CN109989033A

CN109989033A - A kind of vacuum deposition method that combination field is compound with liner bias conical pipe and straight tube

Info

Publication number: CN109989033A
Application number: CN201711493113.XA
Authority: CN
Inventors: 魏永强; 王好平; 宗晓亚; 蒋志强
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-12-30
Filing date: 2017-12-30
Publication date: 2019-07-09

Abstract

A kind of vacuum deposition method that combination field is compound with liner bias conical pipe and straight tube, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: arc ion plating target source, multi-stage magnetic field device, liner bias conical pipe and straight tube combination unit, high-power impulse magnetron sputtering target source, movable coil device and line related, Waveform Matching device, grid bias power supply, sample stage and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10^‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and technological parameter is arranged.

Description

A kind of vacuum deposition method that combination field is compound with liner bias conical pipe and straight tube

Technical field

The present invention relates to the compound vacuum deposition methods of a kind of combination field and liner bias conical pipe and straight tube, belong to material Expect technical field of surface.

Background technique

During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 10¹⁰A/m², cause There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.). In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation With.

Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect, The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists 50W/cm², the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits, The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue [J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetron sputter technique utilizing very high target power Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width, Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering 100 times, about 1000 ~ 3000W/cm², the density of plasma reaches 10¹⁸m^-3The order of magnitude, central region ion concentration Up to 10¹⁹m^-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique [D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable, And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C, Cavaleiro A. Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode [J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.

Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 ° Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A, Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670- 674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders A, MacGill R A. Twist filter for the removal of macroparticles from cathodic Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257 (13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M, Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters Bias improves the efficiency of transmission of plasma.

It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J., J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G. TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3): 424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.

Summary of the invention

The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from Daughter, in conjunction with the constraint and bias plasma of multi-stage magnetic field filter method and liner bias conical pipe and straight tube combination unit own form The compound action attracted eliminates the bulky grain defect contained in arc-plasma, at the same guarantee arc-plasma with compared with High efficiency of transmission is by liner bias conical pipe and straight tube combines the unit and multi-stage magnetic field filter device, recycles movable coil Compound action that the magnetically confined of device and itself biasing electric field attract is eliminated from multi-stage magnetic field device and liner bias taper The bulky grain defect contained in the arc-plasma that pipe transmits out with straight tube combination unit, while utilizing movable coil device The transmission direction of the compound plasma of control high-power impulse magnetron sputtering and arc ion plating in a vacuum chamber, is realized to true The control and regulation of the film deposition and thin film composition on any position substrate work-piece surface, reduce compound plasma true in empty room Empty indoor loss overcomes film deposition caused by limiting due to vacuum chamber and target source position limitation or base shape uneven Problem, thoroughly remove electric arc for transmitting out from multi-stage magnetic field device and liner bias conical pipe and straight tube combination unit etc. from It is possible to remaining bulky grain defect in daughter, workpiece surface is made to adjust ion energy in the case where applying back bias voltage, utilizes The biasing electric field inhibiting effect of matrix surface removes the bulky grain defect in arc-plasma, and preparation is continuous, densification high-quality Film, while realizing and target elements content addition in film is controlled, reduce the production cost using alloys target, improve plasma The efficiency of transmission of body, the deposition velocity for increasing film and decrease or even eliminate bulky grain defect to film microstructure, continuous cause The adverse effect of close deposition and service performance proposes a kind of vacuum that combination field is compound with liner bias conical pipe and straight tube Deposition method.

Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe With straight tube combination unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16), Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source (5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively, One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port (10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction Fixed, liner bias conical pipe and straight tube combine the unit the cathode output end that (14) connect liner grid bias power supply (15), and it is total to open power supply Control switch and external water-cooling circulating system；

Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10^-4When Pa, it is passed through work Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；

It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6) Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4) Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output Shielding power supply (4) work；

It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；

It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13) Grade magnetic direction and intensity；

