CN106637096A - Lining positive bias porous baffle multi-level magnetic field arc ion plating method - Google Patents
Lining positive bias porous baffle multi-level magnetic field arc ion plating method Download PDFInfo
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- 238000007733 ion plating Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 49
- 150000002500 ions Chemical class 0.000 claims abstract description 33
- 230000007547 defect Effects 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000001914 filtration Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 57
- 239000010408 film Substances 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 22
- 238000009713 electroplating Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000000427 thin-film deposition Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000010891 electric arc Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims description 5
- 238000003379 elimination reaction Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010963 304 stainless steel Substances 0.000 claims description 3
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 abstract description 30
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000721047 Danaus plexippus Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010921 in-depth analysis Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229940074869 marquis Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a lining positive bias porous baffle multi-level magnetic field arc ion plating method, belongs to the technical field of material surface treatment and aims at achieving the aim about removal of macroparticles and deposition ions polluting the pipe inner wall in a multi-level magnetic field filtering device and solving the problem about losses of arc plasmas in the transmitting process. The method comprises the steps that firstly, a workpiece to be coated is placed on a sample table in a vacuum chamber, a related power source is turned on, and an outer water cooling system is started; secondly, film deposition is conducted, when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of working gas is conducted, the air pressure is adjusted, a coating power source is started, and meanwhile a bias power source is utilized for attracting arc plasmas at the position of an outlet and conducting energy adjustment; and through stopping and shielding of a lining positive bias porous baffle device, the inhibiting effect of a positive bias electric field and the filtering effect of a multi-level magnetic field, the macroparticle defect is effectively overcome, the transmission efficiency of the arc plasmas is guaranteed, needed technology parameters are set, and film preparing is conducted.
Description
Technical field
The present invention relates to the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate, belongs at material surface
Reason technical field.
Background technology
During arc ion plating prepares thin film, because arc speckle electric current density is up to 2.5 ~ 5 × 1010A/m2, cause
Occurs the liquid metal of melting at the arc speckle position of target material surface, in the presence of local plasma pressure in droplets
Splash out, is attached to film surface or inlays formation " bulky grain " in the film（Macroparticles）Defect（Boxman
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.）.
In arc-plasma, because the movement velocity of electronics was far longer than in the movement velocity of ion, unit interval big is reached
The electron number on grain surface is more than number of ions, makes bulky grain that elecrtonegativity is presented.It is the thin of micron or submicron relative to thickness rank
Film, size 0.1-10 microns bulky grain defect just as pollutions of the PM2.5 to air quality, the quality and property to thin film
There can be serious harm.It is increasingly extensive with thin-film material and thin film technique application, the solution of bulky grain defect problem with
It is no to become the bottleneck that arc ions electroplating method further develops, seriously constrain its answering in thin-film material of new generation preparation
With.
At present, it is also easy to produce greatly in the simple metal using low melting point or multicomponent alloy material to solve arc ions electroplating method
Grain defect problem, main at present to adopt the method for Magnetic filter to filter out bulky grain, such as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device（Publication number：CN1150180, publication date：On May 21st, 1997）In adopt 90 °
Magnetic filter is filtered to the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and He'nan University Zhang Yujuan etc. (Zhang Yujuan, Wu Zhiguo, Zhang Weiwei etc. filtered cathode arc plasma prepares TiAlN thin film
Impact of the middle sedimentary condition to film texture. China YouSe Acta Metallurgica Sinica. 2004,14 (8):1264-1268.) in article
Middle " S " magnetic filter that made is filtered to the bulky grain of cathode arc, also American scholar Anders et al.（Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
arc plasmas [J]. Surf Coat Tech, 2000, 133-134: 96-100.）The Twist filter's of proposition
Magnetic filter, although the efficiency of transmission that these methods have certain effect, plasma in terms of filtering and eliminating bulky grain is damaged
Lose seriously, substantially reduce ion current density.Can guarantee that on the basis of efficiency that Chinese patent is true again based on bulky grain can be filtered
Empty cathode arc straight filter (publication number：CN1632905, publication date：On June 29th, 2005) the middle side for proposing straight tube filtration
Method, but which in turn reduces filter effect.In a word, related research worker is by the various Magnetic filter methods of contrast（Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007, 35(4): 992-999.）It was found that arc ion plating plasma is kept after magnetic filter
High efficiency of transmission and elimination bulky grain is very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.
