CN209468497U - The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating - Google Patents
The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating Download PDFInfo
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Abstract
The liner positive bias porous type retaining device of multi-stage magnetic field arc ion plating, belongs to technical field of material surface treatment, and the utility model is to solve the problems, such as that bulky grain is to the loss during the pollution of film and Plasma Transport in multi-stage magnetic field filter device.The device of the utility model includes: grid bias power supply, arc power, arc ion plating target source, multi-stage magnetic field device, multi-stage magnetic field power supply, liner positive bias porous type retaining device, positively biased voltage source, sample stage, grid bias power supply kymographion and vacuum chamber；Film deposition: attachment device, activation system, to the indoor vacuum degree of vacuum less than 10‑4When Pa, it is passed through working gas, open plated film power supply, it is adjusted simultaneously by energy of the grid bias power supply to arc-plasma, the bulky grain defect in arc-plasma is eliminated by liner positive bias porous type retaining device and multi-stage magnetic field device and improves arc-plasma in the efficiency of transmission of multi-stage magnetic field filter device, technological parameter is set, film preparation is carried out.
Description
Technical field
The present invention relates to the liner positive bias perforated baffle devices of multi-stage magnetic field arc ion plating, belong to material surface processing
Technical field.
Background technique
During arc ion plating prepares film, since arc spot current density is up to 2.5 ~ 5 × 1010A/m2, cause
There is the liquid metal melted at the arc spot position of target material surface, under the action of local plasma pressure in droplets
Splash comes out, and is attached to film surface or inlays formation " bulky grain " (Macroparticles) defect (Boxman in the film
R L, Goldsmith S. Macroparticle contamination in cathodic arc coatings:
Generation, transport and control [J] Surf Coat Tech, 1992,52 (1): 39-50.).
In arc-plasma, since the movement velocity of electronics is far longer than the movement velocity of ion, big is reached in the unit time
The electron number on grain surface is greater than number of ions, makes bulky grain that elecrtonegativity be presented.It is the thin of micron or sub-micron relative to thickness rank
Film, size is in 0.1-10 microns of bulky grain defect just as PM2.5 is to the quality and property the pollution of air quality, to film
There can be serious harm.With thin-film material and thin film technique apply it is increasingly extensive, the solution of bulky grain defect problem with
The no bottleneck further developed as arc ions electroplating method seriously constrains its answering in thin-film material of new generation preparation
With.
Currently, in order to solve arc ions electroplating method using low melting point pure metal or multicomponent alloy material be also easy to produce greatly
Grain defect problem, it is main at present that bulky grain is filtered out using the method for Magnetic filter, as Chinese patent is used for material surface modifying
Plasma immersion and ion implantation device (publication number: CN1150180, publication date: on May 21st, 1997) in use 90 °
Magnetic filter is filtered the bulky grain of pulsed cathode arc, American scholar Anders et al. (Anders S, Anders A,
Dickinson M R, MacGill R A, Brown I G. S-shaped magnetic macroparticle filter
for cathodic arc deposition [J]. IEEE Trans Plasma Sci, 1997, 25(4): 670-
674.) and the Zhang Yujuan of He'nan University etc. (the filtered cathode arc plasma such as Zhang Yujuan, Wu Zhiguo, Zhang Weiwei prepares TiAlN thin film
Middle sedimentary condition to film texture influence China YouSe Acta Metallurgica Sinica 2004,14 (8): 1264-1268.) in article
Middle " S " magnetic filter that made is filtered the bulky grain of cathode arc, and there are also American scholar Anders et al. (Anders
A, MacGill R A. Twist filter for the removal of macroparticles from cathodic
Arc plasmas [J] Surf Coat Tech, 2000,133-134:96-100.) the Twist filter that proposes
Magnetic filter, although these methods have certain effect, the efficiency of transmission damage of plasma in terms of filtering and eliminating bulky grain
It loses seriously, substantially reduces ion current density.Based on that can filter on the basis of bulky grain can guarantee efficiency again, Chinese patent is true
The side of straight tube filtering is proposed in empty cathode arc straight filter (publication number: CN1632905, publication date: on June 29th, 2005)
Method, but which in turn reduces filter effects.In short, relevant researcher is by comparing various Magnetic filter method (Anders A.
