduced loss of the compound plasma in vacuum chamber (13), is removed Bulky grain defect in arc-plasma, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11), it is real Positive bias variation on existing movable coil device (9), the electric field that positive bias generates may be implemented to electronics in arc-plasma Increase with the ion populations of the attraction of remaining bulky grain, and then the middle arc-plasma exported of increase movable coil device (9), Efficiency of transmission of the arc-plasma in movable coil device (9) is promoted, remaining bulky grain defect is eliminated；Movable coil dress It sets (9) and selects low-resistance copper tube, diameter, thickness and the length of copper pipe are logical according to the number of turns of movable coil device (9), coil Road diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine； The positive and negative anodes of movable coil installation's power source (10) are provided according to magnetic field strength, direction and cooling system to movable coil device (9) The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees the stability and movable coil device (9) of entire vacuum system Suitable magnetic field is exported, the path transmission for setting compound plasma according to movable coil device (9) guarantees to the big of remnants Matrix surface is reached with high efficiency of transmission while particle is removed, avoids compound plasma loss in vacuum chamber (13), Realize the fast deposition of film；

Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.

According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.

Advantages of the present invention: a. eliminates current high power using the bipolarity feature of high-power impulse magnetron sputtering power supply The problem of charge accumulated of pulsed magnetron sputtering electric discharge causes sparking and ion resorption recycles arc ions electroplating method to realize high Fusing point difficulty ionization target generates the plasma of continual and steady, high ionization level, and high-power impulse magnetron sputtering technology passes through high pressure Low-frequency pulse realizes the higher metallic ionization level of target, other auxiliary ionization devices is not needed, for the pure of low melting point Metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si bulky grain defect) is not generated, it can also be using two different unit targets or unit and polynary and two kinds of polynary targets The combination such as material realizes that the plasma of multiple elements design generates, and then can deposit various units, polynary and type of compounds and not With the film of element ratio；B. arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source It is difficult to the limitation of ionization with high-melting-point target, guarantees that the high density of depositing ions persistently generates；C. due to using synchronous waveform Coalignment can make matrix effectively attract ion caused by high-power impulse magnetron sputtering target source, reduce high power arteries and veins Magnetron sputtering technique is rushed to the resorption effect of produced ion, film deposition rate is ensure that, makes the energy of depositing ions significantly It improves；D. by adjusting the technological parameter in high-power impulse magnetron sputtering target source, join in conjunction with the technique in arc ion plating target source Number, may be implemented the ion ratio of various elements in compound plasma, realize the film deposition of different element ratios；E. institute The microstructure and properties for preparing film can be adjusted by pulsed bias parameter, utilize the amplitude of pulsed bias, pulse Width and frequency realize the pinning effect that energetic ion grows film, improve the texture and stress state of film growth, Improving film substrate bond strength improves the service performance of film；F. due to eliminating the pure metal (such as aluminium, tin) or more of low melting point First alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) are in arc ion plating Using limitation, the bulky grain defect of low melting point element is avoided, these elements in original multi-element film preparation process may be implemented Addition and ratio be adjusted flexibly, prepared film crystal tissue is finer and close, can be further improved the mechanics of film Performance；G. using the cooperation of the shape of movable coil device and magnetic field magnetic line layout, direction, movable coil can be using warp 90 degree of flexure types of allusion quotation, can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and bending part The magnetic line of force is tangent, intersection), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line The typical cases such as combination (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Loop construction combination, circular arc and straight line portion therein be determined according to the needs of spatial position and transmission path, realizes Effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner bias conical pipe, ladder pipe and more The further removing of remaining bulky grain defect in the baffle combination device of hole overcomes the electric discharge of high-power impulse magnetron sputtering technology Unstable and ion resorption problem, reduces loss of the compound plasma in vacuum chamber transmission process, passes through movable coil The guidance in magnetic field further increases the efficiency of transmission of compound plasma and the deposition velocity of film, overcomes due to vacuum chamber sky Between and target source layout design caused by deposition position limitation or base shape limit caused by film deposit problem of non-uniform, can To realize the preparation of film in the optimum position of vacuum chamber, the series electrical of movable coil can also be adjusted by rheostat device Resistance value realizes the adjustment to movable coil itself positive bias parameter, realizes to the electronics and big of remnants in arc-plasma The attraction of grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining bulky grain defect, increase thin The deposition velocity of film；H. multi-stage magnetic field filter device can guarantee that electric arc is transported in stablizing for target material surface by the constraint in magnetic field It is dynamic, lasting arc-plasma is generated, and make arc-plasma in multi-stage magnetic field device by the magnetic line of force of multi-stage magnetic field In high efficiency of transmission, also change arc-plasma and the motion path of bulky grain defect are come the separation both realized, further Decrease or even eliminate the bulky grain defect in arc-plasma；I. liner bias conical pipe, ladder pipe are combined with perforated baffle Device, which passes through, can apply direct current, pulse or the compound positive bias of DC pulse, continue to bulky grain or periodically have Effect attracts, and continue to depositing ions or periodically repel, can also be vibrated, be subtracted by the bipolar pulse of positive back bias voltage Few loss of the plasma in pipe in transmission process, further increases the efficiency of transmission of arc-plasma and the deposition of film Speed；J. liner bias conical pipe, ladder pipe and perforated baffle combination unit can by own form, by special pipe into Mouthful at and exit internal diameter variation and special pipe combined with the structure of baffle, using the type of special pipe structure and baffle holes, Structure combination between aperture, pitch of holes and baffle at different levels, limits the motion path of bulky grain defect to eliminate arc-plasma In bulky grain defect, reduce bulky grain by porous type retaining device reach deposited samples surface probability, realize to big The mechanical stop shielding of grain, the flexible disassembly of liner bias conical pipe, ladder pipe and perforated baffle combination unit, cleaning is convenient, The problem of avoiding the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, and it is possible to prevente effectively from target is replaced The secondary sputtering of liner baffle pollutant causes the pollution of thin film composition afterwards；K. pulsed bias power supply by adjusting pulse pattern, Pulse amplitude, pulse width and pulse frequency are realized using the inhibition repelling effect of electric field and are carried out to remaining bulky grain defect It eliminates and the adjusting of compound plasma energy is optimized；L. the microstructure and properties of prepared film can be inclined by pulse Pressure parameter is adjusted, and realizes what energetic ion grew film using the type of pulsed bias, amplitude, pulse width and frequency Pinning effect improves the texture and stress state of film growth, improves bond strength, improves the service performance of film；m. By eliminating using film prepared by a kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle Bulky grain defect in film, reduces loss of the compound plasma in filter device and vacuum chamber, improves compound The service efficiency of plasma, realizes the quick preparation of film, and can guarantee that film crystal tissue and microstructure more cause It is close, be conducive to the service performance for further increasing film.

