CN109989013A - A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe - Google Patents
A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: the devices such as grid bias power supply, arc ion plating target source and power supply, multi-stage magnetic field device and power supply, liner bias ladder pipe device and grid bias power supply, movable coil device and power supply, Waveform Matching device, high-power impulse magnetron sputtering target source and power supply；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply plasma is adjusted, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.
Description
Technical field
The present invention relates to a kind of combination fields and the compound vacuum deposition method of liner bias ladder pipe, belong to material surface
Processing technology field.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect,
The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists
50W/cm2, the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits,
The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue
[J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university
Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I.
A novel pulsed magnetron sputter technique utilizing very high target power
Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes
Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width,
Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering
100 times, about 1000 ~ 3000W/cm2, the density of plasma reaches 1018m-3The order of magnitude, central region ion concentration
Up to 1019m-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level
Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home
Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique
[D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high
The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao
East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics
Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable,
And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface
The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc
The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control
The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public
The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill
The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation
It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity
The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C,
Cavaleiro A. Effect of peak target power on the properties of Cr thin films
sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode
[J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode
Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation
Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao
J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films
deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257
(13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied
Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter
Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M,
Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a
filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges
and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth
International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters
Bias improves the efficiency of transmission of plasma.
It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity
Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect
Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary
Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J.,
J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through
Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and
Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G.
TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3):
424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter
Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.
Summary of the invention
The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target
The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side
Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin
Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity
Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum
Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device
The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point
Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control
The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from
Daughter, what constraint and biasing electric field in conjunction with multi-stage magnetic field filter method and liner bias ladder pipe device own form attracted answers
Cooperation is used to eliminate the bulky grain defect contained in arc-plasma, while guaranteeing that arc-plasma is imitated with higher transmission
Rate by liner bias ladder pipe device and multi-stage magnetic field filter device, recycle movable coil device magnetically confined and itself
The compound action that biasing electric field attracts eliminates the electric arc for transmitting out from multi-stage magnetic field device and liner bias ladder pipe device
The bulky grain defect contained in plasma, at the same using movable coil device control high-power impulse magnetron sputtering and electric arc from
The compound plasma transmission direction in a vacuum chamber of son plating, realize in vacuum chamber any position substrate work-piece surface it is thin
The control and regulation of film deposition and thin film composition reduce compound plasma in the indoor loss of vacuum, overcome due to vacuum chamber and
Film caused by target source position limitation or base shape limit deposits problem of non-uniform, thoroughly remove from multi-stage magnetic field device and
It is possible to remaining bulky grain defect out in the arc-plasma for transmitting in liner bias ladder pipe device, makes workpiece surface
Ion energy is adjusted in the case where applying back bias voltage, removes arc plasma using the biasing electric field inhibiting effect of matrix surface
Bulky grain defect in body, the high-quality thin-film that preparation is continuous, fine and close, while realizing to target elements content addition control in film
System, increases the deposition velocity of film and reduces very the efficiency of transmission for reducing the production cost using alloys target, improving plasma
To bulky grain defect is eliminated to the adverse effect of film microstructure, continuous compact deposits and service performance, a kind of group is proposed
Close magnetic field and the compound vacuum deposition method of liner bias ladder pipe.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), high power
Pulsed magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), high power arteries and veins
Rush magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device (9), movable coil device
Power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias ladder pipe
Device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse
Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16),
Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source
(5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively,
One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity
The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port
(10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there
Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma
One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each
Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction
Fixed, liner bias ladder pipe device (14) connects the cathode output end of liner grid bias power supply (15), open power supply total control switch and
External water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4)
Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output
Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias ladder pipe device (14) can cooperate the knot of the outer diameter of multi-stage magnetic field device (12) design ladder pipe, ladder pipe
Structure can also cooperate multi-stage magnetic field device (12) design 2 grades of ladder pipes, 3 grades of ladder pipes or 4 grades and the above ladder pipe structure,
Gradient difference and inlet and outlet are laid out, and are connected and fixed between every grade of ladder pipe, are fixed by the rivet interlacement and position of magnetism-free stainless steel；
Activity insulation is assembled together between liner bias ladder pipe device (14) and multi-stage magnetic field device (12), apparent surface pollution level
Disassembly cleaning in time and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (12) under linerless board status and are difficult to clear up
Problem, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；
The outlet of the length of magnetic field at different levels and ladder pipe at different levels of liner bias ladder pipe device (14) and multi-stage magnetic field device (12) matches
It closes, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), the internal diameter of entrance on the right side of ladder pipeD IntoGreater than electric arc from
The outer diameter of son plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), it is selected according to different targets and technological parameter
It selects, the mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit；
Multi-stage magnetic field device (12) and the material of liner bias ladder pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias ladder pipe device (14) determine the outer diameter of ladder pipe according to multi-stage magnetic field device (12) internal diameter,
Ladder pipe needs that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (15), liner bias ladder pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias ladder pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias ladder pipe
The probability of device (14)；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering
Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering
Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse,
Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list
Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth
The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A,
Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then
According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity
Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film；
The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable,
Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse
Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge,
It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases
The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later
The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode
Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns
The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse
Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust
For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse
There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period
The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8)
Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from
The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more
The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias ladder pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with compared with
High efficiency of transmission reaches matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by person's base shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is right
Bulky grain defect in arc-plasma is filtered elimination, guarantees the uniformity of target ablation, and that improves target utilizes effect
Rate overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound plasma with higher
Efficiency of transmission by movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc etc. from
Daughter and high-power impulse magnetron sputtering plasma reach any on any position or sample stage (12) in vacuum chamber (13)
The matrix surface of shape, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (9) control
Compound plasma reduces loss of the compound plasma in vacuum chamber (13), removes the bulky grain in arc-plasma
Defect carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized on movable coil device (9)
The attraction to electronics in arc-plasma and remaining bulky grain may be implemented in positive bias variation, the electric field that positive bias generates, into
And the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc-plasma in work
Efficiency of transmission in moving-wire coil apparatus (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low-resistance purple
Copper pipe, the diameter of copper pipe, the number of turns of thickness and length foundation movable coil device (9), coil channel diameter, coil shape, line
Circle turn-to-turn away from, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil installation's power source
(10) positive and negative anodes provide suitable electric current to movable coil device (9) according to magnetic field strength, direction and cooling system, electric current
Input range is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic field, makes
The path transmission that compound plasma is set according to movable coil device (9), while guaranteeing to remove remaining bulky grain with
High efficiency of transmission reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the quick heavy of film
Product；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress
(9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough
Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. high-power impulse magnetron sputtering technology realizes that target is higher by high pressure low-frequency pulse
Metallic ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) of low melting point or polynary conjunction
Golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect；b.
