CN109989042A - A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe - Google Patents
A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe Download PDFInfo
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- 239000010408 film Substances 0.000 claims description 206
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe, belong to technical field of material surface treatment, the present invention is to solve the problems such as bulky grain uses limitation, the loss of Magnetic filter arc-plasma and high-power impulse magnetron sputtering discharge instability to the pollution of film and target in arc ion plating.The inventive system comprises: arc ion plating target source, multi-stage magnetic field device, movable coil device, twin target high-power impulse magnetron sputtering target source, liner bias conical pipe and the devices such as ladder pipe combination unit and line related, grid bias power supply, Waveform Matching device；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, opens plated film power supply, the energy of grid bias power supply adjusting plasma, multi-stage magnetic field device and movable coil device eliminate bulky grain defect and guide the transmission of compound plasma, reduce loss in a vacuum chamber, and preparation technology parameter is arranged.
Description
Technical field
The present invention relates to a kind of combination fields and liner conical pipe and the compound vacuum coating method of ladder pipe, belong to material
Technical field of surface.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Originally magnetron sputtering technique uses direct current supply mode, compared to arc ions electroplating method, do not have bulky grain defect,
The low-temperature sputter deposition of a variety of materials may be implemented, but the ionization level of its sputter material is very low, the power density of sputtering target exists
50W/cm2, the phenomenon that cannot get enough ion populations, causing deposition efficiency very low, be also easy to produce " target poison ing " when film deposits,
The energy of ion institute band is lower simultaneously, makes not fine and close enough (the lag effect in Chang Tianhai reaction magnetocontrol sputtering technique of Thin Film Tissue
[J] vacuum and low temperature, 2003,9 (4): 7-10. should be studied).1999, the V. of Linkoping,Sweden university
Kouznetsov et al. (Kouznetsov V, Mac á k K, Schneider J M, Helmersson U, Petrov I.
A novel pulsed magnetron sputter technique utilizing very high target power
Densities [J] Surf Coat Tech, 1999,122 (2-3): 290-293.) propose that high power pulse magnetic control splashes
Technology (HPPMS) is penetrated, the ionization level of sputter material is improved using higher pulse peak power and lower pulse width,
Target cathode will not increase the cooling requirement of target because of overheat simultaneously.Its peak power is improved compared to conventional DC magnetron sputtering
100 times, about 1000 ~ 3000W/cm2, the density of plasma reaches 1018m-3The order of magnitude, central region ion concentration
Up to 1019m-3The order of magnitude, while the ionization level of sputter material reaches as high as 90% or more, and is free of the highest electricity of current ionization level
Bulky grain defect in arc ion electroplating method.After 2008, each colleges and universities are also started to spread out for high power pulse at home
Research (the high power combined pulsed magnetron sputtering plasma characteristics of Li Xiping and the TiAlN thin film preparation of magnetron sputtering technique
[D];Harbin Institute of Technology, the vibration of 2008. Wuzhongs, Zhu Zongtao, Gong Chunzhi, Tian Xiubo, Yang Shiqin, Li Xiping high
The development and research [J] vacuum of Power Impulse Magnetron sputtering technology, 2009,46 (3): 18-22. and Mu Zongxin, Mu Xiao
East, Wang Chun, Jia Li, Dong Chuan DC power supply couple high power pulse non-balance magnetically controlled sputter ionization property [J] physics
Journal, 2011,60 (1): 422-428.), but since the pulsed discharge of high-power impulse magnetron sputtering technology is unstable,
And target current potential is lower, target metal a large amount of metal ion after ionization is sucked back into target surface, fails to reach matrix surface
The deposition for realizing film, the efficiency for causing film to deposit substantially reduce, and influence it and are further substituted with common magnetron sputtering and electric arc
The paces of ion plating receive certain restrictions in terms of subsequent popularization and application.Although some scholars are to high power pulse magnetic control
The application of sputtering is improved, for example the high power combined pulsed magnetron sputtering ion implantation and deposition method of Chinese patent is (public
The number of opening: CN101838795A, publication date: on September 22nd, 2010) the utilization high pressure that is proposed and impulsive synchronization coalignment fill
The advantages of dividing using high-power impulse magnetron sputtering realizes high-power impulse magnetron sputtering technology in the prominent of field ion implantation
It is broken, but due to the limitation of high voltage power supply, the density for reaching matrix surface depositing ions cannot be too high, otherwise will lead to high-voltage electricity
The damage in source, Ferreira of Portugal's Universidade de Coimbra et al. (Ferreira F, Serra R, Oliveira J C,
Cavaleiro A. Effect of peak target power on the properties of Cr thin films
sputtered by HiPIMS in deep oscillations magnetron sputtering (DOMS) mode
[J] Surf Coat Tech, 2014,258:249-256.) propose the high-power impulse magnetron sputtering of deep oscillation mode
Pulse voltage waveform prepares Cr film, and discovery improves peak power can be such that film turns from the finer and close pattern of column crystal orientation
Become, eliminates the porosity defects of film, the hardness of film increases to 17GPa.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, the Dai Hua of Shanghai Communications University propose adjustable open type single channel and dual-channel electromagnetic coil filter (Dai Hua
Macroscopic particles removal technology research [D] in vacuum cathode arc ion plating layer;Shanghai Communications University, 2009), these methods
Although there is certain effect in terms of filtering and eliminating bulky grain, the efficiency of transmission loss of plasma is serious, makes ion stream
Density substantially reduces.Based on can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent vacuum cathode arc straight tube mistake
The method that straight tube filtering is proposed in filter (publication number: CN1632905, publication date: on June 29th, 2005), but this is dropped again
Low filter effect.In short, relevant researcher is by comparing various Magnetic filter method (Anders A. Approaches
to rid cathodic arc plasmas of macro- and nanoparticles: a review [J]. Surf
Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of cathodic
arc deposition for preparing droplet-free thin films [J]. IEEE Trans Plasma
Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping high transmission after magnetic filter
Efficiency and elimination bulky grain are very difficult to take into account, and drastically influence application of the technology in high-quality thin-film deposition.In addition in base
The electric field suppressing method that bias is used on body, when applying back bias voltage on matrix, electric field will generate row to electronegative bulky grain
Reprimand effect, and then reduce the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich W,
Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma；There are also scholars to use dual-layered baffle plate device (Zhao Y, Lin G, Xiao
J, Lang W, Dong C, Gong J, Sun C. Synthesis of titanium nitride thin films
deposited by a new shielded arc ion plating [J]. Appl Surf Sci, 2011, 257
(13): 5694-5697. influence of the baffle spacing to film surface appearance, bulky grain elimination effect and deposition rate), is had studied
Rule.There are also scholar's (cathodic arc plasma sources and its film of Zhang Tao, Hou Junda, Liu Zhiguo, Zhang Yicong Magnetic filter
Prepare [J] China Surface Engineering, 2002,02): 11-15+20-12.) use for reference Bilek plate method (Bilek M M M,
Yin Y, McKenzie D R, Milne W I A M W I. Ion transport mechanisms in a
filtered cathodic vacuum arc (FCVA) system [C]. Proceedings of the Discharges
and Electrical Insulation in Vacuum, 1996 Proceedings ISDEIV, XVIIth
International Symposium on, 1996:962-966), apply just on the bend pipe of 90 degree of bend pipe magnetic filters
Bias improves the efficiency of transmission of plasma.
It is difficult to ionization in order to solve the problems, such as that magnetron sputtering technique exists in terms of using high-melting-point target, extends existing electricity
Two methods of arc ion plating and magnetron sputtering make full use of high power pulse magnetic control to splash in the respective limitation of target use aspect
Penetrating magnetron sputtering can be with low melting point metal material (such as aluminium, tin) that sputtering sedimentation arc ions electroplating method should not use, polynary
Alloy material (such as alusil alloy), nonmetallic materials (such as graphite) and semiconductor material (such as silicon) (Kelly, P. J.,
J. Hisek, Y. Zhou, R. D. Pilkington, R. D. Arnell. Advanced Coatings Through
Pulsed Magnetron Sputtering. Surface Engineering, 2004,20 (3): 157-162. and
Heister U, Krempel-Hesse J, Szczyrbowski J, Teschner G, Bruch J, Bräuer G.