Approaches to rid cathodic arc plasmas of macro- and nanoparticles: a review
[J] Surf Coat Tech, 1999,120-121319-330. and Takikawa H, Tanoue H. Review of
cathodic arc deposition for preparing droplet-free thin films [J]. IEEE Trans
Plasma Sci, 2007,35 (4): 992-999.) find arc ion plating plasma by keeping after magnetic filter
High efficiency of transmission and elimination bulky grain is very difficult to take into account, and drastically influences application of the technology in high-quality thin-film deposition.
In addition the electric field suppressing method of bias is used on matrix, when applying back bias voltage on matrix, electric field will be to electronegative big
Grain generates repulsive interaction, and then reduces the generation of film surface bulky grain defect.German scholar Olbrich et al. (Olbrich
W, Fessmann J, Kampschulte G, Ebberink J. Improved control of TiN coating
properties using cathodic arc evaporation with a pulsed bias [J]. Surf Coat
Tech, 1991,49 (1-3): 258-262. and Fessmann J, Olbrich W, Kampschulte G, Ebberink
J. Cathodic arc deposition of TiN and Zr(C, N) at low substrate temperature
Using a pulsed bias voltage [J] Mat Sci Eng A, 1991,140:830-837.) use pulse
Bias replaces traditional Dc bias, forms a kind of new physical gas phase deposition technology --- pulsed bias arc ion plating
Technology not only greatly reduces the number of film surface bulky grain, also overcomes substrate temperature mistake caused by Traditional DC bias
High, the problems such as stress in thin films is larger.Woods Guoqiang of Dalian University of Technology et al. be (Lin Guoqiang pulsed bias arc ion plating
Process ba- sis studies [D] Dalian University of Technology, and 2008. and Huang Meidong, Lin Guoqiang, Dong Chuan, Sun Chao, it is inclined to hear immediately
Press Influencing Mechanism [J] Acta Metallurgica Sinica to arc ion plating film surface appearance, 2003,39 (5): 510-515.) needle
The mechanism of bulky grain defect reduction is caused to conduct in-depth analysis pulsed bias, by pulsed bias amplitude, frequency and arteries and veins
The adjustment of width and other processes parameter is rushed, the sheaths kinetic characteristic of arc-plasma can be improved, big for reducing film surface
Grain defect counts, improve the quality of film, are widely used in actual production, but cannot still completely eliminate bulky grain and lack
It falls into.Domestic scholars (Wei Yongqiang, Zong Xiaoya, Jiang Zhiqiang, Wen Zhenhua, Chen Liangji multi-stage magnetic field straight tube Magnetic filter and pulse
The compound arc ions electroplating method of bias, publication number: CN103276362A, publication date: on September 4th, 2013) propose it is more
Grade magnetic field straight tube Magnetic filter and the compound arc ions electroplating method of pulsed bias, big is eliminated by multi-stage magnetic field filter device
Grain defect and the efficiency of transmission for promoting plasma, but the pollution problem of inside pipe wall and the loss of inside pipe wall plasma do not have
It is well solved, later period correlation scholar (Wei Yongqiang, Zong Xiaoya, Hou Junxing, Liu Yuan, Liu Xueshen, Jiang Zhiqiang,
The multi-stage magnetic field arc ions electroplating method of pallid light liner positive bias straight tube is accorded with, publication number: CN105925940A, publication date:
On September 7th, 2016) the multi-stage magnetic field arc ions electroplating method of liner positive bias straight tube is proposed to solve the pollution to inside pipe wall
Problem.There are also scholar using dual-layered baffle plate device (Zhao Y, Lin G, Xiao J, Lang W, Dong C, Gong J,
Sun C. Synthesis of titanium nitride thin films deposited by a new shielded
Arc ion plating [J] Appl Surf Sci, 2011,257 (13): 5694-5697.), have studied baffle spacing
To the affecting laws of film surface appearance, bulky grain elimination effect and deposition rate.There are also scholar (Zhang Tao, Hou Junda, Liu Zhi
State, the cathodic arc plasma source and its film preparation [J] China Surface Engineering of Zhang Yicong Magnetic filter, 2002,02):
11-15+20-12.) use for reference method (Bilek M M M, Yin Y, McKenzie D R, the Milne W I A of Bilek plate
M W I. Ion transport mechanisms in a filtered cathodic vacuum arc (FCVA)
system [C]. Proceedings of the Discharges and Electrical Insulation in
Vacuum, 1996 Proceedings ISDEIV, XVIIth International Symposium on, 1996:
962-966 vol.2), apply positive bias on the bend pipe of 90 degree of bend pipe magnetic filters to improve the transmission effect of plasma
Rate.