Arc ion plating target source can make up the discharge instability in high-power impulse magnetron sputtering target source and high-melting-point target is difficult to ionization
Limitation, guarantee that the high density of depositing ions persistently generates；C. due to using synchronous waveform coalignment, matrix can be made to have
Ion caused by the attraction high-power impulse magnetron sputtering target source of effect reduces high-power impulse magnetron sputtering technology to produced
The resorption effect of ion, ensure that film deposition rate, greatly improve the energy of depositing ions；D. by adjusting high power
Compound plasma may be implemented in conjunction with the technological parameter in arc ion plating target source in the technological parameter in pulsed magnetron sputtering target source
The ion ratio of middle various elements realizes the film deposition of different element ratios；E. the microstructure and properties of prepared film
It can be adjusted by pulsed bias parameter, realize energetic ion pair using the amplitude, pulse width and frequency of pulsed bias
The pinning effect of film growth, improves the texture and stress state of film growth, and improving film substrate bond strength improves film
Service performance；F. due to eliminating the pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) of low melting point
With application limitation of the nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating, low melting point element is avoided
Bulky grain defect, the addition of these elements and being adjusted flexibly for ratio in original multi-element film preparation process, institute may be implemented
The film crystal tissue of preparation is finer and close, can be further improved the mechanical property of film；G. movable coil device is utilized
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can be using 90 degree of classical flexure types, can also be using straight
Line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersects), straight line and directly
Line combination (magnetic line of force intersection of two sections of straight line portions), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein
It is determined with straight line portion according to the needs of spatial position and transmission path, realization has arc-plasma transmission path
Effect control, the further removing to remaining bulky grain defect from multi-stage magnetic field device and liner bias ladder pipe device, gram
High-power impulse magnetron sputtering technology discharge instability and ion resorption problem have been taken, has reduced compound plasma in vacuum chamber
Loss in transmission process further increases the efficiency of transmission of compound plasma and thin by the guidance in movable coil magnetic field
The deposition velocity of film overcomes deposition position limitation caused by designing due to vacuum chamber space and target source layout or base shape limit
Film caused by making deposits problem of non-uniform, can realize the preparation of film in the optimum position of vacuum chamber, can also pass through change
Device device is hindered, the series impedance of movable coil is adjusted, realizes the adjustment to movable coil itself positive bias parameter, is realized to electricity
The attraction of electronics and remaining bulky grain in arc plasma, transmission effect of the Lai Tisheng arc-plasma in movable coil
Rate eliminates remaining bulky grain defect, increases the deposition velocity of film；H. multi-stage magnetic field filter device can pass through the pact in magnetic field
Beam guarantees that electric arc in the stable motion of target material surface, generates lasting arc-plasma, and the magnetic line of force for passing through multi-stage magnetic field
Make high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also changes the movement of arc-plasma and bulky grain defect
Path is further reduced the bulky grain defect even being eliminated in arc-plasma come the separation both realized；I. liner bias
Ladder pipe device, which passes through, can apply direct current, pulse or the compound positive bias of DC pulse, continue to bulky grain or the period
Property effective attraction, to depositing ions carry out continue or periodically repel, the bipolar pulse of positive back bias voltage can also be passed through
Oscillation reduces loss of the plasma in pipe in transmission process, further increases the efficiency of transmission of arc-plasma and thin
The deposition velocity of film；J. liner bias ladder pipe device can pass through ladder pipe entrance and exit by own form
Internal diameter variation and the structure combination of ladder pipe, limit the motion path of bulky grain defect to eliminate big in arc-plasma
Grain defect reduces the probability that bulky grain reaches deposited samples surface by ladder pipe device, realizes the mechanical stop to bulky grain
Shielding, the flexible disassembly of liner bias ladder pipe device, cleaning is convenient, avoids the pipe of multi-stage magnetic field device under linerless board status
Wall polluting clear up the problem of, and it is possible to prevente effectively from target replacement after, different targets to liner ladder pipe pollutant two
It is secondary to sputter the pollution for causing thin film composition；K. pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width and arteries and veins
Frequency is rushed, is realized using the inhibition repelling effect of electric field and remaining bulky grain defect eliminate and to composite plasma physical efficiency
The adjusting of amount optimizes；L. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize arteries and veins
Type, amplitude, pulse width and the frequency for rushing bias realize the pinning effect that energetic ion grows film, improve film growth
Texture and stress state, improve bond strength, improve the service performance of film；M. by using a kind of combination field with
Film prepared by the compound vacuum deposition method of liner bias ladder pipe, eliminates the bulky grain defect in film, reduces
Loss of the compound plasma in filter device and vacuum chamber improves the service efficiency of compound plasma, realizes film
Quick preparation, and can guarantee that film crystal tissue and microstructure are finer and close, be conducive to further increase making for film
Use performance.