TwinMag II: Improving an advanced sputtering tool [J]. Vacuum, 2000, 59(2–3):
424-430.), the advantage used in terms of while being plated in high-melting-point and difficult ionization target using arc ions, in conjunction with magnetic filter
Bulky grain is eliminated and Plasma Transport efficiency guarantees, to realize the film of preparation a variety of materials, component ratio and structure.
Summary of the invention
The invention aims to solve, conventional magnetron sputtering technology ionization level and film deposition efficiency be low, high-melting-point target
The problem of limitation and current high-power impulse magnetron sputtering discharge instability and ion resorption for using, conventional arc ion plating side
Method uses high-melting-point target, the pure metal (such as aluminium, tin) of low melting point or multicomponent alloy material (such as AlSi alloy) He Feijin
Belong to material (such as graphite and semiconductor material Si) as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electricity
Transmission efficiency is low for arc plasma, target elements use and uniform ablation limitation, film deposition compact degree and defect problem, vacuum
Deposition position limitation caused by room space and target source layout design, workpiece shapes limitation and different targets are in multi-stage magnetic field device
The problems such as thin film composition caused by the secondary sputtering of residue pollutes, with the pure metal (such as aluminium, tin) or multicomponent alloy of low melting point
Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si etc.) are splashed as high power pulse magnetic control
The target penetrated, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate continual and steady, high ionization level etc. from
Daughter, constraint and bias in conjunction with multi-stage magnetic field filter method and liner bias conical pipe and ladder pipe combination unit own form
The compound action that electric field attracts eliminates the bulky grain defect contained in arc-plasma, at the same guarantee arc-plasma with
Higher efficiency of transmission is by liner bias conical pipe and ladder pipe combines the unit and multi-stage magnetic field filter device, recycling activity
Compound action that the magnetically confined of coil device and itself biasing electric field attract is eliminated from multi-stage magnetic field device and liner bias
The bulky grain defect contained in the arc-plasma that conical pipe and ladder pipe combination unit transmit out, while utilizing active line
The transmission of the compound plasma of coil apparatus control twin target high-power impulse magnetron sputtering and arc ion plating in a vacuum chamber
Direction is realized to the control and regulation of the film deposition and thin film composition on any position substrate work-piece surface in vacuum chamber, is reduced multiple
Plasma is closed in the indoor loss of vacuum, is overcome caused by being limited due to vacuum chamber and target source position limitation or base shape
Film deposits problem of non-uniform, thoroughly removes and passes from multi-stage magnetic field device and liner bias conical pipe and ladder pipe combination unit
It is possible to remaining bulky grain defect in the arc-plasma that output comes, makes workpiece surface downward the case where applying back bias voltage
Ion energy is saved, removes the bulky grain defect in arc-plasma, preparation using the biasing electric field inhibiting effect of matrix surface
Continuously, fine and close high-quality thin-film, while realizing and target elements content addition in film is controlled, reducing the production for using alloys target
Cost, increases the deposition velocity of film and decreases or even eliminates bulky grain defect to film the efficiency of transmission of raising plasma
The adverse effect of microstructure, continuous compact deposits and service performance proposes a kind of combination field and liner conical pipe and rank
Ladder manages compound vacuum coating method.
Device used in the present invention includes grid bias power supply (1), arc power (2), arc ion plating target source (3), twin target
High-power impulse magnetron sputtering power supply (4), twin target high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion
(6), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform coalignment (8), movable coil dress
Set (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source
(13), liner bias conical pipe and ladder pipe combination unit (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber
(17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias conical pipe and ladder pipe combination unit (14) connect liner bias
The cathode output end of power supply (15) opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias conical pipe and ladder pipe combination unit (14) can cooperate multi-stage magnetic field device (12) design liner bias cone
The structure of the outer diameter of shape pipe and ladder pipe combination unit, liner bias conical pipe and ladder pipe combination unit can also cooperate multistage
Magnetic field device (12) design 2 grades of ladder pipes combines with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes with bore
The structure of the combination of shape pipe and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, Ge Jijie
It is connected and fixed between ladder pipe and conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe with
Activity insulation is assembled together between ladder pipe combination unit (14) and multi-stage magnetic field device (12), and apparent surface pollution level is timely
Disassembly cleaning and installation, the inside pipe wall for avoiding multi-stage magnetic field device (12) under linerless board status pollutes and be difficult to clear up asks
Topic, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；It is interior
Serve as a contrast the length of magnetic field at different levels and ladder pipe at different levels of bias conical pipe and ladder pipe combination unit (14) with multi-stage magnetic field device (12)
It is matched with the outlet of conical pipe, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), entrance on the right side of ladder pipe
Internal diameterD IntoGreater than the outer diameter in arc ion plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), according to different targets
It is selected with technological parameter, the machinery resistance to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit
Baffle plate covers；
The selection of the material of multi-stage magnetic field device (12) and liner bias conical pipe and ladder pipe combination unit (14) is nonmagnetic, resistance to clear
304 stainless steel materials of reason, multi-stage magnetic field device (12) determine length, inside and outside according to the diameter of target, cooling, transmission range
Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (14) are according to multi-stage magnetic field device (12)
Internal diameter and the outer diameter in arc ion plating target source (3) determine the outer diameter and inner diameter of conical pipe at inlet and outlet position, further according to length and
Rigidity needs to select suitable thickness, processes according to actual design parameter；
It opens liner grid bias power supply (15), liner bias conical pipe and ladder pipe combination unit (14) keep direct current, pulse, more
Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type can be adjusted
Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees that liner bias conical pipe is attached together with ladder pipe group
It sets (14) to attract bulky grain, depositing ions is repelled, reduction arc-plasma is in pipe in transmission process
Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (15), which is -200 ~+200V,
Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy
Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field
Set the probability of (12) and liner bias conical pipe and ladder pipe combination unit (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias conical pipe and ladder pipe combination unit (14) transmission, utilizes activity
The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types,
Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase
Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and
Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection),
Circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, realize point with bulky grain defect
From, so that it is reached matrix surface with higher efficiency of transmission, it is heavy caused by overcoming due to vacuum chamber space and the design of target source layout
Film caused by the limitation of product position or base shape limit deposits problem of non-uniform, carries out the fast deposition of film, multistage magnetic
Field device (12) is filtered elimination to the bulky grain defect in arc-plasma, guarantees the uniformity of target ablation, improves
The utilization efficiency of target overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound etc.