A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle, the device can singly cover or Person covers combination more, and combines the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias taper Pipe, ladder pipe are combined with the multiple types of perforated baffle combination unit (14) and movable coil device (9), realize different wave The transmission path of Optimized Matching, multi-stage magnetic field and movable coil magnetic field guides, and prepares proof gold in the indoor any position of vacuum Belong to compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of film, different element ratios, The device can be covered using single set or mostly and combined using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion Plating and the one or two kinds of above method combination of pulsed cathode arc, then it is compound using Dc bias, pulsed bias or DC pulse Bias realizes that the compound of two or more depositional mode carries out film deposition, prepares pure metal film, different elements Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure of ratio.

Detailed description of the invention

Fig. 1 is the assembly letter of a kind of combination field of the present invention and the compound vacuum deposition method of liner bias perforated baffle Figure；Fig. 2 is 6 kinds of topology layouts of movable coil；Fig. 3 is that liner bias conical pipe, ladder pipe and perforated baffle combine the unit The typical structure schematic diagram of assembling structure disassembled schematic and special pipe, perforated baffle；Fig. 4 is synchronous waveform coalignment, high power Pulsed magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and high-power impulse magnetron sputtering unipolarity single pulse waveforms The matching figure of integral multiple, out of phase and different pulse widths.