A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe, the device can singly be covered or be covered more
Combination, and combine the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias ladder pipe device
(14) it is combined with the multiple types of movable coil device (9), realizes the Optimized Matching, multi-stage magnetic field and movable coil of different wave
The transmission path in magnetic field guides, and the compound of pure metal film, different element ratios is prepared in the indoor any position of vacuum
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure can also cover using single set or mostly the device simultaneously
In conjunction with one or two kinds of using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc
Above method combination, then Dc bias, pulsed bias or the compound bias of DC pulse are used, it is two or more heavy to realize
The compound of product mode carries out film deposition, and it is thin to prepare pure metal film, the compound ceramic film of different element ratios, function
Film and high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is a kind of scheme of erection of combination field and the compound vacuum deposition method of liner bias ladder pipe of the present invention；
Fig. 2 is 6 kinds of topology layouts of movable coil device；Fig. 3 is the typical structure schematic diagram of liner bias ladder pipe device；Fig. 4 is wave
Just as step coalignment, high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and high power pulse magnetic
The matching figure of control sputtering unipolarity single pulse waveforms integral multiple, out of phase and different pulse widths.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-4, a kind of combination field of present embodiment with it is interior
Serving as a contrast the compound vacuum deposition method institute use device of bias ladder pipe includes grid bias power supply (1), arc power (2), arc ion plating
Target source (3), high-power impulse magnetron sputtering power supply (4), high-power impulse magnetron sputtering target source (5), grid bias power supply waveform oscillography
Device (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil device
(9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source
(13), liner bias ladder pipe device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse
Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16),
Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source
(5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively,
One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity
The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port
(10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there
Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma
One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each
Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction
Fixed, liner bias ladder pipe device (14) connects the cathode output end of liner grid bias power supply (15), open power supply total control switch and
External water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4)
Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output
Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias ladder pipe device (14) can cooperate the knot of the outer diameter of multi-stage magnetic field device (12) design ladder pipe, ladder pipe
Structure can also cooperate multi-stage magnetic field device (12) design 2 grades of ladder pipes, 3 grades of ladder pipes or 4 grades and the above ladder pipe structure,
Gradient difference and inlet and outlet are laid out, and are connected and fixed between every grade of ladder pipe, are fixed by the rivet interlacement and position of magnetism-free stainless steel；
Activity insulation is assembled together between liner bias ladder pipe device (14) and multi-stage magnetic field device (12), apparent surface pollution level
Disassembly cleaning in time and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (12) under linerless board status and are difficult to clear up
Problem, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；
The outlet of the length of magnetic field at different levels and ladder pipe at different levels of liner bias ladder pipe device (14) and multi-stage magnetic field device (12) matches
It closes, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), the internal diameter of entrance on the right side of ladder pipeD IntoGreater than electric arc from
The outer diameter of son plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), it is selected according to different targets and technological parameter
It selects, the mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit；
Multi-stage magnetic field device (12) and the material of liner bias ladder pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias ladder pipe device (14) determine the outer diameter of ladder pipe according to multi-stage magnetic field device (12) internal diameter,
Ladder pipe needs that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (15), liner bias ladder pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias ladder pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias ladder pipe
The probability of device (14)；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering
Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering
Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse,
Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list
Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth
The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A,
Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then
According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity
Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film；
The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable,
Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse
Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge,
It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases
The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later
The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode
Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns
The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse
Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust
For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse
There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period
The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8)
Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from
The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more
The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias ladder pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined (as illustrated in fig. 1 and 2) according to the needs of spatial position and transmission path, is realized and bulky grain defect
Separation makes it reach matrix surface with higher efficiency of transmission, overcomes caused by being designed due to vacuum chamber space and target source layout
Film caused by deposition position limitation or base shape limit deposits problem of non-uniform, carries out the fast deposition of film, multistage
Magnetic field device (12) and liner bias ladder pipe device (14) are filtered elimination to the bulky grain defect in arc-plasma,
The uniformity for guaranteeing target ablation, improves the utilization efficiency of target, and it is unstable to overcome the electric discharge of high-power impulse magnetron sputtering technology
Fixed and ion resorption problem makes compound plasma pass through movable coil device (9) with higher efficiency of transmission, while realization pair
The adjusting of magnetic direction and magnetic field strength, pilot arc plasma and high-power impulse magnetron sputtering plasma reach vacuum
The matrix surface of arbitrary shape on any position or sample stage (12) in room (13), the coil turn of movable coil device (9),
The adjustings such as coil-span, shape and transmission path control compound plasma, reduce compound plasma in vacuum chamber (13)
Interior loss removes the bulky grain defect in arc-plasma, carries out the fast deposition of film；Standardsizing rheostat device (11)
Output resistance, realize movable coil device (9) on positive bias variation, positive bias generate electric field may be implemented to electric arc etc.