Liner bias conical pipe and straight tube combination unit (14) can cooperate multi-stage magnetic field device (12) to design 2 grades, 3 grades or 4 grades It is solid by non-magnetic rivet interlacement between conical pipes and straight tube or conical pipe at different levels etc. a variety of hierarchical structures and inlet and outlet layout Fixed, convenient for dismantling assembling and cleaning pollutant, liner bias conical pipe is interior with straight tube combination unit (14) inletD _IntoIt is greater than The outer diameter in arc ion plating target source (3), entire outer diameter are less than the internal diameter of multi-stage magnetic field device (12), the internal diameter in exitD _OutIn conjunction with Combination, technological parameter and target of device etc. determine that liner bias conical pipe and straight tube combination unit (14) and multi-stage magnetic field fill It sets activity insulation between (12) to be assembled together, liner bias conical pipe and straight tube combination unit (14) can pollute journey with apparent surface Degree disassembly cleaning in time and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (12) under linerless board status and are difficult to clear up The problem of, and effectively avoid target replace after to the secondary sputtering of multi-stage magnetic field device inner wall surface pollutant cause film at The pollution divided；The length of liner bias conical pipe and straight tube combination unit (14)HIt is identical with the length of multi-stage magnetic field device (12), According to the allocation plan of different targets and technological parameter selection liner bias conical pipe and straight tube combination unit (14), realizes and utilize Own form constrains the scavenging effect to bulky grain；

The material of multi-stage magnetic field device (12) and liner bias conical pipe and straight tube combination unit (14) selects nonmagnetic, resistance to cleaning 304 stainless steel materials, multi-stage magnetic field device (12) determines length, inside and outside according to the diameter of target, cooling, transmission range Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe and straight tube combination unit (14) are according in multi-stage magnetic field device (12) Diameter and the outer diameter in arc ion plating target source (3) determine that liner bias conical pipe and straight tube combination unit (14) import and export the outer of position Diameter and internal diameter, liner bias conical pipe and straight tube combination unit (14) need to select suitable thickness according to length and rigidity, press According to the facts border design parameter is processed；

It opens liner grid bias power supply (15), liner bias conical pipe and straight tube combination unit (14) keep direct current, pulse, more arteries and veins Punching, DC pulse is compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type are adjustable Pulse frequency, pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias conical pipe and straight tube combine the unit (14) bulky grain is attracted, depositing ions is repelled, reduce damage of the arc-plasma in pipe in transmission process Consumption reduces the bulky grain defect that even is eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma Deposition velocity, the voltage parameter of liner grid bias power supply (15) are -200 ~+200V, are direct current, pulse, multiple-pulse, direct current arteries and veins Compound or Bipolar pulse power is rushed, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, are depositing Periodical or continual and steady attraction is generated to bulky grain defect in the process, greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias conical pipe and straight tube combination unit (14) probability；

It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse, Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A, Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film； The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable, Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；

Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8) Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more The preparation of the high-quality thin-film of layer or gradient-structure；

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias conical pipe and straight tube combination unit (14) transmission, utilizes active line The cooperation of shape and the magnetic field magnetic line layout, direction of coil apparatus, movable coil can be using 90 degree of classical flexure types, can also To use straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), Straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and tangent of straight line, circular arc and straight line Combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), wherein Circular arc and straight line portion be determined according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, So that it is reached matrix surface with higher efficiency of transmission, overcomes and deposit position caused by designing due to vacuum chamber space and target source layout It sets limitation or base shape limits caused film deposition problem of non-uniform, carry out the fast deposition of film, multi-stage magnetic field dress It sets (12) and elimination is filtered to the bulky grain defect in arc-plasma, guarantee the uniformity of target ablation, improve target Utilization efficiency, overcome high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, make composite plasma Body passes through movable coil device (9) with higher efficiency of transmission, while realizing the adjusting to magnetic direction and magnetic field strength, guidance Arc-plasma and high-power impulse magnetron sputtering plasma reach any position or sample stage in vacuum chamber (13) (12) matrix surface of arbitrary shape on, coil turn, coil-span, shape and the transmission path etc. of movable coil device (9) It adjusts to control compound plasma, reduces loss of the compound plasma in vacuum chamber (13), remove arc-plasma In bulky grain defect, carry out the fast deposition of film；The output resistance of standardsizing rheostat device (11) realizes movable coil dress The positive bias variation on (9) is set, the electric field that positive bias generates may be implemented to electronics in arc-plasma and remaining bulky grain Attraction, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, promoted electric arc etc. from Efficiency of transmission of the daughter in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device (9) selection is low The copper tube of resistance, the diameter of copper pipe, the number of turns of thickness and length foundation movable coil device (9), coil channel diameter, coil Shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil dress The positive and negative anodes for setting power supply (10) provide suitable electric current to movable coil device (9) according to magnetic field strength, direction and cooling system, The input range of electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic , the path transmission for setting compound plasma according to movable coil device (9) guarantees to remove remaining bulky grain same The efficiency of transmission of Shi Yigao reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the fast of film Speed deposition；

Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress (9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.