Gas ions pass through movable coil device (9) with higher efficiency of transmission, while realizing the adjusting to magnetic direction and magnetic field strength,
Pilot arc plasma and twin target high-power impulse magnetron sputtering plasma reach any position in vacuum chamber (13)
Or on sample stage (12) arbitrary shape matrix surface, coil turn, coil-span, shape and the biography of movable coil device (9)
The adjustings such as defeated path control compound plasma, reduce loss of the compound plasma in vacuum chamber (13), remove electric arc
Bulky grain defect in plasma, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized and is lived
Positive bias variation on moving-wire coil apparatus (9), the electric field that positive bias generates may be implemented to electronics in arc-plasma and residual
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device
(9) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (9) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；It is living
The positive and negative anodes of moving winding installation's power source (10) provide conjunction to movable coil device (9) according to magnetic field strength, direction and cooling system
The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) are defeated
Suitable magnetic field out, the path transmission for setting compound plasma according to movable coil device (9) guarantee to remaining big
Matrix surface is reached with high efficiency of transmission while grain is removed, avoids compound plasma loss in vacuum chamber (13), it is real
The fast deposition of existing film；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. is eliminated current using the bipolarity feature of twin target high-power impulse magnetron sputtering power supply
The problem of charge accumulated of high-power impulse magnetron sputtering electric discharge causes sparking and ion resorption, recycle arc ions electroplating method
Realize that high-melting-point difficulty ionization target generates the plasma of continual and steady, high ionization level, twin target high-power impulse magnetron sputtering
Technology realizes the higher metallic ionization level of target by high pressure low-frequency pulse, does not need other auxiliary ionization devices, right
In pure metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as the graphite of low melting point
Do not generate bulky grain defect with semiconductor material Si), can also use two different unit targets or unit and it is polynary, with
And the combination such as two kinds of multicomponent target materials, realize that the plasma of multiple elements design generates, and then various units, polynary and change can be deposited
The film of polymer type and different element ratios；B. arc ion plating target source can make up high-power impulse magnetron sputtering target source
Discharge instability and high-melting-point target be difficult to the limitation of ionization, guarantee that the high density of depositing ions persistently generates；C. due to adopting
With synchronous waveform coalignment, matrix can be made effectively to attract caused by twin target high-power impulse magnetron sputtering target source
Ion reduces high-power impulse magnetron sputtering technology to the resorption effect of produced ion, ensure that film deposition rate, make to sink
The energy of product ion greatly improves；D. by adjusting the technological parameter in twin target high-power impulse magnetron sputtering target source, in conjunction with electricity
The technological parameter in arc ion plating target source, may be implemented the ion ratio of various elements in compound plasma, realizes different elements
The film of ratio deposits；E. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, be utilized
Amplitude, pulse width and the frequency of pulsed bias realize the pinning effect that energetic ion grows film, improve film growth
Texture and stress state, improving film substrate bond strength improves the service performance of film；F. due to eliminating the pure of low melting point
Metal (such as aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material
Si) the application limitation in arc ion plating, avoids the bulky grain defect of low melting point element, original multi-element film may be implemented
The addition of these elements and ratio are adjusted flexibly in preparation process, and prepared film crystal tissue is finer and close, Ke Yijin
The mechanical property of one step raising film；G. it is laid out using the shape of movable coil device and magnetic field magnetic line, the cooperation in direction,
Movable coil can be using 90 degree of classical flexure types, can also be using straight line and bending, bending and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part it is tangent, intersect), straight line and the Straight Combination (magnetic line of force phase of two sections of straight line portions
Hand over), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the combination (three of circular arc, straight line and circular arc
Between tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission road
The needs of diameter are determined, and realize effective control to arc-plasma transmission path, to from multi-stage magnetic field device and liner
The further removing of remaining bulky grain defect, overcomes high power pulse magnetic control in bias conical pipe and ladder pipe combination unit
Sputtering technology discharge instability and ion resorption problem, reduce loss of the compound plasma in vacuum chamber transmission process,
By the guidance in movable coil magnetic field, the efficiency of transmission of compound plasma and the deposition velocity of film are further increased, is overcome
Film caused by deposition position limitation or base shape limit caused by being designed due to vacuum chamber space and target source layout deposits
Problem of non-uniform can realize the preparation of film in the optimum position of vacuum chamber, can also pass through rheostat device, adjusting activity
The series impedance of coil realizes the adjustment to movable coil itself positive bias parameter, realizes to the electricity in arc-plasma
The attraction of son and remaining bulky grain, efficiency of transmission of the Lai Tisheng arc-plasma in movable coil eliminate remaining big
Grain defect, increases the deposition velocity of film；H. multi-stage magnetic field filter device can guarantee electric arc in target by the constraint in magnetic field
The stable motion on surface generates lasting arc-plasma, and so that arc-plasma is existed by the magnetic line of force of multi-stage magnetic field
Both high efficiency of transmission in multi-stage magnetic field device, also change the motion path of arc-plasma and bulky grain defect to realize
Separation, is further reduced the bulky grain defect even being eliminated in arc-plasma；I. liner bias conical pipe and ladder pipe group
It attaches together and sets by the way that direct current, pulse or the compound positive bias of DC pulse can be applied, bulky grain continue or periodically
Effectively attract, depositing ions continue or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage,
Loss of the plasma in pipe in transmission process is reduced, the efficiency of transmission of arc-plasma and sinking for film are further increased
Product speed；J. liner bias conical pipe and ladder pipe combination unit can pass through conical pipe and ladder pipe group by own form
It attaches together the internal diameter variation for setting entrance and exit and conical pipe is combined with the structure that ladder pipe combines the unit, limitation bulky grain lacks
Sunken motion path eliminates the bulky grain defect in arc-plasma, reduces bulky grain by ladder pipe device and reaches deposition
The probability of sample surfaces realizes the mechanical stop shielding to bulky grain, the spirit of liner bias conical pipe and ladder pipe combination unit
The problem of disassembly living, cleaning is convenient, avoids the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, and can be with
After effectively avoiding target from replacing, different targets cause the pollution of thin film composition to the secondary sputtering of liner ladder pipe pollutant；k.
Pulsed bias power supply repels effect by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency, using the inhibition of electric field
It should realize and remaining bulky grain defect eliminate and the adjusting of compound plasma energy is optimized；L. prepared film
Microstructure and properties can be adjusted by pulsed bias parameter, using the type of pulsed bias, amplitude, pulse width and
Frequency realizes the pinning effect that energetic ion grows film, improves the texture and stress state of film growth, improves knot
Intensity is closed, the service performance of film is improved；M. by utilizing compound true of a kind of combination field and liner conical pipe and ladder pipe
Film prepared by empty film plating process eliminates the bulky grain defect in film, reduces compound plasma in filter device
With the loss in vacuum chamber, the service efficiency of compound plasma is improved, realizes the quick preparation of film, and can be guaranteed thin
Film texture and microstructure are finer and close, are conducive to the service performance for further increasing film.
A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe, the device can singly cover or
More set combinations, and combine the waveform control of synchronous waveform coalignment (8), multi-stage magnetic field device (12), liner bias conical pipe
It is combined with ladder pipe combination unit (14) and the multiple types of movable coil device (9), realizes the Optimized Matching, more of different wave
The guidance of the transmission path in grade magnetic field and movable coil magnetic field, prepares pure metal film, difference in vacuum indoor any position
Compound ceramic film, function film and the film with nanometer multilayer or gradient-structure of element ratio, can also be using single
Set covers the device more and combines using Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulse yin
The one or two kinds of above method combination of polar arc, then Dc bias, pulsed bias or the compound bias of DC pulse are used, realize two
Kind or the compound of two or more depositional modes carry out film deposition, prepare the chemical combination of pure metal film, different element ratios
Object ceramic membrane, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the 1 of a kind of combination field of the present invention and liner conical pipe and the compound vacuum coating method of ladder pipe
Kind scheme of erection；Fig. 2 is the 2 of a kind of combination field of the present invention and liner conical pipe and the compound vacuum coating method of ladder pipe
Kind scheme of erection；Fig. 3 is 6 kinds of topology layouts of movable coil in the 1st kind of scheme of erection；Fig. 4 is movable in the 2nd kind of scheme of erection
7 kinds of topology layouts of coil；Fig. 5 is the typical structure schematic diagram of liner bias conical pipe and ladder pipe combination unit；Fig. 6 is waveform
Simultaneously match device, twin target high-power impulse magnetron sputtering mains voltage waveform, grid bias power supply impulse waveform and twin target are high
Power Impulse Magnetron sputters the matching figure of unipolarity single pulse waveforms integral multiple, out of phase and different pulse widths.
