CN104862653B - Arc ion plating and the compound deposition process of high-power impulse magnetron sputtering - Google Patents
Arc ion plating and the compound deposition process of high-power impulse magnetron sputtering Download PDFInfo
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Abstract
Arc ion plating and the compound deposition process of high-power impulse magnetron sputtering, belong to technical field of material surface treatment, and the present invention is solution using the simple metal or multicomponent alloy material and nonmetallic materials of low melting point（Especially semi-conducting material and insulating materials）The problem of the low and current high-power impulse magnetron sputtering discharge instability of limitation, conventional magnetron sputtering technology ionization level and thin film deposition efficiency used as target bulky grain problem present in conventional arc ion electroplating method, extension arc ion plating target.The inventive method includes：First, on the sample stage that workpiece to be coated is placed in vacuum chamber, first powered-down source is connected, two, thin film deposition：Treat that the vacuum in vacuum chamber is less than 10‑2During Pa, it is passed through working gas and adjusts air pressure, after opening line related to target surface clean, the regulation of grid bias power supply and high-power impulse magnetron sputtering power supply output waveform is realized by synchronous waveform coalignment, the technological parameter needed for setting carries out thin film deposition.
Description
Technical field
The present invention relates to arc ion plating and the compound deposition process of high-power impulse magnetron sputtering, belong at material surface
Reason technical field.
Background technology
Originally magnetron sputtering technique uses direct current supply pattern, compared to arc ions electroplating method, does not have bulky grain defect,
The low-temperature sputter deposition of various materials can be realized, but the ionization level of its sputter material is very low, and the power density of sputtering target exists
50W/cm2, enough ion populations are cannot get during thin film deposition, cause deposition efficiency very low, while the energy of ion institute band compared with
It is low, make Thin Film Tissue not fine and close enough., V. Kouznetsov of Linkoping,Sweden university et al. in 1999（Kouznetsov V,
Macák K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron
sputter technique utilizing very high target power densities [J]. Surf Coat
Tech, 1999, 122(2-3): 290-293.）Propose high-power impulse magnetron sputtering technology（HPPMS）, it is using higher
Pulse peak power and relatively low pulse width improve the ionization level of sputter material, while target cathode will not increase because of overheat
Plus the requirement of target cooling.Its peak power improves 100 times, about 1000 ~ 3000W/ compared to conventional DC magnetron sputtering
cm2, the density of plasma reaches 1018m-3The order of magnitude, its central region ion concentration is up to 1019m-3The order of magnitude, while splashing
The ionization level for penetrating material reaches as high as more than 90%, and without the bulky grain in current ionization level highest arc ions electroplating method
Defect.2008 afterwards, and each colleges and universities also begins to launch the research for high-power impulse magnetron sputtering technology at home（Li Xi
The flat high power combined pulsed magnetron sputtering plasma characteristics of and TiAlN thin film are prepared [D];Harbin Institute of Technology,
2008. Wuzhongs shake, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, the flat high-power impulse magnetron sputterings technologies of Li Xi
Development with research [J] vacuum, 2009,46 (3):18-22. and Mu Zongxin, Mu Xiaodong, Wang Chun, Jia Li, Dong
Rush dc sources coupling high power pulse non-balance magnetically controlled sputter ionization property [J] Acta Physica Sinicas, 2011,60 (1):
422-428.）, but because the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, and target current potential is relatively low, target gold
Category substantial amounts of metal ion after ionization is sucked back into target surface, fails to reach the deposition that matrix surface realizes film, causes
The efficiency of thin film deposition is substantially reduced, the paces for influenceing it to be further substituted with common magnetron sputtering and arc ion plating, follow-up
Popularization and application aspect receive a definite limitation.