According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.

Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b. Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path Effect control, to bulky grain defect remaining from multi-stage magnetic field device and liner bias conical pipe and straight tube combination unit into one Step is removed, and is overcome high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, is reduced composite plasma Loss of the body in vacuum chamber transmission process further increases the biography of compound plasma by the guidance in movable coil magnetic field The deposition velocity of defeated efficiency and film, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or Film caused by base shape limits deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, also The series impedance of movable coil can be adjusted by rheostat device, realize the tune to movable coil itself positive bias parameter It is whole, realize that Lai Tisheng arc-plasma is in movable coil to the attraction of electronics and remaining bulky grain in arc-plasma In efficiency of transmission, eliminate remaining bulky grain defect, increase the deposition velocity of film；H. multi-stage magnetic field filter device can lead to The constraint for crossing magnetic field guarantees that electric arc generates lasting arc-plasma in the stable motion of target material surface, and passes through multistage magnetic The magnetic line of force of field makes high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change arc-plasma and bulky grain The motion path of defect is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized； I. liner bias conical pipe and straight tube combination unit are right by that can apply direct current, pulse or the compound positive bias of DC pulse Bulky grain continue or periodically effectively attracts, continue to depositing ions or periodically repel, and can also pass through The bipolar pulse oscillation of positive back bias voltage, reduces loss of the plasma in pipe in transmission process, further increases electric arc etc. The efficiency of transmission of gas ions and the deposition velocity of film；J. liner bias conical pipe and straight tube combination unit can pass through itself Shape realizes the mechanical stop screen to bulky grain defect using the variation of the multiple combinations and internal diameter outer diameter of multi-stage taper pipe and straight tube Effect is covered, limits the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma, liner bias taper The flexible disassembly of pipe and straight tube combination unit, cleaning is convenient, it is possible to prevente effectively from polluting after target replacement to liner apparatus surface The secondary sputtering of object causes the pollution of thin film composition；K. pulsed bias power supply is wide by adjusting pulse pattern, pulse amplitude, pulse Degree and pulse frequency, using electric field inhibition repelling effect realize to remaining bulky grain defect carry out eliminate and to it is compound etc. from The adjusting of daughter energy optimizes；L. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, The pinning effect that energetic ion grows film is realized using the type of pulsed bias, amplitude, pulse width and frequency, is improved thin The texture and stress state of film growth, improve bond strength, improve the service performance of film；M. by utilizing a kind of combination Film prepared by the vacuum deposition method compound with liner bias conical pipe and straight tube of magnetic field, eliminates the bulky grain in film Defect reduces loss of the compound plasma in filter device and vacuum chamber, improves the use effect of compound plasma Rate, realizes the quick preparation of film, and can guarantee that film crystal tissue and microstructure are finer and close, is conducive to further mention The service performance of high film.

A kind of combination field and the compound vacuum deposition method of liner bias conical pipe and straight tube, the device can singly cover or Person covers combination more, and combines the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias taper Pipe is combined with the multiple types that straight tube combines the unit (14) and movable coil device (9), realizes the Optimized Matching, more of different wave The guidance of the transmission path in grade magnetic field and movable coil magnetic field, prepares pure metal film, difference in vacuum indoor any position Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of element ratio, can also be using single Set covers the device more and combines using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulse yin The one or two kinds of above method combination of polar arc, then Dc bias, pulsed bias or the compound bias of DC pulse are used, realize two Kind or the compound of two or more depositional modes carry out film deposition, prepare the chemical combination of pure metal film, different element ratios Object ceramic membrane, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.

Detailed description of the invention

Fig. 1 is a kind of assembly of combination field of present invention vacuum deposition method compound with liner bias conical pipe and straight tube Schematic diagram；Fig. 2 is 6 kinds of topology layouts of movable coil device；Fig. 3 is that liner bias conical pipe and the typical of straight tube combination unit are tied Structure schematic diagram；Fig. 4 is synchronous waveform coalignment, high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform From the matching figure of high-power impulse magnetron sputtering unipolarity single pulse waveforms integral multiple, out of phase and different pulse widths.