Specific embodiment
Specific embodiment 1: illustrate present embodiment below with reference to Fig. 1-6, a kind of combination field of present embodiment and interior
Lining conical pipe and the compound vacuum coating method institute use device of ladder pipe include grid bias power supply (1), arc power (2), electric arc from
Son plating target source (3), twin target high-power impulse magnetron sputtering power supply (4), twin target high-power impulse magnetron sputtering target source (5),
Grid bias power supply kymographion (6), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7), synchronous waveform matching
Device (8), movable coil device (9), movable coil installation's power source (10), rheostat device (11), multi-stage magnetic field device (12),
Multi-stage magnetic field installation's power source (13), liner bias conical pipe and ladder pipe combine the unit (14), liner grid bias power supply (15), sample
Platform (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias conical pipe and ladder pipe combination unit (14) connect liner bias
The cathode output end of power supply (15) opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias conical pipe and ladder pipe combination unit (14) can cooperate multi-stage magnetic field device (12) design liner bias cone
The structure of the outer diameter of shape pipe and ladder pipe combination unit, liner bias conical pipe and ladder pipe combination unit can also cooperate multistage
Magnetic field device (12) design 2 grades of ladder pipes combines with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes with bore
The structure of the combination of shape pipe and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, Ge Jijie
It is connected and fixed between ladder pipe and conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe with
Activity insulation is assembled together between ladder pipe combination unit (14) and multi-stage magnetic field device (12), and apparent surface pollution level is timely
Disassembly cleaning and installation, the inside pipe wall for avoiding multi-stage magnetic field device (12) under linerless board status pollutes and be difficult to clear up asks
Topic, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；It is interior
Serve as a contrast the length of magnetic field at different levels and ladder pipe at different levels of bias conical pipe and ladder pipe combination unit (14) with multi-stage magnetic field device (12)
It is matched with the outlet of conical pipe, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), entrance on the right side of ladder pipe
Internal diameterD IntoGreater than the outer diameter in arc ion plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), according to different targets
It is selected with technological parameter, the machinery resistance to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit
The elimination effect (as shown in Figure 5) that baffle plate covers；
The selection of the material of multi-stage magnetic field device (12) and liner bias conical pipe and ladder pipe combination unit (14) is nonmagnetic, resistance to clear
304 stainless steel materials of reason, multi-stage magnetic field device (12) determine length, inside and outside according to the diameter of target, cooling, transmission range
Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (14) are according to multi-stage magnetic field device (12)
Internal diameter and the outer diameter in arc ion plating target source (3) determine the outer diameter and inner diameter of conical pipe at inlet and outlet position, further according to length and
Rigidity needs to select suitable thickness, processes according to actual design parameter；
It opens liner grid bias power supply (15), liner bias conical pipe and ladder pipe combination unit (14) keep direct current, pulse, more
Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type can be adjusted
Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees that liner bias conical pipe is attached together with ladder pipe group
It sets (14) to attract bulky grain, depositing ions is repelled, reduction arc-plasma is in pipe in transmission process
Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (15), which is -200 ~+200V,
Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy
Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field
Set the probability of (12) and liner bias conical pipe and ladder pipe combination unit (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias conical pipe and ladder pipe combination unit (14) transmission, utilizes activity
The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types,
Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase
Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and
Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection),
Circular arc and straight line portion therein are determined (as shown in Figs 1-4) according to the needs of spatial position and transmission path, realize with
The separation of bulky grain defect makes it reach matrix surface with higher efficiency of transmission, overcomes due to vacuum chamber space and target source cloth
Film caused by the limitation of deposition position caused by office designs or base shape limit deposits problem of non-uniform, carries out the fast of film
Speed deposition, multi-stage magnetic field device (12) and liner bias conical pipe and ladder pipe combination unit (14) are in arc-plasma
Bulky grain defect is filtered elimination, guarantees the uniformity of target ablation, improves the utilization efficiency of target, overcome high power arteries and veins
Magnetron sputtering technique discharge instability and ion resorption problem are rushed, compound plasma is made to pass through activity with higher efficiency of transmission
Coil device (9), while realizing the adjusting to magnetic direction and magnetic field strength, pilot arc plasma and twin target high power
Pulsed magnetron sputtering plasma reaches the matrix table of arbitrary shape on any position or sample stage (12) in vacuum chamber (13)
Face, the adjustings such as coil turn, coil-span, shape and the transmission path of movable coil device (9) control compound plasma,
Loss of the compound plasma in vacuum chamber (13) is reduced, the bulky grain defect in arc-plasma is removed, carries out film
Fast deposition；The output resistance of standardsizing rheostat device (11) realizes the positive bias variation on movable coil device (9), just
The attraction to electronics in arc-plasma and remaining bulky grain may be implemented in the electric field that bias generates, and then increases movable coil
The ion populations of the arc-plasma exported in device (9) increase, and promote arc-plasma in movable coil device (9)
Efficiency of transmission, eliminate remaining bulky grain defect；The low-resistance copper tube of movable coil device (9) selection, the diameter of copper pipe,
Thickness and length are big according to the number of turns of movable coil device (9), coil channel diameter, coil shape, coil turn spacing, vacuum chamber
Small, compound plasma transmission path and transmission range determine；The positive and negative anodes of movable coil installation's power source (10) are according to magnetic
Field intensity, direction and cooling system provide suitable electric current to movable coil device (9), and the input range of electric current is 0 ~ 2000A,
The stability and movable coil device (9) for guaranteeing entire vacuum system export suitable magnetic field, make compound plasma according to work
The path transmission of moving-wire coil apparatus (9) setting guarantees to reach base while removing remaining bulky grain with high efficiency of transmission
Body surface face avoids compound plasma loss in vacuum chamber (13), realizes the fast deposition of film；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
The output waveform of grid bias power supply (1) is direct current, pulse, DC pulse is compound, multiple-pulse is compound or bipolarity arteries and veins
Punching.
Output direct current, pulse, the DC pulse of arc power (2) are compound or multiple-pulse is compound.
Arc ion plating target source (3) using high-melting-point difficulty ionization target, the pure metal of low melting point or multicomponent alloy material and
Nonmetallic materials (such as graphite), twin target high-power impulse magnetron sputtering target source (5) using low melting point pure metal (such as
Aluminium, tin) or multicomponent alloy material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si), it can make
With single target, multiple targets or composition target, carry out pure metal film, the compound ceramic film of different element ratios, function film,
Multi-component multi-layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe, make full use of twin target Gao Gong
The charge accumulated that the bipolarity feature of rate pulsed magnetron sputtering power supply eliminates current high-power impulse magnetron sputtering electric discharge causes to beat
Fire and the problem of ion resorption, recycle arc ions electroplating method realize high-melting-point difficulty ionization target generate it is continual and steady, high from
The plasma of rate, twin target high-power impulse magnetron sputtering technology realize the higher metal of target by high pressure low-frequency pulse
Particle ionization level does not need other auxiliary ionization devices, for the pure metal (such as aluminium, tin) or multicomponent alloy material of low melting point
Material (such as AlSi alloy) and nonmetallic materials (such as graphite and semiconductor material Si) do not generate bulky grain defect, can also adopt
Combined with two different unit targets or unit and polynary and two kinds of multicomponent target materials etc., realize multiple elements design it is equal from
Daughter generates, and then can deposit the film of various units, polynary and type of compounds and different element ratios；Wave is utilized simultaneously
Just as applied back bias voltage and twin target high-power impulse magnetron sputtering technological parameter on step coalignment control workpiece, be conducive to
Improve the Potential Distributing in twin target high-power impulse magnetron sputtering target source plasma section, sufficiently attracts twin target high power arteries and veins
The ion of magnetron sputtering generation is rushed to workpiece motion s, effectively solution high-power impulse magnetron sputtering intermediate ion resorption effect causes thin
The low problem of film deposition efficiency；Stablize metal plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously
Body makes up the defect of high-power impulse magnetron sputtering technology discharge instability, is conducive to high ionization level ion in workpiece surface
Chemosynthesis reaction prepares the compound ceramic films of different element ratios, function film, multi-component multi-layer, superlattices and has
The film or pure metal film of gradient-structure.It is laid out using the shape and magnetic field magnetic line of movable coil device, the cooperation in direction,
Movable coil can be using 90 degree of classical flexure types, can also be using straight line and bending, bending and Straight Combination (straight line portion
The magnetic line of force and the magnetic line of force of bending part it is tangent, intersect), straight line and the Straight Combination (magnetic line of force phase of two sections of straight line portions
Hand over), the combination (three sections of intersections and tangent combination) of straight line, circular arc and straight line and the combination (three of circular arc, straight line and circular arc
Between tangent and intersection) etc. typical loop construction combination, circular arc and straight line portion therein are according to spatial position and transmission road
The needs of diameter are determined, and are realized to arc-plasma and twin target high-power impulse magnetron sputtering Plasma Transport path
Effective control, to the electric arc etc. for transmitting out from multi-stage magnetic field device and liner bias conical pipe and ladder pipe combination unit
Remaining bulky grain defect is purged in gas ions, overcomes high-power impulse magnetron sputtering technology discharge instability and ion returns
Suction problem reduces loss of the compound plasma in vacuum chamber transmission process, by the guidance in movable coil magnetic field, further
The efficiency of transmission of compound plasma and the deposition velocity of film are improved, is overcome since vacuum chamber space and the design of target source layout are drawn
Film caused by the deposition position limitation risen or base shape limit deposits problem of non-uniform, can be in the optimum bit of vacuum chamber
The preparation for realizing film is set, the series impedance of movable coil can also be adjusted by rheostat device, realized to movable coil
The attraction to electronics and remaining bulky grain in arc-plasma, Lai Tisheng electric arc are realized in the adjustment of itself positive bias parameter
Efficiency of transmission of the plasma in movable coil eliminates remaining bulky grain defect, increases the deposition velocity of film；Using more
