CN109989021A - A kind of combination field and the compound vacuum coating method of liner bias conical pipe - Google Patents
A kind of combination field and the compound vacuum coating method of liner bias conical pipe Download PDFInfo
- Publication number
- CN109989021A CN109989021A CN201711491566.9A CN201711491566A CN109989021A CN 109989021 A CN109989021 A CN 109989021A CN 201711491566 A CN201711491566 A CN 201711491566A CN 109989021 A CN109989021 A CN 109989021A
- Authority
- CN
- China
- Prior art keywords
- power supply
- pulse
- magnetron sputtering
- power
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 41
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 claims abstract description 147
- 238000000151 deposition Methods 0.000 claims abstract description 91
- 230000008021 deposition Effects 0.000 claims abstract description 80
- 230000005540 biological transmission Effects 0.000 claims abstract description 71
- 230000007547 defect Effects 0.000 claims abstract description 62
- 238000007733 ion plating Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000002360 preparation method Methods 0.000 claims abstract description 30
- 238000005516 engineering process Methods 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 205
- 150000002500 ions Chemical class 0.000 claims description 58
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 53
- 230000000694 effects Effects 0.000 claims description 45
- 238000009434 installation Methods 0.000 claims description 39
- 230000001360 synchronised effect Effects 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 27
- 230000010355 oscillation Effects 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 16
- 238000005452 bending Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 210000001367 artery Anatomy 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 14
- 210000003462 vein Anatomy 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000010891 electric arc Methods 0.000 claims description 13
- 230000005404 monopole Effects 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 11
- 230000008030 elimination Effects 0.000 claims description 11
- 238000003379 elimination reaction Methods 0.000 claims description 11
- 238000013461 design Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 230000002411 adverse Effects 0.000 claims description 8
- 238000002679 ablation Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000003344 environmental pollutant Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 231100000719 pollutant Toxicity 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- 230000002829 reductive effect Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000005764 inhibitory process Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000004913 activation Effects 0.000 abstract 1
- 238000002294 plasma sputter deposition Methods 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 82
- 239000000956 alloy Substances 0.000 description 17
- 230000008018 melting Effects 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000541 cathodic arc deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002045 lasting effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 210000001519 tissue Anatomy 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 208000005374 Poisoning Diseases 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010921 in-depth analysis Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of combination field and the compound vacuum coating method of liner bias conical pipe, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: the devices such as grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias taper pipe device and grid bias power supply, movable coil device and power supply, Waveform Matching device, twin target high-power impulse magnetron sputtering target source and power supply；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply adjusting plasma, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.
Description
Technical field
The present invention relates to a kind of combination fields and the compound vacuum coating method of liner bias conical pipe, belong to material surface
Processing technology field.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect,
The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists
50W/cm2, the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits,
The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue
[J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university
Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I.
A novel pulsed magnetron sputter technique utilizing very high target power
Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes
Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width,
Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering
100 times, about 1000 ~ 3000W/cm2, the density of plasma reaches 1018m-3The order of magnitude, central region ion concentration
Up to 1019m-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level
Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home
Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique
[D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high
The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao
East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics
Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable,
And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface
The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc
The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control
The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public
The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill
The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation
It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity
The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C,
Cavaleiro A. Effect of peak target power on the properties of Cr thin films
sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode
[J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode
Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation
Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao
J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films
deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257
(13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied
Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter
Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M,
Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a
filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges
and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth
International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters
Bias improves the efficiency of transmission of plasma.
It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity
Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect
Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary
Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J.,
J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through
Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and
Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G.
TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3):
424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter
Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.
Summary of the invention
The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target
The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side
Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin
Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity
Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum
Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device
The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point
Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control
The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from
Daughter, what constraint and biasing electric field in conjunction with multi-stage magnetic field filter method and liner bias taper pipe device own form attracted answers
Cooperation is used to eliminate the bulky grain defect contained in arc-plasma, while guaranteeing that arc-plasma is imitated with higher transmission
Rate by liner bias taper pipe device and multi-stage magnetic field filter device, recycle movable coil device magnetically confined and itself
The compound action that biasing electric field attracts eliminates the electric arc for transmitting out from multi-stage magnetic field device and liner bias taper pipe device
The bulky grain defect contained in plasma, at the same using movable coil device control twin target high-power impulse magnetron sputtering and