The attraction of electronics and remaining bulky grain in gas ions, and then increase the arc-plasma exported in movable coil device (9)
Ion populations increase, and promote efficiency of transmission of the arc-plasma in movable coil device (9), eliminate remaining bulky grain and lack
It falls into；Movable coil device (9) selects low-resistance copper tube, and diameter, thickness and the length of copper pipe are according to movable coil device (9)
The number of turns, coil channel diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and biography
Defeated distance determines；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic field strength, direction and cooling system to active line
Coil apparatus (9) provides suitable electric current, and the input range of electric current is 0 ~ 2000A, guarantees the stability and work of entire vacuum system
The suitable magnetic field of moving-wire coil apparatus (9) output, the path transmission for setting compound plasma according to movable coil device (9),
Guarantee to reach matrix surface while removing remaining bulky grain with high efficiency of transmission, avoids compound plasma in vacuum
Loss, realizes the fast deposition of film in room (13)；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress
(9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough
Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and
Nonmetallic materials (such as graphite), high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as aluminium, tin) or
Multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) can be used single
Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more
Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
A kind of combination field and the compound vacuum deposition method of liner bias ladder pipe, make full use of high power pulse magnetic control
Sputtering target source carries out the generation and ionization of ion simultaneously in sputtering, break through low melting point pure metal (such as aluminium, tin) or polynary conjunction
The application of golden material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) in arc ion plating
Limitation, effectively avoids bulky grain problem caused by low melting material；Simultaneously using on synchronous waveform coalignment control workpiece
Applied back bias voltage and high-power impulse magnetron sputtering technological parameter, be conducive to improve high-power impulse magnetron sputtering target source etc. from
The Potential Distributing in daughter section, the ion for sufficiently high-power impulse magnetron sputtering being attracted to generate effectively solve high to workpiece motion s
The problem that Power Impulse Magnetron sputtering intermediate ion resorption effect causes film deposition efficiency low；Arc ion plating (aip) is utilized simultaneously
Generation stablize continue, the high metallic plasma of ionization level, make up high-power impulse magnetron sputtering technology discharge instability
Defect is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound ceramic of different element ratios
Film, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.It is filled using movable coil
The cooperation of shape and the magnetic field magnetic line layout, direction set, movable coil can also be adopted using 90 degree of classical flexure types
With straight line and bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line
With Straight Combination (magnetic line of force intersection of two sections of straight line portions), combination (three sections of intersections and the tangent group of straight line, circular arc and straight line
Close) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection), circle therein
Arc and straight line portion are determined according to the needs of spatial position and transmission path, are realized to arc-plasma and high power arteries and veins
The effective control for rushing magnetron sputtering Plasma Transport path is passed to from multi-stage magnetic field device and liner bias ladder pipe device
Remaining bulky grain defect is purged in the arc-plasma that output comes, and overcomes the electric discharge of high-power impulse magnetron sputtering technology
Unstable and ion resorption problem reduces loss of the compound plasma in vacuum chamber transmission process, passes through movable coil magnetic
The guidance of field, further increases the efficiency of transmission of compound plasma and the deposition velocity of film, overcomes due to vacuum chamber space
Film caused by the limitation of deposition position caused by designing with target source layout or base shape limit deposits problem of non-uniform, can be with
The preparation of film is realized in the optimum position of vacuum chamber, can also adjust the series resistance of movable coil by rheostat device
Value realizes the adjustment to movable coil itself positive bias parameter, realizes to the electronics and remaining bulky grain in arc-plasma
Attraction, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining bulky grain defect, increase film
Deposition velocity；Guarantee that electric arc in the stable motion of target material surface, produces by magnetically confined using multi-stage magnetic field filter device
Raw lasting arc-plasma, and height of the arc-plasma in multi-stage magnetic field device is made by the magnetic line of force of multi-stage magnetic field
Effect transmission changes the motion path of arc-plasma and bulky grain defect also to realize the separation of the two, is further reduced very
To the bulky grain defect eliminated in arc-plasma；Apply direct current, pulse or direct current arteries and veins using liner bias ladder pipe device
Compound positive bias is rushed, bulky grain continue or is periodically effectively attracted, is effectively avoided caused by low melting material
Bulky grain problem continue to depositing ions or periodically repel, can also be shaken by the bipolar pulse of positive back bias voltage
It swings, reduces loss of the plasma in pipe in transmission process, further increase the efficiency of transmission and film of arc-plasma
Deposition velocity, liner bias ladder pipe device can pass through the internal diameter of ladder pipe entrance and exit by own form
The combination of the structure of variation and ladder pipe, the motion path for limiting bulky grain defect lack to eliminate the bulky grain in arc-plasma
It falls into, reduces the probability that bulky grain reaches deposited samples surface by ladder pipe device, realize the mechanical stop to bulky grain defect
Screen effect；The flexible disassembly of liner bias ladder pipe device, cleaning is convenient, avoids multi-stage magnetic field device under linerless board status
Inside pipe wall the problem of polluting cleaning, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant draw
Play the pollution of thin film composition；Pulsed bias power supply is by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency, benefit
It is realized with the inhibition repelling effect of electric field and the adjusting eliminated and to compound plasma energy is carried out to remaining bulky grain defect
Optimization, improves the section Potential Distributing of plasma near matrix, sufficiently attracts compound plasma to workpiece motion s, realizes thin
The fast deposition of film；The microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize pulse
Type, amplitude, pulse width and the frequency of bias realize the pinning effect that energetic ion grows film, improve film growth
Texture and stress state improve bond strength, improve the service performance of film；Arc ion plating (aip) is also utilized simultaneously
It generates and stablizes metallic plasma lasting, that ionization level is high, it is anti-in the chemical synthesis of workpiece surface to be conducive to high ionization level ion
It answers, prepares the compound ceramic films of different element ratios, function film, multi-component multi-layer, superlattices and with gradient-structure
Film or pure metal film；By using prepared by a kind of combination field and the compound vacuum deposition method of liner bias ladder pipe
Film, eliminate the bulky grain defect in film, reduce loss of the compound plasma in filter device and vacuum chamber,
Pollution of the inner lining apparatus surface residues to film caused by different targets are replaced is avoided, making for compound plasma is improved
With efficiency, the quick preparation of film is realized, the Energy distribution of compound plasma is optimized using pulsed bias, and can guarantee
Film crystal tissue and microstructure are finer and close, are conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
Power supply (4) exports the integral multiple for the period of pulse pulse being exported for grid bias power supply (1), as shown in figure 4, high power pulse magnetic control splashes
The pulse period of radio source (4) output is 8 times of the pulse period of grid bias power supply (1) output, and technical arrangement plan carries out film
Deposition prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment
Together.
Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
The bias pulse waveform phase of power supply (4) output high-power pulse and grid bias power supply (1) output is adjustable, as shown in figure 4, in Tong Mai
When rushing width, different phase differences allows two power supply output pulse waveforms to be all overlapped, partially overlap or be not overlapped, thus
According to the Proper Match of two power pulses of process choice of film deposition, technical arrangement plan carries out film deposition, preparation tool
There are the multilayer films of different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
The pulse width of power supply (4) output high-power pulse and grid bias power supply (1) output pulse is independently adjustable, as shown in figure 4, different
Pulse width makes that the output pulse waveform of two power supplys can cover the latter with the former, the latter covers the former or is completely coincident, work
The adjustment of skill parameter, carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin
Film, other are identical as embodiment one.
Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step
Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or
Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece
Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and
High-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, can first use high-power impulse magnetron sputtering power supply in step 2
(4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix
With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment two.
Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, can first use high-power impulse magnetron sputtering power supply in step 2
(4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix
With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment three.
Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, can first use high-power impulse magnetron sputtering power supply in step 2
(4) pulsed bias power supply for carrying out magnetron sputtering combination high voltage carries out ion implantation and deposition, improves the knot of film and matrix
With joint efforts, step 3 is then carried out, executes step 2 and step 3 repeatedly, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment four.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
It is unipolarity multiple-pulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period
The matching for rushing waveform from high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Fig. 4 institute
Show, technical arrangement plan, carry out film deposition, prepares the multilayer knot with different stress, microstructure and element ratio
Structure film, other are identical as embodiment one.
Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
It is unipolarity single hop depth oscillating impulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period, partially
Of voltage source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio
The multilayer films of example, other are identical as embodiment one.
Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is unipolarity single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillation pulse voltage can be in high power pulse magnetic
It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre
It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to
One stage discharge is gone on smoothly, and the amplitude of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference,
The deep oscillating impulse stage also can take up the entire pulse period, form deep oscillation pulse voltage mode, then with the period be bias plasma
Source (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, different phases
The matching of position and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress shapes
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is unipolarity multistage depth oscillating impulse that radio source (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse with the period,
Of grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio
The multilayer films of example, other are identical as embodiment one.
Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is unipolarity multistage depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power pulse magnetic
It controls shielding power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be in centre
It opens, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, under being conducive to
One stage discharge is gone on smoothly, and the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose
Difference can also use same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage between each other
It can also be adjusted to different or phasic Chang amplitude, then be the cooperation of grid bias power supply (1) output pulse with the period, partially
Of voltage source impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Match, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress, microstructure and element ratio
The multilayer films of example, other are identical as embodiment one.
Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity pulse that radio source (4), which exports pulse, wherein the whole voltage magnitude of ending phase, and it is tired to advantageously reduce target surface potential
Product eliminates spark phenomenon, goes on smoothly the electric discharge of next pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment one.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field with it is interior
The compound vacuum deposition method connection of bias ladder pipe is served as a contrast, opens arc power (2), it is multistage to open multi-stage magnetic field power supply (5) adjusting
Magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens active line
Coil apparatus power supply (10) adjusts movable coil device (9), and the output resistance of standardsizing rheostat device (10) is matched by synchronous waveform
Device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high-power impulse magnetron sputtering
It is bipolarity multiple-pulse that power supply (4), which exports pulse, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period
The matching for rushing waveform from high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, such as Fig. 4 institute
Show, technical arrangement plan, carry out film deposition, prepares the multilayer knot with different stress, microstructure and element ratio
Structure film, other are identical as embodiment one.
Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity monopole single hop depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment one.
Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity monopole single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins
It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be
Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase
In going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also be adjusted to different or interim change
The amplitude of change deep oscillating impulse can also occur in the negative pulse stage, deep oscillating impulse can also occur in the positive pulse stage, then
It is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse wave with the period
The matching of shape integral multiple, out of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, system
The standby multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity monopole multistage depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment one.
Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity monopole multistage depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins
It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be
Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase
Can be identical as stage pulse in the amplitude of going on smoothly for next stage discharge, deep oscillation pulse voltage, also it can choose
Difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, can also be in negative pulse
There is deep oscillating impulse in stage, can also be grid bias power supply (1) output in the deep oscillating impulse of positive pulse stage appearance, then with the period
The cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and difference
The matching of pulse width carries out film deposition as shown in figure 4, technical arrangement plan, and preparation has different stress, microcosmic
The multilayer films of structure and element ratio, other are identical as embodiment one.
Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity the two poles of the earth single hop depth oscillating impulse that radio source (4), which exports pulse, then exports matching for pulse with the period for grid bias power supply (1)
It closes, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths
Matching carry out film deposition as shown in figure 4, technical arrangement plan, preparation has different stress, microstructure and member
The multilayer films of plain ratio, other are identical as embodiment one.
Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field with
The compound vacuum deposition method connection of liner bias ladder pipe, opens arc power (2), it is more to open multi-stage magnetic field power supply (5) adjusting
Grade magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), unlatching activity
Coil device power supply (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
It is opened simultaneously with device (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4), high power pulse magnetic control splashes
It is bipolarity the two poles of the earth single hop depth oscillating impulse that radio source (4), which exports pulse, wherein deep oscillating impulse bias can be in high power arteries and veins
It rushes magnetron sputtering power supply (4) work starting to open, advantageously reduces the adverse effect of sparking plasma electric discharge, it can also be
Centre is opened, and is conducive to improve plasma density, the stress of adjustment film deposition can also be opened, favorably in ending phase
Can be identical as stage pulse in the amplitude of going on smoothly for next stage discharge, deep oscillation pulse voltage, also it can choose
Difference, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with the period be bias
Power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, difference
The matching of phase and different pulse widths, as shown in figure 4, technical arrangement plan, carries out film deposition, preparation has different stress
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum deposition method compound with liner bias ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control
It is bipolarity the two poles of the earth multistage depth oscillating impulse that shielding power supply (4), which exports pulse, then exports pulse with the period for grid bias power supply (1)
Cooperation, grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulses are wide
The matching of degree carries out film deposition as shown in figure 4, technical arrangement plan, preparation have different stress, microstructure and
The multilayer films of element ratio, other are identical as embodiment one.
Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum deposition method compound with liner bias ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control
It is bipolarity the two poles of the earth multistage depth oscillating impulse that shielding power supply (4), which exports pulse, wherein deep oscillating impulse bias can be in high power
Pulsed magnetron sputtering power supply (4) work starting is opened, and the adverse effect of sparking plasma electric discharge is advantageously reduced, can also be with
It is opened in centre, is conducive to improve plasma density, the stress of adjustment film deposition can also be opened in ending phase, have
Conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be identical as stage pulse, can also select
Difference is selected, the amplitude of each section of deep oscillation pulse voltage can be identical as stage pulse, also can choose difference, between each other may be used
To use same or different deep oscillation pulse voltage amplitude, the amplitude of deep oscillation pulse voltage can also be adjusted to different
Or phasic Chang amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and Gao Gong
The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technological parameter
Adjustment carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other
It is identical as embodiment one.
Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum deposition method compound with liner bias ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens the bias that liner grid bias power supply (15) adjust liner bias ladder pipe device (14), opens and lives
Moving winding installation's power source (10) adjusts movable coil device (9), the output resistance of standardsizing rheostat device (10), by synchronous waveform
Coalignment (8) control grid bias power supply (1) and high-power impulse magnetron sputtering power supply (4) are opened simultaneously, high power pulse magnetic control
It is more for unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity that shielding power supply (4) exports pulse
The deep oscillating impulse of section, bipolarity pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole are more
The deep oscillating impulse of section, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode two
Kind or two or more combinations, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and Gao Gong
The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in figure 4, technological parameter
Adjustment carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other
It is identical as embodiment one.
Claims (5)
1. a kind of combination field and the compound vacuum deposition method of liner bias ladder pipe, which is characterized in that the device includes inclined
Voltage source (1), arc power (2), arc ion plating target source (3), high-power impulse magnetron sputtering power supply (4), high power pulse magnetic
Control sputtering target source (5), grid bias power supply kymographion (6), high-power impulse magnetron sputtering power supply wave shape oscillograph (7), waveform
Simultaneously match device (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field
Device (12), multi-stage magnetic field installation's power source (13), liner bias ladder pipe device (14), liner grid bias power supply (15), sample stage
(16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), high power pulse
Mutually insulated between magnetic controlled sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample stage (16),
Sample stage (16) connects the cathode output end of grid bias power supply (1), arc ion plating target source (3) and high-power impulse magnetron sputtering target source
(5) it is mounted on vacuum chamber (17), connects the cathode output end of arc power (2) and high-power impulse magnetron sputtering power supply (4) respectively,
One end of high-power impulse magnetron sputtering power supply wave shape oscillograph (7) is grounded, and the other end connects high-power impulse magnetron sputtering electricity
The output end in source (4), movable coil device (9) connect movable coil installation's power source by the positive and negative anodes input terminal on flange port
(10), positive and negative anodes connection can be determined according to output magnetic direction, and rheostat device (11) and movable coil device (9) are gone here and there
Connection, access is with the circuit of movable coil installation's power source (10), and the cathode of grid bias power supply (1) connects sample stage (16), bias plasma
One end of source waveform oscillograph (6) is grounded, and the other end connects the output end of grid bias power supply (1), multi-stage magnetic field device (12) it is each
Grade magnetic field connects each output end of multi-stage magnetic field installation's power source (13), and positive and negative anodes connection can carry out true according to output magnetic direction