Grade magnetic filtering device guarantees that electric arc in the stable motion of target material surface, generates lasting arc plasma by magnetically confined
Body, and high efficiency of transmission of the arc-plasma in multi-stage magnetic field device, also change electric arc are made by the magnetic line of force of multi-stage magnetic field
Plasma and the motion path of bulky grain defect are further reduced come the separation both realized and even are eliminated arc-plasma
In bulky grain defect；It is compound using liner bias conical pipe and ladder pipe combination unit application direct current, pulse or DC pulse
Positive bias, to bulky grain carry out continue or periodically effectively attract, effectively avoid bulky grain caused by low melting material
Problem continue to depositing ions or periodically repel, can also be vibrated by the bipolar pulse of positive back bias voltage, reduced
Loss of the plasma in pipe in transmission process further increases the efficiency of transmission of arc-plasma and the deposition speed of film
Degree, liner bias conical pipe and ladder pipe combination unit can be combined the unit by own form by conical pipe and ladder pipe
The variation of the internal diameter in entrance and exit and conical pipe are combined with the structure that ladder pipe combines the unit, and limit the fortune of bulky grain defect
The bulky grain defect in arc-plasma is eliminated in dynamic path, is reduced bulky grain by ladder pipe device and is reached deposited samples table
The probability in face, realization shield the mechanical stop of bulky grain, the flexible disassembly of liner bias conical pipe and ladder pipe combination unit,
The problem of cleaning is convenient, avoids the inside pipe wall pollution cleaning of multi-stage magnetic field device under linerless board status, and can effectively keep away
After exempting from target replacement, different targets cause the pollution of thin film composition to the secondary sputtering of liner ladder pipe pollutant；Pulsed bias
Power supply utilizes the inhibition repelling effect realization pair of electric field by adjusting pulse pattern, pulse amplitude, pulse width and pulse frequency
Remaining bulky grain defect eliminate and optimizes to the adjusting of compound plasma energy, improves plasma near matrix
Section Potential Distributing sufficiently attracts compound plasma to workpiece motion s, realizes the fast deposition of film；Prepared film it is micro-
Seeing structure and performance can be adjusted by pulsed bias parameter, utilize the type of pulsed bias, amplitude, pulse width and frequency
Rate realizes the pinning effect that energetic ion grows film, improves the texture and stress state of film growth, improves and combines
Intensity improves the service performance of film；Also stablize metal lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously
Plasma is conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepares the compound of different element ratios
Ceramic membrane, function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure；By utilizing one
Film prepared by kind combination field and liner conical pipe and the compound vacuum coating method of ladder pipe, eliminates big in film
Grain defect reduces loss of the compound plasma in filter device and vacuum chamber, avoids different target replacements and causes
Pollution of the inner lining apparatus surface residues to film, improve the service efficiency of compound plasma, realize the quick of film
Preparation, the Energy distribution of compound plasma is optimized using pulsed bias, and can guarantee film crystal tissue and microcosmic knot
Structure is finer and close, is conducive to the service performance for further increasing film.
Specific embodiment 2: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, twin target high-power impulse magnetron sputtering power supply (4) exports the integer for the period of pulse pulse being exported for grid bias power supply (1)
Times, as shown in fig. 6, the pulse period of twin target high-power impulse magnetron sputtering power supply (4) output is grid bias power supply (1) output
8 times of pulse period, technical arrangement plan carry out film deposition, and preparation has different stress, microstructure and element ratio
The multilayer films of example, other are identical as embodiment one.
Specific embodiment 3: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, the bias pulse of twin target high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output
Waveform phase is adjustable, as shown in fig. 6, in same pulse width, different phase differences makes two power supply output pulse waveforms can be with
All it is overlapped, partially overlaps or is not overlapped, thus according to the Proper Match of two power pulses of process choice of film deposition, work
The adjustment of skill parameter, carries out film deposition, and preparing has the multilayered structure of different stress, microstructure and element ratio thin
Film, other are identical as embodiment one.
Specific embodiment 4: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, the pulse of twin target high-power impulse magnetron sputtering power supply (4) output high-power pulse and grid bias power supply (1) output pulse
Width is independently adjustable, as shown in fig. 6, after different pulse widths cover the output pulse waveform of two power supplys can with the former
Person, the latter cover the former or are completely coincident, technical arrangement plan, carry out film deposition, and preparation has different stress, microcosmic
The multilayer films of structure and element ratio, other are identical as embodiment one.
Specific embodiment 5: present embodiment and embodiment one the difference is that, the device further include: step
Three, can in conjunction with Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc one kind or
Two or more method combinations, then apply Dc bias, pulsed bias, the compound bias of DC pulse or bipolar pulse on workpiece
Biasing device carries out film deposition, come prepare pure metal film, the compound ceramic film of different element ratio, function film and
High-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 6: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and twin target high power pulse magnetic control can be first used in step 2
Shielding power supply (4) carry out magnetron sputtering combination high voltage pulsed bias power supply carry out ion implantation and deposition, improve film and
Then the binding force of matrix carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microcosmic
The multilayer films of structure and element ratio, other are identical as embodiment two.
Specific embodiment 7: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and twin target high power pulse magnetic control can be first used in step 2
Shielding power supply (4) carry out magnetron sputtering combination high voltage pulsed bias power supply carry out ion implantation and deposition, improve film and
Then the binding force of matrix carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microcosmic
The multilayer films of structure and element ratio, other are identical as embodiment three.
Specific embodiment 8: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and twin target high power pulse magnetic control can be first used in step 2
Shielding power supply (4) carry out magnetron sputtering combination high voltage pulsed bias power supply carry out ion implantation and deposition, improve film and
Then the binding force of matrix carries out step 3, execute step 2 and step 3 repeatedly, and preparation has different stress, microcosmic
The multilayer films of structure and element ratio, other are identical as embodiment four.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
Open, twin target high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity multiple-pulse, then with the period be grid bias power supply
(1) cooperation of pulse is exported, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, no
The matching of same-phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation is answered with difference
The multilayer films of power state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 10: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is unipolarity single hop depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, then is with the period
Grid bias power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform
The matching of integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation
Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 11: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is unipolarity single hop depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillation
Pulse voltage can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity
The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered
Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can
With identical as stage pulse, difference also can choose, the deep oscillating impulse stage also can take up the entire pulse period, form deep vibration
Pulse voltage mode is swung, then is the cooperation of grid bias power supply (1) output pulse with the period, grid bias power supply impulse waveform and twin target are high
Power Impulse Magnetron sputters the matching of impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technique is joined
Number adjustment, carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio,
He is identical as embodiment one.
Specific embodiment 12: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is unipolarity multistage depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, then is with the period
Grid bias power supply (1) exports the cooperation of pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform
The matching of integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation
Multilayer films with different stress, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 13: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is unipolarity multistage depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep oscillation
Pulsed bias can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking equity
The adverse effect of plasma discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition is answered
Power can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of each section of deep oscillation pulse voltage
Value can be identical as stage pulse, also can choose difference, between each other can also be using same or different deep oscillation arteries and veins
Rush voltage magnitude, the amplitude of deep oscillation pulse voltage can also be adjusted to different or phasic Chang amplitude, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 14: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is bipolarity pulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein the whole electricity of ending phase
Pressure amplitude value, advantageously reduce target surface potential accumulation, eliminate spark phenomenon, go on smoothly the electric discharge of next pulse, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 9: present embodiment and embodiment one the difference is that, a kind of combination field and interior
The lining conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
Multi-stage magnetic field device (12) opens liner grid bias power supply (15) and adjusts liner bias conical pipe and ladder pipe combination unit (14)
Bias opens movable coil installation's power source (10) and adjusts movable coil device (9), the output electricity of standardsizing rheostat device (10)
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
Open, twin target high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity multiple-pulse, then with the period be grid bias power supply
(1) cooperation of pulse is exported, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, no
The matching of same-phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation is answered with difference
The multilayer films of power state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 15: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
Open, twin target high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity monopole single hop depth oscillating impulse, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 16: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is bipolarity monopole single hop depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep
Oscillating impulse bias can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking
The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition
Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage
Value can also be adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage,
Deep oscillating impulse can occur in the positive pulse stage, then be the cooperation of grid bias power supply (1) output pulse, grid bias power supply arteries and veins with the period
The matching of waveform from twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths is rushed,
As shown in fig. 6, technical arrangement plan, carries out film deposition, preparing has different stress, microstructure and element ratio
Multilayer films, other are identical as embodiment one.