At present, it is also easy to produce greatly in the simple metal using low melting point or multicomponent alloy material to solve arc ions electroplating method
The problem of grain defect, mainly there is following several：
The first：Bulky grain is filtered out using the method for Magnetic filter, such as Chinese patent be used for material surface modifying from
Daughter immersion ion injection device（Publication number：CN1150180, publication date：On May 21st, 1997）It is middle to use 90 ° of Magnetic filters
Bend pipe is filtered to the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan etc. of He'nan University (such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei filtered cathode arc plasmas prepare TiAlN thin film
Influence China YouSe Acta Metallurgica Sinica 2004,14 (8) of the middle sedimentary condition to film texture:1264-1268.) in article
Middle " S " magnetic filter that made is filtered to the bulky grain of cathode arc, also American scholar Anders et al.（Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
arc plasmas [J]. Surf Coat Tech, 2000, 133-134: 96-100.）The Twist filter's of proposition
Magnetic filter, although the efficiency of transmission that these methods have certain effect, plasma in terms of filtering and eliminating bulky grain is damaged
Lose seriously, substantially reduce ion current density.Based on that can filter on the basis of bulky grain can guarantee that efficiency again, Chinese patent is true
Empty cathode arc straight filter (publication number：CN1632905, publication date：On June 29th, 2005) the middle side for proposing straight tube filtering
Method, but which in turn reduces filter effect.In a word, related researcher is by contrasting various Magnetic filter methods（Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J] Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007, 35(4): 992-999.）It was found that arc ion plating plasma after magnetic filter by keeping
Efficiency of transmission and elimination bulky grain high is very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.
Second, the method using shielding is stopped directly shields big using baffle plate such as before arc ion plating target source
Grain（Miernik K, Walkowicz J, Bujak J. Design and performance of the
microdroplet filtering system used in cathodic arc coating deposition [J].
Plasmas & Ions, 2000, 3(1-4): 41-51.）；Or using bulky grain and arc-plasma transmission speed
Difference, applies a high speed rotating unit outside arc source（Utsumi T, English J H. Study of electrode
products emitted by vacuum arcs in form of molten metal particles [J]. J Appl
Phys, 1975, 46(1): 126-131.）, by adjusting the velocity of rotation of rotating vane, realize the resistance to bulky grain defect
Gear filtering；Or hole is drilled with baffle plate, by adjusting the spacing of two-layer baffle plate so as to the transmission of arc-plasma, resistance
Gear bulky grain deposits to the dual-layered baffle plate screening arrangement of film surface（Zhao Y, Lin G, Xiao J, et al.
Synthesis of titanium nitride thin films deposited by a new shielded arc ion
plating [J]. Appl Surf Sci, 2011, 257(13): 5694-5697.）；Disappear also by regulating fender angle
Except the flap type screening arrangement of bulky grain（Zimmer O. Vacuum arc deposition by using a
Venetian blind particle filter [J]. Surf Coat Tech, 2005, 200(1-4): 440-
443.）.Stop shields motion path by limiting bulky grain and plasma, using good diffractive of arc-plasma
To prepare film, but the method can cause the efficiency of transmission of plasma to lose serious, receive in actual applications certain
Limitation.
3rd, using the electric field suppressing method of bias on matrix, in arc-plasma, due to the motion speed of electronics
Degree is far longer than in the movement velocity of ion, unit interval the electron number for reaching large particle surface more than number of ions, makes bulky grain
Elecrtonegativity is presented.When back bias voltage is applied on matrix, electric field will produce repulsive interaction to electronegative bulky grain, and then reduce thin
The generation of film surface bulky grain defect.German scholar Olbrich et al.（Olbrich W, Fessmann J, Kampschulte
G, Ebberink J. Improved control of TiN coating properties using cathodic arc
evaporation with a pulsed bias [J]. Surf Coat Tech, 1991, 49(1-3):258-262. and
Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of
TiN and Zr(C, N) at low substrate temperature using a pulsed bias voltage
[J]. Mat Sci Eng A, 1991, 140: 830-837.）Replace traditional Dc bias using pulsed bias, formed
A kind of new physical gas phase deposition technology --- pulsed bias arc ion plating technology, not only greatly reduces film surface big
The number of particle, also overcomes Traditional DC and biases the problems such as substrate temperature for causing is too high, stress in thin films is larger.Big couple very much in love
Woods Guoqiang of work university et al.（Process ba- sis research [D] Dalians University of Science ＆ Engineering of woods Guoqiang pulsed bias arc ion platings are big
Learn, 2008. and Huang Meidong, woods Guoqiang, Dong Chuan, Sun Chao, hear Bias On Morphologies of Films Prepared By Arc Ion Plating immediately
Influencing Mechanism [J] Acta Metallurgica Sinicas, 2003,39 (5): 510-515.）Bulky grain defect is caused to reduce for pulsed bias
Mechanism conduct in-depth analysis, by the adjustment to technological parameters such as pulsed bias amplitude, frequency and pulse widths, Ke Yigai
The sheaths kinetic characteristic of kind arc-plasma, reduces the bulky grain defect counts of film surface, the quality of film is improved, in reality
It is widely used in the production on border, but bulky grain defect can not be still completely eliminated.