Fixed, liner bias ladder pipe device (14) connects the cathode output end of liner grid bias power supply (15), open power supply total control switch and
External water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show the output wave of high-power impulse magnetron sputtering power supply (4)
Shape controls grid bias power supply (1) and high power pulse magnetic control by the synchronous triggering signal of synchronous waveform coalignment (8) output
Shielding power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias ladder pipe device (14) can cooperate the knot of the outer diameter of multi-stage magnetic field device (12) design ladder pipe, ladder pipe
Structure can also cooperate multi-stage magnetic field device (12) design 2 grades of ladder pipes, 3 grades of ladder pipes or 4 grades and the above ladder pipe structure,
Gradient difference and inlet and outlet are laid out, and are connected and fixed between every grade of ladder pipe, are fixed by the rivet interlacement and position of magnetism-free stainless steel；
Activity insulation is assembled together between liner bias ladder pipe device (14) and multi-stage magnetic field device (12), apparent surface pollution level
Disassembly cleaning in time and installation avoid the inside pipe wall pollution of multi-stage magnetic field device (12) under linerless board status and are difficult to clear up
Problem, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；
The outlet of the length of magnetic field at different levels and ladder pipe at different levels of liner bias ladder pipe device (14) and multi-stage magnetic field device (12) matches
It closes, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), the internal diameter of entrance on the right side of ladder pipeD IntoGreater than electric arc from
The outer diameter of son plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), it is selected according to different targets and technological parameter
It selects, the mechanical stop shielding to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit；
Multi-stage magnetic field device (12) and the material of liner bias ladder pipe device (14) select the 304 stainless of nonmagnetic, resistance to cleaning
Steel material, multi-stage magnetic field device (12) determine length, internal-and external diameter, thickness, magnetic according to the diameter of target, cooling, transmission range
Field turn and direction, liner bias ladder pipe device (14) determine the outer diameter of ladder pipe according to multi-stage magnetic field device (12) internal diameter,
Ladder pipe needs that suitable thickness is selected to process according to actual design parameter according to length and rigidity；
It opens liner grid bias power supply (15), liner bias ladder pipe device (14) keeps direct current, pulse, multiple-pulse, direct current arteries and veins
Rush compound or bipolar pulse bias, wherein pulse, multiple-pulse or the adjustable pulse frequency of bipolar pulse biased type,
Pulse width and pulse pattern, the adjustment of output voltage guarantee that liner bias ladder pipe device (14) attract bulky grain,
Depositing ions are repelled, loss of the arc-plasma in pipe in transmission process is reduced, reduction even is eliminated electric arc etc.
Bulky grain defect in gas ions improves the efficiency of transmission of arc-plasma and the deposition velocity of film, liner grid bias power supply
(15) voltage parameter is -200 ~+200V, is direct current, pulse, multiple-pulse, DC pulse is compound or bipolar pulse is electric
Source, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, during the deposition process produce bulky grain defect
Raw periodical or continual and steady attraction greatly reduces bulky grain and passes through multi-stage magnetic field device (12) and liner bias ladder pipe
The probability of device (14)；
It opens high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust high-power impulse magnetron sputtering
Technological parameter needed for target source (5), high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show high-power impulse magnetron sputtering
Power supply (4) output impulse waveform, high-power impulse magnetron sputtering power supply (4) using unipolarity pulse, unipolarity multiple-pulse,
Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list
Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth
The operating mode of multistage depth oscillating impulse, output power 100W ~ 500kW, 0~10kHz of frequency, peak point current 10A~5000A,
Positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, positive negative pulse stuffing are set to the 5 μ s of μ s~3000, then
According to target type, the operating voltage of size and depositing operation selection high-power impulse magnetron sputtering target source (5) output, peak value electricity
Stream, positive negative pulse stuffing width and interval generate stable multiple elements design plasma, the element ratio of adjustment target in the film；
The pulse voltage of high-power impulse magnetron sputtering power supply (4), each section of duty ratio, frequency and deep waveform can with Independent adjustable,
Wherein unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, the adjustable high power build-up of luminance of unipolarity multistage depth oscillating impulse
Pulse voltage amplitude and waveform pattern make high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge,
It increases the target current in high-power impulse magnetron sputtering target source (5) rapidly, increases
The plasma density and ionization level of high-power impulse magnetron sputtering, high-power impulse magnetron sputtering power supply (4) enters later
The discharge condition of the normal low voltage and high current of normal high-power impulse magnetron sputtering, can also pass through of short duration deep oscillation mode
Formula can improve the discharge condition in high-power impulse magnetron sputtering target source (5), eliminate sparking caused by charge accumulated and ion returns
The influences of the non stationary discharges factor to film preparation such as suction are also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse
Bias can work to start and open in high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma electric discharge
Adverse effect, can also be opened in centre, be conducive to improve plasma density, the stress of adjustment film deposition can also be with
It is opened in ending phase, is conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can also adjust
For different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be in positive pulse
There is deep oscillating impulse in stage, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and Gao Gong with the period
The matching of rate pulsed magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film deposition；
Grid bias power supply (1) output voltage and high-power impulse magnetron sputtering power supply (4) are controlled by synchronous waveform coalignment (8)
Output voltage, -1000 μ s of μ s~1000 of phase difference both made, guarantee matrix to metallic plasma it is effective attract and from
The adjusting of sub- energy carries out pure metal film, the compound ceramic film of different element ratios, function film and has nanometer more
The preparation of the high-quality thin-film of layer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias ladder pipe device (14) transmission, utilizes the shape of movable coil device