Specific embodiment

Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-4, a kind of combination field of present embodiment with it is interior Serving as a contrast bias conical pipe and the compound vacuum deposition method institute use device of straight tube includes grid bias power supply (1), arc power (2), electric arc Ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply wave Kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil Device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe and straight tube combination unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；

In the device:

It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12) The transmission path of the arc-plasma come out with liner bias conical pipe and straight tube combination unit (14) transmission, utilizes active line The cooperation of shape and the magnetic field magnetic line layout, direction of coil apparatus, movable coil can be using 90 degree of classical flexure types, can also To use straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), Straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and tangent of straight line, circular arc and straight line Combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), wherein Circular arc and straight line portion be determined (as illustrated in fig. 1 and 2) according to the needs of spatial position and transmission path, realize with big The separation of grain defect, makes it reach matrix surface with higher efficiency of transmission, overcomes since vacuum chamber space and target source layout are set Film caused by the limitation of deposition position caused by counting or base shape limit deposits problem of non-uniform, carries out the quick heavy of film Product, multi-stage magnetic field device (12) and liner bias conical pipe and straight tube combination unit (14) are to the bulky grain in arc-plasma Defect is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, overcome high power pulse magnetic control Sputtering technology discharge instability and ion resorption problem fill compound plasma by movable coil with higher efficiency of transmission It sets (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering Plasma reaches the matrix surface of arbitrary shape on any position or sample stage (12) in vacuum chamber (13), movable coil dress The adjustings such as coil turn, coil-span, shape and the transmission path of (9) are set to control compound plasma, reduce it is compound it is equal from Loss of the daughter in vacuum chamber (13) removes the bulky grain defect in arc-plasma, carries out the fast deposition of film；It adjusts The output resistance of rheostat device (11) is saved, realizes the positive bias variation on movable coil device (9), the electric field that positive bias generates The attraction to electronics in arc-plasma and remaining bulky grain may be implemented, and then increase output in movable coil device (9) The ion populations of arc-plasma increase, promote efficiency of transmission of the arc-plasma in movable coil device (9), disappear Except remaining bulky grain defect；Movable coil device (9) selects low-resistance copper tube, diameter, thickness and the length of copper pipe according to According to the number of turns of movable coil device (9), coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, compound etc. from The transmission path and transmission range of daughter determines；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction Suitable electric current is provided to movable coil device (9) with cooling system, the input range of electric current is 0 ~ 2000A, is guaranteed entire true The stability and movable coil device (9) of empty set system export suitable magnetic field, make compound plasma according to movable coil device (9) path transmission set guarantees to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoid Compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；

The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins Punching.

Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.

Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.

It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super Lattice, the film with nanometer multilayer or gradient-structure.