The transmission direction of the compound plasma of arc ion plating in a vacuum chamber is realized to substrate work-piece table in any position in vacuum chamber
The control and regulation of the film deposition and thin film composition in face, reduce compound plasma in the indoor loss of vacuum, overcome due to true
Film caused by empty room and target source position limitation or base shape limit deposits problem of non-uniform, thoroughly removes from multi-stage magnetic field
It is possible to remaining bulky grain defect out in the arc-plasma for transmitting in device and liner bias taper pipe device, makes work
Part surface adjusts ion energy in the case where applying back bias voltage, removes electric arc using the biasing electric field inhibiting effect of matrix surface
Bulky grain defect in plasma, the high-quality thin-film that preparation is continuous, fine and close, while realizing and target elements content in film is added
Add control, the efficiency of transmission for reducing the production cost using alloys target, improving plasma, increase the deposition velocity of film and subtract
It even is eliminated bulky grain defect less to the adverse effect of film microstructure, continuous compact deposits and service performance, proposes one
Kind combination field and the compound vacuum coating method of liner bias conical pipe.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), twin target
High-power impulse magnetron sputtering power supply (4), twin target high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion
(6), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil dress
Set (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source
(13), liner bias taper pipe device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias taper pipe device (14) is connecing liner grid bias power supply (15) just
Pole output end opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias taper pipe device (14) can cooperate multi-stage magnetic field device (12) to design 1 grade of conical pipe, 2 grades of conical pipes, 3 grades
The structure of conical pipe or 4 grades of conical pipes and inlet and outlet layout, the internal diameter of entrance conical pipeD IntoGreater than arc ion plating target source
(3) outer diameter, taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (12), pass through between every grade of conical pipe nonmagnetic
Rivet interlacement fix, convenient for dismantling assembling and cleaning pollutant, liner bias taper pipe device (14) and multi-stage magnetic field device
(12) activity insulation is assembled together between, and cleaning and installation can be dismantled in time with apparent surface pollution level, avoids no liner plate
The inside pipe wall pollution of multi-stage magnetic field device (12) and the problem of clearing up is difficult under state, and to more after effectively target being avoided to replace
The secondary sputtering of grade magnetic field device inner wall surface pollutant causes the pollution of thin film composition；Liner bias taper pipe device (14)
Total lengthHIt is identical with the length of multi-stage magnetic field device (12), liner bias conical pipe is selected according to different targets and technological parameter
The allocation plan of device (14) realizes the elimination effect realized using the mechanical masking effect of own form constraint to bulky grain；
Multi-stage magnetic field device (12) and the material of liner bias taper pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias taper pipe device (14) is according to multi-stage magnetic field device (12) internal diameter and arc ion plating target source
(3) outer diameter determines the outer diameter and inner diameter of conical pipe at inlet and outlet position, needs to select further according to length and rigidity suitable thick
Degree is processed according to actual design parameter；
It opens liner grid bias power supply (15), liner bias taper pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias taper pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias conical pipe
The probability of device (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias taper pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with compared with
High efficiency of transmission reaches matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by person's base shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is right
Bulky grain defect in arc-plasma is filtered elimination, guarantees the uniformity of target ablation, and that improves target utilizes effect
Rate overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound plasma with higher
Efficiency of transmission by movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc etc. from
Daughter and twin target high-power impulse magnetron sputtering plasma reach any position or sample stage (12) in vacuum chamber (13)
The matrix surface of upper arbitrary shape, coil turn, coil-span, shape and transmission path of movable coil device (9) etc. are adjusted
It controls compound plasma, reduces loss of the compound plasma in vacuum chamber (13), remove in arc-plasma
Bulky grain defect carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes movable coil device
(9) the positive bias variation on, the electric field that positive bias generates may be implemented to electronics in arc-plasma and remaining bulky grain
Attract, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc plasma
Efficiency of transmission of the body in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low electricity
The copper tube of resistance, the number of turns, coil channel diameter, coil shape of diameter, thickness and the length of copper pipe according to movable coil device (9)
Shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil device
The positive and negative anodes of power supply (10) provide suitable electric current, electricity to movable coil device (9) according to magnetic field strength, direction and cooling system
The input range of stream is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic
, the path transmission for setting compound plasma according to movable coil device (9) guarantees to remove remaining bulky grain same
The efficiency of transmission of Shi Yigao reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the fast of film
Speed deposition；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is eliminated current using the bipolarity feature of twin target high-power impulse magnetron sputtering power supply
The problem of charge accumulated of high-power impulse magnetron sputtering electric discharge causes sparking and ion resorption, recycle arc ions electroplating method
Realize that high-melting-point difficulty ionization target generates the plasma of continual and steady, high ionization level, twin target high-power impulse magnetron sputtering
Technology realizes the higher metallic ionization level of target by high pressure low-frequency pulse, does not need other auxiliary ionization devices, right
In pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as the graphite of low melting point
Do not generate bulky grain defect with semiconductor material Si), can also use two different unit targets or unit and it is polynary, with
And the combination such as two kinds of multicomponent target materials, realize that the plasma of multiple elements design generates, and then various units, polynary and change can be deposited
The film of polymer type and different element ratios；B. arc ion plating target source can make up high-power impulse magnetron sputtering target source
Discharge instability and high-melting-point target be difficult to the limitation of ionization, guarantee that the high density of depositing ions persistently generates；C. due to adopting
With synchronous waveform coalignment, matrix can be made effectively to attract caused by twin target high-power impulse magnetron sputtering target source
Ion reduces high-power impulse magnetron sputtering technology to the resorption effect of produced ion, ensure that film deposition rate, make to sink
The energy of product ion greatly improves；D. by adjusting the technological parameter in twin target high-power impulse magnetron sputtering target source, in conjunction with electricity
The technological parameter in arc ion plating target source, may be implemented the ion ratio of various elements in compound plasma, realizes different elements
The film of ratio deposits；E. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, be utilized