The cooperation of shape and magnetic field magnetic line layout, direction, movable coil can also use straight line using 90 degree of classical flexure types
With bending, bending and Straight Combination (magnetic line of force of straight line portion and the magnetic line of force of bending part are tangent, intersect), straight line and straight line
The combination magnetic line of force of straight line portion (two sections intersection), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line with
And the typical loop construction combination such as combination (tangent between three and intersection) of circular arc, straight line and circular arc, circular arc therein and
Straight line portion is determined according to the needs of spatial position and transmission path, realize with the separation of bulky grain defect, make its with compared with
High efficiency of transmission reaches matrix surface, overcome deposition position caused by being designed due to vacuum chamber space and target source layout limit or
Film caused by person's base shape limits deposits problem of non-uniform, carries out the fast deposition of film, multi-stage magnetic field device (12) is right
Bulky grain defect in arc-plasma is filtered elimination, guarantees the uniformity of target ablation, and that improves target utilizes effect
Rate overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound plasma with higher
Efficiency of transmission by movable coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc etc. from
Daughter and high-power impulse magnetron sputtering plasma reach any on any position or sample stage (12) in vacuum chamber (13)
The matrix surface of shape, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (9) control
Compound plasma reduces loss of the compound plasma in vacuum chamber (13), removes the bulky grain in arc-plasma
Defect carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized on movable coil device (9)
The attraction to electronics in arc-plasma and remaining bulky grain may be implemented in positive bias variation, the electric field that positive bias generates, into
And the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and promote arc-plasma in work
Efficiency of transmission in moving-wire coil apparatus (9) eliminates remaining bulky grain defect；Movable coil device (9) selects low-resistance purple
Copper pipe, the diameter of copper pipe, the number of turns of thickness and length foundation movable coil device (9), coil channel diameter, coil shape, line
Circle turn-to-turn away from, vacuum chamber size, the transmission path of compound plasma and transmission range determine；Movable coil installation's power source
(10) positive and negative anodes provide suitable electric current to movable coil device (9) according to magnetic field strength, direction and cooling system, electric current
Input range is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) export suitable magnetic field, makes
The path transmission that compound plasma is set according to movable coil device (9), while guaranteeing to remove remaining bulky grain with
High efficiency of transmission reaches matrix surface, avoids compound plasma loss in vacuum chamber (13), realizes the quick heavy of film
Product；
Arc ion plating target source (3), high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and movable coil dress
(9) are set using direct water-cooling mode, the temperature in the course of work is avoided to increase problem, have external water cooling unit system to provide enough
Cooling water flow and cooling temperature, to guarantee the normal operation of entire vacuum system.
2. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias ladder pipe, special
Sign is that institute's use device further includes the pulse voltage and electricity that grid bias power supply kymographion (6) show that grid bias power supply (1) issues
Waveform is flowed, high-power impulse magnetron sputtering power supply wave shape oscillograph (7) shows high-power impulse magnetron sputtering power supply (4) output
Impulse waveform passes through synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and high-power impulse magnetron sputtering
Power supply (4) makes grid bias power supply impulse waveform and high-power impulse magnetron sputtering impulse waveform according to integral multiple, out of phase and not
With the matching of pulse width, the output waveform of grid bias power supply (1) is adjusted, to multiple from a kind of combination field and liner bias ladder pipe
The plated film ion transmitted in the vacuum deposition method of conjunction is effectively attracted, to multi-stage magnetic field device (12), liner bias
Transmission comes out the bulky grain in arc-plasma and carries out electric field inhibition in ladder pipe device (14) and movable coil device (9),
In matrix surface deposition film and control deposition targets element ratio in the film, realize plasma energy adjusting and
It is possible that remaining bulky grain defect carries out electric field repulsion removing.
3. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias ladder pipe, special
Sign is that the device combines the waveform control of synchronous waveform coalignment (8), active line using single set or more set combinations
The multiple types of coil apparatus (9), multi-stage magnetic field device (12) and liner bias ladder pipe device (14) combine, and realize different wave
Optimized Matching, multi-stage magnetic field, liner bias ladder pipe device and the transmission path in movable coil magnetic field guidance, in vacuum chamber
Any position prepare pure metal film, the compound ceramic film of different element ratio, function film and have nanometer more
The film of layer or gradient-structure.
4. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias ladder pipe, special
Sign is, first carried out using high-power impulse magnetron sputtering power supply (4) pulsed bias power supply of magnetron sputtering combination high voltage into
Row ion implantation and deposition improves the binding force of film and matrix, then using single set or covers the device more and combine using tradition
Magnetically controlled DC sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one or two kinds of above method group
It closes, then applies Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two or more
The compound of depositional mode carries out film deposition, to prepare compound ceramic film, the function of pure metal film, different element ratios
It can film and the film with nanometer multilayer or gradient-structure.
5. a kind of combination field according to claim 1 and the compound vacuum deposition method of liner bias ladder pipe, special
Sign is that it is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer multilayer
Or the film of gradient-structure.
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| US20090200158A1 (en) * | 2006-05-02 | 2009-08-13 | Sheffield Hallam University | High power impulse magnetron sputtering vapour deposition |
| CN104947046A (en) * | 2015-07-28 | 2015-09-30 | 魏永强 | Multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method |
| CN105088150A (en) * | 2015-09-10 | 2015-11-25 | 魏永强 | Multilevel magnetic field arc ion plating method with adjustable transmission directions |
| CN106756824A (en) * | 2017-01-22 | 2017-05-31 | 魏永强 | The multi-stage magnetic field arc ions electroplating method of liner positive bias stairstepping pipe |
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