Summary of the invention
The invention aims to the pure metal or multicomponent alloy of low melting point are used for solution conventional arc ion electroplating method
Material and nonmetallic materials (such as graphite) are as target is also easy to produce bulky grain defect, flexure type Magnetic filter technology causes electric arc etc.
It gas ions the problems such as transmission efficiency is low, is shielded in conjunction with the mechanical stop of multi-stage magnetic field filter method and porous type baffle own form
And the compound action that positively biased piezoelectric field attracts eliminates the bulky grain defect that contains in arc-plasma, while guarantee electric arc etc. from
Daughter, by porous type baffle and multi-stage magnetic field filter device, makes workpiece surface apply back bias voltage with higher efficiency of transmission
Situation can be continuous, fine and close prepare high-quality thin-film, while realizing to constituent content addition control in film, reducing and use alloy
The production cost of target, the deposition efficiency for improving film and reduction bulky grain defect are grown to film and the adverse effect of performance, mentions
The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating is gone out.
Device used in the present invention includes grid bias power supply 1, arc power 2, arc ion plating target source 3, multi-stage magnetic field device
4, multi-stage magnetic field power supply 5, liner positive bias porous type retaining device 6, positively biased voltage source 7, sample stage 8, grid bias power supply waveform show
Wave device 9 and vacuum chamber 10；
In the device:
Substrate work-piece to be processed is placed on the sample stage 8 in vacuum chamber 10, liner positive bias porous type retaining device 6 and true
It insulate between empty room 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, arc ion plating
Target source 3 is mounted on vacuum chamber 10, connects the cathode output end of arc power 2, and the magnetic fields at different levels of multi-stage magnetic field device 4 connect multi-stage magnetic field
Each output end of power supply 5, positive and negative anodes connection can be determined according to output magnetic direction, liner positive bias porous type baffle
Device 6 connects the cathode output end of positively biased voltage source 7, opens external water-cooling circulating system；
Film deposition: it is vacuumized in vacuum chamber 10, to the vacuum degree in vacuum chamber 10 less than 10-4When Pa, it is passed through work gas
Body to 0.01Pa~10Pa, grid bias power supply 1 and grid bias power supply kymographion 9 is opened, the bias amplitude that grid bias power supply 1 exports,
Pulse frequency and pulse width modulation, the peak voltage that grid bias power supply 1 exports pulse is 0~1.2kV, pulse frequency 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source 3, and adjusting needs
The technological parameter wanted, the current value that arc power 2 exports are 10 ~ 300A, adjust multi-stage magnetic field device 4 by multi-stage magnetic field power supply 5,
It keeps arc-plasma to stablize generation in arc ion plating target source 3 and be filtered elimination to bulky grain defect, makes electric arc etc.