Amplitude, pulse width and the frequency of pulsed bias realize the pinning effect that energetic ion grows film, improve film growth
Texture and stress state, improving film substrate bond strength improves the service performance of film；F. due to eliminating the pure of low melting point
Metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material
Si) the application limitation in arc ion plating, avoids the bulky grain defect of low melting point element, original multi-element film may be implemented
The addition of these elements and ratio are adjusted flexibly in preparation process, and prepared film crystal tissue is finer and close, Ke Yijin
The mechanical property of one step raising film；G. it is laid out using the shape of movable coil device and magnetic field magnetic line, the cooperation in direction,
Movable coil can be using 90 degree of classical flexure types, can also be using straight line and bending, bending and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part it is tangent, intersect), straight line and the Straight Combination (magnetic line of force phase of two sections of straight line portions
Hand over), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the combination (three of circular arc, straight line and circular arc
Between tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission road
The needs of diameter are determined, and realize effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner
The further removing of remaining bulky grain defect in bias taper pipe device overcomes the electric discharge of high-power impulse magnetron sputtering technology
Unstable and ion resorption problem, reduces loss of the compound plasma in vacuum chamber transmission process, passes through movable coil
The guidance in magnetic field further increases the efficiency of transmission of compound plasma and the deposition velocity of film, overcomes due to vacuum chamber sky
Between and target source layout design caused by deposition position limitation or base shape limit caused by film deposit problem of non-uniform, can
To realize the preparation of film in the optimum position of vacuum chamber, the series electrical of movable coil can also be adjusted by rheostat device
Resistance value realizes the adjustment to movable coil itself positive bias parameter, realizes to the electronics and big of remnants in arc-plasma
The attraction of grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining bulky grain defect, increase thin
The deposition velocity of film；H. multi-stage magnetic field filter device can guarantee that electric arc is transported in stablizing for target material surface by the constraint in magnetic field
It is dynamic, lasting arc-plasma is generated, and make arc-plasma in multi-stage magnetic field device by the magnetic line of force of multi-stage magnetic field
In high efficiency of transmission, also change arc-plasma and the motion path of bulky grain defect are come the separation both realized, further
Decrease or even eliminate the bulky grain defect in arc-plasma；I. liner bias taper pipe device by can apply direct current,
Pulse or the compound positive bias of DC pulse continue to bulky grain or periodically effectively attract, carry out to depositing ions
Continue or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduces plasma and transmitted in pipe
Loss in the process further increases the efficiency of transmission of arc-plasma and the deposition velocity of film；J. liner bias taper
Pipe device determines the outer diameter and inner diameter of conical pipe according to the internal diameter of multi-stage magnetic field device and the outer diameter in arc ion plating target source, according to
Length and rigidity need to select suitable thickness, pass through the fortune for the mechanical masking effect limitation bulky grain defect that own form constrains
It realizes to eliminate the bulky grain defect in arc-plasma to bulky grain removal of defect effect, liner bias cone in dynamic path
Shape pipe device is flexibly dismantled, and cleaning is convenient, avoids asking for the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status
Topic, it is possible to prevente effectively from different targets cause film to the secondary sputtering of multi-stage magnetic field device wall polluting object after target replacement
The pollution of ingredient；K. pulsed bias power supply utilizes electricity by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
The inhibition repelling effect of field, which is realized, eliminate to remaining bulky grain defect and optimize to the adjusting of compound plasma energy；
L. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, using the type of pulsed bias,
Amplitude, pulse width and frequency realize the pinning effect that energetic ion grow film, improve the texture of film growth with
Stress state improves bond strength, improves the service performance of film；M. by utilizing a kind of combination field and liner bias taper
Film prepared by compound vacuum coating method is managed, the bulky grain defect in film is eliminated, reduces compound plasma
Loss in filter device and vacuum chamber improves the service efficiency of compound plasma, realizes the quick preparation of film, and
It can guarantee that film crystal tissue and microstructure are finer and close, be conducive to the service performance for further increasing film.
A kind of combination field and the compound vacuum coating method of liner bias conical pipe, the device can singly be covered or be covered more
Combination, and combine the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias taper pipe device
(14) it is combined with the multiple types of movable coil device (9), realizes the Optimized Matching, multi-stage magnetic field and movable coil of different wave
The transmission path in magnetic field guides, and the compound of pure metal film, different element ratios is prepared in the indoor any position of vacuum
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure can also cover using single set or mostly the device simultaneously
In conjunction with one or two kinds of using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc
Above method combination, then Dc bias, pulsed bias or the compound bias of DC pulse are used, it is two or more heavy to realize
The compound of product mode carries out film deposition, and it is thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the 1st kind of dress of a kind of combination field of the present invention and the compound vacuum coating method of liner bias conical pipe
With schematic diagram；Fig. 2 is the 2nd kind of assembly letter of a kind of combination field of the present invention and the compound vacuum coating method of liner bias conical pipe
Figure；Fig. 3 is 6 kinds of topology layouts of movable coil in the 1st kind of scheme of erection；Fig. 4 is 7 of movable coil in the 2nd kind of scheme of erection
Kind topology layout；Fig. 5 is the typical structure schematic diagram of liner bias taper pipe device；Fig. 6 is synchronous waveform coalignment, twin target
High-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering monopole
Property single pulse waveforms integral multiples, out of phase and different pulse widths matching figure.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-6, a kind of combination field of present embodiment with it is interior
Serving as a contrast the compound vacuum coating method institute use device of bias conical pipe includes grid bias power supply (1), arc power (2), arc ion plating
Target source (3), twin target high-power impulse magnetron sputtering power supply (4), twin target high-power impulse magnetron sputtering target source (5), bias
Power supply wave shape oscillograph (6), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment
(8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multistage
Magnetic field device power supply (13), liner bias taper pipe device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber
(17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias taper pipe device (14) is connecing liner grid bias power supply (15) just
Pole output end opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias taper pipe device (14) can cooperate multi-stage magnetic field device (12) to design 1 grade of conical pipe, 2 grades of conical pipes, 3 grades
The structure of conical pipe or 4 grades of conical pipes and inlet and outlet layout, the internal diameter of entrance conical pipeD IntoGreater than arc ion plating target source