4th, the optimization of technological parameter, by adjusting operating air pressure（Brown I G. Cathodic arc
deposition of films. Ann Rev Mater Sci, 1998, 28(1):243-269. and Chen Kangmin, Zhang Xiao
Lemon, Zheng Chenchao, Huang Yan, Guan Qingfeng, Gong Lei, Sun Chao nitrogen partial pressures are to arc ion plating CrNx organization structure of film
Influence [J] vacuum sciences and Technology, 2010,30 (6): 662-666.）Spots moving is controlled with using magnetic field（Youth
Wenchang, Xiao Jinquan, Gong Jun, Sun Chao, Huang Rongfang hear shadow of the axisymmetrical magnetic fields to arc ion plating spots moving immediately
Ring Acta Metallurgica Sinicas, 2010,46 (3):372-379. and Zhao Yanhui, Lang Wenchang, Xiao Jinquan, Gong Jun, Sun Chao electric arcs
The design of rotating transverse magnetic field arc source [J] vacuum sciences and the Technology of ion plating, 2013,33 (4): 387-391.）
Etc. method, the bulky grain defect of film surface can be to a certain extent reduced, but thin film preparation process parameter can be caused
Adjustable range is subject to certain restrictions.American scholar Anders is also proposed（Anders A. Growth and decay of
macroparticles: A feasible approach to clean vacuum arc plasmas. J Appl Phys,
1997, 82(8): 3679-3688）Using infrared laser come the method for assisted evaporative bulky grain, but process equipment into
This is too expensive.
6th, new method is introduced：Such as the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent（It is public
The number of opening：CN101838795A, publication date：On September 22nd, 2010）The utilization high pressure and impulsive synchronization coalignment for being proposed are filled
Divide using the advantage of high-power impulse magnetron sputtering, realize high-power impulse magnetron sputtering technology in the prominent of field ion implantation
It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions can not be too high, can otherwise cause high-tension electricity
The damage in source.
The content of the invention
The invention aims to be the simple metal or multicomponent alloy material and nonmetallic materials for solving use low melting point（Especially
It is semi-conducting material and insulating materials）As target bulky grain, conventional magnetron present in conventional arc ion electroplating method
The problem of sputtering technology ionization level and the low and current high-power impulse magnetron sputtering discharge instability of thin film deposition efficiency, with eutectic
The simple metal or multicomponent alloy material and nonmetallic materials of point（Especially semi-conducting material and insulating materials）As high power arteries and veins
The target of magnetron sputtering is rushed, recycles arc ions electroplating method that continual and steady plasma can be produced to eliminate high power
The discharge instability phenomenon and ion resorption effect of magnetron sputtering technique are applying workpiece surface the adverse effect of thin film deposition
Plus the situation of back bias voltage can continuously, it is fine and close prepare high-quality thin-film, while realizing to constituent content addition control, drop in film
The production cost of low use alloys target, the deposition efficiency for improving film, reduction discharge instability and bulky grain defect are to film
Growth and the adverse effect of performance, it is proposed that arc ion plating and the compound deposition process of high-power impulse magnetron sputtering.