Specific embodiment 17: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
Open, twin target high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity monopole multistage depth oscillating impulse, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 18: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is bipolarity monopole multistage depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep
Oscillating impulse bias can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking
The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition
Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage
Value can be identical as stage pulse, also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to it is different or
Person's phasic Chang amplitude deep oscillating impulse can also occur in the negative pulse stage, deep vibration can also occur in the positive pulse stage
Pulse is swung, then is the cooperation of grid bias power supply (1) output pulse, grid bias power supply impulse waveform and twin target high power pulse with the period
The matching of magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, into
Row film deposition, prepares the multilayer films with different stress, microstructure and element ratio, other and embodiment party
Formula one is identical.
Specific embodiment 19: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
Open, twin target high-power impulse magnetron sputtering power supply (4) export pulse be bipolarity the two poles of the earth single hop depth oscillating impulse, then with week
Phase is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and the pulse of twin target high-power impulse magnetron sputtering
The matching of waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition,
The multilayer films with different stress, microstructure and element ratio are prepared, other are identical as embodiment one.
Specific embodiment 20: present embodiment and embodiment one the difference is that, a kind of combination field and
The liner conical pipe vacuum coating method compound with ladder pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5) and is adjusted
It saves multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit (14)
Bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) output electricity
Resistance controls grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4) simultaneously by synchronous waveform coalignment (8)
It opens, it is bipolarity the two poles of the earth single hop depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, wherein deep
Oscillating impulse bias can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking
The adverse effect of plasma electric discharge can also be opened in centre, be conducive to improve plasma density, adjustment film deposition
Stress, can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, the width of deep oscillation pulse voltage
Value can be identical as stage pulse, also can choose difference, the amplitude of deep oscillation pulse voltage can also be adjusted to it is different or
Person's phasic Chang amplitude, then with the period be the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and twin target
The matching of high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technique
Parameter adjustment, carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio,
Other are identical as embodiment one.
Specific embodiment 21: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with ladder pipe with liner conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5)
It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit
(14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated
Resistance out, by synchronous waveform coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4)
It opens simultaneously, it is bipolarity the two poles of the earth multistage depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse, then
It is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering with the period
The matching of impulse waveform integral multiple, out of phase and different pulse widths, as shown in fig. 6, technical arrangement plan, it is heavy to carry out film
Product prepares the multilayer films with different stress, microstructure and element ratio, other and one phase of embodiment
Together.
Specific embodiment 22: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with ladder pipe with liner conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5)
It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit
(14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated
Resistance out, by synchronous waveform coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4)
It opens simultaneously, it is bipolarity the two poles of the earth multistage depth oscillating impulse that twin target high-power impulse magnetron sputtering power supply (4), which exports pulse,
Middle depth oscillating impulse bias can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce
The adverse effect that plasma of striking sparks discharges can also be opened in centre, be conducive to improve plasma density, be adjusted film
The stress of deposition can also be opened in ending phase, be conducive to going on smoothly for next stage discharge, deep oscillation pulse voltage
Amplitude can be identical as stage pulse, also can choose difference, the amplitude of each section of deep oscillation pulse voltage can be with pulse rank
Duan Xiangtong also can choose difference, can also use same or different deep oscillation pulse voltage amplitude between each other, deep to shake
The amplitude for swinging pulse voltage can also be adjusted to different or phasic Chang amplitude, then defeated for grid bias power supply (1) with the period
The cooperation of pulse out, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, different phases
The matching of position and different pulse widths, as shown in fig. 6, technical arrangement plan, carries out film deposition, preparation has different stress shapes
The multilayer films of state, microstructure and element ratio, other are identical as embodiment one.
Specific embodiment 23: present embodiment and embodiment one the difference is that, a kind of combination field
The vacuum coating method compound with ladder pipe with liner conical pipe is connect, and is opened arc power (2), is opened multi-stage magnetic field power supply (5)
It adjusts multi-stage magnetic field device (12), opens liner grid bias power supply (15) and adjust liner bias conical pipe and ladder pipe combination unit
(14) bias, open movable coil installation's power source (10) adjust movable coil device (9), standardsizing rheostat device (10) it is defeated
Resistance out, by synchronous waveform coalignment (8) control grid bias power supply (1) and twin target high-power impulse magnetron sputtering power supply (4)
Open simultaneously, twin target high-power impulse magnetron sputtering power supply (4) export pulse be unipolarity pulse, unipolarity multiple-pulse,
Unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolarity pulse, bipolarity multiple-pulse, bipolarity list
Pole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolarity the two poles of the earth single hop depth oscillating impulse, bipolarity the two poles of the earth
The two or more combination of the operating mode of multistage depth oscillating impulse, then pulse is exported with the period for grid bias power supply (1)
Cooperation, grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and not
With the matching of pulse width, as shown in fig. 6, technical arrangement plan, film deposition is carried out, preparation has different stress, micro-
The multilayer films of structure and element ratio are seen, other are identical as embodiment one.