Gas ions reach matrix surface by multi-stage magnetic field device 4 with higher efficiency of transmission, carry out the fast deposition of film, electric arc from
Son plates target source 3 and multi-stage magnetic field device 4 and avoids the temperature in the course of work from increasing problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias porous type retaining device 6 keeps direct current positive bias, and output voltage adjusts,
Liner positive bias porous type retaining device 6 attracts bulky grain, repels to depositing ions, reduces plasma in pipe
Loss in interior transmission process improves the efficiency of transmission of plasma and the deposition velocity of film；Liner positive bias porous type gear
Panel assembly 6 can cooperate type, the spacing of size and baffle in hole on the design baffle of multi-stage magnetic field device 4, and baffle passes through bolt
It connects and carries out position using nut and fix, convenient for dismantling assembling and clear up pollutant；Liner positive bias porous type retaining device 6
Activity insulation is assembled together between multi-stage magnetic field device 4, and liner positive bias porous type retaining device 6 can be polluted with apparent surface
Degree dismantles cleaning and installation in time, avoids the inside pipe wall pollution of multi-stage magnetic field device 4 under linerless board status and is difficult to clear up
The problem of, the perforated baffle spacing of liner positive bias porous type retaining device 6 and the length of magnetic field phases at different levels of multi-stage magnetic field device 4
Cooperation, the outer diameter of 6 perforated baffle of liner positive bias porous type retaining device are slightly less than the internal diameter of multi-stage magnetic field device 4；Liner is just
Pore size, type in 6 perforated baffle of bias porous type retaining device are selected according to different targets and technological parameter, are led to
The structure combination of the pore size, Change of types and baffle at different levels in 6 perforated baffle of liner positive bias porous type retaining device is crossed,
The mechanical stop shielding to bulky grain may be implemented；The material of liner positive bias porous type retaining device 6 may be selected nonmagnetic, resistance to
304 stainless steel materials of cleaning, can select suitable thickness, the size in aperture, the structure of type and baffle at different levels as needed
Layout is processed according to actual design parameter；The voltage parameter of positively biased voltage source 7 be 0 ~+200V, DC voltage power supply,
Continual and steady attraction can be generated to bulky grain defect during the deposition process, greatly reduces bulky grain and passes through multi-stage magnetic field device
4 probability.
According to the needs of film preparation, the change that relevant technological parameter carries out pure metal film, different element ratios is adjusted
It closes object ceramic membrane, function film and is prepared with the high-quality thin-film of nanometer multilayer or gradient-structure.
Advantages of the present invention: a. liner positive bias porous type retaining device by apply positive bias can to bulky grain into
Row effectively attracts, and repels to depositing ions, reduces loss of the plasma in pipe in transmission process, further increases electricity
The efficiency of transmission of arc plasma and the deposition velocity of film；B. multi-stage magnetic field filter device can guarantee electricity by the magnetic line of force
The high efficiency of transmission of arc plasma changes the motion path of bulky grain defect and lacks to eliminate the bulky grain in arc-plasma
It falls into；C. liner positive bias porous type retaining device can realize mechanical stop screen effect by own form, limit bulky grain
The motion path of defect eliminates the bulky grain defect in arc-plasma；D. it is adjusted, is wrapped by pulsed bias parameter
Amplitude, pulse width and frequency is included to realize to the adjusting of arc-plasma energy and disappear to remaining bulky grain defect
It removes；E. the microstructure and properties of prepared film can be adjusted by pulsed bias parameter, utilize the width of pulsed bias
Value, pulse width and frequency realize the pinning effect that energetic ion grows film, improve the texture of film growth and answer
Power state improves bond strength；F. prepared film avoids bulky grain defect, and film crystal tissue is finer and close, can be with
Further increase the mechanical property of film.
The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating can be splashed in conjunction with using Traditional DC magnetic control
Penetrate, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and Dc bias, pulsed bias or DC pulse it is compound partially
Pressure device carries out film deposition, to prepare compound ceramic film, function film and the tool of pure metal film, different element ratios
There is the high-quality thin-film of nanometer multilayer or gradient-structure.
Detailed description of the invention
Fig. 1 is the scheme of erection of the liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating of the present invention；Fig. 2 is
The structure diagram of liner positive bias porous type retaining device；Fig. 3 is the perforated baffle schematic diagram of different-diameter circular hole；Fig. 4 is different
The perforated baffle schematic diagram of size rectangular opening.
