CN109989032A

CN109989032A - A kind of combination field and the compound vacuum deposition method of liner perforated baffle

Info

Publication number: CN109989032A
Application number: CN201711492954.9A
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2017-12-30
Publication date: 2019-07-09

Abstract

A kind of combination field and the compound vacuum deposition method of liner perforated baffle, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: the devices such as grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias perforated baffle device and grid bias power supply, movable coil device and power supply, Waveform Matching device, high-power impulse magnetron sputtering target source and power supply；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10^‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.

Description

A kind of combination field and the compound vacuum deposition method of liner perforated baffle

Technical field

The present invention relates to a kind of combination fields and the compound vacuum deposition method of liner perforated baffle, belong at material surface Manage technical field.

Background technique

During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 10¹⁰A/m², cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.

Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm², the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm², the density of plasma reaches 10¹⁸m^-3The order of magnitude, central region ion concentration Up to 10¹⁹m^-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.

Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.

It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.

Summary of the invention

The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from Daughter, what constraint and biasing electric field in conjunction with multi-stage magnetic field filter method and liner bias perforated baffle device own form attracted Compound action eliminates the bulky grain defect contained in arc-plasma, while guaranteeing the arc-plasma with higher transmission Efficiency by liner bias perforated baffle device and multi-stage magnetic field filter device, recycle movable coil device magnetically confined and The compound action that itself biasing electric field attracts is transmitted out to eliminate from multi-stage magnetic field device and liner bias perforated baffle device Arc-plasma in the bulky grain defect that contains, while using movable coil device control high-power impulse magnetron sputtering and The transmission direction of the compound plasma of arc ion plating in a vacuum chamber is realized to substrate work-piece table in any position in vacuum chamber The control and regulation of the film deposition and thin film composition in face, reduce compound plasma in the indoor loss of vacuum, overcome due to true Film caused by empty room and target source position limitation or base shape limit deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field It is possible to remaining bulky grain defect out in the arc-plasma for transmitting in device and liner bias perforated baffle device, makes Workpiece surface adjusts ion energy in the case where applying back bias voltage, removes electricity using the biasing electric field inhibiting effect of matrix surface Bulky grain defect in arc plasma, the high-quality thin-film that preparation is continuous, fine and close, while realizing to target elements content in film Addition control, reduce using alloys target production cost, improve plasma efficiency of transmission, increase film deposition velocity and Bulky grain defect is decreased or even eliminated to the adverse effect of film microstructure, continuous compact deposits and service performance, is proposed A kind of combination field and the compound vacuum deposition method of liner perforated baffle.

Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), the porous gear of liner bias Panel assembly (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16), Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction Fixed, liner bias perforated baffle device (14) connects the cathode output end of liner grid bias power supply (15), opens power supply total control switch With external water-cooling circulating system；

Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10^-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；

It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；

It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；

It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity；

Liner bias perforated baffle device (14) can cooperate multi-stage magnetic field device (12) design diameter of baffle, hole type, The spacing of size and baffle is attached between baffle by the screw bolt and nut of magnetism-free stainless steel and is fixed with position, convenient for tearing open De-assembly and cleaning pollutant, activity insulation assembly between liner bias perforated baffle device (14) and multi-stage magnetic field device (12) Together, liner bias perforated baffle device (14) can dismantle in time cleaning and installation with apparent surface pollution level, avoid nothing The inside pipe wall of multi-stage magnetic field device (12) pollutes and is difficult to the problem of clearing up, liner bias perforated baffle device under liner plate state (14) length of magnetic field at different levels of perforated baffle spacing and multi-stage magnetic field device (12) match, liner bias perforated baffle device (14) outer diameter of perforated baffle is slightly less than the internal diameter of multi-stage magnetic field device (12)；Liner bias perforated baffle device (14) porous gear Pore size, type in plate are selected according to different targets and technological parameter, pass through liner bias perforated baffle device (14) the structure combination of the baffle diameter in perforated baffle, pore size, Change of types and baffle at different levels, may be implemented to big The mechanical stop shielding of grain；

The material of multi-stage magnetic field device (12) and liner bias perforated baffle device (14) does not select the 304 of nonmagnetic, resistance to cleaning not Become rusty Steel material, multi-stage magnetic field device (12) determined according to the diameter of target, cooling, transmission range length, internal-and external diameter, thickness, Magnetic field the number of turns and direction, liner bias perforated baffle device (14) determine outer diameter according to multi-stage magnetic field device (12) internal diameter, and according to According to the topology layout for needing to select suitable thickness, the size in aperture, type and baffle at different levels, processed according to actual design parameter ?；