Claims (5)
1. a kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe, which is characterized in that the device packet
Include grid bias power supply (1), arc power (2), arc ion plating target source (3), twin target high-power impulse magnetron sputtering power supply (4), twin
Raw target high-power impulse magnetron sputtering target source (5), grid bias power supply kymographion (6), twin target high-power impulse magnetron sputtering
Power supply wave shape oscillograph (7), movable coil device (9), movable coil installation's power source (10), becomes synchronous waveform coalignment (8)
Resistance device device (11), multi-stage magnetic field device (12), multi-stage magnetic field installation's power source (13), liner bias conical pipe are combined with ladder pipe
Device (14), liner grid bias power supply (15), sample stage (16) and vacuum chamber (17)；
In the device:
Substrate work-piece to be processed is placed on the sample stage (16) in vacuum chamber (17), arc ion plating target source (3), twin target Gao Gong
Mutually insulated between rate pulsed magnetron sputtering target source (5), movable coil device (9) and vacuum chamber (17), workpiece are placed on sample
Platform (16), sample stage (16) connect the cathode output end of grid bias power supply (1), arc ion plating target source (3) and twin target high power arteries and veins
It rushes magnetic controlled sputtering target source (5) to be mounted on vacuum chamber (17), connects arc power (2) and twin target high-power impulse magnetron sputtering respectively
The cathode output end of power supply (4), one end ground connection of twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) are another
End connection twin target high-power impulse magnetron sputtering power supply (4) output end, movable coil device (9) by flange port just
Negative input connects movable coil installation's power source (10), and positive and negative anodes connection can be determined according to output magnetic direction, becomes
Resistance device device (11) is connected with movable coil device (9), in the circuit of access and movable coil installation's power source (10), grid bias power supply
(1) cathode connects sample stage (16), and one end ground connection of grid bias power supply kymographion (6), the other end connects grid bias power supply (1)
Output end, the magnetic fields at different levels of multi-stage magnetic field device (12) connect each output end of multi-stage magnetic field installation's power source (13), positive and negative anodes
Connection can be determined according to output magnetic direction, and liner bias conical pipe and ladder pipe combination unit (14) connect liner bias
The cathode output end of power supply (15) opens power supply total control switch and external water-cooling circulating system；
Film deposition: it will be vacuumized in vacuum chamber (17), to the vacuum degree in vacuum chamber (17) less than 10-4When Pa, it is passed through work
Gas opens grid bias power supply (1) and grid bias power supply kymographion (12), grid bias power supply (1) can be to 0.01Pa~10Pa
Direct current, pulse, multiple-pulse, DC pulse be compound or bipolar pulse bias, the bias amplitude of output, pulse frequency and pulse
Width adjusting, the peak voltage that grid bias power supply (1) exports pulse is 0~1.2kV, and pulse frequency is 0Hz~80kHz, pulse
Width 1 ~ 90%, 0 ~ 400A of operating current, peak power output 200kW；
It opens synchronous waveform coalignment (8), the wave of grid bias power supply (1) output is shown using grid bias power supply kymographion (6)
Shape, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high-power impulse magnetron sputtering power supply
(4) output waveform controls grid bias power supply (1) and twin by synchronous triggering signal that synchronous waveform coalignment (8) export
Raw target high-power impulse magnetron sputtering power supply (4) work；
It opens arc power (2), the surface in arc ion plating target source (3) is cleaned by the spots moving of electric arc, adjusting needs
The technological parameter wanted, the current value of arc power (2) output are 10 ~ 300A, peak power output 12kW；
It opens multi-stage magnetic field installation's power source (13), adjusts multi-stage magnetic field device (12) by multi-stage magnetic field installation's power source (13), protect
It holds arc-plasma to stablize generation in arc ion plating target source (3) and be filtered elimination to bulky grain defect, guarantees target
The uniformity of ablation improves the utilization efficiency of target, fills arc-plasma by multi-stage magnetic field with higher efficiency of transmission
It sets (12), multi-stage magnetic field device (12) uses the red copper wire of surface insulation, and foundation determines the straight of line by electric current and magnetic field strength
Diameter and the number of turns, multi-stage magnetic field installation's power source (13) are independently powered to magnetic fields at different levels, realize the Independent adjustable in magnetic fields at different levels, dress
After setting structure determination, each of multi-stage magnetic field device (12) output is adjusted by the output electric current of multi-stage magnetic field installation's power source (13)
Grade magnetic direction and intensity；
Liner bias conical pipe and ladder pipe combination unit (14) can cooperate multi-stage magnetic field device (12) design liner bias cone
The structure of the outer diameter of shape pipe and ladder pipe combination unit, liner bias conical pipe and ladder pipe combination unit can also cooperate multistage
Magnetic field device (12) design 2 grades of ladder pipes combines with conical pipe, 1 grade of ladder pipe is combined with conical pipe or 3 grades of ladder pipes with bore
The structure of the combination of shape pipe and the above ladder pipe, gradient difference and inlet and outlet are laid out and combine the difference of taper passage, Ge Jijie
It is connected and fixed between ladder pipe and conical pipe, is fixed by the rivet interlacement and position of magnetism-free stainless steel；Liner bias conical pipe with
Activity insulation is assembled together between ladder pipe combination unit (14) and multi-stage magnetic field device (12), and apparent surface pollution level is timely
Disassembly cleaning and installation, the inside pipe wall for avoiding multi-stage magnetic field device (12) under linerless board status pollutes and be difficult to clear up asks
Topic, and it is possible to prevente effectively from after target replacement the secondary sputtering of liner ladder pipe pollutant cause the pollution of thin film composition；It is interior
Serve as a contrast the length of magnetic field at different levels and ladder pipe at different levels of bias conical pipe and ladder pipe combination unit (14) with multi-stage magnetic field device (12)
It is matched with the outlet of conical pipe, ladder length of tubeHIt is identical with the length of multi-stage magnetic field device (12), entrance on the right side of ladder pipe
Internal diameterD IntoGreater than the outer diameter in arc ion plating target source (3), and it is less than the internal diameter of multi-stage magnetic field device (12), according to different targets
It is selected with technological parameter, the machinery resistance to bulky grain may be implemented by the variation of the internal diameter in ladder pipe entrance and exit
The elimination effect that baffle plate covers；
The selection of the material of multi-stage magnetic field device (12) and liner bias conical pipe and ladder pipe combination unit (14) is nonmagnetic, resistance to clear
304 stainless steel materials of reason, multi-stage magnetic field device (12) determine length, inside and outside according to the diameter of target, cooling, transmission range
Diameter, thickness, magnetic field the number of turns and direction, liner bias conical pipe and ladder pipe combination unit (14) are according to multi-stage magnetic field device (12)
Internal diameter and the outer diameter in arc ion plating target source (3) determine the outer diameter and inner diameter of conical pipe at inlet and outlet position, further according to length and
Rigidity needs to select suitable thickness, processes according to actual design parameter；
It opens liner grid bias power supply (15), liner bias conical pipe and ladder pipe combination unit (14) keep direct current, pulse, more
Pulse, DC pulse be compound or bipolar pulse bias, and wherein pulse, multiple-pulse or bipolar pulse biased type can be adjusted
Pulse frequency, pulse width and pulse pattern are saved, the adjustment of output voltage guarantees that liner bias conical pipe is attached together with ladder pipe group
It sets (14) to attract bulky grain, depositing ions is repelled, reduction arc-plasma is in pipe in transmission process
Loss reduces the bulky grain defect even being eliminated in arc-plasma, improves the efficiency of transmission and film of arc-plasma
Deposition velocity, it is direct current, pulse, multiple-pulse, direct current that the voltage parameter of liner grid bias power supply (15), which is -200 ~+200V,
Pulse is compound or Bipolar pulse power, wherein the adjustable pulse frequency of pulse pattern, pulse width and pulse pattern, heavy
Periodical or continual and steady attraction is generated during product to bulky grain defect, greatly reduces bulky grain and is filled by multi-stage magnetic field
Set the probability of (12) and liner bias conical pipe and ladder pipe combination unit (14)；
It opens twin target high-power impulse magnetron sputtering power supply (4), first passes through the pre- ionization of direct current build-up of luminance, adjust twin target high power
Technological parameter needed for pulsed magnetron sputtering target source (5), twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) display
The impulse waveform of twin target high-power impulse magnetron sputtering power supply (4) output, twin target high-power impulse magnetron sputtering power supply (4)
Using unipolarity pulse, unipolarity multiple-pulse, unipolarity single hop depth oscillating impulse, unipolarity multistage depth oscillating impulse, bipolar
It is property pulse, bipolarity multiple-pulse, bipolarity monopole single hop depth oscillating impulse, bipolarity monopole multistage depth oscillating impulse, bipolar
Property the two poles of the earth single hop depth oscillating impulses, bipolarity the two poles of the earth multistage depth oscillating impulse operating mode, output power 100W ~ 500kW, frequency
0~10kHz of rate, peak point current 10A~5000A, positive negative pulse stuffing width 1 μ s~3000 μ s, operating voltage 100V~4000V, just
Negative pulse is set to the 5 μ s of μ s~3000, then selects twin target high power according to twin target type, size and depositing operation
Operating voltage, peak point current, positive negative pulse stuffing width and the interval of pulsed magnetron sputtering target source (5) output generate stable polynary
Compound plasma adjusts the element ratio of twin target in the film；Twin target high-power impulse magnetron sputtering power supply (4)
Pulse voltage, each section of duty ratio, frequency and deep waveform can be with Independent adjustables, wherein unipolarity multiple-pulse, unipolarity single hop
Deep oscillating impulse, the adjustable high power build-up of luminance pulse voltage amplitude of unipolarity multistage depth oscillating impulse and waveform pattern, make twin