The inventive method institute use device includes grid bias power supply 1, arc power 2, arc ion plating target source 3, high power pulse
Magnetron sputtering power supply 4, high-power impulse magnetron sputtering target source 5, synchronous waveform coalignment 6, vacuum chamber 7, sample stage 8, bias
Power supply wave shape oscillograph 9 and high-power impulse magnetron sputtering power supply wave shape oscillograph 10；
The method is comprised the following steps：
On step one, the sample stage 8 that pending workpiece is placed in vacuum chamber 7, workpiece connects the pulse output of grid bias power supply 1
Arc power 2 is connected in end, the arc ion plating target source 3 on vacuum chamber 7, and high-power impulse magnetron sputtering target source 5 meets Gao Gong
The high power pulse output end of rate pulsed magnetron sputtering power supply 4；
Step 2, thin film deposition：Vacuum chamber 7 is vacuumized, treats that the vacuum in vacuum chamber 7 is less than 10-2During Pa, work is passed through
Make gas to 0.01Pa~10Pa, open synchronous waveform coalignment 6, the synchronous waveform exported according to grid bias power supply 1 triggers letter
Number the high-power impulse magnetron sputtering power supply 4 is controlled to work；
Grid bias power supply 1 is opened, and it is 0~1.2kV to adjust the magnitude of voltage of the output pulse of grid bias power supply 1, pulse frequency is 0Hz
~80kHz, pulse width 1 ~ 90%；
High-power impulse magnetron sputtering power supply 4 is opened, the pre- ionization of direct current build-up of luminance is first passed through, technological parameter needed for regulation is high
The magnitude of voltage of the output pulse of Power Impulse Magnetron shielding power supply 4 is 300V~2500V, and pulse width is 0 μ s~1000 μ s, pulse
10~1000Hz of frequency, electric current is 10~1000A；
Control the output voltage of grid bias power supply 1 and high-power impulse magnetron sputtering power supply 4 defeated by synchronous waveform coalignment 6
Go out voltage, make both phase differences for -1000 μ s~1000 μ s, carry out the compound pottery of simple metal film, different element ratios
It is prepared by porcelain film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Advantages of the present invention：A. using high-power impulse magnetron sputtering technology by high pressure low-frequency pulse realize target compared with
Metallic ionization level high, it is not necessary to others auxiliary ionization device；B. high-power impulse magnetron sputtering technology is for eutectic
The simple metal or multicomponent alloy material of point do not produce bulky grain defect, therefore do not need filter, it is possible to achieve ionization ion
High efficiency of transmission；C. arc ion plating target source can make up the discharge instability limitation in high-power impulse magnetron sputtering target source, protect
The high density for demonstrate,proving depositing ions is persistently produced；D. as a result of synchronous waveform coalignment, matrix can be made effectively to attract
Ion produced by high-power impulse magnetron sputtering target source, reduces high-power impulse magnetron sputtering technology and produced ion is returned
Inhale effect, it is ensured that film deposition rate, greatly improve the energy of depositing ions；E. by adjusting high power pulse magnetic control
The technological parameter in sputtering target source, with reference to the technological parameter in arc ion plating target source, it is possible to achieve various units in compound plasma
The ion ratio of element, realizes the thin film deposition of different element ratios；F. the microstructure and properties of prepared film can pass through
Pulsed bias parameter is adjusted, and realizes that energetic ion grows to film using the amplitude of pulsed bias, pulse width and frequency
Pinning effect, improve film growth texture and stress state, improve bond strength；G. due to eliminating low melting point
Simple metal or multicomponent alloy material and nonmetallic materials（Especially semi-conducting material and insulating materials）In arc ion plating
Application limitation, it is possible to achieve the film that originally addition of these elements and ratio are adjusted in multi-element film preparation process；H. institute
The film of preparation avoids the bulky grain defect of low melting point element, and texture is finer and close, can further improve film
Mechanical property.
Step 3, can individually use Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulse
The compound bias of cathode arc combination Dc bias, pulsed bias or DC pulse is compound, and to carry out thin film deposition thin to prepare simple metal
Film, the compound ceramic film of different element ratios, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Brief description of the drawings
Fig. 1 is arc ion plating of the present invention and the compound deposition process sketch of high-power impulse magnetron sputtering, and Fig. 2 is bias
The timing chart of power supply, Fig. 3 synchronous waveform coalignments, Fig. 4 grid bias power supplies impulse waveform and high-power impulse magnetron sputtering
Impulse waveform integral multiple matching figure, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse wave during Fig. 5 outs of phase
Shape matching figure, grid bias power supply impulse waveform matches figure with high-power impulse magnetron sputtering impulse waveform during Fig. 6 difference pulse widths.