In addition using the electric field suppressing method of bias on matrix, when back bias voltage is applied on matrix, electric field will be to electronegative big
Grain produces repulsive interaction, and then reduces the generation of film surface bulky grain defect.German scholar Olbrich et al.（Olbrich
W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991, 49(1-3):258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
using a pulsed bias voltage [J]. Mat Sci Eng A, 1991, 140: 830-837.）Using pulse
Bias to replace traditional Dc bias, define a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology, not only greatly reduces the oarse-grained number of film surface, also overcomes the substrate temperature mistake that Traditional DC bias causes
It is high, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al.（Woods Guoqiang. pulsed bias arc ion plating
Process ba- sis study [D]. and Dalian University of Technology, 2008. and Huang Meidong, woods Guoqiang, Dong Chuan, Sun Chao, hear immediately. partially
Influencing Mechanism [J] of the pressure to arc ion plating film surface appearance. Acta Metallurgica Sinica, 2003,39 (5): 510-515.）Pin
The mechanism that bulky grain defect is reduced is caused to conduct in-depth analysis to pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, reduce film surface big
Grain defect counts, improve the quality of thin film, are widely used in actual production, but bulky grain can not be still completely eliminated and lack
Fall into.Domestic scholars（Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, literary Zhenhua, Chen Liangji. multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number：CN103276362A, publication date：On September 4th, 2013）Propose many
The arc ions electroplating method that level magnetic field straight tube Magnetic filter is combined with pulsed bias, big is eliminated by multi-stage magnetic field defecator
Grain defect simultaneously lifts the efficiency of transmission of plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later stage correlation scholar（Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
Symbol pallid light. the multi-stage magnetic field arc ions electroplating method of liner positive bias straight tube, publication number：CN105925940A, publication date：
On September 7th, 2016）Propose the multi-stage magnetic field arc ions electroplating method of liner positive bias straight tube to solve the pollution to inside pipe wall
Problem.The method that also scholar proposes dual-layered baffle plate（Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong
J, Sun C. Synthesis of titanium nitride thin films deposited by a new
shielded arc ion plating [J]. Appl Surf Sci, 2011, 257(13): 5694-5697.）, research
Affecting laws of the baffle spacing to film surface appearance, bulky grain elimination effect and sedimentation rate.Also scholar（Zhang Tao, marquis
Monarch reaches, Liu Zhiguo, Zhang Yicong. the cathodic arc plasma source of Magnetic filter and its film preparation [J]. Chinese Surface Engineering,
2002, 02): 11-15+20-12.）The method for using for reference Bilek plates（Bilek M M M, Yin Y, McKenzie D R,
Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc
(FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966 vol.2）, positive bias is applied on the bend pipe of 90 degree of bend pipe magnetic filters to improve the transmission effect of plasma
Rate.
The content of the invention
The invention aims to solve simple metal or multicomponent alloy of the conventional arc ion electroplating method using low melting point
Material and nonmetallic materials（Such as graphite）Bulky grain defect, flexure type Magnetic filter technology are also easy to produce as target cause electric arc etc.
The low problem of gas ions efficiency of transmission, shields with reference to the mechanical stop of multi-stage magnetic field filter method and porous type baffle plate self structure
And the compound action that positively biased piezoelectric field attracts, while ensureing that arc-plasma passes through porous type baffle plate with higher efficiency of transmission
With multi-stage magnetic field defecator, allow surface of the work the situation for applying back bias voltage it is continuous, fine and close prepare high-quality thin-film, together
Shi Shixian in thin film constituent content addition control, reduce using alloys target production cost, improve thin film deposition efficiency, subtract
Few bulky grain defect is to thin film growth and the adverse effect of performance, it is proposed that the multi-stage magnetic field electricity of liner positive bias porous type baffle plate
Arc ion electroplating method.