A kind of vacuum deposition method that combination field is compound with liner bias conical pipe and straight tube, makes full use of high power arteries and veins Rush sputtering target source in magnetron sputtering while carrying out the generation and ionization of ion, break through low melting point pure metal (such as aluminium, tin) or Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) are in arc ion plating Application limitation, effectively avoid bulky grain problem caused by low melting material；It is controlled simultaneously using synchronous waveform coalignment Applied back bias voltage and high-power impulse magnetron sputtering technological parameter on workpiece are conducive to improve high-power impulse magnetron sputtering target The Potential Distributing in source plasma section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate is to workpiece motion s, effectively Solve the problems, such as that high-power impulse magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ions are utilized simultaneously Metallic plasma lasting, that ionization level is high is stablized in the generation of coating technology, makes up the electric discharge of high-power impulse magnetron sputtering technology not Stable defect is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the chemical combination of different element ratios Object ceramic membrane, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.Utilize activity The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types, Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), Circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, realize to arc-plasma and Effective control in high-power impulse magnetron sputtering Plasma Transport path, to from multi-stage magnetic field device and liner bias conical pipe With remaining bulky grain defect is purged in the arc-plasma that transmits out in straight tube combination unit, overcome high power arteries and veins Magnetron sputtering technique discharge instability and ion resorption problem are rushed, damage of the compound plasma in vacuum chamber transmission process is reduced Consumption, by the guidance in movable coil magnetic field, further increases the efficiency of transmission of compound plasma and the deposition velocity of film, gram Clothes film due to caused by deposition position limitation caused by vacuum chamber space and the design of target source layout or base shape limitation is heavy Product problem of non-uniform can realize the preparation of film in the optimum position of vacuum chamber, can also adjust and live by rheostat device The series impedance of moving winding realizes the adjustment to movable coil itself positive bias parameter, realizes in arc-plasma The attraction of electronics and remaining bulky grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate the big of remnants Grain defect increases the deposition velocity of film；Guarantee electric arc in target by magnetically confined using multi-stage magnetic field filter device The stable motion on surface generates lasting arc-plasma, and so that arc-plasma is existed by the magnetic line of force of multi-stage magnetic field Both high efficiency of transmission in multi-stage magnetic field device, also change the motion path of arc-plasma and bulky grain defect to realize Separation, is further reduced the bulky grain defect even being eliminated in arc-plasma；Utilize liner bias conical pipe and straight tube group It attaches together to set and applies direct current, pulse or the compound positive bias of DC pulse, bulky grain continue or periodically effectively attract, Bulky grain problem caused by low melting material effectively is avoided, depositing ions continue or is periodically repelled, it can also be with It is vibrated by the bipolar pulse of positive back bias voltage, reduces loss of the plasma in pipe in transmission process, further increase electricity The efficiency of transmission of arc plasma and the deposition velocity of film, liner bias conical pipe and straight tube combination unit can pass through itself Shape realizes the mechanical stop screen to bulky grain defect using the variation of the multiple combinations and internal diameter outer diameter of multi-stage taper pipe and straight tube Effect is covered, limits the motion path of bulky grain defect to eliminate the bulky grain defect in arc-plasma, liner bias taper The flexible disassembly of pipe and straight tube combination unit, cleaning is convenient, it is possible to prevente effectively from polluting after target replacement to liner apparatus surface The secondary sputtering of object causes the pollution of thin film composition；Pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width And pulse frequency, it is realized using the inhibition repelling effect of electric field and remaining bulky grain defect eliminate and to composite plasma The adjusting of physical efficiency amount optimizes, and improves the section Potential Distributing of plasma near matrix, sufficiently attracts compound plasma to work Part movement, realizes the fast deposition of film；The microstructure and properties of prepared film can be carried out by pulsed bias parameter Adjustment realizes the pinning effect that energetic ion grows film using the type of pulsed bias, amplitude, pulse width and frequency, Improve the texture and stress state of film growth, improves bond strength, improve the service performance of film；Electricity is also utilized simultaneously Metallic plasma lasting, that ionization level is high is stablized in the generation of arc ion plating technique, is conducive to high ionization level ion in workpiece table The chemosynthesis reaction in face, prepare the compound ceramic films of different element ratios, function film, multi-component multi-layer, superlattices and Film or pure metal film with gradient-structure；By compound using a kind of combination field and liner bias conical pipe and straight tube Vacuum deposition method prepared by film, eliminate the bulky grain defect in film, reduce compound plasma and filtering Loss in device and vacuum chamber avoids pollution of the inner lining apparatus surface residues to film caused by different targets are replaced, The service efficiency for improving compound plasma realizes the quick preparation of film, optimizes composite plasma using pulsed bias The Energy distribution of body, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase film Service performance.

Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high Power Impulse Magnetron shielding power supply (4) exports the integral multiple for the period of pulse pulse being exported for grid bias power supply (1), as shown in figure 4, The pulse period of high-power impulse magnetron sputtering power supply (4) output is 8 times of the pulse period of grid bias power supply (1) output, technique Parameter adjustment, carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, Other are identical as embodiment one.

Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high The bias pulse waveform phase of Power Impulse Magnetron shielding power supply (4) output high-power pulse and grid bias power supply (1) output is adjustable, As shown in figure 4, in same pulse width, different phase differences is overlapped two power supply output pulse waveforms all, part It is overlapped or is not overlapped, thus according to the Proper Match of two power pulses of process choice of film deposition, technical arrangement plan, into Row film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment party Formula one is identical.

Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high The pulse width of Power Impulse Magnetron shielding power supply (4) output high-power pulse and grid bias power supply (1) output pulse is independently adjustable, As shown in figure 4, before different pulse widths makes the output pulse waveform of two power supplys that can cover the latter, the latter's covering with the former Person is completely coincident, technical arrangement plan, carries out film deposition, and preparation has different stress, microstructure and element ratio The multilayer films of example, other are identical as embodiment one.

Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and High-quality thin-film with nanometer multilayer or gradient-structure.

Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment two.

Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment three.

Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and high-power impulse magnetron sputtering can be first used in step 2 The pulsed bias power supply that power supply (4) carries out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves film and matrix Binding force, then carry out step 3, execute step 2 and step 3 repeatedly, preparation has different stress, microstructure With the multilayer films of element ratio, other are identical as embodiment four.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is unipolarity multiple-pulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, then exports pulse with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is unipolarity single hop depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, then defeated for grid bias power supply (1) with the period The cooperation of pulse out, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and not With the matching of pulse width, as shown in figure 4, technical arrangement plan, film deposition is carried out, preparation has different stress, micro- The multilayer films of structure and element ratio are seen, other are identical as embodiment one.

Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is unipolarity single hop depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillation pulse voltage can be with It works to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the unfavorable shadow of sparking plasma electric discharge It rings, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also terminate rank Duan Kaiqi is conducive to going on smoothly for next stage discharge, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, Also can choose difference, the deep oscillating impulse stage also can take up the entire pulse period, deep oscillation pulse voltage mode is formed, then It is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse wave with the period The matching of shape integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, system The standby multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is unipolarity multistage depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, then defeated for grid bias power supply (1) with the period The cooperation of pulse out, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and not With the matching of pulse width, as shown in figure 4, technical arrangement plan, film deposition is carried out, preparation has different stress, micro- The multilayer films of structure and element ratio are seen, other are identical as embodiment one.

Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is unipolarity multistage depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias can be with It works to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the unfavorable shadow of sparking plasma electric discharge It rings, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also terminate rank Duan Kaiqi is conducive to going on smoothly for next stage discharge, and the amplitude of each section of deep oscillation pulse voltage can be with stage pulse It is identical, it also can choose difference, same or different deep oscillation pulse voltage amplitude can also be used between each other, it is deep to vibrate The amplitude of pulse voltage can also be adjusted to different or phasic Chang amplitude, then defeated for grid bias power supply (1) with the period The cooperation of pulse out, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and not With the matching of pulse width, as shown in figure 4, technical arrangement plan, film deposition is carried out, preparation has different stress, micro- The multilayer films of structure and element ratio are seen, other are identical as embodiment one.

Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is bipolarity pulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, and wherein the whole voltage magnitude of ending phase, is conducive to Reduce target surface potential accumulation, eliminate spark phenomenon, go on smoothly the electric discharge of next pulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior The lining bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) and adjusts It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10) Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is bipolarity multiple-pulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, then exports pulse with the period for grid bias power supply (1) Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and The multilayer films of element ratio, other are identical as embodiment one.

Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high Power Impulse Magnetron shielding power supply (4) export pulse be bipolarity monopole single hop depth oscillating impulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is bipolarity monopole single hop depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias It can work to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the electric discharge of sparking plasma not Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also be adjusted to not Same or phasic Chang amplitude deep oscillating impulse can also occur in the negative pulse stage, can also be in the positive pulse stage There is deep oscillating impulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and high power arteries and veins with the period The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths is rushed, as shown in figure 4, technical arrangement plan, Film deposition is carried out, the multilayer films with different stress, microstructure and element ratio, other and implementation are prepared Mode one is identical.

Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high Power Impulse Magnetron shielding power supply (4) export pulse be bipolarity monopole multistage depth oscillating impulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is bipolarity monopole multistage depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias It can work to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the electric discharge of sparking plasma not Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with stage pulse It is identical, it also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, Deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then be with the period The cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, The matching of out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has difference The multilayer films of stress state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high Power Impulse Magnetron shielding power supply (4) export pulse be bipolarity the two poles of the earth single hop depth oscillating impulse, then with the period be grid bias power supply (1) cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase are exported With the matching of different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field with The liner bias conical pipe vacuum deposition method compound with straight tube connects, and opens arc power (2), opens multi-stage magnetic field power supply (5) It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and straight tube combination unit (14) Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity Resistance is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high It is bipolarity the two poles of the earth single hop depth oscillating impulse that Power Impulse Magnetron shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias It can work to start in high-power impulse magnetron sputtering power supply (4) and open, advantageously reduce the electric discharge of sparking plasma not Benefit influences, and can also open in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also tied The beam stage opens, and is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with stage pulse It is identical, it also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, It is again the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering pulse with the period The matching of waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.

Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias conical pipe and straight tube is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe and straight tube combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) Open, high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity the two poles of the earth multistage depth oscillating impulse, then with the period be bias Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.

Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias conical pipe and straight tube is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe and straight tube combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is bipolarity the two poles of the earth multistage depth oscillating impulse that high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillating impulse Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with pulse Stage is identical, also can choose difference, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose Difference can also use same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage between each other It can also be adjusted to different or phasic Chang amplitude, then be the cooperation of grid bias power supply (1) output pulse, bias with the period The matching of power pulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, As shown in figure 4, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio Multilayer films, other are identical as embodiment one.

Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field The vacuum deposition method compound with liner bias conical pipe and straight tube is connect, and is opened arc power (2), and multi-stage magnetic field power supply is opened (5) multi-stage magnetic field device (12) are adjusted, opens liner grid bias power supply (15) and adjusts liner bias conical pipe and straight tube combination unit (14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated Resistance out is opened simultaneously by synchronous waveform coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) It opens, it is unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth that high-power impulse magnetron sputtering power supply (4), which exports pulse, Oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop vibrate deeply Pulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage oscillation arteries and veins deeply The two or more combination of the operating mode of punching, then with the period be grid bias power supply (1) export pulse cooperation, bias plasma The matching of source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Shown in Fig. 4, technical arrangement plan carries out film deposition, and preparing has the more of different stress, microstructure and element ratio Layer structural membrane, other are identical as embodiment one.

Claims

1. a kind of combination field vacuum deposition method compound with liner bias conical pipe and straight tube, which is characterized in that the device Including grid bias power supply (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power Pulsed magnetron sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), Multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe and straight tube combination unit (14), liner are inclined Voltage source (15), sample stage (16) and vacuum chamber (17)；

In the device:

2. a kind of combination field according to claim 1 vacuum deposition side compound with liner bias conical pipe and straight tube Method, which is characterized in that institute's use device further includes that grid bias power supply kymographion (6) show the pulse that grid bias power supply (1) issues Voltage and current waveform, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering power supply (4) impulse waveform exported passes through synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high power arteries and veins Magnetron sputtering power supply (4) are rushed, make grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, no The matching of same-phase and different pulse widths adjusts the output waveform of grid bias power supply (1), to inclined from a kind of combination field and liner The plated film ion transmitted in pressure conical pipe and the compound vacuum deposition method of straight tube is effectively attracted, to multi-stage magnetic field dress It sets (12), liner bias conical pipe and straight tube combination unit (14) and the middle transmission of movable coil device (9) and comes out arc plasma Bulky grain in body carries out electric field inhibition, in matrix surface deposition film and controls the ratio of deposition targets element in the film, It realizes the adjusting of plasma energy and is possible to remaining bulky grain defect and carry out electric field repulsion removing.

3. a kind of combination field according to claim 1 vacuum deposition side compound with liner bias conical pipe and straight tube Method, which is characterized in that the device uses list set or more sets to combine, and the waveform control of combination synchronous waveform coalignment (8), The multiple types of movable coil device (9), multi-stage magnetic field device (12) and liner bias conical pipe and straight tube combination unit (14) Optimized Matching, multi-stage magnetic field, liner bias conical pipe and the straight tube combination unit and movable coil magnetic of different wave are realized in combination The transmission path guidance of field prepares the compound pottery of pure metal film, different element ratios in the indoor any position of vacuum Porcelain film, function film and the film with nanometer multilayer or gradient-structure.

4. a kind of combination field according to claim 1 vacuum deposition side compound with liner bias conical pipe and straight tube Method, which is characterized in that the pulsed bias of magnetron sputtering combination high voltage is first carried out using high-power impulse magnetron sputtering power supply (4) Power supply carries out ion implantation and deposition, improves the binding force of film and matrix, then is covered using list or covered the device more and combined and adopted With Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc it is one or two kinds of more than Method combination, then apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two kinds or two Kind or more the compound of depositional mode carry out film deposition, to prepare the compound ceramic of pure metal film, different element ratios Film, function film and the film with nanometer multilayer or gradient-structure.

5. a kind of combination field according to claim 1 vacuum deposition side compound with liner bias conical pipe and straight tube Method, which is characterized in that it is a kind of in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select Or a variety of mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and have The film of nanometer multilayer or gradient-structure.