Specific embodiment
Specific embodiment one：With reference to Fig. 1 and Fig. 2 explanation present embodiment, present embodiment arc ion plating and
The compound deposition process institute use device of high-power impulse magnetron sputtering includes grid bias power supply 1, arc power 2, arc ion plating target
Source 3, high-power impulse magnetron sputtering power supply 4, high-power impulse magnetron sputtering target source 5, synchronous waveform coalignment 6, vacuum chamber
7th, sample stage 8, grid bias power supply kymographion 9 and high-power impulse magnetron sputtering power supply wave shape oscillograph 10；
The method is comprised the following steps：
On step one, the sample stage 7 that pending workpiece is placed in vacuum chamber 7, workpiece connects the pulse output of grid bias power supply 1
End, the magnetic controlled sputtering target source 4 on vacuum chamber 7 connects the high power pulse output end of high-power impulse magnetron sputtering power supply 4；
Step 2, thin film deposition：Vacuum chamber 7 is vacuumized, treats that the vacuum in vacuum chamber 7 is less than 10-2During Pa, work is passed through
Make gas to 0.01Pa~10Pa, the pulsed bias synchronous triggering signal that synchronous waveform coalignment 6 is exported according to grid bias power supply 1
To control high-power impulse magnetron sputtering power supply 4 to work；
Grid bias power supply 1 is opened, and it is 0~1.2kV, pulse frequency to adjust the peak voltage of the output pulse of grid bias power supply 1
It is 0Hz~80kHz, pulse width 5 ~ 90%；
High-power impulse magnetron sputtering power supply 4 is opened, the pre- ionization of direct current build-up of luminance is first passed through, technological parameter needed for regulation is high
The magnitude of voltage of the output pulse of Power Impulse Magnetron shielding power supply 4 is 300V~2500V, and pulse width is 0 μ s~1000 μ s, pulse
10~1000Hz of frequency, electric current is 10~1000A；
Control the output voltage of grid bias power supply 1 and high-power impulse magnetron sputtering power supply 4 defeated by synchronous waveform coalignment 6
Go out voltage-phase, carry out thin film deposition；
Synchronous waveform coalignment 6 in present embodiment realized using two 1/2 CD4098 chips, physical circuit
Structure is shown in Figure 3, and the bias synchronous triggering signal of the output of grid bias power supply 1 is transferred to synchronous waveform coalignment 6, and waveform is same
The step output Remote triggering signal control high-power impulse magnetron sputtering of coalignment 6 power supply 4 works, synchronous waveform coalignment 6
Two power supply signal frequencies of grid bias power supply 1 and high-power impulse magnetron sputtering power supply 4 can be realized, it is possible to carry out different phases
The regulation of position；
During the pre- ionization of direct current build-up of luminance, chopped pulse starter time delay or make pulse starter easily, direct current
Current value changes according to the power output in high-power impulse magnetron sputtering target source 5, output voltage and target area, or directly gradually
Boosted output voltages value, makes the build-up of luminance of high-power impulse magnetron sputtering target source 5；
The output waveform of grid bias power supply 1 is direct current, pulse, DC pulse is compound or multiple-pulse is compound；
The output of arc power 2 direct current, pulse, DC pulse are compound or multiple-pulse is compound；
The output waveform of high-power impulse magnetron sputtering power supply 4 is direct current, pulse, DC pulse is compound or multiple-pulse is multiple
Close；
Arc ion plating target source 3 uses dystectic simple metal or multicomponent alloy material, high-power impulse magnetron sputtering target
Source 5 uses the simple metal or multicomponent alloy material and nonmetallic materials of low melting point（Especially semi-conducting material and insulating materials）,
Simple metal film, compound ceramic film, the work(of different element ratios can be carried out using single target, multiple targets or composition target
Can film, multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure；
Working gas selects argon gas, or working gas from one or more in nitrogen, acetylene, methane, silane or oxygen
Mixed gas prepare simple metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure；
The proposition of arc ion plating and the compound deposition process of high-power impulse magnetron sputtering, makes full use of high power pulse
Sputtering target source carries out the generation and ionization of ion simultaneously in magnetron sputtering, realizes the simple metal or multicomponent alloy material of low melting point
And nonmetallic materials（Especially semi-conducting material and insulating materials）Application in arc ion plating, is prevented effectively from low melting point material
Bulky grain problem produced by material, breaches nonmetallic materials again（Especially semi-conducting material and insulating materials）In arc ions