The inventive method institute use device includes grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field dress
Put 4, multi-stage magnetic field power supply 5, liner positive bias porous type retaining device 6, positively biased voltage source 7, sample stage 8, grid bias power supply waveform
Oscillograph 9 and vacuum chamber 10；
The method is comprised the following steps：
On step one, the sample stage 8 that pending substrate work-piece is placed in vacuum chamber 10, liner positive bias porous type retaining device
Insulation between 6 and vacuum chamber 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, electric arc
Ion plating target source 3 is arranged on vacuum chamber 10, connects the cathode output end of arc power 2, and the magnetic fields at different levels of multi-stage magnetic field device 4 connect many
Each outfan of level magnetic field power supply 5, both positive and negative polarity connection can be determined according to output magnetic direction, liner positive bias porous
Type retaining device 6 connects the cathode output end of positively biased voltage source 7, opens outside water-cooling circulating system；
Step 2, thin film deposition：By the evacuation of vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work is passed through
Make gas to 0.01Pa～10Pa, open grid bias power supply 1 and grid bias power supply kymographion 9, and adjust the output of grid bias power supply 1
Bias amplitude, pulse frequency and pulse width, the peak voltage of the output pulse of grid bias power supply 1 is 0～1.2kV, pulse frequency
For 0Hz～80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, adjust what is needed
Technological parameter, the current value of the output of arc power 2 is 10 ~ 300A, and by multi-stage magnetic field power supply 5 multi-stage magnetic field device 4 is adjusted, and is kept
Arc-plasma is stably produced in arc ion plating target source 3 and carries out filtration elimination to bulky grain defect, makes arc plasma
Body reaches matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film, arc ion plating
Target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, direct current positive bias is kept to liner positive bias porous type retaining device 6, adjust output voltage, made
Liner positive bias porous type retaining device 6 attracts bulky grain, and depositing ions are repelled, and reduces plasma in pipe
Loss in interior transmitting procedure, improves the efficiency of transmission of plasma and the deposition velocity of thin film；Liner positive bias porous type keeps off
Panel assembly 6 can coordinate the spacing of the type, size and baffle plate in hole on the design baffle plate of multi-stage magnetic field device 4, baffle plate to pass through bolt
Connect and carry out position using nut and fix, be easy to disassemble assembling and cleaning pollutant；Liner positive bias porous type retaining device 6
The activity insulation between multi-stage magnetic field device 4 is assembled together, and liner positive bias porous type retaining device 6 can be polluted with apparent surface
Degree is dismantled in time cleaning and is installed, it is to avoid the inside pipe wall pollution of multi-stage magnetic field device 4 and be difficult to clear up under linerless board status
Problem, the perforated baffle spacing of liner positive bias porous type retaining device 6 and the length of magnetic field phases at different levels of multi-stage magnetic field device 4
Coordinate, the external diameter of the perforated baffle of liner positive bias porous type retaining device 6 is slightly less than the internal diameter of multi-stage magnetic field device 4；Liner is just
Pore size, type in the perforated baffle of bias porous type retaining device 6 is selected according to different targets and technological parameter, is led to
The structural grouping of the pore size, Change of types and baffle plate at different levels crossed in the perforated baffle of liner positive bias porous type retaining device 6,
Can realize shielding oarse-grained mechanical stop；The material of liner positive bias porous type retaining device 6 may be selected nonmagnetic, resistance to
304 stainless steel materials of cleaning, can as needed select the structure of suitable thickness, the size in aperture, type and baffle plate at different levels
Layout, processes according to actual design parameter；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is DC voltage,
Continual and steady attraction can be produced to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device 4 in deposition process
Reach the probability of film surface.