Specific embodiment

Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-4, a kind of combination field of present embodiment and interior It serves as a contrast special pipe and the compound vacuum deposition method institute use device of perforated baffle includes grid bias power supply (1), arc power (2), electric arc Ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply wave Kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil Device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, ladder pipe and perforated baffle combine the unit (14), liner grid bias power supply (15), sample stage (16) With vacuum chamber (17)；

In the device:

Liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) can cooperate multi-stage magnetic field device (12) liner inclined Press special-shaped pipe outside diameter, the type of perforated baffle mesoporous, the spacing of size and baffle of conical pipe and ladder pipe combination unit, abnormity The structure of pipe can also cooperate multi-stage magnetic field device (12) design 2 grades of ladder pipes combined with conical pipe, 1 grade of ladder pipe and conical pipe It combines or 3 grades of ladder pipe are combined with conical pipe and the structure of the above ladder pipe, gradient difference and inlet and outlet are laid out and combine taper The difference of passage between special pipe ladder pipe at different levels and conical pipe, being connected and fixed between baffle, passes through magnetism-free stainless steel Screw bolt and nut be attached and fixed with position；Liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) with Activity insulation is assembled together between multi-stage magnetic field device (12), the internal diameter phase of the outer diameter and ladder pipe and conical pipe of perforated baffle Together, liner bias conical pipe, ladder pipe combine the mutual rivet assembly connection for fitting through magnetism-free stainless steel with perforated baffle Device (6) can dismantle in time cleaning and installation with apparent surface pollution level, avoid multi-stage magnetic field device under linerless board status (12) inside pipe wall pollution and be difficult to the problem of clearing up, and it is possible to prevente effectively from after target replacement liner baffle pollutant two It is secondary to sputter the pollution for causing thin film composition；Liner bias conical pipe, ladder pipe combine the unit porous in (14) with perforated baffle Baffle spacing is matched with the length of magnetic field at different levels of multi-stage magnetic field device (12) and conical pipe at different levels with the outlet of ladder pipe, abnormity The length of pipeHIt is identical with the length of multi-stage magnetic field device (12), the internal diameter of entrance on the right side of special pipeD _IntoGreater than arc ion plating The outer diameter in target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), perforated baffle can cooperate the big of special pipe design baffle Small, baffle spacing and structure combine, the internal diameter at special pipe left side outletD _Out, pore size in perforated baffle, type and each The structure combination of grade baffle is selected according to different targets and technological parameter, passes through the internal diameter of special pipe entrance and exit Variation and baffle arrangement combination may be implemented to shield (as shown in Figure 3) to the mechanical stop of bulky grain；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission road of the arc-plasma come out with liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) transmission Diameter, using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 Flexure type is spent, it can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic force of bending part Line is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination of straight line, circular arc and straight line The typical lines such as (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Coil structures combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path (such as Fig. 1-2 institute Show), it realizes the separation with bulky grain defect, it is made to reach matrix surface with higher efficiency of transmission, overcome due to vacuum chamber sky Between and target source layout design caused by deposition position limitation or base shape limit caused by film deposit problem of non-uniform, into The fast deposition of row film, multi-stage magnetic field device (12) and liner bias conical pipe, ladder pipe and perforated baffle combine the unit (14) elimination is filtered to the bulky grain defect in arc-plasma, guarantees the uniformity of target ablation, improves target Utilization efficiency overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound plasma With higher efficiency of transmission by movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, guidance electricity Arc plasma and high-power impulse magnetron sputtering plasma reach any position or sample stage (12) in vacuum chamber (13) The matrix surface of upper arbitrary shape, coil turn, coil-span, shape and transmission path of movable coil device (9) etc. are adjusted It controls compound plasma, reduces loss of the compound plasma in vacuum chamber (13), remove in arc-plasma Bulky grain defect carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes movable coil device (9) the positive bias variation on, the electric field that positive bias generates may be implemented to electronics in arc-plasma and remaining bulky grain Attract, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc plasma Efficiency of transmission of the body in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low electricity The copper tube of resistance, the number of turns, coil channel diameter, coil shape of diameter, thickness and the length of copper pipe according to movable coil device (9) Shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil device The positive and negative anodes of power supply (10) provide suitable electric current, electricity to movable coil device (9) according to magnetic field strength, direction and cooling system The input range of stream is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic , the path transmission for setting compound plasma according to movable coil device (9) guarantees to remove remaining bulky grain same The efficiency of transmission of Shi Yigao reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the fast of film Speed deposition；

The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.

Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.

Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.

It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.