Application limitation in plating；Control to apply back bias voltage and high power pulse magnetic control on workpiece using synchronous waveform coalignment simultaneously
Splash-proofing sputtering process parameter, is conducive to improving the interval Potential Distributing of high-power impulse magnetron sputtering target source plasma, fully attracts
The ion that high-power impulse magnetron sputtering is produced solves high-power impulse magnetron sputtering intermediate ion resorption effect to workpiece motion s, effectively
The problem that thin film deposition efficiency should be caused low；Simultaneously using the gold that the stable lasting, ionization level of generation of arc ion plating (aip) is high
Category plasma, makes up the defect of high-power impulse magnetron sputtering technology discharge instability, is conducive to ionization level ion high in work
The chemosynthesis reaction on part surface, prepares the compound ceramic film of different element ratios, function film, multi-component multi-layer, super brilliant
Lattice and the film with gradient-structure or simple metal film.
Specific embodiment two：Present embodiment is with the difference of implementation method one, the method institute use device
Also include grid bias power supply kymographion 8 and high-power impulse magnetron sputtering power supply wave shape oscillograph 9, grid bias power supply waveform oscillography
Device 8 is used to show the voltage and current waveform that grid bias power supply 1 sends that high-power impulse magnetron sputtering power supply wave shape oscillograph 9 to be used
The pulse voltage and current waveform sent in display high-power impulse magnetron sputtering power supply 4, other are identical with implementation method one.
Specific embodiment three：The difference of present embodiment, present embodiment and implementation method one is illustrated with reference to Fig. 3
Part is, during plated film, is controlled first to open grid bias power supply 1 by synchronous waveform coalignment 6, is then then turned on high power pulse magnetic
Control shielding power supply 4, other are identical with implementation method one.
Specific embodiment four：Present embodiment is to be matched by synchronous waveform and filled with the difference of implementation method one
Put 6 control grid bias power supplies 1 and high-power impulse magnetron sputtering power supply 4 is opened simultaneously, high-power impulse magnetron sputtering power supply 4 is exported
The cycle of pulse is the integral multiple that grid bias power supply 1 exports pulse, and other are identical with implementation method one, as shown in figure 4, high power arteries and veins
The pulse period for rushing the output of magnetron sputtering power supply 4 is 10 times of the pulse period of the output of grid bias power supply 1.
Specific embodiment five：The difference of present embodiment, present embodiment and implementation method one is illustrated with reference to Fig. 5
It is that the bias pulse waveform phase of the output high-power pulse of high-power impulse magnetron sputtering power supply 4 and the output of grid bias power supply 1 can
Adjust, in same pulse width, different phase differences allows two power supply output pulse waveforms all to overlap, partially overlap or not
Overlap, so as to two Proper Matchs of power pulse of process choice according to thin film deposition, other are identical with implementation method one.
Specific embodiment six：The difference of present embodiment, present embodiment and implementation method one is illustrated with reference to Fig. 6
It is that the pulse width of the output high-power pulse of high-power impulse magnetron sputtering power supply 4 and the output pulse of grid bias power supply 1 individually may be used
Adjust, different pulse widths cause two output pulse waveforms of power supply can with the former cover the latter, the latter cover the former or it is complete
Full weight is closed, and carries out different thin film deposition processes selections, and other are identical with implementation method one.
Specific embodiment seven：Present embodiment is that the method also includes with the difference of implementation method one：
Step 3, can individually use Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulse
The compound bias of cathode arc combination Dc bias, pulsed bias or DC pulse carries out thin film deposition to prepare simple metal film, no
With the compound ceramic film of element ratio, function film and the high-quality thin-film with nanometer multilayer or gradient-structure；
In step 2 magnetron sputtering first can be carried out with reference to high-tension pulse using high-power impulse magnetron sputtering power supply 4
Grid bias power supply carries out ion implantation and deposition, improves the adhesion of film and matrix, then carries out step 3, obtains certain thickness
Film.