According to the needs of film preparation, adjusting related technological parameter carries out simple metal thin film, the change of different element ratios
It is prepared by compound ceramic membrane, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Advantages of the present invention：A. liner positive bias porous type retaining device can be entered by applying positive bias to bulky grain
Row effectively attracts, and depositing ions are repelled, and reduces loss of the plasma in transmitting procedure in pipe, further improves electricity
The efficiency of transmission of arc plasma and the deposition velocity of thin film；B. multi-stage magnetic field defecator can ensure electricity by the magnetic line of force
The high efficiency of transmission of arc plasma, change bulky grain defect motion path to eliminate arc-plasma in bulky grain lack
Fall into；C. liner positive bias porous type retaining device can realize mechanical stop screen effect by self structure, limit bulky grain
The motion path of defect to eliminate arc-plasma in bulky grain defect；D. it is adjusted by pulsed bias parameter, is wrapped
Include amplitude, pulse width and frequency and realize that the regulation to arc-plasma energy and the bulky grain defect to remaining disappear
Remove；E. the microstructure and properties of prepared thin film can be adjusted by pulsed bias parameter, using the width of pulsed bias
Value, pulse width and frequency realize the pinning effect that energetic ion grows to thin film, improve the texture of thin film growth and answer
Power state, improves bond strength；F. prepared thin film avoids bulky grain defect, and film crystal tissue is finer and close, can be with
Further improve the mechanical property of thin film.
Step 3, can be with reference to using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulse
Cathode arc carries out thin film deposition to prepare simple metal thin film, difference with the compound bias of Dc bias, pulsed bias or DC pulse
The compound ceramic thin film of element ratio, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Description of the drawings
Fig. 1 is the scheme of erection of the liner positive bias porous type retaining device of multi-stage magnetic field arc ion plating of the present invention；Fig. 2
It is the structure and 4 kinds of exemplary porous baffle plate sketches of liner positive bias porous type retaining device.
Specific embodiment
Specific embodiment one：Present embodiment, present embodiment liner positive bias porous are illustrated with reference to Fig. 1 and 2
The multi-stage magnetic field arc ions electroplating method institute use device of type baffle plate includes grid bias power supply 1, arc power 2, arc ion plating target source
3rd, multi-stage magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias porous type retaining device 6, positively biased voltage source 7, sample stage 8,
Grid bias power supply kymographion 9 and vacuum chamber 10；
The method is comprised the following steps：
On step one, the sample stage 8 that pending substrate work-piece is placed in vacuum chamber 10, liner positive bias porous type retaining device
Insulation between 6 and vacuum chamber 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, electric arc
Ion plating target source 3 is arranged on vacuum chamber 10, connects the cathode output end of arc power 2, and the magnetic fields at different levels of multi-stage magnetic field device 4 connect many
Each outfan of level magnetic field power supply 5, both positive and negative polarity connection can be determined according to output magnetic direction, liner positive bias porous
Type retaining device 6 connects the cathode output end of positively biased voltage source 7, opens outside water-cooling circulating system；
Step 2, thin film deposition：By the evacuation of vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work is passed through
Make gas to 0.01Pa～10Pa, open grid bias power supply 1 and grid bias power supply kymographion 9, and adjust the output of grid bias power supply 1
Bias amplitude, pulse frequency and pulse width, the peak voltage of the output pulse of grid bias power supply 1 is 0～1.2kV, pulse frequency
For 0Hz～80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, adjust what is needed
Technological parameter, the current value of the output of arc power 2 is 10 ~ 300A, and by multi-stage magnetic field power supply 5 multi-stage magnetic field device 4 is adjusted, and is kept
Arc-plasma is stably produced in arc ion plating target source 3 and carries out filtration elimination to bulky grain defect, makes arc plasma
Body reaches matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film, arc ion plating
Target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias porous type retaining device 6 keeps direct current positive bias, adjusts output voltage, is made interior