It opens liner grid bias power supply (15), liner bias perforated baffle device (14) keeps direct current, pulse, multiple-pulse, direct current Pulse is compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type Rate, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias perforated baffle device (14) carry out bulky grain Attract, depositing ions are repelled, reduce loss of the arc-plasma in pipe in transmission process, reduction even is eliminated electricity Bulky grain defect in arc plasma improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias The voltage parameter of power supply (15) is -200 ~+200V, is that direct current, pulse, multiple-pulse, DC pulse be compound or bipolarity arteries and veins Power supply is rushed, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, bulky grain is lacked during the deposition process It falls into and generates periodical or continual and steady attraction, it is more by multi-stage magnetic field device (12) and liner bias to greatly reduce bulky grain The probability of hole retaining device (14)；

It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；

Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias perforated baffle device (14) transmission, utilizes movable coil device The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein Be determined with straight line portion according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with Higher efficiency of transmission reaches matrix surface, and deposition position caused by designing due to vacuum chamber space and target source layout is overcome to limit Or base shape limits caused film and deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) Elimination is filtered to the bulky grain defect in arc-plasma, guarantees the uniformity of target ablation, improves the utilization of target Efficiency overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, make compound plasma with compared with High efficiency of transmission realizes the adjusting to magnetic direction and magnetic field strength, pilot arc etc. by movable coil device (9) Gas ions and high-power impulse magnetron sputtering plasma reach any position in vacuum chamber (13) or sample stage (12) is taken up an official post The matrix surface for shape of anticipating, the adjustings such as coil turn, coil-span, shape and transmission path of movable coil device (9) are controlled Compound plasma processed reduces loss of the compound plasma in vacuum chamber (13), removes big in arc-plasma Grain defect, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized on movable coil device (9) Positive bias variation, the attraction to electronics in arc-plasma and remaining bulky grain may be implemented in the electric field that positive bias generates, And then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc-plasma and exist Efficiency of transmission in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device (9) selection is low-resistance Copper tube, the diameter of copper pipe, thickness and length according to the number of turns of movable coil device (9), coil channel diameter, coil shape, Coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil installation's power source (10) positive and negative anodes provide suitable electric current to movable coil device (9) according to magnetic field strength, direction and cooling system, electric current Input range is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic field, makes The path transmission that compound plasma is set according to movable coil device (9), while guaranteeing to remove remaining bulky grain with High efficiency of transmission reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the quick heavy of film Product；

Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.

According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.

Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b. Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, the further removing to remaining bulky grain defect from multi-stage magnetic field device and liner bias perforated baffle device, High-power impulse magnetron sputtering technology discharge instability and ion resorption problem are overcome, reduces compound plasma in vacuum Loss in the transmission process of room, by the guidance in movable coil magnetic field, further increase compound plasma efficiency of transmission and The deposition velocity of film overcomes deposition position limitation or base shape caused by designing due to vacuum chamber space and target source layout Film caused by limiting deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also pass through Rheostat device adjusts the series impedance of movable coil, realizes the adjustment to movable coil itself positive bias parameter, realization pair The attraction of electronics and remaining bulky grain in arc-plasma, transmission effect of the Lai Tisheng arc-plasma in movable coil Rate eliminates remaining bulky grain defect, increases the deposition velocity of film；H. multi-stage magnetic field filter device can pass through the pact in magnetic field Beam guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and the magnetic line of force for passing through multi-stage magnetic field Make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also changes the movement of arc-plasma and bulky grain defect Path is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；I. liner bias Perforated baffle device, which passes through, can apply direct current, pulse or the compound positive bias of DC pulse, continue to bulky grain or week Effective attraction of phase property continue to depositing ions or periodically repel, can also pass through the bipolarity arteries and veins of positive back bias voltage Punching oscillation, reduces loss of the plasma in pipe in transmission process, further increase arc-plasma efficiency of transmission and The deposition velocity of film；J. liner bias porous type retaining device can utilize the type of baffle holes, hole by own form Diameter, pitch of holes realize the mechanical stop screen effect to bulky grain defect, limit the direction of motion of bulky grain defect to eliminate electricity Bulky grain defect in arc plasma, the flexible disassembly of liner bias perforated baffle device, cleaning is convenient, it is possible to prevente effectively from After target replacement, the pollution of thin film composition is caused to the secondary sputtering of liner apparatus surface pollutant；K. pulsed bias power supply is logical Toning whole pulse type, pulse amplitude, pulse width and pulse frequency are realized using the inhibition repelling effect of electric field to remaining Bulky grain defect eliminate and optimizes to the adjusting of compound plasma energy；L. the microstructure and properties of prepared film Can be adjusted by pulsed bias parameter, using the type of pulsed bias, amplitude, pulse width and frequency realize high energy from The pinning effect that son grows film improves the texture and stress state of film growth, improves bond strength, improves film Service performance；M. pass through using thin prepared by a kind of combination field vacuum deposition method compound with liner perforated baffle Film eliminates the bulky grain defect in film, reduces loss of the compound plasma in filter device and vacuum chamber, improves The service efficiency of compound plasma, realizes the quick preparation of film, and can guarantee film crystal tissue and microstructure It is finer and close, be conducive to the service performance for further increasing film.