Specific embodiment
Specific embodiment 1: illustrating that present embodiment, present embodiment are multistage below with reference to Fig. 1, Fig. 2, Fig. 3 and Fig. 4
The liner positive bias perforated baffle device institute use device of magnetic field arc ion plating include grid bias power supply 1, arc power 2, electric arc from
Son plating target source 3, multi-stage magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias porous type retaining device 6, positively biased voltage source 7,
Sample stage 8, grid bias power supply kymographion 9 and vacuum chamber 10；
In the device:
Substrate work-piece to be processed is placed on the sample stage 8 in vacuum chamber 10, liner positive bias porous type retaining device 6 and true
It insulate between empty room 10 and multi-stage magnetic field device 4, workpiece and sample stage 8 connect the cathode output end of grid bias power supply 1, arc ion plating
Target source 3 is mounted on vacuum chamber 10, connects the cathode output end of arc power 2, and the magnetic fields at different levels of multi-stage magnetic field device 4 connect multi-stage magnetic field
Each output end of power supply 5, positive and negative anodes connection can be determined according to output magnetic direction, liner positive bias porous type baffle
Device 6 connects the cathode output end of positively biased voltage source 7, opens external water-cooling circulating system；
Film deposition: it is vacuumized in vacuum chamber 10, to the vacuum degree in vacuum chamber 10 less than 10-4When Pa, it is passed through work gas
Body opens grid bias power supply 1 and grid bias power supply kymographion 9 to 0.01Pa~10Pa, and adjusts the bias of the output of grid bias power supply 1
Amplitude, pulse frequency and pulse width, the peak voltage that grid bias power supply 1 exports pulse is 0~1.2kV, pulse frequency 0Hz
~80kHz, pulse width 1 ~ 90%；
Arc power 2 is opened, and is cleaned by the spots moving of electric arc to the surface in arc ion plating target source 3, and adjusting needs
The technological parameter wanted, the current value that arc power 2 exports are 10 ~ 300A, adjust multi-stage magnetic field device 4 by multi-stage magnetic field power supply 5,
Keep arc-plasma to stablize in arc ion plating target source 3 to generate and be filtered elimination to bulky grain defect, electric arc etc. from
Daughter reaches matrix surface by multi-stage magnetic field device 4 with higher efficiency of transmission, carries out the fast deposition of film, arc ions
It plates target source 3 and multi-stage magnetic field device 4 and avoids the temperature in the course of work from increasing problem by water-cooling pattern；
Positively biased voltage source 7 is opened, and liner positive bias porous type retaining device 6 keeps direct current positive bias, adjusts output voltage,
Attract liner positive bias porous type retaining device 6 to bulky grain, depositing ions are repelled, reduces plasma and exist
Loss in managing in transmission process, improves the efficiency of transmission of plasma and the deposition velocity of film；Liner positive bias porous type
Retaining device 6 can cooperate type, the spacing of size and baffle in hole on the design baffle of multi-stage magnetic field device 4, and baffle passes through spiral shell
It tethers to connect and carry out position using nut and fix, convenient for dismantling assembling and cleaning pollutant；Liner positive bias porous type baffle dress
It sets activity insulation between 6 and multi-stage magnetic field device 4 to be assembled together, liner positive bias porous type retaining device 6 can be with apparent surface
Pollution level dismantles cleaning and installation in time, avoids the inside pipe wall pollution of multi-stage magnetic field device 4 under linerless board status and is difficult to
The problem of cleaning, the perforated baffle spacing of liner positive bias porous type retaining device 6 and the magnetic fields at different levels of multi-stage magnetic field device 4 are long
Degree matches, and the outer diameter of 6 perforated baffle of liner positive bias porous type retaining device is slightly less than the internal diameter of multi-stage magnetic field device 4；It is interior
Pore size, type in lining 6 perforated baffle of positive bias porous type retaining device are selected according to different targets and technological parameter
It selects, passes through the structure of pore size, Change of types and baffle at different levels in 6 perforated baffle of liner positive bias porous type retaining device
The mechanical stop shielding to bulky grain may be implemented in combination；The material of liner positive bias porous type retaining device 6 may be selected without magnetic
Property, resistance to cleaning 304 stainless steel materials, suitable thickness, the size in aperture, type and baffle at different levels can be selected as needed
Topology layout is processed according to actual design parameter；The voltage parameter of positively biased voltage source 7 is 0 ~+200V, is direct current
Pressure, can generate continual and steady attraction to bulky grain defect during the deposition process, greatly reduce bulky grain and pass through multi-stage magnetic field
The probability of device 4.