Lining positive bias porous type retaining device 6 attracts bulky grain, and depositing ions are repelled, and reduces plasma interior in pipe
Loss in transmitting procedure, improves the efficiency of transmission of plasma and the deposition velocity of thin film；Liner positive bias porous type baffle plate
Device 6 can coordinate the spacing of the type, size and baffle plate in hole on the design baffle plate of multi-stage magnetic field device 4, baffle plate to connect by bolt
Connect and carry out position using nut and fix, be easy to disassemble assembling and cleaning pollutant；Liner positive bias porous type retaining device 6 with
Activity insulation between multi-stage magnetic field device 4 is assembled together, and liner positive bias porous type retaining device 6 can pollute journey with apparent surface
Degree in time dismounting cleaning and install, it is to avoid the inside pipe wall pollution of multi-stage magnetic field device 4 and be difficult to what is cleared up under linerless board status
Problem, the perforated baffle spacing of liner positive bias porous type retaining device 6 and the length of magnetic field at different levels of multi-stage magnetic field device 4 match
Close, the external diameter of the perforated baffle of liner positive bias porous type retaining device 6 is slightly less than the internal diameter of multi-stage magnetic field device 4；Liner positively biased
Pore size, type in the perforated baffle of pressure porous type retaining device 6 is selected according to different targets and technological parameter, is passed through
The structural grouping of pore size, Change of types and baffle plate at different levels in the perforated baffle of liner positive bias porous type retaining device 6, can
To realize shielding oarse-grained mechanical stop；The material of liner positive bias porous type retaining device 6 may be selected nonmagnetic, resistance to clear
304 stainless steel materials of reason, can as needed select the structure cloth of suitable thickness, the size in aperture, type and baffle plate at different levels
Office, processes according to actual design parameter；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is DC voltage, heavy
Continual and steady attraction can be produced to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device 4 during product
Probability.
The output waveform of grid bias power supply 1 is direct current, pulse, DC pulse is compound or multiple-pulse is compound.
The output direct current of arc power 2, pulse, DC pulse are compound or multiple-pulse is compound.
Arc ion plating target source 3 is using high-melting-point or the simple metal or multicomponent alloy material of low melting point, it is possible to use single
Target, multiple targets or composition target, carry out simple metal thin film, the compound ceramic thin film of different element ratio, function film, polynary many
Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
Working gas selects argon, or working gas from one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas preparing simple metal thin film, the compound ceramic thin film of different element ratio, function film, multi-component multi-layer, super
Lattice, the thin film with nanometer multilayer or gradient-structure.
The proposition of the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate, can fill in porous type baffle plate
Put the middle positive bias using applying to attract bulky grain, the bulky grain problem being prevented effectively from produced by low melting material；Together
When depositing ions are repelled, reduce loss of the plasma between porous type baffle plate in transmitting procedure, improve plasma
Efficiency of transmission and thin film deposition velocity；The size in liner positive bias porous type retaining device aperture, Change of types and at different levels
Structural grouping between baffle plate, it is possible to achieve shield to the mechanical stop of bulky grain defect, reduces bulky grain and passes through porous type baffle plate
Device reaches the probability on deposited samples surface；Liner positive bias porous type retaining device can be realized quickly removing and installing, it is to avoid
The problem of the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status；Apply back bias voltage ginseng on workpiece by adjusting
Number, is conducive to improving the interval Potential Distributing of plasma between target base, fully attracts compound plasma to workpiece motion s, real
The fast deposition of existing thin film；Simultaneously also using the metal plasma that the stable lasting, ionization level of generation of arc ion plating (aip) is high
Body, is conducive to high ionization level ion in the chemosynthesis reaction of surface of the work, and the compound ceramic for preparing different element ratios is thin
Film, function film, multi-component multi-layer, superlattices and the thin film with gradient-structure or simple metal thin film.