A kind of combination field and the compound vacuum deposition method of liner perforated baffle, which can singly cover or more set groups It closes, and combines the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias perforated baffle device (14) it is combined with the multiple types of movable coil device (9), realizes the Optimized Matching, multi-stage magnetic field and movable coil of different wave The transmission path in magnetic field guides, and the compound of pure metal film, different element ratios is prepared in the indoor any position of vacuum Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure can also cover using single set or mostly the device simultaneously In conjunction with one or two kinds of using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc Above method combination, then Dc bias, pulsed bias or the compound bias of DC pulse are used, it is two or more heavy to realize The compound of product mode carries out film deposition, and it is thin to prepare pure metal film, the compound ceramic film of different element ratios, function Film and high-quality thin-film with nanometer multilayer or gradient-structure.

Detailed description of the invention

Fig. 1 is a kind of scheme of erection of combination field and the compound vacuum deposition method of liner perforated baffle of the present invention；Fig. 2 It is 6 kinds of topology layouts of movable coil device；Fig. 3 is liner bias perforated baffle apparatus structure schematic diagram and 4 kinds of exemplary porous gears Plate schematic diagram；Fig. 4 is synchronous waveform coalignment, high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform From the matching figure of high-power impulse magnetron sputtering unipolarity single pulse waveforms integral multiple, out of phase and different pulse widths.

Specific embodiment

Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-4, a kind of combination field of present embodiment with it is interior Serving as a contrast the compound vacuum deposition method institute use device of perforated baffle includes grid bias power supply (1), arc power (2), arc ion plating target Source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), It is movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), interior Serve as a contrast bias perforated baffle device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias perforated baffle device (14) transmission, utilizes movable coil device The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein Be determined with straight line portion according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with Higher efficiency of transmission reaches matrix surface, and deposition position caused by designing due to vacuum chamber space and target source layout is overcome to limit Or base shape limits caused film and deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) Elimination is filtered to the bulky grain defect in arc-plasma with liner bias perforated baffle device (14), guarantees that target is burnt The uniformity of erosion improves the utilization efficiency of target, overcomes high-power impulse magnetron sputtering technology discharge instability and ion returns Suction problem makes compound plasma with higher efficiency of transmission by movable coil device (9), at the same realize to magnetic direction and The adjusting of magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering plasma reach in vacuum chamber (13) The matrix surface of arbitrary shape on any position or sample stage (12), the coil turn of movable coil device (9), coil-span, The adjustings such as shape and transmission path control compound plasma, reduce loss of the compound plasma in vacuum chamber (13), The bulky grain defect in arc-plasma is removed, the fast deposition of film is carried out；The output electricity of standardsizing rheostat device (11) Resistance, realizes the positive bias variation on movable coil device (9), and the electric field that positive bias generates may be implemented in arc-plasma The attraction of electronics and remaining bulky grain, and then increase the ion populations of the arc-plasma exported in movable coil device (9) Increase, promotes efficiency of transmission of the arc-plasma in movable coil device (9), eliminate remaining bulky grain defect；Activity Coil device (9) selects low-resistance copper tube, diameter, thickness and the length of copper pipe according to movable coil device (9) the number of turns, Coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range To determine；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction and cooling system to movable coil device (9) suitable electric current is provided, the input range of electric current is 0 ~ 2000A, guarantees the stability and movable coil of entire vacuum system Device (9) exports suitable magnetic field, the path transmission for setting compound plasma according to movable coil device (9), guarantee pair Matrix surface is reached with high efficiency of transmission while remaining bulky grain is removed, avoids compound plasma in vacuum chamber (13) The fast deposition of film is realized in middle loss；

The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.

Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.

Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.

It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.

A kind of combination field and the compound vacuum deposition method of liner perforated baffle, make full use of high power pulse magnetic control to splash It hits sputtering target source while carrying out the generation and ionization of ion, break through the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point The application limit of material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating System, effectively avoids bulky grain problem caused by low melting material；Institute on synchronous waveform coalignment control workpiece is utilized simultaneously Apply back bias voltage and high-power impulse magnetron sputtering technological parameter, is conducive to improve high-power impulse magnetron sputtering target source plasma The Potential Distributing in body section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate effectively solve Gao Gong to workpiece motion s The problem that rate pulsed magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ion plating (aip) is utilized simultaneously It generates and stablizes metallic plasma lasting, that ionization level is high, make up lacking for high-power impulse magnetron sputtering technology discharge instability It falls into, is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, the compound ceramic for preparing different element ratios is thin Film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.Utilize movable coil device Shape and magnetic field magnetic line layout, direction cooperation, movable coil can also use using 90 degree of classical flexure types Straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line with Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and the tangent group of straight line, circular arc and straight line Close) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), circle therein Arc and straight line portion are determined according to the needs of spatial position and transmission path, are realized to arc-plasma and high power arteries and veins The effective control for rushing magnetron sputtering Plasma Transport path, to from multi-stage magnetic field device and liner bias perforated baffle device Remaining bulky grain defect is purged in the arc-plasma that transmission comes out, and is overcome high-power impulse magnetron sputtering technology and is put Electricity is unstable and ion resorption problem, loss of the reduction compound plasma in vacuum chamber transmission process pass through movable coil The guidance in magnetic field further increases the efficiency of transmission of compound plasma and the deposition velocity of film, overcomes due to vacuum chamber sky Between and target source layout design caused by deposition position limitation or base shape limit caused by film deposit problem of non-uniform, can To realize the preparation of film in the optimum position of vacuum chamber, the series electrical of movable coil can also be adjusted by rheostat device Resistance value realizes the adjustment to movable coil itself positive bias parameter, realizes to the electronics and big of remnants in arc-plasma The attraction of grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining bulky grain defect, increase thin The deposition velocity of film；Using multi-stage magnetic field filter device by magnetically confined guarantee electric arc in the stable motion of target material surface, Lasting arc-plasma is generated, and makes arc-plasma in multi-stage magnetic field device by the magnetic line of force of multi-stage magnetic field High efficiency of transmission changes the motion path of arc-plasma and bulky grain defect also to realize the separation of the two, is further reduced The bulky grain defect even being eliminated in arc-plasma；Apply direct current, pulse or straight using liner bias perforated baffle device The compound positive bias of pulse is flowed, bulky grain continue or is periodically effectively attracted, effectively low melting material is avoided to be produced Raw bulky grain problem continue to depositing ions or periodically repel, can also pass through the bipolarity arteries and veins of positive back bias voltage Punching oscillation, reduces loss of the plasma in pipe in transmission process, further increase arc-plasma efficiency of transmission and The deposition velocity of film, liner bias perforated baffle device can by own form, using the type of perforated baffle, aperture, The mechanical stop screen effect to bulky grain defect is realized in structure combination between pitch of holes and baffle at different levels, limits bulky grain defect Motion path eliminate the bulky grain defect in arc-plasma, reduce bulky grain and pass through liner bias perforated baffle device Reach the probability on deposited samples surface；Liner bias perforated baffle device may be implemented quickly by non-magnetic rivet interlacement The problem of disassembly installation, cleaning is convenient, avoids the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, can be with After effectively avoiding target from replacing, the pollution of thin film composition is caused to the secondary sputtering of liner apparatus surface pollutant；Pulsed bias Power supply utilizes the inhibition repelling effect realization pair of electric field by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency Remaining bulky grain defect eliminate and optimizes to the adjusting of compound plasma energy, improves plasma near matrix Section Potential Distributing sufficiently attracts compound plasma to workpiece motion s, realizes the fast deposition of film；Prepared film it is micro- Seeing structure and performance can be adjusted by pulsed bias parameter, utilize the type of pulsed bias, amplitude, pulse width and frequency Rate realizes the pinning effect that energetic ion grows film, improves the texture and stress state of film growth, improves and combines Intensity improves the service performance of film；Also stablize metal lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously Plasma is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound of different element ratios Ceramic membrane, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；By utilizing one Film prepared by kind combination field and the compound vacuum deposition method of liner perforated baffle, the bulky grain eliminated in film lack It falls into, reduces loss of the compound plasma in filter device and vacuum chamber, avoid liner caused by different targets are replaced Pollution of the apparatus surface residue to film, improves the service efficiency of compound plasma, realizes the quick preparation of film, benefit The Energy distribution of compound plasma is optimized with pulsed bias, and can guarantee that film crystal tissue and microstructure more cause It is close, be conducive to the service performance for further increasing film.

Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering Power supply (4) exports the integral multiple for the period of pulse pulse being exported for grid bias power supply (1), as shown in figure 4, high power pulse magnetic control splashes The pulse period of radio source (4) output is 8 times of the pulse period of grid bias power supply (1) output, and technical arrangement plan carries out film Deposition prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment Together.

Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering The bias pulse waveform phase of power supply (4) output high-power pulse and grid bias power supply (1) output is adjustable, as shown in figure 4, in Tong Mai When rushing width, different phase differences allows two power supply output pulse waveforms to be all overlapped, partially overlap or be not overlapped, thus According to the Proper Match of two power pulses of process choice of film deposition, technical arrangement plan carries out film deposition, preparation tool There are the multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering The pulse width of power supply (4) output high-power pulse and grid bias power supply (1) output pulse is independently adjustable, as shown in figure 4, different Pulse width makes that the output pulse waveform of two power supplys can cover the latter with the former, the latter covers the former or is completely coincident, work The adjustment of skill parameter, carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin Film, other are identical as embodiment one.

Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment two.

Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment three.

Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, first can use high-power impulse magnetron sputtering power supply (4) in step 2 The pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the combination of film and matrix Then power carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microstructure and element The multilayer films of ratio, other are identical as embodiment four.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is unipolarity multiple-pulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period The matching for rushing waveform from high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Fig. 4 institute Show, technical arrangement plan, carry out film deposition, prepares the multilayer knot with different stress, microstructure and element ratio Structure film, other are identical as embodiment one.

Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is unipolarity single hop depth oscillating impulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, partially Of voltage source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is unipolarity single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillation pulse voltage can be in high power pulse magnetic It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to One stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, The deep oscillating impulse stage also can take up the entire pulse period, form deep oscillation pulse voltage mode, then with the period be bias plasma Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases The matching of position and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is unipolarity multistage depth oscillating impulse that radio source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is unipolarity multistage depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse magnetic It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to One stage discharge is gone on smoothly, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose Difference can also use same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage between each other It can also be adjusted to different or phasic Chang amplitude, then be the cooperation of grid bias power supply (1) output pulse with the period, partially Of voltage source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity pulse that radio source (4), which exports pulse, wherein the whole voltage magnitude of ending phase, and it is tired to advantageously reduce target surface potential Product eliminates spark phenomenon, goes on smoothly the electric discharge of next pulse, then exports matching for pulse with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The compound vacuum deposition method connection of perforated baffle is served as a contrast, is opened arc power (2), multi-stage magnetic field power supply (5) is opened and adjusts multistage magnetic Field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens active line Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering It is bipolarity multiple-pulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period The matching for rushing waveform from high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Fig. 4 institute Show, technical arrangement plan, carry out film deposition, prepares the multilayer knot with different stress, microstructure and element ratio Structure film, other are identical as embodiment one.

Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity monopole single hop depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity monopole single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase In going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also be adjusted to different or interim change The amplitude of change deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then It is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse wave with the period The matching of shape integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, system The standby multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity monopole multistage depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity monopole multistage depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase Can be identical as stage pulse in the amplitude of going on smoothly for next stage discharge, deep oscillation pulse voltage, also it can choose Difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, can also be in negative pulse There is deep oscillating impulse in stage, can also be grid bias power supply (1) output in the deep oscillating impulse of positive pulse stage appearance, then with the period The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and difference The matching of pulse width carries out film deposition as shown in figure 4, technical arrangement plan, and preparation has different stress, microcosmic The multilayer films of structure and element ratio, other are identical as embodiment one.

Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity the two poles of the earth single hop depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1) It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member The multilayer films of plain ratio, other are identical as embodiment one.

Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field with The compound vacuum deposition method connection of liner perforated baffle, opens arc power (2), opens multi-stage magnetic field power supply (5) and adjust multistage Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), unlatching activity Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes It is bipolarity the two poles of the earth single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase Can be identical as stage pulse in the amplitude of going on smoothly for next stage discharge, deep oscillation pulse voltage, also it can choose Difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner perforated baffle is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens and lives Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control It is bipolarity the two poles of the earth multistage depth oscillating impulse that shielding power supply (4), which exports pulse, then exports pulse with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner perforated baffle is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens and lives Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control It is bipolarity the two poles of the earth multistage depth oscillating impulse that shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias can be in high power Pulsed magnetron sputtering power supply (4) work starting is opened, and the adverse effect of sparking plasma electric discharge is advantageously reduced, can also be with It is opened in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, have Conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be identical as stage pulse, can also select Difference is selected, the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, between each other may be used To use same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage can also be adjusted to different Or phasic Chang amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and Gao Gong The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technological parameter Adjustment carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other It is identical as embodiment one.

Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner perforated baffle is connect, and is opened arc power (2), and it is more to open multi-stage magnetic field power supply (5) adjusting Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias perforated baffle device (14), opens and lives Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control It is more for unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity that shielding power supply (4) exports pulse The deep oscillating impulse of section, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole are more The deep oscillating impulse of section, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode two Kind or two or more combinations, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and Gao Gong The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technological parameter Adjustment carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other It is identical as embodiment one.

Claims

1. a kind of combination field and the compound vacuum deposition method of liner perforated baffle, which is characterized in that the device includes bias Power supply (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control Sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), waveform are same Walk coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field dress Set (12), multi-stage magnetic field installation's power source (13), liner bias perforated baffle device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

2. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner perforated baffle, feature It is, institute's use device further includes the pulse voltage and electric current that grid bias power supply kymographion (6) show that grid bias power supply (1) issues Waveform, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the arteries and veins of high-power impulse magnetron sputtering power supply (4) output Waveform is rushed, synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high-power impulse magnetron sputtering electricity are passed through Source (4) makes grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, out of phase and difference The matching of pulse width adjusts the output waveform of grid bias power supply (1), to compound from a kind of combination field and liner perforated baffle The plated film ion transmitted in vacuum deposition method is effectively attracted, porous to multi-stage magnetic field device (12), liner bias Transmission comes out the bulky grain in arc-plasma and carries out electric field inhibition in retaining device (14) and movable coil device (9), The ratio of matrix surface deposition film and control deposition targets element in the film, realizes the adjusting of plasma energy and has It may remaining bulky grain defect progress electric field repulsion removing.

3. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner perforated baffle, feature It is, which combines the waveform control of synchronous waveform coalignment (8), movable coil using single set or more set combinations The multiple types of device (9), multi-stage magnetic field device (12) and liner bias perforated baffle device (14) combine, and realize different wave Optimized Matching, multi-stage magnetic field, liner bias perforated baffle device and the transmission path in movable coil magnetic field guidance, in vacuum chamber Interior any position prepares pure metal film, the compound ceramic film of different element ratio, function film and has nanometer The film of multilayer or gradient-structure.

4. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner perforated baffle, feature It is, is first carried out using the pulsed bias power supply that high-power impulse magnetron sputtering power supply (4) carry out magnetron sputtering combination high voltage Ion implantation and deposition improves the binding force of film and matrix, then using single set or covers the device more and combine straight using tradition One or two kinds of above method combination of magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc is flowed, Apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece again, it is two or more heavy to realize The compound of product mode carries out film deposition, to prepare pure metal film, the compound ceramic film of different element ratios, function Film and film with nanometer multilayer or gradient-structure.

5. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner perforated baffle, feature It is, working gas selects argon gas or working gas to select one or more in nitrogen, acetylene, methane, silane or oxygen mix Close gas, come prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer multilayer or The film of gradient-structure.