The output waveform of grid bias power supply 1 is direct current, pulse, DC pulse is compound or multiple-pulse is compound.
Output direct current, pulse, the DC pulse of arc power 2 are compound or multiple-pulse is compound.
Arc ion plating target source 3 can be used single using high-melting-point or the pure metal or multicomponent alloy material of low melting point
Target, multiple targets or composition target carry out pure metal film, the compound ceramic film of different element ratio, function film, polynary more
Layer, superlattices, the high-quality thin-film with nanometer multilayer or gradient-structure.
It is one or more in nitrogen, acetylene, methane, silane or oxygen that working gas selects argon gas or working gas to select
Mixed gas, to prepare pure metal film, the compound ceramic film of different element ratio, function film, multi-component multi-layer, super
Lattice, the film with nanometer multilayer or gradient-structure.
The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating, can utilize in porous type retaining device
The positive bias of application attracts bulky grain, effectively avoids bulky grain problem caused by low melting material；Simultaneously to deposition
Ion is repelled, and loss of the plasma between porous type baffle in transmission process is reduced, and improves the transmission effect of plasma
The deposition velocity of rate and film；Liner positive bias porous type retaining device passes through the size in aperture, Change of types and baffle at different levels
Between structure combination, may be implemented that the shielding of the mechanical stop of bulky grain defect is reduced bulky grain and passes through porous type retaining device
Reach the probability on deposited samples surface；Fast quick-detach installation may be implemented in liner positive bias porous type retaining device, avoids nothing
The inside pipe wall of multi-stage magnetic field device pollutes the problem of cleaning under liner plate state；By adjusting back bias voltage parameter applied on workpiece,
Be conducive to improve the section Potential Distributing of plasma between target base, sufficiently attract compound plasma to workpiece motion s, realize
The fast deposition of film；Also stablize metallic plasma lasting, that ionization level is high using the generation of arc ion plating (aip) simultaneously,
Be conducive to high ionization level ion in the chemosynthesis reaction of workpiece surface, prepare different element ratios compound ceramic film,
Function film, multi-component multi-layer, superlattices and film or pure metal film with gradient-structure.
Specific embodiment 2: present embodiment and embodiment one the difference is that, which can also be achieved separately
Outer function: Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and pulsed cathode arc and direct current can be combined
Bias, pulsed bias or the compound biasing device of DC pulse carry out film deposition, to prepare pure metal film, different element ratios
Compound ceramic film, function film and the high-quality thin-film with nanometer multilayer or gradient-structure.
Specific embodiment 3: present embodiment and embodiment two the difference is that, multi-stage magnetic field arc ions
The liner positive bias perforated baffle device of plating connects, and arc power 2 is opened, and multi-stage magnetic field power supply 5, which is opened, adjusts multi-stage magnetic field device
4, positively biased voltage source 7 is opened, and liner positive bias porous type retaining device 6 keeps direct current positive bias, and grid bias power supply 1 is opened, technique
Parameter adjustment, carries out film deposition, prepares the multilayer films with different stress, microstructure and element ratio,
Other are identical as embodiment two.
Specific embodiment 4: present embodiment and embodiment one the difference is that, multi-stage magnetic field arc ions
The liner positive bias perforated baffle device of plating connects, and arc power 2 is opened, and multi-stage magnetic field power supply 5, which is opened, adjusts multi-stage magnetic field device
4, positively biased voltage source 7 is opened, and liner positive bias porous type retaining device 6 keeps direct current positive bias, and grid bias power supply 1 is opened, technique
Parameter adjustment carries out film deposition, and combines Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc ion plating and arteries and veins
It rushes cathode arc and Dc bias, pulsed bias or the compound biasing device of DC pulse carries out film deposition, preparation is answered with difference
The multilayer films of power state, microstructure and element ratio, other are identical as embodiment two.