Raw target high-power impulse magnetron sputtering target source (5) quickly enter the mode of abnormal glow discharge, pass through the short of crest value of impulse voltage
It temporarily improves increase the target current in twin target high-power impulse magnetron sputtering target source (5) rapidly, increases high power pulse magnetic
The plasma density and ionization level of sputtering are controlled, twin target high-power impulse magnetron sputtering power supply (4) enters normal high later
The discharge condition of the normal low voltage and high current of Power Impulse Magnetron sputtering, can also can be changed by of short duration deep oscillation mode
The discharge condition in kind twin target high-power impulse magnetron sputtering target source (5) eliminates sparking and ion resorption caused by charge accumulated
Influence of the equal non stationary discharges factor to film preparation is also beneficial to improve the deposition rate of film；Wherein deep oscillating impulse is inclined
Pressure can work to start and open in twin target high-power impulse magnetron sputtering power supply (4), advantageously reduce sparking plasma
The adverse effect of electric discharge can also be opened in centre, be conducive to improve plasma density, adjusted the stress of film deposition,
It can be opened in ending phase, be conducive to going on smoothly for next stage discharge, the amplitude of deep oscillation pulse voltage can be with
It is adjusted to different or phasic Chang amplitude, deep oscillating impulse can also occur in the negative pulse stage, it can also be just
There is deep oscillating impulse in stage pulse, then with the period is the cooperation that grid bias power supply (1) exports pulse, grid bias power supply impulse waveform with
The matching of twin target high-power impulse magnetron sputtering impulse waveform integral multiple, out of phase and different pulse widths, carries out film
Deposition；
Grid bias power supply (1) output voltage and twin target high-power impulse magnetron sputtering are controlled by synchronous waveform coalignment (8)
Power supply (4) output voltage makes -1000 μ s of μ s~1000 of phase difference of the two, guarantees matrix to the effective of metallic plasma
Attract the adjusting with ion energy, carries out compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the preparation of the high-quality thin-film of nanometer multilayer or gradient-structure；
It opens movable coil installation's power source (10), adjusts movable coil device (9) by movable coil installation's power source (10), adjust
The input current of movable coil device (9) is controlled using the magnetic field that movable coil device (9) generate from multi-stage magnetic field device (12)
The transmission path of the arc-plasma come out with liner bias conical pipe and ladder pipe combination unit (14) transmission, utilizes activity
The cooperation of shape and the magnetic field magnetic line layout, direction of coil device, movable coil can use 90 degree of classical flexure types,
Can using straight line and bending, be bent and the Straight Combination (magnetic line of force of the straight line portion and magnetic line of force of bending part is tangent, phase
Hand over), straight line and Straight Combination (magnetic line of force intersection of two sections of straight line portions), straight line, circular arc and straight line combination (three sections of intersections and
Tangent combination) and circular arc, straight line and circular arc the typical loop construction combination such as combination (tangent between three and intersection),
Circular arc and straight line portion therein are determined according to the needs of spatial position and transmission path, realize point with bulky grain defect
From, so that it is reached matrix surface with higher efficiency of transmission, it is heavy caused by overcoming due to vacuum chamber space and the design of target source layout
Film caused by the limitation of product position or base shape limit deposits problem of non-uniform, carries out the fast deposition of film, multistage magnetic
Field device (12) is filtered elimination to the bulky grain defect in arc-plasma, guarantees the uniformity of target ablation, improves
The utilization efficiency of target overcomes high-power impulse magnetron sputtering technology discharge instability and ion resorption problem, makes compound etc.
Gas ions pass through movable coil device (9) with higher efficiency of transmission, while realizing the adjusting to magnetic direction and magnetic field strength,
Pilot arc plasma and twin target high-power impulse magnetron sputtering plasma reach any position in vacuum chamber (13)
Or on sample stage (12) arbitrary shape matrix surface, coil turn, coil-span, shape and the biography of movable coil device (9)
The adjustings such as defeated path control compound plasma, reduce loss of the compound plasma in vacuum chamber (13), remove electric arc
Bulky grain defect in plasma, carries out the fast deposition of film；The output resistance of standardsizing rheostat device (11) is realized and is lived
Positive bias variation on moving-wire coil apparatus (9), the electric field that positive bias generates may be implemented to electronics in arc-plasma and residual
The attraction of remaining bulky grain, and then the ion populations for increasing the arc-plasma exported in movable coil device (9) increase, and are promoted
Efficiency of transmission of the arc-plasma in movable coil device (9) eliminates remaining bulky grain defect；Movable coil device
(9) low-resistance copper tube, the number of turns, coil channel of diameter, thickness and the length of copper pipe according to movable coil device (9) are selected
Diameter, coil shape, coil turn spacing, vacuum chamber size, the transmission path of compound plasma and transmission range determine；It is living
The positive and negative anodes of moving winding installation's power source (10) provide conjunction to movable coil device (9) according to magnetic field strength, direction and cooling system
The input range of suitable electric current, electric current is 0 ~ 2000A, guarantees that the stability of entire vacuum system and movable coil device (9) are defeated
Suitable magnetic field out, the path transmission for setting compound plasma according to movable coil device (9) guarantee to remaining big
Matrix surface is reached with high efficiency of transmission while grain is removed, avoids compound plasma loss in vacuum chamber (13), it is real
The fast deposition of existing film；
Arc ion plating target source (3), twin target high-power impulse magnetron sputtering target source (5), multi-stage magnetic field device (12) and activity
Coil device (9) uses direct water-cooling mode, avoids the temperature in the course of work from increasing problem, has external water cooling unit system to provide
Enough cooling water flows and cooling temperature, to guarantee the normal operation of entire vacuum system.
2. a kind of combination field according to claim 1 and liner conical pipe and the compound vacuum coating method of ladder pipe,
It is characterized in that, institute's use device further includes that grid bias power supply kymographion (6) show the pulse voltage that grid bias power supply (1) issues
And current waveform, twin target high-power impulse magnetron sputtering power supply wave shape oscillograph (7) show twin target high power pulse magnetic control
Shielding power supply (4) output impulse waveform, by synchronous waveform coalignment (8) control grid bias power supply kymographion (6) and
Twin target high-power impulse magnetron sputtering power supply (4), makes grid bias power supply impulse waveform and twin target high-power impulse magnetron sputtering
Impulse waveform adjusts the output waveform of grid bias power supply (1) according to integral multiple, the matching of out of phase and different pulse widths, right
The plated film ion transmitted from a kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe carries out
Effectively attract, to multi-stage magnetic field device (12), liner bias conical pipe and ladder pipe combination unit (14) and movable coil device
(9) transmission comes out the bulky grain in arc-plasma and carries out electric field inhibition in, in matrix surface deposition film and control deposition
The ratio of target elements in the film realizes the adjusting of plasma energy and is possible to remaining bulky grain defect progress electricity
Field, which is repelled, removes.
3. a kind of combination field according to claim 1 and liner conical pipe and the compound vacuum coating method of ladder pipe,
It is characterized in that, the device covers combination using single set or more, and combines the waveform control of synchronous waveform coalignment (8), lives
The multiple types of moving-wire coil apparatus (9), multi-stage magnetic field device (12) and liner bias conical pipe and ladder pipe combination unit (14)
Optimized Matching, multi-stage magnetic field, liner bias conical pipe and the ladder pipe combination unit and movable coil of different wave are realized in combination
The transmission path in magnetic field guides, and the compound of pure metal film, different element ratios is prepared in the indoor any position of vacuum
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure.
4. a kind of combination field according to claim 1 and liner conical pipe and the compound vacuum coating method of ladder pipe,
It is characterized in that, first carrying out the pulse of magnetron sputtering combination high voltage using twin target high-power impulse magnetron sputtering power supply (4)
Grid bias power supply carries out ion implantation and deposition, improves the binding force of film and matrix, then using single set or cover the device more and tie
It closes using the one or two kinds of of Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc
Above method combination, then apply Dc bias, pulsed bias or the compound biasing device of DC pulse on workpiece, realize two kinds or
The compound of person two or more depositional modes carries out film deposition, to prepare the compound of pure metal film, different element ratios
Ceramic membrane, function film and the film with nanometer multilayer or gradient-structure.
5. a kind of combination field according to claim 1 and liner conical pipe and the compound vacuum coating method of ladder pipe,
It is characterized in that, working gas selects argon gas or working gas to select one kind or more in nitrogen, acetylene, methane, silane or oxygen
The mixed gas of kind, to prepare pure metal film, the compound ceramic film of different element ratios, function film and there is nanometer
The film of multilayer or gradient-structure.
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| CN201711493293.1A CN109989042A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711493293.1A CN109989042A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe |
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| CN201711493293.1A Pending CN109989042A (en) | 2017-12-30 | 2017-12-30 | A kind of combination field and liner conical pipe and the compound vacuum coating method of ladder pipe |
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Cited By (1)
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| CN114032512A (en) * | 2021-11-13 | 2022-02-11 | 东莞市华升真空镀膜科技有限公司 | Multi-arc source device and vacuum coating equipment |
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