(3) outer diameter, taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (12), pass through between every grade of conical pipe nonmagnetic
Rivet interlacement fix, convenient for dismantling assembling and cleaning pollutant, liner bias taper pipe device (14) and multi-stage magnetic field device
(12) activity insulation is assembled together between, and cleaning and installation can be dismantled in time with apparent surface pollution level, avoids no liner plate
The inside pipe wall pollution of multi-stage magnetic field device (12) and the problem of clearing up is difficult under state, and to more after effectively target being avoided to replace
The secondary sputtering of grade magnetic field device inner wall surface pollutant causes the pollution of thin film composition；Liner bias taper pipe device (14)
Total lengthHIt is identical with the length of multi-stage magnetic field device (12), liner bias conical pipe is selected according to different targets and technological parameter
The allocation plan of device (14) realizes the elimination effect realized using the mechanical masking effect of own form constraint to bulky grain
(as shown in Figure 5)；
Multi-stage magnetic field device (12) and the material of liner bias taper pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias taper pipe device (14) is according to multi-stage magnetic field device (12) internal diameter and arc ion plating target source
(3) outer diameter determines the outer diameter and inner diameter of conical pipe at inlet and outlet position, needs to select further according to length and rigidity suitable thick
Degree is processed according to actual design parameter；
It opens liner grid bias power supply (15), liner bias taper pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias taper pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias conical pipe
The probability of device (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias taper pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined (as illustrated in fig. 1 and 2) according to the needs of spatial position and transmission path, is realized and bulky grain defect
Separation makes it reach matrix surface with higher efficiency of transmission, overcomes caused by being designed due to vacuum chamber space and target source layout
Film caused by deposition position limitation or base shape limit deposits problem of non-uniform, carries out the fast deposition of film, multistage
Magnetic field device (12) and liner bias taper pipe device (14) are filtered elimination to the bulky grain defect in arc-plasma,
The uniformity for guaranteeing target ablation, improves the utilization efficiency of target, and it is unstable to overcome the electric discharge of high-power impulse magnetron sputtering technology
Fixed and ion resorption problem makes compound plasma pass through movable coil device (9) with higher efficiency of transmission, while realization pair
The adjusting of magnetic direction and magnetic field strength, pilot arc plasma and twin target high-power impulse magnetron sputtering plasma arrive
Up to any position in vacuum chamber (13) or the matrix surface of arbitrary shape on sample stage (12), the line of movable coil device (9)
The adjustings such as the number of turns, coil-span, shape and transmission path are enclosed to control compound plasma, reduce compound plasma in vacuum
Loss in room (13) removes the bulky grain defect in arc-plasma, carries out the fast deposition of film；Standardsizing rheostat dress
It sets the output resistance of (11), realizes the positive bias variation on movable coil device (9), the electric field that positive bias generates may be implemented pair
The attraction of electronics and remaining bulky grain in arc-plasma, so increase electric arc exported in movable coil device (9) etc. from
The ion populations of daughter increase, and promote efficiency of transmission of the arc-plasma in movable coil device (9), eliminate the big of remnants
Grain defect；Movable coil device (9) selects low-resistance copper tube, and diameter, thickness and the length of copper pipe are according to movable coil
The transmission of the number of turns, coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, compound plasma of device (9)
Path and transmission range determine；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction and cooling system
Suitable electric current is provided to movable coil device (9), the input range of electric current is 0 ~ 2000A, guarantees the steady of entire vacuum system
Qualitative and movable coil device (9) export suitable magnetic field, the road for setting compound plasma according to movable coil device (9)
Diameter transmission guarantees to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoids composite plasma
Body loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and
Nonmetallic materials (such as graphite), twin target high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as
Aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si), it can make
With single target, multiple targets or composition target, carry out pure metal film, the compound ceramic film of different element ratios, function film,
Multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
A kind of combination field and the compound vacuum coating method of liner bias conical pipe, make full use of twin target high power arteries and veins
Rush magnetron sputtering power supply bipolarity feature eliminate the electric discharge of current high-power impulse magnetron sputtering charge accumulated cause sparking and
The problem of ion resorption, recycles arc ions electroplating method to realize that high-melting-point difficulty ionization target generates continual and steady, high ionization level
Plasma, twin target high-power impulse magnetron sputtering technology by high pressure low-frequency pulse realize the higher metallic of target
Ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) or multicomponent alloy material of low melting point
(such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect, can also use
The combination such as two different unit targets or unit and polynary and two kinds of multicomponent target materials, realizes the plasma of multiple elements design
Body generates, and then can deposit the film of various units, polynary and type of compounds and different element ratios；Waveform is utilized simultaneously
Simultaneously match device controls applied back bias voltage and twin target high-power impulse magnetron sputtering technological parameter on workpiece, is conducive to change
The Potential Distributing in kind twin target high-power impulse magnetron sputtering target source plasma section, sufficiently attracts twin target high power pulse
For the ion that magnetron sputtering generates to workpiece motion s, effectively solving high-power impulse magnetron sputtering intermediate ion resorption effect leads to film
The low problem of deposition efficiency；Stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously,
The defect for making up high-power impulse magnetron sputtering technology discharge instability is conducive to high ionization level ion in the chemistry of workpiece surface
Synthetic reaction prepares the compound ceramic films of different element ratios, function film, multi-component multi-layer, superlattices and has gradient
The film or pure metal film of structure.Utilize the cooperation of shape and the magnetic field magnetic line layout, direction of movable coil device, activity
Coil can be using 90 degree of classical flexure types, can also be using straight line and bending, bending and the Straight Combination (magnetic of straight line portion
The line of force and the magnetic line of force of bending part are tangent, intersect), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), directly
The combination (three sections intersection and tangent combination) of line, circular arc and straight line and the combination of circular arc, straight line and circular arc (phase between three
Cut and intersect) etc. typical loop construction combination, circular arc and straight line portion therein are according to the need of spatial position and transmission path
It is determined, realizes to the effective of arc-plasma and twin target high-power impulse magnetron sputtering Plasma Transport path
Control, to bulky grain remaining from the arc-plasma for transmitting out in multi-stage magnetic field device and liner bias taper pipe device
Defect is purged, and overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, is reduced compound etc.