Specific embodiment eight：Present embodiment is with the difference of implementation method seven, perform repeatedly step one to
Step 3, prepares the multilayer films with different stress, microstructure and element ratio, other and implementation method seven
It is identical；
First can carry out magnetron sputtering combination high pressure using high-power impulse magnetron sputtering power supply 4 in step 2 carries out ion
Injection and deposition, improve the adhesion of film and matrix, then carry out step 3, and step 2 and step 3 are then performed repeatedly,
So repeatedly, the multilayer films with different stress, microstructure and element ratio are prepared.
Claims (6)
1. the deposition process that arc ion plating and high-power impulse magnetron sputtering are combined, it is characterised in that the method uses dress
Put including grid bias power supply（1）, arc power（2）, arc ion plating target source（3）, high-power impulse magnetron sputtering power supply（4）, Gao Gong
Rate pulsed magnetron sputtering target source（5）, synchronous waveform coalignment（6）, vacuum chamber（7）, sample stage（8）, grid bias power supply waveform shows
Ripple device（9）With high-power impulse magnetron sputtering power supply wave shape oscillograph（10）；
The method is comprised the following steps：
Step one, pending workpiece is placed in vacuum chamber（7）Interior sample stage（8）On, workpiece connects grid bias power supply（1）Output
End, installed in vacuum chamber（7）On arc ion plating target source（3）Connect arc power（2）Output end, high-power impulse magnetron sputtering
Target source（5）Connect high-power impulse magnetron sputtering power supply（4）High power pulse output end；
Step 2, thin film deposition：By vacuum chamber（7）Vacuumize, treat vacuum chamber（7）Interior vacuum is less than 10-2During Pa, work is passed through
Make gas to 0.01Pa~10Pa, open grid bias power supply（1）, and adjust grid bias power supply（1）The bias amplitude of output, pulse frequency
And pulse width, open grid bias power supply（1）, and adjust grid bias power supply（1）The peak voltage for exporting pulse is 0~1.2kV, arteries and veins
Frequency is rushed for 0Hz~80kHz, pulse width 1 ~ 90%；
Open high-power impulse magnetron sputtering power supply（4）, first pass through direct current build-up of luminance carries out pre- ionization to working gas, to high power
Pulsed magnetron sputtering target source（5）Surface is cleaned；
Open arc power（2）, by the spots moving of electric arc to arc ion plating target source（3）Surface cleaned, regulation need
The technological parameter wanted, arc power（2）The current value of output is 40 ~ 300A, keeps the stabilization generation of arc-plasma；
Open synchronous waveform coalignment（6）, according to grid bias power supply（1）The synchronous triggering signal of output, by synchronous waveform
With device（6）To control high-power impulse magnetron sputtering power supply（4）Work, required technological parameter is configured, Gao Gong
Rate pulsed magnetron sputtering power supply（4）The magnitude of voltage for exporting pulse is 300V~2500V, and pulse width is 0 μ s~1000 μ s, pulse
10~1000Hz of frequency, electric current is 10~1000A, controls grid bias power supply（1）Output voltage and high-power impulse magnetron sputtering electricity
Source（4）The phase of output voltage, effective attraction is carried out to plated film ion, carries out the deposition of film and the proof gold of control low melting point
Category or multicomponent alloy target and nonmetallic materials ratio in the film；
Grid bias power supply kymographion（9）For showing grid bias power supply（1）The pulse voltage and current waveform for sending, high power arteries and veins
Rush magnetron sputtering power supply wave shape oscillograph（10）For showing high-power impulse magnetron sputtering power supply（4）The pulse voltage that sends and
Current waveform；
Synchronous waveform coalignment（6）Grid bias power supply is opened in control simultaneously（1）High-power impulse magnetron sputtering power supply（4）, then
It is then turned on arc power（2）Thin film deposition is carried out, by synchronous waveform coalignment（6）Control high-power impulse magnetron sputtering power supply
（4）The waveform parameter of output, high-power impulse magnetron sputtering power supply（4）The cycle for exporting pulse is grid bias power supply（1）Output arteries and veins
The integral multiple of punching.