A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle, make full use of high power arteries and veins Rush magnetron sputtering power supply bipolarity feature eliminate the electric discharge of current high-power impulse magnetron sputtering charge accumulated cause sparking and The problem of ion resorption, recycles arc ions electroplating method to realize that high-melting-point difficulty ionization target generates continual and steady, high ionization level Plasma, high-power impulse magnetron sputtering technology by high pressure low-frequency pulse realize the higher metallic ionization of target Rate does not need other auxiliary ionization devices, for low melting point pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect, can also use two kinds The combination such as different unit targets or unit and polynary and two kinds of multicomponent target materials realizes that the plasma of multiple elements design produces It is raw, and then the film of various units, polynary and type of compounds and different element ratios can be deposited；Synchronous waveform is utilized simultaneously Coalignment controls applied back bias voltage and high-power impulse magnetron sputtering technological parameter on workpiece, is conducive to improve high power arteries and veins The Potential Distributing in magnetic controlled sputtering target source plasma section is rushed, sufficiently attracts the ion of high-power impulse magnetron sputtering generation to work Part movement, effectively solves the problems, such as that high-power impulse magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Simultaneously Stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip), makes up high power pulse magnetic control and splash The defect for penetrating technology discharge instability is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares different members The compound ceramic film of plain ratio, function film, multi-component multi-layer, superlattices and film with gradient-structure or pure metal are thin Film.Using the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, movable coil can be using classical 90 Flexure type is spent, it can also be using straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic force of bending part Line is tangent, intersects), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), the combination of straight line, circular arc and straight line The typical lines such as (three sections of intersections and tangent combination) and the combination of circular arc, straight line and circular arc (tangent between three and intersection) Coil structures combination, circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, are realized to electricity Effective control of arc plasma and high-power impulse magnetron sputtering Plasma Transport path, to from multi-stage magnetic field device and interior Remaining bulky grain defect in the arc-plasma for transmitting out in lining bias conical pipe, ladder pipe and perforated baffle combination unit It is purged, overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, reduce composite plasma Loss of the body in vacuum chamber transmission process further increases the biography of compound plasma by the guidance in movable coil magnetic field The deposition velocity of defeated efficiency and film, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or Film caused by base shape limits deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, also The series impedance of movable coil can be adjusted by rheostat device, realize the tune to movable coil itself positive bias parameter It is whole, realize that Lai Tisheng arc-plasma is in movable coil to the attraction of electronics and remaining bulky grain in arc-plasma In efficiency of transmission, eliminate remaining bulky grain defect, increase the deposition velocity of film；Utilize the logical of multi-stage magnetic field filter device It crosses magnetically confined and guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and pass through multi-stage magnetic field The magnetic line of force make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc-plasma and bulky grain lacks Sunken motion path is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；Benefit Apply direct current, pulse or the compound positive bias of DC pulse with liner bias conical pipe, ladder pipe and perforated baffle combination unit, Bulky grain continue or is periodically effectively attracted, bulky grain problem caused by low melting material is effectively avoided, to heavy Product ion continue or periodically repels, and can also be vibrated by the bipolar pulse of positive back bias voltage, reduces plasma Loss in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition velocity of film, liner Bias conical pipe, ladder pipe and perforated baffle combination unit can pass through special pipe entrance and exit by own form Internal diameter variation and special pipe combined with the structure of baffle, using the type of special pipe structure and baffle holes, aperture, pitch of holes and Structure combination between baffles at different levels, limits the motion path of bulky grain defect and lacks to eliminate the bulky grain in arc-plasma It falls into, reduces the probability that bulky grain reaches deposited samples surface by porous type retaining device, realize the mechanical stop to bulky grain Shielding, the flexible disassembly of liner bias conical pipe, ladder pipe and perforated baffle combination unit, cleaning is convenient, avoids no liner plate The inside pipe wall of multi-stage magnetic field device pollutes the problem of cleaning under state, and it is possible to prevente effectively from liner baffle is dirty after target replacement The secondary sputtering of dye object causes the pollution of thin film composition；Pulsed bias power supply is wide by adjusting pulse pattern, pulse amplitude, pulse Degree and pulse frequency, using electric field inhibition repelling effect realize to remaining bulky grain defect carry out eliminate and to it is compound etc. from The adjusting of daughter energy optimizes, and improves the section Potential Distributing of the neighbouring plasma of matrix, sufficiently attract compound plasma to Workpiece motion s realize the fast deposition of film；The microstructure and properties of prepared film can by pulsed bias parameter into Row adjustment realizes that energetic ion imitates the pinning that film is grown using the type of pulsed bias, amplitude, pulse width and frequency It answers, improves the texture and stress state of film growth, improve bond strength, improve the service performance of film；It is also sharp simultaneously Stablize metallic plasma lasting, that ionization level is high with the generation of arc ion plating (aip), is conducive to high ionization level ion in work The chemosynthesis reaction on part surface prepares the compound ceramic film of different element ratios, function film, multi-component multi-layer, super brilliant Lattice and film or pure metal film with gradient-structure；By utilizing a kind of combination field and liner special pipe and perforated baffle Film prepared by compound vacuum deposition method eliminates the bulky grain defect in film, reduces compound plasma and exist Loss in filter device and vacuum chamber avoids dirt of the inner lining apparatus surface residues to film caused by different targets are replaced Dye, improves the service efficiency of compound plasma, realizes the quick preparation of film, using pulsed bias optimize it is compound it is equal from The Energy distribution of daughter, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase film Service performance.

Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the period that high-power impulse magnetron sputtering power supply (4) exports pulse is that grid bias power supply (1) exports the whole of pulse Several times, as shown in figure 4, the pulse period of high-power impulse magnetron sputtering power supply (4) output is the pulse of grid bias power supply (1) output 8 times of period, technical arrangement plan carry out film deposition, and preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.

Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the bias arteries and veins of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output It is adjustable to rush waveform phase, as shown in figure 4, different phase differences makes two power supply output pulse waveforms can in same pulse width With whole coincidences, partially overlaps or be not overlapped, thus according to the Proper Match of two power pulses of process choice of film deposition, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, the arteries and veins of high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output pulse Rush that width is independently adjustable, as shown in figure 4, different pulse widths makes the output pulse waveform of two power supplys can be with the former covering The latter, the latter cover the former or are completely coincident, technical arrangement plan, carry out film deposition, and preparation has different stress, micro- The multilayer films of structure and element ratio are seen, other are identical as embodiment one.

Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment two.

Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment three.

Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment four.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multiple-pulse, then with the period be bias plasma Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases The matching of position and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity single hop depth oscillating impulse, then with the period The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integer are exported for grid bias power supply (1) Again, the matching of out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has The multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is unipolarity single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep vibration It swings pulse voltage and can work in high-power impulse magnetron sputtering power supply (4) and start unlatching, advantageously reduce sparking to plasma The adverse effect of body electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition, It can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with It is identical as stage pulse, it also can choose difference, the deep oscillating impulse stage also can take up the entire pulse period, form deep oscillation Pulse voltage mode, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high power pulse The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, into Row film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment party Formula one is identical.

Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multistage depth oscillating impulse, then with the period The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integer are exported for grid bias power supply (1) Again, the matching of out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has The multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is unipolarity multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep vibration It swings pulsed bias and can work in high-power impulse magnetron sputtering power supply (4) and start unlatching, advantageously reduce sparking to plasma The adverse effect of body electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition, It can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of each section of deep oscillation pulse voltage Can be identical as stage pulse, it also can choose difference, same or different deep oscillating impulse can also be used between each other Voltage magnitude, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integer are exported for grid bias power supply (1) Again, the matching of out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has The multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity pulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, and wherein ending phase is whole Voltage magnitude advantageously reduces the accumulation of target surface potential, eliminates spark phenomenon, go on smoothly the electric discharge of next pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field and interior The lining special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle group The bias for setting (14) is attached together, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) open simultaneously, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity multiple-pulse, then with the period be bias plasma Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases The matching of position and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity monopole single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity monopole single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage is also Adjustable is different or phasic Chang amplitudes, deep oscillating impulse can also occurs in the negative pulse stage, can also be with There is deep oscillating impulse in the positive pulse stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse wave with the period The matching of shape and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, Technical arrangement plan carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity monopole multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity monopole multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can With identical as stage pulse, difference also can choose, the amplitude of deep oscillation pulse voltage can also be adjusted to different or rank Section property changes amplitude, deep oscillating impulse can also occurs in the negative pulse stage, deep oscillation arteries and veins can also occurs in the positive pulse stage It rushes, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering arteries and veins with the period The matching of waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 4, technical arrangement plan, it is heavy to carry out film Product prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.

Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity the two poles of the earth single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field and The liner special pipe vacuum deposition method compound with perforated baffle is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe, ladder pipe and perforated baffle The bias of (14) is combined the unit, movable coil installation's power source (10) is opened and adjusts movable coil device (9), standardsizing rheostat device (10) output resistance, by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity the two poles of the earth single hop depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can With identical as stage pulse, difference also can choose, the amplitude of deep oscillation pulse voltage can also be adjusted to different or rank Section property changes amplitude, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and high power pulse with the period The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, into Row film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment party Formula one is identical.

Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with perforated baffle with liner special pipe is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe, ladder pipe and porous gear Plate combines the unit the bias of (14), opens movable coil installation's power source (10) and adjusts movable coil device (9), standardsizing rheostat dress The output resistance for setting (10), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, then with Period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform The matching of integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with perforated baffle with liner special pipe is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe, ladder pipe and porous gear Plate combines the unit the bias of (14), opens movable coil installation's power source (10) and adjusts movable coil device (9), standardsizing rheostat dress The output resistance for setting (10), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein Deep oscillating impulse bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can With identical as stage pulse, difference also can choose, the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, It can choose difference, same or different deep oscillation pulse voltage amplitude, deep oscillating impulse electricity can also be used between each other The amplitude of pressure can also be adjusted to different or phasic Chang amplitude, then export pulse with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with perforated baffle with liner special pipe is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe, ladder pipe and porous gear Plate combines the unit the bias of (14), opens movable coil installation's power source (10) and adjusts movable coil device (9), standardsizing rheostat dress The output resistance for setting (10), by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) it opens simultaneously, it is unipolarity pulse, unipolarity multiple-pulse, monopole that high-power impulse magnetron sputtering power supply (4), which exports pulse, Property single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole list Section deep oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage The two or more combination of the operating mode of deep oscillating impulse, then matching for pulse is exported with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Claims

1. a kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle, which is characterized in that the device Including grid bias power supply (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power Pulsed magnetron sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), Multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe, ladder pipe and perforated baffle combine the unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

2. a kind of combination field according to claim 1 and liner special pipe and the compound vacuum deposition side of perforated baffle Method, which is characterized in that institute's use device further includes that grid bias power supply kymographion (6) show the pulse that grid bias power supply (1) issues Voltage and current waveform, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering power supply (4) impulse waveform exported passes through synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high power arteries and veins Magnetron sputtering power supply (4) are rushed, make grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, no The matching of same-phase and different pulse widths adjusts the output waveform of grid bias power supply (1), to different from a kind of combination field and liner The plated film ion transmitted in the shape pipe vacuum deposition method compound with perforated baffle is effectively attracted, and is filled to multi-stage magnetic field (12), liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) and the middle transmission of movable coil device (9) is set to come out Bulky grain in arc-plasma carries out electric field inhibition, in matrix surface deposition film and control deposition targets element in film In ratio, realize the adjusting of plasma energy and be possible to remaining bulky grain defect and carry out electric field repulsion removing.

3. a kind of combination field according to claim 1 and liner special pipe and the compound vacuum deposition side of perforated baffle Method, which is characterized in that the device uses list set or more sets to combine, and the waveform control of combination synchronous waveform coalignment (8), Movable coil device (9), multi-stage magnetic field device (12) and liner bias conical pipe, ladder pipe and perforated baffle combination unit (14) Multiple types combination, realize the Optimized Matching of different wave, multi-stage magnetic field, liner bias conical pipe, ladder pipe and porous gear Plate combination unit and movable coil magnetic field transmission path guide, the indoor any position of vacuum come prepare pure metal film, Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of different element ratios.

4. a kind of combination field according to claim 1 and liner special pipe and the compound vacuum deposition side of perforated baffle Method, which is characterized in that the pulsed bias of magnetron sputtering combination high voltage is first carried out using high-power impulse magnetron sputtering power supply (4) Power supply carries out ion implantation and deposition, improves the binding force of film and matrix, then is covered using list or covered the device more and combined and adopted With Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc it is one or two kinds of more than Method combination, then apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two kinds or two Kind or more the compound of depositional mode carry out film deposition, to prepare the compound ceramic of pure metal film, different element ratios Film, function film and the film with nanometer multilayer or gradient-structure.

5. a kind of combination field according to claim 1 and liner special pipe and the compound vacuum deposition side of perforated baffle Method, which is characterized in that it is a kind of in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Or a variety of mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and have The film of nanometer multilayer or gradient-structure.