Loss of the gas ions in vacuum chamber transmission process further increases compound plasma by the guidance in movable coil magnetic field
Efficiency of transmission and film deposition velocity, overcome the limitation of deposition position caused by designing due to vacuum chamber space and target source layout
Or base shape limits caused film and deposits problem of non-uniform, can realize the system of film in the optimum position of vacuum chamber
It is standby, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil itself positive bias parameter
Adjustment, realize that Lai Tisheng arc-plasma is in activity to the attraction of electronics and remaining bulky grain in arc-plasma
Efficiency of transmission in coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Utilize multi-stage magnetic field filter device
By magnetically confined guarantee electric arc in the stable motion of target material surface, generate lasting arc-plasma, and pass through multistage
The magnetic line of force in magnetic field makes high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also changes arc-plasma and big
The motion path of grain defect is further reduced the bulky grain even being eliminated in arc-plasma and lacks come the separation both realized
It falls into；Apply direct current, pulse or the compound positive bias of DC pulse using liner bias taper pipe device, bulky grain is continued
Or periodically effectively attract, effectively avoid bulky grain problem caused by low melting material, to depositing ions carry out continue or
Periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduction plasma is in pipe in transmission process
Loss, further increase the efficiency of transmission of arc-plasma and the deposition velocity of film, liner bias taper pipe device root
The outer diameter and inner diameter that conical pipe is determined according to the internal diameter of multi-stage magnetic field device and the outer diameter in arc ion plating target source, according to length and just
Degree needs to select suitable thickness, and the mechanical masking effect constrained by own form limits the motion path of bulky grain defect,
It eliminates the bulky grain defect in arc-plasma, realizes to bulky grain removal of defect effect, liner bias conical pipe dress
Set flexible disassembly, cleaning is convenient, the problem of avoiding the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, can be with
After effectively avoiding target from replacing, different targets cause the dirt of thin film composition to the secondary sputtering of multi-stage magnetic field device wall polluting object
Dye；Pulsed bias power supply is arranged by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency using the inhibition of electric field
Reprimand effect, which is realized, eliminate to remaining bulky grain defect and optimize to the adjusting of compound plasma energy, and it is attached to improve matrix
The section Potential Distributing of nearly plasma, sufficiently attracts compound plasma to workpiece motion s, realizes the fast deposition of film；Institute
The microstructure and properties for preparing film can be adjusted by pulsed bias parameter, using the type of pulsed bias, amplitude,
Pulse width and frequency realize the pinning effect that energetic ion grows film, improve the texture and stress shape of film growth
State improves bond strength, improves the service performance of film；Simultaneously also using arc ion plating (aip) generation stablize continue, from
The high metallic plasma of rate is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares different elements
The compound ceramic film of ratio, function film, multi-component multi-layer, superlattices and film with gradient-structure or pure metal are thin
Film；By eliminating using film prepared by a kind of combination field and the compound vacuum coating method of liner bias conical pipe
Bulky grain defect in film reduces loss of the compound plasma in filter device and vacuum chamber, avoids different targets
Pollution of the inner lining apparatus surface residues to film, improves the service efficiency of compound plasma caused by material is replaced, and realizes
The quick preparation of film is optimized the Energy distribution of compound plasma using pulsed bias, and can guarantee film crystal group
It knits finer and close with microstructure, is conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
Pulsed magnetron sputtering power supply (4) exports the integral multiple for the period of pulse pulse being exported for grid bias power supply (1), as shown in fig. 6, twin
The pulse period of target high-power impulse magnetron sputtering power supply (4) output is 8 times of the pulse period of grid bias power supply (1) output, work
The adjustment of skill parameter, carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin
Film, other are identical as embodiment one.
Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
The bias pulse waveform phase of pulsed magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output is adjustable, such as schemes
Shown in 6, in same pulse width, different phase differences allows two power supply output pulse waveforms to be all overlapped, partially overlap
Or be not overlapped, so that according to the Proper Match of two power pulses of process choice of film deposition, technical arrangement plan is carried out thin
Film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment one
It is identical.
Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
The pulse width of pulsed magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output pulse is independently adjustable, such as schemes
Shown in 6, different pulse widths make that the output pulse waveform of two power supplys can cover the latter with the former, the latter covers the former or
It is completely coincident, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio
Multilayer films, other are identical as embodiment one.
Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step
Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or
Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece
Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and
High-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, can first use twin target high-power impulse magnetron sputtering in step 2
The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix
Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure
With the multilayer films of element ratio, other are identical as embodiment two.
Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, can first use twin target high-power impulse magnetron sputtering in step 2
The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix
Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure
With the multilayer films of element ratio, other are identical as embodiment three.
Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, can first use twin target high-power impulse magnetron sputtering in step 2
The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix
Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure
With the multilayer films of element ratio, other are identical as embodiment four.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
It is unipolarity multiple-pulse that pulsed magnetron sputtering power supply (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different arteries and veins
The matching of width is rushed, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress, microcosmic knot
The multilayer films of structure and element ratio, other are identical as embodiment one.
Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
It is unipolarity single hop depth oscillating impulse that pulsed magnetron sputtering power supply (4), which exports pulse, then exports arteries and veins with the period for grid bias power supply (1)
The cooperation of punching, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and
The matching of different pulse widths carries out film deposition as shown in fig. 6, technical arrangement plan, preparation have different stress,
The multilayer films of microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is unipolarity single hop depth oscillating impulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, wherein deep oscillation pulse voltage can be
Twin target high-power impulse magnetron sputtering power supply (4) work starting is opened, and advantageously reduces the electric discharge of sparking plasma not
Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied
The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with stage pulse
It is identical, it also can choose difference, the deep oscillating impulse stage also can take up the entire pulse period, form deep oscillation pulse voltage mould
Formula, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and twin target high power pulse magnetic control
The matching of impulse waveform integral multiple, out of phase and different pulse widths is sputtered, as shown in fig. 6, technical arrangement plan, carries out thin
Film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment one
It is identical.
Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
Rate pulsed magnetron sputtering power supply (4) export pulse be unipolarity multistage depth oscillating impulse, then with the period be grid bias power supply (1) export
The cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase
With the matching of different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress shapes
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is unipolarity multistage depth oscillating impulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse bias can be
Twin target high-power impulse magnetron sputtering power supply (4) work starting is opened, and advantageously reduces the electric discharge of sparking plasma not
Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied
The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of each section of deep oscillation pulse voltage can be with pulse
Stage is identical, also can choose difference, can also use same or different deep oscillation pulse voltage amplitude between each other, deep
The amplitude of oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period be grid bias power supply
(1) cooperation of pulse is exported, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, no
The matching of same-phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation is answered with difference
The multilayer films of power state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is bipolarity pulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, and wherein the whole voltage magnitude of ending phase, is conducive to drop
The accumulation of low target surface potential, eliminates spark phenomenon, goes on smoothly the electric discharge of next pulse, then with the period is grid bias power supply (1)
Export the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, difference
The matching of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum coating method connection of bias conical pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, twin target high power
It is bipolarity multiple-pulse that pulsed magnetron sputtering power supply (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different arteries and veins
The matching of width is rushed, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress, microcosmic knot
The multilayer films of structure and element ratio, other are identical as embodiment one.
Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
Rate pulsed magnetron sputtering power supply (4) export pulse be bipolarity monopole single hop depth oscillating impulse, then with the period be grid bias power supply (1)
Export the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, difference
The matching of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is bipolarity monopole single hop depth oscillating impulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse bias can
It is opened with working to start in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduces sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust
For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse
There is deep oscillating impulse in stage, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with it is twin
The matching of target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, work
The adjustment of skill parameter, carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin
Film, other are identical as embodiment one.
Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
Rate pulsed magnetron sputtering power supply (4) export pulse be bipolarity monopole multistage depth oscillating impulse, then with the period be grid bias power supply (1)
Export the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, difference
The matching of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is bipolarity monopole multistage depth oscillating impulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse bias can
It is opened with working to start in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduces sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with pulse
Stage is identical, also can choose difference, and the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang
Amplitude deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
Rate pulsed magnetron sputtering power supply (4) export pulse be bipolarity the two poles of the earth single hop depth oscillating impulse, then with the period be grid bias power supply (1)
Export the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, difference
The matching of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum coating method connection of liner bias conical pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4), twin target Gao Gong
It is bipolarity the two poles of the earth single hop depth oscillating impulse that rate pulsed magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse bias can
It is opened with working to start in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduces sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with pulse
Stage is identical, also can choose difference, and the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang
Amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and twin target high power pulse magnetic
The matching of control sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out
Film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment
One is identical.
Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with liner bias conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, and twin target is high
Power Impulse Magnetron shielding power supply (4) export pulse be bipolarity the two poles of the earth multistage depth oscillating impulse, then with the period be grid bias power supply
(1) cooperation of pulse is exported, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, no
The matching of same-phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation is answered with difference
The multilayer films of power state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with liner bias conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, and twin target is high
It is bipolarity the two poles of the earth multistage depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias
It can work to start in twin target high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce sparking plasma and put
The adverse effect of electricity can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also
To open in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with arteries and veins
It is identical to rush the stage, also can choose difference, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, can also select
Difference is selected, same or different deep oscillation pulse voltage amplitude, the width of deep oscillation pulse voltage can also be used between each other
Value can also be adjusted to different or phasic Chang amplitude, then be the cooperation of grid bias power supply (1) output pulse with the period, partially
Voltage source impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Matching carry out film deposition as shown in fig. 6, technical arrangement plan, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment one.
Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with liner bias conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias taper pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) are opened simultaneously, and twin target is high
It is unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop oscillation arteries and veins deeply that Power Impulse Magnetron shielding power supply (4), which exports pulse,
It is punching, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, double
The work of polarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage depth oscillating impulse
The two or more combination of operation mode, then with the period be grid bias power supply (1) export pulse cooperation, grid bias power supply pulse
The matching of waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as
Shown in Fig. 6, technical arrangement plan carries out film deposition, and preparing has the more of different stress, microstructure and element ratio
Layer structural membrane, other are identical as embodiment one.