2. the deposition process that arc ion plating according to claim 1 and high-power impulse magnetron sputtering are combined, its feature
It is, high-power impulse magnetron sputtering power supply（4）Output pulse is pulse, DC pulse is compound or multiple-pulse is compound, arc electricity
Source（2）The electric current of output is compound for direct current, pulse or DC pulse, and the output pulse of grid bias power supply 1 is pulse, DC pulse
Compound or multiple-pulse is compound.
3. the deposition process that arc ion plating according to claim 1 and high-power impulse magnetron sputtering are combined, its feature
It is that the method also includes：
Step 3, can be individually compound partially using Traditional DC magnetron sputtering combination Dc bias, pulsed bias or DC pulse
Pressure, the compound bias of pulsed magnetron sputtering combination Dc bias, pulsed bias or DC pulse, conventional arc ion plating combination direct current
The compound bias of bias, pulsed bias or DC pulse, pulsed cathode arc combination Dc bias, pulsed bias or DC pulse are combined
Bias carries out thin film deposition to prepare simple metal film, the compound ceramic film of different element ratios, function film and have
The film of nanometer multilayer or gradient-structure.
4. the deposition process that arc ion plating according to claim 1 and high-power impulse magnetron sputtering are combined, its feature
It is to perform step one repeatedly to step 2 to prepare compound ceramic film, the work(of simple metal film, different element ratios
Can film and the film with nanometer multilayer or gradient-structure.
5. the deposition process that arc ion plating according to claim 1 and high-power impulse magnetron sputtering are combined, its feature
It is, high-power impulse magnetron sputtering target source（5）The target body material for using can be the simple metal of low melting point or multicomponent alloy target
Material and nonmetallic materials.
6. the deposition process that arc ion plating according to claim 1 and high-power impulse magnetron sputtering are combined, its feature
It is that working gas selects argon gas, or working gas is from one or more mixed in nitrogen, acetylene, methane, silane or oxygen
Close gas prepare simple metal film, the compound ceramic film of different element ratio, function film and with nanometer multilayer or
The film of gradient-structure.
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| CN105154838B (en) * | 2015-09-22 | 2018-06-22 | 华南理工大学 | A kind of method of high ionization level high-power impulse magnetron sputtering deposition film |
| CN105887012B (en) * | 2016-01-11 | 2018-10-30 | 天津职业技术师范大学 | A kind of Zr-B-N nano-composite coatings preparation process |
| CN105803411A (en) * | 2016-05-11 | 2016-07-27 | 魏永强 | Combined method of arc ion plating and twin target bipolar high-power pulsed magnetron sputtering |
| CN107723674A (en) * | 2017-11-08 | 2018-02-23 | 重庆大学 | A kind of ion gun aids in high-power impulse magnetron sputtering precipitation equipment |
| CN109989030A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | Movable magnet field arc ion plating and high-power impulse magnetron sputtering composite deposition method |
| CN108441832B (en) * | 2018-03-28 | 2020-07-10 | 北京师范大学 | Centrifugal pump impeller surface treatment method and equipment |
| CN108570642B (en) * | 2018-07-25 | 2024-05-03 | 衡阳舜达精工科技有限公司 | Low-temperature controllable deposition method and device for carbon film |
| CN110911947B (en) * | 2019-11-13 | 2020-09-04 | 中国人民解放军军事科学院国防科技创新研究院 | Pulse width compression device and method based on electronegative gas plasma |
| CN111146967B (en) * | 2019-12-25 | 2023-08-15 | 兰州空间技术物理研究所 | High-reliability edge surface breakdown discharge trigger type pulse arc striking power supply |
| CN113529038A (en) * | 2021-07-19 | 2021-10-22 | 中山市气相科技有限公司 | Preparation method of friction-resistant and corrosion-resistant TiN film |
| CN115058692B (en) * | 2022-05-19 | 2023-09-15 | 原子高科股份有限公司 | Preparation method of target film of neutron tube target |
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