Specific embodiment two：Present embodiment is that the method also includes with the difference of embodiment one：
Step 3, can be with reference to using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode
Arc carries out thin film deposition to prepare simple metal thin film, different elements with the compound bias of Dc bias, pulsed bias or DC pulse
The compound ceramic thin film of ratio, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment three：Present embodiment is with the difference of embodiment two, repeatedly execution step one to
Step 3, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment two
It is identical.
Specific embodiment four：Present embodiment is with the difference of embodiment one, repeatedly execution step one to
Step 3, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment two
It is identical.
Arc ion plating target source 3, multi-stage magnetic field device 4 and the liner positively biased of 2 sets or the above can be used in step 2
The multi-stage magnetic field arc ions electroplating method of the liner positive bias porous type baffle plate of the combination of pressure porous type retaining device 6 is carried out with various
Simple metal element and multicomponent alloy material are the thin film deposition of target, then carry out step 3, then the He of execution step two repeatedly
Step 3, so repeatedly, prepares the multilayer films with different stress, microstructure and element ratio.
Claims (7)
1. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate, it is characterised in that the method uses dress
Put including grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device 4, multi-stage magnetic field power supply 5, liner positively biased
Pressure porous type retaining device 6, positively biased voltage source 7, sample stage 8, grid bias power supply kymographion 9 and vacuum chamber 10；
The method is comprised the following steps：
On step one, the sample stage 8 that pending substrate work-piece is placed in vacuum chamber 10, liner positive bias porous type retaining device
Insulation between 6 and vacuum chamber 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, electric arc
Ion plating target source 3 is arranged on vacuum chamber 10, connects the cathode output end of arc power 2, and the magnetic fields at different levels of multi-stage magnetic field device 4 connect many
Each outfan of level magnetic field power supply 5, both positive and negative polarity connection can be determined according to output magnetic direction, liner positive bias porous
Type retaining device 6 connects the cathode output end of positively biased voltage source 7, opens outside water-cooling circulating system；
Step 2, thin film deposition：By the evacuation of vacuum chamber 10, treat that the vacuum in vacuum chamber 10 is less than 10-4During Pa, work is passed through
Gas opens grid bias power supply 1 and grid bias power supply kymographion 9 to 0.01Pa～10Pa, and adjusts the inclined of the output of grid bias power supply 1
Pressure amplitude value, pulse frequency and pulse width, the peak voltage of the output pulse of grid bias power supply 1 is 0～1.2kV, and pulse frequency is
0Hz～80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, the surface in arc ion plating target source 3 is cleaned by the spots moving of electric arc, adjust what is needed
Technological parameter, the current value of the output of arc power 2 is 10 ~ 300A, and by multi-stage magnetic field power supply 5 multi-stage magnetic field device 4 is adjusted, and is kept
Arc-plasma is stably produced in arc ion plating target source 3 and carries out filtration elimination to bulky grain defect, makes arc plasma
Body reaches matrix surface with higher efficiency of transmission by multi-stage magnetic field device 4, carries out the fast deposition of thin film, arc ion plating
Target source 3 and multi-stage magnetic field device 4 avoid the temperature in the course of work from raising problem by water-cooling pattern；
Positively biased voltage source 7 is opened, direct current positive bias is kept to liner positive bias porous type retaining device 6, adjust output voltage, made
Liner positive bias porous type retaining device 6 attracts bulky grain, and depositing ions are repelled, and reduces plasma in pipe
Loss in interior transmitting procedure, improves the efficiency of transmission of plasma and the deposition velocity of thin film；Liner positive bias porous type keeps off
Panel assembly 6 can coordinate the spacing of the type, size and baffle plate in hole on the design baffle plate of multi-stage magnetic field device 4, baffle plate to pass through bolt
Connect and carry out position using nut and fix, be easy to disassemble assembling and cleaning pollutant；Liner positive bias porous type retaining device 6
The activity insulation between multi-stage magnetic field device 4 is assembled together, and liner positive bias porous type retaining device 6 can be polluted with apparent surface
Degree is dismantled in time cleaning and is installed, it is to avoid the inside pipe wall pollution of multi-stage magnetic field device 4 and be difficult to clear up under linerless board status