2 sets or above arc ion plating target source 3, multi-stage magnetic field device 4 and liner positive bias porous type can be used
The liner positive bias perforated baffle device of the combined multi-stage magnetic field arc ion plating of retaining device 6 is carried out with various pure metal elements
With multicomponent alloy material be target film deposit, and combine Traditional DC magnetron sputtering, pulsed magnetron sputtering, conventional arc from
Son plating and pulsed cathode arc and Dc bias, pulsed bias or the compound biasing device of DC pulse carry out film deposition, preparation tool
There are the multilayer films of different stress, microstructure and element ratio.
Claims (2)
1. the liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating, which is characterized in that the device includes bias plasma
Source (1), arc power (2), arc ion plating target source (3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), liner positive bias
Porous type retaining device (6), positively biased voltage source (7), sample stage (8), grid bias power supply kymographion (9) and vacuum chamber (10),
It insulate between liner positive bias porous type retaining device (6) and vacuum chamber (10) and multi-stage magnetic field device (4)；Matrix work to be processed
Part is placed on the sample stage (8) in vacuum chamber (10), and workpiece and sample stage (8) connect the cathode output end of grid bias power supply (1), electric arc
Ion plating target source (3) is mounted on vacuum chamber (10), connects the cathode output end of arc power (2), multi-stage magnetic field device (4) it is at different levels
Magnetic field connects each output end of multi-stage magnetic field power supply (5), and liner positive bias porous type retaining device (6) connects positively biased voltage source (7)
Cathode output end, arc ion plating target source (3) and multi-stage magnetic field device (4) avoid the temperature in the course of work by water-cooling pattern
Spend raising problem；Activity insulation is assemblied in one between liner positive bias porous type retaining device (6) and multi-stage magnetic field device (4)
It rises, the perforated baffle spacing of liner positive bias porous type retaining device (6) and the length of magnetic field phases at different levels of multi-stage magnetic field device (4)
Cooperation, the outer diameter of liner positive bias porous type retaining device (6) perforated baffle are less than the internal diameter of multi-stage magnetic field device (4)；Liner
Positive bias porous type retaining device (6) cooperates on multi-stage magnetic field device (4) design baffle between the type, size and baffle in hole
Away from baffle is bolted and carries out position using nut and fixes, convenient for dismantling assembling and cleaning pollutant；Just by liner
The structure of pore size, Change of types and baffle at different levels in bias porous type retaining device (6) perforated baffle combines, realization pair
The mechanical stop of bulky grain shields；The material of liner positive bias porous type retaining device (6) selects the 304 of nonmagnetic, resistance to cleaning
Stainless steel material, institute's use device further include grid bias power supply kymographion (9), the pulse electricity that display grid bias power supply (1) issues
Pressure and current waveform, grid bias power supply (1) output pulse is pulse, DC pulse is compound or multiple-pulse is compound.
2. the liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating according to claim 1, feature exist
In working gas selects argon gas or working gas to select mixing one or more in nitrogen, acetylene, methane, silane or oxygen
Gas, to prepare the compound ceramic film of pure metal film, different element ratio and with nanometer multilayer or gradient-structure
Film.
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| CN201720092264.3U CN209468497U (en) | 2017-01-22 | 2017-01-22 | The liner positive bias perforated baffle device of multi-stage magnetic field arc ion plating |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022001342A1 (en) * | 2020-07-02 | 2022-01-06 | 安徽纯源镀膜科技有限公司 | Transmission channel apparatus for plasma transmission, and deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022001342A1 (en) * | 2020-07-02 | 2022-01-06 | 安徽纯源镀膜科技有限公司 | Transmission channel apparatus for plasma transmission, and deposition device |
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Effective date of registration: 20200618 Address after: 450015 Henan Province, Zhengzhou District, No. 27 University Road, No. 2 Patentee after: ZHENGZHOU INSTITUTE OF AERONAUTICAL INDUSTRY MANAGEMENT Address before: 450015, building 4, unit 2, building 26, Zheng Hang family hospital, 2 Middle School Road, 27 District, Henan, Zhengzhou Patentee before: Wei Yongqiang |
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