Claims (5)
1. a kind of combination field and the compound vacuum coating method of liner bias conical pipe, which is characterized in that the device includes inclined
Voltage source (1), arc power (2), arc ion plating target source (3), twin target high-power impulse magnetron sputtering power supply (4), twin target
High-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), twin target high-power impulse magnetron sputtering power supply
Kymographion (7), synchronous waveform coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat
Device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias taper pipe device (14), liner are inclined
Voltage source (15), sample stage (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias taper pipe device (14) is connecing liner grid bias power supply (15) just
Pole output end opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias taper pipe device (14) can cooperate multi-stage magnetic field device (12) to design 1 grade of conical pipe, 2 grades of conical pipes, 3 grades
The structure of conical pipe or 4 grades of conical pipes and inlet and outlet layout, the internal diameter of entrance conical pipeD IntoGreater than arc ion plating target source
(3) outer diameter, taper pipe outside diameters at different levels are both less than the internal diameter of multi-stage magnetic field device (12), pass through between every grade of conical pipe nonmagnetic
Rivet interlacement fix, convenient for dismantling assembling and cleaning pollutant, liner bias taper pipe device (14) and multi-stage magnetic field device
(12) activity insulation is assembled together between, and cleaning and installation can be dismantled in time with apparent surface pollution level, avoids no liner plate
The inside pipe wall pollution of multi-stage magnetic field device (12) and the problem of clearing up is difficult under state, and to more after effectively target being avoided to replace
The secondary sputtering of grade magnetic field device inner wall surface pollutant causes the pollution of thin film composition；Liner bias taper pipe device (14)
Total lengthHIt is identical with the length of multi-stage magnetic field device (12), liner bias conical pipe is selected according to different targets and technological parameter
The allocation plan of device (14) realizes the elimination effect realized using the mechanical masking effect of own form constraint to bulky grain；
Multi-stage magnetic field device (12) and the material of liner bias taper pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias taper pipe device (14) is according to multi-stage magnetic field device (12) internal diameter and arc ion plating target source
(3) outer diameter determines the outer diameter and inner diameter of conical pipe at inlet and outlet position, needs to select further according to length and rigidity suitable thick
Degree is processed according to actual design parameter；
It opens liner grid bias power supply (15), liner bias taper pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias taper pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias conical pipe
The probability of device (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias taper pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with compared with
High efficiency of transmission reaches matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by person's base shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is right
Bulky grain defect in arc-plasma is filtered elimination, guarantees the uniformity of target ablation, and that improves target utilizes effect
Rate overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound plasma with higher
Efficiency of transmission by movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc etc. from
Daughter and twin target high-power impulse magnetron sputtering plasma reach any position or sample stage (12) in vacuum chamber (13)
The matrix surface of upper arbitrary shape, coil turn, coil-span, shape and transmission path of movable coil device (9) etc. are adjusted
It controls compound plasma, reduces loss of the compound plasma in vacuum chamber (13), remove in arc-plasma
Bulky grain defect carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes movable coil device
(9) the positive bias variation on, the electric field that positive bias generates may be implemented to electronics in arc-plasma and remaining bulky grain
Attract, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc plasma
Efficiency of transmission of the body in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low electricity
The copper tube of resistance, the number of turns, coil channel diameter, coil shape of diameter, thickness and the length of copper pipe according to movable coil device (9)
Shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil device
The positive and negative anodes of power supply (10) provide suitable electric current, electricity to movable coil device (9) according to magnetic field strength, direction and cooling system
The input range of stream is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic
, the path transmission for setting compound plasma according to movable coil device (9) guarantees to remove remaining bulky grain same
The efficiency of transmission of Shi Yigao reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the fast of film
Speed deposition；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
2. a kind of combination field according to claim 1 and the compound vacuum coating method of liner bias conical pipe, special
Sign is that institute's use device further includes the pulse voltage and electricity that grid bias power supply kymographion (6) show that grid bias power supply (1) issues
Waveform is flowed, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) shows twin target high-power impulse magnetron sputtering
The impulse waveform of power supply (4) output is controlled grid bias power supply kymographion (6) and twin by synchronous waveform coalignment (8)
Target high-power impulse magnetron sputtering power supply (4) makes grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
Waveform adjusts the output waveform of grid bias power supply (1) according to integral multiple, the matching of out of phase and different pulse width, to from one
The plated film ion transmitted in the kind combination field vacuum coating method compound with liner bias conical pipe is effectively attracted,
To transmission in multi-stage magnetic field device (12), liner bias taper pipe device (14) and movable coil device (9) come out electric arc etc. from
Bulky grain in daughter carries out electric field inhibition, in the ratio of matrix surface deposition film and control deposition targets element in the film
Example realizes the adjusting of plasma energy and is possible to remaining bulky grain defect progress electric field repulsion removing.
3. a kind of combination field according to claim 1 and the compound vacuum coating method of liner bias conical pipe, special
Sign is that the device combines the waveform control of synchronous waveform coalignment (8), active line using single set or more set combinations
The multiple types of coil apparatus (9), multi-stage magnetic field device (12) and liner bias taper pipe device (14) combine, and realize different wave
Optimized Matching, multi-stage magnetic field, liner bias taper pipe device and the transmission path in movable coil magnetic field guidance, in vacuum chamber
Any position prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer more
The film of layer or gradient-structure.