Problem, the perforated baffle spacing of liner positive bias porous type retaining device 6 and the length of magnetic field phases at different levels of multi-stage magnetic field device 4
Coordinate, the external diameter of the perforated baffle of liner positive bias porous type retaining device 6 is slightly less than the internal diameter of multi-stage magnetic field device 4；Liner is just
Pore size, type in the perforated baffle of bias porous type retaining device 6 is selected according to different targets and technological parameter, is led to
The structural grouping of the pore size, Change of types and baffle plate at different levels crossed in the perforated baffle of liner positive bias porous type retaining device 6,
Can realize shielding oarse-grained mechanical stop；The material of liner positive bias porous type retaining device 6 may be selected nonmagnetic, resistance to
304 stainless steel materials of cleaning, can as needed select the structure of suitable thickness, the size in aperture, type and baffle plate at different levels
Layout, processes according to actual design parameter；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is DC voltage,
Continual and steady attraction can be produced to bulky grain defect, greatly reduce bulky grain by multi-stage magnetic field device 4 in deposition process
Reach the probability of film surface.
2. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that the method institute use device also includes that grid bias power supply kymographion 9 is used to show the pulse voltage that grid bias power supply 1 sends
And current waveform, by the output waveform for adjusting grid bias power supply 1, plated film ion is effectively attracted, carry out the heavy of thin film
Product and control deposition targets ratio in the film, realizes the regulation of plasma energy.
3. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that the output pulse of grid bias power supply 1 is pulse, DC pulse is compound or multiple-pulse is compound.
4. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that the method can singly cover or cover more combination and prepare simple metal thin film, compound ceramic thin film, the work(of different element ratios
Can thin film and the high-quality thin-film with nanometer multilayer or gradient-structure.
5. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that the method also includes：
Step 3, can be with reference to using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode
Arc carries out thin film deposition to prepare simple metal thin film, different elements with the compound bias of Dc bias, pulsed bias or DC pulse
The compound ceramic thin film of ratio, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
6. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that repeatedly execution step one using 2 sets or covers the system to prepare simple metal thin film, different element ratios more to step 2
Compound ceramic thin film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
7. the multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle plate according to claim 1, its feature
It is that working gas selects argon, or working gas is from one or more mixed in nitrogen, acetylene, methane, silane or oxygen
Close gas prepare simple metal thin film, the compound ceramic thin film of different element ratio, function film and with nanometer multilayer or
The high-quality thin-film of gradient-structure.
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| CN201710052985.6A CN106637096B (en) | 2017-01-22 | 2017-01-22 | The multi-stage magnetic field arc ions electroplating method of liner positive bias porous type baffle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989037A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field and the compound vacuum coating method of liner perforated baffle |
| CN109989032A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field and the compound vacuum deposition method of liner perforated baffle |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925940A (en) * | 2016-06-12 | 2016-09-07 | 魏永强 | Multi-stage magnetic field arc ion plating method for lining positive bias straight pipe |
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2017
- 2017-01-22 CN CN201710052985.6A patent/CN106637096B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105925940A (en) * | 2016-06-12 | 2016-09-07 | 魏永强 | Multi-stage magnetic field arc ion plating method for lining positive bias straight pipe |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989037A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field and the compound vacuum coating method of liner perforated baffle |
| CN109989032A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | A kind of combination field and the compound vacuum deposition method of liner perforated baffle |
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Effective date of registration: 20191010 Address after: 450015 Henan Province, Zhengzhou District, No. 27 University Road, No. 2 Patentee after: Zhengzhou Institute of Aeronautical Industry Management Address before: 450015, building 4, unit 2, building 26, Zheng Hang family hospital, 2 Middle School Road, 27 District, Henan, Zhengzhou Patentee before: Wei Yong Qiang |