4. a kind of combination field according to claim 1 and the compound vacuum coating method of liner bias conical pipe, special
Sign is, the pulsed bias of magnetron sputtering combination high voltage is first carried out using twin target high-power impulse magnetron sputtering power supply (4)
Power supply carries out ion implantation and deposition, improves the binding force of film and matrix, then is covered using list or covered the device more and combined and adopted
With Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc it is one or two kinds of more than
Method combination, then apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two kinds or two
Kind or more the compound of depositional mode carry out film deposition, to prepare the compound ceramic of pure metal film, different element ratios
Film, function film and the film with nanometer multilayer or gradient-structure.
5. a kind of combination field according to claim 1 and the compound vacuum coating method of liner bias conical pipe, special
Sign is that it is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer
Or the film of gradient-structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711491566.9A CN109989021A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and the compound vacuum coating method of liner bias conical pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711491566.9A CN109989021A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and the compound vacuum coating method of liner bias conical pipe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109989021A true CN109989021A (en) | 2019-07-09 |
Family
ID=67110056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711491566.9A Pending CN109989021A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and the compound vacuum coating method of liner bias conical pipe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109989021A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117972314A (en) * | 2024-03-29 | 2024-05-03 | 山东华立供水设备有限公司 | Cloud platform monitoring method and system based on digital twinning |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
| CN104947046A (en) * | 2015-07-28 | 2015-09-30 | 魏永强 | Multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method |
| CN105088150A (en) * | 2015-09-10 | 2015-11-25 | 魏永强 | Multilevel magnetic field arc ion plating method with adjustable transmission directions |
| CN105908135A (en) * | 2016-05-09 | 2016-08-31 | 魏永强 | Multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method |
| CN106637098A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Multi-grade magnetic field electric arc ion plating method of lining positive-biased tapered pipe |
-
2017
- 2017-12-30 CN CN201711491566.9A patent/CN109989021A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
| CN104947046A (en) * | 2015-07-28 | 2015-09-30 | 魏永强 | Multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method |
| CN105088150A (en) * | 2015-09-10 | 2015-11-25 | 魏永强 | Multilevel magnetic field arc ion plating method with adjustable transmission directions |
| CN105908135A (en) * | 2016-05-09 | 2016-08-31 | 魏永强 | Multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method |
| CN106637098A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Multi-grade magnetic field electric arc ion plating method of lining positive-biased tapered pipe |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117972314A (en) * | 2024-03-29 | 2024-05-03 | 山东华立供水设备有限公司 | Cloud platform monitoring method and system based on digital twinning |
| CN117972314B (en) * | 2024-03-29 | 2024-06-04 | 山东华立供水设备有限公司 | Cloud platform monitoring method and system based on digital twinning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106637097B (en) | Liner conical pipe and the compound multi-stage magnetic field arc ions electroplating method of perforated baffle | |
| CN106756823B (en) | Liner positive bias conical pipe and the compound multi-stage magnetic field arc ions electroplating method of straight tube | |
| CN106676482A (en) | Lining step tube and porous baffle composite type multi-level magnetic field arc ion plating method | |
| CN106756824B (en) | The multi-stage magnetic field arc ions electroplating method of liner positive bias stairstepping pipe | |
| CN106637098B (en) | The multi-stage magnetic field arc ions electroplating method of liner positive bias conical pipe | |
| CN206616266U (en) | The liner straight tube and perforated baffle hybrid device of multi-stage magnetic field arc ion plating | |
| CN206553622U (en) | The liner positive bias taper pipe device of multi-stage magnetic field arc ion plating | |
| CN109989016A (en) | A kind of combination field, compound tube and the compound vacuum coating method of perforated baffle | |
| CN106637096A (en) | Lining positive bias porous baffle multi-level magnetic field arc ion plating method | |
| CN109989021A (en) | A kind of combination field and the compound vacuum coating method of liner bias conical pipe | |
| CN109989042A (en) | A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe | |
| CN109989015A (en) | A kind of combination field and the compound vacuum deposition method of liner bias conical pipe | |
| CN109989011A (en) | A kind of combination field and liner special pipe and the compound vacuum deposition method of perforated baffle | |
| CN109989009A (en) | Combination field arc ion plating and high-power impulse magnetron sputtering composite deposition method | |
| CN109989018A (en) | A kind of combination field and the compound vacuum coating method of liner bias ladder pipe | |
| CN109989037A (en) | A kind of combination field and the compound vacuum coating method of liner perforated baffle | |
| CN109989036A (en) | A kind of combination field and liner special pipe and the compound vacuum coating method of perforated baffle | |
| CN109989023A (en) | A kind of vacuum coating method that combination field is compound with liner bias conical pipe and straight tube | |
| CN109989022A (en) | The arc ion plating of combination field and liner conical pipe and straight tube composite filter | |
| CN109989040A (en) | A kind of combination field and liner conical pipe and the compound vacuum deposition method of ladder pipe | |
| CN109989003A (en) | The arc ion plating of combination field and liner bias perforated baffle composite filter | |
| CN109989033A (en) | A kind of vacuum deposition method that combination field is compound with liner bias conical pipe and straight tube | |
| CN109989032A (en) | A kind of combination field and the compound vacuum deposition method of liner perforated baffle | |
| CN109989013A (en) | A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe | |
| CN109989005A (en) | The arc ion plating of combination field and liner bias straight tube composite filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |